CN104752534A - Superconductive nanowire single-photon detector and manufacturing method thereof - Google Patents
Superconductive nanowire single-photon detector and manufacturing method thereof Download PDFInfo
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- 238000000034 method Methods 0.000 claims abstract description 20
- 239000010408 film Substances 0.000 claims description 36
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- 239000010936 titanium Substances 0.000 claims description 34
- 229910052719 titanium Inorganic materials 0.000 claims description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 31
- 238000001259 photo etching Methods 0.000 claims description 31
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 claims description 23
- 239000003292 glue Substances 0.000 claims description 16
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 16
- 239000010931 gold Substances 0.000 claims description 16
- 229910052737 gold Inorganic materials 0.000 claims description 16
- 238000001514 detection method Methods 0.000 claims description 15
- 238000010894 electron beam technology Methods 0.000 claims description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 13
- 238000005229 chemical vapour deposition Methods 0.000 claims description 12
- 238000002360 preparation method Methods 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 238000001020 plasma etching Methods 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000013461 design Methods 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 abstract description 10
- 238000001459 lithography Methods 0.000 abstract 1
- 238000005485 electric heating Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 239000000835 fiber Substances 0.000 description 3
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- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 238000005057 refrigeration Methods 0.000 description 3
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- 238000011161 development Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000001917 fluorescence detection Methods 0.000 description 1
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- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
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Abstract
The invention discloses a superconductive nanowire single-photon detector. The superconductive nanowire single-photon detector consists of N superconductive nanowire units which are connected in series, N parallel resistors of different resistance values and an optical resonator, wherein the N resistors of different resistance values are respectively connected with two ends of the N superconductive nanowire units in parallel; the optical resonator covers the upper layers of the N superconductive nanowire units which are connected in series. The superconductive nanowire single-photon detector not only can realize photon number discrimination, but also has a spatial discrimination capability. The invention also discloses a method for manufacturing the superconductive nanowire single-photon detector, wherein only is once electronic beam lithography needed to be carried out on nanowire patterns in the whole technological process, and thus the manufacturing cost of the superconductive nanowire single-photon detector is effectively reduced.
Description
Technical field
The present invention relates to superconducting nano-wire single-photon detector and preparation method thereof, specifically can differentiate and the superconducting nano-wire single-photon detector and preparation method thereof of High detect efficiency of number of photons resolution implementation space simultaneously, belong to single photon detection and pole weak light detection technical field, be applicable to the single-photon detecting survey technology needing to realize photon resolution at visible ray and infrared band.
Background technology
Single-photon detector is a kind of highly sensitive ultra-low noise device, by detecting and count the detection realized pole weak target signal to the single photon of incidence.Therefore, high performance single-photon detector has demand widely in emerging weak light detection technical applications such as quantum communications, quantum calculation, integrated circuit detection, molecular fluorescence detections.
Traditional single-photon detector has photomultiplier, avalanche photodide etc., but these single-photon detectors are not high near infrared band detection efficient, and repetition rate is generally lower, therefore can not meet the demand in the fields such as quantum communication.Along with the development of thin-film technique and micro-processing technology, and the active demand of single-photon detecting survey technology, superconducting nano-wire single-photon detecting survey technology arises at the historic moment, this technology has the advantages such as highly sensitive, repetition rate is fast, dark counting is low, demonstrates excellent single photon detection ability at visible ray and infrared band.
But superconducting nano-wire single-photon detector traditional at present operates mainly in nonlinear model, namely when detection of photons, number and the position of incident photon cannot be differentiated.Such as, in order to meet the requirement of the special applications that some needs implementation spaces are differentiated and number of photons is differentiated, the characteristic present etc. of linear optics quantum calculation, non-classical light source, need the structure improving superconducting nano-wire single-photon detector.
