CN114545537B - Metamaterial near-infrared broadband absorber and preparation method thereof - Google Patents
Metamaterial near-infrared broadband absorber and preparation method thereof Download PDFInfo
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- CN114545537B CN114545537B CN202210142662.7A CN202210142662A CN114545537B CN 114545537 B CN114545537 B CN 114545537B CN 202210142662 A CN202210142662 A CN 202210142662A CN 114545537 B CN114545537 B CN 114545537B
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- 239000006096 absorbing agent Substances 0.000 title claims abstract description 76
- 238000002360 preparation method Methods 0.000 title abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 128
- 239000002184 metal Substances 0.000 claims abstract description 128
- 239000000758 substrate Substances 0.000 claims abstract description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 32
- 238000000151 deposition Methods 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 19
- 235000012239 silicon dioxide Nutrition 0.000 claims description 18
- 238000005289 physical deposition Methods 0.000 claims description 17
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 15
- 229910052804 chromium Inorganic materials 0.000 claims description 15
- 239000011651 chromium Substances 0.000 claims description 15
- 239000000377 silicon dioxide Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 4
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 241000276425 Xiphophorus maculatus Species 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000000313 electron-beam-induced deposition Methods 0.000 claims description 3
- 238000001659 ion-beam spectroscopy Methods 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 abstract description 37
- 230000000694 effects Effects 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 230000008878 coupling Effects 0.000 abstract description 5
- 238000010168 coupling process Methods 0.000 abstract description 5
- 238000005859 coupling reaction Methods 0.000 abstract description 5
- 238000011160 research Methods 0.000 abstract description 5
- 238000001514 detection method Methods 0.000 abstract description 4
- 230000031700 light absorption Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000013461 design Methods 0.000 description 6
- 239000003574 free electron Substances 0.000 description 6
- 238000004088 simulation Methods 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 230000002238 attenuated effect Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000002835 absorbance Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C14/10—Glass or silica
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
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Abstract
The invention relates to a metamaterial near-infrared broadband absorber and a preparation method thereof. The metamaterial near-infrared broadband absorber comprises a substrate, a metal bottom layer, a middle dielectric layer, a metal micro-structure layer and a top dielectric layer, wherein the metal bottom layer, the middle dielectric layer, the metal micro-structure layer and the top dielectric layer are sequentially covered on the substrate from bottom to top, the metal micro-structure layer is formed by periodically arranging a plurality of metal micro-structures in an array mode, a metal-dielectric-metal structure is formed by combining the metal bottom layer and the middle dielectric layer, local surface plasma resonance is formed on the surface of a metal pattern, meanwhile, magnetic resonance is formed between the metal pattern and the metal bottom layer and the middle dielectric layer, perfect absorption is realized in a wave band of 1000-3000 nm under the effect of resonance coupling, and the arrangement of the top dielectric layer can effectively limit energy carried by evanescent waves in the structure, so that the reflection of the structure is reduced; the metal microstructure is relatively simple, can realize large-area preparation, has low manufacturing cost, and has important reference value in the research of the fields of infrared stealth, infrared detection and the like.
Description
Technical Field
The invention relates to the technical field of infrared absorbers, in particular to a metamaterial near-infrared broadband absorber and a preparation method thereof.
Background
The metamaterial is a composite material with a periodic structure and manufactured by manual design, is an important research branch in the field of the metamaterial, and has important application in the fields of sensors, filters, infrared stealth, photoelectric detection, solar photovoltaics and the like. In 2008, landy et al (Physical Review Letters, volume 100, page 207402) proposed for the first time a single-frequency perfect absorber consisting of a metallic split ring resonator and a metallic wire, in which structure 99% perfect absorption is achieved around 11.5GHz by coupling of electromagnetic resonances generated by the resonant ring and the underlying metallic layer with the incident electromagnetic wave. After this, according to the design concept of Landy, tao et al (Physical Review B, volume 78, page 241103) achieved near perfect absorption again at 1.6THz with 99.9% absorption by changing the cell structure shape and optimizing the structural parameters. However, due to the limitation of the micro-nano processing technology, the wave band of the absorber stays in the microwave and terahertz wave bands. In 2010, the Cui et al design realized a near-infrared band narrowband absorber (NANO litters, volume 10, pages 2342-2348) that uses a classical MIM (metal-dielectric-metal) structure, an upper tetragonal gold disk, a middle layer of magnesium fluoride film, a bottom layer of gold film, blocking light transmission, and almost zero reflection at a wavelength of 1.6 μm, achieving near-99% near perfect absorption. Thereafter, there are many absorbers in the near infrared band based on the visible light of the MIM structure, but most absorbers absorb unimodal or multimodal, and it is difficult to achieve a wide range of continuous high absorption. To achieve continuous high absorption in a wide range, the most common practice today is to implement resonance coupling of multiple frequency bands by integrating microstructures of multiple sizes in a unit cell based on MIM structures, thereby achieving broadband absorption. However, as the microstructure morphology is more and more complex in size design, the preparation cost of the absorber is increased, and meanwhile, the preparation of the nano-scale complex geometric structure requires high-cost technologies such as nano printing and photoetching, and the preparation efficiency is lower.
