TWI640843B - 用於產生遮罩之高密度對位映圖的方法、系統及電腦程式產品 - Google Patents

用於產生遮罩之高密度對位映圖的方法、系統及電腦程式產品 Download PDF

Info

Publication number
TWI640843B
TWI640843B TW104111017A TW104111017A TWI640843B TW I640843 B TWI640843 B TW I640843B TW 104111017 A TW104111017 A TW 104111017A TW 104111017 A TW104111017 A TW 104111017A TW I640843 B TWI640843 B TW I640843B
Authority
TW
Taiwan
Prior art keywords
mask
points
alignment
data
tool
Prior art date
Application number
TW104111017A
Other languages
English (en)
Chinese (zh)
Other versions
TW201543184A (zh
Inventor
Frank Laske
法蘭克 雷斯基
Mohammed Daneshpanah
穆罕默德 丹尼斯帕納
Pradeep Subrahmanyan
布拉迪普 沙布拉曼雁
Yalin Xiong
熊亞霖
Original Assignee
Kla-Tencor Corporation
美商克萊譚克公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla-Tencor Corporation, 美商克萊譚克公司 filed Critical Kla-Tencor Corporation
Publication of TW201543184A publication Critical patent/TW201543184A/zh
Application granted granted Critical
Publication of TWI640843B publication Critical patent/TWI640843B/zh

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G06F30/398—Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • H10P74/23—
    • H10P76/00—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Evolutionary Computation (AREA)
  • Geometry (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Image Processing (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
TW104111017A 2014-04-02 2015-04-02 用於產生遮罩之高密度對位映圖的方法、系統及電腦程式產品 TWI640843B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201461974001P 2014-04-02 2014-04-02
US61/974,001 2014-04-02

Publications (2)

Publication Number Publication Date
TW201543184A TW201543184A (zh) 2015-11-16
TWI640843B true TWI640843B (zh) 2018-11-11

Family

ID=54241286

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104111017A TWI640843B (zh) 2014-04-02 2015-04-02 用於產生遮罩之高密度對位映圖的方法、系統及電腦程式產品

Country Status (6)

Country Link
US (1) US20150310160A1 (enExample)
JP (1) JP6570010B2 (enExample)
KR (1) KR102330732B1 (enExample)
CN (1) CN106165065B (enExample)
TW (1) TWI640843B (enExample)
WO (1) WO2015153872A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10162928B2 (en) * 2015-12-02 2018-12-25 Taiwan Semiconductor Manufacturing Company, Ltd. Method of designing a semiconductor device, system for implementing the method and standard cell
US10120973B2 (en) 2017-03-15 2018-11-06 Applied Materials Israel Ltd. Method of performing metrology operations and system thereof
US10296702B2 (en) 2017-03-15 2019-05-21 Applied Materials Israel Ltd. Method of performing metrology operations and system thereof
DE102017219217B4 (de) 2017-10-26 2021-03-25 Carl Zeiss Smt Gmbh Masken für die Mikrolithographie, Verfahren zur Bestimmung von Kantenpositionen der Bilder der Strukturen einer derartigen Maske und System zur Durchführung eines derartigen Verfahrens
WO2022009392A1 (ja) * 2020-07-09 2022-01-13 株式会社日立ハイテク 欠陥検査装置、欠陥検査方法
CN114373000A (zh) * 2021-11-29 2022-04-19 湖南快乐阳光互动娱乐传媒有限公司 一种问题地图筛查方法和装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070064995A1 (en) * 2005-09-22 2007-03-22 Junji Oaki Image density-adapted automatic mode switchable pattern correction scheme for workpiece inspection
US7676077B2 (en) * 2005-11-18 2010-03-09 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
TW201127119A (en) * 2009-05-01 2011-08-01 Qualcomm Inc Idle handoff to hybrid femto cell based on system selection database
TW201443877A (zh) * 2013-02-14 2014-11-16 Dolby Lab Licensing Corp 音訊處理系統中之訊號去相關

