CN106098607A - 背面保护薄膜、薄膜、半导体装置的制造方法和保护芯片的制造方法 - Google Patents
背面保护薄膜、薄膜、半导体装置的制造方法和保护芯片的制造方法 Download PDFInfo
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- CN106098607A CN106098607A CN201610274684.3A CN201610274684A CN106098607A CN 106098607 A CN106098607 A CN 106098607A CN 201610274684 A CN201610274684 A CN 201610274684A CN 106098607 A CN106098607 A CN 106098607A
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- thin film
- protective thin
- semiconductor wafer
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Classifications
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- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
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Abstract
一种背面保护薄膜、薄膜、半导体装置的制造方法和保护芯片的制造方法。第一本发明的目的在于,提供在将背面保护薄膜与半导体晶片进行粘贴后能够检测半导体晶片的缺口且能够防止背面保护薄膜露出的背面保护薄膜等。第二本发明的目的在于,提供将背面保护薄膜与半导体晶片进行粘贴后能够检测半导体晶片的缺口的背面保护薄膜等。第一本发明涉及用于粘贴在半导体晶片背面的背面保护薄膜等。背面保护薄膜的外周小于半导体晶片的外周,背面保护薄膜上设置有缺口。第二本发明涉及波长555nm的总透光率为3%以上的背面保护薄膜等。
Description
技术领域
本发明涉及背面保护薄膜、薄膜、半导体装置的制造方法和保护芯片的制造方法。
背景技术
近年来,广泛利用在基板上通过倒装芯片接合而安装有半导体芯片等半导体元件的倒装芯片型半导体装置。倒装芯片型的半导体装置中,为了防止半导体元件的损伤等,有时在半导体元件的背面设置背面保护薄膜。通常,为了能够目视识别用激光印刷的标识(以下称为“激光标识”),背面保护薄膜进行了着色(例如参照专利文献1)。
现有技术文献
专利文献
专利文献1:日本特许4762959号公报
发明内容
发明要解决的问题
由于背面保护薄膜进行了着色,因此将背面保护薄膜与半导体晶片进行粘贴后难以检测半导体晶片的缺口。另外,通过将背面保护薄膜与半导体晶片进行粘贴,有时发生背面保护薄膜的露出。
第一本发明的目的在于,提供在将背面保护薄膜与半导体晶片进行粘贴后能够检测半导体晶片的缺口且能够防止背面保护薄膜露出的背面保护薄膜和薄膜。第一本发明的目的在于,提供在将背面保护薄膜与半导体晶片进行粘贴后能够检测半导体晶片的缺口且能够防止背面保护薄膜露出的半导体装置的制造方法和保护芯片的制造方法。
第二本发明的目的在于,提供在将背面保护薄膜与半导体晶片进行粘贴后能够检测半导体晶片的缺口的背面保护薄膜和薄膜。第二本发明的目的在于,提供在将背面保护薄膜与半导体晶片进行粘贴后能够检测半导体晶片的缺口的半导体装置的制造方法和保护芯片的制造方法。
用于解决问题的方案
第一本发明涉及用于粘贴在半导体晶片背面的背面保护薄膜。背面保护薄膜的外周小于半导体晶片的外周,背面保护薄膜上设置有缺口。通过使背面保护薄膜的外周小于半导体晶片的外周,能够防止背面保护薄膜的露出。由于背面保护薄膜上设置有缺口,因此在将背面保护薄膜与半导体晶片进行粘贴后能够检测半导体晶片的缺口。
第一本发明还涉及薄膜,其包括:隔离膜和配置在隔离膜上的背面保护薄膜。薄膜优选呈现卷状。
第一本发明还涉及半导体装置的制造方法,其包括将半导体晶片和背面保护薄膜进行粘贴的工序。将半导体晶片和背面保护薄膜进行粘贴的工序优选为通过将半导体晶片和背面保护薄膜进行粘贴而形成层叠板的工序。层叠板包括半导体晶片和与半导体晶片的背面接触的背面保护薄膜。
将背面保护薄膜配置于面前并从垂直于半导体晶片的方向观察层叠板时,有时背面保护薄膜的缺口呈现与设置于半导体晶片的缺口的一部分轮廓重合的轮廓。将背面保护薄膜配置于面前并从垂直于半导体晶片的方向观察层叠板时,有时设置于半导体晶片的缺口的轮廓与背面保护薄膜的缺口的轮廓相比位于半导体晶片的半径方向的外侧。
第一本发明还涉及保护芯片的制造方法,其包括将半导体晶片和背面保护薄膜进行粘贴的工序。保护芯片包括半导体元件和配置在半导体元件的背面上的保护膜。
本发明人发现:通过提高背面保护薄膜的波长555nm的总透光率,在将背面保护薄膜与半导体晶片进行粘贴后能够检测半导体晶片的缺口,从而完成了第二本发明。
第二本发明涉及用于粘贴在半导体晶片背面的背面保护薄膜。背面保护薄膜的波长555nm的总透光率为3%以上。通过为3%以上,将背面保护薄膜与半导体晶片进行粘贴后能够检测半导体晶片的缺口。
第二本发明还涉及薄膜,其包括:隔离膜和配置在隔离膜上的背面保护薄膜。
第二本发明还涉及半导体装置的制造方法,其包括将半导体晶片和背面保护薄膜进行粘贴的工序。
第二本发明还涉及保护芯片的制造方法,其包括将半导体晶片和背面保护薄膜进行粘贴的工序。保护芯片包括半导体元件和配置在半导体元件背面上的保护膜。
附图说明
图1是实施方式1中的薄膜的概略俯视图。
图2是薄膜的一部分的概略截面图。
图3是背面保护薄膜的概略俯视图。
图4是半导体晶片的概略俯视图。
图5是层叠板的概略俯视图。
图6是半导体装置的制造工序的概略截面图。
图7是半导体装置的制造工序的概略截面图。
图8是半导体装置的制造工序的概略截面图。
图9是变形例1中的层叠板的概略俯视图。
图10是变形例2中的背面保护薄膜的概略俯视图。
图11是变形例3中的背面保护薄膜的概略俯视图。
图12是实施方式2中的薄膜的概略俯视图。
图13是薄膜的一部分的概略截面图。
图14是背面保护薄膜的概略俯视图。
图15是层叠板的概略俯视图。
图16是半导体装置的制造工序的概略截面图。
图17是半导体装置的制造工序的概略截面图。
图18是半导体装置的制造工序的概略截面图。
附图标记说明
1 薄膜
12 隔离膜
13 隔离膜
111 背面保护薄膜
101 缺口
4 半导体晶片
41 缺口
7 层叠板
17 切割带
171 基材
172 粘合剂层
8 吸附基座
41 半导体元件
5 保护芯片
6 被粘物
51 凸块
61 导电材料
9 薄膜
911 背面保护薄膜
2 层叠板
3 保护芯片
具体实施方式
以下列举出实施方式来详细说明本发明,但本发明不仅限定于这些实施方式。
[实施方式1]
(半导体装置的制造方法/保护芯片5的制造方法)
