CN108666388A - The superconducting nano-wire single-photon detector of integrated optics film filter - Google Patents
The superconducting nano-wire single-photon detector of integrated optics film filter Download PDFInfo
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- CN108666388A CN108666388A CN201710207615.5A CN201710207615A CN108666388A CN 108666388 A CN108666388 A CN 108666388A CN 201710207615 A CN201710207615 A CN 201710207615A CN 108666388 A CN108666388 A CN 108666388A
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- 229910052710 silicon Inorganic materials 0.000 claims description 4
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
Abstract
The present invention provides a kind of superconducting nano-wire single-photon detector of integrated optics film filter, including：Substrate；Speculum is located at the substrate surface；Superconducting nano-wire is located at the surface of the speculum；Optical thin film filter is located at side of the superconducting nano-wire far from the speculum, and has spacing with the superconducting nano-wire.Light can be directly coupled on superconducting nano-wire by the present invention by the way that the speculum is arranged below superconducting nano-wire, can be had higher absorption efficiency to target wavelength, be effectively increased device detection efficient；Meanwhile the present invention is by being arranged optical thin film filter, it can be to non-targeted wavelength filtering, and then effectively inhibit dark counting caused by black body radiation；In addition, the optical thin film filter and other structures of the integrated optics film filter of the present invention are separately positioned, and it is reusable, to reduce cost.
Description
Technical field
The invention belongs to optical detector technology fields, are related to a kind of superconducting nano-wire single-photon detector, more particularly to one
The superconducting nano-wire single-photon detector of kind integrated optics film filter.
Background technology
Superconducting nano-wire single-photon detectors (Superconducting Nanowire Single Photon
Detector, SNSPD) it is the novel single-photon detectors that developed recently gets up, visible light may be implemented near infrared band
Efficient single photon detection.Due to the advantages such as its high-quantum efficiency, low dark counting, high detection rate, low time jitter, SNSPD
Be applied to rapidly quantum information technology, laser communication, star in the applications such as ranging, bioluminescence detection, Depth Imaging.
SNSPD mainly uses low-temperature superconducting ultrathin film material, such as NbN, Nb, NbTiN, WSi etc..Typical thickness is about
The meandered nanowire structure of 5-10nm, device generally use 100nm or so width.Be placed in low temperature environment when SNSPD work (<
4K), device is in superconducting state, and is subject to certain bias current Ib, Ib and is slightly less than device critical current Ic.When single photon enters
When being mapped on the Nano-structure in device, Cooper pair can be broken, forms a large amount of thermoelectron, to form local hot spot, hot spot
Since Joule heat is diffused under the action of bias current Ib, finally so that Nano-structure, which locally quenches, is formed with resistance area.It
Thermionic energy transmits simultaneously relaxation by electric phonon interaction afterwards, then is paired into the Cooper pair of superconducting state again.Due to superconduction
The thermal relaxation time of material is very short, therefore after SNSPD receives single photon, will generate one quickly at device both ends
Electric impulse signal, to realize the detecting function of single photon.
Dark counting is one of major parameter of single-photon detector.It refers to the error count unrelated with signal photon.
The source of SNSPD dark countings includes two aspects.One is dark counting caused by the movement of SNSPD nano wire Vortexes, this portion
Divide and is referred to as intrinsic dark counting.Intrinsic dark counting is related with device operation current, only in operating current very close to critical current
When just generate, and counting rate and bias current have exponent relation.The SNSPD countings of other non-signal photon triggerings are referred to collectively as non-
Levy dark counting.Including following possibility：(1) dark counting that the heat radiation of fiber optic materials itself introduces；(2) SNSPD is working
When, the various light of working environment (heat) radiation has enters optical fiber as stray light triggering SNSPD meters through optical fiber clad on a small quantity
Number.Extrinsic dark counting can be equivalent to a certain amount of photon radiation, and the detection efficient of the dark counting and detector that introduce is at just
Than.Dark counting is for many single photon detections using most important.For long-distance optical fiber quantum communications, dark count
Several levels is to determine it at code signal-to-noise ratio and the key parameter of communication distance.Do not solve intrinsic dark count at all still at present
Several effective ways, generally use reduce the means of SNSPD bias currents.Under these conditions, extrinsic dark counting just plays
Conclusive influence.Japanese Shibata et al. proposes the method for introducing optical fiber filter under low temperature in a fiber, Ke Yiyou
The extrinsic dark counting of reduction of effect.But apparent decaying (about 3dB) also is produced to signal light simultaneously, directly affect device
Detection efficient.
