CN108897088B - Preparation method of all-dielectric ultrathin two-dimensional circular polarization dichroism device - Google Patents
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Abstract
The invention provides a preparation method of an all-dielectric ultrathin two-dimensional circular polarization dichroism device, which can realize the functions of directly generating circular polarized light and distinguishing left-handed and right-handed circular polarized light. The structure comprises a substrate and a Z-shaped through hole which is covered on the substrate and etched in a dielectric layer; the circular dichroism of the polarizer is more than 70% on average in the waveband of 1.50-1.61 mu m, the circular dichroism at the position of 1.53 mu m can reach 98.3% at most, and the polarizer has the characteristics of wider waveband, simple structure and easy manufacture, and has great application value in a later optical sensing system, an advanced nano-photonic device and an integrated optical system.
Description
The invention belongs to a full-medium ultrathin two-dimensional circular polarization dichroism device and a preparation method thereof, and divisional application with application number of 201610469385.5 and application date of 2016, 6 and 25, and belongs to the technical part of the preparation method.
Technical Field
The invention relates to a preparation technology of optical elements, in particular to a preparation method of an all-dielectric ultrathin two-dimensional circular polarization dichroic device.
Background
In the imaging technology, the polarization imaging technology can perform remote image acquisition operation in a severe environment, and has absolute advantages in the aspects of inhibiting background noise, improving detection distance, acquiring detail characteristics, identifying target camouflage and the like. Therefore, it has very wide applications, such as: hidden or disguised objects can be detected; the detection and identification of sea surface and underwater targets can be realized; navigation under the smoke climate environment condition can be realized; effectively distinguishing between metal and insulator or distinguishing between real objects from attractants; can be used for medical diagnosis of cancer and burn; the object characteristics (such as fingerprints and the like) can be identified; satellite-borne or airborne remote sensing can be realized; and may also be combined with other techniques such as multispectral polarized infrared imaging, hyperspectral polarized infrared imaging, etc. In polarized light imaging technology, circular polarization imaging is widely regarded for its unique advantages in large particle scattering media. The imaging quality of circularly polarized light is better than that of linearly polarized light in water bottom, smoke, cloud cover and biological tissue.
It is important to distinguish the left and right of circular polarization in optical imaging technology. The traditional method for distinguishing left-handed and right-handed circular polarized light generally uses a quarter wave plate to convert circular polarization into linear polarized light with different polarization directions, and then selects an analyzer for filtering according to the required polarization direction. However, the wavelength band applicable to this method is limited by the bandwidth of the wave plate and is not favorable for miniaturization and integration of the device. In recent years, subwavelength structure devices and technologies containing surface plasmon polariton have been receiving more and more attention as an emerging subject with many potential applications in many fields. Currently, many groups of subjects have made a lot of research work on distinguishing left-handed and right-handed circularly polarized light using nano-microstructures. In the aspect of three-dimensional space structure, in 2009, Justyna k. Gansel et al proposed and fabricated a broadband circularly polarized light analyzer, that is, a spiral-rising metal gold wire was periodically placed on a dielectric substrate, and selective transmission of left-handed and right-handed circularly polarized light was achieved by controlling the rotation direction of the spiral wire. The method comprises the steps of firstly depositing a layer of ultrathin (25 nm) Indium Tin Oxide (ITO) on a glass substrate to serve as a cathode of electrochemical deposition, then coating a positive photoresist, etching a spiral air line by a 3D laser direct writing system, then placing the spiral air line into a gold-containing electrolyte, filling gold into gaps by using an electrochemical deposition method, and finally removing the photoresist to obtain the broadband circular polarizing plate with the 4um-8um circular dichroism of which the average is 70%. This structure is complex in process and difficult to manufacture. In 2014, wenchan Cai et al designed and fabricated double-layer arc metal (Ag) structures, which respectively provided arc metal line structures on steps with different heights, and experimentally obtained maximum circular dichroism at 1.4um of 35%. In 2014, e. -b. Kley et al, made 2-D and 3-D starfish metal (Au) structures in which the three-dimensional structure gave 40% circular dichroism at 660 nm. However, the existing three-dimensional structure has complex process and high manufacturing difficulty, and cannot be compatible with the traditional photoetching technology. In 2009, Qiwen Zhan et al proposed a design method for detecting left-handed and right-handed circularly polarized light, that is, a spiral metal slit with a sub-wavelength line width is used to distinguish left-handed and right-handed circularly polarized light by forming different focusing light spots (bright spots and dark spots) outside the exit surface of the structure. However, this structure can only discriminate left-and right-handed circularly polarized light in a mode, and has a very small discrimination in transmittance energy. The prior art has the defects of low structural discrimination, narrow action wave band, incompatibility with the traditional semiconductor process and the like.
