CN114545537A - Metamaterial near-infrared broadband absorber and preparation method thereof - Google Patents
Metamaterial near-infrared broadband absorber and preparation method thereof Download PDFInfo
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Abstract
The invention relates to a metamaterial near-infrared broadband absorber and a preparation method thereof. The metamaterial near-infrared broadband absorber comprises a substrate, a metal bottom layer, a middle medium layer, a metal microstructure layer and a top medium layer, wherein the metal bottom layer, the middle medium layer, the metal microstructure layer and the top medium layer are sequentially covered above the substrate from bottom to top; the metal microstructure is relatively simple, large-area preparation can be realized, the manufacturing cost is low, and the method has an important reference value in the research of the fields of infrared stealth, infrared detection and the like.
Description
Technical Field
The invention relates to the technical field of infrared absorbers, in particular to a metamaterial near-infrared broadband absorber and a preparation method thereof.
Background
The metamaterial is a composite material which is artificially designed and manufactured and has a periodic structure, the metamaterial absorber is an important research branch in the field of the metamaterial, and the metamaterial absorber has important application in the fields of sensors, filters, infrared stealth, photoelectric detection, solar photovoltaic and the like. In 2008, Landy et al first proposed a perfect absorber of single frequency consisting of a metal split ring resonator and a metal wire in (Physical Review Letters, volume 100, page 207402), in which a perfect absorption of 99% was achieved around 11.5GHz by coupling of electromagnetic resonance generated by the resonant ring and the underlying metal layer with the incident electromagnetic wave. After that, according to the design concept of Landy, Tao et al (Physical Review B, volume 78, page 241103) again achieved near perfect absorption with an absorption rate of 99.9% at 1.6THz by changing the cell structure shape and optimizing the structure parameters. However, due to the limitation of the micro-nano processing technology, the wave bands of the absorber are all in the microwave and terahertz wave bands. In 2010, Cui et al designed and realized a near-infrared band narrow-band absorber (NANO leds, volume 10, page 2342-2348), which was of a classical MIM (metal-dielectric-metal) structure, with an upper layer of square lattice gold disk, an intermediate layer of magnesium fluoride film, a bottom layer of gold film, which prevents light from transmitting, and a reflection at a wavelength of 1.6 μm is almost zero, thus achieving nearly 99% of near-perfect absorption. Since then, there are many absorbers in the near infrared band based on the MIM structure of visible light, but most absorbers have absorption of unimodal or multimodal absorption, and it is difficult to achieve a wide range of continuous high absorption. To achieve a wide range of continuous high absorption, the most common practice today is to achieve resonant coupling of multiple frequency bands by integrating microstructures of multiple sizes in a unit cell based on an MIM structure, thereby achieving absorption of a wide band. However, with the microstructure morphology, the size design is more and more complex, the manufacturing cost of the absorber is also increased, and meanwhile, the nano-scale complex geometric structure preparation needs high-cost technologies such as nano-printing and photoetching, and the preparation efficiency is low.
In summary, how to achieve perfect absorption in a wider range of near infrared band in the absorber, and solve the current situation that the structural design of the broadband absorber is more and more complicated and the preparation cost is gradually increased, are still a difficult problem in the current scientific and technical fields. Therefore, the designed perfect optical absorber in the near infrared spectrum range, which has a simple structure, can be prepared in a large area and is cheap in process, has very important practical significance and application value for solving the problems of narrow absorber bandwidth, low absorption rate, high preparation cost and the like in the existing research.
Disclosure of Invention
Based on this, the present invention is directed to solve at least one of the problems of the prior art, and to provide a metamaterial near-infrared broadband absorber, which has the advantages of simple structure, low cost of process, and high absorption rate.
A metamaterial near-infrared broadband absorber comprises a substrate, and a metal bottom layer, a middle medium layer, a metal microstructure layer and a top medium layer which are sequentially covered above the substrate from bottom to top, wherein the metal microstructure layer is formed by arranging a plurality of metal microstructures according to a hexagonal lattice periodic array.
According to the metamaterial near-infrared broadband absorber provided by the embodiment of the invention, the metal micro-nano structures arranged in a periodic array are arranged, the metal bottom layer and the middle medium layer are combined to form a metal-medium-metal structure, local surface plasma resonance is formed on the surface of a metal pattern, magnetic resonance is formed between the metal pattern and the metal bottom layer and between the metal pattern and the middle medium layer, perfect absorption is realized in a wavelength range of 1000-3000 nm under the action of resonance coupling, the average absorption rate is up to more than 98%, higher absorption rate can be achieved in a wavelength range of 2000nm, and the movement of the absorption wavelength range can be realized by finely adjusting the structural parameters of the absorber.
