CN105993071B - 集成电路电阻器的热金属接地 - Google Patents

集成电路电阻器的热金属接地 Download PDF

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Publication number
CN105993071B
CN105993071B CN201580008191.9A CN201580008191A CN105993071B CN 105993071 B CN105993071 B CN 105993071B CN 201580008191 A CN201580008191 A CN 201580008191A CN 105993071 B CN105993071 B CN 105993071B
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CN
China
Prior art keywords
resistor
integrated circuit
metallic region
thermal
substrate
Prior art date
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CN201580008191.9A
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English (en)
Chinese (zh)
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CN105993071A (zh
Inventor
A·米特尔
A·L·S·洛克
M·塞迪
P·德雷南
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Qualcomm Inc
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Qualcomm Inc
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Publication of CN105993071A publication Critical patent/CN105993071A/zh
Application granted granted Critical
Publication of CN105993071B publication Critical patent/CN105993071B/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H10D1/474—Resistors having no potential barriers comprising refractory metals, transition metals, noble metals, metal compounds or metal alloys, e.g. silicides
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203—Cooling of mounted components
    • H05K1/0204—Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/01—Mounting; Supporting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/08—Cooling, heating or ventilating arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/08—Cooling, heating or ventilating arrangements
    • H01C1/084—Cooling, heating or ventilating arrangements using self-cooling, e.g. fins, heat sinks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/498—Resistive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H10W40/226—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area
    • H10W40/228—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area the projecting parts being wire-shaped or pin-shaped

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN201580008191.9A 2014-02-14 2015-02-09 集成电路电阻器的热金属接地 Active CN105993071B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/181,187 US9930769B2 (en) 2014-02-14 2014-02-14 Thermal metal ground for integrated circuit resistors
US14/181,187 2014-02-14
PCT/US2015/015041 WO2015123146A1 (en) 2014-02-14 2015-02-09 Thermal metal ground for integrated circuit resistors

Publications (2)

Publication Number Publication Date
CN105993071A CN105993071A (zh) 2016-10-05
CN105993071B true CN105993071B (zh) 2019-11-29

Family

ID=52577981

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580008191.9A Active CN105993071B (zh) 2014-02-14 2015-02-09 集成电路电阻器的热金属接地

Country Status (7)

Country Link
US (1) US9930769B2 (https=)
EP (1) EP3105785B1 (https=)
JP (1) JP6416272B2 (https=)
KR (1) KR101977674B1 (https=)
CN (1) CN105993071B (https=)
BR (1) BR112016018572B1 (https=)
WO (1) WO2015123146A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106416433B (zh) * 2014-05-22 2019-03-08 松下知识产权经营株式会社 电路基板
US10304772B2 (en) * 2017-05-19 2019-05-28 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with resistive element
US10290676B2 (en) * 2017-08-15 2019-05-14 Northrop Grumman Systems Corporation Superconducting device with thermally conductive heat sink
US10510637B2 (en) 2017-08-30 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Devices and methods for heat dissipation of semiconductor integrated circuits
US10475725B2 (en) 2017-11-08 2019-11-12 Texas Instruments Incorporated Structure to enable higher current density in integrated circuit resistor
US11004763B2 (en) 2018-12-20 2021-05-11 Northrop Grumman Systems Corporation Superconducting device with multiple thermal sinks
US11522118B2 (en) 2020-01-09 2022-12-06 Northrop Grumman Systems Corporation Superconductor structure with normal metal connection to a resistor and method of making the same
US11222849B2 (en) 2020-04-24 2022-01-11 Taiwan Semiconductor Manufacturing Company, Ltd. Substrate loss reduction for semiconductor devices

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1828877A (zh) * 2005-01-10 2006-09-06 国际商业机器公司 用于集成电路器件的热沉和热接口以及冷却电阻器的方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01214048A (ja) * 1988-02-23 1989-08-28 Fujitsu Ltd 半導体集積装置
JPH04249360A (ja) * 1991-02-05 1992-09-04 Nec Ic Microcomput Syst Ltd 半導体入力保護回路
JPH04249340A (ja) * 1991-02-05 1992-09-04 Canon Inc 半導体ウェハの位置合わせ方法
JPH09252084A (ja) * 1996-03-15 1997-09-22 Hitachi Ltd 半導体抵抗装置
JP3309907B2 (ja) * 1999-04-20 2002-07-29 日本電気株式会社 半導体装置及びその製造方法
US6838372B2 (en) * 2002-09-25 2005-01-04 Cookson Electronics, Inc. Via interconnect forming process and electronic component product thereof
US7345364B2 (en) 2004-02-04 2008-03-18 Agere Systems Inc. Structure and method for improved heat conduction for semiconductor devices
US7166913B2 (en) 2005-04-19 2007-01-23 International Business Machines Corporation Heat dissipation for heat generating element of semiconductor device and related method
JP5005241B2 (ja) * 2006-03-23 2012-08-22 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
US8013394B2 (en) 2007-03-28 2011-09-06 International Business Machines Corporation Integrated circuit having resistor between BEOL interconnect and FEOL structure and related method
US9111779B2 (en) 2008-08-07 2015-08-18 Texas Instruments Incorporated IC resistor formed with integral heatsinking structure
JP5589283B2 (ja) * 2009-01-30 2014-09-17 日本電気株式会社 配線基板及びその製造方法
DE112009005017T5 (de) 2009-06-29 2012-07-26 Fujitsu Limited Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung
US8048794B2 (en) * 2009-08-18 2011-11-01 International Business Machines Corporation 3D silicon-silicon die stack structure and method for fine pitch interconnection and vertical heat transport
US8053870B2 (en) 2009-12-15 2011-11-08 International Business Machines Corporation Semiconductor structure incorporating multiple nitride layers to improve thermal dissipation away from a device and a method of forming the structure
US8222745B2 (en) * 2010-01-19 2012-07-17 Lsi Corporation Integrated heat sink
JP2011249430A (ja) * 2010-05-24 2011-12-08 Panasonic Corp 半導体装置及び半導体装置の製造方法
US8848374B2 (en) 2010-06-30 2014-09-30 Taiwan Semiconductor Manufacturing Company, Ltd. Method and structure for dissipating heat away from a resistor having neighboring devices and interconnects
US8486796B2 (en) 2010-11-19 2013-07-16 International Business Machines Corporation Thin film resistors and methods of manufacture
US8652922B2 (en) * 2011-01-18 2014-02-18 International Business Machines Corporation Compact thermally controlled thin film resistors utilizing substrate contacts and methods of manufacture
US8530320B2 (en) * 2011-06-08 2013-09-10 International Business Machines Corporation High-nitrogen content metal resistor and method of forming same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1828877A (zh) * 2005-01-10 2006-09-06 国际商业机器公司 用于集成电路器件的热沉和热接口以及冷却电阻器的方法

Also Published As

Publication number Publication date
EP3105785A1 (en) 2016-12-21
CN105993071A (zh) 2016-10-05
US9930769B2 (en) 2018-03-27
US20150237709A1 (en) 2015-08-20
EP3105785B1 (en) 2017-11-22
BR112016018572A2 (https=) 2017-08-08
JP6416272B2 (ja) 2018-10-31
WO2015123146A1 (en) 2015-08-20
KR20160122177A (ko) 2016-10-21
JP2017506433A (ja) 2017-03-02
KR101977674B1 (ko) 2019-05-13
BR112016018572B1 (pt) 2022-04-26

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