CN106199814A - Pixel type many orientations double-layer nanometer grid stroke polariser based on plasma primitive - Google Patents
Pixel type many orientations double-layer nanometer grid stroke polariser based on plasma primitive Download PDFInfo
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- G02B5/00—Optical elements other than lenses
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- G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
- G02B5/3058—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state comprising electrically conductive elements, e.g. wire grids, conductive particles
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Abstract
The invention discloses pixel type many orientations double-layer nanometer grid stroke polariser based on plasma primitive, including substrate, transition zone and pixel layer；Pixel layer is made up of super-pixel building block array；Super-pixel construction unit includes 0 ° of double-layer nanometer grating tended to, 45 ° of double-layer nanometer gratings tended to, 135 ° of double-layer nanometer gratings tended to and 90 ° of double-layer nanometer gratings tended to；Groove and the metal level of convex surfaces that double-layer nanometer grating by dielectric grating and is positioned at dielectric grating form；The cycle of dielectric grating is 260nm 300nm, and dutycycle is 0.5 0.7, and thickness is 90nm 110nm；The thickness of metal level is 70nm 90nm；Substrate surface in double-level-metal nanometer grating block of pixels introduces the transition zone of one layer of low-refraction, and the introducing of transition zone not only increases the effect of device and avoids the etching to metal so that processing technology is more convenient.
Description
Technical field
The present invention relates to optical element technology of preparing, be specifically related to a kind of pixel type based on surface plasma primitive and take more
Design to double-level-metal nanometer grating linear polarization and preparation method thereof.
Background technology
In recent years, along with the development of polarization technology, it plays more and more important in terms of target recognition with detection
Effect.From fresnel formula, when object is being launched, scatters, reflected and during transmitted electromagnetic wave, can produce partially
Shake information, and these polarization informations are closely bound up with object self character.Different objects is even in the phase under varying environment
Polarization information with object all can be different.Polarization Detection can provide and more close than conventional strength detection and spectrographic detection
Information in target.Polarization imaging technology becomes the third imaging technique outside conventional strength imaging and light spectrum image-forming, gradually
Various countries' researcher is caused more and more to pay close attention to.Polarization imaging technology is product Polarization Detection technology combined with imaging technique
Thing, it is mainly by the different polarization component of suitably polarization monitoring device acquisition test target, and imaging system utilizes these
Test light with some or all of polarization information carrys out imaging, thus obtains the polarization image of test target.By to this
The analysis of a little polarization information images and calculating, can be used to obtain numerous characteristic informations of measured target, including shape, material,
The information such as roughness and moisture.
In recent decades, polarization imaging technology has become as the object of study of lot of domestic and foreign colleges and universities and scientific research institution,
Numerous aspects such as astrosurveillance, target recognition, medical treatment, military affairs, measurement have important effect, play huge potentiality.Example
As: in astronomical field, polarization imaging detection is applied to planetary surface soil, Atmospheric Survey and fixed star, planet and nebula the earliest
The detection of state etc..In many astronomical observation fields, utilizing polarimetry or polarization imaging to carry out subsidiary is all very
Preferably select.In general, natural environment is distinguished relatively big from culture due to its polarization informations different of respective characteristic, logical
Cross polarization imaging technology and can very easily distinguish culture and natural background, and the contrast of polarization information image is big
In the image that other imaging modes are obtained, there is in terms of target detection or enhancing the biggest advantage.At medical field, can
To carry out contactless, painless and lossless lesion detection by polarization image, it is particularly suited for the detection of skin and eye.Due to
Polarization imaging detects the numerous advantages having in terms of target recognition, and it also has very important application valency at military aspect
Value, makes polarization imaging technology become very effective military means of identification distinguishing camouflage thing with the advantage of natural environment.
Traditional polarization imaging technology, generally by high speed rotating polaroid, obtains the letter in object different polarization direction
Breath, but this method may be only available for stationary body or the detection of low speed mobile object, it is impossible to obtain target in real time same
The polarization information in the different polarization direction in one moment, and this method is higher to the stability requirement of imaging system.Pixel
The appearance of formula many orientations minitype polarization device array solves this problem, and it is by the metal grating polariser collection that will need not be orientated
Close in an array, this array can be combined with CCD camera, the pixel of the pixel in array and CCD camera one a pair
Should, thus the polarization information on object different polarization direction can be obtained simultaneously, it is achieved real-time polarization imaging, and without rotating
Polaroid, thus the stability requirement to imaging system is relatively low.
Be applied to polarizer most be exactly sub-wave length metal grating.So-called sub-wave length metal grating refers to metal grating
Cycle much smaller than lambda1-wavelength.Now, sub-wave length metal grating presents polarization sensitivity strongly, thus utilizes
Sub-wave length metal grating realizes the acquisition of linear polarization information and is the most increasingly valued by the people.Sub-wave length metal grating exists in recent years
The aspects such as preparation technology, grating performance and device application have had significant progress and progress.In terms of processing technology, holographic
The technology such as exposure, electron-beam direct writing, nano impression, laser direct-writing, magnetron sputtering, ion beam etching, heat evaporation, electroforming obtains not
Disconnected development.
