CN108732748A - Mostly band Meta Materials absorber design method based on enhancing high order resonance mould absorptivity - Google Patents
Mostly band Meta Materials absorber design method based on enhancing high order resonance mould absorptivity Download PDFInfo
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Abstract
The mostly band Meta Materials absorber design method based on enhancing high order resonance mould absorptivity that the invention discloses a kind of, is related to Meta Materials field.Mostly band Meta Materials absorber design method based on enhancing high order resonance mould absorptivity is applied in the Meta Materials absorber, and the Meta Materials absorber top layer includes a periodic micro structure, and the periodic micro structure is at least made of a pair of of basic structural unit；Reduce the spacing of at least a pair of of basic structural unit in the periodic micro structure of the Meta Materials absorber top layer.The present invention forms near-field coupling to achieve the purpose that improve the absorptivity of the high-order Plasmon Resonance pattern of the basic structural unit by reducing the spacing of at least a pair of of basic structural unit.
Description
Technical field
The present invention relates to Meta Materials field more particularly to a kind of mostly band Meta Materials based on enhancing high order resonance mould absorptivity
Absorber design method.
Background technology
Meta Materials possess the special nature not having in nature, and this special nature usually can be by changing nano junction
Structure rather than chemical composition manipulate.Meta Materials perfect absorber is as a kind of novel Meta Materials, since it is in certain spectrum
Range can reach more than 90% absorptivity, therefore in recent years in heat radiator, bio-sensing, miniature radiation heatflowmeter and infrared
Application in terms of detection causes prodigious concern.The structure for the Meta Materials absorber usually studied all is metal-dielectric-gold
Thriple decker sandwich's structure of category.Bottom is metallic film, and middle layer is thin dielectric film, and top is periodical metal oscillator.Enter
The electromagnetic wave penetrated can cause the collective of electronics in periodical metal oscillator to be shaken, that is, inspire surface plasma resonance mould
Formula.However, the Meta Materials absorber based on the plasma resonance in sandwich structure, an oscillator is typically only capable to that there are one absorb
Band, this absorption band come from basic mode.Single tape problem significantly limits the application of Meta Materials absorber.
In order to solve the problems, such as that the oscillator of different sizes is generally combined together by single tape, people, each size
Oscillator can form an absorption band, obtain mostly band by way of element combination in this way.The method of this element combination is only
It is that basic mode is utilized, so when absorption band number is more, corresponding periodic unit structure can be extremely complex.In fact, in addition to base
Outside mould, oscillator is also that can inspire high order resonance modes, and only the absorptivity of high order resonance modes is very low, so oscillator
The method of combination can not utilize high-order mode.
Invention content
It is intended to improve high-order Plasmon Resonance mode absorbent rate to design mostly band in view of the above-mentioned problems, now providing one kind
The mostly band Meta Materials absorber design method based on enhancing high order resonance mould absorptivity of absorber.
A kind of mostly band Meta Materials absorber design method based on enhancing high order resonance mould absorptivity, the Meta Materials absorb
Body top layer includes a periodic micro structure, and the periodic micro structure is at least made of a pair of of basic structural unit；
Reduce the spacing of at least a pair of of basic structural unit in the periodic micro structure of the Meta Materials absorber top layer.
Preferably, after diminution the spacing of at least a pair of of basic structural unit in 5nm between 80nm.
Preferably, the Meta Materials absorber includes：
Metallic substrate layer, thin dielectric film are deposited on the metallic substrate layer upper dielectric film, the micro- knot of periodicity
Structure is etched in the thin dielectric film surface.
Preferably, the periodic micro structure is made of a pair of of basic structural unit.
Preferably, the pair of basic structural unit includes a straight-flanked ring and an annulus, and the annulus is located at the rectangle
In ring, the circle ring center overlaps with the straight-flanked ring center.
Preferably, the metallic substrate layer uses silver film, the thin dielectric film to use zinc sulfide film, the period
Property micro-structure be made of silver-colored material, or
The metallic substrate layer uses aluminum membranous layer, the thin dielectric film to use zinc sulfide film, the micro- knot of periodicity
Structure is made of aluminium material.
Preferably, straight-flanked ring is square ring；
The metallic substrates layer height is 200nm；
The thin dielectric film height is 80nm, a length of 1000nm, width 1000nm；
Basic structural unit annulus a height of 200nm, internal diameter 250nm, outer diameter 460nm；
The square a height of 200nm of ring, internal diameter 600nm, outer diameter 740nm；
Annulus and square interannular are away from for 70nm.
