CN108365049B - Large-photosurface superconducting nanowire single photon detector - Google Patents
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Abstract
The invention provides a large-photosurface superconducting nanowire single photon detector, which comprises at least one layer of superconducting nanowire structure, wherein the superconducting nanowire structure comprises: the plurality of linear parts are arranged in parallel at intervals and comprise at least two superconducting nanowires arranged in parallel at intervals; the first connecting parts are used for sequentially connecting the straight line parts end to end into a serpentine shape; the second connecting parts are positioned in the linear part and positioned among the superconducting nanowires which are arranged in the linear part at intervals in parallel; the plurality of second connecting parts positioned in the same straight line part are arranged in parallel at intervals; along the direction parallel to the straight line part, the part of the superconducting nanowire structure corresponding to the write field splicing part is a second connecting part; along the direction perpendicular to the straight line parts, the part of the superconducting nanowire structure corresponding to the write field splicing part is a gap between the adjacent straight line parts. The method can avoid the influence of the write field splicing error on the core area of the superconducting nanowire, so that the performance of the superconducting nanowire single-photon detector with the large photosensitive surface cannot be ensured.
Description
Technical Field
The invention belongs to the technical field of optical detection, relates to a large-photosurface superconducting nanowire single-photon detector, and particularly relates to a large-photosurface superconducting nanowire single-photon detector.
Background
A Superconducting Nanowire Single Photon Detector (SNSPD) is a novel Single photon detector developed in recent years, and can realize efficient Single photon detection in a visible light to near-infrared band. Due to its advantages of high quantum efficiency, low dark count, high detection rate, low time jitter, etc., SNSPD has been rapidly applied to applications such as quantum information technology, laser communication, range finding from the star to the earth, bioluminescence detection, depth imaging, etc.
The SNSPD mainly adopts low-temperature superconducting ultrathin film materials, such as NbN, Nb, NbTiN, WSi and the like. Typical thicknesses are about 5-10nm, and devices typically employ meandering nanowire structures of widths on the order of 100 nm. SNSPD is placed in low-temperature environment during operation (<4K) The device is in superconducting state and is applied with a certain bias current Ib，IbSlightly less than critical current I of the devicec. When a single photon is incident on a nanowire in the device, it willThe Cooper pairs are broken up to form a large number of hot electrons, thereby forming local hot spots which are biased at a bias current IbFinally, the nano lines are locally quenched to form a resistance area due to diffusion of Joule heat under the action of the heat source. Then the energy of the hot electrons is transferred and relaxed through the interaction of the electro-phonons, and then the energy is recombined into a Cooper pair in a superconducting state. Because the thermal relaxation time of the superconducting material is very short, after the SNSPD receives a single photon, a quick electric pulse signal is generated at two ends of the device, and the single photon detection function is realized.
The large-area single photon detection technology has wide application prospect in the aspects of quantum communication and free space coupling technology, and particularly has the characteristics of high detection efficiency, low dark count, low time jitter and high counting rate for a large-area Superconducting Nanowire Single Photon Detector (SNSPD). However, because the traditional superconducting nanowire single-photon detector adopts a nanowire zigzag structure, the total length of the nanowire is increased along with the square magnitude of the area, the dynamic inductance is rapidly increased, and the counting rate of the device is greatly reduced. How to increase the speed of the large-area SNSPD device becomes an important problem to be solved in research.
The electron beam Exposure (EBL) process is a key process for the fabrication of superconducting nanowire structures in superconducting nanowire single photon detectors. In the process of preparing the large-photosensitive-surface superconducting nanowire single-photon detector, the preparation of the large-area superconducting nanowire structure is limited by the size of a writing field of electron beam exposure equipment, so that the preparation of the large-area superconducting nanowire structure is required to be realized by a method of splicing the writing field of electron beam exposure. However, for the conventional superconducting nanowire single-photon detector, the splicing error of the electron beam exposure writing field can reach 10 nanometers, so that the superconducting nanowire in the conventional superconducting nanowire single-photon detector can have obvious offset at the splicing position of the writing field, which has a great adverse effect on the performance of the superconducting nanowire single-photon detector.
Disclosure of Invention
In view of the above disadvantages of the prior art, an object of the present invention is to provide a large-photosurface superconducting nanowire single-photon detector, which is used to solve the problem that due to the adoption of a single nano zigzag line structure in the superconducting nanowire single-photon detector in the prior art, when a large-area superconducting nanowire single-photon detector is prepared by an electron beam exposure write field splicing method, the splice error of the electron beam exposure write field can reach 10nm order, so that the superconducting nanowire in the conventional superconducting nanowire single-photon detector can obviously deviate at the write field splice, and the performance of the superconducting nanowire single-photon detector is greatly affected.