Also there are other filtering modes at present, but all have device design requirement excessively complicated, to be unfavorable for filter
Realization and the shortcomings that cost reduction.
Invention content
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of integrated optics film filters
Superconducting nano-wire single-photon detector, for solve in the prior art superconducting nano-wire single-photon detector absorption efficiency it is low,
Led to problems such as due to dark counting superconducting nano-wire single-photon detector performance decline and it is complicated, cost is higher.
In order to achieve the above objects and other related objects, the present invention provides a kind of superconduction of integrated optics film filter and receives
Rice noodles single-photon detector, including：
Substrate；
Speculum is located at the substrate surface；
Superconducting nano-wire is located at the surface of the speculum；
Optical thin film filter is located at side of the superconducting nano-wire far from the speculum, and is received with the superconduction
Rice noodles have spacing.
A kind of preferred embodiment of the superconducting nano-wire single-photon detector of integrated optics film filter as the present invention,
The speculum includes alternately stacked SiO2Film layer and Si film layers, alternately stacked SiO2Film layer and TiO2Film layer,
Alternately stacked SiO2Film layer and Ta2O5Film layer, Au film layers, Ag film layers or Al film layers.
A kind of preferred embodiment of the superconducting nano-wire single-photon detector of integrated optics film filter as the present invention,
In the speculum, the thickness of each film layer be equal to incident light in this layer effective wavelength 1/4.
A kind of preferred embodiment of the superconducting nano-wire single-photon detector of integrated optics film filter as the present invention,
The optical thin film filter includes alternately stacked SiO2Film layer and Si film layers, alternately stacked SiO2Film layer with
TiO2Film layer or alternately stacked SiO2Film layer and Ta2O5Film layer.
A kind of preferred embodiment of the superconducting nano-wire single-photon detector of integrated optics film filter as the present invention,
Film layer in the optical thin film filter and the film layer in the speculum are not exactly the same.
A kind of preferred embodiment of the superconducting nano-wire single-photon detector of integrated optics film filter as the present invention,
The material of the superconducting nano-wire includes NbN, Nb, TaN, NbTiN or WSi.
A kind of preferred embodiment of the superconducting nano-wire single-photon detector of integrated optics film filter as the present invention,
The superconducting nano-wire is zigzag shape.
A kind of preferred embodiment of the superconducting nano-wire single-photon detector of integrated optics film filter as the present invention,
The width of the superconducting nano-wire is 50~150 nanometers.
A kind of preferred embodiment of the superconducting nano-wire single-photon detector of integrated optics film filter as the present invention,
The thickness of the superconducting nano-wire is 5~10 nanometers.
A kind of preferred embodiment of the superconducting nano-wire single-photon detector of integrated optics film filter as the present invention,
The substrate includes silicon substrate, MgO substrates or Sapphire Substrate.
A kind of preferred embodiment of the superconducting nano-wire single-photon detector of integrated optics film filter as the present invention,
The superconducting nano-wire single-photon detector of the integrated optics film filter further includes optical fiber MU heads, and described optical fiber MU are located at
Side of the optical thin film filter far from the superconducting nano-wire, and the optical thin film filter adheres on the optical fiber
On MU end faces.
A kind of preferred embodiment of the superconducting nano-wire single-photon detector of integrated optics film filter as the present invention,
The superconducting nano-wire single-photon detector of the integrated optics film filter further includes package main body, the substrate, described anti-
Penetrate mirror, the superconducting nano-wire, the optical thin film filter and described optical fiber MU are packaged in the package main body.
As described above, the present invention provides a kind of superconducting nano-wire single-photon detector of integrated optics film filter, institute
The superconducting nano-wire single-photon detector for stating integrated optics film filter includes：Substrate；Speculum is located at the substrate table
Face；Superconducting nano-wire is located at the surface of the speculum；Optical thin film filter is located at the superconducting nano-wire far from described
The side of speculum, and there is spacing with the superconducting nano-wire.The superconducting nano of the integrated optics film filter of the present invention
Light can be directly coupled to superconducting nano-wire by line single-photon detector by the way that the speculum is arranged below superconducting nano-wire
On, there can be higher absorption efficiency to target wavelength, effectively increase device detection efficient；Meanwhile it is of the invention integrated
The superconducting nano-wire single-photon detector of optical thin film filter, can be to non-targeted wavelength by the way that optical thin film filter is arranged
Filtering, and then effectively inhibit dark counting caused by black body radiation；In addition, the integrated optics film filter of the present invention is optically thin
Film filter is separately positioned with other structures, reusable, to reduce cost.
