CN108666409A - A kind of structure improving superconducting nano-wire absorption efficiency - Google Patents
A kind of structure improving superconducting nano-wire absorption efficiency Download PDFInfo
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- CN108666409A CN108666409A CN201810440709.1A CN201810440709A CN108666409A CN 108666409 A CN108666409 A CN 108666409A CN 201810440709 A CN201810440709 A CN 201810440709A CN 108666409 A CN108666409 A CN 108666409A
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- wire
- superconducting nano
- absorption efficiency
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- bragg mirror
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/82—Current path
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/83—Element shape
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/85—Superconducting active materials
Abstract
The structure of superconducting nano-wire absorption efficiency is improved the invention discloses a kind of, including substrate, single layer metal firms, Bragg mirror and the superconducting nano-wire being arranged from lower to upper；The Bragg mirror is alternately stacked dielectric film structure of multiple periods, and periodicity is more than or equal to six.The structure of the present invention greatly reduces the periodicity of the alternately stacked dielectric film of Bragg mirror so that single-photon detector is compact-sized and has high absorption efficiency.
Description
Technical field
The present invention relates to superconducting nano-wire single-photon detector fields, more particularly to a kind of raising superconducting nano line absorption
The structure of efficiency.
Background technology
Superconducting nano-wire single-photon detector is a kind of novel single-photon detectors in invention in 2001, in near-infrared
Wave band (780-2526nm), superconducting nano-wire single-photon detector is in quantum efficiency, dark counting, detection rate and time jitter etc.
It is substantially better than other kinds of single-photon detector in terms of performance indicator, superconducting nano-wire single-photon detector is applied at present
In fields such as quantum key distribution, the application of flight time Range finder and Space-to-ground optical communications.
The core component of superconducting nano-wire single-photon detector is the nano wire prepared with film superconductor, and application is wider
Film superconductor have Nb, NbN, NbTiN and WSi etc..Superconducting nano-wire detection single-photon detector operation principle be：When
Superconducting nano-wire be operated in superconduction critical temperature hereinafter, and bias current when being slightly below critical current, single infrared photon enters
It penetrates, destroys the Cooper pair in superconducting nano-wire, so as to form there is resistance hot spot region.Later, hot spot region force electric current around
Area's flowing is hindered, to which the current density around hot spot increases, is more than critical current density, forms the resistance across nanowire width
Anti- region, it is thus evident that due to the suddenly change of impedance, output voltage pulse can be formed at nano wire both ends.
Patent CN 104091883A have applied a kind of based on positive incident, Bragg mirror superconducting nano-wire monochromatic light
Sub- panel detector structure, the structure generally require more than ten of period even to obtain higher reflectivity and lower transmissivity
More alternately stacked dielectric films, this brings prodigious complexity for technique preparation.
Invention content
Goal of the invention：The object of the present invention is to provide a kind of structures improving superconducting nano-wire absorption efficiency, for solving
The influence that the complicated of superconducting nano-wire single-photon detector, absorption efficiency are low in the prior art and substrate is to absorption efficiency
The problems such as.
Technical solution：To reach this purpose, the present invention uses following technical scheme：
It is of the present invention to improve the structure of superconducting nano-wire absorption efficiency, including substrate, the single layer being arranged from lower to upper
Metallic film, Bragg mirror and superconducting nano-wire；The Bragg mirror is that alternately stacked medium of multiple periods is thin
Membrane structure, periodicity are more than or equal to six.
Further, the material of the single layer metal firms is Ta, Al, Cu, Au or Ag.
Further, the Bragg mirror each cycle includes SiO2Film layer and Ta2O5Film layer.
Further, the thickness of each film layer in the Bragg mirror is equal to incident light 1/4 of equivalent layer etc.
Length.
Further, the substrate material is Si, MgO or sapphire.
Advantageous effect：The invention discloses a kind of structures improving superconducting nano-wire absorption efficiency, greatly reduce Bradley
The periodicity of the alternately stacked dielectric film of lattice speculum so that single-photon detector is compact-sized and is imitated with high absorption
Rate.
Description of the drawings
Fig. 1 is a kind of based on positive incident, raising superconducting nano-wire absorption efficiency in the specific embodiment of the invention
The superconducting nano-wire single-photon detector schematic diagram of structure；
Fig. 2 is the superconducting nano-wire structural schematic diagram in the specific embodiment of the invention；
Fig. 3 is the single-photon detecting based on the structure for improving superconducting nano-wire absorption efficiency in the specific embodiment of the invention
Survey the relation schematic diagram of the absorption efficiency and wavelength of device.
