CN106549097B - Inhibit the superconducting nano-wire single-photon detector of polarization sensitivity - Google Patents
Inhibit the superconducting nano-wire single-photon detector of polarization sensitivity Download PDFInfo
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
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Abstract
The present invention provides a kind of superconducting nano-wire single-photon detector for inhibiting polarization sensitivity, comprising: substrate；High-reflecting film is located at the substrate surface；Superconducting nano-wire is located at the high-reflecting film surface；Dielectric layer is located at the high-reflecting film surface, and coats the superconducting nano-wire.The processing on high-reflecting film of the superconducting nano-wire single-photon detector of inhibition polarization sensitivity of the invention prepares superconducting nano-wire, the device architecture can be shone directly into light on superconducting nano-wire by positive optical coupling, can be to avoid the focusing of optical cavity structure medium and long distance the problem of, and then avoid influence of the substrate Fabry-Perot cavity to absorption efficiency, and to target wavelength absorption efficiency with higher, device detection efficient is effectively increased；Meanwhile the superconducting nano-wire single-photon detector of inhibition polarization sensitivity of the invention coats the high refractive index medium layer of superconducting nano-wire by growing on high-reflecting film surface, can reduce the polarization correlated of device.
Description
Technical field
The invention belongs to optical detector technology fields, are related to a kind of superconducting nano-wire single-photon detector, more particularly to one
Kind inhibits the superconducting nano-wire single-photon detector of polarization sensitivity.
Background technique
Superconducting nano-wire single-photon detectors (Superconducting Nanowire Single Photon
Detector, SNSPD) it is the novel single-photon detectors that developed recently gets up, visible light may be implemented near infrared band
Efficient single photon detection.Due to the advantages such as its high-quantum efficiency, low dark counting, high detection rate, low time jitter, SNSPD
Be applied to rapidly quantum information technology, laser communication, star during ranging, bioluminescence detection, Depth Imaging etc. apply.
SNSPD mainly uses low-temperature superconducting ultrathin film material, such as NbN, Nb, NbTiN, WSi etc..Typical thickness is about
5-10nm, device generally use the meandered nanowire structure of 100nm or so width.Be placed in low temperature environment when SNSPD work (<
4K), device is in superconducting state, and is subject to certain bias current Ib, Ib and is slightly less than device critical current Ic.When single photon enters
When being mapped on the Nano-structure in device, Cooper pair can be broken, forms a large amount of thermoelectron, to form local hot spot, hot spot
Since Joule heat is diffused under the action of bias current Ib, quenches Nano-structure locally and be formed with resistance area.It
Thermionic energy passes through electric phonon interaction transmitting and relaxation afterwards, then is paired into the Cooper pair of superconducting state again.Due to superconduction
The thermal relaxation time of material is very short, therefore after SNSPD receives single photon, will generate one quickly at device both ends
Electric impulse signal, to realize the detecting function of single photon.
A kind of superconducting nano-wire single-photon detectors structure of existing positive incidence structure is as shown in Figure 1 comprising
Substrate 12, the superconducting nano positioned at the silicon dioxide layer 11 on 10 surface of substrate and positioned at 11 surface of silicon dioxide layer
The structure of line 14, this structure is simple, but has lower efficiency of light absorption, and the Fabry-Perot of the substrate 10
(Fabry-Perot) chamber can have certain influence to absorption efficiency.
A kind of superconducting nano-wire single-photon detectors structure of existing back surface incident structure is as shown in Figure 2 comprising
Substrate 10, optical cavity structure 12, superconducting nano-wire 14 and reflecting mirror 15 positioned at 10 surface of substrate, wherein described
Optical cavity structure 12 includes silicon dioxide layer 11 and one silica layer 13.This structure absorption efficiency with higher, but still
The coupling loss that the back side is so arrived in face of device, need to solve back light to NbN nano wire remote (10 thickness of the substrate
Degree) focus issues, moreover, the substrate 10Fabry-Perot chamber can have certain influence to absorption efficiency.