In summary, how to realize perfect absorption in the absorber in the near infrared band in a wider range and solve the current situation that the structural design of the broadband absorber is more and more complicated and the preparation cost is gradually increased is still a difficult problem in the current scientific and technical fields. Therefore, the design of the near infrared spectrum range perfect light absorber which has simple structure, can be prepared in a large area and has low cost has very important practical significance and application value for solving the problems of narrow bandwidth, low absorptivity, high preparation cost and the like of the absorber in the existing research.
Disclosure of Invention
Based on the above, the invention aims to solve at least one technical problem in the prior art and provide a metamaterial near-infrared broadband absorber which has the advantages of simple structure, low process cost and high absorptivity.
A metamaterial near-infrared broadband absorber comprises a substrate, a metal bottom layer, a middle dielectric layer, a metal microstructure layer and a top dielectric layer, wherein the metal bottom layer, the middle dielectric layer, the metal microstructure layer and the top dielectric layer are sequentially covered on the substrate from bottom to top, and the metal microstructure layer is formed by a plurality of metal microstructures in a periodic array mode according to a hexagonal lattice.
The metamaterial near-infrared broadband absorber provided by the embodiment of the invention combines the metal micro-nano structure arranged in a periodic array with the metal bottom layer and the middle dielectric layer to form a metal-dielectric-metal structure, the surface of the metal pattern forms local surface plasmon resonance, and meanwhile, magnetic resonance is formed between the metal pattern and the metal bottom layer and the middle dielectric layer, perfect absorption is realized in a wave band of 1000-3000 nm under the action of resonance coupling, the average absorption rate is up to more than 98%, higher absorption rate can be achieved in a wavelength range of 2000nm, and the movement of an absorption wave band can be realized by fine adjustment of absorber structural parameters.
In addition, the metamaterial near-infrared broadband absorber is further provided with the top dielectric layer on the metal microstructure layer, when the incident electromagnetic wave is incident on the metal surface, free electrons in the metal can form specific arrangement under the influence of the incident electromagnetic wave, surface plasmon waves formed by the arrangement of the free electrons are rapidly attenuated in the direction perpendicular to the interface and propagate along the interface, and the dielectric layer is added on the top layer, so that energy carried by evanescent waves can be effectively limited in the structure, and reflection of the structure is reduced. In addition, the magnetic field localized at the top of the metal disk due to localized surface plasmon modes can also be effectively confined in the structure by the dielectric. At the same time, the top dielectric layer also reduces reflection from the structured surface and increases light transmittance.
The metal microstructure of the metamaterial near-infrared absorber is relatively simple, large-area preparation can be realized, the manufacturing cost is low, and the metamaterial near-infrared absorber has important reference value in research in the fields of infrared stealth, infrared detection and the like.
Further, the material of the substrate is selected from silicon or quartz; and the materials of the middle dielectric layer and the top dielectric layer are selected from one or more of silicon dioxide, magnesium fluoride and titanium dioxide.
Further, the material of the metal bottom layer is one or more of chromium, silver, aluminum, gold, copper and iron, and the metal bottom layer plays a role in preventing transmission of incident light; the material of the metal microstructure layer is selected from one or more of chromium, titanium and tungsten.
Further, the thickness of the metal bottom layer is not less than 100nm so as to ensure that incident light cannot pass through; the thickness range of the middle dielectric layer is 100-200 nm; the thickness range of the top dielectric layer is 100-300 nm, and the thickness range of the middle dielectric layer is preferably limited, so that the influence on the absorptivity of electromagnetic waves caused by insufficient absorption of coupled electromagnetic wave energy by high-loss dielectrics due to the fact that the thickness of the middle dielectric layer is too thin is prevented.