Along with the continuous progress of sub-wave length metal grating technique, performance is also improving constantly, thus based on sub-wavelength metal
The development of the pixel type micro wire polariser array of grating the most increasingly receives publicity.1998, U.S. Alabama Han Ciwei
G. P. Nordin of your university et al. designs and is prepared for the minitype polarization device array for polarization imaging of 3 ~ 5 mu m wavebands.
Experiment uses the method for substep, utilizes dual-beam exposure technique to be prepared.Experiment preparation sample substrate material is silicon, array bag
Containing the grating of three different directions, pixelated array size is 16 × 16 μm, and each pixel is by the molybdenum light that the cycle is 475nm
Grid form.And this polarization arrays is combined with infrared camera, obtain measuring the polarization image of Stokes first three component of vector,
Achieve preliminary polarization imaging.But owing to using the dual-beam exposure technique of multiple step format to be prepared laboratory sample, pixel
Between spacing bigger.Preparation process complexity is time-consuming, needs to etch metal, and cost high success rate is low.2008, U.S.'s Dayton was big
Learn Z. Wu et al. design and be prepared for the wire grating minitype polarization device for infrared polarization imaging.This polarizer applications is in 1.6
~ 5 mu m wavebands, and designer silicon base and metal grating be directly added into layer of silicon dioxide layer with improve polariser short
The performance of wave-wave section.Z. Wu et al. utilizes deep UV projection exposure technique to be prepared for the 400nm cycle, and dutycycle is 0.7, thickness
Metal grating for 140nm.Utilizing adjustable infrared laser to detect, the transmitance of TM light is more than 70%, in mid-infrared
Wave band extinction ratio is more than 104, in 1.5 μm band above extinction ratios more than 102。
Existing preparation method needs first to plate layer of silicon dioxide in plating layer of metal, in addition it is also necessary to performs etching metal and protects
Metal is carved (exposing silicon dioxide in grating groove) by card completely, requires high to technique fineness and takes time and effort, success
Rate is extremely low should not put into production, the transmitance of sample with extinction ratio all than pixel type many orientations double-layer nanometer grid stroke polariser
Poor performance.
Summary of the invention
It is an object of the invention to provide a kind of pixel type many orientations double-level-metal nanometer light based on surface plasma primitive
The design and fabrication method of grid line polariser, it is possible to realize obtaining in real time the target polarization in the different polarization direction of synchronization
Information, and it is high to have imaging system stability, wave band is wider, simple in construction, manufacturing process only need to etch transition zone and without
Etching metal, it is easy to the feature of making.
To achieve the above object of the invention, the technical solution used in the present invention is: a kind of pixel type based on plasma primitive
Many orientation double-layer nanometer grid stroke polarisers, including substrate, transition zone and pixel layer；Described pixel layer is by super-pixel structure list
Element array forms；Described super-pixel construction unit include 0 ° of double-layer nanometer grating tended to, 45 ° tend to double-layer nanometer grating,
135 ° of double-layer nanometer gratings tended to and 90 ° of double-layer nanometer gratings tended to；Described double-layer nanometer grating by dielectric grating with
And it is positioned at the groove of dielectric grating and the metal level composition of convex surfaces；The cycle of described dielectric grating is 260nm-300nm,
Dutycycle is 0.5-0.7, and thickness is 90nm-110nm；The thickness of described metal level is 70nm-90nm.
In technique scheme, double-layer nanometer grating is medium and the double-layer grating of metal composite and double-layer grating knot
Structure is covered on transition zone, and transition zone is positioned in substrate；The thickness of substrate is 0.5-1mm.Matrix is semiconductor base, thickness
About 0.5 ~ 1mm；Transition zone is silicon dioxide transition zone, Afluon (Asta) transition zone or PMMA transition zone；Transition zone grating is dioxy
SiClx dielectric grating, Afluon (Asta) dielectric grating or PMMA dielectric grating；Metal is aluminum, silver-colored or golden.Preferably, described matrix
For silicon base；Described transition zone is silicon dioxide transition zone；Described dielectric grating is silica dioxide medium grating；Described metal is
Aluminum；Make efficiency can be effectively improved, reduce cost of manufacture.By silica-based composite double layer nanometer grating structure with the many orientations of pixel type
Form to carry out array integrated, by metal grating polariser set to the array of different orientation, can be by this array
Combine with CCD camera, the pixel in array and the pixel one_to_one corresponding of CCD camera, thus it is different to obtain object simultaneously
Polarization information on polarization direction, it is achieved real-time polarization imaging, and without rotatory polarization sheet, thus imaging system is stablized
Property require relatively low.Array integration realization is it is thus possible to obtain the polarization information of object different directions simultaneously, it is achieved the reality to object
Time linear polarization imaging.The present invention selects silicon as base material, has good light transmission and physics, change at infrared band
The stability learned.Silicon is semi-conductor type materials the most basic in electronic information material, and micro-nano technology technique relatively becomes
Ripe；And silicon is a kind of chemical inert material, hardness is high, water insoluble, and it has good light transmission at 1 ~ 7um wave band
Can, surface reflectivity is higher, causes integral light-transmitting rate relatively low；Double-layer grating structure in conjunction with the present invention designs and service band,
Product with silicon as substrate has bigger refractive index, is conducive to improving integrally-built light extraction efficiency and performance.