Disclosure of Invention
The invention aims to provide a design and manufacturing method of an all-dielectric ultrathin two-dimensional circular polarization dichroism device, which can realize the distinguishing of left-handed and right-handed circularly polarized light and has the characteristics of wider wave band, simple structure and easy manufacturing.
In order to achieve the purpose of the invention, the technical scheme adopted by the invention is as follows: an all-dielectric ultrathin two-dimensional circular polarization dichroism device comprises a structural unit array; the structural unit comprises a light-transmitting substrate and a dielectric layer covering the substrate; the medium layer is provided with a Z-shaped through hole; the Z-shaped through hole penetrates through the upper surface and the lower surface of the dielectric layer; the longitudinal arm length of the Z-shaped through hole is 0.18-0.24 mu m, the transverse arm length is 0.48-0.54 mu m, and the seam width is 0.30-0.33 mu m; the thickness of the dielectric layer is 0.20-0.26 μm; in the all-dielectric ultrathin two-dimensional circular polarization dichroic device, the period of each structural unit is 0.97-1.00 mu m.
In the technical scheme, the light-transmitting substrate comprises a silicon dioxide light-transmitting substrate material, and the dielectric layer is made of semiconductor materials such as silicon, germanium and gallium arsenide; preferably, the dielectric layer is silicon, and the light-transmitting substrate is silicon dioxide. The manufacturing process is mature, the price is low, and the product is easy to obtain.
The invention also discloses an all-dielectric ultrathin two-dimensional circular polarization dichroism device which consists of the structural unit array; the structural unit is an insulator silicon wafer; a Z-shaped through hole is formed in a top silicon layer of the insulator silicon wafer; the Z-shaped through hole penetrates through the upper surface and the lower surface of the top silicon layer of the silicon-on-insulator wafer; the longitudinal arm length of the Z-shaped through hole is 0.18-0.24 mu m, the transverse arm length is 0.48-0.54 mu m, and the seam width is 0.30-0.33 mu m; the thickness of the top silicon layer is 0.20-0.26 μm; in the all-dielectric ultrathin two-dimensional circular polarization dichroic device, the period of each structural unit is 0.97-1.00 mu m. The silicon wafer is a combination of a Si layer, a SiO2 intermediate layer and a Si substrate, and the Si layer is a top silicon layer and is thinner according to the position relation.
In the above technical solution, the position relationship is a state in practical application, the dielectric layer is above the light-transmitting substrate, the Z-shaped through hole is etched in the semiconductor dielectric layer, the Z-shaped through hole penetrates through the dielectric layer in the etching process, the Z-shaped through hole penetrates through the upper and lower surfaces of the dielectric layer, and thus is a through hole, the distance between any two sides of the Z-shaped through hole is smaller than the period of each structural unit, that is, the size of the Z-shaped through hole is smaller than the period of the structural unit, and the through hole does not reach the edge of the dielectric layer. The Z-shaped through hole is of a two-dimensional chiral structure, the hand-shaped structure means that a mirror image of the Z-shaped through hole cannot coincide with the Z-shaped through hole, and the Z-shaped through hole can have different absorption, reflection and transmission effects on incident left-handed and right-handed circularly polarized light, namely circular dichroism. Preferably, the longitudinal arm length of the Z-shaped through hole is 0.2 μm, the transverse arm length is 0.5 μm, the seam width is 0.32 μm, and the thickness of the dielectric layer (top silicon layer) is 0.25 μm; in the all-dielectric ultrathin two-dimensional circular polarization dichroic device, the period of each structural unit is 0.98 mu m. Because the absorption of the medium to the incident light is far less than that of the metal, the all-dielectric chiral structure can achieve higher circular dichroism, the circular dichroism is more than 70% on average in a wave band of 1.50-1.61 μm, and the circular dichroism can reach 98.3% at the position of 1.53 μm.
