CN105954826B - All dielectric ultra-thin two-dimension circular polarization dichroics and preparation method thereof - Google Patents
All dielectric ultra-thin two-dimension circular polarization dichroics and preparation method thereof Download PDFInfo
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- CN105954826B CN105954826B CN201610469385.5A CN201610469385A CN105954826B CN 105954826 B CN105954826 B CN 105954826B CN 201610469385 A CN201610469385 A CN 201610469385A CN 105954826 B CN105954826 B CN 105954826B
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
Abstract
The present invention provides a kind of all dielectric ultra-thin two-dimension circular polarization dichroics and preparation method thereof, the effect for directly generating circularly polarized light and differentiation left-right rotary circularly polarized light can be realized.The structure includes substrate and is covered in the Z-type through-hole etched on substrate in the dielectric layer；The polarizer of the present invention is average 70% or more in 1.50 μm of 1.61 mu m waveband circular dichroism, circular dichroism can reach 98.3% at 1.53 μm, and it is wider to have wave band, it is simple in structure, the characteristics of being easy to make, in optical sensor system afterwards, advanced nano-photon device and integrated optics system, there is prodigious application value.
Description
Technical field
The present invention relates to optical element technologies of preparing, and in particular to a kind of all dielectric ultra-thin two-dimension circular polarization dichroics
Design and preparation method thereof.
Background technology
In imaging technique, behaviour is obtained since polarization imaging technology can carry out remote image under rugged environment
Make, has in inhibit ambient noise, improve detection range, minutia acquisition and camouflage of target identification etc. absolutely excellent
Gesture.Therefore, with very extensive application, such as：The detectable target hidden or pretend；Sea and underwater mesh can be achieved
Target detects and identification；The navigation under the conditions of smog climatic environment can be achieved；Effective district parting belongs to and insulator or from luring
Real goal is distinguished in object；It can carry out the medical diagnosis such as cancer, burn；It can be to object features（Such as fingerprint）It is identified；It can
Realize spaceborne or aerial remote sensing；Can be also combined with other technologies, such as multispectral polarized ir imaging, ultraphotic spectrum polarized ir at
As etc..In polarised light imaging technique, circular polarization imaging is weighed extensively because of its unique advantage in bulky grain scattering medium
Depending on.Such as the image quality of circularly polarized light is better than linearly polarized light in the bottom, smog, cloud layer and biological tissue.
It is particularly important that the left-handed dextrorotation of circular polarization is distinguished in optical image technology.Tradition distinguishes the side of left-right rotary circularly polarized light
Method is usually circular polarization to be converted to quarter-wave plate the linearly polarized light in different polarization direction, then further according to required
Analyzer filtering is selected in polarization direction.However the applicable band-limited of this method in wave plate bandwidth and also be unfavorable for element
Miniaturization with it is integrated.In recent years, the sub-wavelength structure device containing surface plasma-wave and the technology subject emerging as one,
There are many potential applications in many fields, thus has been to be concerned by more and more people.Currently, many seminars receive in utilization
Rice micro-structure has done a large amount of research work in terms of distinguishing left-right rotary circularly polarized light.In terms of three-D space structure, 2009,
Justyna K. Gansel et al. are proposed and have been made a kind of circularly polarized light analyzer in broadband, i.e., the period in medium substrate
Property placement spiral metal gold thread, by control helix direction of rotation, it can be achieved that left-handed and right-circularly polarized light
Selectivity penetrate.First one layer of deposition is very thin on the glass substrate for they（25nm）Indium tin oxide（ITO）As electrochemistry
The cathode of deposition, is then coated with positive photoresist, is carved spiral of air line by 3D laser direct writing systems, places into containing gold
Gold is filled into gap using the method for electrochemical deposition in electrolyte, finally removes photoresist, obtains justifying two in 4um-8um
Color is mild-natured be 70% wideband circular polarization piece.This structural manufacturing process is complicated, it is difficult to make.2014, Wenshan Cai et al.