Meanwhile the superconducting nano-wire single-photon detector of above two structure all has higher polarization sensitivity, in order to
Reduce the polarization sensitivity of detector, in the prior art usually by the superconducting nano-wire single-photon detector be arranged to it is vertical and
Equality double structure SNSPD, helical structure SNSPD or bilayer SNSPD structure.Superconducting nano-wire in above-mentioned three kinds of SNSPD has
Certain symmetry can reduce the polarization correlated of its detection, still, when reducing polarization correlated, in certain journey
The maximum absorptivity of SNSPD is limited on degree, and above-mentioned three kinds of SNSPD structures are more complicated.
Therefore it provides it is a kind of with high-selenium corn efficiency, inhibit polarization sensitivity and be avoided that substrate Fabry-
The superconducting nano-wire single-photon detector of influence of the Perot chamber to absorption efficiency is necessary.
Summary of the invention
In view of the foregoing deficiencies of prior art, inhibit the super of polarization sensitivity the purpose of the present invention is to provide a kind of
Nanowire single photon detector is led, superconducting nano-wire single-photon detector absorption efficiency in the prior art is low, polarizes for solving
The problems such as influence that susceptibility is higher and substrate Fabry-Perot cavity is to absorption efficiency.
In order to achieve the above objects and other related objects, the present invention provides a kind of superconducting nano-wire for inhibiting polarization sensitivity
Single-photon detector, comprising:
Substrate；
High-reflecting film is located at the substrate surface；
Superconducting nano-wire is located at the high-reflecting film surface；
Dielectric layer is located at the high-reflecting film surface, and coats the superconducting nano-wire, is suitable for reducing the superconducting nano-wire
To light absorption polarization sensitivity.
A kind of preferred embodiment of superconducting nano-wire single-photon detector as inhibition polarization sensitivity of the invention, it is described
High-reflecting film includes alternately stacked SiO2Film layer and Si film layer, alternately stacked SiO2Film layer and TiO2Film layer is handed over
For the SiO of stacking2Film layer and Ta2O5Film layer.
A kind of preferred embodiment of superconducting nano-wire single-photon detector as inhibition polarization sensitivity of the invention, it is described
In high-reflecting film, the thickness of each film layer be equal to incident light in this layer effective wavelength 1/4.
A kind of preferred embodiment of superconducting nano-wire single-photon detector as inhibition polarization sensitivity of the invention, it is described
The material of superconducting nano-wire includes NbN, Nb, TaN, MoSi, MoGe, NbTiN or WSi.
A kind of preferred embodiment of superconducting nano-wire single-photon detector as inhibition polarization sensitivity of the invention, it is described
Superconducting nano-wire is zigzag shape.
A kind of preferred embodiment of superconducting nano-wire single-photon detector as inhibition polarization sensitivity of the invention, it is described
The width of superconducting nano-wire is 50~150 nanometers.
A kind of preferred embodiment of superconducting nano-wire single-photon detector as inhibition polarization sensitivity of the invention, it is described
Superconducting nano-wire with a thickness of 5~10 nanometers.
A kind of preferred embodiment of superconducting nano-wire single-photon detector as inhibition polarization sensitivity of the invention, it is described
Substrate includes silicon substrate, MgO substrate or Sapphire Substrate.
A kind of preferred embodiment of superconducting nano-wire single-photon detector as inhibition polarization sensitivity of the invention, it is described
The half with a thickness of incident light effective wavelength in this layer of dielectric layer.
A kind of preferred embodiment of superconducting nano-wire single-photon detector as inhibition polarization sensitivity of the invention, it is described
The material of dielectric layer is high-index material.
A kind of preferred embodiment of superconducting nano-wire single-photon detector as inhibition polarization sensitivity of the invention, it is described
The material of dielectric layer is Si, SiO, Ta2O5Or TiO2。
As described above, the present invention provides a kind of superconducting nano-wire single-photon detector for inhibiting polarization sensitivity, the suppression
The superconducting nano-wire single-photon detector of polarization sensitivity processed includes: substrate；High-reflecting film is located at the substrate surface；Superconduction is received
Rice noodles are located at the high-reflecting film surface；Dielectric layer is located at the high-reflecting film surface, and coats the superconducting nano-wire.The present invention
Inhibition polarization sensitivity superconducting nano-wire single-photon detector on high-reflecting film processing prepare superconducting nano-wire, the device junction
Structure can be shone directly into light on superconducting nano-wire by positive optical coupling, can be poly- to avoid optical cavity structure medium and long distance
Burnt problem, and then influence of the substrate Fabry-Perot cavity to absorption efficiency is avoided, and to target wavelength suction with higher
It produces effects rate, effectively increases device detection efficient；Meanwhile the superconducting nano-wire single-photon detecting of inhibition polarization sensitivity of the invention
The high refractive index medium layer that device coats superconducting nano-wire by growing on high-reflecting film surface is surveyed, the polarization that can reduce device is related
Property.