The all-dielectric ultrathin two-dimensional circular polarization dichroic device disclosed by the invention has strong circular dichroism, so that the function of distinguishing circular polarization states is realized; therefore, the invention also discloses the application of the all-dielectric ultrathin two-dimensional circular polarization dichroism device in detecting circularly polarized light. The corresponding working wave band is a communication wave band, and the working wave band can be modulated according to the selection of the structural parameters.
The invention further discloses a preparation method of the all-dielectric ultrathin two-dimensional circular polarization dichroism device, which comprises the following steps: firstly, growing a semiconductor medium layer on a substrate by using a chemical vapor deposition method; and then, etching a semiconductor medium layer by using a reactive ion beam process, and then removing residual photoresist to obtain the all-dielectric ultrathin two-dimensional circular polarization dichroism device. The second method comprises the following steps: after a semiconductor medium layer is grown by adopting a chemical vapor deposition method, a circular polarization polarizer is obtained by directly adopting a focused ion beam etching process. And a Z-shaped through hole can be prepared on the top silicon layer of the insulator silicon wafer by utilizing a focused ion beam direct writing process or a photoetching process, so that the all-dielectric ultrathin two-dimensional circular polarization dichroic device is obtained. Adopting electron beam direct writing exposure and developing; etching the photoresist by using reactive ion beams; and removing the residual photoresist by using acetone.
Due to the application of the technical scheme, compared with the prior art, the invention has the following advantages:
1. the invention discloses an all-dielectric ultrathin two-dimensional circular polarization dichroic device for the first time, which has strong circular dichroism, thereby realizing the function of distinguishing circular polarization states, wherein the circular dichroism is more than 70% on average in a wave band of 1.50-1.61 mu m, and the circular dichroism can reach 98.3% at the position of 1.53 mu m, thereby achieving unexpected technical effects.
2. The all-dielectric ultrathin two-dimensional circular polarization dichroism device disclosed by the invention has the advantages of reasonable structure, easiness in manufacturing, adjustable size parameters of the Z-shaped through hole and complete compatibility of the preparation method with the existing semiconductor manufacturing process; the defect that the analyzer can be obtained only by a complicated preparation process in the prior art is overcome.
3. The all-dielectric ultrathin two-dimensional circular polarization dichroism device disclosed by the invention has the advantages of wide raw material source, easiness in preparation and lower financial and time costs compared with the prior art; and the performance is excellent, and the method has great application value in optical sensing systems, advanced nano-photonic devices and integrated optical systems.
