CN108897088A - The preparation method of all dielectric ultra-thin two-dimension circular polarization dichroics - Google Patents
The preparation method of all dielectric ultra-thin two-dimension circular polarization dichroics Download PDFInfo
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- G02B5/00—Optical elements other than lenses
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- G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
Abstract
The present invention provides a kind of preparation method of all dielectric ultra-thin two-dimension circular polarization dichroics, the effect for directly generating circularly polarized light and differentiation left-right rotary circularly polarized light can be realized.The structure includes substrate and is covered in the Z-type through-hole etched on substrate in the dielectric layer；The polarizer of the invention is average 70% or more in 1.50 μm of -1.61 mu m waveband circular dichroism, circular dichroism can reach 98.3% at 1.53 μm, and it is wider to have wave band, structure is simple, it is easy to the characteristics of making, in later optical sensor system, advanced nano-photon device and integrated optics system, there is very big application value.
Description
The invention belongs to entitled all dielectric ultra-thin two-dimension circular polarization dichroics and preparation method thereof, application number
It is the divisional application of the June in 2016 of patent application on the 25th for the 201610469385.5, applying date, belongs to preparation method technology department
Point.
Technical field
The present invention relates to optical element technologies of preparing, and in particular to a kind of all dielectric ultra-thin two-dimension circular polarization dichroics
Preparation method.
Background technique
In imaging technique, behaviour is obtained since polarization imaging technology can carry out remote image under rugged environment
Make, has in terms of inhibiting ambient noise, improving detection range, minutia acquisition and the camouflage of target absolutely excellent
Gesture.Therefore, with very extensive application, such as：The detectable target hidden or pretend；Sea and underwater mesh can be achieved
Target detection and identification；The navigation under the conditions of smog climatic environment can be achieved；Effective district parting belongs to and insulator or from luring
Real goal is distinguished in object；It can carry out the medical diagnosis such as cancer, burn；It can be to object features（Such as fingerprint）It is identified；It can
Realize spaceborne or aerial remote sensing；Can also be combined with other technologies, such as multispectral polarized ir imaging, ultraphotic spectrum polarized ir at
As etc..In polarised light imaging technique, circular polarization imaging is weighed extensively because of its unique advantage in bulky grain scattering medium
Depending on.Such as the image quality of circularly polarized light is better than linearly polarized light in the bottom, smog, cloud layer and biological tissue.
It is particularly important that the left-handed dextrorotation of circular polarization is distinguished in optical image technology.Tradition distinguishes the side of left-right rotary circularly polarized light
Method is usually the linearly polarized light for circular polarization being converted to quarter-wave plate different polarization direction, then further according to required
Analyzer filtering is selected in polarization direction.However the applicable band-limited of this method in wave plate bandwidth and also be unfavorable for element
Miniaturization with it is integrated.In recent years, the sub-wavelength structure device containing surface plasma-wave and the technology subject emerging as one,
There are many potential applications in many fields, thus has been to be concerned by more and more people.Currently, many seminars receive in utilization
Rice micro-structure has done a large amount of research work in terms of distinguishing left-right rotary circularly polarized light.In terms of three-D space structure, 2009,
Justyna K. Gansel et al. is proposed and has been made a kind of circularly polarized light analyzer in broadband, i.e., the period in medium substrate
Property placement spiral metal gold thread, by control helix direction of rotation, it can be achieved that left-handed and right-circularly polarized light
Selectivity penetrate.First one layer of deposition is very thin on the glass substrate for they（25nm）Indium tin oxide（ITO）As electrochemistry
The cathode of deposition, is then coated with positive photoresist, is carved spiral of air line by 3D laser direct writing system, places into containing gold
Gold is filled into gap using the method for electrochemical deposition in electrolyte, finally removes photoresist, is obtained in 4um-8um circle two
Color is mild-natured be 70% wideband circular polarization piece.This structure process is complicated, it is difficult to make.2014, Wenshan Cai et al.