如图1和图2所示那样,薄膜1呈现卷状。薄膜1包括隔离膜12和配置在隔离膜12上的背面保护薄膜111a、111b、111c、……、111m(以下统称为“背面保护薄膜111”。)。薄膜1还包括配置在背面保护薄膜111上的隔离膜13。背面保护薄膜111可以用其与隔离膜12接触的第1面和位于第1面对侧的第2面来定义两个表面。第2面与隔离膜13接触。
背面保护薄膜111a与背面保护薄膜111b之间的距离、背面保护薄膜111b与背面保护薄膜111c之间的距离、……背面保护薄膜111l与背面保护薄膜111m之间的距离是一定的。隔离膜13可以用其与卷芯接触的第1端和与第1端成对的第2端来定义两端。缺口101a、101b、101c、……、101m(以下统称为“缺口101”。)位于连结第1端与第2端的方向上的靠近第1端的一侧。通过位于靠近第1端的一侧,可容易地粘贴背面保护薄膜111和半导体晶片4。
如图3所示那样,背面保护薄膜111呈现设置有缺口101的圆盘状。
设置于背面保护薄膜111的缺口101的形状与缺口41的一部分形状相同。由于背面保护薄膜111上设置有缺口101,在将背面保护薄膜111与半导体晶片4进行粘贴后能够检测半导体晶片4的缺口41。
背面保护薄膜111的外周小于半导体晶片4的外周。由于背面保护薄膜111的外周小,因此能够防止背面保护薄膜111的露出。
如图4所示那样,半导体晶片4上设置有缺口41。半导体晶片4可以用电路面和位于电路面对侧的背面(也称为非电路面、非电极形成面等)来定义两个表面。作为半导体晶片4,可适合地使用硅晶片。
如图5所示那样,通过将背面保护薄膜111和半导体晶片4进行粘贴,从而形成层叠板7。具体而言,通过剥掉隔离膜13并将背面保护薄膜111和半导体晶片4进行粘贴,从而形成层叠板7。
层叠板7包括半导体晶片4以及与半导体晶片4的背面接触的背面保护薄膜111。将背面保护薄膜111配置于面前并从垂直于半导体晶片4的方向观察层叠板7时,背面保护薄膜111的缺口101呈现与半导体晶片4的缺口41的一部分轮廓重合的轮廓。
根据需要通过加热层叠板7而使背面保护薄膜111固化。加热温度可适当设定。
通过用于检测缺口41的检测传感器来检测与背面保护薄膜111接触的半导体晶片4的缺口41。由此能够获得设置于半导体晶片4的缺口41的位置信息,能够确认背面保护薄膜111中的接触激光的区域。作为检测传感器,可列举出显微镜等。
根据需要,用激光对层叠板7的背面保护薄膜111进行印刷。需要说明的是,激光印刷时,可以利用公知的激光标记装置。另外,作为激光,可以利用气体激光、固体激光、液体激光等。具体而言,作为气体激光,没有特别限定,可以利用公知的气体激光,适合为二氧化碳激光(CO2激光)、准分子激光(ArF激光、KrF激光、XeCl激光、XeF激光等)。另外,作为固体激光,没有特别限定,可以利用公知的固体激光,适合为YAG激光(Nd:YAG激光等)、YVO4激光。
通过用于检测缺口41的检测传感器来检测与背面保护薄膜111接触的半导体晶片4的缺口41。由此能够获得设置于半导体晶片4的缺口41的位置信息,能够将切割带17的位置与半导体晶片4的位置进行对准。
如图6所示那样,将层叠板7与切割带17进行粘贴。切割带17包括基材171和配置在基材171上的粘合剂层172。粘合剂层172优选具有利用辐射线而进行固化的性质。作为辐射线,优选为紫外线。
如图7所示那样,进行半导体晶片4的切割。由此形成保护芯片5。保护芯片5包括半导体元件41和配置在半导体元件41的背面上的保护膜112。半导体元件41可以用电路面(也称为表面、电路图案形成面、电极形成面等)和位于电路面对侧的背面来定义两个表面。在使切割带17真空吸附于吸附基座8的状态下,例如按照常规方法从半导体晶片4的电路面侧进行切割。可以采用被称为全切的切断方式等。作为本工序中使用的切割装置,没有特别限定,可以使用现有公知的装置。半导体元件41优选为倒装芯片。
接着,将保护芯片5从粘合剂层172剥离。即,拾取保护芯片5。作为拾取方法,没有特别限定,可以采用现有公知的各种方法。例如可列举出:用针形件将保护芯片5顶起,利用拾取装置拾取被顶起的保护芯片5的方法等。
如图8所示那样,通过倒装芯片接合方式(倒装芯片安装方式),将保护芯片5固定于被粘物6。具体而言,在半导体元件41的电路面与被粘物6相对的形态下,将保护芯片5固定于被粘物6。例如,通过使设置在半导体元件41的电路面上的凸块51与覆盖于被粘物6的连接垫的接合用导电材料(焊料等)61相接触,并且一边按押一边使导电材料61熔融,从而能够确保半导体元件41与被粘物6的电导通、将保护芯片5固定于被粘物6(倒装芯片接合工序)。此时,保护芯片5与被粘物6之间形成有空隙,其空隙间距离通常为30μm~300μm左右。需要说明的是,可以将保护芯片5倒装芯片接合(倒装芯片连接)在被粘物6上,然后对保护芯片5与被粘物6的对侧面、间隙进行清洗,向间隙中填充密封材料(密封树脂等),从而进行密封。
作为被粘物6,可以使用引线框、电路基板(布线电路基板等)等基板。作为这种基板的材质,没有特别限定,可列举出陶瓷基板、塑料基板。作为塑料基板,例如可列举出环氧基板、双马来酰亚胺三嗪基板、聚酰亚胺基板等。
作为凸块、导电材料的材质,没有特别限定,例如可列举出锡-铅系金属材料、锡-银系金属材料、锡-银-铜系金属材料、锡-锌系金属材料、锡-锌-铋系金属材料等焊料类(合金);金系金属材料、铜系金属材料等。
需要说明的是,导电材料61熔融时的温度通常为260℃左右(例如为250℃~300℃)。背面保护薄膜111因包含环氧树脂而能够耐受所述温度。
该工序中,优选进行保护芯片5与被粘物6的对侧面(电极形成面)、间隙的清洗。作为清洗所用的清洗液,没有特别限定,例如可列举出有机系的清洗液、水系的清洗液。
接着,进行密封工序,其用于密封进行了倒装芯片接合的保护芯片5与被粘物6之间的间隙。密封工序使用密封树脂来进行。作为此时的密封条件,没有特别限定,通常通过以175℃进行60秒钟~90秒钟的加热来进行密封树脂的热固化,但本发明不限定于此,例如可以以165℃~185℃固化(cure)数分钟。另外,通过该工序,能够使保护膜112完全或大致完全地进行热固化。进而,保护膜112即使为未固化状态,在该密封工序时也能够与密封材料一同热固化,因此,无需重新追加用于使保护膜112热固化的工序。
作为密封树脂,只要是具有绝缘性的树脂(绝缘树脂)就没有特别限定。作为密封树脂,更优选为具有弹性的绝缘树脂。作为密封树脂,例如可列举出包含环氧树脂的树脂组合物等。另外,作为由包含环氧树脂的树脂组合物得到的密封树脂,作为树脂成分,除了环氧树脂之外,还可以包含环氧树脂以外的热固性树脂(酚醛树脂等)、热塑性树脂等。需要说明的是,作为酚醛树脂,也可以用作环氧树脂的固化剂。密封树脂的形状为薄膜状、平板状等。
通过如上方法而得到的半导体装置(倒装芯片安装的半导体装置)包括被粘物6和固定于被粘物6的保护芯片5。能够利用激光对所述半导体装置的保护膜112进行印刷。