In addition, the metamaterial near-infrared broadband absorber provided by the embodiment of the invention is also provided with a top dielectric layer on the metal microstructure layer, when incident electromagnetic waves enter the metal surface, free electrons in the metal can form specific arrangement under the influence of the incident electromagnetic waves, surface plasmon waves formed by the arrangement of the free electrons are quickly attenuated in the direction vertical to the interface and are transmitted along the interface, and the dielectric layer is added on the top layer, so that the energy carried by evanescent waves can be effectively limited in the structure body, and the reflection of the structure is reduced. In addition, the magnetic field localized at the top of the metal disk due to localized surface plasmon modes can also be effectively confined in the structure by the dielectric. Meanwhile, the top dielectric layer also reduces the reflection of the structure surface, so that the light transmittance is increased.
The metal microstructure of the metamaterial near-infrared absorber is relatively simple, large-area preparation can be realized, the manufacturing cost is low, and the metamaterial near-infrared absorber has an important reference value in research in the fields of infrared stealth, infrared detection and the like.
Further, the material of the substrate is selected from silicon or quartz; the middle dielectric layer and the top dielectric layer are made of one or more of silicon dioxide, magnesium fluoride and titanium dioxide.
Further, the material of the metal bottom layer is selected from one or more of chromium, silver, aluminum, gold, copper and iron, and the metal bottom layer is arranged to prevent the transmission of incident light; the material of the metal microstructure layer is selected from one or more of chromium, titanium and tungsten.
Further, the thickness of the metal bottom layer is not less than 100nm so as to ensure that the incident light cannot penetrate; the thickness range of the middle dielectric layer is 100-200 nm; the thickness range of the top dielectric layer is 100-300 nm, and the thickness range of the middle dielectric layer is preferably limited, so that the phenomenon that the high-loss dielectric cannot sufficiently absorb coupled electromagnetic wave energy due to the fact that the middle dielectric layer is too thin is avoided, and the absorption rate of the electromagnetic wave is further influenced.
Furthermore, the metal microstructures comprise a plurality of metal microstructure groups arranged in an array, each metal microstructure group comprises 1 central microstructure and 4 sub-microstructures symmetrically arranged outside the edge of the central microstructure, and the distance between the center of the central microstructure and the center of each sub-microstructure is 300-500 nm.
Furthermore, the central microstructure and the sub-microstructures are metal discs with the same radius, the radius range is 30-500 nm, and the thickness range is 5-20 nm. Whether the incident electromagnetic wave can resonate with the resonant cavity or not is greatly related to the size of the resonant cavity, and the matching effect of the resonant cavity and the incident electromagnetic wave can be fully improved and the absorption effect can be effectively improved by limiting the size of the metal disc.
In addition, the embodiment of the invention also provides a preparation method of the metamaterial near-infrared broadband absorber, which comprises the following specific operation steps:
1) uniformly depositing a metal bottom layer with consistent thickness on a substrate by a physical deposition method;
2) uniformly depositing a middle dielectric layer with consistent thickness on the metal bottom layer by a physical deposition method;
3) placing a micro-structure template above the middle medium layer, wherein the micro-structure template is of a plate-shaped structure and is provided with a plurality of through holes in a penetrating manner, the through holes are arrayed according to a preset mode, and the shapes and the sizes of the through holes are correspondingly matched with the metal micro-structures; uniformly depositing the micro-structure template on the middle medium layer from the upper part of the micro-structure template by a physical deposition method, and removing the micro-structure template to obtain a metal micro-structure layer with consistent thickness;
4) and uniformly depositing a top dielectric layer with consistent thickness on the metal microstructure layer by a physical deposition method.
The preparation method of the metamaterial near-infrared broadband absorber provided by the embodiment of the invention has the advantages that the preparation process is simple, the production cost is lower compared with the existing near-infrared broadband absorber by adopting a relatively cheap processing and production process, the area of a prepared sample is large, the preparation of the sample with a large area can be realized, the bandwidth of the prepared absorber is wider, and the high absorption rate can be maintained in a wider range.
Further, the physical deposition method comprises magnetron sputtering deposition, vacuum electron beam deposition and ion beam sputtering deposition.
