CN104167452B - A kind of superconducting single-photon detector with phase grating and preparation method thereof - Google Patents
A kind of superconducting single-photon detector with phase grating and preparation method thereof Download PDFInfo
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- CN104167452B CN104167452B CN201410395986.7A CN201410395986A CN104167452B CN 104167452 B CN104167452 B CN 104167452B CN 201410395986 A CN201410395986 A CN 201410395986A CN 104167452 B CN104167452 B CN 104167452B
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- phase grating
- niobium nitride
- photon detector
- nano wire
- superconducting single
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- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000002070 nanowire Substances 0.000 claims abstract description 48
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 claims abstract description 40
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 36
- 239000000377 silicon dioxide Substances 0.000 claims description 18
- 235000012239 silicon dioxide Nutrition 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 239000012780 transparent material Substances 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 238000001514 detection method Methods 0.000 abstract description 7
- 238000010521 absorption reaction Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 4
- 238000004088 simulation Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 7
- UOEAYRCWZFDSNC-UHFFFAOYSA-N [N].[Ti].[Nb] Chemical compound [N].[Ti].[Nb] UOEAYRCWZFDSNC-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000002887 superconductor Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of superconducting single-photon detector with phase grating and preparation method thereof.The superconducting single-photon detector of this band phase grating is provided with phase grating on the nanowire region of routine based on the superconducting single-photon detector of niobium nitride.The grid height of phase grating is the odd-multiple of thickness corresponding to lambda1-wavelength π phase place.Phase grating on nanowire region produces light beam interferes focusing effect, and niobium nitride nano wire is positioned at focal position, thus improves the absorption efficiency of niobium nitride nano wire to photon.Simulation result shows, the superconducting nano-wire single-photon detector of this band phase grating, at visible ray and infrared multiple frequency bands, all there is very high detection efficient, 850? nm wavelength, the absorption efficiency of photon is up to 72%.
Description
Technical field
The present invention relates to a kind of high-sensitive single photon or atomic low light signals detector, particularly based on the superconducting single-photon detector of niobium nitride, can be applicable to the single photon of visible ray and near infrared band or the detection of atomic low light signals.
Background technology
Superconducting nano-wire single-photon detector studies single-photon detector structure the most popular in the world at present, it utilizes very thin superconducting thin film (usual thickness is 4nm to 8nm), be prepared into the nano wire of wide 80nm, below superconduction critical temperature, pass to the bias current lower than superconduction critical electric current, beat when photon and absorbed formation heat island by nano wire on nano wire, current density on nano wire is made to be greater than Superconducting Current Density, thus quench, produce a potential pulse, be read out circuit to obtain, obtain the response of a photon.Be used for doing superconductor mainly niobium nitride and two kinds, the niobium titanium nitrogen of nano wire at present, along with the research of superconductor, more material such as tungsten silicide, niobium silicide etc. are applied to be prepared on superconducting single-photon device.But at present because niobium nitride film itself is not high to the absorption efficiency of light, cause the system looks inefficiency of superconducting single-photon detector.Simultaneously because the detection rate of superconducting nano-wire single-photon detector is relevant with the dynamic inductance of nano wire, dynamic inductance is larger, detection rate is lower, and dynamic inductance and nanowire length linear, consider detection rate and reduce dynamic inductance, to nanowire length, required by namely useful detection area has, so the preparation of large-area superconducting single-photon detector difficulty.
Summary of the invention
Problem to be solved by this invention improves the efficiency of nano wire absorb photons, improves detector sensitivity.
For solving the problem, the scheme that the present invention adopts is as follows:
With a superconducting single-photon detector for phase grating, the nanowire region of superconducting single-photon detector is provided with phase grating; The grid height of described phase grating is the odd-multiple of thickness corresponding to lambda1-wavelength π phase place.
Further, according to the superconducting single-photon detector of band phase grating of the present invention, this superconducting single-photon detector is based on niobium nitride.
Further, according to the superconducting single-photon detector of band phase grating of the present invention, comprise HR-Si substrate, reflector, niobium nitride nano wire and phase grating; Described niobium nitride nano wire is laid on reflector, forms nanowire region; Described reflector is made up of transparent material, is laid on HR-Si substrate, between niobium nitride nano wire and HR-Si substrate; The two ends of described niobium nitride nano wire are provided with electrode; Described phase grating is arranged on niobium nitride nano wire, is made up of transparent material.
Further, according to the superconducting single-photon detector of band phase grating of the present invention, described reflector and phase grating are made up of earth silicon material.
Further, according to the superconducting single-photon detector of band phase grating of the present invention, the thickness of described phase grating is
wherein, λ is lambda1-wavelength, n
1for phase grating material refractive index, n is positive integer.
Further, according to the superconducting single-photon detector of band phase grating of the present invention, the thickness in described reflector is
wherein, λ is lambda1-wavelength, n
1for reflector material refractive index, n is positive integer.
Further, according to the superconducting single-photon detector of band phase grating of the present invention, the grid height of described phase grating is
wherein, λ is lambda1-wavelength, n
1for phase grating material refractive index, n
2for the refractive index of the outer medium of phase grating, n is positive integer.
