CN105954826A - All-medium ultrathin two-dimensional circular polarization dichroic device and preparation method thereof - Google Patents
All-medium ultrathin two-dimensional circular polarization dichroic device and preparation method thereof Download PDFInfo
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- CN105954826A CN105954826A CN201610469385.5A CN201610469385A CN105954826A CN 105954826 A CN105954826 A CN 105954826A CN 201610469385 A CN201610469385 A CN 201610469385A CN 105954826 A CN105954826 A CN 105954826A
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- G02B5/00—Optical elements other than lenses
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- G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
Abstract
The invention provides an all-medium ultrathin two-dimensional circular polarization dichroic device and a preparation method thereof, for realizing the effects of directly generating circularly polarized light and distinguishing left and right rotation circularly polarized light. The structure comprises a substrate and a Z-shaped through hole which covers the substrate and is etched in a medium layer. According to the invention, the average circular dichroism of a polarizer at a waveband of 1.50[mu]m to 1.61[mu]m is more than 70%, the circular dichroism at a waveband of 1.53[mu]m can reach 98.3% to the maximum degree, and the all-medium ultrathin two-dimensional circular polarization dichroic device has the advantages of quite wide waveband, simple structure and easy manufacturing, and thereby having a quite large application value in future optical sensing systems, advanced nanometer photon devices and integrated optical systems.
Description
Technical field
The present invention relates to optical element technology of preparing, be specifically related to design of a kind of all dielectric ultra-thin two-dimension circular polarization dichroics and preparation method thereof.
Background technology
In imaging technique, owing to polarization imaging technology can carry out remote image acquisition operations under rugged environment, at aspects such as suppression background noise, raising detection range, minutia acquisition and camouflage of target identifications, there is absolute advantages.Therefore, it has application widely, such as: the detectable target hidden or pretend；Sea and the detection of submarine target and identification can be realized；The navigation under the conditions of smog climatic environment can be realized；Effectively distinguish metal and insulator or from decoy, distinguish real goal；The medical diagnosis such as cancer, burn can be carried out；Object features (such as fingerprint etc.) can be identified；Spaceborne or aerial remote sensing can be realized；Also can combine with other technology, such as multispectral polarized ir imaging, ultraphotic spectrum polarized ir imaging etc..In polarized light imaging technique, circular polarization imaging is in widespread attention because of its unique advantage in bulky grain scattering medium.As in the bottom, smog, cloud layer and biological tissue, the image quality of circularly polarized light is better than line polarized light.
The left-handed dextrorotation of circular polarization is distinguished particularly important in optical image technology.Tradition is distinguished the method for left-right rotary circularly polarized light and is usually the line polarized light with quarter-wave plate, circular polarization being changed into different polarization direction, then selects analyzer to filter further according to required polarization direction.But the band-limited that is suitable for of this method in the bandwidth of wave plate and is unfavorable for that the miniaturization of element is with integrated.In recent years, the sub-wavelength structure device containing surface plasma-wave and technology, as an emerging subject, have the most potential application in many fields, thus are increasingly paid close attention to by people.At present, substantial amounts of research work has done in terms of utilizing nano-micro structure to distinguish left-right rotary circularly polarized light in many seminars.In terms of three-D space structure, 2009, Justyna K. Gansel et al. proposes and has made the circularly polarized light analyzer in a kind of broadband, in medium substrate, i.e. periodically place spiral metal gold thread, by controlling the direction of rotation of helix, can realize left-handed and right-circularly polarized light selectivity is passed through.They deposit the indium tin oxide (ITO) negative electrode as electrochemical deposition of a layer very thin (25nm) the most on the glass substrate, it is then coated with positive photoresist, by 3D laser direct writing system, spiral of air line is carved, placing in the electrolyte containing gold uses the method for electrochemical deposition to be filled in space by gold, finally remove photoresist, obtain the wideband circular polarization sheet at 4um-8um circular dichroism average out to 70%.This structural manufacturing process is complicated, it is difficult to make.2014, Wenshan Cai et al. design also made double-deck curved metal (Ag) structure, and they are respectively provided with circular arc-shaped metal line structure on the step that height is the most different, and experimentally to obtain greatest circle dichromatic at 1.4um be 35%.2014, E.-B. Kley et al., make 2-D and 3-D starfish appearance metal (Au) structure, wherein three dimensional structure obtains the circular dichroism of 40% at 660nm.But existing three-D space structure complex process manufacture difficulty is bigger, it is impossible to compatible with conventional lithographic techniques.2009, Qiwen Zhan et al. proposes and a kind of detects left-handed and right-circularly polarized light method for designing, i.e. utilize the spiral metal slit with sub-wavelength live width, to left-right rotary circularly polarized light outside the exit facet of structure, form different focal beam spots (speck, skin dark stain) and make a distinction left-right rotary circularly polarized light.But this structure can only make a distinction left-right rotary circularly polarized light in pattern, on transmitance energy, discrimination is minimum.It is low to there is structural area indexing in prior art, the shortcomings such as effect wave band is narrow and incompatible with conventional semiconductor processing.