Preferably, straight-flanked ring is square ring；
The metallic substrates layer height is 200nm；
The thin dielectric film height is 80nm, a length of 1000nm, width 1000nm；
Basic structural unit annulus a height of 200nm, internal diameter 250nm, outer diameter 460nm；
The square a height of 200nm of ring, internal diameter 560nm, outer diameter 700nm；
Annulus and square interannular are away from for 50nm.
Preferably, straight-flanked ring is square ring；
The metallic substrates layer height is 200nm；
The thin dielectric film height is 80nm, a length of 1000nm, width 1000nm；
Basic structural unit annulus a height of 200nm, internal diameter 250nm, outer diameter 460nm；
The square a height of 200nm of ring, internal diameter 520nm, outer diameter 660nm；
Annulus and square interannular are away from for 30nm.
Preferably, straight-flanked ring is square ring；
The metallic substrates layer height is 200nm；
The thin dielectric film height is 80nm, a length of 1000nm, width 1000nm；
Basic structural unit annulus a height of 200nm, internal diameter 250nm, outer diameter 460nm；
The square a height of 200nm of ring, internal diameter 480nm, outer diameter 620nm；
Annulus and square interannular are away from for 10nm.
The advantageous effect of above-mentioned technical proposal：
In the technical program, the spacing by reducing at least a pair of of basic structural unit forms near-field coupling and is carried to reach
The purpose of the absorptivity of the high-order Plasmon Resonance pattern of the high basic structural unit.
Description of the drawings
Fig. 1 is a kind of stereogram of embodiment of Meta Materials absorber of the present invention；
Fig. 2 is the vertical view of the Meta Materials absorber；
Fig. 3 be in the present invention when reduce annulus and square interannular away from when, the high-order plasmon of the first embodiment is total
The schematic diagram of mode absorbent rate of shaking enhancing；
Fig. 4 (a-d) be in the present invention when reduce annulus and square interannular away from when, the high-order plasma of the first embodiment swashs
The electric-field intensity distribution figure of first resonance mode；
Fig. 5 is the curve graph of the absorptivity of the high-order Plasmon Resonance pattern of the first embodiment；
Fig. 6 be in the present invention when reduce annulus and square interannular away from when, the high-order plasmon of second of embodiment is total
The schematic diagram of mode absorbent rate of shaking enhancing；
When Fig. 7 (a-d) in the present invention when reduce annulus and square interannular away from when, the high-order plasma of second of embodiment swashs
The electric-field intensity distribution figure of first resonance mode；
Fig. 8 is the curve graph of the absorptivity of the high-order Plasmon Resonance pattern of second of embodiment.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art obtained under the premise of not making creative work it is all its
His embodiment, shall fall within the protection scope of the present invention.
It should be noted that in the absence of conflict, the feature in embodiment and embodiment in the present invention can phase
Mutually combination.
The invention will be further described in the following with reference to the drawings and specific embodiments, but not as limiting to the invention.
As shown in Figs. 1-2, a kind of mostly band Meta Materials absorber design method based on enhancing high order resonance mould absorptivity, institute
It includes a periodic micro structure to state Meta Materials absorber top layer, and the periodic micro structure is at least by a pair of of basic structural unit group
At；
Reduce the spacing of at least a pair of of basic structural unit in the periodic micro structure of the Meta Materials absorber top layer.
Further, after diminution the spacing of at least a pair of of basic structural unit in 5nm between 80nm.Basic structure list
Member is metal oscillator.
In the present embodiment, by reduce the spacing of at least a pair of of basic structural unit formed strong near-field coupling to
Achieve the purpose that the absorptivity for improving the high-order Plasmon Resonance pattern of the basic structural unit.Each basic structural unit
A corresponding basement membrane absorption band, when dwindle between basic structural unit apart from when, can be formed between basic structural unit strong
Strong near-field coupling can enhance the absorptivity of high-order Plasmon Resonance pattern, form an additional high-order absorption band.
High-order absorption band and basic mode absorption band collectively form mostly band Meta Materials perfect absorber.
