CN104865628A - Spiral-like metal chiral metamaterial circular polarizer - Google Patents
Spiral-like metal chiral metamaterial circular polarizer Download PDFInfo
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
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- G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
Abstract
The invention discloses a spiral-like metal chiral metamaterial circular polarizer, which comprises a substrate, a transparent dielectric space layer firmly combined with the substrate and a spiral-like metal chiral micro structure array embedded in the transparent dielectric space layer, wherein the micro structure array comprises N periodically-arranged micro structure units, and N is more than 1 but no more than 106; the micro structure unit comprises m vertically-stacked metal arcs with the same size and with an angle of theta, the metal arcs are arranged rotarily around the same center, upper-layer metal arcs rotate for an angle of theta in relative to lower-layer metal arcs, theta is no less than 10 DEG but no more than 180 DEG, m is no less than 360/theta+1 but no more than 10, and tail ends of the upper-layer metal arcs and the lower-layer metal arcs are connected via metal cylinders to form a spiral-like shape. Compared with the traditional circular polarizer, the size is small, the waveband is wide, the extinction ratio is high, manufacturing of a micro circular polarization array can be realized, integration with a linear polarization structure uniwafer is even realized, a core polarization device is provided for full-Stokes vector real-time polarization imaging, and the spiral-like metal chiral metamaterial circular polarizer can be applied to fields such as polarization imaging detection, display and laser.
Description
Technical field
The present invention relates to a kind of circuit polarizer, be specifically related to a kind spiral metal chirality Meta Materials circuit polarizer.
Background technology
The polarization information of the object that polarization imaging technology can provide actinometry not provide on the one hand and material, has the accuracy higher than actinometry on the other hand.Polarization image is utilized equally with gray level image to distinguish and characteristic present natural target, exploitation in weather environment scientific research, ocean, space exploration, biomedicine and military etc. in all have important application, be a kind of new information analysis means, there is the advantage not available for a lot of classic method.
Human eye and the common detector are all " polarization are blind ", and when helping without any ancillary technique, human eye and detector are can not the information of direct " perception " polarization.Scenic focal point Object light wave polarization state carries out decomposing, scan and the polarization optical element of angular coding is core devices in Polarization Detection imaging system, is the key realizing Polarization Detection.The state of general employing Stocks vector to polarized light is described, full Stokes vector real-time polarization detection the liner polarization and circular polarization sets of elements of different directions is helped Stocks surpass Polarization Detection cell array, the integrated formation full Stokes vector polarization detector with detector array again, thus the detection that can simultaneously realize different directions circular polarization and linear polarization information, compared to traditional discrete Polarization Detection technology, not only system is compacter, stability and reliability higher, and real-time detection that discrete Polarization Detection technology cannot realize and dynamic object detection can be realized, therefore the advanced form of Polarization Detection is considered to.At present, adopt sub-wavelength metal polarization grating array and the integrated linear polarization detector of the integrated formation of detector array to have relevant report, the full Stokes integrated polarizing detector of integrated linear polarization element and circular polarization element then rarely has report simultaneously.
At present, utilize linear polarizer and quarter-wave plate to be modal realization and regulate and control circularly polarized light method.But such device must converge the input and output light through linear polarizer and collimate in use, accurate aligning when linear polarizer and quarter-wave plate are interconnected to be ensured simultaneously; System is made up of discrete device, not only make whole system loss greatly increase, and the instability of system also increases greatly, and volume is also comparatively large, integrated difficulty; Quarter-wave plate operating wavelength range is narrower, cannot obtain the circularly polarized light of wide wavelength coverage.It is crucial that cannot with linear polarization structure single-chip integration, common form the polarization arrays device that can realize the detection of full Stokes vector.
Utilize the chiral structure of the electrically conerolled birefringence characteristic of cholesteric liquid crystal and spiral fashion optical fiber also can obtain and regulate and control circularly polarized light, but be subject to the restriction of cholesteric crystal material and spiral fashion optical fiber self performance, the working range of these two kinds of circuit polarizers is also all narrower, significantly limit its application.Not only incompatible with the preparation technology of linear polarization monolithic device, and suitable working range will be obtained, need to increase the spiral number of turns, thus cause that device is too thick to be difficult to integrated, therefore, also cannot become the polarization arrays device of full Stokes vector detection.