At present, in order to realize the function that number of photons is differentiated, following three kinds of schemes are mainly contained:
One is superconducting nano-wire single-photon detector array.But the reading circuit system that superconducting nano-wire single-photon detector array request one is very complicated, namely each superconducting nano-wire single-photon detector needs a reading circuit be made up of amplifier, biasing circuit etc.;
Two is nano wire photon resolved detector in parallel.The reading circuit of nano wire photon resolved detector in parallel is fairly simple, but leakage current is comparatively large, seriously limits the detection efficient of this device and the maximum number of resolving photon;
Three is series connection nano wire photon resolved detector.The reading circuit of series connection nano wire photon resolved detector is fairly simple, and the maximum number of its detection efficient and resolving photon all can not be subject to the impact of leakage current, but does not possess the ability of spatial discrimination, and detection efficient is not high.
Summary of the invention
Goal of the invention: the object of the invention is to provide superconducting nano-wire single-photon detector and preparation method thereof, can differentiate and number of photons resolution implementation space, detection efficient is high simultaneously.
To achieve these goals, the first technical scheme that the present invention adopts is a kind of superconducting nano-wire single-photon detector, be made up of the superconducting nano-wire unit of N number of series connection, the parallel resistance of N number of different resistance and optical resonator, the resistance of described N number of different resistance is connected in parallel on the two ends of N number of superconducting nano-wire unit respectively, and described optical resonator covers the superconducting nano-wire unit upper strata of N number of series connection.
Further, described N be more than or equal to 2 any integer value.
Further, the parallel resistance of described N number of different resistance is formed by titanium film preparation, and the thickness of described titanium film is identical, is obtained the parallel resistance of different resistance by the length-width ratio changing electric resistance structure, resistance meets following proportionate relationship: when N gets 2, and resistance is 1/2:1; When N gets 3, resistance is 1/4:1/2:1; When N gets 4, resistance is 1/4:1/2:1:2; When N gets any integer value being more than or equal to 5, resistance is 1/4:3/8:1/2:1:2:4: ...: 2
n-4proportionate relationship.
Further, described optical resonator is by the silica (SiO of lower floor
x) the golden reflector superposition on dielectric layer and upper strata forms, the thickness of described silicon oxide dielectric layer is λ/(4 η) with the pass of detection wavelength X, and η is the refractive index of silica.Further, the thickness of described silicon oxide dielectric layer is 240nm, and the thickness in described golden reflector is 100nm.
The second technical scheme that the present invention adopts is a kind of method preparing superconducting nano-wire single-photon detector as above, comprises the following steps:
The first step, magnetron sputtering prepares niobium nitride film: have 250nm thickness silicon dioxide (SiO in two-sided growth
2) silicon (Si) substrate on growth thickness be the niobium nitride film of 6-8nm;
Second step, electron beam exposure makes nano wire figure: the nano wire figure that design is wriggled, and nanowire width is 80nm, and duty ratio is 1/3, and the entirety that nano wire covers is in square; Spin coating electron sensitive resist, writes out nano wire figure by electron beam exposure, then obtains nano wire by reactive ion etching, and etch period is 30s;
3rd step, electrode is done in photoetching: by double-layer glue photoetching making gold electrode mask, and first grow titanium film, regrowth gold thin film, finally separates electrode;
4th step, etches unnecessary niobium nitride: etch mask is done in the photoetching of individual layer glue, and reactive ion etching removes unnecessary niobium nitride film, and etch period is 45s, finally removes photoresist;
5th step, titanium resistance is done in photoetching: resistance mask is done in double-layer glue photoetching, prepares by the growth time controlling titanium the titanium film that sheet resistance is 100 Ω, finally peels off the titanium resistance obtaining different resistance;
6th step, optical resonator is done in photoetching: the mask of optical resonator is done in double-layer glue photoetching, uses chemical vapour deposition (CVD) to prepare silicon oxide dielectric layer, then grow golden reflector on described silicon oxide dielectric layer, finally separate optical resonator.
Further, the thickness of described titanium film is 10nm, and the thickness of described gold thin film is 100nm.
Further, the resistance of the titanium resistance of described different resistance meets following proportionate relationship: when N gets 2, and resistance is 1/2:1; When N gets 3, resistance is 1/4:1/2:1; When N gets 4, resistance is 1/4:1/2:1:2; When N gets any integer value being more than or equal to 5, resistance is 1/4:3/8:1/2:1:2:4: ...: 2
n-4proportionate relationship.