Further, the microstructure template is prepared by a thermal nanoimprint technology.
The production costs of the physical deposition method and the thermal nanoimprint technology are both relatively low and facilitate large-area fabrication.
For a better understanding and practice, the invention is described in detail below with reference to the accompanying drawings.
Drawings
FIG. 1 is a schematic perspective view of a metamaterial near-infrared broadband absorber according to the present invention;
FIG. 2 is a schematic cross-sectional view of a metamaterial near-infrared broadband absorber according to the present invention;
FIG. 3 is a schematic perspective view of a metamaterial near-infrared broadband absorber of the present invention with a top dielectric layer removed;
FIG. 4 is a schematic top view of a single set of metal microstructures according to the present invention;
FIG. 5 is a light absorption diagram of a metamaterial near-infrared broadband absorber according to embodiment 1 of the present invention;
FIG. 6 is a light absorption diagram of a metamaterial near-infrared broadband absorber in embodiment 2 of the present invention;
FIG. 7 is a light absorption diagram of a metamaterial near-infrared broadband absorber according to embodiment 3 of the invention;
FIG. 8 is a light absorption diagram of a metamaterial near-infrared broadband absorber according to embodiment 4 of the present invention;
FIG. 9 is a diagram showing the light absorption of the metamaterial near-infrared broadband absorber described in example 5 of the present invention.
Detailed Description
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are used only for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention.
Referring to fig. 1-3, fig. 1 is a schematic perspective view of a metamaterial near-infrared broadband absorber, fig. 2 is a schematic cross-sectional view of the metamaterial near-infrared broadband absorber, and fig. 3 is a schematic perspective view of the metamaterial near-infrared broadband absorber after a top dielectric layer is removed. As shown in the figure, the embodiment of the invention provides a metamaterial near-infrared broadband absorber, which comprises a substrate 1, a metal bottom layer 2, a middle dielectric layer 3, a metal microstructure layer 4 and a top dielectric layer 5, which are fixedly connected in sequence.
The substrate 1 is located at the lowermost layer of the structure and serves as a base for the structure, the material being silicon or quartz, the thickness h1 of which is 5 mm.
A metal bottom layer 2 is deposited on the substrate 1; the metal bottom layer 2 plays a role in preventing incident light from transmitting, the material is selected from one or more of chromium, silver, aluminum, gold, copper and iron, and the thickness h2 is not less than 100nm so as to ensure that the incident light cannot transmit.
The middle dielectric layer 3 is deposited on the metal bottom layer 2, the material of the middle dielectric layer 3 is selected from one or more of silicon dioxide, magnesium fluoride and titanium dioxide, and the thickness range h3 is 100-200 nm.
The metal microstructure layer 4 is positioned above the middle medium layer 3, and the metal microstructure layer 4 is formed by a plurality of metal microstructures in periodic array arrangement; as an optional implementation manner, in the present embodiment, the metal microstructure layer 4 includes a plurality of metal microstructure groups arranged in an array, please refer to fig. 4, fig. 4 is a schematic top view of a single group of metal microstructure groups according to the present invention, as shown in the figure, each metal microstructure group includes 1 central microstructure 41 and 4 sub-microstructures 42 symmetrically disposed outside edges of the central microstructure 41, and a distance P between a center of the central microstructure 41 and a center of the sub-microstructures 42 is 300 to 500 nm; furthermore, the central microstructure 41 and the sub-microstructures 42 are metal discs with the same radius, the radius range R1 is 30-500 nm, and the thickness range h4 is 5-20 nm.
The top dielectric layer 5 is directly deposited on the metal microstructures 4 to fill the gaps among the metal microstructures, as shown in fig. 3, and the thickness range h5 is 300-500 nm.