The double-deck curved metal (Ag) structure is designed and has made, circular arc-shaped metal knot is respectively set on the different step of height in they
Structure, and it is 35% experimentally to obtain maximum circular dichroism at 1.4um.2014, E.-B. Kley et al. made 2-D and 3-
D starfish appearance metals（Au）Structure, wherein three-dimensional structure obtain 40% circular dichroism at 660nm.However existing three dimensions knot
Structure complex process manufacture difficulty is larger, cannot be compatible with conventional lithographic techniques.2009, Qiwen Zhan et al. proposed one
The left-handed design method with right-circularly polarized light of kind detection, that is, utilize the spiral metal slit with sub-wavelength line width, to or so
Rounding polarised light forms different focal beam spots outside the exit facet of structure（Speck, blackening）It is inclined to distinguish left and right rounding
Shake light.However this structure can only distinguish left-right rotary circularly polarized light in pattern, discrimination is minimum on transmitance energy.
The prior art is there are structure discrimination is low, the shortcomings of effect wave band is narrow, and incompatible with conventional semiconductor processing.
Invention content
The object of the present invention is to provide a kind of design and fabrication method of all dielectric ultra-thin two-dimension circular polarization dichroics,
It can realize the differentiation to left-right rotary circularly polarized light, and it is wider to have a wave band, it is simple in structure, the characteristics of being easy to make.
To achieve the above object of the invention, the technical solution adopted by the present invention is：A kind of all dielectric ultra-thin two-dimension circular polarization two
Color device, is made of building block array；The structural unit includes light-transparent substrate and the dielectric layer that is covered in substrate；Institute
It states dielectric layer and is equipped with Z-type through-hole；The Z-type through-hole runs through the upper surface and lower surface of dielectric layer；The vertical arms of the Z-type through-hole
A length of 0.18 μm~0.24 μm, a length of 0.48 μm~0.54 μm of transverse arm, slit width is 0.30 μm~0.33 μm；The dielectric layer
Thickness is 0.20 μm~0.26 μm；In all dielectric ultra-thin two-dimension circular polarization dichroics, the period of each structural unit
It is 0.97 μm~1.00 μm.
In above-mentioned technical proposal, the light-transparent substrate includes silica light-transparent substrate material, and dielectric layer is silicon, germanium, arsenic
Change the semi-conducting materials such as gallium；Preferably, dielectric layer is silicon, and light-transparent substrate is silica.Manufacture craft is more mature, and valence
Lattice are cheap, are easy to obtain.
The invention also discloses a kind of all dielectric ultra-thin two-dimension circular polarization dichroics, are made of building block array；
The structural unit is Silicon-on-insulator；The top silicon layer of the Silicon-on-insulator of the Silicon-on-insulator is equipped with Z-type through-hole；It is described
Z-type through-hole is through the upper surface and lower surface of the top silicon layer of Silicon-on-insulator；A length of 0.18 μm of the vertical arms of the Z-type through-hole
~0.24 μm, a length of 0.48 μm~0.54 μm of transverse arm, slit width is 0.30 μm~0.33 μm；The thickness of the top silicon layer is
0.20 μm~0.26 μm；In all dielectric ultra-thin two-dimension circular polarization dichroics, the period of each structural unit is 0.97 μ
M~1.00 μm.Silicon-on-insulator is the combination of Si layers of+SiO2 middle layer+Si substrates, and according to position relationship, Si layers are top layer silicon
Layer, it is relatively thin.
In above-mentioned technical proposal, state when position relationship is practical application, for dielectric layer above light-transparent substrate, Z-type is logical
Hole etches in semiconductor medium layer, and Z-type through-hole cuts through dielectric layer during etching, and Z-type through-hole is above and below dielectric layer
Surface, therefore be through-hole, on the Z-type through-hole, the distance on arbitrary two sides is both less than the period of each structural unit, i.e. Z-type
Clear size of opening is less than the structural unit period, and through-hole is less than dielectric layer edge.Z-type through-hole is two-dimentional chiral structure, and hand structure is
Referring to the mirror image of itself can not overlap with itself, Z-type through-hole can have to incident left-right rotary circularly polarized light different absorptions,
Reflection and transmission effect, i.e. circular dichroism.Preferably, a length of 0.2 μm of the vertical arms of the Z-type through-hole, a length of 0.5 μ of transverse arm
M, slit width are 0.32 μm, dielectric layer（Top silicon layer）Thickness be 0.25 μm；The all dielectric ultra-thin two-dimension circular polarization dichroism
In device, the period of each structural unit is 0.98 μm.It is complete since medium is far smaller than metal for the absorption of incident light
Chiral Media structure can reach higher circular dichroism, circular dichroism 1.50 μm of -1.61 mu m waveband it is average 70% with
On, circular dichroism can reach 98.3% at 1.53 μm.