Further, the thickness of described silicon oxide dielectric layer is 240nm, and the thickness in described golden reflector is 100nm.
Further, in described 6th step, chemical vapour deposition (CVD) is used to prepare silicon oxide dielectric layer under 50 DEG C of low temperature environments.
Further, in described 5th step, the growth time of titanium film is 50s.
Beneficial effect: the present invention has carried out suitable improvement on the basis of series connection nano wire photon resolved detector principle, series connection nano wire photon resolved detector is made to realize also having possessed the ability of spatial discrimination while number of photons is differentiated, and by increasing optical resonator structures on the upper strata of device, effectively improve its detection efficient.In addition, be also optimized its preparation process, only need to carry out once electron beam exposure, all the other techniques all realize by photoetching, decrease number of times and the time of electron beam exposure, effectively reduce the preparation cost of device.
Accompanying drawing explanation
Fig. 1 is the structural representation of the series connection nano wire photon resolved detector of 6 resistance.
Fig. 2 is the reading circuit schematic diagram of series connection nano wire photon resolved detector
Fig. 3 is the equivalent circuit theory figure of series connection nano wire photon resolved detector.
Fig. 4 is the electric heating simulation result of the series connection nano wire photon resolved detector equivalent resistance of 3 resistance.
Fig. 5 is the electric heating simulation result of the series connection nano wire photon resolved detector impulse response of 3 resistance.
Fig. 6 is the electric heating simulation result of the series connection nano wire photon resolved detector equivalent resistance of 4 resistance.
Fig. 7 is the electric heating simulation result of the series connection nano wire photon resolved detector impulse response of 4 resistance.
Fig. 8 is the process chart of series connection nano wire photon resolved detector.
Fig. 9 is the measuring system schematic diagram of series connection nano wire photon resolved detector.
Embodiment
The superconducting nano-wire single-photon detector of the High detect efficiency that implementation space is differentiated and number of photons the is differentiated while of the invention discloses a kind of, parallel resistance and optical resonator three part of the superconducting nano-wire unit of being connected by N section, N number of different resistance form.The resistance of N number of different resistance is connected in parallel on the two ends of N section superconducting nano-wire unit respectively, wherein N desirable be more than or equal to 2 any integer value.When resistance meets the proportionate relationship of 1/4:3/8:1/2:1:2:4, namely realize the spatial discrimination of incident photon and number of photons are differentiated by detecting the amplitude exporting pulse.Therefore, the present invention can not only realize number of photons and differentiate, and has also possessed the ability of spatial discrimination simultaneously.In addition, by increasing optical resonator structures on the upper strata of device, its system looks efficiency can also effectively be improved.Present invention also offers a kind of process preparing above-mentioned superconducting nano-wire single-photon detector, whole technological process only needs the electron beam exposure carrying out a nano wire figure, all the other techniques such as electrode, parallel resistance, the isostructural making of optical resonator all realize by photoetching, decrease number of times and the time of electron beam exposure, effectively reduce the preparation cost of device.
Specifically, the superconducting nano-wire single-photon detector of the High detect efficiency that a kind of energy of the present invention implementation space resolution simultaneously and number of photons are differentiated, is made up of the superconducting nano-wire unit of N number of series connection, the parallel resistance of N number of different resistance and optical resonator three part.The superconducting nano-wire wriggled adopts niobium nitride superconducting thin film to be prepared from, and the live width of each section of superconducting nano-wire is 80nm, and duty ratio is 1/3, and length is 400 μm.Parallel resistance is formed by the film preparation of inert metal titanium, and the resistance of N number of different resistance is connected in parallel on N number of series connection superconducting nano-wire unit two ends respectively, wherein N desirable be more than or equal to 2 any integer value.On same device, the thickness of titanium film is identical, and the resistance of different resistance is obtained by the length-width ratio of change resistance, as shown in table 1.Optical resonator covers the upper strata of N number of series connection superconducting nano-wire unit, to improve the system looks efficiency of detector.
