CN106165065B - 用于产生掩模的高密度配准映射图的方法、系统及计算机程序产品 - Google Patents

用于产生掩模的高密度配准映射图的方法、系统及计算机程序产品 Download PDF

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Publication number
CN106165065B
CN106165065B CN201580018393.1A CN201580018393A CN106165065B CN 106165065 B CN106165065 B CN 106165065B CN 201580018393 A CN201580018393 A CN 201580018393A CN 106165065 B CN106165065 B CN 106165065B
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China
Prior art keywords
mask
registration
points
tool
data
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CN201580018393.1A
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Chinese (zh)
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CN106165065A (zh
Inventor
F·拉斯克
M·M·丹尼斯帕纳
P·苏布拉马尼扬
熊亚霖
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KLA Corp
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KLA Tencor Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G06F30/398—Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • General Engineering & Computer Science (AREA)
  • Evolutionary Computation (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Image Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
CN201580018393.1A 2014-04-02 2015-04-02 用于产生掩模的高密度配准映射图的方法、系统及计算机程序产品 Active CN106165065B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461974001P 2014-04-02 2014-04-02
US61/974,001 2014-04-02
PCT/US2015/024060 WO2015153872A1 (en) 2014-04-02 2015-04-02 A method, system and computer program product for generating high density registration maps for masks

Publications (2)

Publication Number Publication Date
CN106165065A CN106165065A (zh) 2016-11-23
CN106165065B true CN106165065B (zh) 2019-08-30

Family

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CN201580018393.1A Active CN106165065B (zh) 2014-04-02 2015-04-02 用于产生掩模的高密度配准映射图的方法、系统及计算机程序产品

Country Status (6)

Country Link
US (1) US20150310160A1 (enExample)
JP (1) JP6570010B2 (enExample)
KR (1) KR102330732B1 (enExample)
CN (1) CN106165065B (enExample)
TW (1) TWI640843B (enExample)
WO (1) WO2015153872A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10162928B2 (en) * 2015-12-02 2018-12-25 Taiwan Semiconductor Manufacturing Company, Ltd. Method of designing a semiconductor device, system for implementing the method and standard cell
US10296702B2 (en) 2017-03-15 2019-05-21 Applied Materials Israel Ltd. Method of performing metrology operations and system thereof
US10120973B2 (en) * 2017-03-15 2018-11-06 Applied Materials Israel Ltd. Method of performing metrology operations and system thereof
DE102017219217B4 (de) * 2017-10-26 2021-03-25 Carl Zeiss Smt Gmbh Masken für die Mikrolithographie, Verfahren zur Bestimmung von Kantenpositionen der Bilder der Strukturen einer derartigen Maske und System zur Durchführung eines derartigen Verfahrens
WO2022009392A1 (ja) * 2020-07-09 2022-01-13 株式会社日立ハイテク 欠陥検査装置、欠陥検査方法
CN114373000A (zh) * 2021-11-29 2022-04-19 湖南快乐阳光互动娱乐传媒有限公司 一种问题地图筛查方法和装置

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JP2006313353A (ja) * 2005-05-05 2006-11-16 Asml Masktools Bv 近傍の影響を考慮した光学的近接効果補正を実行する装置、方法およびコンピュータ・プログラム製品
JP2013045372A (ja) * 2011-08-25 2013-03-04 Dainippon Printing Co Ltd 画像評価方法、描画条件選択方法、画像評価プログラム、描画条件選択プログラム
CN103366375A (zh) * 2013-07-15 2013-10-23 中国科学院自动化研究所 基于动态有向图的图像集配准方法
CN106154768A (zh) * 2016-07-01 2016-11-23 无锡中微掩模电子有限公司 一种基于掩模板的集成电路基板二次曝光方法

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JP3730263B2 (ja) * 1992-05-27 2005-12-21 ケーエルエー・インストルメンツ・コーポレーション 荷電粒子ビームを用いた自動基板検査の装置及び方法
US6539106B1 (en) * 1999-01-08 2003-03-25 Applied Materials, Inc. Feature-based defect detection
JP3808817B2 (ja) * 2002-09-05 2006-08-16 株式会社東芝 マスク欠陥検査方法、半導体装置の製造方法、マスク欠陥検査装置、欠陥影響度マップ作成方法およびプログラム
US9002497B2 (en) * 2003-07-03 2015-04-07 Kla-Tencor Technologies Corp. Methods and systems for inspection of wafers and reticles using designer intent data
WO2006046236A1 (en) * 2004-10-26 2006-05-04 May High-Tech Solutions, Ltd. Method and apparatus for residue detection on a polished wafer
JP4203498B2 (ja) * 2005-09-22 2009-01-07 アドバンスド・マスク・インスペクション・テクノロジー株式会社 画像補正装置、パターン検査装置、画像補正方法、及び、パターン欠陥検査方法
US7676077B2 (en) * 2005-11-18 2010-03-09 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
KR100819803B1 (ko) * 2006-04-06 2008-04-07 삼성테크윈 주식회사 솔더 페이스트 검사 방법
US8624971B2 (en) * 2009-01-23 2014-01-07 Kla-Tencor Corporation TDI sensor modules with localized driving and signal processing circuitry for high speed inspection
US8825051B2 (en) * 2009-05-01 2014-09-02 Qualcomm Incorporated Idle handoff to hybrid femto cell based on system selection database
KR101195263B1 (ko) * 2010-04-13 2012-11-14 에스케이하이닉스 주식회사 포토마스크의 이미지 배치 에러 보정 방법
JP5860646B2 (ja) * 2011-09-16 2016-02-16 株式会社ニューフレアテクノロジー 位置ずれマップ作成装置、パターン検査システム、及び位置ずれマップ作成方法
US8855399B2 (en) * 2012-02-07 2014-10-07 Applied Materials Israel, Ltd. System, a method and a computer program product for CAD-based registration
US9599575B2 (en) * 2012-02-07 2017-03-21 Applied Materials Israel, Ltd. System, a method and a computer program product for CAD-based registration
TWI618050B (zh) * 2013-02-14 2018-03-11 杜比實驗室特許公司 用於音訊處理系統中之訊號去相關的方法及設備

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006313353A (ja) * 2005-05-05 2006-11-16 Asml Masktools Bv 近傍の影響を考慮した光学的近接効果補正を実行する装置、方法およびコンピュータ・プログラム製品
JP2013045372A (ja) * 2011-08-25 2013-03-04 Dainippon Printing Co Ltd 画像評価方法、描画条件選択方法、画像評価プログラム、描画条件選択プログラム
CN103366375A (zh) * 2013-07-15 2013-10-23 中国科学院自动化研究所 基于动态有向图的图像集配准方法
CN106154768A (zh) * 2016-07-01 2016-11-23 无锡中微掩模电子有限公司 一种基于掩模板的集成电路基板二次曝光方法

Also Published As

Publication number Publication date
JP6570010B2 (ja) 2019-09-04
US20150310160A1 (en) 2015-10-29
KR20160142354A (ko) 2016-12-12
WO2015153872A1 (en) 2015-10-08
CN106165065A (zh) 2016-11-23
TWI640843B (zh) 2018-11-11
JP2017516130A (ja) 2017-06-15
TW201543184A (zh) 2015-11-16
KR102330732B1 (ko) 2021-11-23

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