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3730263B2 (ja) * 1992-05-27 2005-12-21 ケーエルエー・インストルメンツ・コーポレーション 荷電粒子ビームを用いた自動基板検査の装置及び方法
US6539106B1 (en) * 1999-01-08 2003-03-25 Applied Materials, Inc. Feature-based defect detection
JP3808817B2 (ja) * 2002-09-05 2006-08-16 株式会社東芝 マスク欠陥検査方法、半導体装置の製造方法、マスク欠陥検査装置、欠陥影響度マップ作成方法およびプログラム
US9002497B2 (en) * 2003-07-03 2015-04-07 Kla-Tencor Technologies Corp. Methods and systems for inspection of wafers and reticles using designer intent data
US20090136117A1 (en) * 2004-10-26 2009-05-28 May High-Tech Solutions Ltd. Method and apparatus for residue detection on a polished wafer
US7349066B2 (en) * 2005-05-05 2008-03-25 Asml Masktools B.V. Apparatus, method and computer program product for performing a model based optical proximity correction factoring neighbor influence
KR100819803B1 (ko) * 2006-04-06 2008-04-07 삼성테크윈 주식회사 솔더 페이스트 검사 방법
US8624971B2 (en) 2009-01-23 2014-01-07 Kla-Tencor Corporation TDI sensor modules with localized driving and signal processing circuitry for high speed inspection
KR101195263B1 (ko) * 2010-04-13 2012-11-14 에스케이하이닉스 주식회사 포토마스크의 이미지 배치 에러 보정 방법
JP2013045372A (ja) * 2011-08-25 2013-03-04 Dainippon Printing Co Ltd 画像評価方法、描画条件選択方法、画像評価プログラム、描画条件選択プログラム
JP5860646B2 (ja) 2011-09-16 2016-02-16 株式会社ニューフレアテクノロジー 位置ずれマップ作成装置、パターン検査システム、及び位置ずれマップ作成方法
US8855399B2 (en) * 2012-02-07 2014-10-07 Applied Materials Israel, Ltd. System, a method and a computer program product for CAD-based registration
US9599575B2 (en) * 2012-02-07 2017-03-21 Applied Materials Israel, Ltd. System, a method and a computer program product for CAD-based registration
CN103366375B (zh) * 2013-07-15 2016-08-10 中国科学院自动化研究所 基于动态有向图的图像集配准方法
CN106154768B (zh) * 2016-07-01 2019-04-05 无锡中微掩模电子有限公司 一种基于掩模板的集成电路基板二次曝光方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070064995A1 (en) * 2005-09-22 2007-03-22 Junji Oaki Image density-adapted automatic mode switchable pattern correction scheme for workpiece inspection
US7676077B2 (en) * 2005-11-18 2010-03-09 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
TW201127119A (en) * 2009-05-01 2011-08-01 Qualcomm Inc Idle handoff to hybrid femto cell based on system selection database
TW201443877A (zh) * 2013-02-14 2014-11-16 Dolby Lab Licensing Corp 音訊處理系統中之訊號去相關

Also Published As

Publication number Publication date
TW201543184A (zh) 2015-11-16
WO2015153872A1 (en) 2015-10-08
KR102330732B1 (ko) 2021-11-23
CN106165065B (zh) 2019-08-30
CN106165065A (zh) 2016-11-23
JP2017516130A (ja) 2017-06-15
KR20160142354A (ko) 2016-12-12
US20150310160A1 (en) 2015-10-29
JP6570010B2 (ja) 2019-09-04

Similar Documents

Publication Publication Date Title
TWI640843B (zh) 用於產生遮罩之高密度對位映圖的方法、系統及電腦程式產品
TWI760437B (zh) 檢測一光微影倍縮光罩之方法及系統，以及電腦可讀媒體
US11120182B2 (en) Methodology of incorporating wafer physical measurement with digital simulation for improving semiconductor device fabrication
TWI484167B (zh) Inspection device and inspection method
US9097978B2 (en) Method and apparatus to characterize photolithography lens quality
US20150379707A1 (en) Mask inspection apparatus, mask evaluation method and mask evaluation system
KR20150036789A (ko) 웨이퍼 검사 방법 및/또는 웨이퍼 상에 형성되는 디바이스의 하나 이상의 특징을 예측하는 방법
TWI732657B (zh) 半導體晶圓檢測方法及其系統
KR20170070218A (ko) 자동화 패턴 충실도 측정 계획 생성
JP6472447B2 (ja) フォトマスク欠陥性における変化の監視
TW201636883A (zh) 使用內建目標之供設計之檢查之對準
TWI631637B (zh) 用於暗場檢測之基於背景之檢測
KR20170129892A (ko) 설계에 대한 검사의 서브-픽셀 정렬
US7865866B2 (en) Method of inspecting mask using aerial image inspection apparatus
JP6386732B2 (ja) 検出装置、検出方法、及びリソグラフィ装置
JP6492086B2 (ja) マスク上の構造体の位置を測定し、それによってマスク製造誤差を決定する方法
TW507308B (en) Correction of overlay offset between inspection layers in integrated circuits
CN116754580B (zh) 半导体样品制造的掩模检查
US9366637B2 (en) Method for establishing distortion properties of an optical system in a microlithographic measurement system
CN101614953A (zh) 用于评估具有重复图形的目标物体的方法和系统
JP4243268B2 (ja) パターン検査装置、及びパターン検査方法
KR100769148B1 (ko) 패턴크기 모니터링을 동시에 수행하기 위한 오버레이 마크 및 그 이용방법
Tamamushi et al. In-die mask registration measurement with existing inspection tools
JP2010256043A (ja) 欠陥検出感度評価用パターンの欠陥サイズ算出方法及び感度表作成方法