Further, the metal microstructures comprise a plurality of metal microstructure groups which are arranged in an array, each metal microstructure group comprises 1 central microstructure and 4 sub-microstructures which are symmetrically arranged outside the edges of the central microstructure, and the distance between the center of the central microstructure and the center of the sub-microstructure ranges from 300nm to 500nm.
Further, the central microstructure and the sub-microstructure are metal discs with the same radius, the radius range is 30-500 nm, and the thickness range is 5-20 nm. Whether the incident electromagnetic wave energy and the resonant cavity generate resonance has a great relation with the size of the resonant cavity, and the matching effect of the resonant cavity and the incident electromagnetic wave can be fully improved by limiting the size of the metal disc, so that the absorption effect is effectively improved.
In addition, the embodiment of the invention also provides a preparation method of the metamaterial near-infrared broadband absorber, which comprises the following specific operation steps:
1) Uniformly depositing a metal bottom layer with uniform thickness on a substrate by a physical deposition method;
2) Uniformly depositing a middle dielectric layer with consistent thickness on the metal bottom layer by a physical deposition method;
3) Placing a microstructure template above the middle dielectric layer, wherein the microstructure template is of a platy structure, a plurality of through holes are formed in a penetrating manner, the through holes are arranged in an array mode according to a preset mode, and the shape and the size of the through holes are correspondingly matched with those of the metal microstructure; then uniformly depositing on the middle dielectric layer from the upper side of the microstructure template by a physical deposition method, and removing the microstructure template to obtain a metal microstructure layer with consistent thickness;
4) And uniformly depositing a top dielectric layer with uniform thickness on the metal microstructure layer by a physical deposition method.
The preparation method of the metamaterial near-infrared broadband absorber is simple in preparation process, and compared with the existing near-infrared broadband absorber, the preparation method of the metamaterial near-infrared broadband absorber is lower in production cost by adopting a relatively low-cost processing production process, large in sample area, capable of realizing large-area sample preparation, wider in bandwidth of the prepared absorber and capable of maintaining higher absorptivity in a wider range.
Further, the physical deposition method comprises magnetron sputtering deposition, vacuum electron beam deposition and ion beam sputtering deposition.
Further, the microstructure template is prepared by a thermal nanoimprint technology.
The physical deposition method and the thermal nanoimprint technique are low in production cost and convenient for large-area preparation.
For a better understanding and implementation, the present invention is described in detail below with reference to the drawings.
Drawings
FIG. 1 is a schematic perspective view of a metamaterial near-infrared broadband absorber according to the present invention;
FIG. 2 is a schematic cross-sectional view of a metamaterial near-infrared broadband absorber according to the present invention;
FIG. 3 is a schematic perspective view of the metamaterial near-infrared broadband absorber of the present invention after the top dielectric layer is removed;
FIG. 4 is a schematic top view of a single set of the metal microstructure set of the present invention;
FIG. 5 is a light absorption diagram of a near infrared broadband absorber of metamaterial according to example 1 of the present invention;
FIG. 6 is a graph showing the light absorption of a near infrared broadband absorber made of metamaterial according to example 2 of the present invention;
FIG. 7 is a light absorption diagram of a near infrared broadband absorber made of metamaterial according to example 3 of the present invention;
FIG. 8 is a light absorption diagram of a near infrared broadband absorber made of metamaterial according to example 4 of the present invention;
fig. 9 is a light absorption diagram of a near infrared broadband absorber made of metamaterial according to embodiment 5 of the present invention.
Detailed Description
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention.
Referring to fig. 1 to 3, fig. 1 is a schematic perspective view of a metamaterial near-infrared broadband absorber according to the present invention, fig. 2 is a schematic cross-sectional view of the metamaterial near-infrared broadband absorber according to the present invention, and fig. 3 is a schematic perspective view of the metamaterial near-infrared broadband absorber after removing a top dielectric layer according to the present invention. As shown in the figure, the embodiment of the invention provides a metamaterial near-infrared broadband absorber, which comprises a substrate 1, a metal bottom layer 2, a middle dielectric layer 3, a metal microstructure layer 4 and a top dielectric layer 5 which are fixedly connected in sequence.