In order to achieve the above and other related objects, the present invention provides a large-photosurface superconducting nanowire single photon detector, which comprises at least one layer of superconducting nanowire structure formed by performing field-writing splicing exposure for multiple times based on an electron beam exposure process, wherein the superconducting nanowire structure comprises:
the superconducting nanowire array comprises a plurality of linear parts which are arranged in parallel at intervals, wherein each linear part comprises at least two superconducting nanowires which are arranged in parallel at intervals;
the first connecting parts connect the linear parts end to end in sequence in a winding shape, and the superconducting nanowires in the linear parts are connected through the first connecting parts;
the second connecting parts are positioned in the linear part, positioned among the superconducting nanowires arranged in the linear part at intervals in parallel and used for connecting the adjacent superconducting nanowires in the linear part; the plurality of second connecting parts positioned in the same linear part are arranged in parallel at intervals;
along the direction parallel to the straight line part, the part of the superconducting nanowire structure corresponding to the write field splicing part is the second connecting part; along the direction perpendicular to the straight line parts, the part of the superconducting nanowire structure corresponding to the splicing position of the writing field is a gap between the adjacent straight line parts.
As a preferable scheme of the large-photosurface superconducting nanowire single photon detector, the first connecting part and the second connecting part are both superconducting nanowires.
As a preferable scheme of the large-photosurface superconducting nanowire single photon detector, the length direction of the second connecting part is perpendicular to the length direction of the superconducting nanowire in the linear part.
As a preferable scheme of the large-photosurface superconducting nanowire single photon detector, the outline of the superconducting nanowire structure is rectangular, circular or elliptical.
As a preferable scheme of the large-photosurface superconducting nanowire single-photon detector, the large-photosurface superconducting nanowire single-photon detector further comprises a substrate, and the superconducting nanowire structure is located on the substrate.
As a preferable scheme of the large-photosurface superconducting nanowire single photon detector, the large-photosurface superconducting nanowire single photon detector further comprises a reflector, and the reflector is located on the upper surface of the substrate and between the substrate and the superconducting nanowire structure.
As a preferred embodiment of the large-photosurface superconducting nanowire single photon detector of the present invention, the number of layers of the superconducting nanowire structure is N, and the large-photosurface superconducting nanowire single photon detector further comprises:
a substrate;
the N dielectric layers and the N superconducting nanowire structures are sequentially and alternately stacked on the upper surface of the substrate, the first dielectric layer is located on the upper surface of the substrate, and N is an integer larger than or equal to 1.
As a preferable scheme of the large-photosurface superconducting nanowire single photon detector, the large-photosurface superconducting nanowire single photon detector further comprises a reflector, and the reflector is located between the substrate and the first medium layer.
As a preferred scheme of the large-photosurface superconducting nanowire single-photon detector, the large-photosurface superconducting nanowire single-photon detector further comprises:
a substrate;
an optical cavity structure located on the upper surface of the substrate and completely covering the superconducting nanowire structure;
a mirror located on an upper surface of the optical cavity structure.
As a preferable scheme of the large-photosurface superconducting nanowire single photon detector, the large-photosurface superconducting nanowire single photon detector further comprises an optical film antireflection layer, and the optical film antireflection layer is located on the lower surface of the substrate.
As a preferable scheme of the large-photosurface superconducting nanowire single photon detector, an upper anti-reflection layer is further arranged on the upper surface of the substrate, and a lower anti-reflection layer is further arranged on the lower surface of the substrate.
As a preferable scheme of the large-photosurface superconducting nanowire single photon detector, the large-photosurface superconducting nanowire single photon detector further comprises an optical film anti-reflection layer, and the optical film anti-reflection layer is located on the lower surface of the lower anti-reflection layer.
As mentioned above, the invention provides a large-photosurface superconducting nanowire single-photon detector, which has the following beneficial effects:
the linear part of the superconducting nanowire structure is provided with at least two superconducting nanowires which are arranged in parallel at intervals, so that the total inductance of the device can be reduced, the response speed of the device is improved, the current in the device is improved, and the signal-to-noise ratio of the device is improved;
the superconducting nanowires arranged in parallel at intervals in the linear part are connected through the second connecting part, so that the adverse effect of the nonuniformity of a single superconducting nanowire on the performance of a device can be reduced; by increasing the number of the second connecting parts in the linear part, the pulse phenomenon behind the device can be effectively inhibited;
the part of the superconducting nanowire structure corresponding to the write field splicing part is a second connecting part or a gap between adjacent straight line parts, so that the influence of write field splicing errors on a superconducting nanowire core area can be avoided, and the performance of the large-photosurface superconducting nanowire single-photon detector cannot be ensured.
Drawings
Fig. 1 is a schematic structural diagram of a superconducting nanowire structure of a large-photosurface superconducting nanowire single-photon detector according to an embodiment of the invention.
Fig. 2 is a schematic perspective view of a single photon detector with a large-photosurface superconducting nanowire provided in an embodiment of the invention.