以倒装芯片安装方式进行安装而得到的半导体装置与以芯片接合安装方式进行安装而得到的半导体装置相比薄且小。因此,可适合地用作各种电子设备/电子部件或它们的材料/构件。具体而言,作为利用倒装芯片安装半导体装置的电子设备,可列举出所谓的“手机”、“PHS(personal handyphonesystem,个人手持机系统)”、小型计算机(例如所谓的“PDA”(便携信息终端)、所谓“笔记本电脑”、所谓“NETBOOK(商标)”、所谓的“可穿戴电脑”等)、“手机”与计算机一体化而成的小型电子设备、所谓的“Digital Camera(商标)”、所谓的“数字式摄像机”、小型电视、小型游戏机、小型数字式音频播放器、所谓的“电子记事本”、所谓的“电子词典”、所谓的“电子书”用电子设备终端、小型数字式钟表等移动型电子设备(可携带的电子设备)等,当然,还可以是移动型以外(设置型等)的电子设备(例如所谓的“台式计算机”、薄型电视、录像/播放用电子设备(硬盘记录器、DVD播放器等)、投影仪、微型机械等)等。另外,作为电子部件或者电子设备/电子部件的材料/构件,例如可列举出所谓的“CPU”的构件、各种存储装置(所谓的“存储器”、硬盘等)的构件等。
如上所述,半导体装置的制造方法包括将半导体晶片4与背面保护薄膜111进行粘贴的工序。半导体装置的制造方法还包括:在将半导体晶片4与背面保护薄膜111进行粘贴的工序之后,用激光对背面保护薄膜111进行印刷的工序。用激光对背面保护薄膜111进行印刷的工序包括检测半导体晶片4的缺口41的步骤。半导体装置的制造方法还包括将层叠板7与切割带17进行粘贴的工序,所述层叠板7是通过将半导体晶片4与背面保护薄膜111进行粘贴的工序而形成的。将层叠板7与切割带17进行粘贴的工序包括检测半导体晶片4的缺口41的步骤。
还包括在将层叠板7与切割带17进行粘贴的工序之后,通过切割而形成保护芯片5的工序。半导体装置的制造方法还包括将保护芯片5固定于被粘物6的工序。将保护芯片5固定于被粘物6的工序优选为通过倒装芯片连接将保护芯片5固定于被粘物6的工序。
(背面保护薄膜111)
背面保护薄膜111优选为有色。通过使背面保护薄膜111为有色,可容易地对激光标识进行目视识别。背面保护薄膜111例如优选为黑色、蓝色、红色等深色。特别优选为黑色。
深色是指基本上L*a*b*色度体系所规定的L*达到60以下(0~60)[优选为50以下(0~50)、进一步优选为40以下(0~40)]的深色。
另外,黑色是指基本上L*a*b*色度体系所规定的L*达到35以下(0~35)[优选为30以下(0~30)、进一步优选为25以下(0~25)]的黑色系颜色。需要说明的是,对于黑色而言,L*a*b*色度体系所规定的a*、b*可分别根据L*值来适当选择。作为a*、b*,例如两者均优选为-10~10、更优选为-5~5、特别适合为-3~3的范围(尤其是为0或大致为0)。
需要说明的是,L*a*b*色度体系所规定的L*、a*、b*可通过使用色彩色差计(商品名“CR-200”、KONICA MINOLTA,INC.制造;色彩色差计)进行测定来求出。需要说明的是,L*a*b*色度体系是国际照明委员会(CIE)于1976年推荐的颜色空间,是指被称为CIE1976(L*a*b*)色度体系的颜色空间。另外,L*a*b*色度体系在日本工业标准中由JIS Z 8729进行规定。
背面保护薄膜111通常为未固化状态。未固化状态包括半固化状态。背面保护薄膜111优选为半固化状态。
在85℃和85%RH的气氛下放置了168小时时的背面保护薄膜111的吸湿率优选为1重量%以下、更优选为0.8重量%以下。通过为1重量%以下,能够提高激光标记性。吸湿率可通过无机填充剂的含量等来控制。
背面保护薄膜111的吸湿率的测定方法如下所示。即,将背面保护薄膜111在85℃、85%RH的恒温恒湿槽中放置168小时,由放置前后的减重率(weight-loss ratio)求出吸湿率。
将通过使背面保护薄膜111固化而得到的固化物在85℃和85%RH的气氛下放置了168小时时的吸湿率优选为1重量%以下、更优选为0.8重量%以下。通过为1重量%以下,能够提高激光标记性。吸湿率可通过无机填充剂的含量等来控制。
固化物的吸湿率的测定方法如下所示。即,将固化物在85℃、85%RH的恒温恒湿槽中放置168小时,由放置前后的减重率求出吸湿率。
背面保护薄膜111中的乙醇提取的凝胶率优选为50%以上、更优选为70%以上、更进一步优选为90%以上。为50%以上时,能够防止其粘附于半导体制造工艺中的夹具等。
需要说明的是,背面保护薄膜111的凝胶率可通过树脂成分的种类、其含量、交联剂的种类、其含量、以及加热温度、加热时间等来控制。
背面保护薄膜111的未固化状态下的23℃下的拉伸储能模量优选为0.5GPa以上、更优选为0.75GPa以上、进一步优选为1GPa以上。为1GPa以上时,能够防止背面保护薄膜111附着于载带。23℃下的拉伸储能模量的上限例如为50GPa。23℃下的拉伸储能模量可通过树脂成分的种类、其含量、填充材料的种类、其含量等来控制。
背面保护薄膜111可以是导电性,也可以是非导电性。
背面保护薄膜111对于半导体晶片4的粘接力(23℃、剥离角度为180°、剥离速度为300mm/分钟)优选为1N/10mm宽度以上、更优选为2N/10mm宽度以上、进一步优选为4N/10mm宽度以上。另一方面,所述粘接力优选为10N/10mm宽度以下。通过为1N/10mm宽度以上,背面保护薄膜111以优异的密合性粘贴于半导体晶片4、半导体元件,能够防止浮起等的发生。另外,在切割半导体晶片4时还能够防止芯片飞散的发生。需要说明的是,背面保护薄膜111对于半导体晶片4的粘接力例如是如下操作而测定的值。即,在背面保护薄膜111的一个面上粘贴粘合带(商品名“BT315”、日东电工株式会社制造)而对背面进行增强。其后,用50℃且2kg的辊往复一次而利用热层压法将厚度0.6mm的半导体晶片4粘贴在进行了背面增强的长度150mm、宽度10mm的背面保护薄膜111的表面(正面)。其后,在热板上(50℃)静置2分钟后,在常温(23℃左右)下静置20分钟。静置后,使用剥离试验机(商品名“AUTOGRAPH AGS-J”、岛津制作所社制造),在23℃的温度下,在剥离角度:180°、拉伸速度:300mm/分钟的条件下,剥掉进行了背面增强的背面保护薄膜111。背面保护薄膜111对于半导体晶片4的粘接力是此时在背面保护薄膜111与半导体晶片4的界面进行剥离而测定的值(N/10mm宽度)。
背面保护薄膜111的厚度优选为2μm以上、更优选为4μm以上、进一步优选为6μm以上、特别优选为10μm以上。另一方面,背面保护薄膜111的厚度优选为200μm以下、更优选为160μm以下、进一步优选为100μm以下、更进一步优选为80μm以下、特别优选为50μm以下。
背面保护薄膜111优选包含着色剂。作为着色剂,例如可列举出染料、颜料。其中优选为染料。
作为染料,优选为深色系染料。作为深色系染料,例如可列举出黑色染料、蓝色染料、红色染料等。其中,优选为黑色染料。色料可以单独使用或者组合使用2种以上。
背面保护薄膜111中的着色剂的含量优选为0.5重量%以上、更优选为1重量%以上、进一步优选为2重量%以上。背面保护薄膜111中的着色剂的含量优选为10重量%以下、更优选为8重量%以下、进一步优选为5重量%以下。
背面保护薄膜111可以包含热塑性树脂。
