CN114942485A - Self-filtering superconducting nanowire single photon detector - Google Patents
Self-filtering superconducting nanowire single photon detector Download PDFInfo
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- CN114942485A CN114942485A CN202210530142.3A CN202210530142A CN114942485A CN 114942485 A CN114942485 A CN 114942485A CN 202210530142 A CN202210530142 A CN 202210530142A CN 114942485 A CN114942485 A CN 114942485A
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Abstract
The invention discloses a self-filtering superconducting nanowire single photon detector, and belongs to the technical field of photoelectric detection. The invention comprises a superconductive nanowire, wherein the superconductive nanowire is a winding grating, and further comprises a medium substrate, a first photonic crystal serving as a reflecting layer and a second photonic crystal serving as a protecting and filtering layer, the first photonic crystal and the second photonic crystal are formed by alternately laminating a plurality of different media, the first photonic crystal and the second photonic crystal are attached to each other and are arranged on contact surfaces of the first photonic crystal and the second photonic crystal to form an F-P resonant cavity, the superconductive nanowire is embedded in the F-P resonant cavity, the other surface of the first photonic crystal is attached to the medium substrate, and the thickness of each layer of medium of the first photonic crystal and the second photonic crystal is one-quarter of characteristic wavelength. The invention realizes the self-band light filtering effect of the superconducting nanowire single-photon device, can reduce the counting interference caused by stray light and background radiation, and has high industrial utilization value.
Description
Technical Field
The invention relates to the technical field of photoelectric detection, in particular to a superconducting nanowire single photon detector.
Background
Superconducting nanowire single-photon detectors, SNSPD for short, are novel single-photon detectors, have been developed to high-performance single-photon detectors with low dark count, high response rate, wide response spectrum and high detection efficiency, play irreplaceable roles in middle and far infrared bands, and are widely applied to the advanced fields of science and technology and national defense, such as quantum key distribution, quantum computation, single-photon radar and the like.
The main working area of the superconducting nanowire single photon detector is composed of a superconducting thin film with a nano-scale thickness, such as NbN, MoSi, WSi and other superconducting thin films with a thickness of 4-8 nm. Superconducting thin films are generally prepared in the shape of meandering nanowires, analogous to one-dimensional gratings. The width of the nano-wire is different from 30nm to 150nm, even can reach the micron level. The SNSPD generally works under the low-temperature condition of lower than 4K and is externally connected with a bias current slightly smaller than the critical current Ic. When photons are absorbed by the superconducting nanowire, the cooper electron pairs are destroyed to generate a large number of quasi-particles, and a hot spot region is formed on the nanowire, so that the superconducting material on the region is converted from a superconducting state to a resistance state. Along with the gradual drift and diffusion of the quasi-particles, the superconducting current around the hot point is gradually extruded to the non-quenched area, and finally the superconducting critical current density at the position is exceeded, so that a complete resistance band is generated. Under the action of bias current, joule heat is generated in a quenched nanowire area (namely a resistance band), so that the resistance area is further enlarged, and finally, a resistance state reaching the kiloohm level is realized. Therefore, current can flow out through the radio frequency port of the detection circuit, voltage pulse is generated, and a detection signal is output. After a period of relaxation time, the quench superconducting nanowire passes through the heat dissipation process of the substrate, thermoelectrons and acoustoelectrons form a Cooper pair again, the nanowire restores the superconducting state again, and the second incident photon can be continuously detected. The SNSPD has a fast response speed due to the short thermal relaxation time of the superconducting material.
According to the working principle of the SNSPD, the detection mechanism of the superconducting nanowire single-photon detector is that the superconducting Cooper pair is damaged by utilizing the energy of photons to form a complete hot spot so as to output a response pulse. Therefore, when the energy of the photon is within the energy threshold of the superconducting nanowire response, a response pulse can be generated theoretically. Thus SNSPD does not have intrinsic wavelength resolution. For example, by introducing an optical cavity to increase optical absorption, the response spectrum of the SNSPD can be compressed to a certain extent, but the full width at half maximum of the response spectrum is still in the magnitude of 400nm, even wider, the function of filtering out stray light cannot be realized, and troubles are brought to the technologies such as single photon imaging and the like.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a self-filtering superconducting nanowire single-photon detector so as to meet the practical application requirements of the superconducting nanowire single-photon detector.
