CN111081860A - Wide-spectrum high-efficiency superconducting nanowire single photon detector - Google Patents
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Abstract
The invention discloses a wide-spectrum high-efficiency superconducting nanowire single photon detector, which utilizes a combined photosensitive area technology of multiple resonant wavelengths to realize wide-spectrum high-efficiency detection on a single superconducting nanowire single photon detector, and comprises the following components: constructing a nanowire structure with a plurality of photosensitive areas, and adopting a pairwise cascaded structure for the photosensitive areas; different cavity structures are respectively added to each photosensitive area, and different cavity structures and corresponding processing technologies are designed to achieve high detection efficiency of the device in the wavelength range from visible light to near infrared light.
Description
Technical Field
The invention relates to the field of single photon detectors, in particular to a wide-spectrum high-efficiency superconducting nanowire single photon detector.
Background
The ultralow band gap energy of the superconducting material enables Superconducting Nanowire Single Photon Detectors (SNSPDs) to have high-efficiency detection capability in a wide spectrum band from a visible light band to near infrared light. However, SNSPDs fabricated directly on a substrate have low absorption of incident photons, and thus require an additional optical cavity structure to enhance the absorption of photons by the nanowire. SNSPDs with optical cavity structures can achieve nearly 100% detection efficiency at the cavity resonance wavelength, but the wide-spectrum response characteristics of SNSPDs themselves are limited by the narrow-band resonance characteristics of the cavity.
In practical application, the detector needs to realize efficient detection under different wavelengths, such as satellite laser ranging at 1064 nm and singlet molecular oxygen fluorescence detection at 1270 nm. In order to realize efficient detection at different wavelength bands, the conventional single-cavity process needs to manufacture multiple chips with different cavity structures to realize efficient absorption at different wavelengths, which additionally increases the complexity of applying SNSPDs to multiple detection wavelengths.
Disclosure of Invention
The invention provides a wide-spectrum high-efficiency superconducting nanowire single-photon detector, which utilizes a combined photosensitive area technology of multiple resonant wavelengths to realize wide-spectrum high-efficiency detection on a single superconducting nanowire single-photon detector, and is described in detail as follows:
a wide-spectrum high-efficiency superconducting nanowire single photon detector utilizes a combined photosensitive area technology of multiple resonant wavelengths to realize wide-spectrum high-efficiency detection on a single superconducting nanowire single photon detector, and the detector comprises:
constructing a nanowire structure with a plurality of photosensitive areas, and adopting a pairwise cascaded structure for the photosensitive areas;
different cavity structures are respectively added to each photosensitive area, and different cavity structures and corresponding processing technologies are designed to realize efficient absorption of the device in any wave band from visible light to near infrared light.
The two-two cascade structure specifically comprises:
the upper and lower photosensitive regions are cascaded through a nanowire with preset nanometer width, and the left and right cascaded photosensitive regions are cascaded through another nanowire with preset width.
Further, the nanowire is a zigzag nanowire or a fractal nanowire.
Wherein, the cavity structure specifically is:
the cavity structure comprises a gold layer, a first silicon dioxide layer, a superconducting nanowire, a second silicon dioxide layer and a silicon substrate from top to bottom;
in the case of light incident from a silicon substrate, absorption enhancement at different wavelengths is achieved by adjusting the first silicon dioxide layer thickness.
Further, the corresponding processing technology specifically comprises the following steps:
preparing a preset number of silicon dioxide resonant cavities on the surfaces of a preset number of nanowire photosensitive regions in a grading manner by using ultraviolet lithography and electron beam evaporation processes;
and simultaneously preparing a gold reflector with a preset nanometer thickness on the surface of the silicon dioxide resonant cavity by using an ultraviolet lithography and electron beam evaporation or magnetron sputtering process.
Wherein the probe further comprises: the wide spectrum test specifically comprises the following steps:
the position of an incident light spot is regulated and controlled through the nanometer displacement platform, the light spot is aligned with a photosensitive area with a corresponding optical cavity structure in different application wave bands, and high detection efficiency of any wave band in the wavelength range from visible light to near infrared light is achieved.