Preferably, transition region thickness H3 is 200nm, has low-refraction, cost controlled；The cycle of dielectric grating is P=
280nm, dutycycle DC=0.6, dielectric grating thickness H2=100nm, the thickness of metal level is H1=80nm.Simplify processing technology
And cost, greatly improve make efficiency, according to embodiment result, (transition zone 200nm, gold during a height of 100nm of dielectric grating
Belong to layer 80nm) can obtain more than 90% TM transmitance, extinction ratio also at more than 55dB, and etching 100nm silicon dioxide success
Rate is very big, and technique is quite ripe and can etch in batches, is especially suitable for industrialization and produces in enormous quantities；When metal layer thickness is less than
During dielectric grating height, metal layer thickness is the biggest, and the extinction ratio of device is the highest, when metal layer thickness is 80nm, and device delustring
Ratio is close to 60dB, when metal layer thickness is 90nm, device extinction ratio close to 65dB, but when metal layer thickness is 90nm, device
The transmitance of the TM ripple of part is extremely low in the range of 3 ~ 4um, if transmitance is too low, just cannot ensure that energy can effectively pass through,
Can have a strong impact on device actual performance, and metal layer thickness is 80nm, can obtain at a relatively high extinction ratio, TM ripple transmitance is again
More than 90% can be maintained at；Additionally dielectric grating and metal level have certain difference in height, when plated film, are difficult to accurately control
The thickness of plated film, if metal layer thickness selects 90nm, then probably cause plated film blocked up because of misoperation when plated film, from
And make device performance be substantially reduced, the most just reduce success rate prepared by device, and selecting metal thickness is that 80nm just can be effective
Avoid this problem, even if being plated to 90nm, then the arrangement impact on device also will not be so big, so says, just reduces
Technology difficulty prepared by device and cost of manufacture.
In the present invention, composite construction is double-layer nanometer metal grating structure, and it is that TE is inclined that metal grating produces the principle of polarization
Shake and excite the electronics of metal wire and produce electric current so that the polarized light reflection in the direction, and TM polarized light is due in the direction
On have the air gap by metal wire stop and electric current cannot be produced, now light wave can pass through grating.Therefore metal grating is in theory
On can reach higher polarized light transmitance and higher extinction ratio.Double by the many orientations of integrated pixel type of face on a silicon substrate
Layer metal nano grating, can increase device for testing polarization, coordinates corresponding Polarization Modulation device in original imaging system
With polarimetry algorithm, by measuring each polarized component of light, and then front 3 the Stokes vectors obtaining tested light are inclined
Shake status information, in order to characterize the polarization state of tested light.By to the analysis of these polarization information images and calculating, permissible
Obtain more polarization parameter image further, such as the images such as degree of polarization, the angle of polarization, ellipticity angle, polarization transfer characteristics, its knot
The various features information such as fruit can be used for analyzing the shape of measured object, roughness, medium character even biochemistry.
In pixel type many orientations double-layer nanometer grid stroke polariser based on plasma primitive of the present invention, dielectric grating and
Transition zone independence selected from silicon dioxide, Afluon (Asta), PMMA etc.；Silicon substrate has higher folding relative to transition zone (n ~ 1.4)
Penetrating rate (n ~ 3.4), corresponding service band is middle-infrared band.Especially dielectric grating and transition zone are when silicon dioxide, 3
~ 5um mid-infrared scope TM ripple transmitance is higher than 70%, and extinction ratio is about 40dB, and in the range of the mid-infrared of 3 ~ 5um, TM ripple passes through
Rate and extinction ratio are obviously improved.
In the present invention, described substrate is silicon, is a kind of chemical inert material, and hardness is high, water insoluble, and its 1 ~
7um wave band has good light transmission, transmitance be more than 50%, it is ensured that material infrared band light transmission and
Physics, the stability of chemistry；Silicon has bigger refractive index simultaneously, is conducive to improving integrally-built light extraction efficiency and property
Energy.