Summary of the invention
It is an object of the invention to provide a kind of design and fabrication method of all dielectric ultra-thin two-dimension circular polarization dichroics, it is possible to realize the differentiation to left-right rotary circularly polarized light, and it is wider to have wave band, simple in construction, it is easy to the feature of making.
To achieve the above object of the invention, the technical solution used in the present invention is: a kind of all dielectric ultra-thin two-dimension circular polarization dichroics, is made up of building block array；Described construction unit includes light-transparent substrate and is covered in suprabasil dielectric layer；Described dielectric layer is provided with Z-type through hole；Described Z-type through hole runs through upper surface and the lower surface of dielectric layer；A length of 0.18 μm of vertical arms of described Z-type through hole～0.24 μm, a length of 0.48 μm of transverse arm～0.54 μm, stitch a width of 0.30 μm～0.33 μm；The thickness of described dielectric layer is 0.20 μm～0.26 μm；In described all dielectric ultra-thin two-dimension circular polarization dichroics, the cycle of each construction unit is 0.97 μm～1.00 μm.
In technique scheme, described light-transparent substrate includes silicon dioxide printing opacity base material, and dielectric layer is the semi-conducting materials such as silicon, germanium, GaAs；Preferably, dielectric layer is silicon, and light-transparent substrate is silicon dioxide.Processing technology is the most ripe, and low price, easily obtains.
The invention also discloses a kind of all dielectric ultra-thin two-dimension circular polarization dichroics, be made up of building block array；Described construction unit is Silicon-on-insulator；The top silicon layer of the Silicon-on-insulator of described Silicon-on-insulator is provided with Z-type through hole；Described Z-type through hole runs through upper surface and the lower surface of the top silicon layer of Silicon-on-insulator；A length of 0.18 μm of vertical arms of described Z-type through hole～0.24 μm, a length of 0.48 μm of transverse arm～0.54 μm, stitch a width of 0.30 μm～0.33 μm；The thickness of described top silicon layer is 0.20 μm～0.26 μm；In described all dielectric ultra-thin two-dimension circular polarization dichroics, the cycle of each construction unit is 0.97 μm～1.00 μm.Silicon-on-insulator is the combination of Si layer+SiO2 intermediate layer+Si substrate, and according to position relationship, Si layer is top silicon layer, relatively thin.
In technique scheme, position relationship is state during actual application, dielectric layer is above light-transparent substrate, and Z-type via etch is in semiconductor medium layer, and during etching, Z-type through hole cuts through dielectric layer, Z-type through hole runs through dielectric layer upper and lower surface, therefore being through hole, on described Z-type through hole, the distance on any two limits is both less than the cycle of each construction unit, i.e. Z-type clear size of opening is less than the construction unit cycle, and through hole is less than dielectric layer edge.Z-type through hole is two dimension chiral structure, and hand structure refers to that the mirror image of self can not overlap with self, and Z-type through hole can have different absorption, reflection and transmission effects, i.e. circular dichroism to incident left-right rotary circularly polarized light.Preferably, a length of 0.2 μm of vertical arms of described Z-type through hole, a length of 0.5 μm of transverse arm, stitch a width of 0.32 μm, the thickness of dielectric layer (top silicon layer) is 0.25 μm；In described all dielectric ultra-thin two-dimension circular polarization dichroics, the cycle of each construction unit is 0.98 μm.Owing to medium is far smaller than metal for the absorption of incident illumination, therefore all dielectric chiral structure can reach higher circular dichroism, and its circular dichroism is at 1.50 μm-1.61 mu m wavebands averagely more than 70%, and at 1.53 μm, circular dichroism can reach 98.3%.
All dielectric ultra-thin two-dimension circular polarization dichroics disclosed by the invention has the strongest circular dichroism, thus realizes the function that circular polarization state is distinguished；Therefore the invention also discloses the application in detection circularly polarized light of the above-mentioned all dielectric ultra-thin two-dimension circular polarization dichroics.The service band of its correspondence is communication band, and described service band can be modulated according to choosing of structural parameters.