FIG. 3 is a schematic three-dimensional structure diagram of a large-sized photo-sensitive superconducting nanowire single photon detector with a single-layer superconducting nanowire structure according to a second embodiment of the present invention.
FIG. 4 is a schematic cross-sectional view of a large-sized photo-sensitive superconducting nanowire single photon detector with a single-layer superconducting nanowire structure according to a second embodiment of the present invention.
FIG. 5 is a schematic cross-sectional view of a large-sized photo-sensitive superconducting nanowire single photon detector with a three-layered superconducting nanowire structure according to a second embodiment of the present invention.
Fig. 6 is a schematic perspective view of a single photon detector with a large-photosurface superconducting nanowire according to a third embodiment of the present invention.
Fig. 7 is a schematic perspective view of a single photon detector with a large-photosurface superconducting nanowire provided in the fourth embodiment of the invention.
Fig. 8 is a schematic perspective view of a single photon detector with a large-photosurface superconducting nanowire provided in the fifth embodiment of the invention.
Fig. 9 is a schematic perspective view of a single photon detector with a large-photosurface superconducting nanowire provided in the sixth embodiment of the invention.
Fig. 10 is a schematic perspective view illustrating a single photon detector of a large-photosurface superconducting nanowire provided in the seventh embodiment of the invention.
Description of the element reference numerals
1 superconducting nanowire structure
11 straight line part
111 superconductive nanowire
12 first connection part
13 second connecting part
14 write field splice
2 substrate
3 reflecting mirror
4 dielectric layer
5 optical cavity structure
6 upper anti-reflection layer
7 lower anti-reflection layer
8 optical film antireflection layer
81 silicon dioxide layer
82 silicon layer
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 10. It should be noted that the drawings provided in the present embodiment are only schematic and illustrate the basic idea of the present invention, and although the drawings only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation, the form, quantity and proportion of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
Example one
Referring to fig. 1 and fig. 2, the present embodiment provides a large-photosurface superconducting nanowire single photon detector, where the large-photosurface superconducting nanowire single photon detector includes at least one layer of superconducting nanowire structure 1, and the superconducting nanowire structure 2 is formed by performing field-writing stitching exposure for multiple times based on an electron beam exposure process, where the superconducting nanowire structure 1 includes: a plurality ofThe straight line parts 11 comprise at least two superconducting nanowires 111 arranged in parallel at intervals; a plurality of first connection portions 12, wherein the first connection portions 12 sequentially connect the linear portions end to end in a meandering manner, and the superconducting nanowires 111 in each linear portion 11 are connected via the first connection portions 12; the second connection parts 13 are located in the linear part 11, are located between the superconducting nanowires 111 arranged in the linear part 11 in parallel at intervals, and connect the adjacent superconducting nanowires 111 in the linear part 11; the second connecting parts 13 positioned in the same straight line part 11 are arranged in parallel at intervals; along the direction parallel to the straight line part 11, the part of the superconducting nanowire structure 1 corresponding to the write field splice 14 is the second connection part 13; along the direction perpendicular to the straight line portions 11, the portion of the superconducting nanowire structure 1 corresponding to the write field splice 14 is a gap between adjacent straight line portions 11. When an electron beam exposure process is used for preparing a large-area superconducting nanowire single photon detector, because the writing field size of an electron beam exposure device is limited (namely the size of an electron gun scanning area in the electron beam exposure device is limited), the exposure of the whole area can be realized only through the splicing of writing fields for many times; the portion of the superconducting nanowire structure 1 of the present invention corresponding to the write field junction 14 of each write field of the electron beam exposure apparatus is the second connection portion 13 or the gap between the adjacent straight portions 11, these regions are all non-core regions of the superconducting nanowire structure 1 (the core region of the superconducting nanowire structure 1 is the superconducting nanowire 111), and when the electron beam exposure process is used for performing multi-writing field splicing exposure, even though a writing field splicing error exists during each writing field splicing, the writing field splicing error is located in a non-core area of the superconducting nanowire structure 1, the writing field splicing error cannot cause the superconducting nanowire 111 to deviate, and the writing field splicing error cannot affect a core area of the superconducting nanowire structure 1 (namely, the superconducting nanowire 11 in the superconducting nanowire structure 1), so that the performance of the large-photosurface superconducting nanowire single photon detector can be ensured. Furthermore, the invention provides a superconducting nanowire structure 1The straight line parts 11 are provided with at least two superconducting nanowires 111 arranged in parallel at intervals, and the superconducting nanowires 111 in each straight line part 11 are connected through the first connecting part 12, when one of the superconducting nanowires 111 absorbs photons and turns into a normal state, the current flowing through the superconducting nanowire 111 is redistributed on the adjacent superconducting nanowire 111, so that the current flowing through the superconducting nanowire 111 exceeds a critical current to cause the quenching of the whole device, namely the current in the device is improved, the signal-to-noise ratio of the device is improved, and the error count is reduced; meanwhile, compared with devices in the prior art, the dynamic inductor in the large-photosurface superconducting nanowire single-photon detector is 1/N of that of the existing superconducting nanowire single-photon detector with the same area2The number of the superconducting nanowires 11 arranged in parallel at intervals in the linear portion 11 is N, and N can be any integer greater than or equal to 2, that is, the large-photosurface superconducting nanowire single photon detector can reduce the total inductance of the device and improve the response speed of the device.