The technical scheme disclosed by the invention is as follows: a self-filtering superconductive nanowire single photon detector comprises a superconductive nanowire, wherein the shape of the superconductive nanowire is a winding grating, characterized by further comprising a dielectric substrate, a first photonic crystal serving as a reflecting layer and a second photonic crystal serving as a protecting and filtering layer, the first photonic crystal and the second photonic crystal are respectively formed by alternately laminating different periodic media, the first photonic crystal and the second photonic crystal are attached and form an F-P resonant cavity on the contact surface of the first photonic crystal and the second photonic crystal, the superconducting nanowire is embedded in the F-P resonant cavity, the other surface of the first photonic crystal is attached to the dielectric substrate, the thickness of each layer of medium of the first photonic crystal and the second photonic crystal is one fourth of the characteristic wavelength of the layer of medium, the characteristic wavelength of the layer of medium is equal to the index of refraction of the superconducting nanowire single photon detector divided by the layer of medium.
Further, the period of the alternating lamination of different mediums of the first photonic crystal and/or the second photonic crystal is 4-13.
Further, the dielectric substrate is made of silicon or silicon dioxide or sapphire or magnesium oxide or magnesium fluoride.
Further, the thickness of the dielectric substrate is 500 micrometers-1 mm.
Further, the first photonic crystal and/or the second photonic crystal are prepared by IBD, PECVD, EBE and the like.
Further, the medium of the first photonic crystal and/or the second photonic crystal comprises TiO2, SiNx, Ta2O5 or SiO2 which are alternately stacked.
Further, the superconducting nanowire is made of NbN, MoSi or WSi.
Further, the width of the superconducting nanowire is 30-150 nanometers, the period of the nanowire is 200-400 nanometers, the duty ratio is 0.3-0.6, and the thickness is 4-10 nanometers.
The invention has the following beneficial effects: the invention utilizes the resonance mode existing in the photonic crystal heterostructure to prepare the superconducting nanowire on the contact surface of the two photonic crystals, thereby realizing the strong local area of photons with specific wave bands in the system and increasing the absorption of the superconducting nanowire on the photons. The resonance mode has extremely strong wavelength selectivity, and realizes the self-band light filtering effect of the superconducting nanowire single-photon device. The response wavelength is relatively free to select, high Q value response of different wave bands can be realized by adjusting the structural parameters of the specific photonic crystal, the wavelength selection characteristic is protected by the photonic crystal, certain robustness is achieved, certain experimental preparation errors can be tolerated, the device can be used for single photon radar, quantum communication and other aspects, the influence of dark counting caused by background radiation can be further reduced while background stray light is filtered, and the industrial utilization value is high.
Drawings
FIG. 1 is a diagram of the detector structure of the present invention;
FIG. 2 is a graph showing simulation results of a rigorous coupled wave in the 1550nm communication band in example 1;
FIG. 3 is a graph showing simulation results of a rigorous coupled wave in the 1064nm communication band in example 2;
FIG. 4 is a graph showing the simulation results of the rigorous coupled wave in the 1550nm communication band in example 3.
Reference numerals: 1 is a dielectric substrate, 2 is a first photonic crystal I, 3 is a superconducting nanowire, and 4 is a second photonic crystal.
Detailed Description
The invention is further described below with reference to the accompanying drawings and examples.
The invention aims to provide a design of a high-Q-value SNSPD optimized by photonic crystal heterojunction, so that the SNSPD has high response efficiency and a light filtering effect. As shown in fig. 1, the self-filtering superconducting nanowire single photon detector of the invention comprises a dielectric substrate 1, a first photonic crystal 2, a superconducting nanowire 3 and a second photonic crystal 4 from bottom to top in sequence. Wherein the first photonic crystal 2 is prepared on the upper surface of the dielectric substrate 1 and is used as a reflecting layer. The second photonic crystal 4 is used as a protective layer and a filter layer, is attached to the first photonic crystal 2 and forms an F-P resonant cavity at the contact surface of the two. The superconducting nanowire 3 is embedded in the F-P resonant cavity. The incident light is normally incident from above.