The double-deck curved metal (Ag) structure is designed and has made, circular arc-shaped metal knot is respectively set on the different step of height in they
Structure, and it is 35% that maximum circular dichroism is experimentally obtained at 1.4um.2014, E.-B. Kley et al. made 2-D and 3-
D starfish appearance metal（Au）Structure, wherein three-dimensional structure obtains 40% circular dichroism at 660nm.However existing three-dimensional space knot
Structure complex process manufacture difficulty is larger, cannot be compatible with conventional lithographic techniques.2009, Qiwen Zhan et al. proposed one
The left-handed design method with right-circularly polarized light of kind detection, that is, utilize the spiral metal slit for having sub-wavelength line width, to or so
Rounding polarised light forms different focal beam spots outside the exit facet of structure（Speck, blackening）It is inclined to distinguish left and right rounding
Shake light.However this structure can only distinguish left-right rotary circularly polarized light in mode, discrimination is minimum on transmitance energy.
The prior art is there are structure discrimination is low, the disadvantages of effect wave band is narrow, and incompatible with conventional semiconductor processing.
Summary of the invention
The object of the present invention is to provide a kind of design and fabrication method of all dielectric ultra-thin two-dimension circular polarization dichroics,
It can be realized the differentiation to left-right rotary circularly polarized light, and have that wave band is wider, and structure is simple, be easy to the characteristics of making.
To achieve the above object of the invention, the technical solution adopted by the present invention is that：A kind of all dielectric ultra-thin two-dimension circular polarization two
Color device, is made of building block array；The structural unit includes light-transparent substrate and the dielectric layer that is covered in substrate；Institute
Dielectric layer is stated equipped with Z-type through-hole；The Z-type through-hole runs through the upper surface and lower surface of dielectric layer；The vertical arms of the Z-type through-hole
A length of 0.18 μm~0.24 μm, a length of 0.48 μm~0.54 μm of transverse arm, slit width is 0.30 μm~0.33 μm；The dielectric layer
With a thickness of 0.20 μm~0.26 μm；In all dielectric ultra-thin two-dimension circular polarization dichroics, the period of each structural unit
It is 0.97 μm~1.00 μm.
In above-mentioned technical proposal, the light-transparent substrate includes silica light-transparent substrate material, and dielectric layer is silicon, germanium, arsenic
Change the semiconductor materials such as gallium；Preferably, dielectric layer is silicon, and light-transparent substrate is silica.Manufacture craft is more mature, and valence
Lattice are cheap, are easy to obtain.
The invention also discloses a kind of all dielectric ultra-thin two-dimension circular polarization dichroics, are made of building block array；
The structural unit is Silicon-on-insulator；The top silicon layer of the Silicon-on-insulator of the Silicon-on-insulator is equipped with Z-type through-hole；It is described
Z-type through-hole is through the upper surface and lower surface of the top silicon layer of Silicon-on-insulator；A length of 0.18 μm of the vertical arms of the Z-type through-hole
~0.24 μm, a length of 0.48 μm~0.54 μm of transverse arm, slit width is 0.30 μm~0.33 μm；The top silicon layer with a thickness of
0.20 μm~0.26 μm；In all dielectric ultra-thin two-dimension circular polarization dichroics, the period of each structural unit is 0.97 μ
M~1.00 μm.Silicon-on-insulator is the combination of Si layers of+SiO2 middle layer+Si substrate, and according to positional relationship, Si layers are top layer silicon
Layer, it is relatively thin.
In above-mentioned technical proposal, state when positional relationship is practical application, for dielectric layer above light-transparent substrate, Z-type is logical
Hole etches in semiconductor medium layer, and Z-type through-hole cuts through dielectric layer during etching, and Z-type through-hole is above and below dielectric layer
Surface, therefore be through-hole, on the Z-type through-hole, the distance on any two sides is both less than the period of each structural unit, i.e. Z-type
Clear size of opening is less than the structural unit period, and through-hole is less than dielectric layer edge.Z-type through-hole is two-dimentional chiral structure, and hand shape structure is
Refer to that the mirror image of itself can not be overlapped with itself, Z-type through-hole can have to incident left-right rotary circularly polarized light different absorptions,
Reflection and transmission effect, i.e. circular dichroism.Preferably, a length of 0.2 μm of the vertical arms of the Z-type through-hole, a length of 0.5 μ of transverse arm
M, slit width are 0.32 μm, dielectric layer（Top silicon layer）With a thickness of 0.25 μm；The all dielectric ultra-thin two-dimension circular polarization dichroism
In device, the period of each structural unit is 0.98 μm.It is complete since medium is far smaller than metal for the absorption of incident light
Chiral Media structure can reach higher circular dichroism, circular dichroism 1.50 μm of -1.61 mu m waveband it is average 70% with
On, circular dichroism can reach 98.3% at 1.53 μm.