Chirality Meta Materials is the artificial metamaterial of a class symmetry disappearance, research finds, the circular dichroism (namely having different responses to left-handed and right-circularly polarized light) of chirality Meta Materials can exceed the several order of magnitude of natural material, and thus chirality Meta Materials starts to be subject to extensive concern as a kind of novel circuit polarizer candidate.
In September, 2009, first the researchist of Karlsruhe, Germany university proposes to adopt Au spiral chirality Meta Materials to obtain broadband circularly polarized light, working range is at 3.5 μm-6.5 μm, see Justyna K.Ganselet.al.Circle Polarizer Gold Helix Photonic Metamaterial as Broadband, Science325,1513 (2009).The method that they prepare first adopts laser beam direct writing technology to carry out sun to photoresist to carve, and subsequently by the method for electrochemical deposition, golden uniform deposition in spiral-like air gap, removes photoresist completely subsequently thus the gold thread grid of acquisition monotonous helical shape.Compared with classic method, adopt this helical structure service band wide, but be excited the restriction of light beam focal beam spot size, be difficult to prepare nano-scale device.And, this preparation process complex process, particularly the straight writing rate of laser beam is slow, not only be difficult to realize extensive preparation, and the circular polarization structure that laser direct writing method is formed is difficult to realize single-chip integration with other linear polarization structures, common formation can carry out the array device of full Stokes vector real-time polarization detection.
Summary of the invention
The object of the invention is to proposition one kind spiral metal chirality Meta Materials circuit polarizer, solve traditional round polarizer operating wavelength range narrow, be difficult to the problem forming full Stokes vector Polarization Detection device with other linear polarization structure single-chip integration.
Class spiral metal chirality Meta Materials circuit polarizer of the present invention, its structure is: be followed successively by from down to up in substrate 1 front and the transparent medium wall 2 of substrate strong bonded and the class spiral metal chirality micro structure array 3 be embedded in transparent medium wall.
The material of described substrate 1 is fused silica glass or K9 glass or ZK6 glass or BAK Glass optical glass or jewel or silicon chip or germanium wafer;
The material of described transparent medium wall 2 is the SiO being applicable to vacuum coating or the growth of magnetron sputtering membrane process
2or SiO or MgO or Al
2o
3or MgF
2or ZnS.
Described micro structure array 3 comprises the microstructure unit of N number of arrangement in cyclic array, 1 < N≤10
6; Microstructure unit comprises m stacked on top part metals circular arc, the size of each metal circular arc is with to comprise angle θ identical, arrangement is rotated around same central shaft, upper strata metal circular arc comparatively lower metal circular arc rotates θ angle, 10 °≤θ≤180 °, and meet 360/ θ+1≤m≤10, the end composition class spirality of upper/lower layer metallic circular arc is connected through metal cylinder; Described metal circular arc and the material of cylinder are Au or Ag or Cu or Pt or Al with surface plasma body resonant vibration characteristic, and the material of each metal circular arc and cylinder is same metal material or metal material not of the same race.When selected metal material and transparent medium wall adhesiveness poor time, need to plate thin Ti or the Cr metal bonding coating of one deck at metal arc or metal column and transparent medium wall.The unit size of metal chiral micro structure array 3 is: x and the y direction cycle is p=n* (200 ~ 220) nm, spacer thickness d=n* (45 ~ 55) nm between two-layer, metal circular arc radius r=n* (75 ~ 80) nm, width w=n* (15 ~ 25) nm, external diameter r
o=r+w/2nm, internal diameter r
i=r-w/2nm, thickness t=n* (30 ~ 40) nm, metal arc and to be all coated with thickness between metal column and dielectric distance layer be t
bthe tack coat of=0 ~ 20nm.Wherein, p > 2*r
o, the span of n is 1≤n≤10.