The substrate 1 is positioned at the lowest layer of the structure, and as a base of the structure, silicon or quartz is selected as a material, and the thickness h1 of the substrate is 5mm.
A metal underlayer 2 is deposited on the substrate 1; the metal bottom layer 2 plays a role in preventing transmission of incident light, and is made of one or more of chromium, silver, aluminum, gold, copper and iron, and the thickness h2 of the metal bottom layer is not less than 100nm so as to ensure that the incident light cannot pass through.
The middle dielectric layer 3 is deposited on the metal bottom layer 2, the material of the middle dielectric layer 3 is selected from one or more of silicon dioxide, magnesium fluoride and titanium dioxide, and the thickness range h3 is 100-200 nm.
The metal microstructure layer 4 is positioned above the middle dielectric layer 3, and the metal microstructure layer 4 is formed by periodically arranging a plurality of metal microstructures in an array manner; as an alternative implementation manner, in this embodiment, the metal microstructure layer 4 includes a plurality of metal microstructure groups arranged in an array, referring to fig. 4, fig. 4 is a schematic top view of a single metal microstructure group according to the present invention, as shown in the drawing, each metal microstructure group includes 1 central microstructure 41 and 4 sub-microstructures 42 symmetrically disposed outside the edges of the central microstructure 41, and a distance range P between the center of the central microstructure 41 and the center of the sub-microstructure 42 is 300-500 nm; further, the central microstructure 41 and the sub-microstructure 42 are metal discs with the same radius, the radius range R1 is 30-500 nm, and the thickness range h4 is 5-20 nm.
The top dielectric layer 5 is deposited directly over the metal microstructures 4, filling the gaps between the metal microstructures, see fig. 3, with a thickness h5 in the range 300-500 nm.
In addition, the embodiment of the invention also provides a preparation method of the metamaterial near-infrared broadband absorber, which comprises the following specific operation steps:
1) Uniformly depositing a metal bottom layer 2 with uniform thickness on a substrate 1 by a physical deposition method;
2) Uniformly depositing a middle dielectric layer 3 with uniform thickness on a metal bottom layer 2 by a physical deposition method;
3) Placing a microstructure template above the middle dielectric layer 3, wherein the microstructure template is of a platy structure, a plurality of through holes are formed in a penetrating manner, the through holes are arranged in an array mode according to a preset mode, and the shape and the size of the through holes are correspondingly matched with those of the metal microstructure; then uniformly depositing on the middle dielectric layer 3 from the upper part of the microstructure template by a physical deposition method, and removing the microstructure template to obtain a metal microstructure layer 4 with consistent thickness, namely, as shown in fig. 3, the metal microstructure layer 4 is a convex structure arranged on the middle dielectric layer 3 in an array mode according to a preset mode, and the height of the convex is the thickness h4 of the metal microstructure layer 4;
4) Uniformly depositing a top dielectric layer 5 with uniform thickness on the metal microstructure layer 4 by a physical deposition method; since the deposition of the top dielectric layer 5 is uniform, it is capable of filling voids within the metal microstructure during the deposition process, and thus, as shown in fig. 1 and 3, the upper surface of the top dielectric layer 5 has protrusions matching the shape of the metal microstructure, the height of which is equal to the thickness h4 of the metal microstructure layer 4 after the filling is completed.
The physical deposition method comprises magnetron sputtering deposition, vacuum electron beam deposition and ion beam sputtering deposition. The microstructure template is prepared by a thermal nanoimprint technology.
The physical deposition method and the thermal nanoimprint technique are low in production cost and convenient for large-area preparation.
The technical solutions are described below in comparison with a few examples.
Example 1
The embodiment 1 of the invention provides a metamaterial near-infrared broadband absorber, wherein: the substrate 1 is a silicon substrate, the thickness h1 is 5mm, the metal bottom layer 2 is metal chromium, the thickness h2 is set to 100nm, the middle dielectric layer 3 is silicon dioxide, the thickness h3 is set to 110nm, the metal disc material is metal chromium, the thickness h4 is 20nm, the disc period P is 300nm, the radius R1 is 130nm, the thickness h5 of the top dielectric layer is 270nm, and the material is silicon dioxide.
