CN110806263B - Multi-photon composite counter - Google Patents
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- 239000002131 composite material Substances 0.000 title claims abstract description 39
- 239000002070 nanowire Substances 0.000 claims abstract description 142
- 230000001960 triggered effect Effects 0.000 claims abstract description 25
- 238000009826 distribution Methods 0.000 claims abstract description 5
- 238000005215 recombination Methods 0.000 claims description 13
- 230000006798 recombination Effects 0.000 claims description 13
- 238000004088 simulation Methods 0.000 claims description 9
- 235000013599 spices Nutrition 0.000 claims description 3
- 230000007704 transition Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000013461 design Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- RJSRQTFBFAJJIL-UHFFFAOYSA-N niobium titanium Chemical compound [Ti].[Nb] RJSRQTFBFAJJIL-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000001000 micrograph Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
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- G01J1/00—Photometry, e.g. photographic exposure meter
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Abstract
The invention discloses a multi-photon composite counter, comprising: the cascade structure is composed of a plurality of narrow photosensitive superconducting nanowires with the same geometric dimension and a wide superconducting nanowire as a current bank, wherein the photosensitive superconducting nanowires are used for respectively detecting a plurality of photons, and the current bank is used for storing superconducting current transferred after the photosensitive superconducting nanowires are triggered; a superconducting nanowire current-limiting inductor is connected in series outside the cascade structure; adjusting the inductance ratio of the photosensitive superconducting nanowire unit and the current bank superconducting nanowire by changing the length and the width of the photosensitive superconducting nanowire and the current bank superconducting nanowire, thereby configuring initial bias current distribution of the photosensitive superconducting nanowire and the current bank; the current-limiting inductors connected in series are used for reducing leakage current flowing into the load impedance after the photosensitive superconducting nanowires are triggered. The invention obviously reduces the complexity of the bias and reading circuit of the multi-photon composite counter and realizes the multi-photon composite counting of more than 4 orders.
Description
Technical Field
The invention relates to the field of optoelectronic devices, in particular to a multi-photon composite counter.
Background
Multiphoton recombination counters (coherent photon counters) are commonly used in the field of quantum optics, for example, to measure the high-order time-dependent function of a light source and to characterize multiphoton entangled states. Currently, an N-order photon composite counter generally needs N independent single photon detectors and corresponding biasing and reading circuits to implement.
Superconducting Nanowire Single Photon Detectors (SNSPDs) are emerging single photon detectors in the 21 st century, which work in low-temperature environments (2K), and have been applied to the aspect of photon composite counting due to the advantages of high response speed, high detection efficiency, low dark counting rate, small time domain jitter and wide spectral response range.
At present, the highest order of photon composite counting is 4 orders based on a multi-photon composite counter of SNSPD. The development of higher-order multi-photon composite counters based on SNSPD is hindered by the problems of high system complexity, complicated subsequent signal processing and the like.
Disclosure of Invention
The invention provides a multi-photon composite counter, which obviously reduces the complexity of a bias and a reading circuit of the multi-photon composite counter, realizes multi-photon composite counting exceeding 4 orders and is described in detail in the following:
a multi-photon recombination counter, comprising:
the cascade structure is composed of a plurality of narrow photosensitive superconducting nanowires with the same geometric dimension and a wide superconducting nanowire as a current bank, wherein the photosensitive superconducting nanowires are used for respectively detecting a plurality of photons, and the current bank is used for storing superconducting current transferred after the photosensitive superconducting nanowires are triggered; a superconducting nanowire current-limiting inductor is connected in series outside the cascade structure; adjusting the inductance ratio of the photosensitive superconducting nanowire unit and the current bank superconducting nanowire by changing the length and the width of the photosensitive superconducting nanowire and the current bank superconducting nanowire, thereby configuring initial bias current distribution of the photosensitive superconducting nanowire and the current bank; the current-limiting inductors connected in series are used for reducing leakage current flowing into the load impedance after the photosensitive superconducting nanowires are triggered.
The multiphoton recombination counter further includes: and simulating by using a thermoelectric simulation model to obtain a working current interval of the multi-photon composite counter.
The multiphoton recombination counter further includes: several orders of photon counts were simulated by an equivalent SPICE model.
The circuit part of the multi-photon composite counter is single-end bias and single-end reading.
Furthermore, the composite counting of any number of photons is realized by adjusting the number and the size of the photosensitive superconducting nanowires and the geometric dimensions of the current bank and the current-limiting inductor.
