CN106549098B - Narrow-band absorption superconducting nanowire single photon detector - Google Patents
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Abstract
The invention provides a single photon detector of a narrow-band absorption superconducting nanowire, which comprises: a substrate; the high-reflection film is positioned on the surface of the substrate; the superconducting nanowire is positioned on the surface of the high-reflection film; and the multilayer thin film filter is positioned on the surface of the high-reflection film, and a bottom thin film layer of the multilayer thin film filter coats the superconducting nanowire. The narrow-band absorption superconducting nanowire single photon detector is used for preparing the superconducting nanowires on the basis of the high-reflection film substrate, light can be directly irradiated onto the superconducting nanowires through front coupling, the problem of long-distance focusing in the superconducting nanowire single photon detector with an optical cavity structure can be solved, the influence of a Fabry-Perot cavity of the substrate on absorption efficiency is further avoided, high absorption efficiency is achieved for target wavelength, and the detection efficiency of the device is effectively improved; meanwhile, the multilayer film filter above the nanowire has a non-target wavelength filtering function, and can filter stray light in incident light, so that dark counting caused by black body radiation is effectively inhibited.
Description
Technical Field
The invention belongs to the technical field of optical detection, relates to a superconducting nanowire single photon detector, and particularly relates to a narrow-band absorption superconducting nanowire single photon detector.
Background
A Superconducting Nanowire Single Photon Detector (SNSPD) is a novel Single Photon Detector developed in recent years, and can realize efficient Single Photon detection in a visible light to near-infrared band. Due to its advantages of high quantum efficiency, low dark count, high detection rate, low time jitter, etc., SNSPD has been rapidly applied to applications such as quantum information technology, laser communication, range finding from the star to the earth, bioluminescence detection, depth imaging, etc.
The SNSPD mainly adopts low-temperature superconducting ultrathin film materials, such as NbN, Nb, NbTiN, WSi and the like. Typical thicknesses are about 5-10nm, and devices typically employ meandering nanowire structures of widths on the order of 100 nm. When the SNSPD works, the SNSPD is placed in a low-temperature environment (4K), the device is in a superconducting state, and a certain bias current Ib is added, wherein the Ib is slightly smaller than the critical current Ic of the device. When a single photon is incident on the nanowire in the device, the Cooper pairs can be broken up to form a large number of hot electrons, so that a local hot spot is formed, the hot spot is diffused due to Joule heat under the action of bias current Ib, and finally the nanowire is locally quenched to form a resistance region. Then the energy of the hot electrons is transferred and relaxed through the interaction of the electro-phonons, and then the energy is recombined into a Cooper pair in a superconducting state. Because the thermal relaxation time of the superconducting material is very short, after the SNSPD receives a single photon, a quick electric pulse signal is generated at two ends of the device, and the single photon detection function is realized.
A conventional superconducting nanowire single photon detector with a front-incident structure is shown in fig. 1, and includes a substrate 12, a silicon dioxide layer 11 on a surface of the substrate 10, and a superconducting nanowire 14 on a surface of the silicon dioxide layer 11, which has a simple structure but a low light absorption efficiency, and a Fabry-Perot (Fabry-Perot) cavity of the substrate 10 may have an influence on the absorption efficiency.
A conventional superconducting nanowire single photon detector with a back-incident structure is shown in fig. 2, and includes a substrate 10, an optical cavity structure 12 located on a surface of the substrate 10, a superconducting nanowire 14, and a mirror 15, where the optical cavity structure 12 includes a silicon dioxide layer 11 and a silicon oxide layer 13. This structure has a high absorption efficiency but still faces the device-to-back coupling loss, the problem of long distance (thickness of the substrate 10) focusing of the back light to the NbN nanowire needs to be solved, and the substrate 10Fabry-Perot cavity has some effect on the absorption efficiency.
