CN106068565B - 受应力鳍NMOS FinFET的方法和装置 - Google Patents

受应力鳍NMOS FinFET的方法和装置 Download PDF

Info

Publication number
CN106068565B
CN106068565B CN201580010571.6A CN201580010571A CN106068565B CN 106068565 B CN106068565 B CN 106068565B CN 201580010571 A CN201580010571 A CN 201580010571A CN 106068565 B CN106068565 B CN 106068565B
Authority
CN
China
Prior art keywords
fin
region
embedded
stressor element
channel region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201580010571.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN106068565A (zh
Inventor
J·J·徐
C·F·耶普
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of CN106068565A publication Critical patent/CN106068565A/zh
Application granted granted Critical
Publication of CN106068565B publication Critical patent/CN106068565B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/798—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being provided in or under the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
CN201580010571.6A 2014-02-28 2015-02-17 受应力鳍NMOS FinFET的方法和装置 Expired - Fee Related CN106068565B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201461946105P 2014-02-28 2014-02-28
US61/946,105 2014-02-28
US14/281,660 US9306066B2 (en) 2014-02-28 2014-05-19 Method and apparatus of stressed FIN NMOS FinFET
US14/281,660 2014-05-19
PCT/US2015/016081 WO2015130507A1 (en) 2014-02-28 2015-02-17 Method and apparatus of stressed fin nmos finfet

Publications (2)

Publication Number Publication Date
CN106068565A CN106068565A (zh) 2016-11-02
CN106068565B true CN106068565B (zh) 2019-05-10

Family

ID=54007149

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580010571.6A Expired - Fee Related CN106068565B (zh) 2014-02-28 2015-02-17 受应力鳍NMOS FinFET的方法和装置

Country Status (5)

Country Link
US (1) US9306066B2 (cg-RX-API-DMAC10.html)
EP (1) EP3111481A1 (cg-RX-API-DMAC10.html)
JP (1) JP2017506830A (cg-RX-API-DMAC10.html)
CN (1) CN106068565B (cg-RX-API-DMAC10.html)
WO (1) WO2015130507A1 (cg-RX-API-DMAC10.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9391074B1 (en) * 2015-04-21 2016-07-12 International Business Machines Corporation Structure for FinFET fins
CN106549053B (zh) * 2015-09-17 2021-07-27 联华电子股份有限公司 半导体结构及其制作方法
US9904758B2 (en) * 2016-05-18 2018-02-27 Samsung Electronics Co., Ltd. Using deep sub-micron stress effects and proximity effects to create a high performance standard cell
US10644112B2 (en) 2016-09-28 2020-05-05 Intel Corporation Systems, methods and devices for isolation for subfin leakage
US10276693B1 (en) * 2017-10-31 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10374089B2 (en) 2017-12-22 2019-08-06 International Business Machines Corporation Tensile strain in NFET channel

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030111699A1 (en) * 2001-12-14 2003-06-19 Christoph Wasshuber Methods and apparatus for inducing stress in a semiconductor device
US20110198695A1 (en) * 2010-02-18 2011-08-18 International Business Machines Corporation Strained Semiconductor Structures and Method of Fabricating Strained Semiconductor Structures
CN101924107B (zh) * 2010-07-15 2012-09-26 电子科技大学 一种应力增强的cmos晶体管结构