The ultimate principle of class spiral metal chirality Meta Materials circuit polarizer of the present invention is: for class helical structure, only have when the polarised direction of incident electromagnetic wave is mated with the rotation direction of spiral (such as left circularly polarized light and left-turn spiral), just can produce stronger induction current on helix, and electric current transmits in helix with the form of standing wave, incident light can not be through by helix " reception "; Otherwise when the unmatched circularly polarized light of polarised direction is incident, the electric current that helix produces is then very faint, almost negligible, and most of incident light can through device.Like this by the rotation direction of adjustment class helical structure, class spiral chirality metal Meta Materials circuit polarizer just achieve to the selectivity of left-right rotary circularly polarized light through.The wide service band of device then comes from the particular design of structure and size, each metal openings arc can regard a small resonance electromagnetic body as, under the induction of coupling circular polarization incident light field, circular arc can produce ring-like and electric current that is oscillation mode, the magnetic field of local is caused to strengthen, produce electromagentic resonance, will produce a sharp-pointed resonance peak like this on frequency spectrum, wavelength place, resonance peak place will present lower transmitance.The number of plies increases, and just there will be multiple sharp-pointed resonance peak, and the resonant positions of different directions circular arc is different, and it is lower that internal resonance peak mutually overlapping will form a transmitance, the polarization forbidden band that wave band is wider.And the class spiral in a longitudinal cycle can be regarded a hand as and levies crystal, when the pulsed light in broadband incides on crystal, due to Bragg reflection, will produce the sharp-pointed resonance peak of another one on frequency spectrum.Therefore, when circuit polarizer comprises number of stories m >=360/ θ+1 (θ is that metal arc comprises angle), internal resonance peak and Prague resonance peak can occur simultaneously, thus the polarization forbidden band that overlapping formation one is wider, obtain wide service band.Comprise the number of plies more, then to the circularly polarized light of rotation direction coupling through inhibiting effect stronger, thus higher extinction ratio can be obtained.Physical dimension increases, then corresponding resonant wavelength red shift, service band is red shift thereupon also.
Advantage of the present invention is:
1, class spiral metal chirality Meta Materials circuit polarizer can obtain overlapping internal resonance peak and Prague resonance peak due to special structural design simultaneously, a wide polarization forbidden band is existed to left-handed (or dextrorotation) circularly polarized light, to dextrorotation (or left-handed) circularly polarized light then optical clear, therefore wide service band can be obtained.
2, the discrete circular polarization device formed compared to linear polarizer and quarter-wave plate and the chiral structure such as electrically conerolled birefringence characteristic or spiral fashion optical fiber of cholesteric liquid crystal, class spiral metal chirality Meta Materials circular polarization volume is little, stability and reliability high, and integrated level is high, the preparation of single-slice integrated micro circular polarization array can be realized.
3, class spiral metal chirality Meta Materials circuit polarizer can adopt direct electronic beam writing technology to complete device preparation, compared to the metal spiral circuit polarizer adopting laser beam directly to write preparation, not only can realize preparation that is visible, near-infrared band device, and it is good with preparation technology's compatibility of linear polarization device, the inclined structure single-chip integration with line can be realized, thus provide core optical device for full Stokes vector real-time polarization imaging detection.
Accompanying drawing explanation
Fig. 1 is the schematic perspective view of class spiral chirality metal Meta Materials circuit polarizer.
Fig. 2 (a) is the cellular construction schematic diagram of class spiral chirality metal Meta Materials; Fig. 2 (b) is the cellular construction vertical view of class spiral chirality metal Meta Materials.
Fig. 3 is preparation technology's process flow diagram of class spiral chirality metal Meta Materials, a () substrate prepares, (b) electron beam evaporation plating transparent dielectric layer, c () electron-beam direct writing goes out circular arc figure, (d) etching transparent dielectric layer, (e) electron beam evaporation plating, f () is peeled off to remove photoresist and is prepared first layer metal arc, (g) electron beam evaporation plating transparent dielectric layer, h () electron-beam direct writing goes out cylinder figure, (i) electron beam evaporation plating, j () is peeled off to remove photoresist and is prepared first layer metal cylinder, k () completes each layer preparation of residue.
Fig. 4 is the left circularly polarized light (LCP) of class spiral chirality metal Meta Materials circuit polarizer in embodiment 1 and right-circularly polarized light (RCP) transmitance and extinction ratio curve.
Fig. 5 is the left circularly polarized light (LCP) of class spiral chirality metal Meta Materials circuit polarizer in embodiment 2 and right-circularly polarized light (RCP) transmitance and extinction ratio curve.
