CN106011749A - 一种电子元器件表面镀膜工艺 - Google Patents

一种电子元器件表面镀膜工艺 Download PDF

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CN106011749A
CN106011749A CN201610617073.4A CN201610617073A CN106011749A CN 106011749 A CN106011749 A CN 106011749A CN 201610617073 A CN201610617073 A CN 201610617073A CN 106011749 A CN106011749 A CN 106011749A
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罗文彬
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HEFEI JIARUILIN ELECTRONIC TECHNOLOGY CO LTD
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
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Abstract

本发明公开了一种电子元器件表面镀膜工艺，它包括以下步骤：调配镀膜材料铝和硅；将调配好的镀膜材料铝和硅放入真空镀膜设备真空室内的材料筐；投入待镀膜产品，关真空室大门，对真空室进行抽真空；启动真空镀膜设备真空室的半自动蒸发功能；将电压调至5.10V，进行时间为12s的预蒸发阶段；将电压调至8.85V，进行时间为10s的蒸发阶段；开真空室大门并放入空气，取出产品；该工艺可有效解决电膜层颜色偏黄的问题。

Description

一种电子元器件表面镀膜工艺
技术领域
本发明涉及膜制造领域，特别涉及一种电子元器件表面镀膜工艺。
背景技术
目前电镀行业面临两大社会问题：职业健康与环境污染问题。企业、劳动者对企业社会责任、职业健康的高度关注，传统的高污染、高危害的工业水电镀技术必将被新兴的工艺——真空镀膜逐步取代。
手机外壳和平板电脑外框等塑胶一般要进行真空镀膜，由于手机和平板电脑都是带电体，因此，进行真空镀膜时，要求外壳、外框镀上不导电膜层。
目前，不导电膜层镀膜工艺已普遍成熟，一般采用预热后蒸发镀膜工艺，大多使用相同工艺参数及材料，及使用硅锡合金（30：70）蒸发镀膜；然而，硅锡合金在蒸镀过程中颜色不统一，光泽度不够，金属质感差，在自然光环境下，因为硅锡合金易氧化，产品不能在空气中暴露太久。
目前，国内不导电膜层镀膜工艺多数是采用蒸发单体镀膜机制备不连续导电膜，存在产量低、均匀性不好和制造成本高等问题，而且硅、锡又是稀有金属，生产成本居高不下。
磁控溅射镀膜技术能够做到镀膜的膜层具有色泽均匀，清晰度高，持久隔热以及不褪色等特点，但该技术中溅射效率容易受到多种因素的影响，尤其是靶材的选择及其尺寸的影响。
发明内容
本发明所要解决的技术问题是提供一种电子元器件表面镀膜工艺，以解决现有技术中导致的上述多项缺陷。
1.为实现上述目的，本发明提供以下的技术方案：一种电子元器件表面镀膜工艺，它包括以下步骤：
1）采用电子束蒸镀、溅射镀或热气流蒸镀的方式在清洗后的产品表面形成SiO2膜层；
2）调配镀膜材料铝和硅，质量配比为2:5；
3）将调配好的镀膜材料铝和硅放入真空镀膜设备真空室内的材料筐；
4）投入待镀膜产品，关真空室大门，对真空室进行抽真空，启动真空镀膜设备；
5）取出产品采用电子束蒸镀、溅射镀或热气流蒸镀的方式在镀有SiO2膜层的产品表面形成防 污膜层；
6）将产品放入真空镀膜室，启动真空室的半自动蒸发功能，；
7）开真空室大门并放入空气，取出产品。
优选的：所述步骤6）中，将电压调至2.70V，进行时间为28s的预热阶段；将电压调至5.10V，进行时间为12s的预蒸发阶段；将电压调至8.85V，进行时间为8--12s的蒸发阶段
优选的：所述步骤3）中，真空室内抽真空后的真空度为2.0×10-2Pa。
优选的：所述蒸发时间为10s。
采用以上技术方案的有益效果是：由于该工艺采用的镀膜材料为铝和硅，而且由于镀膜材料的不同，预热阶段与蒸发阶段之间增加了预蒸发阶段，使得镀膜材料蒸发更完全，加上铝在自然光环境下不易发生氧化，以及硅的作用，使得不导电膜层颜色不易偏黄。
具体实施方式
下面详细说明本发明的优选实施方式。
本发明的具体实施方式：一种电子元器件表面镀膜工艺，它包括以下步骤：
1）采用电子束蒸镀、溅射镀或热气流蒸镀的方式在清洗后的产品表面形成SiO2膜层；
2）调配镀膜材料铝和硅，质量配比为2:5；
3）将调配好的镀膜材料铝和硅放入真空镀膜设备真空室内的材料筐；
4）投入待镀膜产品，关真空室大门，对真空室进行抽真空，启动真空镀膜设备；
5）取出产品采用电子束蒸镀、溅射镀或热气流蒸镀的方式在镀有SiO2膜层的产品表面形成防 污膜层；
6）将产品放入真空镀膜室，启动真空室的半自动蒸发功能，；
7）开真空室大门并放入空气，取出产品。
所述步骤6）中，将电压调至2.70V，进行时间为28s的预热阶段；将电压调至5.10V，进行时间为12s的预蒸发阶段；将电压调至8.85V，进行时间为8--12s的蒸发阶段，所述蒸发时间为10s。
所述步骤3）中，真空室内抽真空后的真空度为2.0×10-2Pa。
由于该工艺采用的镀膜材料为铝和硅，而且由于镀膜材料的不同，预热阶段与蒸发阶段之间增加了预蒸发阶段，使得镀膜材料蒸发更完全，加上铝在自然光环境下不易发生氧化，以及硅的作用，使得不导电膜层颜色不易偏黄。
由于铝的导电性极佳，用来制作不导电膜，工艺上必须有突破，蒸发时要有适当的电压和适当的时间控制。因为铝的熔点高，如果电压过低，则蒸发不完全，电压过高则可能导电，时间过短则蒸发不完全，时间过长也可能会导电。因此针对这种铝加上硅的镀膜材料，采用“分步同时蒸发方式”，“分步”即先预热、再预蒸发、最后蒸发，“同时”即将调配好的铝和硅两种材料同时放在一个材料筐里进行蒸发。
此工艺获得的膜层具有通透的底色，很好地解决膜层颜色偏黄的问题，适合于用来制造高端手机透光面盖，或其它半透装饰件。
以上所述的仅是本发明的优选实施方式，应当指出，对于本领域的普通技术人员来说，在不脱离本发明创造构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。