Preferably in technical scheme, pixel type many orientations double-level-metal nanometer grating line based on surface plasma primitive is inclined
Shake device, it is characterised in that: described low-refraction transition zone H3=200nm,；Described double-layer nanometer optical grating construction: the week of dielectric grating
Phase is P=280nm, dutycycle DC=0.6, dielectric grating thickness H2=100nm, and the thickness of metallic aluminum is H1=80nm.Preferably join
Under several, structure can be made to reach wave band the widest, TM ripple transmitance and extinction ratio reach the highest, by composite double layer nanometer grating structure
With the integrated linear polarization device that realizes on a silicon substrate of the form of pixel type many orientations array, therefore the invention also discloses above-mentioned base
In the application in polarization imaging of pixel type many orientations double-layer nanometer grid stroke polariser of plasma primitive.
Photoetching development technology can be utilized to prepare dielectric grating；Electron beam evaporation deposition technology is utilized to prepare metal level.On
State the preparation method of pixel type many orientations double-layer nanometer grid stroke polariser based on plasma primitive, comprise the following steps: be first
First, substrate prepares transition zone after cleaning；Then photoetching development technology is utilized to prepare dielectric grating on transition zone surface；Finally utilize
Electron beam evaporation deposition technology prepares metal level, obtains described pixel type many orientations double-layer nanometer grating based on plasma primitive
Linear polarizer.
Such as, substrate (oxidized silicon chip of twin polishing) is carried out removes the dirty point of substrate surface and greasy dirt so that
Substrate surface has preferable cleannes and adhesion；Followed by spin-coating method coating last layer photoresist (PMMA), utilize
Electron beam exposure etching system carves the many trends of pixel type (0 °, 45 °, 135 °, 90 °) nanometer grating photoresist structure, re-uses
Reactive ion etching (RIE) technique etches, and etching depth is 90nm, then removes residual photoresist and obtains medium nanometer grating,
Finally utilize electron beam evaporation deposition to plate the aluminum metal layer that a layer thickness is 80nm on dielectric grating and be just successfully prepared base
Pixel type many orientations double-level-metal nanometer grating linear polarizer in surface plasma primitive.
Sub-wavelength nano metal grating is combined by the present invention with pixel type many orientations minitype polarization device array, limits micro-nano
Structure, it is thus achieved that the transmitance of high white light and degree of polarization, and confirm that the many orientations of pixel type based on surface plasma primitive are double
The feasibility of layer metal nano grid stroke polariser.Layer of silicon dioxide low-refraction transition zone is introduced at silicon substrate surface,
And on transition zone surface integrated medium/metal composite nano optical grating construction, be effectively improved transmitance and the polarization extinction ratio of structure.
Preferably dielectric grating cycle 280nm, has built measurement of polarization characteristic platform, the sample made is carried out the detection of optical property with
Analyzing, transmitance is higher than 75% in 3 ~ 5um wave band for final double-level-metal nanometer grating, and delustring is about 40dB, has the most partially
Shake characteristic.
Owing to technique scheme is used, the present invention compared with prior art has the advantage that
1. present invention firstly discloses pixel type many orientations double-layer nanometer grid stroke polariser based on plasma primitive, have relatively
Good TM ripple transmitance and extinction ratio, its actual test TM ripple transmitance in the range of 3 ~ 5um mid-infrared is higher than 75%, delustring
It is about 40dB, and this device has preferable stability, can match in real time to relevant detector easily
Polarization imaging, achieves beyond thought technique effect.
Pixel type many orientations double-layer nanometer grid stroke polarizer structure based on plasma primitive the most disclosed by the invention is closed
Manage, be prone to make, double-layer nanometer raster size Parameter adjustable based on silicon base, preparation method and existing semiconductor fabrication work
Skill is completely compatible；Overcoming prior art needs loaded down with trivial details preparation process just can obtain the defect of polarized light device.
Pixel type many orientations double-layer nanometer grid stroke polariser raw material based on plasma primitive the most disclosed by the invention comes
Source is wide, preparation is simple, and financial resources, time cost are lower compared to existing technology；And excellent performance, optical sensor system, advanced person
Nano-photon device and integrated optics system in, there is the biggest using value.