All dielectric ultra-thin two-dimension circular polarization dichroics disclosed by the invention have very strong circular dichroism, to realize
The function that circular polarization state is distinguished；Therefore the invention also discloses above-mentioned all dielectric ultra-thin two-dimension circular polarization dichroics to detect
Application in circularly polarized light.Its corresponding service band is communication band, and the service band can be according to structural parameters
Selection is modulated.
The present invention further discloses above-mentioned all dielectric ultra-thin two-dimension circular polarization dichroics preparation method, methods one：
First, layer of semiconductor dielectric layer is grown on substrate using chemical vapour deposition technique；Then photoetching process is utilized, for example is applied
Last layer photoresist carves photoresist structure using electron beam exposure developing technique, reuses reactive ion beam technique etching half
Conductive medium layer then removes residual photoresist and obtains all dielectric ultra-thin two-dimension circular polarization dichroics.Method two：It is using
After chemical vapour deposition technique grows semiconductor medium layer, circular polarization is directly obtained using focused-ion-beam lithography technique and is polarized
Device.Focused ion beam direct-write process or photoetching process can also be utilized to prepare Z-type in the top silicon layer of Silicon-on-insulator logical
Hole is to get to all dielectric ultra-thin two-dimension circular polarization dichroics.Using e-beam direct-writing exposure and develop；Use reactive ion beam
Etch photoresist；Residual photoresist is removed using acetone.
Since above-mentioned technical proposal is used, the present invention has following advantages compared with prior art:
1. present invention firstly discloses all dielectric ultra-thin two-dimension circular polarization dichroics, there is very strong circular dichroism,
To realize the function of circular polarization state differentiation, circular dichroism is average 70% or more in 1.50 μm of -1.61 mu m waveband, 1.53
Circular dichroism can reach 98.3% at μm, achieve unexpected technique effect.
2. all dielectric ultra-thin two-dimension circular polarization dichroics disclosed in this invention are reasonable for structure, are easy to make, Z-type is logical
The dimensional parameters in hole are adjustable, and preparation method and existing semiconductor fabrication process are completely compatible；It is numerous to overcome prior art needs
Trivial preparation process can just obtain the defect of analyzer.
3. all dielectric ultra-thin two-dimension circular polarization dichroics raw material sources disclosed by the invention are wide, it is simple to prepare, compare
Prior art financial resources, time cost are lower；And have excellent performance, optical sensor system, advanced nano-photon device and
In integrated optics system, there is prodigious application value.