The first photonic crystal 2 and the second photonic crystal 4 are respectively formed by alternately laminating different periodic media, and can be prepared by ion beam assisted sputtering deposition (IBD), Electron Beam Evaporation (EBE), Plasma Enhanced Chemical Vapor Deposition (PECVD) and other processes. The different medium comprises TiO2 or SiNx or Ta2O5 or SiO2, for example, the first photonic crystal 2 can be Ta 2 O 5 With SiO 2 Periodically alternately laminated, and the second photonic crystal 4 may be SiN x With SiO 2 And are alternately stacked periodically. The period of the alternate stacking is adjustable to vary the quality factor of the SNSPD to respond to the full width at half maximum of the spectrum, which is typically 4 to 13, preferably 6 or 13. The thickness of each layer of medium of the first photonic crystal 2 and the second photonic crystal is one fourth of the characteristic wavelength of the layer of medium, and the characteristic wavelength of the layer of medium is equal to the refractive index of the superconducting nanowire single photon detector divided by the layer of medium. Therefore, the response wave band of the detector to light can be adjusted by adjusting the layer thickness of each layer of medium and the period of the photonic crystal, namely, the self-filtering effect is realized, so that the SNSPD device with high Q value from visible light to middle and far infrared wave bands can be freely designed. Moreover, the first photonic crystal 2 and the second photonic crystal 4 with the structures have the reflectivity close to 1 in the resonance wave band, and can achieve higher nanowire absorptivity compared with a metal reflector adopted by a common SNSPD (single quantum well detector-induced grating) device。
The dielectric substrate 1 can be made of silicon, silicon dioxide, sapphire, magnesium oxide or magnesium fluoride, and the thickness is preferably 500 micrometers-1 mm. The superconducting nanowire 3 may be made of NbN, MoSi or WSi, and has a meandering grating shape. The geometrical structure of the superconducting nanowire 3, such as the period, width, thickness and duty ratio of the structure of the nanowire, can be set according to actual conditions to make up for impedance mismatch of an interface caused by the introduction of the nanowire and enhance the high-Q-value response of the detector to specific wavelengths. In practice, the width of the superconducting nanowire 3 is recommended to be 30-200 nanometers, the period of the nanowire is recommended to be 200-400 nanometers, the thickness is recommended to be 4-10 nanometers, and the duty ratio is recommended to be 0.3-0.6, and preferably 0.5.
Example 1
The material of the dielectric substrate 1 of the present embodiment is a silicon substrate with a thickness of 500 μm. The superconducting nanowire 3 is made of NbN, the nanowire period is 160 nanometers, the duty ratio is 0.4, and the nanowire width is 70 nanometers. Ta of the first photonic crystal 2 2 O 5 Layer thickness 186 nm, SiO 2 The layer thickness was 268 nm and the alternate stacking period N1 was taken to be 13. SiN of the second photonic crystal 4 x Layer thickness 221 nm, SiO 2 The layer thickness was 268 nm and the alternate stacking period N2 was taken to be 6.
The simulation result of the strict coupled wave of the detector of the embodiment is shown in fig. 2, for NbN as a superconducting material, at a 1550nm communication band, the half-width height of the response spectrum is 14nm, the absorption rate is 99.9%, and the Q value can reach 110. In the figure, the solid line represents the detector value of the present embodiment, and the broken line represents the detector value of the general structure for comparison.
Example 2
The material of the dielectric substrate 1 of the present embodiment is Si. The superconducting nanowire 3 is made of NbN, the nanowire period is 160 nanometers, the duty ratio is 0.4, and the nanowire width is 70 nanometers. Ta of the first photonic crystal 2 2 O 5 Layer thickness of 127 nm, SiO 2 The layer thickness was 184 nm and the alternate stacking period N1 was taken to be 13. SiN of the second photonic crystal 2 x Layer thickness 151 nm, SiO 2 The layer thickness was 183 nm and the alternate stacking period N2 was taken to be 4.
The simulation result of the spectrum response strict coupling wave of the detector of the embodiment is shown in fig. 3, for NbN as a superconducting material, the half-width height of the response spectrum is 19nm in a 1064nm communication waveband, the absorption rate can reach 99.0%, and the Q value can reach 56.