Specific implementation mode
Technical scheme of the present invention is further introduced With reference to embodiment.
Present embodiment disclose it is a kind of improve superconducting nano-wire absorption efficiency structure, as shown in Figure 1, include by
Under the substrate 1, single layer metal firms 2, Bragg mirror 3 and the superconducting nano-wire 4 that are up arranged.Bragg mirror 3 is more
A period alternately stacked dielectric film structure, periodicity are more than or equal to six.The material of superconducting nano-wire 4 is NbN, width 75
Nanometer, duty ratio 50%, thickness are 8.5 nanometers, and structure is as shown in Figure 2.
The material of single layer metal firms 2 can be Ta, Al, Cu, Au or Ag.Single layer metal firms in present embodiment
2 material is Ta, and thickness is 100 nanometers.
3 each cycle of Bragg mirror includes SiO2Film layer 6 and Ta2O5Film layer 7, and the bottom is (i.e. and single-layer metal
The layer that film 2 contacts) it is Ta2O5Film layer 7, top layer's (layer contacted with superconducting nano-wire 4) are SiO2Film layer 6.Bradley
The thickness of each film layer in lattice speculum 3 be equal to incident light equivalent layer 1/4 effective wavelength.Bragg mirror 3 one
As be alternately made of two kinds of different refractivity dielectric films, and when the thickness of dielectric film is incident light the 1/ of equivalent layer
When 4 effective wavelength, high reflectivity can be reached.In the practical application of superconducting nano-wire single-photon detector, cavity knot
Structure needs higher reflectivity and lower transmissivity, and the absorption efficiency of superconducting nano-wire could be made to maximize in this way.Only
When using Bragg mirror, to obtain ideal reflectivity and transmissivity, more than ten even more periodicities are generally required.
In this embodiment, when thin 2 film of single-layer metal is combined with six period alternately stacked dielectric films, you can obtain pole
High reflectivity and almost nil transmissivity.
1 material of substrate can be Si, MgO or sapphire.The material of substrate 1 is Si, and thickness in present embodiment
It is 400 microns.
This structure uses front incidence, and incident light is shone directly into 4 region of superconducting nano-wire, the back side is avoided and enters
Diverging of the substrate 1 to incident light in mode is penetrated, the coupling efficiency of superconducting nano-wire 4 is improved, keeps its coupling efficiency close
100%.
As shown in figure 3, giving in present embodiment based on the structure for improving superconducting nano-wire absorption efficiency, nanometer
The absorption efficiency of line and the relation schematic diagram of wavelength.As can be seen that when wavelength is 1550 nanometers, absorption efficiency is close
100% (99.34%).
Claims (5)
1. a kind of structure improving superconducting nano-wire absorption efficiency, it is characterised in that：Including substrate, the single layer being arranged from lower to upper
Metallic film, Bragg mirror and superconducting nano-wire；The Bragg mirror is that alternately stacked medium of multiple periods is thin
Membrane structure, periodicity are more than or equal to six.
2. the structure according to claim 1 for improving superconducting nano-wire absorption efficiency, it is characterised in that：The single-layer metal
The material of film is Ta, Al, Cu, Au or Ag.
3. the structure according to claim 1 for improving superconducting nano-wire absorption efficiency, it is characterised in that：Described Prague is anti-
It includes SiO to penetrate mirror each cycle2Film layer and Ta2O5Film layer.
4. the structure according to claim 3 for improving superconducting nano-wire absorption efficiency, it is characterised in that：Described Prague is anti-
Penetrate each film layer in mirror thickness be equal to incident light equivalent layer 1/4 effective wavelength.