The technical scheme provided by the invention has the beneficial effects that:
1. the invention designs the structure of realizing 2-order and 8-order photon composite counters on a single superconducting nanowire device by utilizing the cascade superconducting nanowire and current library structures, and manufactures actual devices by a nano processing technology;
2. compared with the prior scheme of measuring the composite counting by utilizing a plurality of single photon detectors, the invention increases the photon order of the composite counting from 4 to 8 or more;
3. compared with the common-counting scheme in the prior art, the common-counting scheme is not required to be carried out by an external multi-channel composite counter channel, so that a biasing circuit and a reading circuit are greatly simplified; and the scheme has greater flexibility in structural design parameters.
Drawings
FIG. 1 is a schematic diagram of the operation of a 2-order photon recombination counter;
wherein, the diagram (a) is a schematic structural diagram of a 2-order photon composite counter: consists of 2 narrow-line-width photosensitive superconducting nanowires and 1 wide-line-width current bank structure, and two photons are at t1Time and t2Triggering two photosensitive superconducting nanowires at any moment respectively to generate a measurable output voltage pulse signal; the working principle of the 2-order photon composite counter is shown in the diagrams (b) - (e) (wherein L0Is a photosensitive nanowire kinetic energy inductor, LrIs a current reservoir kinetic energy inductor, LsIs a series current-limiting inductor, Z0Is a load impedance, IbIs a constant current source) showing one duty cycle for a two-photon count.
FIG. 2 is a schematic diagram of the operation of an 8-th order photon recombination counter;
wherein, the diagram (a) is an equivalent circuit schematic diagram of an 8-order photon composite counter, L0Is a photosensitive superconducting nanowire kinetic energy inductor, LrIs a current reservoir kinetic energy inductor, LsIs a series current-limiting inductor, Z0Is a load impedance, IbIs a constant current source; and (b) shows the time-varying graphs of the current of the 8 photosensitive superconducting nanowires, the current of the current bank and the output voltage when the 8 photosensitive superconducting nanowires are sequentially triggered.
FIG. 3 is a scanning electron microscope image of the 2 nd and 8 th photon recombination counters.
Wherein, the picture (a) is a scanning electron microscope picture of a 2-order photon composite counter, the left nanowire is a current bank structure with the line width of 100nm, and the two parallel nanowires on the right side are photosensitive nanowire areas with the line width of 50 nm; the figure (b) is a scanning electron microscope image of an 8-order photon composite counter, the left nanowire is a current bank structure with the line width of 400nm, and the right 8 parallel nanowires are photosensitive nanowire areas with the line width of 50 nm.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are described in further detail below.
Example 1
The general technical scheme of the invention can be generally used for an N-order photon composite counter, and the following parts are firstly explained by taking a 2-order photon composite counter and taking an example as a specific scheme:
for the 2 nd order photon recombination count, the device structure is designed as shown in fig. 1 (a): the superconducting nanowire current limiting device is a cascade structure consisting of 2 photosensitive superconducting nanowires with the same geometric dimension (used for respectively detecting 2 photons) and 1 wider superconducting nanowire serving as a current bank (used for storing superconducting current transferred after triggering of the photosensitive nanowires), and a superconducting nanowire current limiting inductor is connected outside the cascade structure in series. The structure adjusts the inductance ratio of the two photosensitive superconducting nanowires and the current bank superconducting nanowire by changing the length and the width of the photosensitive superconducting nanowire and the current bank superconducting nanowire, so as to configure the initial bias current distribution of the photosensitive superconducting nanowire and the current bank, and the current-limiting inductors connected in series are used for reducing the load impedance Z flowing into the photosensitive superconducting nanowire after being triggered0The leakage current of (c).
Using thermoelectric simulation models[1]The structure is simulated to obtain the device working period shown as (b) - (e) in fig. 1: (b) bias currents of the 2 photosensitive superconducting nanowires and the current bank superconducting nanowires in an initial state are slightly lower than the critical current of the photosensitive superconducting nanowires and the current bank superconducting nanowires; (c) when a first photon is incident on one of the photosensitive superconducting nanowires, the nanowire is triggered to become a resistive state, most of the bias current on the nanowire is redistributed to the other photosensitive superconducting nanowire and the current bank nanowire, and a small part of the current is transferred to the load impedance, so that the bias current of the other photosensitive superconducting nanowire and the current bank is improved, but the bias current of the other photosensitive superconducting nanowire and the current bank is not beyond the respective superconducting transition current IswAt this time, the other photosensitive superconducting nanowire and the current bank nanowire are not triggered; (d) restoring superconducting state for previously triggered photosensitive superconducting nanowires, but with very low bias currentCannot be triggered again by photons; (e) when a second photon is incident on another photosensitive superconducting nanowire, the superconducting nanowire is triggered to become a resistive state, the current on the superconducting nanowire is transferred to the current bank superconducting nanowire and the previously triggered superconducting nanowire, so that the bias current on the current bank exceeds the superconducting transition current of the current bank, and the current bank is triggered to become the resistive state. The current in the current bank is redistributed to the two photosensitive superconducting nanowires and triggers the two photosensitive superconducting nanowires, so that all the superconducting nanowires are in a triggering state at the moment, most of bias current is injected into load impedance, a detectable output voltage pulse signal is generated, and the common counting of two photons is realized; and the three superconducting nanowires will return to the initial bias state after returning from the triggered resistive state to the superconducting state, as shown in fig. 1 (b).