The technical scheme provided by the invention has the beneficial effects that:
1. the invention utilizes 4 photosensitive areas, prepares 4 resonant cavities with different thicknesses on the photosensitive areas, and can integrate high-efficiency detection of different wave bands on one device corresponding to 4 different resonant wavelengths, so that the polarization-sensitive zigzag-structure superconducting nanowire single photon detector can reach more than 95% of absorption efficiency (when the oscillation direction of an incident light electric field is parallel to the length direction of the photosensitive area nanowire) in the wave band from 1200 nm to 1800 nm, and the polarization-insensitive fractal structure can reach more than 80% of absorption efficiency in the wave band from 1200 nm to 1800 nm;
2. the combined photosensitive area technology with multiple resonant wavelengths used by the invention does not depend on substrate materials, namely common substrates such as a silicon substrate, a sapphire substrate, a magnesium oxide substrate and the like, and the application of the technology is not influenced;
3. the combined photosensitive area technology with multiple resonant wavelengths used by the invention does not depend on superconducting materials, namely, common superconducting materials such as niobium nitride, titanium niobium nitride, tungsten silicide and the like do not influence the application of the technology;
4. compared with a readout circuit for detecting multiple bands by using multiple devices, the readout circuit used by the invention is the same as that of a single SNSPD, so that the complexity of the readout circuit is reduced;
5. the invention has expandability and flexibility: the expansibility means that the number of photosensitive areas and the number of corresponding resonant cavities are not limited to 4, and more photosensitive areas and resonant cavities can be designed to realize high-efficiency detection in a wider wavelength range; flexibility is that the wavelength range can be adjusted as desired and is not limited to a particular wavelength range.
Drawings
FIG. 1 is a Scanning Electron Microscope (SEM) photograph of a device having four square-shaped nanowire photosensitive regions and a simplified device structure;
wherein, a) is an SEM photograph of the device; b) is an enlarged photosensitive area SEM picture; c) the device structure is simplified.
FIG. 2 is an SEM photograph of a device with four fractal nanowire photosensitive regions and a simplified device structure schematic diagram;
wherein, a) is an SEM photograph of the device; b) is an enlarged photosensitive area SEM picture; c) the device structure is simplified.
FIG. 3 is a graph of the optical structure design of the meander SNSPD and the optical absorption simulation result of the meander SNSPD;
wherein, a) is a schematic diagram of four different silicon dioxide cavity structures of the square nanowire, and the lengths of the silicon dioxide cavities of 1250 nm, 1400 nm, 1550 nm and 1700 nm are respectively 150 nm, 200 nm, 250 nm and 290 nm; b) the simulated absorption spectrum of the square-shaped SNSPD with the four cavity structures at a wave band of 1200 nm to 1800 nm is shown by a dotted line, and the absorption maximum values of the four spectral lines are all larger than 95%.
FIG. 4 is a diagram of an optical structure design of a fractal SNSPD and an optical absorption simulation result of the fractal SNSPD;
wherein, a) is a schematic diagram of four different silicon dioxide cavity structures of fractal nano wires, and the lengths of the silicon dioxide cavities of 1250 nm, 1400 nm, 1550 nm and 1700 nm are respectively 130 nm, 180 nm, 220 nm and 270 nm; b) for the simulated absorption spectrum of the fractal SNSPD with the four cavity structures in the wave band of 1200 nm to 1800 nm, the dotted lines show that the absorption maximum values of the four spectral lines are all more than 80%.
FIG. 5 is a schematic diagram of a test system.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are described in further detail below.
The general technical scheme of the wide-spectrum high-efficiency superconducting nanowire single photon detector is divided into the following aspects: the first technique is to design and process a nanowire structure with 4 photosensitive regions (in concrete implementation, the number of photosensitive regions can be more, and only 4 photosensitive regions are taken as an example for description), and the photosensitive regions adopt a structure of cascade connection in pairs, so that the response recovery time of the device is reduced while the photosensitive regions are increased; the second technique is to add 4 different cavity structures to the 4 photosensitive regions (in concrete implementation, the number of resonant cavities may be more, and here, only 4 resonant cavities are taken as an example for description), and design the different cavity structures and corresponding processing techniques to realize efficient absorption of the device in the wavelength range of 1200 nm to 1800 nm (in concrete implementation, the wavelength range may be adjusted according to the needs on the thickness of the resonant cavity and the number of the resonant cavities, and here, only the 1200 nm to 1800 nm band is taken as an example for description); wherein, the first and second technologies are called the combined photosensitive area technology of multiple resonance wavelengths; and the third technology is a method for building a wide spectrum test system and testing a wide spectrum.
Example 1: nanowire structural design and processing
Because 4 photosensitive regions are required to be utilized in the invention, if a direct series connection structure is adopted, the kinetic energy inductance of the whole device is increased. Therefore, the invention adopts the mode of cascade connection of the photosensitive area and the photosensitive area, reduces the whole kinetic energy inductance of the device and improves the response speed of the device.