Dark counts are one of the main parameters of single photon detectors. It refers to an erroneous count independent of signal photons. The sources of SNSPD dark counts include two aspects: one is the dark count caused by the magnetic flux vortex motion of the SNSPD nanowire, which is called intrinsic dark count and is related to the device working current, and is generated only when the working current is very close to the critical current, and the counting rate and the bias current are in an exponential relationship. Other non-signal photon triggered SNSPD counts are collectively referred to as extrinsic dark counts, including several possibilities: (1) dark counts of thermal radiation introduction by the fiber material itself; (2) when the SNSPD works, a small amount of various light (heat) radiation in a working environment enters the optical fiber through the optical fiber coating layer to trigger SNSPD counting as stray light. Extrinsic dark counts can be equivalent to a certain amount of photon radiation, which introduces a dark count proportional to the detection efficiency of the detector. Dark counts are critical for many single photon detection applications, especially for long-distance fiber quantum communications, and the level of dark counts is a key parameter that determines the signal-to-noise ratio of the code and the communication distance. At present, no effective method for fundamentally solving the intrinsic dark count exists, and a method for reducing the bias current of the SNSPD is generally adopted, and under the condition, the extrinsic dark count plays a decisive role. Shibata et al, Japan, propose a method of using an optical fiber filter at a low temperature, which can effectively reduce the extrinsic dark count, but also produces significant attenuation (about 3dB) to the signal light, directly affecting the detection efficiency of the device.
Therefore, it is necessary to provide a superconducting nanowire single photon detector which has high absorption efficiency, can reduce dark counts, and can avoid the influence of the Fabry-Perot cavity of the substrate on the absorption efficiency.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention provides a single photon detector with a narrow-band absorption superconducting nanowire, which is used to solve the problems of the prior art that the single photon detector with a superconducting nanowire has low absorption efficiency, the Fabry-Perot cavity of the substrate has an influence on the absorption efficiency, and the performance of the single photon detector with a superconducting nanowire is reduced due to dark counting.
To achieve the above and other related objects, the present invention provides a single photon detector with a narrow-band absorption superconducting nanowire, comprising:
a substrate;
the high-reflection film is positioned on the surface of the substrate;
the superconducting nanowire is positioned on the surface of the high-reflection film;
and the multilayer thin film filter is positioned on the surface of the high-reflection film, and a bottom thin film layer of the multilayer thin film filter coats the superconducting nanowire.
As a preferable scheme of the narrow-band absorption superconducting nanowire single photon detector, the high-reflectivity film comprises SiO (silicon dioxide) which is alternately laminated2Alternately laminated SiO thin film layer and Si thin film layer2Film layer and TiO2Thin film layers, or alternately laminatedSiO of (2)2Thin film layer and Ta2O5A thin film layer.
As a preferable scheme of the narrow-band absorption superconducting nanowire single photon detector, in the high-reflection film, the thickness of each thin film layer is equal to 1/4 of the equivalent wavelength of incident light in the layer.
As a preferable scheme of the narrow-band absorption superconducting nanowire single photon detector, the multilayer thin film filter comprises SiO which are alternately laminated2Alternately laminated SiO thin film layer and Si thin film layer2Film layer and TiO2Thin film layers, or alternately laminated SiO2Thin film layer and Ta2O5A thin film layer.
As a preferable scheme of the narrow-band absorption superconducting nanowire single photon detector, the material of the multilayer thin-film filter is different from that of the high-reflection film.
As a preferable scheme of the narrow-band absorption superconducting nanowire single photon detector, the superconducting nanowire is made of NbN, Nb, TaN, MoSi, MoGe, NbTiN or WSi.
As a preferable scheme of the narrow-band absorption superconducting nanowire single photon detector, the superconducting nanowire is in a zigzag winding shape.
As a preferable scheme of the narrow-band absorption superconducting nanowire single photon detector, the width of the superconducting nanowire is 50-150 nanometers.
As a preferable scheme of the narrow-band absorption superconducting nanowire single photon detector, the thickness of the superconducting nanowire is 5-10 nanometers.