Further, according to the preparation method of the superconducting single-photon detector of band phase grating of the present invention, comprise the steps:
S1: grow silicon dioxide reflector on HR-Si substrate;
S2: the technique growth niobium nitride film adopting magnetron sputtering on silicon dioxide reflector;
S3: adopt photoetching process to prepare gold film electrode in niobium nitride film;
S4: adopt electron beam exposure alignment and use reactive ion etching machine to etch and prepare niobium nitride nano wire;
S5: grow silicon dioxide phase grating layer on niobium nitride nano wire;
S6: photoetching on silicon dioxide phase grating layer also prepares phase grating by the method for etching.
Technique effect of the present invention is as follows: the phase grating of superconducting single-photon detector on nanowire region of band phase grating of the present invention produces light beam interferes focusing effect, niobium nitride nano wire is positioned at focal position, thus improves the absorption efficiency of niobium nitride nano wire to photon.Simulation result shows, the superconducting nano-wire single-photon detector of this band phase grating, at visible ray and infrared multiple frequency bands, all have very high detection efficient, at 850nm wavelength, the absorption efficiency of photon is up to 72%, at 684nm, 732nm, 924nm, 1256nm and 1426nm absorption efficiency reaches 70% respectively, 60.73%, 61.7%, 41.2%, and46.5%.。
Accompanying drawing explanation
Fig. 1 is the structural representation of superconducting single-photon detector of the present invention.
Fig. 2 is the perspective view after the removal phase grating of superconducting single-photon detector of the present invention.
Embodiment
Below in conjunction with Figure of description, the present invention is described in further details.
One, the structure of the superconducting single-photon detector of phase grating is with
As shown in Figure 1 and Figure 2, a kind of superconducting single-photon detector with phase grating, comprises HR-Si substrate 1, reflector 2, niobium nitride nano wire 3 and phase grating 5.Niobium nitride nano wire 3 is laid on reflector 2, forms nanowire region.Reflector 2 is made up of transparent material, is silicon dioxide specifically.Reflector 2 is laid on HR-Si substrate 1, between niobium nitride nano wire 3 and HR-Si substrate 1.The thickness L in reflector 2 meets
wherein, λ is lambda1-wavelength, n
1for reflector material refractive index, n is positive integer.The two ends of niobium nitride nano wire 3 are provided with electrode 4.Electrode 4 is made up of gold (Au).Phase grating 5 is arranged on niobium nitride nano wire 2, is made up of transparent material, is made up specifically of silicon dioxide.The thickness D of phase grating 5 meets
wherein, λ is lambda1-wavelength, n
1for phase grating material refractive index, n is positive integer.Phase grating 5 is provided with grid platform 51.The high H of grid platform 51, namely grid are high, are the odd-multiple of thickness corresponding to lambda1-wavelength π phase place, specifically
wherein, λ is lambda1-wavelength, n
1for phase grating material refractive index, n
2for the refractive index of the outer medium of phase grating, n is positive integer.
Phase grating in the present embodiment and reflector are made up of silicon dioxide, it will be appreciated by those skilled in the art that and its transparent material also can be adopted to make.In addition, the present embodiment is the superconducting single-photon detector based on niobium nitride, it will be appreciated by those skilled in the art that the superconducting single-photon detector that also can adopt based on other materials such as niobium titanium nitrogen.
Principle of the present invention is as follows, when light wave from upper surface incident through phase grating 5 time, due to the existence of grid platform 51, light beam is made to be divided into two bundles to there is the light of π phase place, mutual interference, form light and dark striped, convergent effect is produced to incident light wave, niobium nitride nano wire is positioned at focal position, light is absorbed through nanowire portion, other component permeate nano wires continue to move ahead, to silicon dioxide and silicon interface, due to the integral multiple that two-layer silicon dioxide thickness is just half-wavelength, overwhelming majority photon is reflected back toward, photon by local in silicon dioxide layer optics cavity, until all absorbed by niobium nitride nano wire.
Two, the preparation method of the superconducting single-photon detector of phase grating is with
The preparation method of the superconducting single-photon detector with phase grating in above-described embodiment comprises the steps:
S1: adopt plasma reinforced chemical vapour deposition (PECVD) technique to prepare silicon dioxide (SiO on High Resistivity Si (Si) substrate 1
2) reflector 2, silicon dioxide reflector 2 as optical resonator a part and as the substrate of niobium nitride (NbN) film growth.
S2: adopt DC magnetron sputtering process to grow the thick niobium nitride film of 8nm on silicon dioxide reflector 2.
S3: adopt photoetching and rf magnetron sputtering growth gold thin film in niobium nitride film, then prepare gold electrode 4 by stripping.
S4: the niobium nitride nano wire 3 wriggled by electron beam exposure system alignment and reactive ion etching (RIE) preparation.
S5: use plasma reinforced chemical vapour deposition (PECVD) to grow silicon dioxide grating layer.
S6: use photoetching and reactive ion etching (RIE) etching groove, prepare phase grating 5.
