CN117134124A - Ultra-wideband metamaterial absorber and preparation method - Google Patents
Ultra-wideband metamaterial absorber and preparation method Download PDFInfo
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- CN117134124A CN117134124A CN202311265194.3A CN202311265194A CN117134124A CN 117134124 A CN117134124 A CN 117134124A CN 202311265194 A CN202311265194 A CN 202311265194A CN 117134124 A CN117134124 A CN 117134124A
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- 239000006096 absorbing agent Substances 0.000 title claims abstract description 43
- 238000002360 preparation method Methods 0.000 title claims abstract description 6
- 239000002063 nanoring Substances 0.000 claims abstract description 42
- 239000002070 nanowire Substances 0.000 claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims abstract description 35
- 239000002184 metal Substances 0.000 claims abstract description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 32
- 239000010703 silicon Substances 0.000 claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 claims abstract description 4
- 230000004888 barrier function Effects 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 11
- 229920000515 polycarbonate Polymers 0.000 claims description 9
- 239000004417 polycarbonate Substances 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000002052 molecular layer Substances 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 abstract description 17
- 230000009286 beneficial effect Effects 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000012545 processing Methods 0.000 abstract description 4
- 230000031700 light absorption Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 10
- 238000009826 distribution Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 239000013598 vector Substances 0.000 description 4
- 229910001186 potin Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
- H01P11/008—Manufacturing resonators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
- H01P7/08—Strip line resonators
- H01P7/082—Microstripline resonators
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
The invention belongs to the field of metamaterial, and particularly relates to an ultra-wideband metamaterial absorber and a preparation method thereof. The ultra-wideband metamaterial absorber comprises a nanowire array formed by alternately arranging Ti and ZnS nano-rings in multiple layers and a bottom metal layer formed by a silicon nanowire layer, wherein the nanowire array and the nanowire layer resonate under resonance waves with different wavelengths, electromagnetic waves with different wavelengths are absorbed differently at different positions of a resonator structure, and the absorption and bandwidth of the absorber from visible light to long-wave infrared are enlarged. The special structure of the invention is beneficial to the absorption of light with different wavelengths, expands the absorption and bandwidth of the absorber, compared with the absorber with the existing planar arrangement mode, the invention overcomes the limitation of the resonator, improves the absorption bandwidth, and compared with the existing vertically stacked absorber, the invention overcomes the problems of high processing technology requirement, time consumption in manufacturing and larger volume.
Description
Technical Field
The invention belongs to the field of metamaterial, and particularly relates to an ultra-wideband metamaterial absorber and a preparation method thereof.
Background
Electromagnetic wave absorbers operating at different wavelengths are important for many applications, chemical sensing, solar collection, solar thermo-optic, and optical detection applications. The metamaterial is formed by composite design of an artificial structure, has unique optical characteristics which are not possessed by natural materials, and is widely used for manufacturing perfect absorbers. Broadband absorption is essential for certain applications, such as solar energy collection, solar thermo-optic, radiation cooling and light detection, while at the same time requiring that the absorber be capable of achieving high absorption efficiency. The most straightforward approach that is commonly adopted is to place resonators in a plane in each cell to create multiple resonances to achieve broadband absorption, however this design is difficult to achieve a wider absorption bandwidth due to the limitations of the resonators themselves. In addition, the placement of multiple resonators in a vertical stack is the simplest method for achieving broadband absorption, but the absorber with such a complex structure is manufactured, and the processing technology has high requirements, time consumption and large volume.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides an ultra-wideband metamaterial absorber and a preparation method thereof, and solves the problems that the high-bandwidth absorption spectrum cannot be provided due to the limitation of a resonator, the processing technology is complex and time-consuming and the like caused by the methods of arranging the resonators in a plane or vertically stacking the resonators in the traditional way. The technical scheme of the invention is as follows:
an ultra-wideband metamaterial absorber comprises a substrate layer, a metal barrier layer, a nano array and a silicon nanowire layer, wherein the silicon nanowire layer is positioned on the top layer, and the metal barrier layer is formed on the substrate layer through electron beam evaporation deposition; the nano-array is positioned on the metal barrier layer, and comprises 4 layers of nano-rings, wherein each layer of nano-rings comprises Ti and ZnS nano-rings which are alternately arranged to form n pairs of metal dielectric nano-rings. Each layer of the nano-ring array from bottom to topThe radius of the nano ring is as follows: radius r of first layer nanoring 1 500nm-9900nm, radius r of the second layer nano ring 2 Radius r of the third layer nano ring is 400nm-9800nm 3 The value range is 300 nm-9700nm, and the radius r of the fourth layer of nano ring 4 200 nm-9600nm. The upper layer of the dielectric nano ring is metal Ti, and the height h of the upper layer of the dielectric nano ring 1 10 nm-300nm, the lower layer is dielectric ZnS, and the height h of the lower layer of the dielectric nano ring 2 10 nm-600nm. Radius r of silicon nanowire layer of the silicon nanowire layer 5 The height h of the silicon nanowire layer is 100nm-1000nm and is 100 nm-950 nm.