Scanning electron microscopes with four rectangular nanowire photosensitive regions with a line width of 40 nanometers are shown in fig. 1a) and 1b (in specific implementation, the line width of the nanowire in the photosensitive region can also adopt other values, and the size of the rectangular nanowire is only described as an example here, the 4 rectangular nanowire photosensitive regions with the line width of 8.68 micrometers by 8.56 micrometers are framed by dotted lines (in specific implementation, other sizes of the photosensitive regions with the line width of more than 8.68 micrometers by 8.56 micrometers can also be adopted so as to realize efficient coupling of light spots and the photosensitive regions, and the size of the photosensitive region is only described as an example here), and from the lower right corner, the four rectangular nanowire photosensitive regions are respectively a photosensitive region 1, a photosensitive region 2, a photosensitive region 3 and a photosensitive region 4 clockwise. The photosensitive region 2 and the photosensitive region 3 are cascaded to form a left half photosensitive region, the photosensitive region 1 and the photosensitive region 4 are cascaded to form a right half photosensitive region, the left half photosensitive region and the right half photosensitive region are connected in series again to finally form an integral device with 4 photosensitive regions, the distance between the upper and lower two adjacent photosensitive regions is 30 micrometers (in concrete implementation, other distances can be adopted, only the distance of 30 micrometers is taken as an example for explanation), and the distance between the left and right two adjacent photosensitive regions is 20 micrometers (in concrete implementation, other distances can be adopted, only the distance of 20 micrometers is taken as an example for explanation).
In order to reduce the overall kinetic energy inductance of the device and make the connection structure between the photosensitive regions insensitive to incident photons, the upper and lower photosensitive regions are first cascaded by nanowires 250 nm wide (in concrete implementation, nanowires with other line widths can also be used for cascading, and only the distance of 250 nm is taken as an example here), and the left and right cascaded photosensitive regions are cascaded by nanowires 2 microns, so as to finally form an overall structure layout (in concrete implementation, nanowires with other line widths can also be used for cascading, and only the width of 2 microns is taken as an example here for explaining here), and the simplified device structure schematic diagram is shown in fig. 1 c). Using the same design method, a fractal nanowire structural plate diagram can be obtained, as shown in fig. 2.
According to the designed nanowire layout, the titanium niobium nitride film on the silicon oxide wafer is processed by using a scanning electron beam exposure technology and a reactive ion etching technology (in concrete implementation, other superconducting materials can be adopted, and the titanium niobium nitride film is only taken as an example for explanation), so that the nanowire structure shown in fig. 1 and fig. 2 can be obtained.
Example 2: wide-spectrum optical cavity design and processing
The invention utilizes the optical structure as shown in fig. 3 and 4, and the cavity respectively comprises a gold layer, a silicon dioxide layer, a superconducting nanowire, a 280 nanometer silicon dioxide layer and a 300 micron silicon substrate from top to bottom. In the case of light incident from the underlying silicon substrate, absorption enhancement at different wavelengths is achieved by adjusting the thickness of the silicon dioxide layer under the gold layer. Through the optical absorption simulation of the shape and the fractal, the invention designs 4 cavity structures with the absorption peaks uniformly distributed in the wavelength range of 1200 nm to 1800 nm. The four cavity structures of the zigzag nanowire are shown in fig. 3a), and for the cavity lengths with the wavelengths of 1250 nm, 1400 nm, 1550 nm and 1700 nm of 150 nm, 200 nm, 250 nm and 290 nm, respectively, the absorption simulation result of the four cavity structures in the optimal polarization state in the wavelength range of 1200 nm to 1800 nm is shown in fig. 3b), which shows that the maximum value of the absorption efficiency of the structure in the waveband of 1200 nm to 1800 nm can be more than 95%. The cavity structures of the fractal nano-wire are shown in fig. 4a), and for the cavity lengths with the wavelengths of 1250 nm, 1400 nm, 1550 nm and 1700 nm of 130 nm, 180 nm, 220 nm and 270 nm, respectively, the absorption simulation result of the four cavity structures in the wavelength range of 1200 nm to 1800 nm is shown in fig. 4b), which shows that the maximum value of the absorption efficiency of the structure in the wave band of 1200 nm to 1800 nm can be more than 80%, and the polarization sensitivity of absorption is eliminated.
For the processing flow with four cavity structures, four silicon dioxide resonant cavities are prepared on the surfaces of four nanowire photosensitive regions by using ultraviolet lithography and electron beam evaporation processes for four times, and the optimal cavity lengths are respectively corresponding to wavelengths of 1250 nanometers, 1400 nanometers, 1550 nanometers and 1700 nanometers; then, the invention uses ultraviolet lithography and electron beam evaporation (or magnetron sputtering) technology to prepare a gold reflector with the thickness of 100 nanometers on the surfaces of four silicon dioxide cavities at the same time, and the cavity structure of the chip is manufactured.