All dielectric ultra-thin two-dimension circular polarization dichroics disclosed by the invention have very strong circular dichroism, to realize
The function that circular polarization state is distinguished；Therefore the invention also discloses above-mentioned all dielectric ultra-thin two-dimension circular polarization dichroics to detect
Application in circularly polarized light.Its corresponding service band is communication band, and the service band can be according to structural parameters
Selection is modulated.
The present invention further discloses above-mentioned all dielectric ultra-thin two-dimension circular polarization dichroics preparation method, methods one：
Firstly, layer of semiconductor dielectric layer is grown on substrate using chemical vapour deposition technique；Then photoetching process is utilized, for example is applied
A upper layer photoresist carves photoresist structure using electron beam exposure developing technique, reuses reactive ion beam technique etching half
Conductive medium layer then removes residual photoresist and obtains all dielectric ultra-thin two-dimension circular polarization dichroics.Method two：It is using
After chemical vapour deposition technique grows semiconductor medium layer, directlys adopt focused-ion-beam lithography technique and obtain circular polarization and be polarized
Device.Also can use focused ion beam direct-write process or photoetching process, that Z-type is prepared in the top silicon layer of Silicon-on-insulator is logical
Hole to get arrive all dielectric ultra-thin two-dimension circular polarization dichroics.Using e-beam direct-writing exposure and develop；Use reactive ion beam
Etch photoresist；Residual photoresist is removed using acetone.
Since above-mentioned technical proposal is used, the present invention has following advantages compared with prior art:
1. there is very strong circular dichroism present invention firstly discloses all dielectric ultra-thin two-dimension circular polarization dichroics, thus
Realize the function that circular polarization state is distinguished, circular dichroism is average 70% or more in 1.50 μm of -1.61 mu m waveband, at 1.53 μm
Circular dichroism can reach 98.3%, achieve unexpected technical effect.
2. all dielectric ultra-thin two-dimension circular polarization dichroics disclosed in this invention are structurally reasonable, are easy to make, Z-type is logical
The dimensional parameters in hole are adjustable, and preparation method and existing semiconductor fabrication process are completely compatible；It is numerous to overcome prior art needs
Trivial preparation process can just obtain the defect of analyzer.
3. all dielectric ultra-thin two-dimension circular polarization dichroics raw material sources disclosed by the invention are wide, preparation is simple, compare
Prior art financial resources, time cost are lower；And have excellent performance, optical sensor system, advanced nano-photon device and
In integrated optics system, there is very big application value.
Detailed description of the invention
Fig. 1 is all dielectric ultra-thin two-dimension circular polarization dichroics of the present invention and structural unit schematic diagram；
Wherein：1, transparent substrates；2, dielectric layer；3, Z-type through-hole；
Fig. 2 is all dielectric ultra-thin two-dimension circular polarization dichroics structural unit schematic view of the front view of embodiment one；
Fig. 3 is all dielectric ultra-thin two-dimension circular polarization dichroics structural unit overlooking structure diagram of embodiment one；
Fig. 4 passes through all dielectric ultra-thin two-dimension circular polarization dichroics by substrate incident for left-right rotary circularly polarized light in embodiment one
Transmittance curve figure；
Fig. 5 passes through all dielectric ultra-thin two-dimension circular polarization dichroics by substrate incident for left-right rotary circularly polarized light in embodiment one
Circular dichroism curve graph；
Fig. 6 passes through all dielectric ultra-thin two-dimension circular polarization dichroics by substrate incident for left-right rotary circularly polarized light in embodiment two
Transmittance curve figure；
Fig. 7 passes through all dielectric ultra-thin two-dimension circular polarization dichroics by substrate incident for left-right rotary circularly polarized light in embodiment two
Circular dichroism curve graph；
Fig. 8 passes through all dielectric ultra-thin two-dimension circular polarization dichroics by substrate incident for left-right rotary circularly polarized light in embodiment three
Transmittance curve figure；
Fig. 9 passes through all dielectric ultra-thin two-dimension circular polarization dichroics by substrate incident for left-right rotary circularly polarized light in embodiment three
Circular dichroism curve graph；
Figure 10 passes through all dielectric ultra-thin two-dimension circular polarization dichroism device by substrate incident for left-right rotary circularly polarized light in example IV
The transmittance curve figure of part；
Figure 11 passes through all dielectric ultra-thin two-dimension circular polarization dichroism device by substrate incident for left-right rotary circularly polarized light in example IV
The circular dichroism curve graph of part.