5. the structure according to claim 1 for improving superconducting nano-wire absorption efficiency, it is characterised in that：The substrate material
For Si, MgO or sapphire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810440709.1A CN108666409A (en) | 2018-05-10 | 2018-05-10 | A kind of structure improving superconducting nano-wire absorption efficiency |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810440709.1A CN108666409A (en) | 2018-05-10 | 2018-05-10 | A kind of structure improving superconducting nano-wire absorption efficiency |
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| CN108666409A true CN108666409A (en) | 2018-10-16 |
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| CN201810440709.1A Pending CN108666409A (en) | 2018-05-10 | 2018-05-10 | A kind of structure improving superconducting nano-wire absorption efficiency |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109659386A (en) * | 2018-12-06 | 2019-04-19 | 中国科学院上海微系统与信息技术研究所 | Multispectral superconducting nano-wire single-photon detector |
| CN111312846A (en) * | 2019-10-31 | 2020-06-19 | 山东大学 | Superconducting micron line single photon detector with nanopore array and preparation method thereof |
| WO2021216162A3 (en) * | 2020-02-03 | 2022-01-06 | Applied Materials, Inc. | Snspd with integrated aluminum nitride seed or waveguide layer |
| CN114530509A (en) * | 2022-01-24 | 2022-05-24 | 西安理工大学 | Superconducting nanowire single photon detector with mid-infrared high light absorption characteristic |
| US11653576B2 (en) | 2020-02-03 | 2023-05-16 | Applied Materials, Inc. | SNSPD with integrated aluminum nitride seed or waveguide layer |
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| TW201340405A (en) * | 2012-03-30 | 2013-10-01 | Lextar Electronics Corp | Light emitted diode |
| CN104091883A (en) * | 2014-07-15 | 2014-10-08 | 中国科学院上海微系统与信息技术研究所 | Superconductive nanowire single photon detector based on dielectric film reflector |
| CN106549098A (en) * | 2015-09-17 | 2017-03-29 | 中国科学院上海微系统与信息技术研究所 | Narrow-band absorption superconducting nano-wire single-photon detector |
| WO2018106902A1 (en) * | 2016-12-07 | 2018-06-14 | Arizona Board Of Regents On Behalf Of The University Of Arizona | Patterned metallization for hybrid metal-semiconductor mirror of high reflectivity |
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2018
- 2018-05-10 CN CN201810440709.1A patent/CN108666409A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| TW201340405A (en) * | 2012-03-30 | 2013-10-01 | Lextar Electronics Corp | Light emitted diode |
| CN104091883A (en) * | 2014-07-15 | 2014-10-08 | 中国科学院上海微系统与信息技术研究所 | Superconductive nanowire single photon detector based on dielectric film reflector |
| CN106549098A (en) * | 2015-09-17 | 2017-03-29 | 中国科学院上海微系统与信息技术研究所 | Narrow-band absorption superconducting nano-wire single-photon detector |
| WO2018106902A1 (en) * | 2016-12-07 | 2018-06-14 | Arizona Board Of Regents On Behalf Of The University Of Arizona | Patterned metallization for hybrid metal-semiconductor mirror of high reflectivity |
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| SCHWARZL, T ET AL.: "High-reflectivity lead-salt-based Bragg mirrors for the mid-infrared range", 《IEEE JOURNAL OF QUANTUM ELECTRONICS》 * |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109659386A (en) * | 2018-12-06 | 2019-04-19 | 中国科学院上海微系统与信息技术研究所 | Multispectral superconducting nano-wire single-photon detector |
| CN111312846A (en) * | 2019-10-31 | 2020-06-19 | 山东大学 | Superconducting micron line single photon detector with nanopore array and preparation method thereof |
| CN111312846B (en) * | 2019-10-31 | 2023-05-02 | 山东大学 | Superconducting microwire single-photon detector with nanopore array and preparation method thereof |
| WO2021216162A3 (en) * | 2020-02-03 | 2022-01-06 | Applied Materials, Inc. | Snspd with integrated aluminum nitride seed or waveguide layer |
| US11653576B2 (en) | 2020-02-03 | 2023-05-16 | Applied Materials, Inc. | SNSPD with integrated aluminum nitride seed or waveguide layer |
| US11788883B2 (en) | 2020-02-03 | 2023-10-17 | Applied Materials, Inc. | SNSPD with integrated aluminum nitride seed or waveguide layer |
| JP7440649B2 (en) | 2020-02-03 | 2024-02-28 | アプライド マテリアルズ インコーポレイテッド | SNSPD with integrated aluminum nitride seed or waveguide layer |
| CN114530509A (en) * | 2022-01-24 | 2022-05-24 | 西安理工大学 | Superconducting nanowire single photon detector with mid-infrared high light absorption characteristic |
| CN114530509B (en) * | 2022-01-24 | 2024-01-30 | 西安理工大学 | Superconducting nanowire single photon detector with mid-infrared high light absorption characteristic |
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