Fig. 6 is the left circularly polarized light (LCP) of class spiral chirality metal Meta Materials circuit polarizer in embodiment 3 and right-circularly polarized light (RCP) transmitance and extinction ratio curve.
Fig. 7 is the left circularly polarized light (LCP) of class spiral chirality metal Meta Materials circuit polarizer in embodiment 4 and right-circularly polarized light (RCP) transmitance and extinction ratio curve.
Embodiment
For convenience of explanation, below by for be operated in infrared band four layers of left-handed class spiral chirality metal Meta Materials circuit polarizer, by reference to the accompanying drawings the specific embodiment of the present invention is elaborated:
As depicted in figs. 1 and 2, class spiral chirality metal Meta Materials circuit polarizer of the present invention, is followed successively by from down to up in substrate 1 front and the transparent medium wall 2 of substrate strong bonded and the class spiral metal chirality micro structure array 3 be embedded in transparent medium wall.Micro structure array 3 comprises the microstructure unit of N number of arrangement in cyclic array, 1 < N≤10
6, microstructure unit comprises four stacked on top and comprises the Au circular arc that angle is θ, be respectively ground floor Au arc 311, second layer Au arc 312, third layer Au arc 313 and the 4th layer of Au arc 314, each Au arc size is identical with interval height all identical, and rotate arrangement around same central shaft, upper strata Au circular arc comparatively lower floor Au circular arc turns clockwise θ angle, the head end of lower floor Au arc end and adjacent upper strata Au arc (is respectively ground floor Au post 321 respectively by the Au cylinder that a diameter is Au arc width, second layer Au post 322 and third layer Au post 323) be connected to form class spirality up and down, plan structure unit is a complete circle arc shape, and the 4th layer of Au arc 314 is overlapping with ground floor Au arc 311.
As shown in Figure 3, the concrete preparation process of class spiral chirality metal Meta Materials circuit polarizer of the present invention is as follows:
1, the first metal pair quasi-mark of deposition 50 ~ 150nm on silicon substrate, then depositing a layer thickness by electron beam evaporation process according to design size is d+t+t
bsiO film;
2, PMMA or the ZAP electron sensitive resist of even etch thicknesses needed for spin coating 1.2 ~ 3 times on the film obtained in step 1, form ground floor partial arc glue pattern by electron beam exposure technique, adopting ICP etching technics to etch away thickness is subsequently t+t
bsiO, by Graphic transitions on SiO wall.Be t by electron beam evaporation process successively deposit thickness
bti tack coat and thickness be the Au of t, peel off the preparation of ground floor Au arc of having removed photoresist;
3, the structure obtained in step 2 adopts electron beam evaporation process deposit thickness be the SiO film of d, PMMA or the ZAP electron sensitive resist of etch thicknesses needed for even spin coating 1.2 ~ 3 times, forms second layer connecting cylinder figure by electron beam exposure technique alignment.Be t by electron beam evaporation process successively deposit thickness
bti and thickness be the Au of d, peel off the preparation of the Au connecting cylinder between ground floor and the second layer of having removed photoresist.Subsequently, electron beam evaporation process deposit thickness is adopted to be t+t
bsiO film;
4, in the structure obtained in step 3, repeat step 2 and step 3, complete its excess-three layer Au arc is connected Au post preparation with interlayer, acquisition class spiral chirality metal Meta Materials circuit polarizer.
Embodiment one
See Fig. 2, the class spiral chirality metal Meta Materials circuit polarizer of the present embodiment comprise K
9glass substrate 1, with the SiO of substrate strong bonded
2wall 2 and be embedded in SiO
2four layers of class spiral aluminium micro structure array 3 in wall.X and the y direction cycle is p=200nm, space layer d=45nm between two-layer, and four stacked on top comprise the part aluminium circular arc that angle is 120 °, and each aluminium arc size is identical with interval height is internal diameter r
i=57nm, external diameter r
o=93nm, thickness t=35nm, and rotate arrangement around same central shaft, upper strata aluminium arc comparatively lower floor's aluminium arc turns clockwise 120 °, and the head end of lower floor's aluminium arc end and adjacent upper strata aluminium arc is by a radius r
cthe aluminium cylinder of=18nm is connected to form class spirality up and down; Plan structure unit is a complete circle arc shape, and the 4th layer of aluminium arc is overlapping with ground floor aluminium arc, aluminium arc and be all coated with the Ti tack coat of 5nm between aluminium post and dielectric distance layer.