The present invention further discloses above-mentioned all dielectric ultra-thin two-dimension circular polarization dichroics preparation method, method one: first, use chemical vapour deposition technique to grow layer of semiconductor dielectric layer on substrate；Then photoetching process is utilized, such as coat a layer photoetching glue, utilize electron beam exposure developing technique to carve photoresist structure, re-use reactive ion beam technique etching semiconductor dielectric layer, then remove residual photoresist and obtain all dielectric ultra-thin two-dimension circular polarization dichroics.Method two: after using chemical vapour deposition technique to grow semiconductor medium layer, directly uses focused-ion-beam lithography technique to obtain the circular polarization polarizer.Focused ion bundle direct-write process or photoetching process can also be utilized to prepare Z-type through hole in the top silicon layer of Silicon-on-insulator, i.e. obtain all dielectric ultra-thin two-dimension circular polarization dichroics.Use e-beam direct-writing exposure and develop；Use reactive ion beam etching (RIBE) photoresist；Acetone is utilized to remove residual photoresist.
Owing to technique scheme is used, the present invention compared with prior art has the advantage that
1. present invention firstly discloses all dielectric ultra-thin two-dimension circular polarization dichroics, there is the strongest circular dichroism, thus realize the function that circular polarization state is distinguished, its circular dichroism at 1.50 μm-1.61 mu m wavebands averagely more than 70%, at 1.53 μm, circular dichroism can reach 98.3%, achieves beyond thought technique effect.
All dielectric ultra-thin two-dimension circular polarization dichroics the most disclosed in this invention is rational in infrastructure, be prone to making, and the dimensional parameters of Z-type through hole is adjustable, and preparation method is completely compatible with existing semiconductor fabrication process；Overcoming prior art needs loaded down with trivial details preparation process just can obtain the defect of analyzer.
All dielectric ultra-thin two-dimension circular polarization dichroics raw material sources the most disclosed by the invention are wide, preparation is simple, and financial resources, time cost are lower compared to existing technology；And excellent performance, in optical sensor system, advanced nano-photon device and integrated optics system, has the biggest using value.
Accompanying drawing explanation
Fig. 1 is all dielectric ultra-thin two-dimension circular polarization dichroics of the present invention and construction unit schematic diagram；
Wherein: 1, transparent substrates；2, dielectric layer；3, Z-type through hole；
Fig. 2 is all dielectric ultra-thin two-dimension circular polarization dichroics construction unit main TV structure schematic diagram of embodiment one；
Fig. 3 is all dielectric ultra-thin two-dimension circular polarization dichroics construction unit plan structure schematic diagram of embodiment one；
Fig. 4 is the transmittance curve figure that in embodiment one, left-right rotary circularly polarized light is passed through all dielectric ultra-thin two-dimension circular polarization dichroics by substrate incident；
Fig. 5 is the circular dichroism curve chart that in embodiment one, left-right rotary circularly polarized light is passed through all dielectric ultra-thin two-dimension circular polarization dichroics by substrate incident；
Fig. 6 is the transmittance curve figure that in embodiment two, left-right rotary circularly polarized light is passed through all dielectric ultra-thin two-dimension circular polarization dichroics by substrate incident；
Fig. 7 is the circular dichroism curve chart that in embodiment two, left-right rotary circularly polarized light is passed through all dielectric ultra-thin two-dimension circular polarization dichroics by substrate incident；
Fig. 8 is the transmittance curve figure that in embodiment three, left-right rotary circularly polarized light is passed through all dielectric ultra-thin two-dimension circular polarization dichroics by substrate incident；
Fig. 9 is the circular dichroism curve chart that in embodiment three, left-right rotary circularly polarized light is passed through all dielectric ultra-thin two-dimension circular polarization dichroics by substrate incident；
Figure 10 is the transmittance curve figure that in embodiment four, left-right rotary circularly polarized light is passed through all dielectric ultra-thin two-dimension circular polarization dichroics by substrate incident；
Figure 11 is the circular dichroism curve chart that in embodiment four, left-right rotary circularly polarized light is passed through all dielectric ultra-thin two-dimension circular polarization dichroics by substrate incident.
Detailed description of the invention
Below in conjunction with embodiment, accompanying drawing, the invention will be further described:
Seeing shown in accompanying drawing 1, all dielectric ultra-thin two-dimension circular polarization dichroics of the present invention is made up of building block array；Described construction unit includes light-transparent substrate 1 and is covered in suprabasil dielectric layer 2；Described dielectric layer is provided with Z-type through hole 3；The combination of multiple building block array i.e. obtains all dielectric ultra-thin two-dimension circular polarization dichroics.