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6887751B2 (en) 2003-09-12 2005-05-03 International Business Machines Corporation MOSFET performance improvement using deformation in SOI structure
US8450806B2 (en) 2004-03-31 2013-05-28 International Business Machines Corporation Method for fabricating strained silicon-on-insulator structures and strained silicon-on insulator structures formed thereby
JP2007088158A (ja) * 2005-09-21 2007-04-05 Toshiba Corp 半導体装置およびその製造方法
US20070257310A1 (en) 2006-05-02 2007-11-08 Honeywell International Inc. Body-tied MOSFET device with strained active area
US7462916B2 (en) 2006-07-19 2008-12-09 International Business Machines Corporation Semiconductor devices having torsional stresses
US20080121948A1 (en) 2006-08-16 2008-05-29 International Business Machines Corporation FINFET drive strength de-quantization using multiple orientation fins
US8623728B2 (en) 2009-07-28 2014-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming high germanium concentration SiGe stressor
WO2011121776A1 (ja) 2010-03-31 2011-10-06 株式会社 東芝 半導体装置の製造方法
US8278175B2 (en) 2010-06-10 2012-10-02 International Business Machines Corporation Compressively stressed FET device structures
US8647935B2 (en) 2010-12-17 2014-02-11 International Business Machines Corporation Buried oxidation for enhanced mobility
US8492235B2 (en) * 2010-12-29 2013-07-23 Globalfoundries Singapore Pte. Ltd. FinFET with stressors
US8981481B2 (en) 2012-06-28 2015-03-17 Intel Corporation High voltage three-dimensional devices having dielectric liners
US8823060B1 (en) 2013-02-20 2014-09-02 Taiwan Semiconductor Manufacturing Co., Ltd. Method for inducing strain in FinFET channels
US8969155B2 (en) * 2013-05-10 2015-03-03 International Business Machines Corporation Fin structure with varying isolation thickness

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030111699A1 (en) * 2001-12-14 2003-06-19 Christoph Wasshuber Methods and apparatus for inducing stress in a semiconductor device
US20110198695A1 (en) * 2010-02-18 2011-08-18 International Business Machines Corporation Strained Semiconductor Structures and Method of Fabricating Strained Semiconductor Structures
CN101924107B (zh) * 2010-07-15 2012-09-26 电子科技大学 一种应力增强的cmos晶体管结构

Also Published As

Publication number Publication date
CN106068565A (zh) 2016-11-02
US20150249155A1 (en) 2015-09-03
WO2015130507A1 (en) 2015-09-03
JP2017506830A (ja) 2017-03-09
EP3111481A1 (en) 2017-01-04
US9306066B2 (en) 2016-04-05

Similar Documents

Publication Publication Date Title
CN107731895B (zh) 半导体器件
CN104282756B (zh) 半导体器件及其制造方法
CN105428238B (zh) 一种FinFET器件及其制作方法和电子装置
CN103515422B (zh) 具有高迁移率和应变沟道的FinFET
CN104124174B (zh) 半导体结构及其形成方法
US9825147B2 (en) Method of forming high voltage metal-oxide-semiconductor transistor device
US10269928B2 (en) Semiconductor devices having 3D channels, and methods of fabricating semiconductor devices having 3D channels
CN106068565A (zh) 受应力鳍NMOS FinFET的方法和装置
CN109065611A (zh) 具有非分立的源极区和漏极区的纳米线结构
CN107248503A (zh) 具有3d 沟道的半导体器件及其制造方法
TW200529434A (en) Semiconductor device having a triple gate transistor and method for manufacturing the same
US12154983B2 (en) Lateral double-diffused metal oxide semiconductor device and manufacturing method thereof, and electronic apparatus
CN106796954A (zh) 用于在硅锗FinFET中形成源极‑漏极结的方法和相应的FinFET装置
CN103956338A (zh) 一种集成u形沟道器件和鳍形沟道器件的集成电路及其制备方法
CN1957475B (zh) 通过利用多个窄部分布局增强应变器件性能
JP2017506830A5 (cg-RX-API-DMAC10.html)
CN107452789B (zh) 用于器件制造的改进布局
CN109300991A (zh) 薄膜晶体管及其制备方法、阵列基板、显示面板及装置
CN103515205B (zh) 一种FinFET沟道掺杂方法
JP6948099B2 (ja) マルチ閾値ＰＭＯＳトランジスタのための埋め込みＳｉＧｅプロセス
TWI261321B (en) Semiconductor device including bipolar junction transistor with protected emitter-base junction
KR20140046256A (ko) 반도체 장치 및 그 제조 방법
TW560066B (en) Method of manufacturing MOSEFT and structure thereof
CN102044433B (zh) 一种混合源漏场效应晶体管及其制备方法
CN102891179B (zh) 半导体器件及其制造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20190510

Termination date: 20210217

CF01 Termination of patent right due to non-payment of annual fee