Detailed description of the invention
Fig. 1 is shown as a kind of superconducting nano-wire single-photon detectors structure of positive incidence structure in the prior art
Structural schematic diagram.
Fig. 2 is shown as a kind of superconducting nano-wire single-photon detectors structure of back surface incident structure in the prior art
Structural schematic diagram.
Fig. 3 is shown as the superconducting nano-wire single-photon detector of the inhibition polarization sensitivity provided in the embodiment of the present invention one
Structural schematic diagram.
Fig. 4 is shown as the superconducting nano-wire single-photon detector of the inhibition polarization sensitivity provided in the embodiment of the present invention two
Structural schematic diagram.
Fig. 5 is shown as the superconducting nano-wire single-photon detector of the inhibition polarization sensitivity provided in the embodiment of the present invention three
Structural schematic diagram.
Component label instructions
10 substrates
11 SiO2Layer
12 optical cavity structures
13 SiO layers
14 superconducting nano-wires
15 reflecting mirrors
20 substrates
21 high-reflecting films
211 SiO2Film layer
212 Si film layers
213 TiO2Film layer
214 Ta2O5Film layer
22 superconducting nano-wires
23 dielectric layers
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Please refer to Fig. 3~Fig. 5.It should be noted that diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, though only show in diagram with related component in the present invention rather than package count when according to actual implementation
Mesh, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its
Assembly layout kenel may also be increasingly complex.
Embodiment 1
As shown in figure 3, the present embodiment provides a kind of superconducting nano-wire single-photon detector for inhibiting polarization sensitivity, packet
It includes:
Substrate 20；
High-reflecting film 21 is located at 20 surface of substrate；
Superconducting nano-wire 22 is located at 21 surface of high-reflecting film；
Dielectric layer 23 is located at 21 surface of high-reflecting film, and coats the superconducting nano-wire 22, is suitable for reducing the superconduction
Nano wire 22 is to light absorption polarization sensitivity.
As an example, the superconducting nano-wire single-photon detector of the inhibition polarization sensitivity of the present embodiment is the incident knot in front
The superconducting nano-wire single-photon detector of structure.
As an example, the substrate 20 include silicon substrate, MgO substrate or Sapphire Substrate, the substrate 20 with a thickness of
300~500 microns.In the present embodiment, the substrate 20 is silicon substrate, with a thickness of 400 microns.Certainly, other kinds of
Substrate 20 or thickness may also be suitable for the present invention, therefore, several examples that place enumerates that it's not limited to that.
As an example, as shown in figure 3, the high-reflecting film 21 is alternately stacked SiO2Film layer 211 and Si film layer
212.It can be the SiO2Film layer 211 is located at the surface of the substrate 20, and the Si film layer 212 is located at the SiO2It is thin
The top of film layer 211；Or the Si film layer 212 is located at the surface of the substrate 20, the SiO as shown in Figure 32It is thin
Film layer 211 is located at the top of the Si film layer 212.
As an example, the thickness of each film layer is equal to incident light effective wavelength in this layer in the high-reflecting film 21
1/4。
The high-reflecting film 21 is set below the superconducting nano-wire 22, light can be directly coupled to the superconducting nano
On line 22, higher absorption efficiency is realized；Can be to avoid the focusing of optical cavity structure medium and long distance the problem of；Avoid substrate
Influence of the Fabry-Perot cavity to absorption efficiency.
As an example, the superconducting nano-wire 22 is zigzag shape.The material of the superconducting nano-wire 22 includes
NbN, Nb, TaN, MoSi, MoGe, NbTiN or WSi.The width of the superconducting nano-wire 22 is 50 nanometers~150 nanometers, described
Superconducting nano-wire 22 with a thickness of 5 nanometers~10 nanometers.Preferably, in the present embodiment, the material of the superconducting nano-wire 22 is
NbN, width are 100 nanometers, and with a thickness of 7 nanometers, the period is 200 nanometers, also, the superconducting nano-wire 22 is in zigzag
Structure.Certainly, in other embodiments, the material of the superconducting nano-wire 22, size and shape can be according to actual demands
It is changed, however it is not limited to situation recited herein.