The concrete method for making of above-mentioned class spiral chirality metal Meta Materials circuit polarizer, comprises the following steps:
1. in K9 glass substrate, first deposit the metal pair quasi-mark of 100nm, then deposit the thick SiO of 85nm by electron beam evaporation process
2film.
2. on the film obtained in step 1, the PMMA electron sensitive resist of even spin coating 100nm, forms ground floor partial arc glue pattern by electron beam exposure technique, adopts ICP etching technics to etch away the SiO of 40nm subsequently
2, by Graphic transitions to SiO
2on wall.Deposit 5nmTi tack coat and 35nm Au successively by electron beam evaporation process, peel off the preparation of the ground floor Au arc that removed photoresist.
3. the structure obtained in step 2 adopt electron beam evaporation process deposit the thick SiO of 45nm
2film, the PMMA electron sensitive resist of even spin coating 100nm, forms second layer connecting cylinder figure by electron beam exposure technique alignment.Deposit 5nm Ti and 40nm Al successively by electron beam evaporation process, peel off the preparation of the Al connecting cylinder between ground floor and the second layer of having removed photoresist.Subsequently, the SiO that electron beam evaporation process deposition 40nm is thick is adopted
2film.
4. in the structure obtained in step 3, repeat step 2 and step 3, complete all the other 3 layers of Al arcs are connected Al post preparation with interlayer, acquisition class spiral chirality metal Meta Materials circuit polarizer.
Fig. 4 is the transmission spectrum of class spiral hand-type round metal polarizer described in the present embodiment, in figure, solid squares curve represents the transmitance of left circularly polarized light, hollow circular curve represents the transmitance of right-circularly polarized light, the operating wavelength range of the present embodiment is: 1.2 μm-2.2 μm, right-circularly polarized light maximum transmission 65.3%, maximum extinction ratio 7.8:1.
Embodiment two
See Fig. 2, the class spiral chirality metal Meta Materials circuit polarizer of the present embodiment comprise silicon substrate 1, with the SiO wall 2 of substrate strong bonded and four layers of class spiral metal chirality micro structure array 3 being embedded in SiO wall.X and the y direction cycle is p=1280nm, space layer d=360nm between two-layer, and four stacked on top comprise the part Au circular arc that angle is 120 °, and each Au arc size is identical with interval height is internal diameter r
i=464nm, external diameter r
o=604nm, thickness t=200nm, and rotate arrangement around same central shaft, upper strata Au circular arc comparatively lower floor Au circular arc turns clockwise 120 °, and the head end of lower floor Au arc end and adjacent upper strata Au arc is by a radius r
cthe Au cylinder of=120nm is connected to form class spirality up and down; Plan structure unit is a complete circle arc shape, and the 4th layer of Au arc is overlapping with ground floor Au arc, Au arc and be all coated with the Cr tack coat of 20nm between Au post and dielectric distance layer.
The method for making of above-mentioned class spiral chirality metal Meta Materials circuit polarizer, comprises the following steps:
1. deposit the metal pair quasi-mark of 100nm first on a si substrate, then deposit the thick SiO film of 550nm by electron beam evaporation process.
2. on the film obtained in step 1, the PMMA electron sensitive resist of even spin coating 300nm, forms ground floor partial arc glue pattern by electron beam exposure technique, adopts ICP etching technics to etch away the SiO of 220nm, by Graphic transitions on SiO wall subsequently.Deposit 20nm Cr tack coat and 200nm Au successively by electron beam evaporation process, peel off the preparation of the ground floor Au arc that removed photoresist.
3. the structure obtained in step 2 adopts electron beam evaporation process deposit the thick SiO film of 360nm, the ZAP electron sensitive resist of even spin coating 500nm, form second layer connecting cylinder figure by electron beam exposure technique alignment.Deposit 20nm Cr and 340nm Au successively by electron beam evaporation process, peel off the preparation of the Au connecting cylinder between ground floor and the second layer of having removed photoresist.Subsequently, the SiO film that electron beam evaporation process deposition 220nm is thick is adopted.
