CN111947794B - Preparation method of superconducting nanowire single photon detector - Google Patents
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Abstract
The invention relates to the technical field of infrared single photon detection, in particular to a preparation method of a superconducting nanowire single photon detector, which comprises the following steps: preparing a nanowire step structure on a substrate; preparing a superconducting material on the substrate with the nanowire step structure to form a superconducting nanowire structure; preparing metal electrode contact layers at two ends of the superconducting nanowire structure by using a mask plate A; and preparing an insulating protective layer on the superconducting nanowire structure and the metal electrode contact layer by using a mask B. According to the preparation method, the step structure of the nanowire is firstly prepared on the substrate, and then the superconducting material is prepared on the substrate with the step of the nanowire to form the superconducting nanowire structure, so that photoetching and etching processing of the superconducting material is avoided.
Description
Technical Field
The invention relates to the technical field of infrared single photon detection, in particular to a preparation method of a superconducting nanowire single photon detector.
Background
A single-photon detector (single-photon detector) records a basic quantum system of photons by means of very sensitive detection capability, and has very important application value in various fields of modern science and engineering. In the past decades, various single photon detection devices and technologies have great effects in quantum optics and traditional optics, and make positive contributions to basic physics research and visible light and infrared detection. Different single photon detectors have respective advantages and disadvantages, wherein a Superconducting Nanowire Single Photon Detector (SNSPD) is a potential low-noise infrared photon detection device. As a novel single-photon device, the SNSPD can simultaneously have the advantages of high detection efficiency, wide response spectrum, small dark counting rate, low time jitter, high repetition rate and the like, and has important application value in the fields of quantum information, single-photon characterization, integrated circuit detection, high-speed optical communication, molecular fluorescence detection and the like.
The superconductive nanowire single photon detector is a weak photon signal detection device based on the transition of a superconductive film from a superconductive state to a normal state. The most basic unit of the superconducting nanowire single photon detector is a winding nanowire which is prepared by an ultrathin superconducting material film through a processing means. The nanowires are typically less than 10nm thick and around 150nm wide, and in order to couple with a single mode optical fibre, the meandering nanowires often cover an area of not less than 15 μm by 15 μm, and therefore the overall length of the line is often above 1 mm. The detector is refrigerated by a 4.2K liquid helium or lower temperature GM refrigerator to obtain a proper working environment. The superconducting nanowire in a superconducting state cannot detect photons, a constant bias current is artificially loaded to the SNSPD, a uniform current is obtained on the nanowire strip at the moment, the current is smaller than the critical current of the nanowire, therefore, the nanowire is still in the superconducting state, after the photons are incident, the superconducting nanowire material absorbs the energy of the photons to generate a resistance state, the superconducting current cannot enter a resistance state area to be squeezed, the current density around a hot spot is increased, the critical current density is exceeded, the nanowire in the whole range quenches, a resistance barrier is formed, and therefore the state of a circuit is changed to generate voltage response. Joule heat acts on the resistive barrier region, increasing its resistance until the bias current is absorbed by the external circuit load, and the nanowire cools down gradually due to the dissipation of joule heat, and returns to the superconducting state again when the temperature is lower than the transition temperature.