A method for preparing the ultra-wideband metamaterial absorber, comprising the following steps:
sequentially depositing Ti as an adhesion layer and Pb as a metal barrier layer on the substrate layer through electron beam evaporation respectively;
growing a bottom nanowire layer to obtain a first layer, a second layer, a third layer and a fourth layer for preparing the nano array and a silicon nano layer;
wherein the growing the bottom nanowire layer comprises: obtaining a silicon nanowire with a preset diameter and a preset period; coating silicon dioxide with a required diameter on the outer side of the silicon nanowire; spin-coating polycarbonate into the voids of the structure and removing excess polycarbonate; removing the silicon dioxide shell; alternately depositing Ti and ZnS to form a metal dielectric pair, wherein the upper layer of the metal dielectric pair is a Ti nano ring, and the lower layer of the metal dielectric pair is a ZnS nano ring; the Ti/ZnS multilayer film over the polycarbonate and silicon nanowires was removed.
Compared with the prior art, the invention has the following beneficial effects: the ultra-wideband metamaterial absorber comprises a nanowire array formed by alternately arranging Ti and ZnS nano-rings in multiple layers and a bottom metal layer formed by a silicon nanowire layer, wherein the nanowire array and the nanowire layer resonate under resonance waves with different wavelengths, electromagnetic waves with different wavelengths are absorbed differently at different positions of a resonator structure, and the absorption and bandwidth of the absorber from visible light to long-wave infrared are enlarged. The special structure of the invention is beneficial to the absorption of light with different wavelengths, expands the absorption and bandwidth of the absorber, compared with the absorber with the existing planar arrangement mode, the invention overcomes the limitation of the resonator, improves the absorption bandwidth, and compared with the existing vertically stacked absorber, the invention overcomes the problems of high processing technology requirement, time consumption in manufacturing and larger volume.
Drawings
FIG. 1 is a schematic diagram of an ultra wideband metamaterial absorber structure in accordance with the present invention;
FIG. 2 is another schematic diagram of an ultra wideband metamaterial absorber structure of the present invention;
FIG. 3 is a schematic illustration of the process flow of the ultra wideband metamaterial absorber of the present invention;
FIG. 4 is an absorption diagram of the ultra wideband metamaterial absorber of the present invention under normal incidence
FIG. 5 is a graph of the magnetic field distribution and Potin vector of a hyperbolic metamaterial at typical wavelengths from short-wave to long-wave infrared for an ultra-wideband metamaterial absorber of the present invention;
fig. 6 is a graph showing electric field distribution and absorption energy distribution at different wavelengths of the ultra-wideband metamaterial absorber of the present invention.
Detailed description of the preferred embodiments
The invention will be further described with reference to the accompanying drawings.
Example 1
As shown in fig. 1-2, the ultra-wideband metamaterial absorber of the present embodiment includes a substrate layer, a metal barrier layer, a nano array, and a silicon nanowire layer, where the silicon nanowire layer is located on a top layer. The substrate layer is made of monocrystalline silicon or glass, and the metal barrier layer is formed by depositing a layer of metal platinum on the substrate layer through electron beam evaporation. The nano array is formed by growing nano rings at the bottom through a coaxial photoetching method, ti and ZnS nano rings are alternately arranged to form n pairs of metal dielectric nano ring pairs, the n pairs of metal dielectric nano ring pairs become one layer of the absorber, and the metal dielectric pairs of four layers of nano rings are formed by repeating three times in the same method. Illustratively, n is an integer from 3 to 20.