As an example, the half with a thickness of incident light effective wavelength in this layer of the dielectric layer 23, i.e., the described medium
The half-wavelength with a thickness of incident light under 23 material parameter of dielectric layer of layer 23.
As an example, the material of the dielectric layer 23 is high-index material, it is preferable that in the present embodiment, the medium
The material of layer 23 is Si, SiO, Ta2O5Or TiO2Deng.The superconducting nano-wire 22 is placed in the dielectric layer 23, protection is played
Function of the superconducting nano-wire 22 from oxidation.By the height that cladding superconducting nano-wire 22 is arranged on 21 surface of high-reflecting film
The dielectric layer 23 of refractive index can reduce the polarization correlated of the superconducting nano-wire single-photon detector.
In the present invention, the optical texture of the superconducting nano-wire single-photon detector for inhibiting polarization sensitivity is divided into two
Main functional parts: first part is that optics cavity positioned at the lower section of the superconducting nano-wire 22 is played in 21 part of high-reflecting film
The effect of body increases the optical absorption of the superconducting nano-wire 22；Second part is being formed by high-index material for filling
Dielectric layer 23, surface and the cladding superconducting nano-wire 22 positioned at the high-reflecting film 21, can reduce the superconducting nano-wire
22 pairs of light absorption polarization sensitivities.The superconducting nano-wire single-photon detector of inhibition polarization sensitivity of the invention benefits from maturation
Optical film technique, be very easy to realize, process costs are lower；Total uses all dielectric material, avoids metal material
To the absorption loss of light, loss of the metal material to infrared band light is particular avoided；The superconducting nano-wire 22 is placed in
In optical thin film, the function of protecting the superconducting nano-wire 22 from oxidation can be played.Inhibition polarization sensitivity of the invention
Superconducting nano-wire single-photon detector can avoid substrate Fabry-Perot cavity can be to the influence of absorption efficiency, to target wave
Long absorption efficiency with higher, can effectively improve device detection efficient；The polarization correlated of device can be reduced simultaneously.
Embodiment 2
As shown in figure 4, the present embodiment also provides a kind of superconducting nano-wire single-photon detector for inhibiting polarization sensitivity, this
Inhibit the basic structure such as embodiment 1 of the superconducting nano-wire single-photon detector of polarization sensitivity essentially identical in embodiment, two
The difference of person is: high-reflecting film 21 described in embodiment one is alternately stacked SiO2Film layer 211 and Si film layer 212；And
High-reflecting film 21 described in the present embodiment is alternately stacked SiO2Film layer 211 and TiO2Film layer 213.The high-reflecting film 21 can
Think the SiO2Film layer 211 is located at the surface of the substrate 20, the TiO2Film layer 213 is located at the SiO2Film layer
211 top；Or the TiO as shown in Figure 42Film layer 213 is located at the surface of the substrate 20, the SiO2Film
Layer 211 is located at the TiO2The top of film layer 213.
Embodiment 3
As shown in figure 5, the present embodiment provides a kind of superconducting nano-wire single-photon detector for inhibiting polarization sensitivity, this reality
Applying in example inhibits the basic structure such as embodiment 1 of the superconducting nano-wire single-photon detector of polarization sensitivity essentially identical, the two
Difference be: high-reflecting film 21 described in embodiment one be alternately stacked SiO2Film layer 211 and Si film layer 212；And this
High-reflecting film 21 described in embodiment is alternately stacked SiO2Film layer 211 and Ta2O5Film layer 214.The high-reflecting film 21 can be with
For the SiO2Film layer 211 is located at the surface of the substrate 20, the Ta2O5Film layer 214 is located at the SiO2Film layer
211 top；Or the Ta as shown in Figure 52O5Film layer 214 is located at the surface of the substrate 20, the SiO2Film
Layer 211 is located at the Ta2O5The top of film layer 214.