Embodiment one
Seeing accompanying drawing 2, for all dielectric ultra-thin two-dimension circular polarization dichroics construction unit main TV structure schematic diagram, wherein the thickness H of semiconductor medium layer silicon is 0.25 μm；See accompanying drawing 3, for all dielectric ultra-thin two-dimension circular polarization dichroics plan structure schematic diagram, the longitudinal brachium L1 wherein etching Z-type through hole in the dielectric layer is 0.2 μm, and horizontal brachium L2 is 0.5 μm, stitching wide W is 0.32 μm, and the cycle P of each construction unit is 0.98 μm.
Accompanying drawing 4 is left-right rotary circularly polarized light by the silicon dioxide substrate incidence transmittance curve figure by above-mentioned all dielectric ultra-thin two-dimension circular polarization dichroics；Accompanying drawing 5 is the circular dichroism curve chart of all dielectric ultra-thin two-dimension circular polarization dichroics.Shown in Figure 4, in 1.50 μm-1.61 mu m waveband structures, the transmitance height of left-right rotary circularly polarized light be there are differences.Shown in Figure 5, at 1.50 μm-1.61 mu m waveband circular dichroisms averagely more than 70%.
The manufacture method of above-mentioned all dielectric ultra-thin two-dimension circular polarization dichroics, comprises the steps:
(1) chemical vapour deposition technique is used to grow one layer of silicon semiconductor dielectric layer in silicon dioxide substrates；
(2) coat a layer photoetching glue, utilize electron beam lithography to carve " Z " photoresist structure；
(3) reactive ion beam technique etching semiconductor dielectric layer is used；
(4) acetone removal residual photoresist obtains all dielectric ultra-thin two-dimension circular polarization dichroics.
Embodiment two
In the present embodiment, substrate is silicon dioxide, and semiconductor medium layer is silicon；The thickness of semiconductor medium layer is H=0.23 μm, and longitudinal brachium L1 of Z-type through hole is 0.2 μm, and horizontal brachium L2 is 0.5 μm, stitches a width of 0.32 μm, and the cycle of each construction unit is 0.98 μm.After using chemical vapour deposition technique to grow semiconductor medium layer, focused-ion-beam lithography technique is directly used to obtain the circular polarization polarizer.
Accompanying drawing 6 is left-right rotary circularly polarized light by the silicon dioxide substrate incidence transmittance curve figure by above-mentioned all dielectric ultra-thin two-dimension circular polarization dichroics；Accompanying drawing 7 is the circular dichroism curve chart of all dielectric ultra-thin two-dimension circular polarization dichroics.Shown in Figure 6, be there is larger difference in the transmitance height of left-right rotary circularly polarized light in 1.48 μm-1.54 mu m waveband structures.Shown in Figure 7, at 1.48 μm-1.54 mu m waveband circular dichroisms averagely more than 80%, at 1.53 μm, circular dichroism can reach 98.3%.
Embodiment three
The preparation technology of the present embodiment is consistent with embodiment one, and wherein substrate is silicon dioxide, and semiconductor medium layer is GaAs；Longitudinal brachium L1 of Z-type through hole is 0.2 μm, and horizontal brachium L2 is 0.5 μm, stitches a width of 0.32 μm, and the thickness H of dielectric layer is: 0.25 μm.The cycle of each construction unit is 0.98 μm.
Accompanying drawing 8 is left-right rotary circularly polarized light by the silicon dioxide substrate incidence transmittance curve figure by above-mentioned all dielectric ultra-thin two-dimension circular polarization dichroics；Accompanying drawing 9 is the circular dichroism curve chart of all dielectric ultra-thin two-dimension circular polarization dichroics.Shown in Figure 8, be there is larger difference in the transmitance of left-right rotary circularly polarized light in 1.46 μm-1.56 mu m waveband structures.Shown in Figure 9, at 1.46 μm-1.56 mu m waveband circular dichroisms averagely more than 70%.
Embodiment four
Commercial Silicon-on-insulator is selected in the present embodiment preparation, and top layer silicon thickness is 0.22 μm, and intermediate layer silicon dioxide thickness is 3.0 μm, and bottom silicon degree is 675 μm.Z-type via etch is in top layer silicon, and longitudinal brachium L1 of Z-type through hole is 0.2 μm, and horizontal brachium L2 is 0.5 μm, stitches a width of 0.32 μm, and the thickness H of dielectric layer is: 0.22 μm.The cycle of each construction unit is 0.98 μm.