As a preferable scheme of the narrow-band absorption superconducting nanowire single photon detector, the substrate comprises a silicon substrate, an MgO substrate or a sapphire substrate.
As described above, the present invention provides a single photon detector of a narrow-band absorption superconducting nanowire, comprising: a substrate; the high-reflection film is positioned on the surface of the substrate; the superconducting nanowire is positioned on the surface of the high-reflection film; and the multilayer thin film filter is positioned on the surface of the high-reflection film, and a bottom thin film layer of the multilayer thin film filter coats the superconducting nanowire. The narrow-band absorption superconducting nanowire single photon detector is used for preparing the superconducting nanowires on the basis of the high-reflection film substrate, light can be directly irradiated onto the superconducting nanowires through front coupling, the problem of long-distance focusing in the superconducting nanowire single photon detector with an optical cavity structure can be solved, the influence of a Fabry-Perot cavity of the substrate on absorption efficiency is further avoided, high absorption efficiency is achieved for target wavelength, and the detection efficiency of the device is effectively improved; meanwhile, the narrow-band absorption superconducting nanowire single photon detector has a non-target wavelength filtering function by arranging the multilayer film filter wrapping the superconducting nanowires on the surface of the high-reflection film, and can filter stray light in incident light, so that dark counting caused by black body radiation is effectively inhibited.
Drawings
Fig. 1 shows a schematic structural diagram of a superconducting nanowire single photon detection device structure with a front-incident structure in the prior art.
Fig. 2 shows a schematic structural diagram of a superconducting nanowire single photon detection device structure with a back-incident structure in the prior art.
Fig. 3 is a schematic structural diagram of a single photon detector with a narrow-band absorption superconducting nanowire provided in an embodiment of the present invention.
Fig. 4 shows an absorption spectrum of a narrow-band absorption superconducting nanowire single photon detector provided in the first embodiment of the invention.
Fig. 5 is a schematic structural diagram of a single photon detector with a narrow-band absorption superconducting nanowire provided in the second embodiment of the present invention.
Fig. 6 is a schematic structural diagram of a single photon detector with a narrow-band absorption superconducting nanowire provided in the third embodiment of the present invention.
Fig. 7 is a schematic structural diagram of a single photon detector with a narrow-band absorption superconducting nanowire provided in the fourth embodiment of the present invention.
Fig. 8 is a schematic structural diagram of a single photon detector with a narrow-band absorption superconducting nanowire provided in the fifth embodiment of the present invention.
Fig. 9 is a schematic structural diagram of a single photon detector of a narrow-band absorption superconducting nanowire provided in the sixth embodiment of the present invention.
Description of the element reference numerals
10 substrate
11 SiO2Layer(s)
12 optical cavity structure
13 SiO layer
14 superconductive nanowire
15 reflecting mirror
20 substrate
21 high-reflection film
211 SiO2Film layer
212 Si thin film layer
213 TiO2Film layer
214 Ta2O5Film layer
22 superconductive nanowire
23 multilayer thin film filter
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 3 to fig. 9. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and although the drawings only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation, the type, quantity and proportion of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
Example 1
As shown in fig. 3, the present embodiment provides a single photon detector with a narrow-band absorption superconducting nanowire, including:
a substrate 20;
a high-reflection film 21 positioned on the surface of the substrate 20;
the superconducting nanowire 22 is positioned on the surface of the high-reflection film 21;
and the multilayer thin film filter 23 is positioned on the surface of the high-reflection film 21, and a bottom thin film layer of the multilayer thin film filter 23 coats the superconducting nanowire 22.
As an example, the narrow-band absorption superconducting nanowire single photon detector of the present embodiment is a superconducting nanowire single photon detector with a front-incident structure.
As an example, the substrate 20 comprises a silicon substrate, an MgO substrate or a sapphire substrate, and the thickness of the substrate 20 is 300-500 micrometers. In the present embodiment, the substrate 20 is a silicon substrate having a thickness of 400 μm. Of course, other types of substrates 20 or thicknesses may be suitable for use with the present invention, and thus, are not limited to the examples listed herein.