Accompanying drawing explanation
Fig. 1 is embodiment one pixel type based on plasma primitive many orientations double-layer nanometer grid stroke polariser and super picture thereof
The structural representation of element construction unit；
Fig. 2 is pixel type many orientations double-level-metal nanometer grating linear polarizer based on surface plasma primitive of embodiment one
Double-layer nanometer optical grating construction schematic diagram；
Fig. 3 is pixel type many orientations double-level-metal nanometer grating linear polarizer based on surface plasma primitive of embodiment one
Main TV structure schematic diagram；
Wherein: 1,0 ° of double-layer nanometer grating tended to；2,90 ° of double-layer nanometer gratings tended to；3,45 ° of double-layer nanometers tended to
Grating；4,135 ° of double-layer nanometer gratings tended to；5, dielectric grating；6, metal level；7, substrate；8, transition zone；
Fig. 4 be in embodiment one transition region thickness to pixel type many orientations double-level-metal nanometer light based on surface plasma primitive
The transmitance of the TM ripple of grid line polariser affect figure；
Fig. 5 be in embodiment one transition region thickness to pixel type many orientations double-level-metal nanometer light based on surface plasma primitive
The extinction ratio of grid line polariser affect figure；
Fig. 6 is that embodiment one medium grating thickness is to pixel type many orientations double-level-metal nanometer based on surface plasma primitive
The transmitance of the TM ripple of grid stroke polariser affect figure；
Fig. 7 is that embodiment one medium grating thickness is to pixel type many orientations double-level-metal nanometer based on surface plasma primitive
The extinction ratio of grid stroke polariser affect figure；
Fig. 8 be in embodiment one metal layer thickness to pixel type many orientations double-level-metal nanometer light based on surface plasma primitive
The transmitance of the TM ripple of grid line polariser affect figure；
Fig. 9 be in embodiment one metal layer thickness to pixel type many orientations double-level-metal nanometer light based on surface plasma primitive
The extinction ratio of grid line polariser affect figure；
Figure 10 be in embodiment one dutycycle to pixel type many orientations double-level-metal nanometer grating based on surface plasma primitive
The transmitance of the TM ripple of linear polarizer affect figure；
Figure 11 be in embodiment one dutycycle to pixel type many orientations double-level-metal nanometer grating based on surface plasma primitive
The extinction ratio of linear polarizer affect figure；
Figure 12 be in embodiment one light by based on surface plasma primitive by after double-layer nanometer metal grating of substrate incident
The transmitance of pixel type many orientations double-level-metal nanometer grating linear polarizer TM ripple and the curve chart of polariser extinction ratio；
Figure 13 be in embodiment one light by based on surface plasma primitive by after double-layer nanometer metal grating of substrate incident
The transmitance of pixel type many orientations double-level-metal nanometer grating linear polarizer TM ripple and polariser extinction ratio and existing single-layer metal
The Performance comparision figure of grating；
Figure 14 is the signal strength map of the double-level-metal grating in embodiment one；
Figure 15 is the TM transmitance experimental measurements figure with Extinction ratio of the double-level-metal grating in embodiment one.
Detailed description of the invention
Below in conjunction with embodiment, accompanying drawing, the invention will be further described:
Embodiment one
See shown in accompanying drawing 1, for pixel type many orientations double-layer nanometer grid stroke polariser (left) based on plasma primitive and
The structural representation of super-pixel construction unit (right)；Substrate, transition zone and pixel layer form pixel based on plasma primitive
Formula many orientations double-layer nanometer grid stroke polariser, pixel layer is made up of super-pixel building block array；Super-pixel construction unit bag
Include 0 ° tend to 1,90 ° of double-layer nanometer grating tend to 2,45 ° of double-layer nanometer grating tend to double-layer nanometer grating 3 and 135 °
The double-layer nanometer grating 4 tended to.
See accompanying drawing 2, for double-layer nanometer optical grating construction schematic diagram, by dielectric grating 5 and the groove that is positioned at dielectric grating
And the metal level 6 of convex surfaces forms；Becoming apparent to represent, accompanying drawing includes substrate 7 and transition zone 8.In the present invention, four
The arrangement kind tending to structure does not limits, the angle of trend be relatively depending on, if to be laterally 0 ° under virtual condition, then its
He determines as benchmark angle；The different double-layer nanometer grating material compositions tended to and structural parameters are consistent.
Seeing accompanying drawing 3, the master for pixel type many orientations double-layer nanometer grid stroke polariser based on plasma primitive regards knot
Structure schematic diagram, as a example by 0 ° of double-layer nanometer grating tended to, other structures are consistent with this；Wherein, substrate 7 and transition zone 8, double
Groove and the metal level 6 of convex surfaces that layer nanometer grating structure by dielectric grating 5 and is positioned at dielectric grating form；Double-deck
Nanometer grating cycle P=280nm；Dutycycle DC=L1/P=0.6；Metallic aluminium thickness H1=80nm；Dielectric grating thickness H2=
100nm；Transition region thickness H3=200nm；Substrate thickness 0.8mm.