Specific embodiment
Below with reference to embodiment, attached drawing, the invention will be further described:
Referring to figure 1, all dielectric ultra-thin two-dimension circular polarization dichroics of the invention are made of building block array；Institute
State the dielectric layer 2 that structural unit includes light-transparent substrate 1 Yu is covered in substrate；The dielectric layer is equipped with Z-type through-hole 3；Multiple knots
The combination of structure cell array obtains all dielectric ultra-thin two-dimension circular polarization dichroics.
Embodiment one
It is all dielectric ultra-thin two-dimension circular polarization dichroics structural unit schematic view of the front view, wherein partly leading referring to attached drawing 2
The thickness H of body dielectric layer silicon is 0.25 μm；It is all dielectric ultra-thin two-dimension circular polarization dichroics plan structure referring to attached drawing 3
Schematic diagram, wherein the longitudinal brachium L1 for etching Z-type through-hole in the dielectric layer is 0.2 μm, lateral brachium L2 is 0.5 μm, slit width W
It is 0.32 μm, the period P of each structural unit is 0.98 μm.
Attached drawing 4 passes through above-mentioned all dielectric ultra-thin two-dimension circular polarization two by silica substrate incident for left-right rotary circularly polarized light
The transmittance curve figure of color device；Attached drawing 5 is the circular dichroism curve graph of all dielectric ultra-thin two-dimension circular polarization dichroics.
It is shown in Figure 4, it is had differences in transmitance height of 1.50 μm of -1.61 mu m waveband structure to left-right rotary circularly polarized light.Referring to
It is average 70% or more in 1.50 μm of -1.61 mu m waveband circular dichroism shown in Fig. 5.
The production method of above-mentioned all dielectric ultra-thin two-dimension circular polarization dichroics, includes the following steps：
（1）One layer of silicon semiconductor dielectric layer is grown in silicon dioxide substrates using chemical vapour deposition technique；
（2）A layer photoresist is coated, carves " Z " photoresist structure using electron beam lithography；
（3）Use reactive ion beam technique etching semiconductor dielectric layer；
（4）Acetone removal residual photoresist obtains all dielectric ultra-thin two-dimension circular polarization dichroics.
Embodiment two
Substrate is silica in the present embodiment, and semiconductor medium layer is silicon；Semiconductor medium layer with a thickness of H=0.23 μm, Z
Longitudinal brachium L1 of type through-hole is 0.2 μm, and lateral brachium L2 is 0.5 μm, and slit width is 0.32 μm, and the period of each structural unit is
0.98μm.After growing semiconductor medium layer using chemical vapour deposition technique, focused-ion-beam lithography technique is directlyed adopt
Obtain the circular polarization polarizer.
Attached drawing 6 passes through above-mentioned all dielectric ultra-thin two-dimension circular polarization two by silica substrate incident for left-right rotary circularly polarized light
The transmittance curve figure of color device；Attached drawing 7 is the circular dichroism curve graph of all dielectric ultra-thin two-dimension circular polarization dichroics.
Shown in Figure 6, in transmitance height of 1.48 μm of -1.54 mu m waveband structure to left-right rotary circularly polarized light, there are larger differences.