It should be noted that the number of the corresponding write field joints 14 on the superconducting nanowire structure 1 may be any possible value according to the size of the superconducting nanowire structure 1, and is not limited herein; only the four write fields for the superconducting nanowire structure 1 are illustrated in fig. 1 (i.e. the four write field junctions 14 for the superconducting nanowire structure 1 in fig. 1).
As an example, the first connection portion 12 and the second connection portion 13 are both superconducting nanowires.
As an example, the material of the superconducting nanowire 111 includes NbN, Nb, TaN, NbTiN, or WSi.
As an example, the width of the superconducting nanowire 111 may be 50 nm to 150 nm, and the thickness of the superconducting nanowire 111 may be 5 nm to 10 nm. Preferably, in this embodiment, the material of the superconducting nanowire 111 is NbN, the width of which is 100nm, and the thickness of which is 7 nm.
As an example, the outline of the superconducting nanowire structure 1 may be set according to actual needs, and preferably, in this embodiment, the outline of the superconducting nanowire 1 may be rectangular (as shown in fig. 1), circular, elliptical, or the like, that is, the distribution area of the superconducting nanowire structure 1 may be rectangular, circular, or elliptical.
By way of example, the large-photosurface superconducting nanowire single photon detector further comprises a substrate 2, and the superconducting nanowire structure 1 is located on the substrate 2. The substrate 2 comprises a silicon substrate, an MgO substrate or a sapphire substrate, and the thickness of the substrate 2 is 300-500 microns. In the present embodiment, the substrate 2 is a silicon substrate with a thickness of 400 μm. Of course, other types of substrates 2 or thicknesses may be suitable for use with the present invention, and thus, are not limited to the examples listed herein.
As an example, the large-photosurface superconducting nanowire single photon detector further comprises a reflector 3, the reflector 3 is located on the upper surface of the substrate 2 and is located between the substrate 2 and the superconducting nanowire structure 1, that is, the reflector 3 is located on the upper surface of the substrate 2, and the superconducting nanowire structure 1 is located on the upper surface of the reflector 3.
In one example, the material of the reflector 3 may be Ag, Au, Al or 1/4 dielectric material with thickness equal to the equivalent wavelength of the incident light; preferably, in this embodiment, the material of the reflecting mirror 3 is Au, and the thickness thereof is 100 nm. Of course, other types of reflective materials and thicknesses are also suitable for use in the present invention, and are not limited thereto.
In another example, the reflector 3 may also be an alternately laminated SiO2A thin film layer and a Si thin film layer. The reflector 3 may be the SiO2A thin film layer on the surface of the substrate 2, and a Si thin film layer on the SiO2A thin film layer is arranged above the substrate; the Si thin film layer may be formed on the surface of the substrate 2, and the SiO may be formed on the surface of the substrate2The thin film layer is located above the Si thin film layer.
In yet another example, the mirror 3 may also be an alternately laminated SiO2Film layer and TiO2A thin film layer; the reflector 3 may be the SiO2Layer position of filmOn the surface of the substrate 2, the TiO2A thin film layer located on the SiO2A thin film layer is arranged above the substrate; may also be said TiO2A thin film layer on the surface of the substrate 2, the SiO2A thin film layer on the TiO2And (5) above the thin film layer.
In yet another example, the mirrors 3 are alternately laminated SiO2Thin film layer and Ta2O5A thin film layer; the reflector 11 may be the SiO2A thin film layer on the surface of the substrate 2, Ta2O5A thin film layer located on the SiO2A thin film layer is arranged above the substrate; may also be said Ta2O5A thin film layer on the surface of the substrate 2, the SiO2A thin film layer located on the Ta2O5And (5) above the thin film layer.
As an example, the number of the thin film layers alternately stacked in the reflector 3 may be set according to actual requirements, and in this embodiment, the number of the thin film layers alternately stacked in the reflector 3 is 26, that is, the reflector 3 includes 13 SiO layers alternately stacked in sequence2A thin film layer and 13 layers of the Si thin film layer.
By way of example, in the mirror 3, the thickness of each thin film layer is equal to 1/4, which is the equivalent wavelength of the incident light within that layer.