Claims (5)
1. the superconducting single-photon detector with phase grating, is characterized in that, this superconducting single-photon detector, based on niobium nitride, comprises HR-Si substrate, reflector, niobium nitride nano wire and phase grating; Described niobium nitride nano wire is laid on reflector, forms nanowire region; Described reflector is made up of transparent material, is laid on HR-Si substrate, between niobium nitride nano wire and HR-Si substrate; The two ends of described niobium nitride nano wire are provided with electrode; Described phase grating is arranged on niobium nitride nano wire, is made up of transparent material; Described phase grating is provided with grid platform; The high H of described grid platform is
wherein, λ is lambda1-wavelength, n
1for phase grating material refractive index, n
1for the refractive index of the outer medium of phase grating, n is positive integer.
2. the superconducting single-photon detector of band phase grating as claimed in claim 1, it is characterized in that, described reflector is made up of earth silicon material.
3. the superconducting single-photon detector of band phase grating as claimed in claim 1, it is characterized in that, described phase grating is made up of earth silicon material.
4. the superconducting single-photon detector of band phase grating as claimed in claim 1, it is characterized in that, the thickness of described phase grating is
Wherein, λ is lambda1-wavelength, n
1for phase grating material refractive index, n is positive integer.
5. the preparation method of the superconducting single-photon detector of the band phase grating according to any one of Claims 1-4, is characterized in that, comprise the steps:
S1: grow silicon dioxide reflector on HR-Si substrate;
S2: the technique growth niobium nitride film adopting magnetron sputtering on silicon dioxide reflector;
S3: adopt photoetching process to prepare gold film electrode in niobium nitride film;
S4: adopt electron beam exposure alignment and use reactive ion etching machine to etch and prepare niobium nitride nano wire;
S5: grow silicon dioxide phase grating layer on niobium nitride nano wire;
S6: photoetching on silicon dioxide phase grating layer also prepares phase grating by the method for etching.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104835905A (en) * | 2015-05-27 | 2015-08-12 | 南京大学 | Polarized nonsensitive efficient superconducting nanowire single photon detector |
| CN106558632B (en) * | 2015-09-17 | 2018-04-03 | 中国科学院上海微系统与信息技术研究所 | High polarization extinction ratio superconducting nano-wire single-photon detector |
| CN109148637B (en) * | 2018-09-20 | 2020-10-02 | 南京邮电大学 | Single photon avalanche diode detector with echelle grating structure and manufacturing method |
| CN109411567A (en) * | 2018-11-06 | 2019-03-01 | 南京大学 | A method of promoting superconducting nano-wire device superconductivity |
| CN113252191A (en) * | 2021-04-06 | 2021-08-13 | 华南师范大学 | Large-area detection superconducting single-photon detector integrated with high-contrast grating |
| CN113257986A (en) * | 2021-05-11 | 2021-08-13 | 中国科学院上海微系统与信息技术研究所 | Superconducting nanowire single photon detector based on super-surface structure and preparation method thereof |
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| CN102829884A (en) * | 2012-09-10 | 2012-12-19 | 清华大学 | High-speed superconducting nanowire single-photon detector (SNSPD) with strong absorption structure and preparation method of high-speed SNSPD |
| CN103165723A (en) * | 2013-03-26 | 2013-06-19 | 中国科学院上海技术物理研究所 | Converging enhancement photo-response superconductivity single photon detector and preparing method thereof |
| CN103872155A (en) * | 2014-03-19 | 2014-06-18 | 南京大学 | Superconductivity single photon detector with surface plasmon enhanced and manufacturing method thereof |
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| US6812464B1 (en) * | 2000-07-28 | 2004-11-02 | Credence Systems Corporation | Superconducting single photon detector |
| FR2891400B1 (en) * | 2005-09-28 | 2007-10-26 | Commissariat Energie Atomique | ULTRASENSITIVE OPTICAL DETECTOR WITH HIGH TIME RESOLUTION USING A LEAKAGE MODE OF A PLANAR WAVEGUIDE AND METHODS OF MAKING SAME |
| FR2906934B1 (en) * | 2006-10-05 | 2009-01-30 | Commissariat Energie Atomique | ULTRASENSITIVE OPTICAL SENSOR WITH HIGH TEMPORAL RESOLUTION USING NETWORK COUPLING. |
| WO2011150321A1 (en) * | 2010-05-28 | 2011-12-01 | Massachusetts Institute Of Technology | Photon detector based on superconducting nanowires |
| US9726536B2 (en) * | 2011-12-23 | 2017-08-08 | Technion Research And Development Foundation Limited | Fiber optical superconducting nanowire single photon detector |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102829884A (en) * | 2012-09-10 | 2012-12-19 | 清华大学 | High-speed superconducting nanowire single-photon detector (SNSPD) with strong absorption structure and preparation method of high-speed SNSPD |
| CN103165723A (en) * | 2013-03-26 | 2013-06-19 | 中国科学院上海技术物理研究所 | Converging enhancement photo-response superconductivity single photon detector and preparing method thereof |
| CN103872155A (en) * | 2014-03-19 | 2014-06-18 | 南京大学 | Superconductivity single photon detector with surface plasmon enhanced and manufacturing method thereof |
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