The manufacture method of above-mentioned pixel type many orientations double-layer nanometer grid stroke polariser based on plasma primitive, including such as
Lower step:
(1) oxidized silicon chip to twin polishing is carried out removing the dirty point of substrate surface and greasy dirt so that substrate surface has
Preferably cleannes and adhesion；
(2) spin-coating method is utilized to be coated with last layer electron beam resist PMMA；
(4) electron beam exposure photoetching technique is utilized to carve pixel type many orientation nanos grid photo-etching plastic structure；
(5) use reactive ion etching (RIE) technique etching, then remove residual photoresist and obtain pixel type many orientations medium and receive
Rice grating, etching depth is 100nm；
(6) last electron beam evaporation deposition plates a layer thickness on pixel type many orientations dielectric grating is the aluminum metal of 80nm
Layer, has thus prepared pixel type many orientations double-layer nanometer grid stroke polariser based on plasma primitive；
(7) sample area of experiment preparation is 2 inches, structural region 10mm × 10mm, from structural region cutting one fritter sample,
With optical adhesive (refractive index about 1.7), this fritter sample is fitted with CCD camera, the most integrated after just can realize
Obtain the polarization information on object different polarization direction, it is achieved real-time polarization imaging simultaneously, and without rotatory polarization sheet.
See accompanying drawing 4 to accompanying drawing 12, utilize FDTD to calculate, select 2D pattern building structure, week is set in the horizontal direction
Phase property boundary condition.Existing due to medium in vertical direction, boundary condition utilizes perfect domination set, and analog light source is plane
Ripple, wave-length coverage is 3-5um, the most incident by silicon base.Can be seen that, as H3=0nm, this structure is at whole wave band
Transmitance and extinction ratio the lowest, when transition zone has certain thickness, the transmitance of grating is improved significantly, simultaneously can
To see that extinction ratio is with the change of transition region thickness inconspicuous, along with the continuous increase of transition region thickness, transmittance curve
Peak value moves to long wave direction, at H3For time between 100nm ~ 250nm, in 3 ~ 5 mu m wavebands, transmitance is all higher than 80%, delustring
Ratio is also greater than 55dB；Dielectric grating thickness is less on the impact of transmitance and extinction ratio, and the trend comparison in 3 ~ 5 mu m wavebands is put down
Sliding, and extinction ratio is gradually lowered along with the increase of thickness；In short wave ranges (3 ~ 4 μm), the transmitance of TM light is along with metal
The trend that the increase of grating thickness drastically reduces after presenting first increase, and the transmitance of TM light is with metal light in 4 ~ 5 μ m
The increase of grid thickness and increase, along with the increase of metal grating thickness, extinction ratio increases the most therewith；Increasing along with grating dutycycle
Greatly, TM transmitance presents the trend of first increases and then decreases, and extinction ratio presents and first reduces the trend increased afterwards, along with grating dutycycle
Change, grating transmitance excursion is bigger；The present invention limits H3For 200nm, limit H2Thickness be 100nm, metal level
Thickness H1For 80nm, dutycycle DC is 0.5-0.7, preferably DC=0.6, and now TM transmitance is 91% ~ 98%, and extinction ratio is
58.5dB ~ 59.5dB, has the ideal light characteristic that goes out, and now technique tolerance is higher, reduces preparation technology
Requirement, meets the requirement to grating performance, achieves beyond thought technique effect.
See accompanying drawing 13, by single-layer metal grating go out light characteristic and the present invention silica-based double-layer nanometer grating go out light characteristic
Comparing, wherein single-layer metal grating parameters optimization is P (Al2O3、CaF2, Si)=280nm, H=200nm, DC=0.5；Silica-based
Double-level-metal grating parameters optimization is P (Si double)=280nm, H1=80nm, H2=100nm, H3=200nm, DC=0.6.From
In figure it can be seen that two kinds of metal gratings can obtain higher TM transmitance and extinction ratio in 3 ~ 5 μ m wavelength range go out light
Characteristic, and the extinction ratio of double-layer nanometer grating there are about the raising of 10dB, and single-layer metal light compared with single-layer metal grating
Grid require higher grating thickness, and preparation difficulty is higher, and in double-layer nanometer grating, metal thickness only needs 80nm, and preparation difficulty is big
Big reduce, and process allowance be big, the dielectric grating degree of depth 90 ~ 110nm can, metal layer thickness is at 70 ~ 90nm, metal level
Thickness dielectric grating to be less than height about 20nm, is the more satisfactory structural models of 3 ~ 5 mu m wavebands.
Utilizing silicon nitride infrared light supply as exciting light, the infrared light that light source sends is carried out through chopper and optical filter wheel
It is changed into monochromatic light by monochromator after optical filtering, collimator carries out collimating and then form polarization as the polarizer by polaroid
Light, polarized light vertical incidence, to sample substrate, utilizes Infrared Detectors to receive signal, through preamplifier and lock-in amplifier
After utilize computer analytical data.In test process, monochromator by computer control and feeds back.In test process, first in nothing
Measure the signal intensity of emergent light during sample, then sample is put in light path, test light vertical incidence silicon chip, by rotating sample
Product, it is thus achieved that minimum and maximum signal intensity angle position, are wherein that signal produced by TM light transmission sample is strong during maximum intensity
Degree is TE light during intensity minimum through signal intensity produced by sample, is carried out point by computer software by obtained signal
Analysis.During measurement, wavelength is 3 ~ 5 μm, sets wavelength change and is spaced apart 50nm, and each scanning wavelength samples three times, measures 2 altogether
Secondary, to average as this measurement result, the signal intensity obtained is as shown in Figure 14.Obtained during TM light transmission sample
When the signal intensity obtained and n.s, the ratio of obtained signal intensity is the transmitance (TMT) of TM light, in like manner, TE light transmission
The ratio of the signal intensity obtained when the signal intensity obtained when rate (TET) is by TE light transmission sample and n.s, utilizes
Formula ER=10*log (TMT/TET) calculates the extinction ratio obtaining sample, the sample TM light transmission rate obtained and extinction ratio curve
As shown in Figure 15: silica-based double-level-metal grating has preferable TM ripple transmitance and extinction ratio, and it is in 3 ~ 5um mid-infrared scope
Interior TM ripple transmitance is higher than 75%, and delustring is about 40dB.