In order to realize the spatial discrimination of incident photon and number is differentiated simultaneously, need to ensure each resistance and each resistance superpose mutually after resistance completely different, and at least differ 10 Ω between each resistance, to guarantee to contain the error in micro Process process.For the parallel resistance of 3 different resistances in table 1, need guarantee 1 photon (25 Ω, 50 Ω, 100 Ω), 2 photons (25 Ω+50 Ω, 25 Ω+100 Ω, 50 Ω+100 Ω), each resistance difference that 3 photons (25 Ω+50 Ω+100 Ω) are corresponding, and at least differ 10 Ω between each resistance, corresponding output pulse amplitude is different, thus can realize 3 incident photons and 2
3the resolution of-1=7 kinds of locus.If there is the parallel resistance of 6 different resistances, then can realize 6 incident photons and 2
6the resolution of-1=63 kinds of locus.
By that analogy, suppose the parallel resistance having N number of different resistance, so while N number of photon number is differentiated in realization, can (2 be realized at the most
n-1) resolution of photon incoming position is planted.
Present invention also offers a kind of prepare above-mentioned while implementation space differentiate and the process of superconducting nano-wire single-photon detector of High detect efficiency of number of photons resolution.Only have nano wire figure to need to adopt electron beam exposure to complete in whole technological process, the structures such as electrode, resistance and optical resonator all complete by photoetching, decrease number of times and the time of electron beam exposure, effectively reduce the preparation cost of device.Whole technological process mainly comprises following six steps.
The first step, magnetron sputtering prepares niobium nitride film.250nm thickness silicon dioxide (SiO is had in two-sided growth
2) silicon (Si) substrate on grow niobium nitride film, film thickness is 6-8nm, superconduction critical temperature Tc ≈ 7.0-7.5K, sheet resistance R
square≈ 250-300 Ω.
Second step, electron beam exposure makes nano wire figure.The sinuous nano wire figure of design, live width is 80nm, and duty ratio is 1/3, and nano wire nucleus is 25 μm × 25 μm, and nano wire exposure area is 180 μm × 60 μm.Spin coating electron sensitive resist, writes out nano wire figure by electron beam exposure, then obtains nano wire by reactive ion etching.Etch period is 30s, to ensure the impact eliminating electron beam exposure cull.Require that the line weight etched is even, edge impulse-free robustness.
3rd step, gold electrode is done in photoetching.By double-layer glue photoetching making gold electrode mask, so that the later stage peels off, in order to strengthen the adhesiveness of gold thin film, first grow the titanium film of 10nm, the gold thin film of regrowth 100nm, finally separates gold electrode.
4th step, etches unnecessary niobium nitride.Etch mask is done in the photoetching of individual layer glue, and reactive ion etching removes unnecessary niobium nitride film, and etch period 45s finally will remove photoresist.
5th step, titanium resistance is done in photoetching.Resistance mask is done in double-layer glue photoetching, prepares by the growth time controlling titanium the titanium film that sheet resistance is 100 Ω, and finally peel off the titanium resistance obtaining different resistance, the resistance ratio of titanium resistance meets the proportionate relationship shown in table 1.
6th step, optical resonator is done in photoetching.The mask of optical resonator is done in double-layer glue photoetching, uses chemical vapour deposition (CVD) under 50 DEG C of low temperature environments, prepare the silica (SiO that thickness is 240nm
x) dielectric layer, the golden reflector that regrowth 100nm is thick, finally separates optical resonator.Optical resonator effectively can strengthen the absorption efficiency of series connection nano wire photon resolved detector, thus significantly can improve its system looks efficiency.
By reference to the accompanying drawings the present invention is described in further details.
As shown in Figure 1, be the structural representation of the superconducting nano-wire single-photon detector of the High detect efficiency that implementation space while of a kind of energy is differentiated and number of photons is differentiated.The superconducting nano-wire unit (being called for short " nanowire unit ") 2 being 80nm by 6 (i.e. aforesaid N=6) live widths is composed in series, each nanowire unit two ends resistance in parallel.The resistance of 6 resistance meets the proportionate relationship described in table 1.The material of superconducting nano-wire is the ultra-thin niobium nitride film that 6nm is thick, and parallel resistance is the titanium film of sheet resistance 100 Ω.Each superconducting nano-wire unit is based on the work of tropical island effect principle.Optical resonator 1 covers the upper strata of N number of series connection superconducting nano-wire unit, to improve the system looks efficiency of detector.