Since the first validation of gold 'Tsman et al in 2001 by the superconducting material niobium nitride (NbN), SNSPD has attracted considerable attention from researchers with its high infrared detection efficiency, fast recovery time, low dark count and low time jitter (g.gold' Tsman, o.okunev, g.chunkova, et al].Applied Physics Letters,2001, 79: 705-707). In recent ten years, under the continuous efforts of various scientific research units in the world, the performances of SNSPD have been developed and advanced in a breakthrough manner. According to the related report at present, the highest system detection efficiency of the SNSPD can reach 93%, the detection speed can reach hundred megahertz, the time jitter is 18ps at least, the dark count is less than 1cps, the maximum photon number resolution capability can reach 24 photons, and at most 64 units can be prepared on one array device. Based on such excellent performance of SNSPD, despite the complex cooling equipment required by the detection system, it is still gradually becoming a powerful competitor to semiconductor photon detectors (Ulipristan. Superconducting nanowire single photon detection status and prospect [ J]Infrared and laser engineering, 2018, 47 (12): 9-14). The coupling efficiency of the device is greatly improved by improving the nanowire structure, in order to further improve the detection efficiency of the system, the structure of the device is improved by a research group of MIT (Massachusetts Institute of Technology) in 2006, the device is prepared into a back-surface incidence mode, a resonant cavity is formed above the device through a metal reflector, the absorption efficiency of the nanowire is improved, a reflection reducing layer is prepared on the back surface of the device to reduce the reflectivity of a substrate to incident light, the detection efficiency of the device is greatly improved by the structure for increasing the absorption efficiency of the nanowire by using the resonant cavity, and a measurement result shows that: polarization characteristic study of superconducting nanowire single photon detector [ D ] with detection efficiency eta =57% @1550nm and eta =67% @1064nm (Xuruiying)]University of Nanjing, 2019). The Shanghai microsystem and information technology research institute Youxing subject group of China academy of sciences reports that a high-speed SNSPD array with 70% System Detection Efficiency (SDE) and 200Hz dark counting rate is realized by utilizing 9 mutually-staggered nanowire arrays under the low photon flux limit of 1550 nm. At a photon flux of 1.26X 10 10 When photons/s are used, the maximum counting rate reaches 0.93GHz, and the SDE is 7.4 percent at the moment; when the counting rate is 200MHz, the SDE exceeds 50% (the high-speed superconducting nanowire single-photon detector based on 9 mutually-staggered nanowire structures achieves important progress [ J)]Technologies and markets, 2018, 25 (09): 4).
In summary, the superconducting nanowire single photon detector has great potential in many fields, in order to process a superconducting thin film into a nanowire device, ultraviolet lithography or electron beam etching is generally required to be performed on the nanowire device, and the manufacturing process of a microstructure device requires that the surface of a material is contacted with various chemical substances, such as photoresist, developing solution, various organic solvents and the like, but the preparation process and the chemical substances easily affect the characteristics of the superconducting thin film, and even cause the superconducting thin film to lose the superconducting characteristics. Therefore, it is important to optimize the processing technology of the nanowire device and reduce or avoid the influence of the processing technology on the performance of the superconducting material and the device.
Disclosure of Invention
Aiming at the problems, the invention aims to provide a preparation method of a superconducting nanowire single photon detector, which avoids directly carrying out photoetching and etching processing on a superconducting film in the preparation process and ensures the stable performance of the superconducting film and a nanowire device.
In order to achieve the aim, the invention provides a preparation method of a superconducting nanowire single photon detector, which comprises the following steps:
(1) Preparing a nanowire step structure 20 on a substrate 10 (as shown in fig. 1 and 6), as shown in fig. 2 and 7, the nanowire step structure adopting photolithography and ion etching techniques;
(2) Preparing a superconducting material on the substrate with the nanowire step structure 20 by adopting methods such as molecular beam epitaxy, magnetron sputtering and the like to form a superconducting nanowire structure 30, as shown in fig. 3 and 8;
(3) Preparing metal electrode contact layers 41 at both ends of the superconducting nanowire structure 31 by using a mask A40 and using an electron beam evaporation or thermal evaporation method, as shown in FIGS. 4 and 9;
(4) An insulating protection layer 51 is prepared on the superconducting nanowire structure 30 and the metal electrode contact layer 41 using electron beam evaporation using a mask B50, as shown in fig. 5 and 10.
Further, the substrate in step (1) comprises any one of strontium titanate, silicon oxide, gallium arsenide, and sapphire.
Further, the nanowire step structure in the step (1) is prepared by adopting photoetching and ion etching processes.
Further, the nanowire step structure is composed of a meandering nanowire at the center and electrode contact surfaces at both ends.
