CN106059580A - 原子室及其制造方法、量子干涉装置、原子振荡器、电子设备和移动体 - Google Patents
原子室及其制造方法、量子干涉装置、原子振荡器、电子设备和移动体 Download PDFInfo
- Publication number
- CN106059580A CN106059580A CN201610220612.0A CN201610220612A CN106059580A CN 106059580 A CN106059580 A CN 106059580A CN 201610220612 A CN201610220612 A CN 201610220612A CN 106059580 A CN106059580 A CN 106059580A
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- China
- Prior art keywords
- region
- alkali metal
- atom
- atomic
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 150000001340 alkali metals Chemical class 0.000 claims abstract description 126
- 229910052783 alkali metal Inorganic materials 0.000 claims abstract description 93
- 239000000463 material Substances 0.000 claims abstract description 45
- 150000001875 compounds Chemical class 0.000 claims abstract description 31
- 239000007787 solid Substances 0.000 claims abstract description 21
- 239000007788 liquid Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 40
- 238000010438 heat treatment Methods 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 14
- 238000007789 sealing Methods 0.000 claims description 11
- 238000002360 preparation method Methods 0.000 claims description 10
- 238000003860 storage Methods 0.000 claims description 3
- 239000011148 porous material Substances 0.000 claims 4
- 238000005247 gettering Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 57
- 230000005284 excitation Effects 0.000 description 37
- 150000002736 metal compounds Chemical class 0.000 description 36
- 239000007789 gas Substances 0.000 description 29
- 230000003287 optical effect Effects 0.000 description 19
- 238000010586 diagram Methods 0.000 description 16
- 238000000354 decomposition reaction Methods 0.000 description 12
- 238000004891 communication Methods 0.000 description 11
- 230000006870 function Effects 0.000 description 11
- 230000005283 ground state Effects 0.000 description 11
- 230000007423 decrease Effects 0.000 description 10
- 239000011521 glass Substances 0.000 description 10
- 230000010355 oscillation Effects 0.000 description 9
- 239000000126 substance Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000002585 base Substances 0.000 description 7
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 7
- 238000001514 detection method Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000009467 reduction Effects 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 229910052792 caesium Inorganic materials 0.000 description 5
- AIYUHDOJVYHVIT-UHFFFAOYSA-M caesium chloride Chemical compound [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 description 5
- 239000011575 calcium Substances 0.000 description 5
- 239000003638 chemical reducing agent Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 4
- 239000003513 alkali Substances 0.000 description 4
- 229910052791 calcium Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000005281 excited state Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- AYTVLULEEPNWAX-UHFFFAOYSA-N cesium;azide Chemical compound [Cs+].[N-]=[N+]=[N-] AYTVLULEEPNWAX-UHFFFAOYSA-N 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 229910052701 rubidium Inorganic materials 0.000 description 3
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 241000251468 Actinopterygii Species 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- KZCAZNLDQWOKPM-UHFFFAOYSA-L [Cs].[Cr](=O)(=O)(O)O Chemical compound [Cs].[Cr](=O)(=O)(O)O KZCAZNLDQWOKPM-UHFFFAOYSA-L 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001339 alkali metal compounds Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- -1 and the like Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 230000036772 blood pressure Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G04—HOROLOGY
- G04F—TIME-INTERVAL MEASURING
- G04F5/00—Apparatus for producing preselected time intervals for use as timing standards
- G04F5/14—Apparatus for producing preselected time intervals for use as timing standards using atomic clocks
-
- G—PHYSICS
- G04—HOROLOGY
- G04F—TIME-INTERVAL MEASURING
- G04F5/00—Apparatus for producing preselected time intervals for use as timing standards
- G04F5/14—Apparatus for producing preselected time intervals for use as timing standards using atomic clocks
- G04F5/145—Apparatus for producing preselected time intervals for use as timing standards using atomic clocks using Coherent Population Trapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
- H01S1/06—Gaseous, i.e. beam masers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B17/00—Generation of oscillations using radiation source and detector, e.g. with interposed variable obturator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/26—Automatic control of frequency or phase; Synchronisation using energy levels of molecules, atoms, or subatomic particles as a frequency reference
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Ecology (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015083450A JP2016207695A (ja) | 2015-04-15 | 2015-04-15 | 原子セル、原子セルの製造方法、量子干渉装置、原子発振器、電子機器および移動体 |