The preparation method of the large-photosurface superconducting nanowire single photon detector comprises the following steps:
1) providing the substrate 2;
2) forming a superconducting nanowire material layer on the substrate 2;
3) forming a photoresist layer on the superconducting nanowire material layer;
4) performing field-writing splicing exposure on the superconducting nanowire material layer for multiple times by adopting an electron beam exposure process so as to pattern the photoresist layer, wherein the position and the shape of the superconducting nanowire structure 1 are defined by the patterned photoresist layer;
5) and etching the superconducting nanowire material layer according to the patterned photoresist layer to form the superconducting nanowire structure 1.
As an example, a step of forming the reflecting mirror 3 on the upper surface of the substrate 2 is further included between the step 1) and the step 2), and in the step 2), the superconducting nanowire material layer is formed on the upper surface of the reflecting mirror 3.
Example two
Referring to fig. 3 to 5 in conjunction with fig. 1 to 2, the present embodiment further provides a large-photosurface superconducting nanowire single photon detector, and the large-photosurface superconducting nanowire single photon detector in the present embodiment includes: a substrate 2; n layers of dielectric layers 4, wherein the N layers of dielectric layers 4 and the N layers of superconducting nanowire structures 1 are sequentially and alternately stacked on the upper surface of the substrate 2, the first layer of dielectric layer 4 is located on the upper surface of the substrate 2, and N is an integer larger than or equal to 1.
As an example, the specific structure of the superconducting nanowire structure 1 is completely the same as the specific structure of the superconducting nanowire structure 1 described in the first embodiment, and please refer to the first embodiment specifically, which will not be described herein again.
As shown in fig. 3 and 4, when N is 1, the large-photosurface superconducting nanowire single photon detector includes a dielectric layer 4 and a superconducting nanowire structure 1, the dielectric layer 4 is located on the surface of the substrate 2, and the superconducting nanowire structure 1 is located on the upper surface of the dielectric layer 4.
It should be further noted that, taking N ═ 3 in fig. 5 as an example, as can be seen from fig. 5, a first layer of the dielectric layer 4 is located on the surface of the substrate 2, a first layer of the superconducting nanowire structure 1 is located on the surface of the first layer of the dielectric layer 4, a second layer of the dielectric layer 4 is located on the surface of the first layer of the dielectric layer 4 and completely covers the first layer of the superconducting nanowire structure 1, a second layer of the superconducting nanowire structure 1 is located on the surface of the second layer of the dielectric layer 4, a third layer of the dielectric layer 4 is located on the surface of the second layer of the dielectric layer 4 and completely covers the second layer of the superconducting nanowire structure 1, and a third layer of the superconducting nanowire structure 1 is located on the surface of the. When N is an integer greater than 3, the dielectric layer 4 and the superconducting nanowire structure 1 are stacked in the above manner to form a stacked structure.
For example, the number of the specific layers of the dielectric layer 4 and the superconducting nanowire structure 1 may be set according to actual needs, for example, the number of the specific layers of the dielectric layer 4 and the superconducting nanowire structure 1 may be 1 layer, 2 layers, 3 layers, 4 layers, 5 layers, 10 layers, 15 layers, 20 layers, or the like, as long as the number of the layers of the dielectric layer 4 and the superconducting nanowire structure 1 is greater than or equal to 1 layer, and the specific number of the layers is not limited. When N is larger than or equal to 2, the absorption of two or more layers of superconducting nanowires can be realized, so that the high-efficiency absorption bandwidth of the large-photosurface superconducting nanowire single photon detector is expanded, and the absorption efficiency is higher.
As an example, the material of the dielectric layer 4 may be, but is not limited to, SiO2The thickness of the dielectric layer 4 may be set according to actual needs, and is not limited herein.
The preparation method of the large-photosurface superconducting nanowire single photon detector comprises the following steps:
1) providing the substrate 2;
2) forming a dielectric layer 4 on the upper surface of the substrate 2;
3) forming a layer of superconducting nanowire material layer on the upper surface of the dielectric layer 4;
4) forming a photoresist layer on the superconducting nanowire material layer;
5) performing field-writing splicing exposure on the superconducting nanowire material layer for multiple times by adopting an electron beam exposure process so as to pattern the photoresist layer, wherein the position and the shape of the superconducting nanowire structure 1 are defined by the patterned photoresist layer;
6) and etching the superconducting nanowire material layer according to the patterned photoresist layer to form a layer of the superconducting nanowire structure 1.
The structures prepared in the above steps 1) to 6) are shown in fig. 3 and 4.
As an example, when the number of layers of the dielectric layer 4 and the superconducting nanowire structure 1 in the large-photosurface superconducting nanowire single photon detector is at least two, the following steps are further included after the step 6):
7) forming another layer of the dielectric layer 4 on the upper surface of the dielectric layer 4;
8) forming another superconducting nanowire material layer on the upper surface of the dielectric layer 4;
9) forming another photoresist layer on the superconducting nanowire material layer;
10) performing field-writing splicing exposure on the superconducting nanowire material layer for multiple times by adopting an electron beam exposure process so as to pattern the photoresist layer, wherein the position and the shape of the superconducting nanowire structure 1 are defined by the patterned photoresist layer;
11) and etching the superconducting nanowire material layer according to the patterned photoresist layer to form another layer of the superconducting nanowire structure 1.