Description of the drawings
Fig. 1 is shown as the superconducting nano-wire single-photon detecting of the integrated optics film filter provided in the embodiment of the present invention 1
Survey the structural schematic diagram of device.
Fig. 2 is shown as the superconducting nano-wire single-photon detecting of the integrated optics film filter provided in the embodiment of the present invention 1
Survey the detection efficient figure of device.
Fig. 3 is shown as the superconducting nano-wire single-photon detecting of the integrated optics film filter provided in the embodiment of the present invention 2
Survey the structural schematic diagram of device.
Fig. 4 is shown as the superconducting nano-wire single-photon detecting of the integrated optics film filter provided in the embodiment of the present invention 3
Survey the structural schematic diagram of device.
Fig. 5 is shown as the superconducting nano-wire single-photon detecting of the integrated optics film filter provided in the embodiment of the present invention 4
Survey the structural schematic diagram of device.
Fig. 6 is shown as the superconducting nano-wire single-photon detecting of the integrated optics film filter provided in the embodiment of the present invention 5
Survey the structural schematic diagram of device.
Fig. 7 is shown as the superconducting nano-wire single-photon detecting of the integrated optics film filter provided in the embodiment of the present invention 6
Survey the structural schematic diagram of device.
Component label instructions
10 substrates
11 speculums
111 SiO2Film layer
112 Si film layers
113 TiO2Film layer
114 Ta2O5Film layer
12 superconducting nano-wires
13 optical thin film filters
14 optical fiber MU heads
Specific implementation mode
Illustrate that embodiments of the present invention, those skilled in the art can be by this specification below by way of specific specific example
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Please refer to Fig.1~Fig. 7.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, though package count when only display is with related component in the present invention rather than according to actual implementation in diagram
Mesh, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can be a kind of random change, and its
Assembly layout kenel may also be increasingly complex.
Embodiment 1
As shown in Figure 1, the present embodiment provides a kind of superconducting nano-wire single-photon detector of integrated optics film filter,
The superconducting nano-wire single-photon detector of the integrated optics film filter includes：Substrate 10；Speculum 11, the speculum
11 are located at 10 surface of the substrate；Superconducting nano-wire 12, the superconducting nano-wire 12 are located at the surface of the speculum 11；Optics
Film filter 13, the optical thin film filter 13 are located at side of the superconducting nano-wire 12 far from the speculum 11,
And with the superconducting nano-wire 12 there is spacing, i.e., the described optical thin film filter 13 to be located at the substrate by being sequentially stacked
10, the stacked structure that the speculum 11 and the superconducting nano-wire 12 form is equipped with the one of the end face of the superconducting nano-wire 12
Side, and the optical thin film filter 13 has certain spacing with the stacked structure, also that is, the optical thin film filter
13 stacked structures formed with the substrate 10, the speculum 11 and the superconducting nano-wire 12 being sequentially stacked are two only
Vertical separated structure.
As an example, the substrate 10 includes silicon substrate, MgO substrates or Sapphire Substrate, the thickness of the substrate 10 is
300~500 microns.In the present embodiment, the substrate 10 is silicon substrate, and thickness is 400 microns.Certainly, other kinds of
Substrate 10 or thickness may also be suitable for the present invention, therefore, several examples that place enumerates that it's not limited to that.
As an example, as shown in Figure 1, in the present embodiment, the speculum 11 is alternately stacked SiO2Film layer 111 with
Si film layers 112.The speculum 11 can be the SiO2Film layer 111 is located at the surface of the substrate 10, and the Si is thin
Film layer 112 is located at the SiO2The top of film layer 111；Or the Si film layers 112 are located at the table of the substrate 10
Face, the SiO2Film layer 111 is located at the top of the Si film layers 112.In the speculum 11, the film layer that is alternately superimposed on
The number of plies can be set according to actual needs, in the present embodiment, the film layer being alternately superimposed in the speculum 11
The number of plies be 26 layers, i.e., the described speculum 11 includes 13 layers of SiO being alternately superimposed on successively2Described in film layer 111 and 13 layers
Si film layers 112.
