JP2014237819A5 - - Google Patents

Claims (14)

A multi-layer stack, the multi-layer stack comprising a core layer;
A dielectric layer extending across the core layer;
An absorption layer extending across the dielectric layer with an interface therebetween,
The interface between the dielectric layer and the absorbing layer has a substantially zero electric field at a first incident electromagnetic wave length, a large electric field at a second incident electromagnetic wave length, and the second The incident electromagnetic wave length is not equal to the first incident electromagnetic wave length,
The multilayer stack is a single narrow reflection band having a full width at half maximum (FWHM) of less than 200 nm in the visible spectrum when viewed from an angle between 0 ° and 45 ° resulting in a high chroma omnidirectional structural color If, possess a minimum color change with the color tone shift of less than 30 °,
The dielectric layer has a thickness of 2 · quarter wave (QW) or less of the center wavelength of the narrow reflection band.
High chroma omnidirectional structure color multilayer structure. The core layer has a complex index of refraction represented by the formula RI ₁ = n ₁ + ik ₁ , where n ₁ << k ₁ , where RI ₁ is the complex index of refraction and n ₁ is the core layer the refractive index of, k ₁ is the extinction coefficient of the core layer, i is a √-1, high chroma omnidirectional structural color multilayer structure of claim 1.   The high chroma omnidirectional structural color multilayer structure of claim 2, wherein the core layer is formed from a material selected from the group consisting of silver, copper, chromium, aluminum, gold and alloys thereof.   4. The high chroma omnidirectional structural color multilayer structure of claim 3, wherein the core layer is formed from a material selected from the group consisting of the aluminum and its alloys.   5. The high chroma omnidirectional structural color multilayer structure of claim 4, wherein the core layer has a thickness between 50 nm and 200 nm. Said dielectric _{layer, TiO 2, MgF 2, ZnS} , HfO 2, Nb 2 O 5, Ta 2 O 5, SiO 2 and at least one of their combinations, high chroma all directions according to claim 5 Structural color multilayer structure. The high chroma omnidirectional structural color multilayer structure of claim 6 , wherein the dielectric layer is ZnS. The absorbing layer has a complex refractive index represented by the formula _{RI 2 = n 2 + ik 2} , an _{n 2} ≒ _{k 2,} wherein RI ₂ is the complex refractive index, _{n 2} is the dielectric layer The high chroma omnidirectional structural color multilayer structure according to claim 7 , wherein the refractive index is k ₂ is an extinction coefficient of the absorbing layer. The absorption layer is formed of a material selected from at least one of chromium, tantalum, tungsten, molybdenum, titanium, titanium nitride, niobium, cobalt, silicon, germanium, nickel, palladium, vanadium, iron oxide, and alloys thereof. The high chroma omnidirectional structural color multilayer structure according to claim 8 . The high chroma omnidirectional structural color multilayer structure of claim 9 , wherein the absorbing layer is formed from at least one of the chromium and its alloys. The high chroma omnidirectional structural color multilayer structure of claim 10 , wherein the absorption layer has a thickness between 5 nm and 20 nm. The high chroma omnidirectional structural color multilayer structure of claim 11 , further comprising another dielectric layer extending over an outer surface of the absorbing layer. The high chroma omnidirectional structural color multilayer structure of claim 11 , further comprising another absorbing layer between the core layer and the dielectric layer. The high chroma omnidirectional structural color multilayer structure of claim 12 , further comprising another absorbing layer between the core layer and the dielectric layer.