Example 3: method for building wide-spectrum test system and testing wide spectrum
The specific test system configuration is shown in FIG. 5, where the combination of a supercontinuum pulsed laser and a monochromator can produce monochromatic light in the 1200 nm to 1800 nm band. After light emitted by the monochromator is coupled into the single-mode optical fiber, the monochromatic light is then introduced into the optical fiber focalizer through the optical attenuator, the polarization controller and the vacuum optical fiber flange of the refrigerator, and finally the light emitted by the optical fiber focalizer enters a photosensitive area with the size of about 8 microns by 8 microns. Because the diameter of the light spot focused by the optical fiber focuser is 4 micrometers, the complete coupling of the light spot and the photosensitive area can be realized. The optical attenuator can attenuate the passed light to a single photon magnitude, and the attenuation value of the optical attenuator is sensitive to the wavelength of the light, so the attenuation value of the optical attenuator needs to be calibrated under different wavelengths; the polarization controller is used for controlling the polarization state of the photons; the optical fiber focalizer is fixed on the nanometer displacement table, and the position of the focalizer is controlled by the nanometer displacement table. And then, the detection pulse of the superconducting nanowire single-photon detector passes through the T-shaped biaser and the amplifier, and then is introduced into the counter to realize single-photon counting, so that the construction of a wide-spectrum detection system is realized.
The method for testing the broad spectrum comprises the steps of regulating and controlling the position of an incident light spot through a nanometer displacement platform, aligning the light spot with a photosensitive area with a corresponding optical cavity structure at different application wave bands, and accordingly achieving high detection efficiency of the detector at the wave band of 1200-1800 nanometers.
In the embodiment of the present invention, except for the specific description of the model of each device, the model of other devices is not limited, as long as the device can perform the above functions.
Those skilled in the art will appreciate that the drawings are only schematic illustrations of preferred embodiments, and the above-described embodiments of the present invention are merely provided for description and do not represent the merits of the embodiments.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (6)
1. A wide-spectrum high-efficiency superconducting nanowire single photon detector is characterized in that a combined photosensitive area technology with multiple resonant wavelengths is utilized to realize wide-spectrum high-efficiency detection on a single superconducting nanowire single photon detector, and the detector comprises:
constructing a nanowire structure with a plurality of photosensitive areas, and adopting a pairwise cascaded structure for the photosensitive areas;
different cavity structures are respectively added to each photosensitive area, and different cavity structures and corresponding processing technologies are designed to realize efficient absorption of the device in any wave band from visible light to near infrared light.
2. The single photon detector with the wide spectrum and the high efficiency for the superconducting nanowires as claimed in claim 1, wherein the structure of the cascade connection of two pairs is specifically as follows:
the upper and lower photosensitive regions are cascaded through a nanowire with preset nanometer width, and the left and right cascaded photosensitive regions are cascaded through another nanowire with preset width.
3. The single photon detector with broad spectrum and high efficiency of the superconducting nanowire as claimed in claim 1 or 2, wherein the nanowire is a meander nanowire or fractal nanowire.
4. The single photon detector with the wide spectrum and the high efficiency for the superconducting nanowire as claimed in claim 1, wherein the cavity structure is specifically as follows:
the cavity structure comprises a gold layer, a first silicon dioxide layer, a superconducting nanowire, a second silicon dioxide layer and a silicon substrate from top to bottom;
in the case of light incident from a silicon substrate, absorption enhancement at different wavelengths is achieved by adjusting the first silicon dioxide layer thickness.
5. The single photon detector of the superconducting nanowire with wide spectrum and high efficiency of claim 1, wherein the corresponding processing technology is specifically as follows:
preparing a preset number of silicon dioxide resonant cavities on the surfaces of a preset number of nanowire photosensitive regions in a grading manner by using ultraviolet lithography and electron beam evaporation processes;
and simultaneously preparing a gold reflector with a preset nanometer thickness on the surface of the silicon dioxide resonant cavity by using an ultraviolet lithography and electron beam evaporation or magnetron sputtering process.
6. The broad spectrum high efficiency superconducting nanowire single photon detector of claim 1, further comprising: the wide spectrum test specifically comprises the following steps:
the position of an incident light spot is regulated and controlled through the nanometer displacement platform, the light spot is aligned with a photosensitive area with a corresponding optical cavity structure in different application wave bands, and high detection efficiency of any wave band in the wavelength range from visible light to near infrared light is achieved.
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