As an example, in the speculum 11, the thickness of each film layer is equal to incident light effective wavelength in this layer
1/4。
The speculum 11 is set below the superconducting nano-wire 12, light can be directly coupled to the superconducting nano
On line 12, there is higher absorption efficiency to target wavelength, effectively increase the detection efficient of detector, Integrated Light of the invention
The detection efficient of the superconducting nano-wire single-photon detector of film filter is learned as shown in Fig. 2, as shown in Figure 2, collection of the invention
There is higher single photon detection efficiency in narrow bandwidth range at the superconducting nano-wire single-photon detector of optical thin film filter.
As an example, the superconducting nano-wire 12 is zigzag shape；Certainly, in other examples, the superconduction is received
Rice noodles 12 or linear structure.The material of the superconducting nano-wire 12 includes NbN, Nb, TaN, NbTiN or WSi.It is described
The width of superconducting nano-wire 12 can be 50 nanometers~150 nanometers, and the thickness of the superconducting nano-wire 12 can be 5 nanometers~10
Nanometer.Preferably, in the present embodiment, the material of the superconducting nano-wire 12 is NbN, and width is 100 nanometers, and thickness is received for 7
Rice, period are 200 nanometers, also, the superconducting nano-wire 12 is in zigzag structure.Certainly, in other embodiments, institute
State the material of superconducting nano-wire 12, size and shape can be changed according to actual demand, however it is not limited to recited herein
Situation.
As an example, can with as shown in Figure 1, the optical thin film filter 13 be alternately stacked SiO2Film layer 111
With TiO2Film layer 113.The optical thin film filter 13 can be the TiO2Film layer 113 is close to the superconducting nano-wire
12, the SiO2Film layer 111 is located at the TiO2The top of film layer 113；May be the SiO2Film layer 111 is close
The superconducting nano-wire 12, the TiO2Film layer 113 is located at the SiO2The top of film layer 111.The optical thin film filtering
In device 13, the number of plies for the film layer being alternately superimposed on can be set according to actual needs, in the present embodiment, described optically thin
The number of plies of the film layer being alternately superimposed in film filter 13 is 13 layers, i.e., the described optical thin film filter 13 includes replacing successively
13 layers of stacked SiO2Film layer 111 and 13 layers of TiO2Film layer 113.
As an example, the superconducting nano-wire single-photon detector of the integrated optics film filter further includes optical fiber MU heads
14, the optical fiber MU heads 14 are located at side of the optical thin film filter 13 far from the superconducting nano-wire 12, and the light
Film filter 13 is learned to adhere on the end face of the optical fiber MU heads 14.
As an example, the superconducting nano-wire single-photon detector of the integrated optics film filter further includes package main body
(not shown), the substrate 10, the speculum 11, the superconducting nano-wire 12, the optical thin film filter 13 and described
Optical fiber MU heads 14 are packaged in the package main body.
In the present invention, the optical texture of the superconducting nano-wire single-photon detector of the integrated optics film filter is divided into
Two main functional parts：First part is 11 part of the speculum, is located at the lower section of the superconducting nano-wire 12, plays light
The effect for learning cavity, increases the optical absorption of the superconducting nano-wire 12, to improve the detection efficient of detector；Second part is
The optical thin film filter 13, the optical thin film filter 13 is located at 12 top of the superconducting nano-wire, to non-targeted wave
Long filtering, and then effectively inhibit dark counting caused by black body radiation；Meanwhile 13 present invention's of optical thin film filter is integrated
The superconducting nano-wire single-photon detector of optical thin film filter and the substrate 10, the speculum 11 and the institute being sequentially stacked
The stacked structure for stating the composition of superconducting nano-wire 12 is separately positioned, reusable, to reduce cost.