Radius r of the nano-ring array from bottom layer to top layer 1 The value range is 500nm-9900nm, r 2 The value range is 400nm-9800nm, r 3 The value range is 300 nm-9700nm, r 4 The value range is 200 nm-9600nm, r 5 The value range is 100 nm-9500 nm. The upper layer of the metal dielectric nano ring is a T metal layer Ti with the height h 1 The value range is 10 nm-300nm, the lower layer is dielectric ZnS, and the height h of the layer is 2 The value range is 10 nm-600nm. Height h of the top silicon nanowire layer 3 The range of the value of the (B) is 100nm-1000nm. The height of the metal barrier layer is 50-1000 nm, the period of the metal barrier layer is px and py, and the value range is 1100-20000 nm;
example two
As shown in fig. 3, the present embodiment provides a method for preparing the ultra-wideband metamaterial absorber of the first embodiment, comprising the steps of:
step (1): providing a substrate layer, wherein the substrate layer is made of P-type epitaxial monocrystalline silicon;
step (2): and respectively depositing 20nm Ti serving as an adhesion layer and 300nm Pb serving as a metal barrier layer on the silicon wafer by electron beam evaporation, wherein the electron beam evaporation rate is 2nm/s. Circumference p of each cell x =p y =p=3000nm。
Step (3): growing a bottom nanowire layer through five steps, wherein the radius of the bottom nanoring is r 1 =1450 nm. First, diameter r is obtained by combining colloid lithography with metal-assisted chemical etching 1 And a period p of silicon nanowires. And secondly, coating the silicon dioxide with the required diameter on the outer side of the silicon nanowire through a sol-gel process. Third, polycarbonate is spin-coated into the voids of the structure, excess polycarbonate is removed using an oxygen plasma etcher, and the SiO2 shell is removed with a hydrofluoric acid solution. Fourth, alternately depositing Ti and ZnS by vacuum evaporation to form n=5 pairs of metal-dielectric pairs, wherein the metal dielectric pairs have a height h of Ti nanorings 1 Height h of zns nanoring =15 nm 2 =140 nm. And fifthly, removing the Ti/ZnS multilayer film above the polycarbonate and Si nanowires to obtain the bottom structure.
Step (4): preparing a second layer, a third layer and a fourth layer of the nano array from bottom to top by using the method of the step (3), wherein the radius is r respectively 2 =1150nm，r 3 =850nm，r 4 =550nm。
Step (5): using the method of step (3), the nanowire material is silicon, and the top silicon nano layer is obtained, and the radius is r 5 Height h of top layer =250 nm 3 =240 nm, resulting in absorber structure.
Step (6): packaging into absorber product.
The values of the parameters in the method steps of preparing the ultra-wideband metamaterial absorber of the above embodiments are merely exemplary representations, not meant to be limiting. The values of the parameters may be specifically set according to the ultra wideband metamaterial absorber of the first embodiment.