Description of the drawings
Fig. 1 is all dielectric ultra-thin two-dimension circular polarization dichroics of the present invention and structural unit schematic diagram；
Wherein：1, transparent substrates；2, dielectric layer；3, Z-type through-hole；
Fig. 2 is all dielectric ultra-thin two-dimension circular polarization dichroics structural unit main structure diagram of embodiment one；
Fig. 3 is all dielectric ultra-thin two-dimension circular polarization dichroics structural unit overlooking structure diagram of embodiment one；
Fig. 4 is that left-right rotary circularly polarized light passes through all dielectric ultra-thin two-dimension circular polarization dichroism by substrate incident in embodiment one
The transmittance curve figure of device；
Fig. 5 is that left-right rotary circularly polarized light passes through all dielectric ultra-thin two-dimension circular polarization dichroism by substrate incident in embodiment one
The circular dichroism curve graph of device；
Fig. 6 is that left-right rotary circularly polarized light passes through all dielectric ultra-thin two-dimension circular polarization dichroism by substrate incident in embodiment two
The transmittance curve figure of device；
Fig. 7 is that left-right rotary circularly polarized light passes through all dielectric ultra-thin two-dimension circular polarization dichroism by substrate incident in embodiment two
The circular dichroism curve graph of device；
Fig. 8 is that left-right rotary circularly polarized light passes through all dielectric ultra-thin two-dimension circular polarization dichroism by substrate incident in embodiment three
The transmittance curve figure of device；
Fig. 9 is that left-right rotary circularly polarized light passes through all dielectric ultra-thin two-dimension circular polarization dichroism by substrate incident in embodiment three
The circular dichroism curve graph of device；
Figure 10 is that left-right rotary circularly polarized light passes through two color of all dielectric ultra-thin two-dimension circular polarization by substrate incident in example IV
The transmittance curve figure of property device；
Figure 11 is that left-right rotary circularly polarized light passes through two color of all dielectric ultra-thin two-dimension circular polarization by substrate incident in example IV
The circular dichroism curve graph of property device.
Specific implementation mode
With reference to embodiment, attached drawing, the invention will be further described:
Shown in attached drawing 1, all dielectric ultra-thin two-dimension circular polarization dichroics of the invention are by building block array group
At；The structural unit includes light-transparent substrate 1 and the dielectric layer 2 that is covered in substrate；The dielectric layer is equipped with Z-type through-hole 3；It is more
A building block array combination obtains all dielectric ultra-thin two-dimension circular polarization dichroics.
Embodiment one
It is all dielectric ultra-thin two-dimension circular polarization dichroics structural unit main structure diagram referring to attached drawing 2, wherein
The thickness H of semiconductor medium layer silicon is 0.25 μm；Referring to attached drawing 3, overlooked for all dielectric ultra-thin two-dimension circular polarization dichroics
Structural schematic diagram, wherein the longitudinal brachium L1 for etching Z-type through-hole in the dielectric layer is 0.2 μm, lateral brachium L2 is 0.5 μm,
Slit width W is 0.32 μm, and the period P of each structural unit is 0.98 μm.
Attached drawing 4 is that left-right rotary circularly polarized light passes through above-mentioned all dielectric ultra-thin two-dimension circular polarization two by silica substrate incident
The transmittance curve figure of color device；Attached drawing 5 is the circular dichroism curve graph of all dielectric ultra-thin two-dimension circular polarization dichroics.
It is shown in Figure 4, the transmitance height of left-right rotary circularly polarized light is had differences in 1.50 μm of -1.61 mu m waveband structure.Referring to
It is average 70% or more in 1.50 μm of -1.61 mu m waveband circular dichroism shown in Fig. 5.
The production method of above-mentioned all dielectric ultra-thin two-dimension circular polarization dichroics, includes the following steps：
（1）One layer of silicon semiconductor dielectric layer is grown in silicon dioxide substrates using chemical vapour deposition technique；
（2）A layer photoresist is coated, " Z " photoresist structure is carved using electron beam lithography；
（3）Use reactive ion beam technique etching semiconductor dielectric layer；
（4）Acetone removal residual photoresist obtains all dielectric ultra-thin two-dimension circular polarization dichroics.
Embodiment two
Substrate is silica in the present embodiment, and semiconductor medium layer is silicon；The thickness of semiconductor medium layer is the μ of H=0.23
Longitudinal brachium L1 of m, Z-type through-hole are 0.2 μm, and lateral brachium L2 is 0.5 μm, and slit width is 0.32 μm, the week of each structural unit
Phase is 0.98 μm.After growing semiconductor medium layer using chemical vapour deposition technique, focused-ion-beam lithography is directly used
Technique obtains the circular polarization polarizer.
Attached drawing 6 is that left-right rotary circularly polarized light passes through above-mentioned all dielectric ultra-thin two-dimension circular polarization two by silica substrate incident
The transmittance curve figure of color device；Attached drawing 7 is the circular dichroism curve graph of all dielectric ultra-thin two-dimension circular polarization dichroics.