Drawings
FIG. 1 is a schematic diagram of an all-dielectric ultrathin two-dimensional circular polarization dichroic device and structural elements of the present invention;
wherein: 1. a transparent substrate; 2. A dielectric layer; 3. a Z-shaped through hole;
FIG. 2 is a schematic front view of a structural unit of the all-dielectric ultrathin two-dimensional circular polarization dichroic device in the first embodiment;
FIG. 3 is a schematic top view of a structural unit of the all-dielectric ultrathin two-dimensional circular polarization dichroic device in the first embodiment;
FIG. 4 is a graph of transmittance of left-handed and right-handed circularly polarized light from a substrate incident through an all-dielectric ultrathin two-dimensional circularly polarized dichroic device according to the first embodiment;
FIG. 5 is a graph of circular dichroism curves of left-and-right-handed circularly polarized light incident from a substrate through an all-dielectric ultrathin two-dimensional circular polarization dichroic device in example one;
FIG. 6 is a graph of transmittance of left-handed and right-handed circularly polarized light from the substrate incident through an all-dielectric ultrathin two-dimensional circularly polarized dichroic device according to example two;
FIG. 7 is a graph of circular dichroism curves of left-and-right-handed circularly polarized light incident from a substrate through an all-dielectric ultrathin two-dimensional circular polarization dichroic device in example two;
FIG. 8 is a graph of transmittance of left-handed and right-handed circularly polarized light from the substrate incident through an all-dielectric ultrathin two-dimensional circularly polarized dichroic device in example III;
FIG. 9 is a graph of circular dichroism curves of left-and-right-handed circularly polarized light incident from a substrate through an all-dielectric ultrathin two-dimensional circular polarization dichroic device in example III;
FIG. 10 is a graph of the transmittance of left-handed and right-handed circularly polarized light from the substrate incident through an all-dielectric ultrathin two-dimensional circularly polarized dichroic device according to example four;
FIG. 11 is a graph of circular dichroism curves of left-and-right-handed circularly polarized light incident from a substrate through an all-dielectric ultrathin two-dimensional circular polarization dichroic device in example four.
Detailed Description
The invention is further described with reference to the following examples and figures:
referring to fig. 1, the all-dielectric ultrathin two-dimensional circular polarization dichroic device of the present invention is composed of an array of structural units; the structural unit comprises a light-transmitting substrate 1 and a dielectric layer 2 covering the substrate; the medium layer is provided with a Z-shaped through hole 3; and combining a plurality of structural unit arrays to obtain the all-dielectric ultrathin two-dimensional circular polarization dichroic device.
Example one
Referring to fig. 2, a schematic diagram of a structural unit of an all-dielectric ultrathin two-dimensional circular polarization dichroism device is shown in a front view, wherein the thickness H of the semiconductor dielectric layer silicon is 0.25 μm; referring to fig. 3, a schematic diagram of a top view structure of an all-dielectric ultrathin two-dimensional circular polarization dichroic device is shown, wherein the longitudinal arm length L1 of a Z-shaped via etched in a dielectric layer is 0.2 μm, the transverse arm length L2 is 0.5 μm, the slit width W is 0.32 μm, and the period P of each structural unit is 0.98 μm.
FIG. 4 is a graph of transmittance of left-handed and right-handed circularly polarized light from a silica substrate through the above all-dielectric ultrathin two-dimensional circularly polarized dichroic device; FIG. 5 is a circular dichroism graph of an all-dielectric ultrathin two-dimensional circular polarization dichroic device. Referring to fig. 4, there is a difference in transmittance of the band structure of 1.50 μm to 1.61 μm to the left-and-right circularly polarized light. As shown in FIG. 5, circular dichroism is more than 70% on average in a wavelength band of 1.50 μm to 1.61. mu.m.
The manufacturing method of the all-dielectric ultrathin two-dimensional circular polarization dichroic device comprises the following steps of:
(1) growing a silicon semiconductor medium layer on the silicon dioxide substrate by using a chemical vapor deposition method;
(2) coating a layer of photoresist, and etching a Z photoresist structure by using an electron beam exposure technology;
(3) etching the semiconductor medium layer by using a reactive ion beam process;
(4) and removing the residual photoresist by using acetone to obtain the all-dielectric ultrathin two-dimensional circular polarization dichroism device.
Example two
In the embodiment, the substrate is silicon dioxide, and the semiconductor medium layer is silicon; the thickness of the semiconductor medium layer is H =0.23 μm, the longitudinal arm length L1 of the Z-shaped through hole is 0.2 μm, the transverse arm length L2 is 0.5 μm, the slit width is 0.32 μm, and the period of each structural unit is 0.98 μm. After a semiconductor medium layer is grown by adopting a chemical vapor deposition method, a circular polarization polarizer is obtained by directly adopting a focused ion beam etching process.