As an example, as shown in FIG. 3, the high-reflective film 21 is SiO alternately laminated2A thin film layer 211 and a Si thin film layer 212. The high-reflection film 21 may be the SiO2A thin film layer 211 on the surface of the substrate 20, and a Si thin film layer 212 on the SiO2Above the thin film layer 211; the Si thin film layer 212 may be located on the surface of the substrate 20 as shown in FIG. 3, and the SiO may be2The thin film layer 211 is located above the Si thin film layer 212.
As an example, the SiO in the high-reflection film 212The number of layers of the thin film layer 211 and the Si thin film layer 212 may be set according to actual needs, and in this embodiment, the SiO layer is preferably used2The number of the thin film layers 211 and the Si thin film layers 212 is 13, that is, the high-reflection film 21 includes 26 thin film layers in total.
By way of example, in the high-reflection film 21, the thickness of each thin film layer is equal to 1/4, which is the equivalent wavelength of incident light in that layer.
The high-reflection film 21 is arranged below the superconducting nanowire 22, so that light can be directly coupled to the superconducting nanowire 22, and high absorption efficiency is realized; the problem of long-distance focusing in the optical cavity structure can be avoided; the influence of the Fabry-Perot cavity of the substrate on the absorption efficiency is avoided.
By way of example, the superconducting nanowires 22 are serpentine in shape. The material of the superconducting nanowire 22 includes NbN, Nb, TaN, MoSi, MoGe, NbTiN, or WSi. The width of the superconducting nanowire 22 is 50 nm to 150 nm, and the thickness of the superconducting nanowire 22 is 5 nm to 10 nm. Preferably, in this embodiment, the material of the superconducting nanowire 22 is NbN, the width of the superconducting nanowire is 100nm, the thickness of the superconducting nanowire is 7 nm, and the period of the superconducting nanowire 22 is 200 nm, and the superconducting nanowire 22 has a zigzag structure. Of course, in other embodiments, the material, size and shape of the superconducting nanowires 22 can be changed according to practical requirements, and are not limited to the cases listed herein.
As an example, the multilayer thin film filter 23 is SiO alternately laminated2Thin film layer 211 and TiO2Thin film layer 213. The multilayer thin film filter 23 may be the SiO2A thin film layer 211 on the surface of the high-reflection film 21, the TiO layer2A thin film layer 213 is located on the SiO2Above the thin film layer 211; or may be TiO as shown in FIG. 32A thin film layer 213 on the surface of the high-reflectivity film 21, the SiO2A thin film layer 211 on the TiO2Above the thin film layer 213.
As an example, the SiO in the multilayer thin-film filter 232Thin film layer 211 and the TiO2The number of the thin film layers 213 can be set according to actual needs, and preferably, in this embodiment, the SiO layer is used2Thin film layer 211 and the TiO2The number of the thin film layers 213 is 16, that is, the high-reflection film 21 includes 32 thin film layers.
Referring to fig. 4, as can be seen from fig. 4, the absorption spectrum of the narrow-band absorption superconducting nanowire single photon detector has a significant light absorption with a narrow-band filtering function.
In the invention, the optical structure of the narrow-band absorption superconducting nanowire single photon detector is divided into two main functional parts: the first part is the high reflection film 21 part, which is positioned below the superconducting nanowire 22 and plays the role of an optical cavity to increase the optical absorption of the superconducting nanowire 22; the second part is the multilayer thin film filter 23 with a narrow-band filtering function, which is located above the superconducting nanowire 22 and can be used for filtering stray light in incident light, so as to play a role in suppressing dark count of the device. The narrow-band absorption superconducting nanowire single-photon detector disclosed by the invention benefits from the mature optical thin-film technology, is very easy to realize and has lower process cost; the whole structure uses all-dielectric materials, so that the absorption loss of metal materials to light is avoided, and especially the loss of the metal materials to infrared band light is avoided; the superconducting nanowires 22 are disposed in an optical film, which can protect the superconducting nanowires 22 from oxidation. The narrow-band absorption superconducting nanowire single photon detector can avoid the influence of a substrate Fabry-Perot cavity on the absorption efficiency, has higher absorption efficiency on the target wavelength, and can effectively improve the detection efficiency of a device; and simultaneously, the effect of dark counting of the device can be inhibited.