Shown in Figure 6, in transmitance height of 1.48 μm of -1.54 mu m waveband structure to left-right rotary circularly polarized light, there are larger differences.
It is shown in Figure 7,1.53 μm at circular dichroism highest average 80% or more in 1.48 μm of -1.54 mu m waveband circular dichroism
It can reach 98.3%.
Embodiment three
The preparation process of the present embodiment is consistent with embodiment one, and wherein substrate is silica, and semiconductor medium layer is arsenic
Change gallium；Longitudinal brachium L1 of Z-type through-hole is 0.2 μm, and lateral brachium L2 is 0.5 μm, and slit width is 0.32 μm, the thickness H of dielectric layer
For：0.25μm.The period of each structural unit is 0.98 μm.
Attached drawing 8 is that left-right rotary circularly polarized light passes through above-mentioned all dielectric ultra-thin two-dimension circular polarization two by silica substrate incident
The transmittance curve figure of color device；Attached drawing 9 is the circular dichroism curve graph of all dielectric ultra-thin two-dimension circular polarization dichroics.
Shown in Figure 8, in transmitance of 1.46 μm of -1.56 mu m waveband structure to left-right rotary circularly polarized light, there are larger differences.Referring to
It is average 70% or more in 1.46 μm of -1.56 mu m waveband circular dichroism shown in Fig. 9.
Example IV
Prepared by the present embodiment selects commercial Silicon-on-insulator, and top layer silicon thickness is 0.22 μm, and middle layer silica is thick
Degree is 3.0 μm, and bottom silicon degree is 675 μm.For Z-type via etch in top layer silicon, longitudinal brachium L1 of Z-type through-hole is 0.2 μm, horizontal
It it is 0.5 μm to brachium L2, slit width is 0.32 μm, and the thickness H of dielectric layer is：0.22μm.The period of each structural unit is 0.98 μ
m。
Attached drawing 10 is that left-right rotary circularly polarized light passes through above-mentioned all dielectric ultra-thin two-dimension circular polarization dichroism by silicon base incidence
The transmittance curve figure of device；Attached drawing 11 is the circular dichroism curve graph of all dielectric ultra-thin two-dimension circular polarization dichroics.Ginseng
As shown in Figure 10, there are larger differences for the transmitance in 1.45 μm of -1.51 mu m waveband structure to left-right rotary circularly polarized light.Referring to
It is average 70% or more in 1.45 μm of -1.51 mu m waveband circular dichroism shown in Figure 11.
Claims (5)
1. a kind of all dielectric ultra-thin two-dimension circular polarization dichroics, it is characterised in that：The all dielectric ultra-thin two-dimension circular polarization
Dichroics are made of building block array；The structural unit includes light-transparent substrate and the medium that is covered in light-transparent substrate
Layer；The dielectric layer is equipped with Z-type through-hole；The Z-type through-hole runs through the upper surface and lower surface of dielectric layer；The Z-type through-hole
A length of 0.18 μm~0.24 μm of vertical arms, a length of 0.48 μm~0.54 μm of transverse arm, slit width are 0.30 μm~0.33 μm；It is given an account of
The thickness of matter layer is 0.23 μm~0.26 μm；In all dielectric ultra-thin two-dimension circular polarization dichroics, each structural unit
Period be 0.97 μm~1.00 μm；The dielectric layer includes silicon dielectric layer, indium arsenide dielectric layer or GaAs dielectric layer.
2. all dielectric ultra-thin two-dimension circular polarization dichroics according to claim 1, it is characterised in that：The Z-type through-hole
On, the distance on arbitrary two sides is both less than the period of each structural unit.
3. all dielectric ultra-thin two-dimension circular polarization dichroics according to claim 1, it is characterised in that：The Z-type through-hole
A length of 0.2 μm of vertical arms, a length of 0.5 μm of transverse arm, slit width is 0.32 μm, and the thickness of dielectric layer is 0.25 μm；Full Jie
In matter ultra-thin two-dimension circular polarization dichroics, the period of each structural unit is 0.98 μm.