Example 2
The embodiment 2 of the invention provides a metamaterial near-infrared broadband absorber, wherein: the substrate 1 is a quartz substrate, the thickness h1 is 5mm, the metal bottom layer 2 is metal chromium, the thickness h2 is 110nm, the middle dielectric layer 3 is silicon dioxide, and the thickness h3 is 140nm. The metal disc 4 is made of metal chromium, the thickness h4 is 15nm, the disc period P is 500nm, the radius R1 is 180nm, the thickness h5 of the top dielectric layer is 180nm, and the material is silicon dioxide.
Example 3
The embodiment 3 of the invention provides a metamaterial near-infrared broadband absorber, wherein: the substrate 1 is a silicon substrate with the thickness of 5mm, the metal bottom layer 2 is metal chromium with the thickness h2 being 100nm, the middle dielectric layer 3 is silicon dioxide with the thickness h3 being 110nm, the metal disc material is metal chromium with the thickness h4 being 20nm, the disc period is 300nm, and the radius R1 is 130nm.
Example 4
The embodiment 4 of the invention provides a metamaterial near-infrared broadband absorber, wherein: the substrate 1 is a silicon substrate, the thickness h1 is 5mm, the metal bottom layer 2 is metal chromium, the thickness h2 is set to 100nm, the middle dielectric layer 3 is silicon dioxide, the thickness h3 is set to 30nm, the metal disc material is metal chromium, the thickness h4 is 20nm, the disc period P is 300nm, and the radius R1 is 130nm. The thickness h5 of the top dielectric layer is 270nm, and the material is silicon dioxide.
Example 5
The embodiment 5 of the invention provides a metamaterial near-infrared broadband absorber, wherein: the substrate 1 is a silicon substrate, the thickness h1 is 5mm, the metal bottom layer 2 is metal chromium, the thickness h2 is set to 100nm, the middle dielectric layer 3 is silicon dioxide, the thickness h3 is set to 110nm, the metal disc material is metal chromium, the thickness h4 is 20nm, the disc period P is 300nm, the radius R1 is 100nm, the thickness h5 of the top dielectric layer is 270nm, and the material is silicon dioxide.
The metamaterial near-infrared broadband absorbers described in examples 1-5 are all prepared by layer-by-layer deposition by using a magnetron sputtering coating technology.
Performance testing was performed on the metamaterial near infrared broadband absorbers prepared in examples 1-5: the minimum cell of the optical device structure is simulated by a time domain finite difference method (FDTD), corresponding boundary conditions are set for simulation, a simulation result is calculated, and the measured simulation spectrograms are shown in figures 5-9 so as to show the near infrared light absorption effect of the metamaterial infrared broadband absorber through the simulation result. Meanwhile, in the comparative test, an opaque metal material is used as a substrate, the transmittance T of the structure to light is measured to be 0, and the absorption A=1-R-T is obtained according to the formula, so that the absorption is only related to the reflectivity.
FIG. 5 is a graph showing the light absorption of the near infrared broadband absorber of example 1 of the present invention, and as shown in FIG. 5, it can be found from the simulated spectrum that the overall absorption from 1000nm to 3300nm is over 90%, the wavelength range is 2300nm, the overall absorption is almost 99% at 1200nm to 3000nm, the wavelength range is 1800nm, and the maximum absorption at 1700nm is 99.97%.
Fig. 6 is a light absorption diagram of the metamaterial near-infrared broadband absorber according to embodiment 2 of the present invention, as shown in fig. 6, the absorbance exceeds 90% in the wavelength range of 650nm to 3180nm, the near-infrared band is perfectly covered, and the absorbance is 98% or more at 900nm and 1700nm to 2730 nm.
Fig. 7 is a light absorption diagram of a metamaterial near-infrared broadband absorber according to embodiment 3 of the present invention, as a control group of example 1, the metamaterial near-infrared broadband absorber according to embodiment 3 is not provided with the top dielectric layer. As can be seen by comparing fig. 5 and fig. 7, the absorption bandwidth and the absorption rate are significantly reduced after the top dielectric layer is removed, which indicates that the top dielectric layer plays a critical role in perfect broadband absorption. The incident electromagnetic wave is incident on the surface of the metal, free electrons in the metal can form specific arrangement under the influence of the incident electromagnetic wave, surface plasma laser waves formed by the arrangement of the free electrons are rapidly attenuated in the direction perpendicular to the interface and propagate along the interface, and the dielectric layer is added on the top layer, so that the energy carried by evanescent waves can be effectively limited in the structure, the absorption of the energy of the evanescent waves generated by resonance is facilitated, and the reflection of the structure is reduced. In addition, the magnetic field localized at the top of the metal disk due to localized surface plasmon modes can also be effectively confined in the structure by the dielectric. At the same time, the top dielectric layer, such as the silicon dioxide film in the embodiment 3, reduces the reflection of the surface of the structure and increases the transmittance of light, and the optical thickness of the film is theoretically one quarter of the wavelength of the incident light in the medium according to the antireflection film of the quarter-wavelength method, so that the antireflection effect of the film can be best achieved by preferably limiting the thickness of the top dielectric layer.