In addition, the embodiment of the invention also provides a preparation method of the metamaterial near-infrared broadband absorber, which comprises the following specific operation steps:
1) uniformly depositing a metal bottom layer 2 with consistent thickness on a substrate 1 by a physical deposition method;
2) uniformly depositing a middle dielectric layer 3 with consistent thickness on the metal bottom layer 2 by a physical deposition method;
3) placing a micro-structure template above the middle medium layer 3, wherein the micro-structure template is of a plate-shaped structure and is provided with a plurality of through holes in a penetrating manner, the through holes are arrayed according to a preset mode, and the shapes and the sizes of the through holes are correspondingly matched with those of the metal micro-structures; uniformly depositing the metal microstructure template on the middle medium layer 3 from the upper part of the microstructure template by a physical deposition method, and removing the microstructure template to obtain a metal microstructure layer 4 with consistent thickness, namely as shown in fig. 3, wherein the metal microstructure layer 4 is a raised structure which is arrayed on the middle medium layer 3 according to a preset mode, and the height of the raised structure is the thickness h4 of the metal microstructure layer 4;
4) uniformly depositing on the metal microstructure layer 4 by a physical deposition method to form a top dielectric layer 5 with consistent thickness; since the deposition of the top dielectric layer 5 is uniform and can fill the voids in the metal microstructure during the deposition process, as shown in fig. 1 and 3, the top surface of the top dielectric layer 5 has a protrusion matching the shape of the metal microstructure after the filling process, and the height of the protrusion is equal to the thickness h4 of the metal microstructure layer 4.
The physical deposition method comprises magnetron sputtering deposition, vacuum electron beam deposition and ion beam sputtering deposition. The microstructure template is prepared by a thermal nanoimprint technology.
The production costs of the physical deposition method and the thermal nanoimprint technology are both relatively low and facilitate large-area fabrication.
The technical scheme is illustrated by a plurality of examples in the following.
Example 1
The embodiment 1 of the invention provides a metamaterial near-infrared broadband absorber, wherein: the substrate 1 is a silicon substrate, the thickness h1 is 5mm, the metal bottom layer 2 is made of metal chromium, the thickness h2 is set to be 100nm, the middle medium layer 3 is made of silicon dioxide, the thickness h3 is set to be 110nm, the metal disc material is made of metal chromium, the thickness h4 is 20nm, the disc period P is 300nm, the radius R1 is 130nm, the thickness h5 of the top medium layer is 270nm, and the material is silicon dioxide.
Example 2
Example 3
Example 4
Example 5
Embodiment 5 of the present invention provides a metamaterial near-infrared broadband absorber, wherein: the substrate 1 is a silicon substrate, the thickness h1 is 5mm, the metal bottom layer 2 is made of metal chromium, the thickness h2 is set to be 100nm, the middle medium layer 3 is made of silicon dioxide, the thickness h3 is set to be 110nm, the metal disc material is made of metal chromium, the thickness h4 is 20nm, the disc period P is 300nm, the radius R1 is 100nm, the thickness h5 of the top medium layer is 270nm, and the material is silicon dioxide.
The metamaterial near-infrared broadband absorbers described in examples 1-5 are prepared by depositing layer by adopting a magnetron sputtering coating technology.
The performance test of the metamaterial near-infrared broadband absorbers prepared in examples 1 to 5 was carried out: simulating the minimum unit cell of the optical device structure by a Finite Difference Time Domain (FDTD) method, setting corresponding boundary conditions for simulation, calculating a simulation result, and displaying the near infrared light absorption effect of the metamaterial infrared broadband absorber by the measured simulation spectrogram as shown in figures 5-9. Meanwhile, in a comparative test, an opaque metal material is used as a substrate, the transmittance T of the structure to light is measured to be 0, and the absorption A is 1-R-T according to a formula, so that the absorption is only related to the reflectivity.
Fig. 5 is a light absorption diagram of the metamaterial near-infrared broadband absorber in embodiment 1 of the present invention, and as shown in fig. 5, it can be found from a simulated spectrogram that the overall absorption rate from 1000nm to 3300nm is over 90%, the wavelength range reaches 2300nm, and the overall absorption rate from 1200nm to 3000nm almost reaches 99%, the wavelength range reaches 1800nm, and the highest absorption rate at 1700nm reaches 99.97%.
FIG. 6 is a light absorption diagram of a metamaterial near-infrared broadband absorber in example 2 of the invention, as shown in FIG. 6, the absorption rate is over 90% in the wavelength range of 650nm to 3180nm, the near-infrared band is perfectly covered, and the absorption rate is over 98% in 900nm and 1700nm to 2730 nm.
