CN106170739B - 带有具有可调整电阻的电阻器开关的管芯 - Google Patents

带有具有可调整电阻的电阻器开关的管芯 Download PDF

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Publication number
CN106170739B
CN106170739B CN201580018580.XA CN201580018580A CN106170739B CN 106170739 B CN106170739 B CN 106170739B CN 201580018580 A CN201580018580 A CN 201580018580A CN 106170739 B CN106170739 B CN 106170739B
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China
Prior art keywords
resistance
circuit
die
package
resistor
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CN201580018580.XA
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English (en)
Chinese (zh)
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CN106170739A (zh
Inventor
R·M·库茨
M·波波维奇
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Qualcomm Inc
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Qualcomm Inc
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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26—Power supply means, e.g. regulation thereof
    • G06F1/32—Means for saving power
    • G06F1/3203—Power management, i.e. event-based initiation of a power-saving mode
    • G06F1/3234—Power saving characterised by the action undertaken
    • G06F1/3287—Power saving characterised by the action undertaken by switching off individual functional units in the computer system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/62—Protection against overvoltage, e.g. fuses, shunts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/647—Resistive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Automation & Control Theory (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Electromagnetism (AREA)
  • Computing Systems (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Direct Current Feeding And Distribution (AREA)
  • Attenuators (AREA)
  • Measurement Of Current Or Voltage (AREA)
CN201580018580.XA 2014-04-10 2015-03-09 带有具有可调整电阻的电阻器开关的管芯 Active CN106170739B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/250,150 US9377804B2 (en) 2014-04-10 2014-04-10 Switchable package capacitor for charge conservation and series resistance
US14/250,150 2014-04-10
PCT/US2015/019526 WO2015156940A2 (en) 2014-04-10 2015-03-09 Switchable package capacitor for charge conservation and series resistance

Publications (2)

Publication Number Publication Date
CN106170739A CN106170739A (zh) 2016-11-30
CN106170739B true CN106170739B (zh) 2017-10-13

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580018580.XA Active CN106170739B (zh) 2014-04-10 2015-03-09 带有具有可调整电阻的电阻器开关的管芯

Country Status (7)

Country Link
US (2) US9377804B2 (enExample)
EP (1) EP3130008B1 (enExample)
JP (2) JP6509904B2 (enExample)
KR (1) KR102154089B1 (enExample)
CN (1) CN106170739B (enExample)
BR (1) BR112016023615A2 (enExample)
WO (1) WO2015156940A2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9377804B2 (en) 2014-04-10 2016-06-28 Qualcomm Incorporated Switchable package capacitor for charge conservation and series resistance
US20160173082A1 (en) * 2014-12-12 2016-06-16 Mediatek Inc. Method for performing impedance profile control of a power delivery network in an electronic device, and associated apparatus
US10581414B2 (en) * 2015-10-14 2020-03-03 Mediatek Inc. Semiconductor integrated circuit device
US10664035B2 (en) * 2017-08-31 2020-05-26 Qualcomm Incorporated Reconfigurable power delivery networks
US11437366B2 (en) * 2017-09-29 2022-09-06 Intel Corporation Tunable passive semiconductor elements
JP6652998B1 (ja) * 2018-09-03 2020-02-26 レノボ・シンガポール・プライベート・リミテッド 情報処理装置および制御方法
CN117219145A (zh) * 2020-08-06 2023-12-12 长江存储科技有限责任公司 用于三维存储器的多管芯峰值功率管理
EP4513487A3 (en) 2020-11-26 2025-05-21 Yangtze Memory Technologies Co., Ltd. Dynamic peak power management for multi-die operations
KR20220127451A (ko) * 2021-03-11 2022-09-20 삼성전자주식회사 시스템 온 칩 및 이를 포함하는 전자 시스템

Citations (6)

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US6072690A (en) * 1998-01-15 2000-06-06 International Business Machines Corporation High k dielectric capacitor with low k sheathed signal vias
CN101807105A (zh) * 2009-02-17 2010-08-18 鸿富锦精密工业（深圳）有限公司 时序控制电路
WO2012014014A2 (en) * 2010-07-27 2012-02-02 Freescale Semiconductor, Inc. Multi-Core Processor and Method of Power Management of a Multi-Core Processor
CN102692596A (zh) * 2011-03-24 2012-09-26 飞思卡尔半导体公司 可选择阈值复位电路
JP2012190862A (ja) * 2011-03-09 2012-10-04 Nec Corp 半導体集積回路の電源制御システムおよび電源制御方法
CN103226368A (zh) * 2012-01-27 2013-07-31 亚德诺半导体股份有限公司 快速加电偏置电压电路

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US6072690A (en) * 1998-01-15 2000-06-06 International Business Machines Corporation High k dielectric capacitor with low k sheathed signal vias
CN101807105A (zh) * 2009-02-17 2010-08-18 鸿富锦精密工业（深圳）有限公司 时序控制电路
WO2012014014A2 (en) * 2010-07-27 2012-02-02 Freescale Semiconductor, Inc. Multi-Core Processor and Method of Power Management of a Multi-Core Processor
JP2012190862A (ja) * 2011-03-09 2012-10-04 Nec Corp 半導体集積回路の電源制御システムおよび電源制御方法
CN102692596A (zh) * 2011-03-24 2012-09-26 飞思卡尔半导体公司 可选择阈值复位电路
CN103226368A (zh) * 2012-01-27 2013-07-31 亚德诺半导体股份有限公司 快速加电偏置电压电路

Also Published As

Publication number Publication date
US9377804B2 (en) 2016-06-28
BR112016023615A2 (pt) 2017-08-15
JP2017520104A (ja) 2017-07-20
JP6509904B2 (ja) 2019-05-08
EP3130008B1 (en) 2020-04-29
WO2015156940A3 (en) 2015-12-23
US20160266596A1 (en) 2016-09-15
EP3130008A2 (en) 2017-02-15
KR102154089B1 (ko) 2020-09-09
US20150293551A1 (en) 2015-10-15
JP2019145814A (ja) 2019-08-29
CN106170739A (zh) 2016-11-30
KR20160140712A (ko) 2016-12-07
US9618957B2 (en) 2017-04-11
WO2015156940A2 (en) 2015-10-15

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