作为热塑性树脂,例如可列举出天然橡胶、丁基橡胶、异戊橡胶、氯丁橡胶、乙烯-醋酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯树脂、聚碳酸酯树脂、热塑性聚酰亚胺树脂、6-尼龙和/或6,6-尼龙等聚酰胺树脂、苯氧基树脂、丙烯酸类树脂、PET(聚对苯二甲酸乙二醇酯)和/或PBT(聚对苯二甲酸丁二醇酯)等饱和聚酯树脂、聚酰胺酰亚胺树脂或氟树脂等。热塑性树脂可以单独使用或者组合使用2种以上。其中,适合为丙烯酸类树脂、苯氧基树脂。
作为丙烯酸类树脂,没有特别限定,可列举出以具有碳数为30以下(碳数优选为4~18、碳数进一步优选为6~10、碳数特别优选为8或9)的直链或支链烷基的丙烯酸或甲基丙烯酸的酯中的1种或2种以上作为成分的聚合物等。即,本发明中,丙烯酸类树脂是指还包括甲基丙烯酸类树脂的广义概念。作为烷基,例如可列举出甲基、乙基、丙基、异丙基、正丁基、叔丁基、异丁基、戊基、异戊基、己基、庚基、2-乙基己基、辛基、异辛基、壬基、异壬基、癸基、异癸基、十一烷基、十二烷基(月桂基)、十三烷基、十四烷基、硬脂基、十八烷基等。
另外,作为用于形成丙烯酸类树脂的其它单体(烷基的碳数为30以下的丙烯酸或甲基丙烯酸的烷基酯以外的单体),没有特别限定,例如可列举出丙烯酸、甲基丙烯酸、丙烯酸羧基乙酯、丙烯酸羧基戊酯、衣康酸、马来酸、富马酸或巴豆酸等各种含羧基单体;马来酸酐或衣康酸酐等各种酸酐单体;(甲基)丙烯酸2-羟基乙酯、(甲基)丙烯酸2-羟基丙酯、(甲基)丙烯酸4-羟基丁酯、(甲基)丙烯酸6-羟基己酯、(甲基)丙烯酸8-羟基辛酯、(甲基)丙烯酸10-羟基癸酯、(甲基)丙烯酸12-羟基月桂酯或(4-羟基甲基环己基)-甲基丙烯酸酯等各种含羟基单体;苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯酰胺-2-甲基丙磺酸、(甲基)丙烯酰胺丙磺酸、(甲基)丙烯酸磺基丙酯或(甲基)丙烯酰氧基萘磺酸等各种含磺酸基单体;或者2-羟基乙基丙烯酰基磷酸酯等各种含磷酸基单体等。需要说明的是,(甲基)丙烯酸是指丙烯酸和/或甲基丙烯酸,本发明的(甲基)均为相同的意义。
背面保护薄膜111中的热塑性树脂的含量优选为10重量%以上、更优选为30重量%以上。背面保护薄膜111中的热塑性树脂的含量优选为90重量%以下、更优选为70重量%以下。
背面保护薄膜111可以包含热固性树脂。
作为热固性树脂,可列举出环氧树脂、酚醛树脂、氨基树脂、不饱和聚酯树脂、聚氨酯树脂、有机硅树脂、热固性聚酰亚胺树脂等。热固性树脂可以单独使用或者组合使用2种以上。作为热固性树脂,特别适合为会腐蚀半导体元件的离子性杂质等的含量少的环氧树脂。另外,作为环氧树脂的固化剂,可适合地使用酚醛树脂。
作为环氧树脂,没有特别限定,例如可以使用双酚A型环氧树脂、双酚F型环氧树脂、双酚S型环氧树脂、溴化双酚A型环氧树脂、氢化双酚A型环氧树脂、双酚AF型环氧树脂、联苯型环氧树脂、萘型环氧树脂、芴型环氧树脂、苯酚酚醛清漆型环氧树脂、邻甲酚酚醛清漆型环氧树脂、三羟基苯基甲烷型环氧树脂、四羟基苯基乙烷型环氧树脂等二官能环氧树脂、多官能环氧树脂或乙内酰脲型环氧树脂、三缩水甘油基异氰脲酸酯型环氧树脂或缩水甘油胺型环氧树脂等环氧树脂。
其中,特别优选为酚醛清漆型环氧树脂、联苯型环氧树脂、三羟基苯基甲烷型环氧树脂、四羟基苯基乙烷型环氧树脂。这是因为,这些环氧树脂与作为固化剂的酚醛树脂富有反应性、耐热性等优异。
进而,酚醛树脂作为环氧树脂的固化剂而起作用,例如可列举出苯酚酚醛清漆树脂、苯酚芳烷基树脂、甲酚酚醛清漆树脂、叔丁基苯酚酚醛清漆树脂、壬基苯酚酚醛清漆树脂等酚醛清漆型酚醛树脂、甲阶型酚醛树脂、聚对羟基苯乙烯等聚氧苯乙烯等。酚醛树脂可以单独使用或者组合使用2种以上。这些酚醛树脂之中,特别优选为苯酚酚醛清漆树脂、苯酚芳烷基树脂。这是因为能够提高半导体装置的连接可靠性。
关于环氧树脂与酚醛树脂的配混比例,例如适合的是,以酚醛树脂中的羟基相对于环氧树脂中的环氧基1当量达到0.5当量~2.0当量的方式进行配混。更适合为0.8当量~1.2当量。
背面保护薄膜111中的热固性树脂的含量优选为2重量%以上、更优选为5重量%以上。背面保护薄膜111中的热固性树脂的含量优选为40重量%以下、更优选为20重量%以下。
背面保护薄膜111可以包含环氧树脂和酚醛树脂的热固化促进催化剂。作为热固化促进催化剂,没有特别限定,可以从公知的热固化促进催化剂中适当选择并使用。热固化促进催化剂可以单独使用或者组合使用2种以上。作为热固化促进催化剂,例如可以使用胺系固化促进剂、磷系固化促进剂、咪唑系固化促进剂、硼系固化促进剂、磷-硼系固化促进剂等。
为了使背面保护薄膜111预先进行某种程度的交联,优选的是,在制作时,作为交联剂而预先添加与聚合物的分子链末端的官能团等发生反应的多官能性化合物。由此能够提高高温下的粘接特性并实现耐热性的改善。
作为交联剂,没有特别限定,可以使用公知的交联剂。具体而言,例如可列举出异氰酸酯系交联剂、环氧系交联剂、三聚氰胺系交联剂、过氧化物系交联剂、脲系交联剂、金属醇盐系交联剂、金属螯合物系交联剂、金属盐系交联剂、碳二亚胺系交联剂、噁唑啉系交联剂、氮丙啶系交联剂、胺系交联剂等。作为交联剂,适合为异氰酸酯系交联剂、环氧系交联剂。另外,交联剂可以单独使用或者组合使用2种以上。
作为异氰酸酯系交联剂,例如可列举出1,2-亚乙基二异氰酸酯、1,4-亚丁基二异氰酸酯、1,6-六亚甲基二异氰酸酯等低级脂肪族多异氰酸酯类;环亚戊基二异氰酸酯、环亚己基二异氰酸酯、异佛尔酮二异氰酸酯、氢化甲苯二异氰酸酯、氢化二甲苯二异氰酸酯等脂环族多异氰酸酯类;2,4-甲苯二异氰酸酯、2,6-甲苯二异氰酸酯、4,4’-二苯基甲烷二异氰酸酯、苯二亚甲基二异氰酸酯等芳香族多异氰酸酯类等,除此之外,还可以使用三羟甲基丙烷/甲苯二异氰酸酯三聚体加成物[Nippon Polyurethane Industry Co.,Ltd.制造、商品名“CORONATE L”]、三羟甲基丙烷/六亚甲基二异氰酸酯三聚体加成物[Nippon Polyurethane Industry Co.,Ltd.制造、商品名“CORONATE HL”]等。另外,作为环氧系交联剂,例如可列举出N,N,N’,N’-四缩水甘油基间苯二胺、二缩水甘油基苯胺、1,3-双(N,N-缩水甘油基氨基甲基)环己烷、1,6-己二醇二缩水甘油醚、新戊二醇二缩水甘油醚、乙二醇二缩水甘油醚、丙二醇二缩水甘油醚、聚乙二醇二缩水甘油醚、聚丙二醇二缩水甘油醚、山梨糖醇多缩水甘油醚、甘油多缩水甘油醚、季戊四醇多缩水甘油醚、聚甘油多缩水甘油醚、脱水山梨糖醇多缩水甘油醚、三羟甲基丙烷多缩水甘油醚、己二酸二缩水甘油酯、邻苯二甲酸二缩水甘油酯、三缩水甘油基三(2-羟基乙基)异氰脲酸酯、间苯二酚二缩水甘油醚、双酚-S-二缩水甘油醚、以及分子内具有2个以上环氧基的环氧系树脂等。
需要说明的是,本发明中,还可以照射电子射线、紫外线等来代替使用交联剂,或者与在使用交联剂的同时照射电子射线、紫外线等,由此实施交联处理。
背面保护薄膜111可以包含填充剂。通过包含填充剂,能够实现背面保护薄膜111的弹性模量的调节等。