Preferably, the Meta Materials absorber includes：
Metallic substrate layer, thin dielectric film are deposited on the metallic substrate layer upper dielectric film, the micro- knot of periodicity
Structure is etched in the thin dielectric film surface.
Preferably, the periodic micro structure is made of a pair of of basic structural unit.
As the first embodiment, the pair of basic structural unit can be but not limited to a straight-flanked ring and an annulus,
When basic structural unit include a straight-flanked ring and an annulus when, the annulus is located in the straight-flanked ring, the circle ring center and
The straight-flanked ring center overlaps.
Further, for the metallic substrate layer using silver-colored (Ag) film layer, the thin dielectric film is thin using zinc sulphide (ZnS)
Film, the periodic micro structure are made of silver-colored (Ag) material.
Situation 1：Straight-flanked ring is square ring；
Metallic substrates layer height T3For 200nm；
Thin dielectric film height T2It is 1000nm for 80nm, long P, wide P is 1000nm；
The high T of basic structural unit annulus1For 200nm, internal diameter L1For 250nm, outer diameter L2For 460nm；
The square a height of 200nm of ring, internal diameter L3For 600nm, outer diameter L4For 740nm, width W=(L4-L3)/2=70nm；
Annulus is (L with square ring space D3–L2)/2=70nm.
Situation 2：Straight-flanked ring is square ring；
Metallic substrates layer height T3For 200nm；
Thin dielectric film height T2Long P for 80nm, the thin dielectric film is 1000nm, and wide P is 1000nm；
The high T of basic structural unit annulus1For 200nm, internal diameter L1For 250nm, outer diameter L2For 460nm；
The square a height of 200nm of ring, internal diameter L3For 560nm, outer diameter L4For 700nm, width W=(L4-L3)/2=70nm；
Annulus is (L with square ring space D3–L2)/2=50nm.
Situation 3：Straight-flanked ring is square ring；
Metallic substrates layer height T3For 200nm；
Thin dielectric film height T2Long P for 80nm, the thin dielectric film is 1000nm, and wide P is 1000nm；
The high T of basic structural unit annulus1For 200nm, internal diameter L1For 250nm, outer diameter L2For 460nm；
The square a height of 200nm of ring, internal diameter L3For 520nm, outer diameter L4For 660nm, width W=(L4-L3)/2=70nm；
Annulus is (L with square ring space D3–L2)/2=30nm.
Situation 4：Straight-flanked ring is square ring；
Metallic substrates layer height T3For 200nm；
Thin dielectric film height T2Long P for 80nm, the thin dielectric film is 1000nm, and wide P is 1000nm；
Basic structural unit annulus T1A height of 200nm, internal diameter L1For 250nm, outer diameter L2For 460nm；
The square a height of 200nm of ring, internal diameter L3For 480nm, outer diameter L4For 620nm, width W=(L4-L3)/2=70nm；
Annulus is (L with square ring space D3–L2)/2=10nm.
Based on above-mentioned situation 1-4, that is, when annulus and square ring space D are reduced into 50nm, 30nm, 10nm from 70nm
When, the spectral absorption of Meta Materials absorber is as shown in figure 3, shown in the distribution such as Fig. 4 (a-d) in the directions electric field z of absorption peak f3.
Absorption peak f1Corresponding to square ring group this Plasmon Resonance pattern, f2Corresponding to the basic Plasmon Resonance of annulus
Pattern, that is, basic mode.Absorption peak f3Corresponding to the high-order Plasmon Resonance pattern of square ring, that is, high-order mode.When
Shorten square ring and annulus apart from when, form strong near-field coupling effect between square ring and annulus, lead to high-order etc.
The maximum value of the electric field strength in the directions z of ion plasmon resonance pattern increases to 10,16,21 from 5.6, and high-order plasmon
The absorptivity of resonance mode also increases to 37.4%, 67.7%, 95.3% from 17.6%.
In conclusion as shown in figure 5, when the spacing of square ring oscillator and circle-ring vibrator narrows down to 80nm from 110nm, high-order
The absorptivity of pattern just starts not change substantially, when the spacing of square ring oscillator and circle-ring vibrator narrows down to 5nm from 80nm, inhales
Yield is sharply increased with the diminution of spacing.In the present embodiment, oscillator is utilized to march into the arena the method for coupling, can by high-order etc. from
The absorptivity of sub- plasmon resonance pattern increases 95.3% from 17.6%, realizes three absorptions generated using two oscillators
The purpose of band.