Further, the area of the meandering nanowire region was 50 μm 2 ～500μm 2 The line width of the nano-wire is 50-300 nm, and the distance is 80-300 nm; the two ends of the nanowire are connected with electrode contact surfaces, and the area of each electrode contact surface is 60 multiplied by 60 mu m 2 ～200×200μm 2 (ii) a The height of the nanowire step structure is 50-500 nm, and the included angle between the side wall and the substrate is 70-90 degrees.
Further, the superconducting material in the step (2) comprises any one of niobium nitride, niobium titanium nitride, tungsten silicide, magnesium diboride, iron-based superconducting and copper-based superconducting.
Furthermore, the superconducting material in the step (2) is prepared by adopting a molecular beam epitaxy or magnetron sputtering method, and the thickness of the superconducting material is 5-20 nm.
Furthermore, the superconducting nanowire structure in the step (2) is obtained by covering a superconducting material on the nanowire step structure; the superconducting nanowire structure is consistent with the nanowire step structure in shape.
Further, when the metal electrode contact layer is prepared in the step (3), the mask plate A is contacted with the substrate to shield the meandering nanowire area at the center, the electrode contact surfaces at two ends are exposed, and the prepared metal electrode contact layer completely covers the electrode contact surfaces at two ends; the metal electrode contact layer is prepared by adopting an electron beam evaporation or thermal evaporation method, the material of the metal electrode contact layer is made of any one or at least two of gold, titanium, aluminum, nickel and chromium, and the thickness is 50-400 nm.
Further, when the insulating protective layer is prepared in the step (4), the mask plate B is contacted with the substrate, part of the electrode contact surface area is shielded, the central meandering nanowire and part of the electrode contact surface area are exposed, and the prepared insulating protective layer covers the central meandering nanowire and part of the electrode contact surface; the insulating protective layer material comprises any one of silicon oxide, silicon nitride and aluminum oxide, and is prepared by adopting an electron beam evaporation method, and the thickness of the insulating protective layer is 50-300 nm.
In summary, compared with the prior art, the invention has the following beneficial effects:
(1) According to the invention, the step structure of the nanowire is prepared on the substrate, and then the superconducting material is prepared on the substrate with the step of the nanowire to form the superconducting nanowire structure, so that the superconducting material is prevented from being subjected to photoetching and etching processing;
(2) According to the invention, the metal electrode and the insulating protective layer are prepared on the superconducting nanowire structure by adopting the mask plate, so that the influence of the traditional electrode and protective layer patterning process on the characteristics of the superconducting nanowire is avoided, and the stability of the performance of the device is effectively ensured;
(3) The invention has simple preparation process and good compatibility, and can be widely applied to the technical field of infrared single photon detectors.
Drawings
FIGS. 1 to 5 are schematic sectional views of a simple production process of the present invention;
FIGS. 6 to 10 are top views of a simplified manufacturing process of the present invention;
fig. 11 is a schematic diagram of a layout structure of a superconducting nanowire in embodiment 1;
fig. 12 is an SEM image of the superconducting nanowire structure prepared in example 1.
Labeled in the figure as: 10-a substrate; 20-nanowire step structures; 30-a superconducting nanowire structure; 40-a mask A; 41-metal electrode contact layer; 50-a mask B; 51-insulating protective layer.
Detailed Description
All features disclosed in this specification may be combined in any combination, except features and/or steps that are mutually exclusive.
In order to make the technical solutions of the present invention better understood by those skilled in the art, the present invention will be further described in detail with reference to fig. 1 to 4 and specific examples.
A preparation method of a superconducting nanowire single photon detector comprises the following steps:
(1) Preparing a nanowire step structure 20 on a substrate 10 (as shown in fig. 1 and 6); as shown in fig. 2 and 7, the nanowire step structure adopts photolithography and ion etching techniques;
(2) Preparing a superconducting material on the substrate with the nanowire step structure 20 by adopting methods such as molecular beam epitaxy, magnetron sputtering and the like to form a superconducting nanowire structure 30, as shown in fig. 3 and 8;
(3) Preparing metal electrode contact layers 41 at both ends of the superconducting nanowire structure 31 by using a mask a40 and using an electron beam evaporation or thermal evaporation method, as shown in fig. 4 and 9;
(4) An insulating protective layer 51 is prepared on the superconducting nanowire structure 30 and the metal electrode contact layer 41 using electron beam evaporation using a mask B50, as shown in fig. 5 and 10.