作为填充剂,可以是无机填充剂、有机填充剂中的任一种,适合为无机填充剂。作为无机填充剂,例如可列举出二氧化硅、粘土、石膏、碳酸钙、硫酸钡、氧化铝、氧化铍、碳化硅、氮化硅等陶瓷类;铝、铜、银、金、镍、铬、铅、锡、锌、钯、焊料等金属;或者合金类、其它包含碳等的各种无机粉末等。填充剂可以单独使用或者组合使用2种以上。作为填充剂,其中适合为二氧化硅、特别适合为熔融二氧化硅。需要说明的是,无机填充剂的平均粒径优选在0.1μm~80μm的范围内。无机填充剂的平均粒径例如可通过激光衍射型粒度分布测定装置来测定。
背面保护薄膜111中的填充剂的含量优选为10重量%以上、更优选为20重量%以上。背面保护薄膜111中的填充剂的含量优选为70重量%以下、更优选为50重量%以下。
背面保护薄膜111可以适当包含其它添加剂。作为其它添加剂,例如可列举出阻燃剂、硅烷偶联剂、离子捕获剂、增量剂、防老剂、抗氧化剂、表面活性剂等。
作为阻燃剂,例如可列举出三氧化锑、五氧化锑、溴化环氧树脂等。阻燃剂可以单独使用或者组合使用2种以上。作为硅烷偶联剂,例如可列举出β-(3,4-环氧环己基)乙基三甲氧基硅烷、γ-环氧丙氧基丙基三甲氧基硅烷、γ-环氧丙氧基丙基甲基二乙氧基硅烷等。硅烷偶联剂可以单独使用或者组合使用2种以上。作为离子捕获剂,例如可列举出水滑石类、氢氧化铋等。离子捕获剂可以单独使用或者组合使用2种以上。
通过将热固性树脂、热塑性树脂和溶剂等混合而制备混合液,将混合液涂布在剥离纸上并干燥的方法等,能够获得背面保护薄膜111。
(隔离膜12)
作为隔离膜12,可列举出聚对苯二甲酸乙二醇酯(PET)薄膜等。隔离膜12优选实施了脱模处理。隔离膜12的厚度可适当设定。
(隔离膜13)
作为隔离膜13,可列举出聚对苯二甲酸乙二醇酯(PET)薄膜等。隔离膜13优选实施了脱模处理。隔离膜13的厚度可适当设定。
(变形例1)
如图9所示那样,将背面保护薄膜111配置于面前并从垂直于半导体晶片4的方向观察层叠板7时,层叠板7呈现特定的形状。即,半导体晶片4的缺口41的轮廓与背面保护薄膜111的缺口101的轮廓相比位于半导体晶片4的半径方向的外侧。
(变形例2)
如图10所示那样,缺口101为V字状。
(变形例3)
如图11所示那样,缺口101为矩形状。
(变形例4)
缺口101与缺口41相似。缺口101大于缺口41。
(变形例5)
缺口101的形状与缺口41的形状相同。
(变形例6)
背面保护薄膜111呈现包括第1层和配置在第1层上的第2层的多层形状。
(其它变形例)
变形例1~变形例6等可任意地组合。
[实施方式2]
以下说明实施方式2。基本上省略与实施方式1中说明的构件相同的构件的说明。
(半导体装置的制造方法)
如图12和图13所示那样,薄膜9呈现卷状。薄膜9包括隔离膜12和配置在隔离膜12上的背面保护薄膜911a、911b、911c、……、911m(以下统称为“背面保护薄膜911”。)。薄膜9还包括配置在背面保护薄膜911上的隔离膜13。背面保护薄膜911可以用其与隔离膜12接触的第1面和位于第1面对侧的第2面来定义两个表面。第2面与隔离膜13接触。
背面保护薄膜911a与背面保护薄膜911b之间的距离、背面保护薄膜911b与背面保护薄膜911c之间的距离、……背面保护薄膜911l与背面保护薄膜911m之间的距离是一定的。
如图14所示那样,背面保护薄膜911呈现圆盘状。
背面保护薄膜911的外周小于半导体晶片4的外周。由于背面保护薄膜911的外周小,因此能够防止背面保护薄膜911的露出。
如图15所示那样,通过将背面保护薄膜911与半导体晶片4进行粘贴,从而形成层叠板2。具体而言,剥掉隔离膜13并将背面保护薄膜911和半导体晶片4进行粘贴,从而形成层叠板2。
层叠板2包括半导体晶片4以及与半导体晶片4的背面接触的背面保护薄膜911。
根据需要通过加热层叠板2而使背面保护薄膜911固化。加热温度可适当设定。
通过用于检测缺口41的检测传感器来检测与背面保护薄膜911接触的半导体晶片4的缺口41。由此能够获得设置于半导体晶片4的缺口41的位置信息,能够确认背面保护薄膜911中的接触激光的区域。作为检测传感器,可列举出显微镜、透射型传感器、反射型传感器等。
根据需要,用激光对层叠板2的背面保护薄膜911进行印刷。
通过用于检测缺口41的检测传感器来检测与背面保护薄膜911接触的半导体晶片4的缺口41。由此能够获得设置于半导体晶片4的缺口41的位置信息,能够将切割带17的位置与半导体晶片4的位置进行对准。
如图16所示那样,将层叠板2与切割带17进行粘贴。
如图17所示那样,进行半导体晶片4的切割。由此形成保护芯片3。保护芯片3包括半导体元件41和配置在半导体元件41的背面上的保护膜912。半导体元件41可以用电路面(也称为表面、电路图案形成面、电极形成面等)和位于电路面对侧的背面来定义两个表面。在使切割带17真空吸附于吸附基座8的状态下,例如按照常规方法从半导体晶片4的电路面侧进行切割。可以采用被称为全切的切断方式等。作为本工序中使用的切割装置,没有特别限定,可以使用现有公知的装置。
接着,将保护芯片3从粘合剂层172剥离。即,拾取保护芯片3。
如图18所示那样,通过倒装芯片接合方式(倒装芯片安装方式),将保护芯片3固定于被粘物6。具体而言,在半导体元件41的电路面与被粘物6相对的形态下,将保护芯片3固定于被粘物6。例如,通过使设置在半导体元件41的电路面上的凸块51与覆盖于被粘物6的连接垫的接合用导电材料(焊料等)61相接触,并且一边按押一边使导电材料61熔融,从而能够确保半导体元件41与被粘物6的电导通、将保护芯片3固定于被粘物6(倒装芯片接合工序)。此时,保护芯片3与被粘物6之间形成有空隙,其空隙间距离通常为30μm~300μm左右。需要说明的是,可以将保护芯片3倒装芯片接合(倒装芯片连接)在被粘物6上,然后对保护芯片3与被粘物6的对侧面、间隙进行清洗,向间隙中填充密封材料(密封树脂等),从而进行密封。
本工序中,优选进行保护芯片3与被粘物6的对侧面(电极形成面)、间隙的清洗。
接着,进行密封工序,其用于密封进行了倒装芯片接合的保护芯片3与被粘物6之间的间隙。密封工序使用密封树脂来进行。作为此时的密封条件,没有特别限定,通常通过以175℃进行60秒钟~90秒钟的加热来进行密封树脂的热固化,但本发明不限定于此,例如可以以165℃~185℃固化数分钟。另外,通过该工序,能够使背面保护薄膜911完全或大致完全地热固化。进而,背面保护薄膜911即使为未固化状态,在该密封工序时也能够与密封材料一同热固化,因此,无需重新追加用于使背面保护薄膜911热固化的工序。
通过如上方法而得到的半导体装置(倒装芯片安装的半导体装置)包括被粘物6和固定于被粘物6的保护芯片3。能够利用激光对所述半导体装置的保护膜912进行印刷。
如上所述,半导体装置的制造方法包括将半导体晶片4与背面保护薄膜911进行粘贴的工序。半导体装置的制造方法还包括:在将半导体晶片4与背面保护薄膜911进行粘贴的工序之后,用激光对背面保护薄膜911进行印刷的工序。用激光对背面保护薄膜911进行印刷的工序包括检测半导体晶片4的缺口41的步骤。半导体装置的制造方法还包括将层叠板2与切割带17进行粘贴的工序,所述层叠板2是通过将半导体晶片4与背面保护薄膜911进行粘贴的工序而形成的。将层叠板2与切割带17进行粘贴的工序包括检测半导体晶片4的缺口41的步骤。