Claims (4)

1.一种电子元器件表面镀膜工艺，其特征在于，它包括以下步骤：
1）采用电子束蒸镀、溅射镀或热气流蒸镀的方式在清洗后的产品表面形成SiO2膜层；
2）调配镀膜材料铝和硅，质量配比为2:5；
3）将调配好的镀膜材料铝和硅放入真空镀膜设备真空室内的材料筐；
4）投入待镀膜产品，关真空室大门，对真空室进行抽真空，启动真空镀膜设备；
5）取出产品采用电子束蒸镀、溅射镀或热气流蒸镀的方式在镀有SiO2膜层的产品表面形成防 污膜层；
6）将产品放入真空镀膜室，启动真空室的半自动蒸发功能，；
7）开真空室大门并放入空气，取出产品。
2.根据权利要求1所述的电子元器件表面镀膜工艺，其特征在于：所述步骤6）中，将电压调至2.70V，进行时间为28s的预热阶段；将电压调至5.10V，进行时间为12s的预蒸发阶段；将电压调至8.85V，进行时间为8--12s的蒸发阶段。
3.根据权利要求1所述的电子元器件表面镀膜工艺，其特征在于：所述步骤3）中，真空室内抽真空后的真空度为2.0×10-2Pa。
4.根据权利要求3所述的电子元器件表面镀膜工艺，其特征在于：所述蒸发时间为10s。
CN201610617073.4A 2016-08-01 2016-08-01 一种电子元器件表面镀膜工艺 Withdrawn CN106011749A (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
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CN107620047A (zh) * 2017-08-25 2018-01-23 苏州安江源光电科技有限公司 一种用于pvd镀膜的反应腔室以及加工方法

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CN101665577A (zh) * 2008-09-03 2010-03-10 深圳富泰宏精密工业有限公司 塑料表面处理方法
CN104789929A (zh) * 2015-03-29 2015-07-22 安徽松泰包装材料有限公司 一种电膜层镀膜工艺
CN105463374A (zh) * 2015-12-04 2016-04-06 东莞市金世尊电子科技有限公司 真空镀膜工艺
US10329192B2 (en) * 2013-03-11 2019-06-25 Gaema Tech. Co., Ltd. Composition of fingerprint-resistant layer consisting of a plurality of thin films and preparation method therefor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101665577A (zh) * 2008-09-03 2010-03-10 深圳富泰宏精密工业有限公司 塑料表面处理方法
US10329192B2 (en) * 2013-03-11 2019-06-25 Gaema Tech. Co., Ltd. Composition of fingerprint-resistant layer consisting of a plurality of thin films and preparation method therefor
CN104789929A (zh) * 2015-03-29 2015-07-22 安徽松泰包装材料有限公司 一种电膜层镀膜工艺
CN105463374A (zh) * 2015-12-04 2016-04-06 东莞市金世尊电子科技有限公司 真空镀膜工艺

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107620047A (zh) * 2017-08-25 2018-01-23 苏州安江源光电科技有限公司 一种用于pvd镀膜的反应腔室以及加工方法

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