In conjunction with shown in Fig. 1-Fig. 2, as second of embodiment, aluminium (Al) film layer can be used in the metallic substrate layer, described
Thin dielectric film uses zinc sulphide (ZnS) film, the periodic micro structure to be made of aluminium (Al) material.
Situation 1：Straight-flanked ring is square ring；
Metallic substrates layer height T3For 200nm；
Thin dielectric film height T2It is 1000nm for 80nm, long P, wide P is 1000nm；
The high T of basic structural unit annulus1For 200nm, internal diameter L1For 250nm, outer diameter L2For 460nm；
The square a height of 200nm of ring, internal diameter L3For 600nm, outer diameter L4For 740nm, width W=(L4-L3)/2=70nm；
Annulus is (L with square ring space D3–L2)/2=70nm.
Situation 2：Straight-flanked ring is square ring；
Metallic substrates layer height T3For 200nm；
Thin dielectric film height T2Long P for 80nm, the thin dielectric film is 1000nm, and wide P is 1000nm；
The high T of basic structural unit annulus1For 200nm, internal diameter L1For 250nm, outer diameter L2For 460nm；
The square a height of 200nm of ring, internal diameter L3For 560nm, outer diameter L4For 700nm, width W=(L4-L3)/2=70nm；
Annulus is (L with square ring space D3–L2)/2=50nm.
Situation 3：Straight-flanked ring is square ring；
Metallic substrates layer height T3For 200nm；
Thin dielectric film height T2Long P for 80nm, the thin dielectric film is 1000nm, and wide P is 1000nm；
The high T of basic structural unit annulus1For 200nm, internal diameter L1For 250nm, outer diameter L2For 460nm；
The square a height of 200nm of ring, internal diameter L3For 520nm, outer diameter L4For 660nm, width W=(L4-L3)/2=70nm；
Annulus is (L with square ring space D3–L2)/2=30nm.
Situation 4：Straight-flanked ring is square ring；
Metallic substrates layer height T3For 200nm；
Thin dielectric film height T2Long P for 80nm, the thin dielectric film is 1000nm, and wide P is 1000nm；
Basic structural unit annulus T1A height of 200nm, internal diameter L1For 250nm, outer diameter L2For 460nm；
The square a height of 200nm of ring, internal diameter L3For 480nm, outer diameter L4For 620nm, width W=(L4-L3)/2=70nm；
Annulus is (L with square ring space D3–L2)/2=10nm.
For the above situation 1-4, that is, when annulus and square ring space D are reduced into 50nm, 30nm, 10nm from 70nm
When, the spectral absorption of Meta Materials absorber is as shown in fig. 6, absorption peak f3The directions electric field z distribution such as Fig. 7 (a-d) shown in.
Absorption peak f1And f2Correspond respectively to the basic Plasmon Resonance pattern of square ring and annulus, that is, basic mode.Absorption peak f3
Corresponding to the high-order Plasmon Resonance pattern of square ring.When shorten square ring and annulus apart from when, in square ring and circle
Strong near-field coupling effect is formed between ring, leads to the electric field strength in the directions z of high-order Plasmon Resonance pattern most
Big value increases to 6.5,10.3 to 14.3 from 3.3, and the absorptivity of high-order Plasmon Resonance pattern is also successfully from 14%
Increase to 33%, 60% to 89%.So in the present embodiment, oscillator is utilized and marches into the arena the method for coupling, successfully by high-order etc.
The absorptivity of ion plasmon resonance pattern increases 89% from 14%, successfully utilizes three absorptions of two Harmonic Oscillators
Band.
As shown in figure 8, when the spacing of square ring oscillator and circle-ring vibrator narrows down to 80nm from 110nm, the suction of higher order mode
Yield just start do not change substantially, when the spacing of square ring oscillator and circle-ring vibrator narrows down to 5nm from 80nm, absorptivity with
The diminution of spacing sharply increases.
Further, for example and without limitation, thin dielectric film can be but not limited to silica (SiO2), silicon
(Si), alundum (Al2O3) (Al2O3), zinc sulphide (ZnS) etc..
Metallic substrate layer can be but not limited to gold, silver, aluminium, copper etc..
Periodic micro structure can be but not limited to gold, silver, aluminium, copper etc..