半导体装置的制造方法还包括在将层叠板2与切割带17进行粘贴的工序之后,通过切割而形成保护芯片3的工序。半导体装置的制造方法还包括将保护芯片3固定于被粘物6的工序。将保护芯片3固定于被粘物6的工序优选为通过倒装芯片连接将保护芯片3固定于被粘物6的工序。
(背面保护薄膜911)
背面保护薄膜911的波长555nm的总透光率为3%以上、优选为5%以上、更优选为7%以上。通过为3%以上,在将背面保护薄膜911与半导体晶片4进行粘贴后能够检测半导体晶片4的缺口41。背面保护薄膜911的波长555nm的总透光率的上限例如为50%、30%、20%。
波长555nm的总透光率可通过背面保护薄膜911的厚度、着色剂的种类等来控制。例如通过减小背面保护薄膜911的厚度、使用颜料作为着色剂,能够提高波长555nm的总透光率。
背面保护薄膜911优选为有色。通过使背面保护薄膜911为有色,可容易地对激光标识进行目视识别。背面保护薄膜911例如优选为黑色、蓝色、红色等深色。特别优选为黑色。
深色是指基本上L*a*b*色度体系所规定的L*达到60以下(0~60)[优选为50以下(0~50)、进一步优选为40以下(0~40)]的深色。
另外,黑色是指基本上L*a*b*色度体系所规定的L*达到35以下(0~35)[优选为30以下(0~30)、进一步优选为25以下(0~25)]的黑色系颜色。需要说明的是,对于黑色而言,L*a*b*色度体系所规定的a*、b*可分别根据L*值来适当选择。作为a*、b*,例如两者均优选为-10~10、更优选为-5~5、特别适合为-3~3的范围(尤其是为0或大致为0)。
需要说明的是,L*a*b*色度体系所规定的L*、a*、b*可通过使用色彩色差计(商品名“CR-200”、KONICA MINOLTA,INC.制造;色彩色差计)进行测定来求出。需要说明的是,L*a*b*色度体系是国际照明委员会(CIE)于1976年推荐的颜色空间,是指被称为CIE1976(L*a*b*)色度体系的颜色空间。另外,L*a*b*色度体系在日本工业标准中由JIS Z 8729进行规定。
背面保护薄膜911通常为未固化状态。未固化状态包括半固化状态。背面保护薄膜911优选为半固化状态。
在85℃和85%RH的气氛下放置了168小时时的背面保护薄膜911的吸湿率优选为1重量%以下、更优选为0.8重量%以下。通过为1重量%以下,能够提高激光标记性。吸湿率可通过无机填充剂的含量等来控制。
背面保护薄膜911的吸湿率的测定方法如下所示。即,将背面保护薄膜911在85℃、85%RH的恒温恒湿槽中放置168小时,由放置前后的减重率求出吸湿率。
将通过使背面保护薄膜911固化而得到的固化物在85℃和85%RH的气氛下放置了168小时时的吸湿率优选为1重量%以下、更优选为0.8重量%以下。通过为1重量%以下,能够提高激光标记性。吸湿率可通过无机填充剂的含量等来控制。
固化物的吸湿率的测定方法如下所示。即,将固化物在85℃、85%RH的恒温恒湿槽中放置168小时,由放置前后的减重率求出吸湿率。
背面保护薄膜911中的乙醇提取的凝胶率优选为50%以上、更优选为70%以上、更进一步优选为90%以上。为50%以上时,能够防止其粘附于半导体制造工艺中的夹具等。
需要说明的是,背面保护薄膜911的凝胶率可通过树脂成分的种类、其含量、交联剂的种类、其含量、以及加热温度、加热时间等来控制。
背面保护薄膜911的未固化状态下的23℃下的拉伸储能模量优选为0.5GPa以上、更优选为0.75GPa以上、进一步优选为1GPa以上。为1GPa以上时,能够防止背面保护薄膜911附着于载带。23℃下的拉伸储能模量的上限例如为50GPa。23℃下的拉伸储能模量可通过树脂成分的种类、其含量、填充材料的种类、其含量等来控制。
背面保护薄膜911可以是导电性,也可以是非导电性。
背面保护薄膜911对于半导体晶片4的粘接力(23℃、剥离角度为180°、剥离速度为300mm/分钟)优选为1N/10mm宽度以上、更优选为2N/10mm宽度以上、进一步优选为4N/10mm宽度以上。另一方面,所述粘接力优选为10N/10mm宽度以下。通过为1N/10mm宽度以上,背面保护薄膜911以优异的密合性粘贴于半导体晶片4、半导体元件,能够防止浮起等的发生。另外,在切割半导体晶片4时还能够防止芯片飞散的发生。需要说明的是,背面保护薄膜911对于半导体晶片4的粘接力例如是如下操作而测定的值。即,在背面保护薄膜911的一个面上粘贴粘合带(商品名“BT315”、日东电工株式会社制造)而对背面进行增强。其后,用50℃且2kg的辊往复一次而利用热层压法将厚度0.6mm的半导体晶片4粘贴在进行了背面增强的长度150mm、宽度10mm的背面保护薄膜911的表面(正面)。其后,在热板上(50℃)静置2分钟后,在常温(23℃左右)下静置20分钟。静置后,使用剥离试验机(商品名“AUTOGRAPH AGS-J”、岛津制作所社制造),在23℃的温度下,在剥离角度:180°、拉伸速度:300mm/分钟的条件下,剥掉进行了背面增强的背面保护薄膜911。背面保护薄膜911对于半导体晶片4的粘接力是此时在背面保护薄膜911与半导体晶片4的界面进行剥离而测定的值(N/10mm宽度)。
背面保护薄膜911的厚度优选为2μm以上、更优选为4μm以上、进一步优选为6μm以上、特别优选为10μm以上。另一方面,背面保护薄膜911的厚度优选为200μm以下、更优选为160μm以下、进一步优选为100μm以下、更进一步优选为80μm以下、特别优选为50μm以下。
背面保护薄膜911优选包含着色剂。作为着色剂,例如可列举出染料、颜料。其中优选为染料。
作为染料,优选为深色系染料。作为深色系染料,例如可列举出黑色染料、蓝色染料、红色染料等。其中,优选为黑色染料。色料可以单独使用或者组合使用2种以上。
背面保护薄膜911中的着色剂的含量优选为0.5重量%以上、更优选为1重量%以上、进一步优选为2重量%以上。背面保护薄膜911中的着色剂的含量优选为10重量%以下、更优选为8重量%以下、进一步优选为5重量%以下。
背面保护薄膜911可以包含热塑性树脂。
作为热塑性树脂,例如可列举出天然橡胶、丁基橡胶、异戊橡胶、氯丁橡胶、乙烯-醋酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯树脂、聚碳酸酯树脂、热塑性聚酰亚胺树脂、6-尼龙和/或6,6-尼龙等聚酰胺树脂、苯氧基树脂、丙烯酸类树脂、PET(聚对苯二甲酸乙二醇酯)和/或PBT(聚对苯二甲酸丁二醇酯)等饱和聚酯树脂、聚酰胺酰亚胺树脂或氟树脂等。热塑性树脂可以单独使用或者组合使用2种以上。其中,适合为丙烯酸类树脂、苯氧基树脂。
作为丙烯酸类树脂,没有特别限定,可列举出以具有碳数为30以下(碳数优选为4~18、碳数进一步优选为6~10、碳数特别优选为8或9)的直链或支链烷基的丙烯酸或甲基丙烯酸的酯中的1种或2种以上作为成分的聚合物等。即,本发明中,丙烯酸类树脂是指还包括甲基丙烯酸类树脂的广义概念。作为烷基,例如可列举出甲基、乙基、丙基、异丙基、正丁基、叔丁基、异丁基、戊基、异戊基、己基、庚基、2-乙基己基、辛基、异辛基、壬基、异壬基、癸基、异癸基、十一烷基、十二烷基(月桂基)、十三烷基、十四烷基、硬脂基、十八烷基等。