FIG. 6 is a graph of transmittance of left-handed and right-handed circularly polarized light from a silica substrate through the above all-dielectric ultrathin two-dimensional circularly polarized dichroic device; FIG. 7 is a circular dichroism graph of an all-dielectric ultrathin two-dimensional circular polarization dichroic device. Referring to fig. 6, there is a great difference in the transmittance of the band structure of 1.48 μm to 1.54 μm to the left-and-right circularly polarized light. Referring to FIG. 7, the circular dichroism is more than 80% in the wavelength range of 1.48 μm to 1.54 μm on average, and can reach 98.3% at 1.53 μm.
EXAMPLE III
The preparation process of the embodiment is consistent with the embodiment, wherein the substrate is silicon dioxide, and the semiconductor medium layer is gallium arsenide; the longitudinal arm length L1 of the Z-shaped through hole is 0.2 mu m, the transverse arm length L2 is 0.5 mu m, the seam width is 0.32 mu m, and the thickness H of the dielectric layer is as follows: 0.25 μm. The period of each structural unit was 0.98 μm.
FIG. 8 is a graph of transmittance of left-handed and right-handed circularly polarized light from a silica substrate through the above all-dielectric ultrathin two-dimensional circularly polarized dichroic device; FIG. 9 is a circular dichroism plot for an all-dielectric ultrathin two-dimensional circular polarization dichroic device. Referring to fig. 8, there is a large difference in the transmittance of the band structure of 1.46 μm to 1.56 μm to the left-and-right circularly polarized light. As shown in FIG. 9, circular dichroism is more than 70% on average in the wavelength range of 1.46 μm to 1.56. mu.m.
Example four
In this example, a commercial silicon-on-insulator wafer was used for the preparation, with a top silicon thickness of 0.22 μm, a middle silicon dioxide thickness of 3.0 μm, and a bottom silicon thickness of 675 μm. The Z-shaped through hole is etched in the top layer silicon, the longitudinal arm length L1 of the Z-shaped through hole is 0.2 mu m, the transverse arm length L2 is 0.5 mu m, the seam width is 0.32 mu m, and the thickness H of the dielectric layer is as follows: 0.22 μm. The period of each structural unit was 0.98 μm.
FIG. 10 is a graph of transmittance of left-handed and right-handed circularly polarized light incident from a silicon substrate through the all-dielectric ultrathin two-dimensional circularly polarized dichroic device; FIG. 11 is a circular dichroism plot for an all-dielectric ultrathin two-dimensional circular polarization dichroic device. Referring to fig. 10, there is a large difference in transmittance of the band structure of 1.45 μm to 1.51 μm to the left-and-right circularly polarized light. As shown in FIG. 11, circular dichroism is 70% or more in the wavelength range of 1.45 μm to 1.51. mu.m on average.
Claims (7)
1. A preparation method of an all-dielectric ultrathin two-dimensional circular polarization dichroic device is characterized by comprising the following steps: firstly, growing a semiconductor medium layer on a light-transmitting substrate by using a chemical vapor deposition method; then, preparing a Z-shaped through hole on the medium layer by utilizing a focused ion beam direct writing process or a photoetching process to obtain an all-medium ultrathin two-dimensional circular polarization dichroic device; the all-dielectric ultrathin two-dimensional circular polarization dichroic device consists of a structural unit array; the structural unit comprises a light-transmitting substrate and a dielectric layer covering the light-transmitting substrate; the medium layer is provided with a Z-shaped through hole; the Z-shaped through hole penetrates through the upper surface and the lower surface of the dielectric layer; the longitudinal arm length of the Z-shaped through hole is 0.18-0.24 mu m, the transverse arm length is 0.48-0.54 mu m, and the seam width is 0.30-0.33 mu m; the thickness of the dielectric layer is 0.23-0.26 μm; in the all-dielectric ultrathin two-dimensional circular polarization dichroic device, the period of each structural unit is 0.97-1.00 mu m.
2. The method of claim 1, wherein the method comprises the steps of: the light-transmitting substrate includes a silicon dioxide substrate.