The performance of the ultra-wideband metamaterial absorber of the present invention under normal incidence conditions is shown in fig. 4, and the ultra-wideband metamaterial absorber of the present invention has a large absorption wavelength range (high bandwidth) and high absorptivity in this wavelength range. The magnetic field distribution and Potin vector diagram of the ultra wideband metamaterial absorber of the present invention at typical wavelengths from short wave infrared to long wave infrared are shown in FIG. 5, where the surface diagram is the magnetic field distribution, the arrows are Potin vectors, and the magnetic field, electric field and absorption energy distribution of the incident light of TM with the wavelengths of 1 μm, 2 μm, 4 μm, 6 μm, 8 μm, 12 μm, 16 μm and 18 μm, respectively, are shown in the figure. The upper part of the metamaterial with the wavelength of 1 μm absorbs most of magnetic field energy. Before the wavelength reaches 6 μm, the silicon nanowire can be regarded as a resonant cavity similar to the fabry-perot cavity resonance generated inside, and the magnetic resonance phenomenon is mainly generated in the silicon nanowire on the top layer, and the energy of the region shifts downwards along with the increase of the resonance wavelength. The electric field distribution and the absorption energy distribution at different wavelengths can be seen from fig. 6. The energy absorbed from 2 μm and 6 μm is mainly consumed at the position near the silicon nanowire, the energy which is not completely consumed is limited to the interface between the metal and the dielectric, the surface plasmon resonance occurs, the electric field is stronger outside the nanoring, and the energy is consumed in the form of Fabry-Perot cavity resonance in the short wavelength region less than or equal to 6 μm. When the resonance wavelength is greater than 6 μm, it is known from the slow light effect that the resonance mode is changed at this time so that the light is confined to a certain fixed position of the structure. At a resonance wavelength of 8 μm, it can be seen in the figure that the main localized area of the magnetic field is not limited to the interior of the silicon nanowire alone in the upper middle of the structure. The pozzolan vector at this point propagates inward along the structure's external interface and energy is dissipated in the form of surface plasmon oscillations. The electric field profiles at wavelengths of 12 μm and 18 μm verify the analysis of resonance wavelengths greater than 6 μm, with the absorbed energy being distributed uniformly to the lower part of the structure. Therefore, the structure is beneficial to the absorption of light with different wavelengths, and the absorption and the bandwidth of the absorber are enlarged.
The foregoing examples and comparative examples are provided to illustrate the technical aspects and advantageous effects of the present invention in further detail, but it is not to be construed that the practice of the present invention is limited to these illustrations. Any modifications, equivalent substitutions, improvements, or the like, which are within the skill of the art to which the present invention pertains, are deemed to be within the scope of the present invention without departing from the concept.
Claims (5)
1. An ultra-wideband metamaterial absorber comprises a substrate layer, a silicon nanowire layer and a metal barrier layer, wherein the silicon nanowire layer is positioned on a top layer; the metal barrier layer is positioned between the substrate layer and the nano array; the nano array is positioned on the metal barrier layer, and comprises 4 layers of nano rings, wherein each layer of nano ring comprises metal dielectric nano rings formed by alternately arranging Ti and ZnS nano rings.
2. The ultra-wideband metamaterial absorber according to claim 1, wherein the range of values of the radius of each layer of nanorings of the nanoring array from bottom to top is: radius r of first layer nanoring 1 500nm-9900nm, radius r of the second layer nano ring 2 Radius r of the third layer nano ring is 400nm-9800nm 3 The value range is 300 nm-9700nm, and the radius r of the fourth layer of nano ring 4 200 nm-9600nm.
3. The ultra-wideband metamaterial absorber according to claim 1 or 2, wherein the upper layer of the metal dielectric nanoring is metalUpper layer height h of Ti 1 The lower layer of the metal dielectric nano ring is dielectric ZnS with the height h of 10 nm-300nm 2 10 nm-600nm.
4. The ultra-wideband metamaterial absorber of claim 3, wherein the silicon nanowire layer radius r of the silicon nanowire layer 5 The height h of the silicon nanowire layer is 100nm-1000nm and is 100 nm-950 nm.
5. A method of making an ultra wideband metamaterial absorber as claimed in any one of claims 1 to 4, comprising the steps of:
sequentially depositing Ti as an adhesion layer and Pb as a metal barrier layer on the substrate layer through electron beam evaporation respectively;
growing a bottom nanowire layer to obtain a preparation nano array and a silicon nano layer;
wherein the growing the bottom nanowire layer comprises:
obtaining a silicon nanowire with a preset diameter and a preset period;
coating silicon dioxide with a required diameter on the outer side of the silicon nanowire;
spin-coating polycarbonate into the voids of the structure and removing excess polycarbonate;
removing the silicon dioxide shell;
alternately depositing Ti and ZnS to form a metal dielectric pair, wherein the upper layer of the metal dielectric pair is a Ti nano ring, and the lower layer of the metal dielectric pair is a ZnS nano ring;
the Ti/ZnS multilayer film over the polycarbonate and silicon nanowires was removed.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311265194.3A CN117134124A (en) | 2023-09-28 | 2023-09-28 | Ultra-wideband metamaterial absorber and preparation method |
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| CN202311265194.3A CN117134124A (en) | 2023-09-28 | 2023-09-28 | Ultra-wideband metamaterial absorber and preparation method |
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