Fig. 8 is a light absorption diagram of a metamaterial near-infrared broadband absorber according to example 4 of the present invention, wherein the thickness of the middle dielectric layer is changed as a control group of example 1 in the metamaterial near-infrared broadband absorber according to example 4. As can be seen from comparing FIG. 5 with FIG. 8, the absorption rate of the metamaterial near-infrared broadband absorber in the embodiment 4 is obviously reduced in the wavelength range from 650nm to 3180nm, the absorption rate of the highest point is less than 90%, and the bandwidth is obviously narrowed. It follows that the high-loss electrolyte cannot sufficiently absorb the coupled electromagnetic wave energy when the intermediate dielectric layer is thinned. Therefore, the thickness value of the middle dielectric layer has obvious influence on the absorption effect, and good absorption effect can be achieved only in the thickness range.
Fig. 9 is a light absorption diagram of the metamaterial near-infrared broadband absorber according to embodiment 5 of the present invention, and as a control group of embodiment 1, the radius of the metal disc is changed in the metamaterial near-infrared broadband absorber according to embodiment 4, and by comparing fig. 5 and fig. 9, it can be seen that the absorption rate is significantly changed, the absorption peak in the long band is significantly reduced, and only one absorption peak in the short band is left. Whether the incident electromagnetic wave is resonant with the resonant cavity has a great relationship with the size of the resonant cavity. In order to produce the best absorption effect, the size of the resonant cavity, namely the metal structure, can be matched with the best size through the adjustment of the radius of the disc, so that the best absorption effect is achieved.
It can be seen from the foregoing that, according to the metamaterial near-infrared broadband absorber provided by the embodiment of the invention, by setting the metal micro-nano structure periodically arranged in an array manner and combining the metal bottom layer and the middle dielectric layer, a metal-dielectric-metal structure is formed, the surface of the metal pattern forms local surface plasmon resonance, and meanwhile, magnetic resonance is formed between the metal pattern and the metal bottom layer and the middle dielectric layer, perfect absorption is realized in a wave band of 1000-3000 nm under the action of resonance coupling, the average absorption rate is up to more than 98%, in a wavelength range of 2000nm, higher absorption rate can be achieved, and by preferably designing the geometric structure parameters of the metamaterial absorber, a proper structural material is selected, so that the absorber structure can generate multiple strong electromagnetic resonance modes, and meanwhile, the movement of the absorption wave band is realized by fine tuning the structural parameters of the absorber.
In addition, the metamaterial near-infrared broadband absorber is further provided with the top dielectric layer on the metal microstructure layer, when the incident electromagnetic wave is incident on the metal surface, free electrons in the metal can form specific arrangement under the influence of the incident electromagnetic wave, surface plasmon waves formed by the arrangement of the free electrons are rapidly attenuated in the direction perpendicular to the interface and propagate along the interface, and the dielectric layer is added on the top layer, so that energy carried by evanescent waves can be effectively limited in the structure, and reflection of the structure is reduced. In addition, the magnetic field localized at the top of the metal disk due to localized surface plasmon modes can also be effectively confined in the structure by the dielectric. At the same time, the top dielectric layer also reduces reflection from the structured surface and increases light transmittance.
The metal microstructure of the metamaterial near-infrared absorber is relatively simple, large-area preparation can be realized, the manufacturing cost is low, and the metamaterial near-infrared absorber has important reference value in research in the fields of infrared stealth, infrared detection and the like.