As shown in Figure 2, be the operating diagram of the superconducting nano-wire single-photon detector that implementation space while of a kind of is differentiated and number of photons is differentiated.In its course of work, need provide one close to the DC bias current of its critical current (≈ 0.95Ic), this bias current is by DC terminal (DC) access of biased tree (Bias-T).The radio-frequency head (RF) of Bias-T connects low noise amplifier and exports for signal.Rp1, Rp2, Rpn in figure represent the 1st respectively, the 2nd ..., N number of parallel resistance.
As shown in Figure 3, for the equivalent circuit diagram of the superconducting nano-wire single-photon detector that implementation space while of a kind of is differentiated and number of photons is differentiated, each section of superconducting nano-wire can be equivalent to an inductance and to connect a variable resistor, the size of inductance is determined by the dynamic inductance of this section of nano wire, length, the width and thickness etc. of dynamic inductance and nano wire are relevant, variable resistor is that the tropical island effect produced by photon incidence causes, and when not having an incident photon, variable resistor is 0.
When not having photon incident, nano wire is all in superconducting state, and equivalent resistance is 0, and therefore output end voltage is 0.When there being N(1≤N≤6) individual photon is when inciding zones of different respectively, the nano wire absorb photons of corresponding region forms heat island, normality is changed to positive rapidly by superconducting state, generate larger impedance, therefore, electric current is squeezed into parallel resistance, and the pulse amplitude being reflected as output is different, thus can realize the resolution for incident photon number and position.
The electrothermal principle of circuit shown in foundation Fig. 3 and series connection nano wire photon resolved detector, can set up corresponding electricity and calorifics equation.
Electricity equation is
Wherein,
bias current,
the electric current flowing through nano wire,
the electric current flowing through parallel resistance,
parallel resistance,
the equivalent resistance of nano wire,
the equivalent resistance of superconducting state nano wire,
load resistance,
the dynamic inductance of whole section of nano wire,
the dynamic inductance of the nano wire having photo response,
the equivalent capacity of output,
for
the magnitude of voltage at two ends,
for the time.
Calorifics equation is
Wherein,
for current density,
for the temperature of nano wire,
for substrate temperature,
for the thickness of nano wire,
for the resistivity of niobium nitride film,
for the specific heat capacity of niobium nitride film,
for the border heat exchange coefficient between niobium nitride film and substrate,
for the thermal conductivity of niobium nitride,
for the distance that heat island spreads along nano wire.
Electric heating emulation is carried out according to above-mentioned electric heating equation.Initial condition sets: 6nm is thick, the superconducting transition temperature T of the niobium nitride film of live width 100nm
c=7.0K, square resistance R
square=300 Ω, the dynamic inductance L of each section of nano wire
k=100nH, critical current Ic=14 μ A during absolute zero, bias current during 2.0K is 12 μ A, refrigeration machine ambient temperature T
bg=2.0K, the load equivalent of low noise amplifier is 1M Ω.
When there being 3 parallel resistances, the resistance value ratio of 3 resistance can be taken as R
p1: R
p2: R
p3=1/4:1/2:1, getting sheet resistance is 100 Ω, then corresponding resistance value is 25 Ω: 50 Ω: 100 Ω.When incident photon number is respectively 1-3, as shown in Figure 4, itself and incident photon number are approximated to proportionate relationship to the equivalent resistance of nano wire; The incoming position of photon is different, and corresponding output voltage is not identical yet, and the corresponding relation between resistance and position is as shown in table 2, and output pulse amplitude corresponding when the photon of different number incides diverse location as shown in Figure 5.Number and the position thereof of incident photon can be distinguished according to the amplitude of pulse.