Example 2
As shown in fig. 5, the present embodiment further provides a single photon detector with a narrow-band absorption superconducting nanowire, in the present embodiment, the basic structure of the single photon detector with a narrow-band absorption superconducting nanowire is substantially the same as that in embodiment 1, and the difference between the two is as follows: the multilayer thin film filter 23 of example 1 is an SiO laminated alternately2Thin film layer 211 and TiO2A thin film layer 213; in this embodiment, the multi-layer thin film filter 23 is formed by alternately stacking SiO2Thin film layer 211 and Ta2O5A film layer 214. The multilayer thin film filter 23 may be the SiO2A thin film layer 211 on the surface of the high-reflection film 21, Ta2O5A thin film layer 214 is located on the SiO2Above the thin film layer 211; may also be Ta as described in FIG. 52O5The thin film layer 214 is positioned on the surface of the high-reflection film 21Face of said SiO2A thin film layer 211 located on the Ta2O5Over the thin film layer 214.
Example 3
As shown in fig. 6, the present embodiment provides a single photon detector with a narrow-band absorption superconducting nanowire, in which the basic structure of the single photon detector with a narrow-band absorption superconducting nanowire is substantially the same as that of embodiment 1, and the difference between the two is as follows: the high-reflective film 21 in example 1 is SiO alternately laminated2A thin film layer 211 and a Si thin film layer 212, and the high-reflective film 21 is SiO alternately laminated in this embodiment2Thin film layer 211 and TiO2A thin film layer 213; the multilayer thin film filter 23 of example 1 is an SiO laminated alternately2Thin film layer 211 and TiO2A thin film layer 213; in this embodiment, the multi-layer thin film filter 23 is formed by alternately stacking SiO2A thin film layer 211 and a Si thin film layer 212. The high-reflection film 21 may be the SiO2A thin film layer 211 on the surface of the substrate 20, the TiO2A thin film layer 213 is located on the SiO2Above the thin film layer 211; the TiO can also be the TiO shown in FIG. 62A thin film layer 213 on the surface of the substrate 20, the SiO2A thin film layer 211 on the TiO2Above the thin film layer 213. The multilayer thin film filter 23 may be the SiO2A thin film layer 211 on the surface of the high-reflectivity film 21, and a Si thin film layer 212 on the SiO2Above the thin film layer 211; the Si thin film layer 212 may be located on the surface of the high-reflection film 21 as shown in FIG. 6, and the SiO may be provided2The thin film layer 211 is located above the Si thin film layer 212.
Example 4
As shown in fig. 7, the present embodiment further provides a single photon detector with a narrow-band absorption superconducting nanowire, in the present embodiment, the basic structure of the single photon detector with a narrow-band absorption superconducting nanowire is substantially the same as that in embodiment 3, and the difference between the two is as follows: the multilayer thin film filter 23 of example 3 is an alternately laminated SiO2A thin film layer 211 and a Si thin film layer 212; in this embodiment, the multi-layer thin film filter 23 is formed by alternately stacking SiO2Thin film layer 211 and Ta2O5A film layer 214. The multilayer thin film filter 23 may be the SiO2A thin film layer 211 on the surface of the high-reflection film 21, Ta2O5A thin film layer 214 is located on the SiO2Above the thin film layer 211; may also be Ta as described in FIG. 72O5A thin film layer 214 on the surface of the high-reflectivity film 21, the SiO2A thin film layer 211 located on the Ta2O5Over the thin film layer 214.