As an example, after step 11), the method further comprises the step of repeating steps 7) to 11) at least once.
EXAMPLE III
Referring to fig. 6, the embodiment further provides a large-photosurface superconducting nanowire single-photon detector, and the specific structure of the large-photosurface superconducting nanowire single-photon detector is substantially the same as that of the large-photosurface superconducting nanowire single-photon detector described in the second embodiment, and the difference between the large-photosurface superconducting nanowire single-photon detector and the large-photosurface superconducting nanowire single-photon detector is as follows: the large-photosurface superconducting nanowire single photon detector in the embodiment is additionally provided with the reflecting mirror 3 on the basis of the large-photosurface superconducting nanowire single photon detector in the embodiment II. The specific structure of the mirror 3 of the large-photosurface superconducting nanowire single photon detector in this embodiment is the same as that of the mirror 3 of the large-photosurface superconducting nanowire single photon detector in the first embodiment, and specific reference is made to the first embodiment, which will not be described herein again.
It should be noted that, in fig. 6, only the dielectric layer 4 and the superconducting nanowire structure 1 in the large-photosurface superconducting nanowire single photon detector are taken as an example. In practice, the number of layers of the dielectric layer 4 and the superconducting nanowire structure 1 may be set as described in the second embodiment.
Compared with the preparation method of the large-photosurface superconducting nanowire single photon detector in the second embodiment, the preparation method of the large-photosurface superconducting nanowire single photon detector in the second embodiment is characterized in that a step of forming a reflector 3 on the upper surface of the substrate 2 is additionally arranged between the step 1) and the step 2), and the dielectric layer 4 in the step 2) is formed on the upper surface of the reflector 3.
Example four
Referring to fig. 7, the present embodiment further provides a large-photosurface superconducting nanowire single-photon detector, which includes: a substrate 2; a superconducting nanowire structure 1 located on the substrate 2; the optical cavity structure 5 is positioned on the upper surface of the substrate 2, and the optical cavity structure 5 completely covers the superconducting nanowire structure 1; and the reflector 3 is positioned on the upper surface of the optical cavity body structure 5.
As an example, the specific structure of the superconducting nanowire structure 1 is completely the same as the specific structure of the superconducting nanowire structure 1 described in the first embodiment, and please refer to the first embodiment specifically, which will not be described herein again.
As an example, the material of the optical cavity structure 5 may be silicon dioxide or silicon monoxide; preferably, in this embodiment, the material of the optical cavity structure 5 is silicon monoxide; the thickness of the optical cavity body structure 5 is equal to 1/4 of the equivalent wavelength of the incident light in the optical cavity body structure 5.
As an example, the mirror 3 may be a SiO including an alternate stack2The reflector comprising a thin film layer and a Si thin film layer may be formed of SiO alternately laminated2Film layer and TiO2The reflector of the thin film layer can also be SiO including alternate lamination2Thin film layer and Ta2O5The reflector of the thin film layer can also be an Au thin film layer reflector, an Ag thin film layer reflector or an Al thin film layer reflector. Preferably, in this embodiment, the material of the reflecting mirror 3 is Au, and the thickness thereof is 100 nm. Of course, other types of reflective materials and thicknesses are also suitable for use in the present invention, and are not limited thereto.
The preparation method of the large-photosurface superconducting nanowire single photon detector comprises the following steps:
1) providing the substrate 2;
2) forming a superconducting nanowire material layer on the substrate 2;
3) forming a photoresist layer on the superconducting nanowire material layer;
4) performing field-writing splicing exposure on the superconducting nanowire material layer for multiple times by adopting an electron beam exposure process so as to pattern the photoresist layer, wherein the position and the shape of the superconducting nanowire structure 1 are defined by the patterned photoresist layer;
5) etching the superconducting nanowire material layer according to the patterned photoresist layer to form the superconducting nanowire structure 1;
6) forming the optical cavity structure 5 on the upper surface of the substrate 2, wherein the optical cavity structure 5 completely covers the superconducting nanowire structure 1;
7) the reflector 3 is formed on the upper surface of the optical cavity structure 5.
EXAMPLE five
Referring to fig. 8, the embodiment further provides a large-photosurface superconducting nanowire single-photon detector, and the specific structure of the large-photosurface superconducting nanowire single-photon detector in the embodiment is substantially the same as that of the large-photosurface superconducting nanowire single-photon detector in the fourth embodiment, and the difference between the two is that: in the large-photosurface superconducting nanowire single photon detector described in the fourth embodiment, an optical thin film antireflection layer 8 is additionally arranged on the basis of the large-photosurface superconducting nanowire single photon detector, and the optical thin film antireflection layer 8 is located on the lower surface of the substrate 2.