另外,作为用于形成丙烯酸类树脂的其它单体(烷基的碳数为30以下的丙烯酸或甲基丙烯酸的烷基酯以外的单体),没有特别限定,例如可列举出丙烯酸、甲基丙烯酸、丙烯酸羧基乙酯、丙烯酸羧基戊酯、衣康酸、马来酸、富马酸或巴豆酸等各种含羧基单体;马来酸酐或衣康酸酐等各种酸酐单体;(甲基)丙烯酸2-羟基乙酯、(甲基)丙烯酸2-羟基丙酯、(甲基)丙烯酸4-羟基丁酯、(甲基)丙烯酸6-羟基己酯、(甲基)丙烯酸8-羟基辛酯、(甲基)丙烯酸10-羟基癸酯、(甲基)丙烯酸12-羟基月桂酯或(4-羟基甲基环己基)-甲基丙烯酸酯等各种含羟基单体;苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯酰胺-2-甲基丙磺酸、(甲基)丙烯酰胺丙磺酸、(甲基)丙烯酸磺基丙酯或(甲基)丙烯酰氧基萘磺酸等各种含磺酸基单体;或者2-羟基乙基丙烯酰基磷酸酯等各种含磷酸基单体等。需要说明的是,(甲基)丙烯酸是指丙烯酸和/或甲基丙烯酸,本发明的(甲基)均为相同的意义。
背面保护薄膜911中的热塑性树脂的含量优选为10重量%以上、更优选为30重量%以上。背面保护薄膜911中的热塑性树脂的含量优选为90重量%以下、更优选为70重量%以下。
背面保护薄膜911可以包含热固性树脂。
作为热固性树脂,可列举出环氧树脂、酚醛树脂、氨基树脂、不饱和聚酯树脂、聚氨酯树脂、有机硅树脂、热固性聚酰亚胺树脂等。热固性树脂可以单独使用或者组合使用2种以上。作为热固性树脂,特别适合为会腐蚀半导体元件的离子性杂质等的含量少的环氧树脂。另外,作为环氧树脂的固化剂,可适合地使用酚醛树脂。
作为环氧树脂,没有特别限定,例如可以使用双酚A型环氧树脂、双酚F型环氧树脂、双酚S型环氧树脂、溴化双酚A型环氧树脂、氢化双酚A型环氧树脂、双酚AF型环氧树脂、联苯型环氧树脂、萘型环氧树脂、芴型环氧树脂、苯酚酚醛清漆型环氧树脂、邻甲酚酚醛清漆型环氧树脂、三羟基苯基甲烷型环氧树脂、四羟基苯基乙烷型环氧树脂等二官能环氧树脂、多官能环氧树脂或乙内酰脲型环氧树脂、三缩水甘油基异氰脲酸酯型环氧树脂或缩水甘油胺型环氧树脂等环氧树脂。
其中,特别优选为酚醛清漆型环氧树脂、联苯型环氧树脂、三羟基苯基甲烷型环氧树脂、四羟基苯基乙烷型环氧树脂。这是因为,这些环氧树脂与作为固化剂的酚醛树脂富有反应性、耐热性等优异。
进而,酚醛树脂作为环氧树脂的固化剂而起作用,例如可列举出苯酚酚醛清漆树脂、苯酚芳烷基树脂、甲酚酚醛清漆树脂、叔丁基苯酚酚醛清漆树脂、壬基苯酚酚醛清漆树脂等酚醛清漆型酚醛树脂、甲阶型酚醛树脂、聚对羟基苯乙烯等聚氧苯乙烯等。酚醛树脂可以单独使用或者组合使用2种以上。这些酚醛树脂之中,特别优选为苯酚酚醛清漆树脂、苯酚芳烷基树脂。这是因为能够提高半导体装置的连接可靠性。
关于环氧树脂与酚醛树脂的配混比例,例如适合的是,以酚醛树脂中的羟基相对于环氧树脂中的环氧基1当量达到0.5当量~2.0当量的方式进行配混。更适合为0.8当量~1.2当量。
背面保护薄膜911中的热固性树脂的含量优选为2重量%以上、更优选为5重量%以上。背面保护薄膜911中的热固性树脂的含量优选为40重量%以下、更优选为20重量%以下。
背面保护薄膜911可以包含环氧树脂和酚醛树脂的热固化促进催化剂。作为热固化促进催化剂,没有特别限定,可以从公知的热固化促进催化剂中适当选择并使用。热固化促进催化剂可以单独使用或者组合使用2种以上。作为热固化促进催化剂,例如可以使用胺系固化促进剂、磷系固化促进剂、咪唑系固化促进剂、硼系固化促进剂、磷-硼系固化促进剂等。
为了使背面保护薄膜911预先进行某种程度的交联,优选的是,在制作时,作为交联剂而预先添加与聚合物的分子链末端的官能团等发生反应的多官能性化合物。由此能够提高高温下的粘接特性并实现耐热性的改善。
作为交联剂,没有特别限定,可以使用公知的交联剂。具体而言,例如可列举出异氰酸酯系交联剂、环氧系交联剂、三聚氰胺系交联剂、过氧化物系交联剂、脲系交联剂、金属醇盐系交联剂、金属螯合物系交联剂、金属盐系交联剂、碳二亚胺系交联剂、噁唑啉系交联剂、氮丙啶系交联剂、胺系交联剂等。作为交联剂,适合为异氰酸酯系交联剂、环氧系交联剂。另外,交联剂可以单独使用或者组合使用2种以上。
作为异氰酸酯系交联剂,例如可列举出1,2-亚乙基二异氰酸酯、1,4-亚丁基二异氰酸酯、1,6-六亚甲基二异氰酸酯等低级脂肪族多异氰酸酯类;环亚戊基二异氰酸酯、环亚己基二异氰酸酯、异佛尔酮二异氰酸酯、氢化甲苯二异氰酸酯、氢化二甲苯二异氰酸酯等脂环族多异氰酸酯类;2,4-甲苯二异氰酸酯、2,6-甲苯二异氰酸酯、4,4’-二苯基甲烷二异氰酸酯、苯二亚甲基二异氰酸酯等芳香族多异氰酸酯类等,除此之外,还可以使用三羟甲基丙烷/甲苯二异氰酸酯三聚体加成物[Nippon Polyurethane Industry Co.,Ltd.制造、商品名“CORONATE L”]、三羟甲基丙烷/六亚甲基二异氰酸酯三聚体加成物[Nippon Polyurethane Industry Co.,Ltd.制造、商品名“CORONATE HL”]等。另外,作为环氧系交联剂,例如可列举出N,N,N’,N’-四缩水甘油基间苯二胺、二缩水甘油基苯胺、1,3-双(N,N-缩水甘油基氨基甲基)环己烷、1,6-己二醇二缩水甘油醚、新戊二醇二缩水甘油醚、乙二醇二缩水甘油醚、丙二醇二缩水甘油醚、聚乙二醇二缩水甘油醚、聚丙二醇二缩水甘油醚、山梨糖醇多缩水甘油醚、甘油多缩水甘油醚、季戊四醇多缩水甘油醚、聚甘油多缩水甘油醚、脱水山梨糖醇多缩水甘油醚、三羟甲基丙烷多缩水甘油醚、己二酸二缩水甘油酯、邻苯二甲酸二缩水甘油酯、三缩水甘油基三(2-羟基乙基)异氰脲酸酯、间苯二酚二缩水甘油醚、双酚-S-二缩水甘油醚、以及分子内具有2个以上环氧基的环氧系树脂等。
需要说明的是,本发明中,还可以照射电子射线、紫外线等来代替使用交联剂,或者在使用交联剂的同时照射电子射线、紫外线等,由此实施交联处理。
背面保护薄膜911可以包含填充剂。通过包含填充剂,能够实现背面保护薄膜911的弹性模量的调节等。
作为填充剂,可以是无机填充剂、有机填充剂中的任一种,适合为无机填充剂。作为无机填充剂,例如可列举出二氧化硅、粘土、石膏、碳酸钙、硫酸钡、氧化铝、氧化铍、碳化硅、氮化硅等陶瓷类;铝、铜、银、金、镍、铬、铅、锡、锌、钯、焊料等金属;或者合金类、其它包含碳等的各种无机粉末等。填充剂可以单独使用或者组合使用2种以上。作为填充剂,其中适合为二氧化硅、特别适合为熔融二氧化硅。需要说明的是,无机填充剂的平均粒径优选在0.1μm~80μm的范围内。无机填充剂的平均粒径例如可通过激光衍射型粒度分布测定装置来测定。
背面保护薄膜911中的填充剂的含量优选为10重量%以上、更优选为20重量%以上。背面保护薄膜911中的填充剂的含量优选为70重量%以下、更优选为50重量%以下。
背面保护薄膜911可以适当包含其它添加剂。作为其它添加剂,例如可列举出阻燃剂、硅烷偶联剂、离子捕获剂、增量剂、防老剂、抗氧化剂、表面活性剂等。
作为阻燃剂,例如可列举出三氧化锑、五氧化锑、溴化环氧树脂等。阻燃剂可以单独使用或者组合使用2种以上。作为硅烷偶联剂,例如可列举出β-(3,4-环氧环己基)乙基三甲氧基硅烷、γ-环氧丙氧基丙基三甲氧基硅烷、γ-环氧丙氧基丙基甲基二乙氧基硅烷等。硅烷偶联剂可以单独使用或者组合使用2种以上。作为离子捕获剂,例如可列举出水滑石类、氢氧化铋等。离子捕获剂可以单独使用或者组合使用2种以上。