Embodiment two
In pixel type many orientations double-layer nanometer grid stroke polariser of plasma primitive, double-layer nanometer grating includes 1, metal level；
2, dielectric grating layer；3, transition zone；4, silicon base；Wherein: dielectric grating layer cycle P=280nm；Dutycycle DC=L1/P=0.6；
Metal layer height H1=80nm；Dielectric grating (silicon dioxide) highly H2=100nm；Transition zone (Afluon (Asta)) thickness H3=200nm.
Its manufacture method of substrate thickness 0.5mm, comprises the steps:
(1) silicon chip to twin polishing is carried out removing the dirty point of substrate surface and greasy dirt so that substrate surface has preferably
Cleannes and adhesion；
(2) Afluon (Asta) utilizing magnetron sputtering plating the most first to plate 200nm plates the silicon dioxide of 100nm again,
(3) spin-coating method is utilized to be coated with last layer electron beam resist PMMA；
(4) electron beam exposure photoetching technique is utilized to carve pixel type many orientation nanos grid photo-etching plastic structure；
(5) use reactive ion etching (RIE) technique etching, then remove residual photoresist and obtain pixel type many orientations medium and receive
Rice grating, etching depth is 100nm；
(6) last electron beam evaporation deposition plates a layer thickness on pixel type many orientations dielectric grating is the aluminum metal of 80nm
Layer, has thus prepared pixel type many orientations double-layer nanometer grid stroke polariser based on plasma primitive.At 3 ~ 5 μm ripples
In section, transmitance is all higher than 65%, and extinction ratio is about 32dB.
Embodiment three
Pixel type many orientations double-layer nanometer grid stroke polariser parameter of plasma primitive is consistent with embodiment one, manufacture method bag
Include following steps:
(1) oxidized silicon chip to twin polishing is carried out removing the dirty point of substrate surface and greasy dirt so that substrate surface has
Preferably cleannes and adhesion；
(2) spin-coating method is utilized to be coated with last layer electron beam resist PMMA；
(3) electron beam exposure photoetching technique is utilized to carve pixel type many orientation nanos grid photo-etching plastic structure；
(4) use reactive ion etching (RIE) technique etching, then remove residual photoresist and obtain pixel type many orientations medium and receive
Rice grating, etching depth is 100nm；
(5) last electron beam evaporation deposition is in the many orientations of pixel type
Plating a layer thickness above dielectric grating is the layer gold of 80nm, has thus prepared pixel type based on plasma primitive
Many orientation double-layer nanometer grid stroke polarisers.In 3 ~ 5 mu m wavebands, transmitance is all higher than 60%, and extinction ratio is about 36dB.
Embodiment four
In pixel type many orientations double-layer nanometer grid stroke polariser of plasma primitive, double-layer nanometer grating includes 1, metal level；
2, dielectric grating layer；3, transition zone；4, silicon base；Wherein: dielectric grating layer cycle P=285nm；Dutycycle DC=L1/P=
0.55；Metal layer height H1=85nm；Dielectric grating (silicon dioxide) highly H2=110nm；Transition zone (silicon dioxide) thickness H3=
190nm.Its manufacture method of substrate thickness 1mm, comprises the steps:
(1) oxidized silicon chip to twin polishing is carried out removing the dirty point of substrate surface and greasy dirt so that substrate surface has
Preferably cleannes and adhesion；
(2) spin-coating method is utilized to be coated with last layer electron beam resist PMMA；
(3) electron beam exposure photoetching technique is utilized to carve pixel type many orientation nanos grid photo-etching plastic structure；
(4) use reactive ion etching (RIE) technique etching, then remove residual photoresist and obtain pixel type many orientations medium and receive
Rice grating, etching depth is 110nm；
(5) last electron beam evaporation deposition plates a layer thickness on pixel type many orientations dielectric grating is the aluminum metal of 85nm
Layer, has thus prepared pixel type many orientations double-layer nanometer grid stroke polariser based on plasma primitive.At 3 ~ 5 μm ripples
In section, transmitance is all higher than 65%, and extinction ratio is about 35dB.