Example 5
As shown in fig. 8, the present embodiment further provides a single photon detector with a narrow-band absorption superconducting nanowire, in the present embodiment, the basic structure of the single photon detector with a narrow-band absorption superconducting nanowire is substantially the same as that in embodiment 3, and the difference between the two is as follows: in example 3, the high-reflective film 21 is SiO alternately laminated2Thin film layer 211 and TiO2A thin film layer 213; in this embodiment, the high-reflective films 21 are alternately laminated SiO2Thin film layer 211 and Ta2O5A film layer 214. The high-reflection film 21 may be the SiO2A thin film layer 211 on the surface of the substrate 20, Ta2O5A thin film layer 214 is located on the SiO2Above the thin film layer 211; may be Ta as shown in FIG. 82O5A thin film layer 214 on the surface of the substrate 20, the SiO2A thin film layer 211 located on the Ta2O5Over the thin film layer 214.
Example 6
As shown in fig. 9, the present embodiment further provides a single photon detector with a narrow-band absorption superconducting nanowire, in the present embodiment, the basic structure of the single photon detector with a narrow-band absorption superconducting nanowire is substantially the same as that in embodiment 5, and the difference between the two is as follows: the multilayer thin film filter 23 of example 5 is an SiO laminated alternately2A thin film layer 211 and a Si thin film layer 212; in this embodiment, the multi-layer thin film filter 23 is formed by alternately stacking SiO2Thin film layer 211 and TiO2Thin film layer 213. The multilayer thin film filter 23 may be the SiO2A thin film layer 211 on the surface of the high-reflection film 21, the TiO layer2A thin film layer 213 is located on the SiO2On the thin film layer 211A method for preparing; the TiO can also be the TiO shown in FIG. 92A thin film layer 213 on the surface of the high-reflectivity film 21, the SiO2A thin film layer 211 on the TiO2Above the thin film layer 213.
As described above, the present invention provides a single photon detector with a narrow-band absorption superconducting nanowire, comprising: a substrate; the high-reflection film is positioned on the surface of the substrate; the superconducting nanowire is positioned on the surface of the high-reflection film; and the multilayer thin film filter is positioned on the surface of the high-reflection film, and a bottom thin film layer of the multilayer thin film filter coats the superconducting nanowire. The narrow-band absorption superconducting nanowire single photon detector is used for preparing the superconducting nanowires on the basis of the high-reflection film substrate, light can be directly irradiated onto the superconducting nanowires through front coupling, the problem of long-distance focusing in the superconducting nanowire single photon detector with an optical cavity structure can be solved, the influence of a Fabry-Perot cavity of the substrate on absorption efficiency is further avoided, high absorption efficiency is achieved for target wavelength, and the detection efficiency of the device is effectively improved; meanwhile, the narrow-band absorption superconducting nanowire single photon detector has a non-target wavelength filtering function by arranging the multilayer film filter wrapping the superconducting nanowires on the surface of the high-reflection film, and can filter stray light in incident light, so that dark counting caused by black body radiation is effectively inhibited.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (7)
1. A single photon detector of a narrow-band absorption superconducting nanowire is characterized by comprising:
a substrate;
the high-reflection film is positioned on the surface of the substrate; the high-reflection film comprises alternately laminated SiO2The thin film layer is crossed with the Si thin film layerSiO of alternate layer2Film layer and TiO2Thin film layers, or alternately laminated SiO2Thin film layer and Ta2O5A thin film layer;
the superconducting nanowire is positioned on the surface of the high-reflection film;
the multilayer thin film filter is positioned on the surface of the high-reflection film, and a bottom thin film layer of the multilayer thin film filter coats the superconducting nanowire; the multilayer thin film filter comprises alternately laminated SiO2Alternately laminated SiO thin film layer and Si thin film layer2Film layer and TiO2Thin film layers, or alternately laminated SiO2Thin film layer and Ta2O5And the material of the multilayer thin film filter is different from that of the high-reflection film.