The preparation method of the metamaterial near-infrared broadband absorber is simple in preparation process, and compared with the existing near-infrared broadband absorber, the preparation method of the metamaterial near-infrared broadband absorber is lower in production cost by adopting a relatively low-cost processing production process, large in sample area, capable of realizing large-area sample preparation, wider in bandwidth of the prepared absorber and capable of maintaining higher absorptivity in a wider range.
The above examples illustrate only a few embodiments of the invention, which are described in detail and are not to be construed as limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention.
Claims (7)
1. A metamaterial near-infrared broadband absorber is characterized in that: the metal micro-structure comprises a substrate, a metal bottom layer, a middle dielectric layer, a metal micro-structure layer and a top dielectric layer, wherein the metal bottom layer, the middle dielectric layer, the metal micro-structure layer and the top dielectric layer are sequentially covered on the substrate from bottom to top, and the metal micro-structure layer is formed by periodically arranging a plurality of metal micro-structures in an array manner;
the metal microstructures comprise a plurality of metal microstructure groups which are arranged in an array, each metal microstructure group comprises 1 central microstructure and 4 sub-microstructures which are symmetrically arranged outside the edges of the central microstructure, and the distance between the center of the central microstructure and the center of the sub-microstructure is 300-500 nm;
the central microstructure and the sub-microstructure are metal discs with the same radius, the radius range is 30-500 nm, and the thickness range is 5-20 nm;
the top dielectric layer is deposited on the metal microstructures and fills gaps among the metal microstructures; the top dielectric layer is silicon dioxide.
2. The metamaterial near infrared broadband absorber of claim 1, wherein: the material of the substrate is selected from silicon or quartz; and the materials of the middle dielectric layer and the top dielectric layer are selected from one or more of silicon dioxide, magnesium fluoride and titanium dioxide.
3. The metamaterial near infrared broadband absorber of claim 1, wherein: the material of the metal bottom layer is selected from one or more of chromium, silver, aluminum, gold, copper and iron; the material of the metal microstructure layer is selected from one or more of chromium, titanium and tungsten.
4. The metamaterial near infrared broadband absorber of claim 1, wherein: the thickness of the metal bottom layer is not less than 100nm; the thickness range of the middle dielectric layer is 100-200 nm; the thickness of the top dielectric layer ranges from 100nm to 300nm.
5. A method for preparing the metamaterial near-infrared broadband absorber according to any one of claims 1 to 4, comprising the following specific operation steps:
1) Uniformly depositing a metal bottom layer with uniform thickness on a substrate by a physical deposition method;
2) Uniformly depositing a middle dielectric layer with consistent thickness on the metal bottom layer by a physical deposition method;
3) Placing a microstructure template above the middle dielectric layer, wherein the microstructure template is of a platy structure, a plurality of through holes are formed in a penetrating manner, the through holes are arranged in an array mode according to a preset mode, and the shape and the size of the through holes are correspondingly matched with those of the metal microstructure; then uniformly depositing on the middle dielectric layer from the upper side of the microstructure template by a physical deposition method, and removing the microstructure template to obtain a metal microstructure layer with consistent thickness;
4) And uniformly depositing a top dielectric layer with uniform thickness on the metal microstructure layer by a physical deposition method.
6. The method for preparing the metamaterial near-infrared broadband absorber according to claim 5, wherein the method comprises the following steps: the physical deposition method comprises magnetron sputtering deposition, vacuum electron beam deposition and ion beam sputtering deposition.
7. The method for preparing the metamaterial near-infrared broadband absorber according to claim 6, wherein the method comprises the following steps: the microstructure template is prepared by a thermal nanoimprint technology.
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| CN108520903A (en) * | 2018-05-10 | 2018-09-11 | 江西师范大学 | Visible-near infrared region broadband perfect absorber and preparation method thereof |
| WO2019029207A1 (en) * | 2017-08-11 | 2019-02-14 | 中国科学院上海微系统与信息技术研究所 | Electromagnetic absorption metamateria |
| CN112698433A (en) * | 2020-12-28 | 2021-04-23 | 中国科学院微电子研究所 | Metamaterial infrared absorber and manufacturing method thereof |
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| WO2019029207A1 (en) * | 2017-08-11 | 2019-02-14 | 中国科学院上海微系统与信息技术研究所 | Electromagnetic absorption metamateria |
| CN108520903A (en) * | 2018-05-10 | 2018-09-11 | 江西师范大学 | Visible-near infrared region broadband perfect absorber and preparation method thereof |
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