To further illustrate the extended function of the present solution with multi-order photon composite counting, an 8-order photon co-counting implementation is further illustrated herein. Because the thermoelectric simulation of the multi-order photons is more complicated, an equivalent SPICE model is adopted[2]The 8 th order photon count was simulated. The electrical model of the device is shown in fig. 2 (a): the current limiting device is a cascade structure consisting of 8 photosensitive superconducting nanowires with the same narrow line width (used for photon detection) and 1 current bank with the same wide line width (used for current storage), wherein the cascade structure is connected with a current limiting inductor in series. The simulation result is shown in fig. 2 (b): similar to the 2 nd order photon counting, the device only injects enough current into the current bank superconducting nanowires when 8 photosensitive superconducting nanowires are triggered respectively, so that the current bank superconducting nanowires are triggered, then all the superconducting nanowires are triggered, and finally a detectable voltage pulse signal is output.
In addition, the nanowire material in the present invention may use a polycrystalline material, including: niobium nitride, titanium niobium nitride, and the like, as well as amorphous materials including tungsten silicide, molybdenum silicide, and the like. The typical thickness of the nanowire is 4-9 nm. In addition, the nanowire structure may also adopt a spiral or fractal structure other than the zigzag structure shown in fig. 2 (a), and may be optically coupled through a free space, an optical fiber or a waveguide, so that the present solution has a high flexibility in the design of the nanowire structure and the optical coupling.
In specific implementation, the embodiment of the invention does not limit the width range of the photosensitive superconducting nanowire, and only ensures that the photosensitive superconducting nanowire can be triggered by photons, and the width is usually less than 150 nanometers; the width of the current bank superconducting nanowire is wider than that of the photosensitive superconducting nanowire, and then N-order photon composite counting needs to be guaranteed, the width is usually determined by actual simulation and is generally set to be N times of the width of the photosensitive superconducting nanowire; when the width of the current-limiting inductive nanowires is selected, it is ensured that the current-limiting inductive nanowires are not triggered, and the width is usually not less than the sum of the widths of all the photosensitive superconducting nanowires and the widths of the current-reservoir nanowires.
Example 2
The first implementation mode comprises the following steps:
2-order photon composite counter design:
referring to fig. 1, in the graph (a), the line width of two identical photosensitive superconducting nanowires is 50nm, the line width of the current reservoir superconducting nanowire is 100nm, and the line width of the series current limiting nanowire is 300 nm. By adjusting the length of the superconducting nanowires, the ratio of kinetic energy to inductance of the photosensitive superconducting nanowires to the superconducting nanowires of the current bank is designed to be 2:1, so that the initial current distribution between the two photosensitive superconducting nanowires and the current bank is 1:1: 2. The inductance of the current-limiting superconducting nanowire is 5 times of that of a single photosensitive superconducting nanowire, and the effect of limiting the current of the photosensitive superconducting nanowire to enter load impedance is achieved. Simulation results show that under the geometrical structure, the working current range of the two-photon composite counter is 62% -79% of superconducting transition current.
And inputting a bias current to enable the bias current in the photosensitive superconducting nanowires to be 75% of superconducting transition current, wherein simulation results show that after a first photon triggers one superconducting nanowire, 24% and 48% of currents respectively flow into the other photosensitive superconducting nanowire and the current bank superconducting nanowire. At this time, the other photosensitive superconducting nanowire is biased at 93% of the superconducting transition current and is not triggered. Thus, only when the 2 nd photon triggers another photosensitive nanowire, 79% of the bias current in the photosensitive superconducting nanowire will sink into the current reservoir superconducting nanowire, thereby triggering the current reservoir. The current flowing out after the current base is triggered can trigger the photosensitive superconducting nanowire, and finally the three superconducting nanowires are in a triggered resistive state. So that current flows into the load impedance and a measurable voltage pulse signal is generated.