4. a kind of all dielectric ultra-thin two-dimension circular polarization dichroics, it is characterised in that：The all dielectric ultra-thin two-dimension circular polarization
Dichroics are made of building block array；The structural unit is Silicon-on-insulator；The top layer silicon of the Silicon-on-insulator
Layer is equipped with Z-type through-hole；The Z-type through-hole is through the upper surface and lower surface of the top silicon layer of Silicon-on-insulator；The insulator
The thickness of the top silicon layer of silicon chip is 0.25 μm；A length of 0.2 μm of the vertical arms of the Z-type through-hole, a length of 0.5 μm of transverse arm, seam
Width is 0.32 μm；In all dielectric ultra-thin two-dimension circular polarization dichroics, the period of each structural unit is 0.98 μm.
5. the application of claim 1 or the 4 all dielectric ultra-thin two-dimension circular polarization dichroics in detecting circularly polarized light.
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| CN106154388B (en) * | 2016-08-29 | 2018-07-20 | 苏州大学 | The full Stokes imaging polarization device of all dielectric pixel type |
| CN106395738B (en) * | 2016-11-10 | 2018-09-25 | 陕西师范大学 | Adjustable chiral nanostructure of a kind of circular dichroism and preparation method thereof |
| CN108549126B (en) * | 2018-04-28 | 2021-04-06 | 厦门呈昱实业有限公司 | Nano-film for enhancing asymmetric transmission and preparation method thereof |
| CN108549165A (en) * | 2018-04-28 | 2018-09-18 | 西安柯莱特信息科技有限公司 | A kind of Saint Andrew's cross shape optical polarizator and its adjusting method |
| CN110007387A (en) * | 2019-04-24 | 2019-07-12 | 金华伏安光电科技有限公司 | A kind of optical texture enhancing circularly polarized light circular dichroism |
| CN111624694B (en) * | 2020-05-19 | 2022-04-22 | 惠州市富丽电子有限公司 | Full-automatic production process of polaroid for hole-digging full-face screen |
| CN111948750B (en) * | 2020-09-02 | 2022-05-13 | 北京理工大学 | Metamaterial polarization conversion device with chiral optical activity |
| CN112305659B (en) * | 2020-10-13 | 2022-06-17 | 东北石油大学 | Broadband quarter-wave plate based on single-layer anisotropic metamaterial |
| CN112881302A (en) * | 2021-01-25 | 2021-06-01 | 中国科学院上海光学精密机械研究所 | Chiral symmetric structure super-surface circularly polarized light detection element and preparation method thereof |
| CN113589418B (en) * | 2021-08-03 | 2023-03-31 | 上海理工大学 | Circular polarization detection integrated device based on bionics and manufacturing method thereof |
| CN114265140B (en) * | 2021-12-02 | 2023-10-10 | 中国科学院上海光学精密机械研究所 | Super-surface circular polarization device |
| CN114609763B (en) * | 2022-02-25 | 2022-12-23 | 中国科学院西安光学精密机械研究所 | Miniaturized optical lens, imaging device and portable terminal |
| CN114609717B (en) * | 2022-03-21 | 2023-05-02 | 大连理工大学 | Single-layer transmission type circular polarizer suitable for visible light wave band |
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| JPWO2014030533A1 (en) * | 2012-08-24 | 2016-07-28 | 国立大学法人 奈良先端科学技術大学院大学 | Method for producing circularly polarizing body and circularly polarizing body |
| CN104316988A (en) * | 2014-11-17 | 2015-01-28 | 中国人民解放军国防科学技术大学 | Single-layer planar chirality metal structure circular polarizer |
| CN104865628A (en) * | 2015-06-02 | 2015-08-26 | 中国科学院上海技术物理研究所 | Spiral-like metal chiral metamaterial circular polarizer |
| CN105161857B (en) * | 2015-08-03 | 2018-10-12 | 欧阳征标 | A kind of meta-material thin film of Left-hand circular polarization conversion |
| CN205749968U (en) * | 2016-06-25 | 2016-11-30 | 苏州大学 | All dielectric ultra-thin two-dimension circular polarization dichroics |
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