The substrate 10 in step (1) comprises any one of strontium titanate, silicon oxide, gallium arsenide, and sapphire.
The nanowire step structure 20 in the step (1) is prepared by adopting photoetching and ion etching processes.
The nanowire step structure 20 is composed of a meandering nanowire at the center and electrode contact surfaces at both ends.
The area of the meandering nanowire region was 50 μm 2 ～500μm 2 The line width of the nano-wire is 50-300 nm, and the distance is 80-300 nm; the two ends of the nanowire are connected with electrode contact surfaces, and the area of each electrode contact surface is 60 multiplied by 60 mu m 2 ～200×200μm 2 (ii) a The height of the nanowire step structure is 50-500 nm, and the included angle between the side wall and the substrate is 70-90 degrees.
The superconducting material in the step (2) comprises any one of niobium nitride, niobium titanium nitride, tungsten silicide, magnesium diboride, iron-based superconducting and copper-based superconducting.
The superconducting material in the step (2) is prepared by adopting a molecular beam epitaxy or magnetron sputtering method, and the thickness of the superconducting material is 5-20 nm.
In the step (2), the superconducting nanowire structure 30 is obtained by covering a superconducting material on the nanowire step structure 20; the superconducting nanowire structure 30 conforms to the nanowire step structure 20.
When the metal electrode contact layer 41 is prepared in the step (3), the mask plate A40 is contacted with the substrate to shield the meandering nanowire area at the center, the electrode contact surfaces at the two ends are exposed, and the prepared metal electrode contact layer 41 completely covers the electrode contact surfaces at the two ends; the metal electrode contact layer 41 is prepared by adopting an electron beam evaporation or thermal evaporation method, the material of the metal electrode contact layer is made of any one or at least two of gold, titanium, aluminum, nickel and chromium, and the thickness is 50-400 nm.
When the insulating protection layer 51 is prepared in the step (4), the mask plate B50 is contacted with the substrate, part of the electrode contact surface area is shielded, the central meandering nanowire and part of the electrode contact surface area are exposed, and the prepared insulating protection layer 51 covers the central meandering nanowire and part of the electrode contact surface; the insulating protective layer material comprises any one of silicon oxide, silicon nitride and aluminum oxide, and is prepared by adopting an electron beam evaporation method, and the thickness of the insulating protective layer is 50-300 nm.
Example 1
As shown in fig. 1, a method for preparing a superconducting nanowire single photon detector comprises the following steps:
(1) Selecting an STO (strontium titanate) substrate as a device substrate, wherein the thickness of the STO substrate is 500 mu m, cleaning the surface of the STO substrate to remove stains, baking the STO substrate at 200 ℃ for 30 minutes to remove water vapor on the surface, and the step is shown in figure 1;
(2) Etching substrate by photolithography and ion etching, exposing the layout with electron beam, as shown in FIG. 11, performing ion etching with Ar to etch depth of 60nm, as shown in FIG. 2, and making the area of the meandering nanowire region be 15 × 15 μm 2 The line width of the nano-wire is 150nm, and the distance is 150nm. The included angle between the side wall and the substrate is 85 degrees, and the nanowire SEN structure is formed after etching, as shown in FIG. 12;
(3) Epitaxially growing an iron-based superconducting material on the step of the nanowire by adopting a molecular beam epitaxy technology, wherein the thickness of the iron-based superconducting material is 2nm, as shown in figure 3;
(4) Contacting the mask plate A with the STO substrate, shielding the meandering nanowire region at the center, exposing the electrode contact surfaces at both ends, and preparing a layer of Au electrode by electron beam evaporation200×300μm 2 The thickness of Au is 100nm, as shown in FIG. 4;
(5) And (3) contacting the mask plate B with the substrate, shielding part of the electrode contact surface area, exposing the central meandering nanowire and part of the electrode contact surface area, and preparing a silicon oxide protective layer by adopting an electron beam evaporation method, wherein the thickness of the silicon oxide is 250nm, as shown in FIG. 5.