It is shown in Figure 7,1.53 μm at circular dichroism highest average 80% or more in 1.48 μm of -1.54 mu m waveband circular dichroism
It can reach 98.3%.
Embodiment three
The preparation process and embodiment one of the present embodiment are consistent, and wherein substrate is silica, and semiconductor medium layer is GaAs；
Longitudinal brachium L1 of Z-type through-hole is 0.2 μm, and lateral brachium L2 is 0.5 μm, and slit width is 0.32 μm, and the thickness H of dielectric layer is：
0.25μm.The period of each structural unit is 0.98 μm.
Attached drawing 8 passes through above-mentioned all dielectric ultra-thin two-dimension circular polarization two by silica substrate incident for left-right rotary circularly polarized light
The transmittance curve figure of color device；Attached drawing 9 is the circular dichroism curve graph of all dielectric ultra-thin two-dimension circular polarization dichroics.
Shown in Figure 8, in transmitance of 1.46 μm of -1.56 mu m waveband structure to left-right rotary circularly polarized light, there are larger differences.Referring to
It is average 70% or more in 1.46 μm of -1.56 mu m waveband circular dichroism shown in Fig. 9.
Example IV
Commercial Silicon-on-insulator is selected in the present embodiment preparation, and top layer silicon is with a thickness of 0.22 μm, middle layer silicon dioxide thickness
3.0 μm, bottom silicon degree is 675 μm.Z-type via etch is in top layer silicon, and longitudinal brachium L1 of Z-type through-hole is 0.2 μm, transverse arm
Long L2 is 0.5 μm, and slit width is 0.32 μm, and the thickness H of dielectric layer is：0.22μm.The period of each structural unit is 0.98 μm.
Attached drawing 10 passes through above-mentioned all dielectric ultra-thin two-dimension circular polarization dichroism by silicon base incidence for left-right rotary circularly polarized light
The transmittance curve figure of device；Attached drawing 11 is the circular dichroism curve graph of all dielectric ultra-thin two-dimension circular polarization dichroics.Ginseng
As shown in Figure 10, there are larger differences for the transmitance in 1.45 μm of -1.51 mu m waveband structure to left-right rotary circularly polarized light.Referring to
It is average 70% or more in 1.45 μm of -1.51 mu m waveband circular dichroism shown in Figure 11.
Claims (7)
1. a kind of preparation method of all dielectric ultra-thin two-dimension circular polarization dichroics, which is characterized in that include the following steps：It is first
Semiconductor medium layer is first grown in light-transparent substrate using chemical vapour deposition technique；Then using focused ion beam direct-write process or
Person's photoetching process prepares Z-type through-hole on dielectric layer to get all dielectric ultra-thin two-dimension circular polarization dichroics are arrived；Full Jie
Matter ultra-thin two-dimension circular polarization dichroics are made of building block array；The structural unit includes light-transparent substrate and be covered in
Dielectric layer in light-transparent substrate；The dielectric layer is equipped with Z-type through-hole；Upper surface and following table of the Z-type through-hole through dielectric layer
Face；A length of 0.18 μm~0.24 μm of the vertical arms of the Z-type through-hole, a length of 0.48 μm~0.54 μm of transverse arm, slit width is 0.30 μ
M~0.33 μm；The dielectric layer with a thickness of 0.23 μm~0.26 μm；The all dielectric ultra-thin two-dimension circular polarization dichroics
In, the period of each structural unit is 0.97 μm~1.00 μm.
2. the preparation method of all dielectric ultra-thin two-dimension circular polarization dichroics according to claim 1, it is characterised in that：Institute
Stating light-transparent substrate includes silica substrate；The dielectric layer is semiconductor medium layer.
3. the preparation method of all dielectric ultra-thin two-dimension circular polarization dichroics according to claim 2, it is characterised in that：Institute
Stating semiconductor medium layer includes silicon dielectric layer, indium arsenide dielectric layer or GaAs dielectric layer.
4. the preparation method of all dielectric ultra-thin two-dimension circular polarization dichroics according to claim 1, it is characterised in that：Institute
It states on Z-type through-hole, the distance on any two sides is both less than the period of each structural unit.