Embodiment five
In pixel type many orientations double-layer nanometer grid stroke polariser of plasma primitive, double-layer nanometer grating includes 1, metal level；
2, dielectric grating layer；3, transition zone；4, silicon base；Wherein: dielectric grating layer cycle P=275nm；Dutycycle DC=L1/P=
0.65；Metal layer height H1=70nm；Dielectric grating (silicon dioxide) highly H2=90nm；Transition zone (silicon dioxide) thickness H3=
210nm.Its manufacture method of substrate thickness 0.8mm, comprises the steps:
(1) oxidized silicon chip to twin polishing is carried out removing the dirty point of substrate surface and greasy dirt so that substrate surface has
Preferably cleannes and adhesion；
(2) spin-coating method is utilized to be coated with last layer electron beam resist PMMA；
(3) electron beam exposure photoetching technique is utilized to carve pixel type many orientation nanos grid photo-etching plastic structure；
(4) use reactive ion etching (RIE) technique etching, then remove residual photoresist and obtain pixel type many orientations medium and receive
Rice grating, etching depth is 90nm；
(5) last electron beam evaporation deposition plates a layer thickness on pixel type many orientations dielectric grating is the aluminum metal of 70nm
Layer, has thus prepared pixel type many orientations double-layer nanometer grid stroke polariser based on plasma primitive.At 3 ~ 5 μm ripples
In section, transmitance is all higher than 60%, and extinction ratio is about 30dB.
Claims (10)
1. pixel type many orientations double-layer nanometer grid stroke polariser based on plasma primitive, it is characterised in that: described base
Pixel type many orientations double-layer nanometer grid stroke polariser in plasma primitive includes substrate, transition zone and pixel layer；Described
Pixel layer is made up of super-pixel building block array；Described super-pixel construction unit include 0 ° of double-layer nanometer grating being orientated, 45 °
The double-layer nanometer grating of orientation, the double-layer nanometer grating of 135 ° of orientations and the double-layer nanometer grating of 90 ° of orientations；Described bilayer is received
Groove and the metal level of convex surfaces that rice grating by dielectric grating and is positioned at dielectric grating form；Described dielectric grating
Cycle is 260nm-300nm, and dutycycle is 0.5-0.7, and thickness is 90nm-110nm；The thickness of described metal level is 70nm-
90nm。
The most according to claim 1, pixel type many orientations double-layer nanometer grid stroke polariser based on plasma primitive, it is special
Levy and be: the thickness of described substrate is 0.5-1mm.
The most according to claim 1, pixel type many orientations double-layer nanometer grid stroke polariser based on plasma primitive, it is special
Levy and be: described matrix is semiconductor base；Described transition zone is silicon dioxide transition zone, Afluon (Asta) transition zone or PMMA mistake
Cross layer；Described transition zone grating is silica dioxide medium grating, Afluon (Asta) dielectric grating or PMMA dielectric grating；Described metal
For aluminum, silver-colored or golden.
The most according to claim 3, pixel type many orientations double-layer nanometer grid stroke polariser based on plasma primitive, it is special
Levy and be: described matrix is silicon base；Described transition zone is silicon dioxide transition zone；Described transition zone grating is that silicon dioxide is situated between
Matter grating；Described metal is aluminum.
The most according to claim 1, pixel type many orientations double-layer nanometer grid stroke polariser based on plasma primitive, it is special
Levy and be: the thickness of described transition zone is 200nm.
The most according to claim 1, pixel type many orientations double-layer nanometer grid stroke polariser based on plasma primitive, it is special
Levying and be: the cycle of described double-layer nanometer grating is P=280nm, dutycycle is 0.6, and thickness is 100nm；The thickness of metal level is
80nm。
The most according to claim 1, pixel type many orientations double-layer nanometer grid stroke polariser based on plasma primitive, it is special
Levy and be: during the service band that described pixel type many orientations double-layer nanometer grid stroke polariser based on plasma primitive is corresponding is
Infrared band.
The most according to claim 1, pixel type many orientations double-layer nanometer grid stroke polariser based on plasma primitive, it is special
Levy and be, utilize photoetching development technology to prepare dielectric grating；Electron beam evaporation deposition technology is utilized to prepare metal level.
9. pixel type many orientations double-layer nanometer grid stroke polariser based on plasma primitive described in claim 1 is at polarization imaging
In application.
10. the preparation side of pixel type many orientations double-layer nanometer grid stroke polariser based on plasma primitive described in claim 1
Method, it is characterised in that comprise the following steps: first, substrate prepares transition zone after cleaning；Then photoetching is utilized on transition zone surface
Developing technique prepares dielectric grating；Finally utilize electron beam evaporation deposition technology to prepare metal level, obtain described based on plasma
Pixel type many orientations double-layer nanometer grid stroke polariser of primitive.
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