As described above, the present invention provides a kind of superconducting nano-wire single-photon detector for inhibiting polarization sensitivity, comprising: lining
Bottom；High-reflecting film is located at the substrate surface；Superconducting nano-wire is located at the high-reflecting film surface；Dielectric layer is located at described high anti-
Film surface, and coat the superconducting nano-wire.The superconducting nano-wire single-photon detector of inhibition polarization sensitivity of the invention exists
Processing prepares superconducting nano-wire on high-reflecting film, which can shine directly into superconducting nano for light by positive optical coupling
On line, the problem of can focusing to avoid optical cavity structure medium and long distance, and then substrate Fabry-Perot cavity is avoided to absorption
The influence of efficiency, and to target wavelength absorption efficiency with higher, effectively increase device detection efficient；Meanwhile the present invention
The superconducting nano-wire single-photon detector of inhibition polarization sensitivity pass through and grow cladding superconducting nano-wire on high-reflecting film surface
High refractive index medium layer can reduce the polarization correlated of device.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (8)
1. a kind of superconducting nano-wire single-photon detector for inhibiting polarization sensitivity characterized by comprising
Substrate；
High-reflecting film is located at the substrate surface；
Superconducting nano-wire is located at the high-reflecting film surface；
Dielectric layer is located at the high-reflecting film surface, and coats the superconducting nano-wire, is suitable for reducing the superconducting nano-wire to light
Absorb polarization sensitivity；The half with a thickness of incident light effective wavelength in this layer of the dielectric layer, the material of the dielectric layer
Material is high-index material, and the material of the dielectric layer is Si, SiO, Ta2O5Or TiO2。
2. the superconducting nano-wire single-photon detector according to claim 1 for inhibiting polarization sensitivity, it is characterised in that: institute
Stating high-reflecting film includes alternately stacked SiO2Film layer and Si film layer, alternately stacked SiO2Film layer and TiO2Film layer or
Alternately stacked SiO2Film layer and Ta2O5Film layer.
3. the superconducting nano-wire single-photon detector according to claim 2 for inhibiting polarization sensitivity, it is characterised in that: institute
State in high-reflecting film, the thickness of each film layer be equal to incident light in this layer effective wavelength 1/4.
4. the superconducting nano-wire single-photon detector according to claim 1 for inhibiting polarization sensitivity, it is characterised in that: institute
The material for stating superconducting nano-wire includes NbN, Nb, TaN, MoSi, MoGe, NbTiN or WSi.
5. the superconducting nano-wire single-photon detector according to claim 1 for inhibiting polarization sensitivity, it is characterised in that: institute
Stating superconducting nano-wire is zigzag shape.
6. the superconducting nano-wire single-photon detector according to claim 1 for inhibiting polarization sensitivity, it is characterised in that: institute
The width for stating superconducting nano-wire is 50~150 nanometers；The superconducting nano-wire with a thickness of 5~10 nanometers.
7. the superconducting nano-wire single-photon detector according to claim 1 for inhibiting polarization sensitivity, it is characterised in that: institute
State superconducting nano-wire with a thickness of 5~10 nanometers.
8. the superconducting nano-wire single-photon detector according to claim 1 for inhibiting polarization sensitivity, it is characterised in that: institute
Stating substrate includes silicon substrate, MgO substrate or Sapphire Substrate.
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| EP4100707A4 (en) * | 2020-02-03 | 2024-03-13 | Applied Materials, Inc. | Snspd with integrated aluminum nitride seed or waveguide layer |
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| CN112071938B (en) * | 2020-08-07 | 2022-07-15 | 西安理工大学 | Superconducting nanowire single photon detector with mid-infrared broadband light absorption characteristic |
| CN112050935B (en) * | 2020-09-14 | 2022-06-24 | 中国科学院上海微系统与信息技术研究所 | Superconducting nanowire single photon detector and preparation method thereof |
| CN112345092B (en) * | 2020-11-06 | 2022-09-27 | 天津大学 | Superconducting nanowire single photon detector |
| CN113193105B (en) * | 2021-04-22 | 2024-03-22 | 南京大学 | Superconducting nanowire single photon detector based on topological optimization |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4100707A4 (en) * | 2020-02-03 | 2024-03-13 | Applied Materials, Inc. | Snspd with integrated aluminum nitride seed or waveguide layer |
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