Accompanying drawing 10 is left-right rotary circularly polarized light by the silicon base incidence transmittance curve figure by above-mentioned all dielectric ultra-thin two-dimension circular polarization dichroics；Accompanying drawing 11 is the circular dichroism curve chart of all dielectric ultra-thin two-dimension circular polarization dichroics.Shown in Figure 10, be there is larger difference in the transmitance of left-right rotary circularly polarized light in 1.45 μm-1.51 mu m waveband structures.Shown in Figure 11, at 1.45 μm-1.51 mu m waveband circular dichroisms averagely more than 70%.
Claims (10)
1. an all dielectric ultra-thin two-dimension circular polarization dichroics, it is characterised in that: described all dielectric ultra-thin two-dimension circular polarization dichroics is made up of building block array；Described construction unit includes light-transparent substrate and the dielectric layer being covered in light-transparent substrate；Described dielectric layer is provided with Z-type through hole；Described Z-type through hole runs through upper surface and the lower surface of dielectric layer；A length of 0.18 μm of vertical arms of described Z-type through hole～0.24 μm, a length of 0.48 μm of transverse arm～0.54 μm, stitch a width of 0.30 μm～0.33 μm；The thickness of described dielectric layer is 0.23 μm～0.26 μm；In described all dielectric ultra-thin two-dimension circular polarization dichroics, the cycle of each construction unit is 0.97 μm～1.00 μm.
All dielectric ultra-thin two-dimension circular polarization dichroics the most according to claim 1, it is characterised in that: described light-transparent substrate includes silicon dioxide substrate；Described dielectric layer is semiconductor medium layer.
All dielectric ultra-thin two-dimension circular polarization dichroics the most according to claim 2, it is characterised in that: described semiconductor medium layer includes silicon dielectric layer, indium arsenide dielectric layer or GaAs dielectric layer.
All dielectric ultra-thin two-dimension circular polarization dichroics the most according to claim 1, it is characterised in that: on described Z-type through hole, the distance on any two limits is both less than the cycle of each construction unit.
All dielectric ultra-thin two-dimension circular polarization dichroics the most according to claim 1, it is characterised in that: a length of 0.2 μm of vertical arms of described Z-type through hole, a length of 0.5 μm of transverse arm, stitch a width of 0.32 μm, the thickness of dielectric layer is 0.25 μm；In described all dielectric ultra-thin two-dimension circular polarization dichroics, the cycle of each construction unit is 0.98 μm.
6. an all dielectric ultra-thin two-dimension circular polarization dichroics, it is characterised in that: described all dielectric ultra-thin two-dimension circular polarization dichroics is made up of building block array；Described construction unit is Silicon-on-insulator；The top silicon layer of described Silicon-on-insulator is provided with Z-type through hole；Described Z-type through hole runs through upper surface and the lower surface of the top silicon layer of Silicon-on-insulator；A length of 0.18 μm of vertical arms of described Z-type through hole～0.24 μm, a length of 0.48 μm of transverse arm～0.54 μm, stitch a width of 0.30 μm～0.33 μm；The thickness of the top silicon layer of described Silicon-on-insulator is 0.20 μm～0.26 μm；In described all dielectric ultra-thin two-dimension circular polarization dichroics, the cycle of each construction unit is 0.97 μm～1.00 μm.
All dielectric ultra-thin two-dimension circular polarization dichroics the most according to claim 6, it is characterised in that: a length of 0.2 μm of vertical arms of described Z-type through hole, a length of 0.5 μm of transverse arm, stitch a width of 0.32 μm, the thickness of top silicon layer is 0.25 μm；In described all dielectric ultra-thin two-dimension circular polarization dichroics, the cycle of each construction unit is 0.98 μm.
8. the application in detection circularly polarized light of all dielectric ultra-thin two-dimension circular polarization polarizer described in claim 1 or 6.
9. the preparation method of all dielectric ultra-thin two-dimension circular polarization dichroics described in claim 1, it is characterised in that comprise the following steps: grow semiconductor medium layer in light-transparent substrate first by chemical vapour deposition technique；Then utilize focused ion bundle direct-write process or photoetching process to prepare Z-type through hole on dielectric layer, i.e. obtain all dielectric ultra-thin two-dimension circular polarization dichroics.
10. the preparation method of all dielectric ultra-thin two-dimension circular polarization dichroics described in claim 6, it is characterized in that: utilize focused ion bundle direct-write process or photoetching process to prepare Z-type through hole in the top silicon layer of Silicon-on-insulator, i.e. obtain all dielectric ultra-thin two-dimension circular polarization dichroics.
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Also Published As
| Publication number | Publication date |
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| CN108897088A (en) | 2018-11-27 |
| CN105954826B (en) | 2018-07-20 |
| CN108897088B (en) | 2020-09-25 |
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