5. the preparation method of all dielectric ultra-thin two-dimension circular polarization dichroics according to claim 1, it is characterised in that：Institute
A length of 0.2 μm of vertical arms for stating Z-type through-hole, a length of 0.5 μm of transverse arm, slit width be 0.32 μm, dielectric layer with a thickness of 0.25 μm；
In all dielectric ultra-thin two-dimension circular polarization dichroics, the period of each structural unit is 0.98 μm.
6. a kind of preparation method of all dielectric ultra-thin two-dimension circular polarization dichroics, which is characterized in that utilize focused ion beam
Direct-write process or photoetching process prepare Z-type through-hole in the top silicon layer of Silicon-on-insulator to get all dielectric ultra-thin two-dimension is arrived
Circular polarization dichroics；The all dielectric ultra-thin two-dimension circular polarization dichroics are made of building block array；The knot
Structure unit is Silicon-on-insulator；The top silicon layer of the Silicon-on-insulator is equipped with Z-type through-hole；The Z-type through-hole runs through insulator
The upper surface and lower surface of the top silicon layer of silicon wafer；A length of 0.18 μm~0.24 μm of the vertical arms of the Z-type through-hole, lateral brachium
It is 0.48 μm~0.54 μm, slit width is 0.30 μm~0.33 μm；The top silicon layer of the Silicon-on-insulator with a thickness of 0.20 μm
~0.26 μm；In all dielectric ultra-thin two-dimension circular polarization dichroics, period of each structural unit is 0.97 μm~
1.00μm。
7. the preparation method of all dielectric ultra-thin two-dimension circular polarization dichroics according to claim 6, it is characterised in that：Institute
A length of 0.2 μm of vertical arms for stating Z-type through-hole, a length of 0.5 μm of transverse arm, slit width be 0.32 μm, top silicon layer with a thickness of 0.25 μ
m；In all dielectric ultra-thin two-dimension circular polarization dichroics, the period of each structural unit is 0.98 μm.
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| CN106395738B (en) * | 2016-11-10 | 2018-09-25 | 陕西师范大学 | Adjustable chiral nanostructure of a kind of circular dichroism and preparation method thereof |
| CN108549165A (en) * | 2018-04-28 | 2018-09-18 | 西安柯莱特信息科技有限公司 | A kind of Saint Andrew's cross shape optical polarizator and its adjusting method |
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| CN110007387A (en) * | 2019-04-24 | 2019-07-12 | 金华伏安光电科技有限公司 | A kind of optical texture enhancing circularly polarized light circular dichroism |
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| CN111948750B (en) * | 2020-09-02 | 2022-05-13 | 北京理工大学 | Metamaterial polarization conversion device with chiral optical activity |
| CN112305659B (en) * | 2020-10-13 | 2022-06-17 | 东北石油大学 | Broadband quarter-wave plate based on single-layer anisotropic metamaterial |
| CN112881302A (en) * | 2021-01-25 | 2021-06-01 | 中国科学院上海光学精密机械研究所 | Chiral symmetric structure super-surface circularly polarized light detection element and preparation method thereof |
| CN113589418B (en) * | 2021-08-03 | 2023-03-31 | 上海理工大学 | Circular polarization detection integrated device based on bionics and manufacturing method thereof |
| CN114265140B (en) * | 2021-12-02 | 2023-10-10 | 中国科学院上海光学精密机械研究所 | Super-surface circular polarization device |
| CN114609763B (en) * | 2022-02-25 | 2022-12-23 | 中国科学院西安光学精密机械研究所 | Miniaturized optical lens, imaging device and portable terminal |
| CN114609717B (en) * | 2022-03-21 | 2023-05-02 | 大连理工大学 | Single-layer transmission type circular polarizer suitable for visible light wave band |
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| CN105161857A (en) * | 2015-08-03 | 2015-12-16 | 欧阳征标 | Meta-material film for left-hand circular polarization conversion |
Also Published As
| Publication number | Publication date |
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| CN105954826B (en) | 2018-07-20 |
| CN108897088B (en) | 2020-09-25 |
| CN105954826A (en) | 2016-09-21 |
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