When there being 4 parallel resistances, the resistance value ratio of 4 resistance can be taken as R
p1: R
p2: R
p3: R
p4=1/4:1/2:1:2, getting sheet resistance is 100 Ω, then corresponding resistance value is 25 Ω: 50 Ω: 100 Ω: 200 Ω.When incident photon number is respectively 1-4, as shown in Figure 6, itself and incident photon number are approximated to proportionate relationship to the equivalent resistance of nano wire; The incoming position of photon is different, and corresponding output voltage is not identical yet, and the corresponding relation between resistance and position is as shown in table 3, and output pulse amplitude corresponding when the photon of different number incides diverse location as shown in Figure 7.Number and the position thereof of incident photon can be distinguished according to the amplitude of pulse.
As shown in Figure 8, be the process chart of series connection nano wire photon resolved detector.The first step, magnetron sputtering prepares niobium nitride film, has 250nm thickness silicon dioxide (SiO in two-sided growth
2) silicon (Si) substrate on grow niobium nitride film, as shown in (1).
Second step, electron beam exposure makes nano wire figure, the sinuous nano wire figure of design.Spin coating electron sensitive resist PMMA(PolymethylMethacrylate, polymethyl methacrylate), write out nano wire figure by electron beam exposure, as shown in (2), then obtain nano wire by reactive ion etching, as shown in (3).
3rd step, gold electrode is done in photoetching, and by double-layer glue photoetching making gold electrode mask, in order to strengthen the adhesiveness of gold thin film, first grow the titanium film of 10nm, the gold thin film of regrowth 100nm, finally separates gold electrode, as shown in (4).
4th step, etches unnecessary niobium nitride.Etch mask is done in the photoetching of individual layer glue, and reactive ion etching removes unnecessary niobium nitride film, and etch period 45s finally will remove photoresist, as shown in (5).
5th step, titanium resistance is done in photoetching.Resistance mask is done in double-layer glue photoetching, prepares by the growth time controlling titanium the titanium film that sheet resistance is 100 Ω, and finally peel off the titanium resistance obtaining different resistance, the resistance ratio of titanium resistance meets the proportionate relationship shown in table 1, as shown in (6).
6th step, optical resonator is done in photoetching.The mask of optical resonator is done in double-layer glue photoetching, uses chemical vapour deposition (CVD) under 50 DEG C of low temperature environments, prepare the silica (SiO that thickness is 240nm
x) dielectric layer, as shown in (7), the golden reflector that regrowth 100nm is thick, as shown in (8), finally separates optical resonator.
As shown in Figure 9, be the measuring system of series connection nano wire photon resolved detector (PNR-SNSPD), be divided into light path system, Circuits System and GM refrigeration machine three part.Undertaken light by coupled fiber, be placed in GM refrigeration machine the series connection nano wire photon resolved detector after light, temperature is down to 2.0K, can ensure that series connection nano wire photon resolved detector continuous firing is in low temperature environment.Light path system is made up of parts such as picosecond pulse laser source, fiber coupler, light power meter, adjustable light power attenuator and Polarization Controllers.Picosecond pulse laser source can provide the laser signal of 1550nm wavelength, isolate the identical light of two beam powers through fiber coupler, a road connects light power meter, for monitoring incident optical power, one tunnel connects adjustable light power attenuator, through Polarization Controller access series connection nano wire photon resolved detector.Circuits System comprises the compositions such as constant-current source, Bias-T, low noise amplifier, photon counter, high-speed wideband oscilloscope.Constant-current source provides a stable bias current for device, and be made up of the resistant series of constant pressure source and 100k Ω, entered by the DC termination of Bias-T, the RF termination radio frequency low-noise amplifier of Bias-T amplifies output signal.Photon counter is for recording the response impulse number in a period of time, and oscilloscope is for observing the amplitude of pulse.Photon counter is connected with computer (PC), by conputer controlled constant pressure source for series connection nano wire photon resolved detector provides suitable bias current.