Fig. 7 is a light absorption diagram of the metamaterial near-infrared broadband absorber described in embodiment 3 of the present invention, which is used as a control group of example 1, and the metamaterial near-infrared broadband absorber described in embodiment 3 is not provided with the top dielectric layer. As can be seen by comparing fig. 5 and 7, the absorption bandwidth and absorption rate are significantly reduced after the top dielectric layer is removed, indicating that the top dielectric layer plays a crucial role in perfect broadband absorption. Incident electromagnetic waves are incident to the surface of the metal, free electrons in the metal form specific arrangement under the influence of the incident electromagnetic waves, surface plasmon waves formed by the arrangement of the free electrons are quickly attenuated in the direction perpendicular to the interface and are propagated along the interface, and the dielectric layer is added on the top layer, so that the energy carried by evanescent waves can be effectively limited in the structure body, the absorption of the energy of the evanescent waves generated by resonance is facilitated, and the reflection of the structure is reduced. In addition, the magnetic field localized at the top of the metal disk due to localized surface plasmon modes can also be effectively confined in the structure by the dielectric. Meanwhile, the top dielectric layer, such as the silicon dioxide film in this embodiment 3, also reduces the reflection of the structure surface and increases the transmittance of light, and according to the antireflection film of the quarter-wavelength method, the optical thickness of the film is theoretically one quarter of the wavelength of incident light in the medium, and by preferably limiting the thickness of the top dielectric layer, the antireflection effect of the film can be best.
Fig. 8 is a light absorption diagram of the metamaterial near-infrared broadband absorber described in example 4 of the present invention, which is used as a control group in example 1, and the thickness of the middle dielectric layer is changed in the metamaterial near-infrared broadband absorber described in example 4. As can be shown by comparing FIG. 5 with FIG. 8, the absorption rate of the metamaterial near-infrared broadband absorber described in example 4 is obviously reduced in the wavelength range from 650nm to 3180nm, the absorption rate at the highest point is less than 90%, and the bandwidth is also obviously narrowed. It follows that the high loss electrolyte does not sufficiently absorb the coupled electromagnetic energy as the middle dielectric layer becomes thinner. The thickness of the middle dielectric layer has a significant influence on the absorption effect, and a good absorption effect can only be achieved within the thickness range mentioned above.
FIG. 9 is a light absorption diagram of a metamaterial near-infrared broadband absorber described in example 5 of the present invention, and as a control group of example 1, the radius of a metal disc is changed in the metamaterial near-infrared broadband absorber described in example 4, and it can be seen by comparing FIG. 5 with FIG. 9 that the absorption rate is significantly changed, the absorption peak of the long wavelength band is significantly decreased, and only the absorption peak of the short wavelength band is left. Whether incident electromagnetic wave energy resonates with a resonant cavity is strongly related to the size of the resonant cavity. In order to produce the best absorption effect, the size of the resonant cavity, namely the metal structure can achieve the best matching effect through adjusting the radius of the disc, and further achieve the best absorption effect.
From the above, the metamaterial near-infrared broadband absorber provided by the embodiment of the invention forms a metal-medium-metal structure by arranging the metal micro-nano structures in the periodic array arrangement and combining the metal bottom layer and the middle medium layer, forms local surface plasma resonance on the surface of the metal pattern, forms magnetic resonance with the metal bottom layer and the middle medium layer at the same time, perfect absorption is realized in a wave band of 1000-3000 nm under the action of resonance coupling, the average absorption rate is up to more than 98 percent, and can reach higher absorptivity in the wavelength range of 2000nm, and can select proper structural materials by preferably designing the geometric structural parameters of the metamaterial absorber, the absorber structure can generate multiple strong electromagnetic resonance modes, and the movement of the absorption wave band is realized by fine tuning the parameters of the absorber structure.
In addition, the metamaterial near-infrared broadband absorber provided by the embodiment of the invention is also provided with a top dielectric layer on the metal microstructure layer, when incident electromagnetic waves enter the metal surface, free electrons in the metal can form specific arrangement under the influence of the incident electromagnetic waves, surface plasmon waves formed by the arrangement of the free electrons are quickly attenuated in the direction vertical to the interface and are transmitted along the interface, and the dielectric layer is added on the top layer, so that the energy carried by evanescent waves can be effectively limited in the structure body, and the reflection of the structure is reduced. In addition, the magnetic field localized at the top of the metal disk due to localized surface plasmon modes can also be effectively confined in the structure by the dielectric. Meanwhile, the top dielectric layer also reduces the reflection of the structure surface, so that the light transmittance is increased.
The metal microstructure of the metamaterial near-infrared absorber is relatively simple, large-area preparation can be realized, the manufacturing cost is low, and the metamaterial near-infrared absorber has an important reference value in research in the fields of infrared stealth, infrared detection and the like.