As an example, the optical film antireflection layer 8 may have a single-layer structure or a multi-layer structure, and in this embodiment, preferably, the optical film antireflection layer 8 may have a stacked structure in which silicon dioxide layers 81 and silicon layers 82 are alternately stacked (as shown in fig. 8), a stacked structure in which silicon monoxide layers and silicon layers are alternately stacked, a stacked structure in which silicon dioxide layers and silicon monoxide layers are alternately stacked, a stacked structure in which silicon dioxide and tantalum pentoxide are alternately stacked, or a stacked structure in which silicon dioxide and titanium dioxide are alternately stacked.
Compared with the preparation method of the large-photosurface superconducting nanowire single photon detector described in the fourth embodiment, the preparation method of the large-photosurface superconducting nanowire single photon detector of the fourth embodiment further comprises the step of forming the optical thin film antireflection layer 8 on the lower surface of the substrate 2 after the step 7) in the fourth embodiment.
EXAMPLE six
Referring to fig. 9, the embodiment further provides a large-photosurface superconducting nanowire single-photon detector, and the specific structure of the large-photosurface superconducting nanowire single-photon detector in the embodiment is substantially the same as that of the large-photosurface superconducting nanowire single-photon detector in the fourth embodiment, and the difference between the two structures is as follows: the large-photosurface superconducting nanowire single photon detector in the embodiment is additionally provided with an upper anti-reflection layer 6 and a lower anti-reflection layer 7 on the basis of the large-photosurface superconducting nanowire single photon detector in the fourth embodiment, wherein the upper anti-reflection layer 6 is positioned on the upper surface of the substrate 2, and the lower anti-reflection layer 7 is positioned on the lower surface of the substrate 2.
Compared with the preparation method of the large-photosurface superconducting nanowire single photon detector in the fourth embodiment, the preparation method of the large-photosurface superconducting nanowire single photon detector in the fourth embodiment is characterized in that a step of forming an upper anti-reflection layer 6 on the upper surface of the substrate 2 is additionally arranged between the step 1) and the step 2), and the dielectric layer 4 in the step 2) is formed on the upper surface of the upper anti-reflection layer 6; after step 7) in the fourth embodiment, the method further includes a step of forming the lower anti-reflection layer 7 on the lower surface of the substrate 2.
EXAMPLE seven
Referring to fig. 10, the embodiment further provides a large-photosurface superconducting nanowire single-photon detector, and the specific structure of the large-photosurface superconducting nanowire single-photon detector in the embodiment is substantially the same as that of the large-photosurface superconducting nanowire single-photon detector in the sixth embodiment, and the difference between the two structures is as follows: in the large-photosurface superconducting nanowire single photon detector described in the sixth embodiment, an optical thin film antireflection layer 8 is additionally arranged on the basis of the large-photosurface superconducting nanowire single photon detector, and the optical thin film antireflection layer 8 is located on the lower surface of the lower antireflection layer 7.
As an example, the optical film antireflection layer 8 may have a single-layer structure or a multi-layer structure, and in this embodiment, preferably, the optical film antireflection layer 8 may have a stacked structure in which silicon dioxide layers 81 and silicon layers 82 are alternately stacked (as shown in fig. 10), a stacked structure in which silicon monoxide layers and silicon layers are alternately stacked, a stacked structure in which silicon dioxide layers and silicon monoxide layers are alternately stacked, a stacked structure in which silicon dioxide and tantalum pentoxide are alternately stacked, or a stacked structure in which silicon dioxide and titanium dioxide are alternately stacked.
Compared with the preparation method of the large-photosurface superconducting nanowire single photon detector described in the fourth embodiment, the preparation method of the large-photosurface superconducting nanowire single photon detector disclosed in the sixth embodiment further comprises the step of forming the optical thin film antireflection layer 8 on the lower surface of the lower antireflection layer 7 after forming the lower antireflection layer 7 on the lower surface of the substrate 2.