Embodiment 2
As shown in figure 3, the present embodiment also provides a kind of superconducting nano-wire single photon detection of integrated optics film filter
Device, basic structure such as 1 base of embodiment of the superconducting nano-wire single-photon detector of integrated optics film filter in the present embodiment
This is identical, the two difference lies in：Optical thin film filter 13 described in embodiment 1 is alternately stacked SiO2Film layer 111
With TiO2Film layer 113；And optical thin film filter 13 described in the present embodiment is alternately stacked SiO2Film layer 111 with
Ta2O5Film layer 114.The optical thin film filter 13 can be the SiO2Film layer 111 is close to the superconducting nano-wire
12, the Ta2O5Film layer 114 is located at the SiO2The top of film layer 111, as shown in Figure 3；May be the Ta2O5It is thin
Film layer 114 is close to the superconducting nano-wire 12, the SiO2Film layer 111 is located at the Ta2O5The top of film layer 114.
Embodiment 3
As shown in figure 4, the present embodiment provides a kind of superconducting nano-wire single-photon detector of integrated optics film filter,
The basic structure of the superconducting nano-wire single-photon detector of integrated optics film filter such as 1 basic phase of embodiment in the present embodiment
Together, the two difference lies in：Speculum 11 described in embodiment 1 is alternately stacked SiO2Film layer 111 and Si film layers
112, and speculum 11 described in the present embodiment is alternately stacked SiO2Film layer 111 and TiO2Film layer 113；In embodiment 1
The optical thin film filter 13 is alternately stacked SiO2Film layer 111 and TiO2Film layer 113；And described in the present embodiment
Optical thin film filter 13 is alternately stacked SiO2Film layer 111 and Si film layers 112.The speculum 11 can be described
SiO2Film layer 111 is located at the surface of the substrate 10, the TiO2Film layer 113 is located at the SiO2Film layer 111 it is upper
Side, as shown in Figure 4；May be the TiO2Film layer 113 is located at the surface of the substrate 10, the SiO2Film layer 111
In the TiO2The top of film layer 113.The optical thin film filter 13 can be the SiO2Film layer 111 is close to described
Superconducting nano-wire 12, the Si film layers 112 are located at the SiO2The top of film layer 111；May be the Si film layers
112 close to the superconducting nano-wire 12, the SiO2Film layer 111 is located at the top of the Si film layers 112, as shown in Figure 4.
Embodiment 4
As shown in figure 5, the present embodiment also provides a kind of superconducting nano-wire single photon detection of integrated optics film filter
Device, basic structure such as 3 base of embodiment of the superconducting nano-wire single-photon detector of integrated optics film filter in the present embodiment
This is identical, the two difference lies in：Optical thin film filter 13 described in embodiment 3 is alternately stacked SiO2Film layer 111
With Si film layers 112；And optical thin film filter 13 described in the present embodiment is alternately stacked SiO2Film layer 111 and Ta2O5
Film layer 114.The optical thin film filter 13 can be the SiO2Film layer 111 is close to the superconducting nano-wire 12, institute
State Ta2O5Film layer 114 is located at the SiO2The top of film layer 111；Or the Ta as shown in Figure 52O5Film layer 114
Close to the superconducting nano-wire 12, the SiO2Film layer 111 is located at the Ta2O5The top of film layer 114.
Embodiment 5
As shown in fig. 6, the present embodiment also provides a kind of superconducting nano-wire single photon detection of integrated optics film filter
Device, basic structure such as 3 base of embodiment of the superconducting nano-wire single-photon detector of integrated optics film filter in the present embodiment
This is identical, the two difference lies in：Speculum 11 described in embodiment 3 is alternately stacked SiO2Film layer 111 and TiO2Film
Layer 113；And speculum 11 described in the present embodiment is alternately stacked SiO2Film layer 111 and Ta2O5Film layer 114.It is described anti-
It can be the SiO to penetrate mirror 112Film layer 111 is located at the surface of the substrate 10, the Ta2O5Film layer 114 is located at described
SiO2The top of film layer 111, as shown in Figure 6；May be the Ta2O5Film layer 114 is located at the surface of the substrate 10,
The SiO2Film layer 111 is located at the Ta2O5The top of film layer 114.
Embodiment 6
As shown in fig. 7, the present embodiment also provides a kind of superconducting nano-wire single photon detection of integrated optics film filter
Device, basic structure such as 5 base of embodiment of the superconducting nano-wire single-photon detector of integrated optics film filter in the present embodiment
This is identical, the two difference lies in：Optical thin film filter 13 described in embodiment 5 is alternately stacked SiO2Film layer 111
With Si film layers 112；And optical thin film filter 13 described in the present embodiment is alternately stacked SiO2Film layer 111 and TiO2
Film layer 113.The optical thin film filter 13 can be the SiO2Film layer 111 is close to the superconducting nano-wire 12, institute
State TiO2Film layer 113 is located at the SiO2The top of film layer 111；Or as shown in fig. 7, the TiO2Film layer 113
Close to the superconducting nano-wire 12, the SiO2Film layer 111 is located at the TiO2The top of film layer 113.