通过将热固性树脂、热塑性树脂和溶剂等混合而制备混合液,将混合液涂布在剥离纸上并干燥的方法等,能够获得背面保护薄膜911。
(变形例1)
背面保护薄膜911呈现包括第1层和配置在第1层上的第2层的多层形状。
实施例
以下例示性地详细说明本发明的适合实施例。其中,在没有特别限定性记载的情况下,该实施例中记载的材料、配混量等并不表示将本发明的范围仅限定于这些材料、配混量。
[背面保护薄膜的制作]
针对用于制作背面保护薄膜的成分进行说明。
环氧树脂:DIC Corporation制造、“HP-4700”
酚醛树脂:明和化成株式会社制造、“MEH-7851H”
丙烯酸类橡胶:Nagase ChemteX Corporation.制造、“Teisan Resin SG-P3”
二氧化硅填料:Admatechs.公司制造、“SE-2050-MCV“(平均一次粒径为0.5μm)
着色剂1:Orient Chemical Industries Co.,Ltd.制造、“NUBIAN BLACKTN877”
着色剂2:Orient Chemical Industries Co.,Ltd.制造、“SOM-L-0543”
着色剂3:Orient Chemical Industries Co.,Ltd.制造、“ORIPACS B-35”
按照表1所述的配混比,将各成分溶于甲乙酮,从而制备固体成分浓度为22重量%的粘接剂组合物的溶液。将粘接剂组合物的溶液涂布在剥离衬垫(进行了有机硅脱模处理且厚度为50μm的聚对苯二甲酸乙二醇酯薄膜)上,然后以130℃干燥2分钟,从而制作背面保护薄膜。将背面保护薄膜的厚度示于表1。
[评价]
针对背面保护薄膜进行以下的评价。将结果示于表1。
(波长555nm的总透光率)
针对背面保护薄膜,按照下述条件测定波长555nm的总透光率(%)。
<光线透过率测定条件>
测定装置:紫外可见近红外分光光度计V-670DS(日本分光株式会社制造)
速度:2000nm/分钟
测定范围:400~1600nm
积分球:ISN-723
光斑直径:1cm见方
(缺口检测)
将背面保护薄膜与8英寸的镜面晶片以70℃进行粘贴,利用数字式显微镜以50%的光量能够检测到缺口时判定为○、无法检测到缺口时判定为×。
(凝胶率)
从背面保护薄膜取样约0.1g并精密称量(试样的重量),将样品用网状片包裹后,在约50ml乙醇中以室温浸渍1星期。其后,将溶剂不溶成分(网状片的内容物)从乙醇中取出,以130℃干燥约2小时,称量干燥后的溶剂不溶成分(浸渍/干燥后的重量),利用下述式(a)算出凝胶率(%)。
凝胶率(%)=[(浸渍/干燥后的重量)/(试样的重量)]×100 (a)
(拉伸储能模量)
使用Rheometric Scientific Ltd制造的动态粘弹性测定装置“SolidAnalyzer RS A2”,在拉伸模式下,在样品宽度:10mm、样品长度:22.5mm、样品厚度:0.2mm下,在频率:1Hz、升温速度:10℃/分钟、氮气气氛下,以规定温度(23℃)测定拉伸储能模量。
[表1]
(背面保护薄膜)
Claims (11)
1.一种设置有缺口的背面保护薄膜,其用于粘贴在半导体晶片的背面,所述背面保护薄膜的外周小于所述半导体晶片的外周。
2.一种薄膜,其包括:
隔离膜、以及
配置在所述隔离膜上的权利要求1所述的背面保护薄膜。
3.根据权利要求2所述的薄膜,其呈现卷状。
4.一种半导体装置的制造方法,其包括将半导体晶片和外周小于所述半导体晶片的外周且设置有缺口的背面保护薄膜进行粘贴的工序。
5.根据权利要求4所述的半导体装置的制造方法,其中,将所述半导体晶片和所述背面保护薄膜进行粘贴的工序是通过将所述半导体晶片和所述背面保护薄膜进行粘贴而形成层叠板的工序,所述层叠板包括所述半导体晶片以及与所述半导体晶片的背面接触的所述背面保护薄膜,将所述背面保护薄膜配置于面前并从垂直于所述半导体晶片的方向进行观察时,所述层叠板呈现所述背面保护薄膜的所述缺口与设置于所述半导体晶片的缺口的一部分轮廓重合的轮廓。
6.根据权利要求4所述的半导体装置的制造方法,其中,将所述半导体晶片和所述背面保护薄膜进行粘贴的工序是通过将所述半导体晶片和所述背面保护薄膜进行粘贴而形成层叠板的工序,所述层叠板包括所述半导体晶片以及与所述半导体晶片的背面接触的所述背面保护薄膜,将所述背面保护薄膜配置于面前并从垂直于所述半导体晶片的方向进行观察时,所述层叠板呈现设置于所述半导体晶片的缺口的轮廓与所述背面保护薄膜的所述缺口的轮廓相比位于所述半导体晶片的半径方向的外侧的形状。
7.一种保护芯片的制造方法,其中,所述保护芯片包括半导体元件和配置在所述半导体元件的背面上的保护膜,
所述制造方法包括将半导体晶片和外周小于所述半导体晶片的外周且设置有缺口的背面保护薄膜进行粘贴的工序。
8.一种背面保护薄膜,其用于粘贴在半导体晶片的背面,
该背面保护薄膜的波长555nm的总透光率为3%以上。
9.一种薄膜,其包括:
隔离膜、以及
配置在所述隔离膜上的权利要求8所述的背面保护薄膜。
10.一种半导体装置的制造方法,其包括将半导体晶片和波长555nm的总透光率为3%以上的背面保护薄膜进行粘贴的工序。
11.一种保护芯片的制造方法,其中,所述保护芯片包括半导体元件和配置在所述半导体元件的背面上的保护膜,
该制造方法包括将半导体晶片和波长555nm的总透光率为3%以上的背面保护薄膜进行粘贴的工序。
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- 2016-04-28 KR KR1020160052158A patent/KR20160129756A/ko unknown
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- 2016-04-29 TW TW105113558A patent/TW201703172A/zh unknown
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CN107431007A (zh) * | 2015-10-21 | 2017-12-01 | 古河电气工业株式会社 | 半导体晶片的背面磨削加工用表面保护胶带和半导体晶片的磨削加工方法 |
CN107431007B (zh) * | 2015-10-21 | 2020-09-18 | 古河电气工业株式会社 | 半导体晶片的背面磨削加工用表面保护胶带和半导体晶片的磨削加工方法 |
Also Published As
Publication number | Publication date |
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JP2016210837A (ja) | 2016-12-15 |
TW201703172A (zh) | 2017-01-16 |
KR20160129756A (ko) | 2016-11-09 |
US20160322308A1 (en) | 2016-11-03 |
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