Claims (10)
1. a superconducting nano-wire single-photon detector, it is characterized in that, be made up of the superconducting nano-wire unit of N number of series connection, the parallel resistance of N number of different resistance and optical resonator, the resistance of described N number of different resistance is connected in parallel on the two ends of N number of superconducting nano-wire unit respectively, and described optical resonator covers the superconducting nano-wire unit upper strata of N number of series connection.
2. superconducting nano-wire single-photon detector according to claim 1, is characterized in that, described N be more than or equal to 2 any integer value.
3. superconducting nano-wire single-photon detector according to claim 1, it is characterized in that, the parallel resistance of described N number of different resistance is formed by titanium film preparation, the thickness of described titanium film is identical, the parallel resistance of different resistance is obtained by the length-width ratio changing electric resistance structure, resistance meets following proportionate relationship: when N gets 2, and resistance is 1/2:1; When N gets 3, resistance is 1/4:1/2:1; When N gets 4, resistance is 1/4:1/2:1:2; When N gets any integer value being more than or equal to 5, resistance is 1/4:3/8:1/2:1:2:4: ...: 2
n-4proportionate relationship.
4. superconducting nano-wire single-photon detector according to claim 1, it is characterized in that, described optical resonator is superposed by the silicon oxide dielectric layer of lower floor and the golden reflector on upper strata and forms, the thickness of described silicon oxide dielectric layer is λ/(4 η) with the pass of detection wavelength X, and η is the refractive index of silica.
5. superconducting nano-wire single-photon detector according to claim 4, is characterized in that, the thickness of described silicon oxide dielectric layer is 240nm, and the thickness in described golden reflector is 100nm.
6. prepare a method for superconducting nano-wire single-photon detector as claimed in claim 1, comprise the following steps:
The first step, magnetron sputtering prepares niobium nitride film: have growth thickness on the silicon chip of 250nm thickness silicon dioxide to be the niobium nitride film of 6-8nm in two-sided growth;
Second step, electron beam exposure makes nano wire figure: the nano wire figure that design is wriggled, and nanowire width is 80nm, and duty ratio is 1/3, and the entirety that nano wire covers is in square; Spin coating electron sensitive resist, writes out nano wire figure by electron beam exposure, then obtains nano wire by reactive ion etching, and etch period is 30s;
3rd step, electrode is done in photoetching: by double-layer glue photoetching making gold electrode mask, and first grow titanium film, regrowth gold thin film, finally separates electrode;
4th step, etches unnecessary niobium nitride: etch mask is done in the photoetching of individual layer glue, and reactive ion etching removes unnecessary niobium nitride film, and etch period is 45s, finally removes photoresist;
5th step, titanium resistance is done in photoetching: resistance mask is done in double-layer glue photoetching, prepares by the growth time controlling titanium the titanium film that sheet resistance is 100 Ω, finally peels off the titanium resistance obtaining different resistance;
6th step, optical resonator is done in photoetching: the mask of optical resonator is done in double-layer glue photoetching, uses chemical vapour deposition (CVD) to prepare silicon oxide dielectric layer, then grow golden reflector on described silicon oxide dielectric layer, finally separate optical resonator.
7. prepare the method for superconducting nano-wire single-photon detector according to claim 6, it is characterized in that, the thickness of described titanium film is 10nm, and the thickness of described gold thin film is 100nm.
8. prepare the method for superconducting nano-wire single-photon detector according to claim 6, it is characterized in that, the resistance of the titanium resistance of described different resistance meets following proportionate relationship: when N gets 2, and resistance is 1/2:1; When N gets 3, resistance is 1/4:1/2:1; When N gets 4, resistance is 1/4:1/2:1:2; When N gets any integer value being more than or equal to 5, resistance is 1/4:3/8:1/2:1:2:4: ...: 2
n-4proportionate relationship.
9. prepare the method for superconducting nano-wire single-photon detector according to claim 6, it is characterized in that, the thickness of described silicon oxide dielectric layer is 240nm, and the thickness in described golden reflector is 100nm.
10. prepare the method for superconducting nano-wire single-photon detector according to claim 6, it is characterized in that, in described 6th step, use chemical vapour deposition (CVD) to prepare silicon oxide dielectric layer under 50 DEG C of low temperature environments.
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