4. in the structure obtained in step 3, repeat step 2 and step 3, complete all the other 3 layers of Au arcs are connected Au post preparation with interlayer, acquisition class spiral chirality metal Meta Materials circuit polarizer.
Fig. 5 is the Transmittance spectrum of the present embodiment class spiral hand-type round metal polarizer, in figure, solid squares curve represents the transmitance of left circularly polarized light, hollow circular curve represents the transmitance of right-circularly polarized light, the operating wavelength range of the present embodiment is: 5.5 μm-11.5 μm, right-circularly polarized light maximum transmission 65.4%, maximum extinction ratio 6.0:1.
Embodiment three
See Fig. 2, the class spiral chirality metal Meta Materials circuit polarizer of the present embodiment comprise Si substrate 1, with the SiO wall 2 of substrate strong bonded and four layers of class spiral metal chirality micro structure array 3 being embedded in SiO wall.X and the y direction cycle is p=2.2 μm, space layer d=550nm between two-layer, and four stacked on top comprise the part Cu circular arc that angle is 120 °, and each Cu arc size is identical with interval height is internal diameter r
i=550nm, external diameter r
o=1.05 μm, thickness t=400nm, and rotate arrangement around same central shaft, upper strata Cu circular arc comparatively lower floor Cu circular arc turns clockwise 120 °, and the head end of lower floor Cu arc end and adjacent upper strata Cu arc is by a radius r
cthe Cu cylinder of=250nm is connected to form class spirality up and down; Plan structure unit is a complete circle arc shape, and the 4th layer of Cu arc is overlapping with ground floor Cu arc.
The method for making of above-mentioned class spiral chirality metal Meta Materials circuit polarizer, comprises the following steps:
1. deposit the metal pair quasi-mark of 100nm first on a si substrate, then deposit the thick SiO film of 950nm by electron beam evaporation process.
2. even spin coating 500nm ZAP electron sensitive resist on the film obtained in step 1, forms ground floor partial arc glue pattern by electron beam exposure technique, adopts ICP etching technics to etch away the SiO of 400nm, by Graphic transitions on SiO wall subsequently.By electron beam evaporation process deposition 400nm Cu, peel off the preparation of the ground floor Cu arc that removed photoresist.
3. the structure obtained in step 2 adopts electron beam evaporation process deposit the thick SiO film of 550nm, the ZAP electron sensitive resist of even spin coating 600nm, form second layer connecting cylinder figure by electron beam exposure technique alignment.By electron beam evaporation process deposition 550nm Cu, peel off the preparation of the Cu connecting cylinder between ground floor and the second layer of having removed photoresist.Subsequently, the SiO film that electron beam evaporation process deposition 400nm is thick is adopted.
4. in the structure obtained in step 3, repeat step 2 and step 3, complete all the other 3 layers of Cu arcs are connected Cu post preparation with interlayer, acquisition class spiral chirality metal Meta Materials circuit polarizer.
Fig. 7 is the Transmittance spectrum of the present embodiment class spiral hand-type round metal polarizer, in figure, solid squares curve represents the transmitance of left circularly polarized light, hollow circular curve represents the transmitance of right-circularly polarized light, the operating wavelength range of the present embodiment is: 8.0 μm-18.5 μm, right-circularly polarized light maximum transmission 56.8%, maximum extinction ratio 7.1:1.
Embodiment four
See Fig. 2, the class spiral chirality metal Meta Materials circuit polarizer of the present embodiment comprise silicon substrate 1, with the SiO wall 2 of substrate strong bonded and ten layers of class spiral metal chirality micro structure array 3 being embedded in SiO wall.X and the y direction cycle is p=600nm, space layer d=195nm between two-layer, and four stacked on top comprise the part Au circular arc that angle is 120 °, and each Au arc size is identical with interval height is internal diameter r
i=182nm, external diameter r
o=302nm, thickness t=100nm, and rotate arrangement around same central shaft, upper strata Au circular arc comparatively lower floor Au circular arc turns clockwise 120 °, and the head end of lower floor Au arc end and adjacent upper strata Au arc is by a radius r
cthe Au cylinder of=60nm is connected to form class spirality up and down; Plan structure unit is a complete circle arc shape, the 4th layer, layer 7 and the tenth layer of Au arc overlapping with ground floor Au arc, Au arc and be all coated with the Ti tack coat of 5nm between Au post and dielectric distance layer.