Pairs of metal oscillator can be but not limited to concentric square ring and annulus in top layer periodic micro structure.
The foregoing is merely preferred embodiments of the present invention, are not intended to limit embodiments of the present invention and protection model
It encloses, to those skilled in the art, should can appreciate that all with made by description of the invention and diagramatic content
Equivalent replacement and obviously change obtained scheme, should all be included within the scope of the present invention.
Claims (10)
1. a kind of enhancing high order resonance modes absorptivity designs the method mostly with Meta Materials absorber, Meta Materials absorber top
Layer includes a periodic micro structure, and the periodic micro structure is at least made of a pair of of basic structural unit；It is characterized in that：
Reduce the spacing of at least a pair of of basic structural unit in the periodic micro structure of the Meta Materials absorber top layer.
2. enhancing high order resonance modes absorptivity according to claim 1 designs the method mostly with Meta Materials absorber,
Be characterized in that, after diminution the spacing of at least a pair of of basic structural unit in 5nm between 80nm.
3. enhancing high order resonance modes absorptivity according to claim 1 designs the method mostly with Meta Materials absorber,
It is characterized in that, the Meta Materials absorber includes：
Metallic substrate layer, thin dielectric film are deposited on the metallic substrate layer upper dielectric film, and the periodic micro structure is carved
It loses in the thin dielectric film surface.
4. enhancing high order resonance modes absorptivity according to claim 1 or 3 designs the method mostly with Meta Materials absorber,
It is characterized in that, the periodic micro structure is made of a pair of of basic structural unit.
5. enhancing high order resonance modes absorptivity according to claim 4 designs the method mostly with Meta Materials absorber,
It is characterized in that, the pair of basic structural unit includes a straight-flanked ring and an annulus, and the annulus is located in the straight-flanked ring, institute
Circle ring center is stated to overlap with the straight-flanked ring center.
6. enhancing high order resonance modes absorptivity according to claim 5 designs the method mostly with Meta Materials absorber,
It is characterized in that, the metallic substrate layer uses silver film, the thin dielectric film to use zinc sulfide film, the micro- knot of periodicity
Structure is made of silver-colored material, or
The metallic substrate layer uses aluminum membranous layer, the thin dielectric film that zinc sulfide film, the periodic micro structure is used to adopt
It is made of aluminium material.
7. enhancing high order resonance modes absorptivity according to claim 6 designs the method mostly with Meta Materials absorber,
It is characterized in that, straight-flanked ring is square ring；
A length of 1000nm of the thin dielectric film, width 1000nm；
Basic structural unit annulus a height of 200nm, internal diameter 250nm, outer diameter 460nm；
The square a height of 200nm of ring, internal diameter 600nm, outer diameter 740nm；
Annulus and square interannular are away from for 70nm.
8. enhancing high order resonance modes absorptivity according to claim 6 designs the method mostly with Meta Materials absorber,
It is characterized in that, straight-flanked ring is square ring；
The metallic substrates layer height is 200nm；
The thin dielectric film height is 80nm, a length of 1000nm, width 1000nm；
Basic structural unit annulus a height of 200nm, internal diameter 250nm, outer diameter 460nm；
The square a height of 200nm of ring, internal diameter 560nm, outer diameter 700nm；
Annulus and square interannular are away from for 50nm.
9. enhancing high order resonance modes absorptivity according to claim 6 designs the method mostly with Meta Materials absorber,
It is characterized in that, straight-flanked ring is square ring；
The metallic substrates layer height is 200nm；
The thin dielectric film height is 80nm, a length of 1000nm, width 1000nm；
Basic structural unit annulus a height of 200nm, internal diameter 250nm, outer diameter 460nm；
The square a height of 200nm of ring, internal diameter 520nm, outer diameter 660nm；
Annulus and square interannular are away from for 30nm.
10. enhancing high order resonance modes absorptivity according to claim 6 designs the method mostly with Meta Materials absorber,
It is characterized in that, straight-flanked ring is square ring；
The metallic substrates layer height is 200nm；
The thin dielectric film height is 80nm, a length of 1000nm, width 1000nm；
Basic structural unit annulus a height of 200nm, internal diameter 250nm, outer diameter 460nm；
The square a height of 200nm of ring, internal diameter 480nm, outer diameter 620nm；
Annulus and square interannular are away from for 10nm.
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Application publication date: 20181102 |