As described above, the present invention provides a kind of superconducting nano-wire single-photon detector of integrated optics film filter, packet
It includes：Substrate；Speculum is located at the substrate surface；Superconducting nano-wire is located at the surface of the speculum；Optical thin film filters
Device is located at side of the superconducting nano-wire far from the speculum, and has spacing with the superconducting nano-wire.The present invention's
The superconducting nano-wire single-photon detector of integrated optics film filter by the way that the speculum is arranged below superconducting nano-wire,
Light can be directly coupled on superconducting nano-wire, there can be higher absorption efficiency to target wavelength, effectively increase device
Part detection efficient；Meanwhile the superconducting nano-wire single-photon detector of integrated optics film filter of the invention is by being arranged light
Film filter is learned, can be to non-targeted wavelength filtering, and then effectively inhibit dark counting caused by black body radiation；In addition, this hair
The optical thin film filter and other structures of bright integrated optics film filter are separately positioned, reusable, to reduce
Cost.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology can all carry out modifications and changes to above-described embodiment without violating the spirit and scope of the present invention.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should by the present invention claim be covered.
Claims (12)
1. a kind of superconducting nano-wire single-photon detector of integrated optics film filter, which is characterized in that including：
Substrate；
Speculum is located at the substrate surface；
Superconducting nano-wire is located at the surface of the speculum；
Optical thin film filter, be located at side of the superconducting nano-wire far from the speculum, and with the superconducting nano-wire
With spacing.
2. the superconducting nano-wire single-photon detector of integrated optics film filter according to claim 1, feature exist
In：The speculum includes alternately stacked SiO2Film layer and Si film layers, alternately stacked SiO2Film layer and TiO2Film
Layer, alternately stacked SiO2Film layer and Ta2O5Film layer, Au film layers, Ag film layers or Al film layers.
3. the superconducting nano-wire single-photon detector of integrated optics film filter according to claim 2, feature exist
In：In the speculum, the thickness of each film layer be equal to incident light in this layer effective wavelength 1/4.
4. the superconducting nano-wire single-photon detector of integrated optics film filter according to claim 1, feature exist
In：The optical thin film filter includes alternately stacked SiO2Film layer and Si film layers, alternately stacked SiO2Film layer with
TiO2Film layer or alternately stacked SiO2Film layer and Ta2O5Film layer.
5. the superconducting nano-wire single-photon detector of integrated optics film filter according to claim 4, feature exist
In：Film layer in the optical thin film filter and the film layer in the speculum are not exactly the same.
6. the superconducting nano-wire single-photon detector of integrated optics film filter according to claim 1, feature exist
In：The material of the superconducting nano-wire includes NbN, Nb, TaN, NbTiN or WSi.
7. the superconducting nano-wire single-photon detector of integrated optics film filter according to claim 1, feature exist
In：The superconducting nano-wire is zigzag shape.
8. the superconducting nano-wire single-photon detector of integrated optics film filter according to claim 1, feature exist
In：The width of the superconducting nano-wire is 50~150 nanometers.
9. the superconducting nano-wire single-photon detector of integrated optics film filter according to claim 1, feature exist
In：The thickness of the superconducting nano-wire is 5~10 nanometers.
10. the superconducting nano-wire single-photon detector of integrated optics film filter according to claim 1, feature exist
In：The substrate includes silicon substrate, MgO substrates or Sapphire Substrate.
11. the superconducting nano-wire single-photon detecting of integrated optics film filter according to any one of claim 1 to 10
Survey device, it is characterised in that：Further include optical fiber MU heads, described optical fiber MU are located at the optical thin film filter far from the superconduction
The side of nano wire, and the optical thin film filter adheres on the optical fiber MU end faces.
12. the superconducting nano-wire single-photon detector of integrated optics film filter according to claim 10, feature
It is：Further include package main body, the substrate, the speculum, the superconducting nano-wire, the optical thin film filter and institute
Optical fiber MU is stated to be packaged in the package main body.
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