The method for making of above-mentioned class spiral chirality metal Meta Materials circuit polarizer, comprises the following steps:
1. deposit the metal pair quasi-mark of 100nm first on a si substrate, then deposit the thick SiO film of 300nm by electron beam evaporation process.
2. even spin coating 300nm PMMA electron sensitive resist on the film obtained in step 1, forms ground floor partial arc glue pattern by electron beam exposure technique, adopts ICP etching technics to etch away the SiO of 105nm, by Graphic transitions on SiO wall subsequently.Deposit 5nmTi tack coat and 100nm Au successively by electron beam evaporation process, peel off the preparation of the ground floor Au arc that removed photoresist.
3. the structure obtained in step 2 adopts electron beam evaporation process deposit the thick SiO film of 195nm, even spin coating 400nm PMMA electron sensitive resist, form second layer connecting cylinder figure by electron beam exposure technique alignment.Deposit 5nm Ti and 190nm Au successively by electron beam evaporation process, peel off the preparation of the Au connecting cylinder between ground floor and the second layer of having removed photoresist.Subsequently, the SiO film that electron beam evaporation process deposition 105nm is thick is adopted.
4. in the structure obtained in step 3, repeat step 2 and step 3, complete all the other 3 layers of Au arcs are connected Au post preparation with interlayer, acquisition class spiral chirality metal Meta Materials circuit polarizer.
Fig. 7 is the Transmittance spectrum of the present embodiment class spiral hand-type round metal polarizer, in figure, solid squares curve represents the transmitance of left circularly polarized light, hollow circular curve represents the transmitance of right-circularly polarized light, the operating wavelength range of the present embodiment is: 3.0 μm-6.5 μm, right-circularly polarized light maximum transmission 70.0%, maximum extinction ratio 18.2:1.
Claims (1)
1. a kind spiral metal chirality Meta Materials circuit polarizer, its structure is: be followed successively by from down to up in substrate (1) front and the transparent medium wall (2) of substrate strong bonded and class spiral metal chirality micro structure array (3) that is embedded in transparent medium wall; It is characterized in that:
The material of described substrate (1) is fused silica glass, K9 glass, ZK6 glass, BAK Glass optical glass, jewel or silicon chip, germanium wafer;
The material of described transparent medium wall (2) is the SiO being applicable to vacuum coating or the growth of magnetron sputtering membrane process
2or SiO or MgO or Al
2o
3or MgF
2or ZnS.
Described micro structure array (3) comprises the microstructure unit of N number of arrangement in cyclic array, 1 < N≤10
6; Microstructure unit comprises m stacked on top part metals circular arc, the size of each metal circular arc is with to comprise angle θ identical, arrange around same central rotation, upper strata metal circular arc comparatively lower metal circular arc rotates θ angle, 10 °≤θ≤180 °, and meet 360/ θ+1≤m≤10, the end composition class spirality of upper/lower layer metallic circular arc is connected through metal cylinder; Described metal circular arc and the material of cylinder are Au or Ag or Cu or Pt or Al with surface plasma body resonant vibration characteristic, and the material of each metal circular arc and cylinder is same metal material or metal material not of the same race.The unit size of metal chiral micro structure array (3) is characterized as: x and the y direction cycle is p=n* (200 ~ 220) nm, spacer thickness d=n* (45 ~ 55) nm between two-layer, metal circular arc radius r=n* (75 ~ 80) nm, width w=n* (15 ~ 25) nm, external diameter r
o=r+w/2nm, internal diameter r
i=r-w/2nm, thickness t=n* (30 ~ 40) nm, metal arc and be all coated with the tack coat of 0 ~ 20nm between metal column and dielectric distance layer.Wherein, p > 2*r
o, the span of n is 1≤n≤10.
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| CN114167529A (en) * | 2021-12-09 | 2022-03-11 | 北京化工大学 | Structure for chirally regulating and controlling electromagnetic induction transparency phenomenon |
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