As described above, the present invention provides a large-photosurface superconducting nanowire single photon detector, which includes at least one layer of superconducting nanowire structure formed by performing field-writing splicing exposure for multiple times based on an electron beam exposure process, wherein the superconducting nanowire structure includes: the superconducting nanowire array comprises a plurality of linear parts arranged in parallel at intervals and a plurality of superconducting nanowires arranged in parallel at intervals, wherein each linear part comprises at least two superconducting nanowires arranged in parallel at intervals; the first connecting parts connect the linear parts end to end in sequence in a winding shape, and the superconducting nanowires in the linear parts are connected through the first connecting parts; the second connecting parts are positioned in the linear part, positioned among the superconducting nanowires arranged in the linear part at intervals in parallel and used for connecting the adjacent superconducting nanowires in the linear part; the plurality of second connecting parts positioned in the same linear part are arranged in parallel at intervals; along the direction parallel to the straight line part, the part of the superconducting nanowire structure corresponding to the write field splicing part is the second connecting part; along the direction perpendicular to the straight line parts, the part of the superconducting nanowire structure corresponding to the splicing position of the writing field is a gap between the adjacent straight line parts. The large-photosurface superconducting nanowire single photon detector has the following beneficial effects: the linear part of the superconducting nanowire structure is provided with at least two superconducting nanowires which are arranged in parallel at intervals, so that the total inductance of the device can be reduced, the response speed of the device is improved, the current in the device is improved, and the signal-to-noise ratio of the device is improved; the superconducting nanowires arranged in parallel at intervals in the linear part are connected through the second connecting part, so that the adverse effect of the nonuniformity of a single superconducting nanowire on the performance of a device can be reduced; by increasing the number of the second connecting parts in the linear part, the pulse phenomenon behind the device can be effectively inhibited; the part of the superconducting nanowire structure corresponding to the write field splicing part is a second connecting part or a gap between adjacent straight line parts, so that the influence of write field splicing errors on a superconducting nanowire core area can be avoided, and the performance of the large-photosurface superconducting nanowire single-photon detector cannot be ensured.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (10)
1. The large-photosurface superconducting nanowire single photon detector is characterized by comprising at least one layer of superconducting nanowire structure, wherein the superconducting nanowire structure is formed by performing field-writing splicing exposure for multiple times based on an electron beam exposure process, and the superconducting nanowire structure comprises:
the superconducting nanowire array comprises a plurality of linear parts which are arranged in parallel at intervals, wherein each linear part comprises at least two superconducting nanowires which are arranged in parallel at intervals;
the first connecting parts connect the linear parts end to end in sequence in a winding shape, and the superconducting nanowires in the linear parts are connected through the first connecting parts;
the second connecting parts are positioned in the linear part, positioned among the superconducting nanowires arranged in the linear part at intervals in parallel and used for connecting the adjacent superconducting nanowires in the linear part; the plurality of second connecting parts positioned in the same linear part are arranged in parallel at intervals;
the first connecting part and the second connecting part are both superconducting nanowires;
along the direction parallel to the straight line part, the part of the superconducting nanowire structure corresponding to the write field splicing part is the second connecting part; along the direction perpendicular to the straight line parts, the part of the superconducting nanowire structure corresponding to the splicing position of the writing field is a gap between the adjacent straight line parts;
the length direction of the second connecting portion is perpendicular to the length direction of the superconducting nanowire in the linear portion.
2. The large photosurface superconducting nanowire single photon detector of claim 1, which is characterized in that: the outline of the superconducting nanowire structure is rectangular, circular or elliptical.
3. The large photosurface superconducting nanowire single photon detector according to any one of claims 1-2, wherein: the large-photosurface superconducting nanowire single photon detector also comprises a substrate, and the superconducting nanowire structure is positioned on the substrate.
4. The large photosurface superconducting nanowire single photon detector of claim 3, wherein: the large-photosurface superconducting nanowire single photon detector further comprises a reflector, wherein the reflector is positioned on the upper surface of the substrate and between the substrate and the superconducting nanowire structure.
5. The large photosurface superconducting nanowire single photon detector according to any one of claims 1-2, wherein: the number of layers of the superconducting nanowire structure is N, and the large-photosurface superconducting nanowire single-photon detector further comprises:
a substrate;
the N dielectric layers and the N superconducting nanowire structures are sequentially and alternately stacked on the upper surface of the substrate, the first dielectric layer is located on the upper surface of the substrate, and N is an integer larger than or equal to 1.
6. The large photosurface superconducting nanowire single photon detector of claim 5, wherein: the large-photosurface superconducting nanowire single photon detector further comprises a reflector, and the reflector is located between the substrate and the first layer of the dielectric layer.
7. The large photosurface superconducting nanowire single photon detector according to any one of claims 1-2, wherein: the large-photosurface superconducting nanowire single photon detector further comprises:
a substrate;
an optical cavity structure located on the upper surface of the substrate and completely covering the superconducting nanowire structure;
a mirror located on an upper surface of the optical cavity structure.
8. The large photosurface superconducting nanowire single photon detector of claim 7, wherein: the large-photosurface superconducting nanowire single photon detector further comprises an optical film anti-reflection layer, and the optical film anti-reflection layer is located on the lower surface of the substrate.
9. The large photosurface superconducting nanowire single photon detector of claim 7, wherein: an upper anti-reflection layer is further arranged on the upper surface of the substrate, and a lower anti-reflection layer is further arranged on the lower surface of the substrate.
10. The large photosurface superconducting nanowire single photon detector of claim 9, wherein: the large-photosurface superconducting nanowire single photon detector further comprises an optical film anti-reflection layer, and the optical film anti-reflection layer is located on the lower surface of the lower anti-reflection layer.
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