The preparation method of the metamaterial near-infrared broadband absorber provided by the embodiment of the invention has the advantages that the preparation process is simple, the production cost is lower compared with the existing near-infrared broadband absorber by adopting a relatively cheap processing and production process, the area of a prepared sample is large, the preparation of the sample with a large area can be realized, the bandwidth of the prepared absorber is wider, and the high absorption rate can be maintained in a wider range.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention.
Claims (9)
1. A metamaterial near-infrared broadband absorber is characterized in that: the metal microstructure layer is formed by periodically arranging a plurality of metal microstructures in an array mode.
2. The metamaterial near-infrared broadband absorber of claim 1, wherein: the material of the substrate is selected from silicon or quartz; the middle dielectric layer and the top dielectric layer are made of one or more of silicon dioxide, magnesium fluoride and titanium dioxide.
3. The metamaterial near-infrared broadband absorber of claim 1, wherein: the material of the metal bottom layer is selected from one or more of chromium, silver, aluminum, gold, copper and iron; the material of the metal microstructure layer is selected from one or more of chromium, titanium and tungsten.
4. The metamaterial near-infrared broadband absorber of claim 1, wherein: the thickness of the metal bottom layer is not less than 100 nm; the thickness range of the middle dielectric layer is 100-200 nm; the thickness range of the top dielectric layer is 100-300 nm.
5. The metamaterial near-infrared broadband absorber of claim 1, wherein: the metal microstructures comprise a plurality of metal microstructure groups arranged in an array, each metal microstructure group comprises 1 central microstructure and 4 sub-microstructures symmetrically arranged outside the edge of the central microstructure, and the distance between the center of the central microstructure and the center of each sub-microstructure is 300-500 nm.
6. The metamaterial near-infrared broadband absorber of claim 5, wherein: the central microstructure and the sub-microstructures are metal discs with the same radius, the radius range is 30-500 nm, and the thickness range is 5-20 nm.
7. A preparation method of the metamaterial near-infrared broadband absorber as claimed in any one of claims 1 to 6, which is characterized by comprising the following specific operation steps:
1) uniformly depositing a metal bottom layer with consistent thickness on a substrate by a physical deposition method;
2) uniformly depositing a middle dielectric layer with consistent thickness on the metal bottom layer by a physical deposition method;
3) placing a micro-structure template above the middle medium layer, wherein the micro-structure template is of a plate-shaped structure and is provided with a plurality of through holes in a penetrating manner, the through holes are arrayed according to a preset mode, and the shapes and the sizes of the through holes are correspondingly matched with the metal micro-structures; uniformly depositing the micro-structure template on the middle medium layer from the upper part of the micro-structure template by a physical deposition method, and removing the micro-structure template to obtain a metal micro-structure layer with consistent thickness;
4) and uniformly depositing a top dielectric layer with consistent thickness on the metal microstructure layer by a physical deposition method.
8. The preparation method of the metamaterial near-infrared broadband absorber as claimed in claim 7, wherein the method comprises the following steps: the physical deposition method comprises magnetron sputtering deposition, vacuum electron beam deposition and ion beam sputtering deposition.
9. The preparation method of the metamaterial near-infrared broadband absorber as claimed in claim 7, wherein the method comprises the following steps: the microstructure template is prepared by a thermal nanoimprint technology.
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| CN104181622A (en) * | 2014-07-07 | 2014-12-03 | 浙江大学 | Design method for large-bandwidth strong-absorption metamaterial near-infrared wave-absorbing material |
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| WO2019029207A1 (en) * | 2017-08-11 | 2019-02-14 | 中国科学院上海微系统与信息技术研究所 | Electromagnetic absorption metamateria |
| CN112698433A (en) * | 2020-12-28 | 2021-04-23 | 中国科学院微电子研究所 | Metamaterial infrared absorber and manufacturing method thereof |
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| CN104181622A (en) * | 2014-07-07 | 2014-12-03 | 浙江大学 | Design method for large-bandwidth strong-absorption metamaterial near-infrared wave-absorbing material |
| WO2019029207A1 (en) * | 2017-08-11 | 2019-02-14 | 中国科学院上海微系统与信息技术研究所 | Electromagnetic absorption metamateria |
| CN108520903A (en) * | 2018-05-10 | 2018-09-11 | 江西师范大学 | A kind of Visible-to-Near InfaRed region broadband perfection absorber and preparation method thereof |
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