The second embodiment:
designing an 8-order photon composite counter:
the line widths of the eight same photosensitive superconducting nanowires are 50nm, the line width of the current bank superconducting nanowire is 400nm, and the line width of the series current-limiting superconducting nanowire is 1200 nm. By adjusting the length of the superconducting nanowire, the ratio of kinetic energy to inductance of the photosensitive superconducting nanowire to the current bank superconducting nanowire is designed to be 8: 1. The inductance of the current-limiting superconducting nanowire is 5 times of that of a single photosensitive superconducting nanowire, and the effect of limiting the current of the photosensitive superconducting nanowire to enter load impedance is achieved. The photosensitive superconducting nanowires were then biased at a superconducting transition current of 70%. The subsequent process is similar to 2-order photon counting, and only when 8 photosensitive superconducting nanowires are triggered by photons, the current in the current bank can exceed the superconducting transition current, so that all the superconducting nanowires are triggered to generate a detectable voltage pulse signal. Simulation results show that under the geometrical structure, the working current interval of the 8-order photon composite counter is 66% -70% of superconducting transition current.
The third embodiment is as follows:
processing the photon composite counter:
sputtering a titanium niobium nitride film with the thickness of about 9nm on a silicon oxide substrate in a magnetron sputtering mode;
transferring the nanowire graph to electron beam exposure glue by a scanning electron beam exposure method, and etching the nanowire graph on the titanium niobium nitride film by a reactive ion beam etching method by using the electron beam exposure glue as a mask;
an electrical connection electrode (titanium/gold) aligned with the nanowire pattern was deposited on the titanium niobium nitride film by photolithography-electron beam evaporation-lift-off.
The scanning electron microscope image of the finally processed 2 nd and 8 th order photon recombination counters is shown in fig. 3.
Reference to the literature
[1]J.K.W.Yang,A.J.Kerman,E.A.Dauler,V.Anant,K.M.Rosfjord,and K.K.Berggren,―Modeling the electrical and thermal response of superconducting nanowire singlephoton detectors,”IEEE Transactions on Appl.Supercond.17,581–585(2007).
[2]K.K.Berggren,Q.-Y.Zhao,N.Abebe,M.Chen,P.Ravindran,A.McCaughan,and J.C.Bardin,Supercond.Sci.Technol.31,055010(2018).
In the embodiment of the present invention, except for the specific description of the model of each device, the model of other devices is not limited, as long as the device can perform the above functions.
Those skilled in the art will appreciate that the drawings are only schematic illustrations of preferred embodiments, and the above-described embodiments of the present invention are merely provided for description and do not represent the merits of the embodiments.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (5)
1. A multi-photon recombination counter, comprising:
the superconducting nanowire array is a parallel structure which is composed of a plurality of narrow photosensitive superconducting nanowires with the same geometric dimension and a wide superconducting nanowire as a current bank, wherein the photosensitive superconducting nanowires are used for respectively detecting a plurality of photons, and the current bank superconducting nanowires are used for storing superconducting current transferred after the photosensitive superconducting nanowires are triggered; a superconducting nanowire current-limiting inductor is connected in series outside the parallel structure;
adjusting the inductance ratio of the photosensitive superconducting nanowire unit and the current bank superconducting nanowire by changing the length and the width of the photosensitive superconducting nanowire and the current bank superconducting nanowire, thereby configuring initial bias current distribution of the photosensitive superconducting nanowire and the current bank superconducting nanowire;
the current-limiting inductors connected in series are used for reducing leakage current flowing into the load impedance after the photosensitive superconducting nanowires are triggered.
2. The multi-photon recombination counter of claim 1, further comprising:
and simulating by using a thermoelectric simulation model to obtain a working current interval of the multi-photon composite counter.
3. The multi-photon recombination counter of claim 1, further comprising:
several orders of photon counts were simulated by an equivalent SPICE model.
4. The multiphoton recombination counter of claim 1,
the circuit part of the multi-photon composite counter is single-ended bias and single-ended reading.
5. The multi-photon composite counter according to claim 1, wherein the composite counting of any number of photons is realized by adjusting the number and size of photosensitive superconducting nanowires, and the geometrical size of current bank superconducting nanowires and current limiting inductors.
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| CN104752534A (en) * | 2015-04-27 | 2015-07-01 | 南京大学 | Superconductive nanowire single-photon detector and manufacturing method thereof |
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