| JP2015-083450 | 2015-04-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106059580A true CN106059580A (zh) | 2016-10-26 |
Family
ID=57130044
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610220612.0A Withdrawn CN106059580A (zh) | 2015-04-15 | 2016-04-11 | 原子室及其制造方法、量子干涉装置、原子振荡器、电子设备和移动体 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US10033394B2 (enExample) |
| JP (1) | JP2016207695A (enExample) |
| CN (1) | CN106059580A (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108107707A (zh) * | 2017-11-22 | 2018-06-01 | 北京无线电计量测试研究所 | 一种原子气体腔室以及制备方法 |
| CN108681616A (zh) * | 2018-03-28 | 2018-10-19 | 中国电子科技集团公司第三十六研究所 | 一种选取飞机舱外天线安装点的方法、装置和智能终端 |
| CN109787627A (zh) * | 2017-11-14 | 2019-05-21 | 精工爱普生株式会社 | 原子振荡器以及频率信号生成系统 |
| CN113371675A (zh) * | 2020-02-25 | 2021-09-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种原子气室及其制作方法 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3038892B1 (fr) * | 2015-07-16 | 2017-08-11 | Centre Nat Rech Scient | Cellule a gaz pour un capteur atomique et procede de remplissage d'une cellule a gaz |
| WO2017018846A1 (ko) * | 2015-07-30 | 2017-02-02 | 한국과학기술원 | 칩 스케일 원자시계를 위한 전기 광학 기능이 구비된 증기셀 및 칩 스케일 기기를 위한 밀폐용기 제작 방법 |
| JP6891760B2 (ja) * | 2017-10-27 | 2021-06-18 | セイコーエプソン株式会社 | 周波数信号生成装置および周波数信号生成システム |
| JP2019193238A (ja) | 2018-04-27 | 2019-10-31 | セイコーエプソン株式会社 | 原子発振器および周波数信号生成システム |
| US20220262929A1 (en) * | 2021-02-17 | 2022-08-18 | ColdQuanta, Inc. | Pulsed-laser modification of quantum-particle cells |
| US11997780B2 (en) | 2020-06-26 | 2024-05-28 | ColdQuanta, Inc. | Vacuum cell with electric-field control |
| WO2022097557A1 (ja) * | 2020-11-06 | 2022-05-12 | 国立大学法人京都大学 | 金属ガス封入セル及びその製造方法 |
| EP4307565A4 (en) * | 2021-03-11 | 2025-03-19 | National Institute of Information and Communications Technology | Substrate, manufacturing method for substrate and manufacturing method for unit cell |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ITMI20070301A1 (it) | 2007-02-16 | 2008-08-17 | Getters Spa | Supporti comprendenti materiali getter e sorgenti di metalli alcalini o alcalino-terrosi per sistemi di termoregolazione basati su effetto tunnel |
| JP2009283526A (ja) | 2008-05-20 | 2009-12-03 | Epson Toyocom Corp | ガスセルの製造方法及びガスセル |
| US8242851B2 (en) | 2010-02-04 | 2012-08-14 | Honeywell International Inc. | Processes for stabilizing a VCSEL in a chip-scale atomic clock |
| US8941442B2 (en) | 2010-02-04 | 2015-01-27 | Honeywell International Inc. | Fabrication techniques to enhance pressure uniformity in anodically bonded vapor cells |
| US8299860B2 (en) | 2010-02-04 | 2012-10-30 | Honeywell International Inc. | Fabrication techniques to enhance pressure uniformity in anodically bonded vapor cells |
| US8067991B2 (en) | 2010-02-04 | 2011-11-29 | Honeywell International Inc. | Chip-scale atomic clock with two thermal zones |
| US20110187464A1 (en) | 2010-02-04 | 2011-08-04 | Honeywell International Inc. | Apparatus and methods for alkali vapor cells |
| US8218590B2 (en) | 2010-02-04 | 2012-07-10 | Honeywell International Inc. | Designs and processes for thermally stabilizing a vertical cavity surface emitting laser (vcsel) in a chip-scale atomic clock |
| JP5821439B2 (ja) * | 2011-02-16 | 2015-11-24 | セイコーエプソン株式会社 | ガスセルの製造方法 |
| JP5712066B2 (ja) | 2011-06-27 | 2015-05-07 | 株式会社日立製作所 | 磁場計測装置、磁場計測装置製造方法 |
| JP6031787B2 (ja) | 2011-07-13 | 2016-11-24 | 株式会社リコー | 原子発振器の製造方法 |
| JP6036230B2 (ja) | 2012-11-30 | 2016-11-30 | 株式会社リコー | アルカリ金属セルの製造方法及び原子発振器の製造方法 |
| JP6119295B2 (ja) * | 2013-02-18 | 2017-04-26 | セイコーエプソン株式会社 | 量子干渉装置、原子発振器および移動体 |
| JP6179277B2 (ja) * | 2013-08-29 | 2017-08-16 | 株式会社リコー | アルカリ金属セルの製造方法及び原子発振器の製造方法 |
| JP6171748B2 (ja) * | 2013-09-05 | 2017-08-02 | セイコーエプソン株式会社 | 原子セル、量子干渉装置、原子発振器、電子機器および移動体 |
| US9312869B2 (en) * | 2013-10-22 | 2016-04-12 | Honeywell International Inc. | Systems and methods for a wafer scale atomic clock |
-
2015
- 2015-04-15 JP JP2015083450A patent/JP2016207695A/ja not_active Withdrawn
-
2016
- 2016-04-11 CN CN201610220612.0A patent/CN106059580A/zh not_active Withdrawn
- 2016-04-13 US US15/097,659 patent/US10033394B2/en not_active Expired - Fee Related
-
2018
- 2018-01-11 US US15/867,969 patent/US20180212613A1/en not_active Abandoned
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109787627A (zh) * | 2017-11-14 | 2019-05-21 | 精工爱普生株式会社 | 原子振荡器以及频率信号生成系统 |
| CN108107707A (zh) * | 2017-11-22 | 2018-06-01 | 北京无线电计量测试研究所 | 一种原子气体腔室以及制备方法 |
| CN108681616A (zh) * | 2018-03-28 | 2018-10-19 | 中国电子科技集团公司第三十六研究所 | 一种选取飞机舱外天线安装点的方法、装置和智能终端 |
| CN113371675A (zh) * | 2020-02-25 | 2021-09-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种原子气室及其制作方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20180212613A1 (en) | 2018-07-26 |
| US10033394B2 (en) | 2018-07-24 |
| US20160308543A1 (en) | 2016-10-20 |
| JP2016207695A (ja) | 2016-12-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20161026 |
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| WW01 | Invention patent application withdrawn after publication |