Example 3
The material of the dielectric substrate 1 of the present embodiment is Si. The superconducting nanowire 3 is made of MoSi, the nanowire period is 160 nanometers, the duty ratio is 0.4, and the nanowire width is 70 nanometers. Ta of the first photonic crystal 2 2 O 5 Layer thickness 186 nm, SiO 2 The layer thickness was 268 nm, and the alternate stacking period N1 was taken to be 13. SiN of the second photonic crystal 4 x Layer thickness 221 nm, SiO 2 The layer thickness was 268 nm and the alternate stacking period N2 was taken to be 6.
The simulation result of the strict coupling wave of the detector of the embodiment is shown in fig. 4, and for MoSi as a superconducting material, the half-width height of the response spectrum is 15nm at a 1550nm communication waveband, the absorption rate can reach 99.8%, and the Q value can reach 103.
The above description is only a preferred embodiment of the present invention, and should not be construed as limiting the scope of the present invention. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (8)
1. A self-filtering superconductive nanowire single photon detector comprises a superconductive nanowire which is in a winding grating shape, characterized by further comprising a dielectric substrate, a first photonic crystal serving as a reflecting layer and a second photonic crystal serving as a protecting and filtering layer, the first photonic crystal and the second photonic crystal are respectively formed by alternately laminating different periodic media, the first photonic crystal and the second photonic crystal are attached and form an F-P resonant cavity on the contact surface of the first photonic crystal and the second photonic crystal, the superconducting nanowire is embedded in the F-P resonant cavity, the other surface of the first photonic crystal is attached to the dielectric substrate, the thickness of each layer of medium of the first photonic crystal and the second photonic crystal is one fourth of the characteristic wavelength of the layer of medium, the characteristic wavelength of the layer of medium is equal to the index of refraction of the superconducting nanowire single photon detector divided by the layer of medium.
2. The self-filtering superconducting nanowire single photon detector of claim 1, wherein the period of the alternate stacking of the different media of the first photonic crystal and/or the second photonic crystal is 4-13.
3. The self-filtering superconducting nanowire single photon detector of claim 1, wherein the dielectric substrate is made of silicon or silicon dioxide or sapphire or magnesium oxide or magnesium fluoride.
4. The self-filtering superconducting nanowire single photon detector of claim 3, wherein the thickness of the dielectric substrate is 500 microns to 1 mm.
5. The self-filtering superconducting nanowire single photon detector of claim 1, wherein the first and/or second photonic crystals are fabricated using IBD, PECVD, EBE, or the like.
6. The self-filtering superconducting nanowire single photon detector of claim 1, wherein the medium of the first and/or second photonic crystals comprises TiO2, SiNx, Ta2O5 or SiO2 in an alternating stack.
7. The self-filtering superconducting nanowire single photon detector of claim 1, wherein the superconducting nanowire is made of NbN, MoSi or WSi.
8. The self-filtering superconducting nanowire single photon detector as claimed in claim 1, wherein the width of the superconducting nanowire is 30-150 nm, the period of the nanowire is 200-400 nm, the duty ratio is 0.3-0.6, and the thickness is 4-10 nm.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116067543A (en) * | 2022-11-08 | 2023-05-05 | 湖北科技学院 | Static pressure sensor based on superconducting material and defect photonic crystal |
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| CN108666388A (en) * | 2017-03-31 | 2018-10-16 | 中国科学院上海微系统与信息技术研究所 | The superconducting nano-wire single-photon detector of integrated optics film filter |
| CN109031519A (en) * | 2018-07-28 | 2018-12-18 | 中国地质大学（北京） | A kind of narrow-band optical filter and all-optical diode |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20050018331A1 (en) * | 2001-11-16 | 2005-01-27 | Christophe Pautet | Tunable optical filtering component |
| CN103840035A (en) * | 2014-03-20 | 2014-06-04 | 中国科学院上海微系统与信息技术研究所 | Method and device for reducing non-intrinsic dark counts of nanowire single photon detector |
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| CN108666388A (en) * | 2017-03-31 | 2018-10-16 | 中国科学院上海微系统与信息技术研究所 | The superconducting nano-wire single-photon detector of integrated optics film filter |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116067543A (en) * | 2022-11-08 | 2023-05-05 | 湖北科技学院 | Static pressure sensor based on superconducting material and defect photonic crystal |
| CN116067543B (en) * | 2022-11-08 | 2023-12-05 | 湖北科技学院 | Static pressure sensor based on superconducting material and defect photonic crystal |
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