The above-mentioned embodiments only express the specific embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present application. It should be noted that, for those skilled in the art, without departing from the technical idea of the present application, several changes and modifications can be made, which all belong to the protection scope of the present application.
Claims (8)
1. A preparation method of a superconducting nanowire single photon detector is characterized by comprising the following steps:
(1) Preparing a nanowire step structure (20) on a substrate (10);
(2) Preparing a superconducting material on the substrate with the nanowire step structure (20) to form a superconducting nanowire structure (30);
(3) Preparing metal electrode contact layers (41) at two ends of the superconducting nanowire structure (30) by using a mask plate A (40);
(4) Preparing an insulating protective layer (51) on the superconducting nanowire structure (30) and the metal electrode contact layer (41) by using a mask B (50);
when the metal electrode contact layer (41) is prepared in the step (3), the mask plate A (40) is contacted with the substrate to shield the meandering nanowire area at the center, the electrode contact surfaces at two ends are exposed, and the prepared metal electrode contact layer (41) completely covers the electrode contact surfaces at two ends; the metal electrode contact layer (41) is prepared by adopting an electron beam evaporation or thermal evaporation method, the metal electrode contact layer is made of any one or at least two alloys of gold, titanium, aluminum, nickel and chromium, and the thickness is 50-400 nm;
when the insulating protection layer (51) is prepared in the step (4), the mask plate B (50) is contacted with the substrate, part of the electrode contact surface area is shielded, the central meandering nanowire and part of the electrode contact surface area are exposed, and the prepared insulating protection layer (51) covers the central meandering nanowire and part of the electrode contact surface; the insulating protective layer material comprises any one of silicon oxide, silicon nitride and aluminum oxide, and is prepared by adopting an electron beam evaporation method, and the thickness of the insulating protective layer is 50-300 nm.
2. The method of claim 1 wherein the substrate (10) in step (1) comprises any one of strontium titanate, silicon oxide, gallium arsenide, and sapphire.
3. The method for preparing a superconducting nanowire single photon detector according to claim 1, wherein the nanowire step structure (20) in the step (1) is prepared by photolithography and ion etching.
4. The method of claim 1 or 3 wherein said nanowire step structure (20) is comprised of a central meandering nanowire and electrode contact surfaces at both ends.
5. The method for preparing a superconducting nanowire single photon detector according to claim 4, wherein the area of the meandering nanowire region is 50 μm2 to 500 μm2, the line width of the nanowire is 50 to 300nm, and the pitch is 80 to 300nm; two ends of the nanowire are connected with electrode contact surfaces, and the area of each electrode contact surface is 60 multiplied by 60 mu m 2-200 multiplied by 200 mu m2; the height of the nanowire step structure is 50-500 nm, and the included angle between the side wall and the substrate is 70-90 degrees.
6. The method for preparing a superconducting nanowire single photon detector according to claim 1, wherein the superconducting material in step (2) comprises any one of niobium nitride, niobium titanium nitride, tungsten silicide, magnesium diboride, iron-based superconductors and copper-based superconductors.
7. The method for preparing a superconducting nanowire single photon detector according to claim 1 or 6, wherein the superconducting material in the step (2) is prepared by molecular beam epitaxy or magnetron sputtering, and the thickness of the superconducting material is 5-20 nm.
8. The method for preparing a superconducting nanowire single photon detector according to claim 1, wherein in the step (2), the superconducting nanowire structure (30) is formed by covering a superconducting material on the nanowire step structure (20); the superconducting nanowire structure (30) is in accordance with the nanowire step structure (20).
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| CN113257986A (en) * | 2021-05-11 | 2021-08-13 | 中国科学院上海微系统与信息技术研究所 | Superconducting nanowire single photon detector based on super-surface structure and preparation method thereof |
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