2. The narrow band absorption superconducting nanowire single photon detector of claim 1, wherein: in the high-reflection film, the thickness of each thin film layer is equal to 1/4 of the equivalent wavelength of incident light in the layer.
3. The narrow band absorption superconducting nanowire single photon detector of claim 1, wherein: the material of the superconducting nanowire comprises NbN, Nb, TaN, MoSi, MoGe, NbTiN or WSi.
4. The narrow band absorption superconducting nanowire single photon detector of claim 1, wherein: the superconducting nanowires are of a meandering serpentine shape.
5. The narrow band absorption superconducting nanowire single photon detector of claim 1, wherein: the width of the superconducting nanowire is 50-150 nanometers.
6. The narrow band absorption superconducting nanowire single photon detector of claim 1, wherein: the thickness of the superconducting nanowire is 5-10 nanometers.
7. The narrow band absorption superconducting nanowire single photon detector of claim 1, wherein: the substrate includes a silicon substrate, an MgO substrate, or a sapphire substrate.
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| CN108666388B (en) * | 2017-03-31 | 2020-06-30 | 中国科学院上海微系统与信息技术研究所 | Superconducting nanowire single photon detector of integrated optical thin film filter |
| CN107507884B (en) * | 2017-08-10 | 2020-12-01 | 中国科学院上海微系统与信息技术研究所 | Wide-spectrum superconducting nanowire single photon detection device |
| CN107507883B (en) * | 2017-08-10 | 2019-05-14 | 中国科学院上海微系统与信息技术研究所 | Whisker single-photon detectors |
| CN109786494B (en) * | 2017-11-14 | 2020-08-11 | 哈尔滨工业大学 | Ultraviolet detector with microcavity structure and preparation method thereof |
| CN108666409A (en) * | 2018-05-10 | 2018-10-16 | 东南大学 | A kind of structure improving superconducting nano-wire absorption efficiency |
| CN112781735B (en) * | 2019-11-08 | 2022-05-17 | 中国科学院上海微系统与信息技术研究所 | Preparation method of self-aligned superconducting nanowire single photon detector based on high-reflectivity film |
| CN113193105B (en) * | 2021-04-22 | 2024-03-22 | 南京大学 | Superconducting nanowire single photon detector based on topological optimization |
| CN114942485A (en) * | 2022-05-16 | 2022-08-26 | 南京大学 | Self-filtering superconducting nanowire single photon detector |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102829884A (en) * | 2012-09-10 | 2012-12-19 | 清华大学 | High-speed superconducting nanowire single-photon detector (SNSPD) with strong absorption structure and preparation method of high-speed SNSPD |
| CN104064631A (en) * | 2014-07-15 | 2014-09-24 | 中国科学院上海微系统与信息技术研究所 | Method and device for reducing non-intrinsic dark count of superconducting nanowire single photon detector |
| CN104091883A (en) * | 2014-07-15 | 2014-10-08 | 中国科学院上海微系统与信息技术研究所 | Superconductive nanowire single photon detector based on dielectric film reflector |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6812464B1 (en) * | 2000-07-28 | 2004-11-02 | Credence Systems Corporation | Superconducting single photon detector |
-
2015
- 2015-09-17 CN CN201510593967.XA patent/CN106549098B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102829884A (en) * | 2012-09-10 | 2012-12-19 | 清华大学 | High-speed superconducting nanowire single-photon detector (SNSPD) with strong absorption structure and preparation method of high-speed SNSPD |
| CN104064631A (en) * | 2014-07-15 | 2014-09-24 | 中国科学院上海微系统与信息技术研究所 | Method and device for reducing non-intrinsic dark count of superconducting nanowire single photon detector |
| CN104091883A (en) * | 2014-07-15 | 2014-10-08 | 中国科学院上海微系统与信息技术研究所 | Superconductive nanowire single photon detector based on dielectric film reflector |
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