3. The method of claim 2, wherein the method comprises the steps of: the semiconductor dielectric layer comprises a silicon dielectric layer, an indium arsenide dielectric layer or a gallium arsenide dielectric layer.
4. The method of claim 1, wherein the method comprises the steps of: and the distance between any two edges of the Z-shaped through hole is smaller than the period of each structural unit.
5. The method of claim 1, wherein the method comprises the steps of: the longitudinal arm length of the Z-shaped through hole is 0.2 mu m, the transverse arm length is 0.5 mu m, the seam width is 0.32 mu m, and the thickness of the dielectric layer is 0.25 mu m; in the all-dielectric ultrathin two-dimensional circular polarization dichroic device, the period of each structural unit is 0.98 mu m.
6. A preparation method of an all-dielectric ultrathin two-dimensional circular polarization dichroism device is characterized in that a Z-shaped through hole is prepared on a top silicon layer of an insulator silicon wafer by utilizing a focused ion beam direct writing process or a photoetching process, and the all-dielectric ultrathin two-dimensional circular polarization dichroism device is obtained; the all-dielectric ultrathin two-dimensional circular polarization dichroic device consists of a structural unit array; the structural unit is an insulator silicon wafer; a Z-shaped through hole is formed in the top silicon layer of the insulator silicon wafer; the Z-shaped through hole penetrates through the upper surface and the lower surface of the top silicon layer of the silicon-on-insulator wafer; the longitudinal arm length of the Z-shaped through hole is 0.18-0.24 mu m, the transverse arm length is 0.48-0.54 mu m, and the seam width is 0.30-0.33 mu m; the thickness of the top silicon layer of the silicon-on-insulator wafer is 0.20-0.26 μm; in the all-dielectric ultrathin two-dimensional circular polarization dichroic device, the period of each structural unit is 0.97-1.00 mu m.
7. The method of claim 6, wherein the method comprises the steps of: the longitudinal arm length of the Z-shaped through hole is 0.2 mu m, the transverse arm length is 0.5 mu m, the seam width is 0.32 mu m, and the thickness of the top silicon layer is 0.25 mu m; in the all-dielectric ultrathin two-dimensional circular polarization dichroic device, the period of each structural unit is 0.98 mu m.
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| CN106395738B (en) * | 2016-11-10 | 2018-09-25 | 陕西师范大学 | Adjustable chiral nanostructure of a kind of circular dichroism and preparation method thereof |
| CN108549126B (en) * | 2018-04-28 | 2021-04-06 | 厦门呈昱实业有限公司 | Nano-film for enhancing asymmetric transmission and preparation method thereof |
| CN108549165A (en) * | 2018-04-28 | 2018-09-18 | 西安柯莱特信息科技有限公司 | A kind of Saint Andrew's cross shape optical polarizator and its adjusting method |
| CN110007387A (en) * | 2019-04-24 | 2019-07-12 | 金华伏安光电科技有限公司 | A kind of optical texture enhancing circularly polarized light circular dichroism |
| CN111624694B (en) * | 2020-05-19 | 2022-04-22 | 惠州市富丽电子有限公司 | Full-automatic production process of polaroid for hole-digging full-face screen |
| CN111948750B (en) * | 2020-09-02 | 2022-05-13 | 北京理工大学 | Metamaterial polarization conversion device with chiral optical activity |
| CN112305659B (en) * | 2020-10-13 | 2022-06-17 | 东北石油大学 | Broadband quarter-wave plate based on single-layer anisotropic metamaterial |
| CN112881302A (en) * | 2021-01-25 | 2021-06-01 | 中国科学院上海光学精密机械研究所 | Chiral symmetric structure super-surface circularly polarized light detection element and preparation method thereof |
| CN113589418B (en) * | 2021-08-03 | 2023-03-31 | 上海理工大学 | Circular polarization detection integrated device based on bionics and manufacturing method thereof |
| CN114265140B (en) * | 2021-12-02 | 2023-10-10 | 中国科学院上海光学精密机械研究所 | Super-surface circular polarization device |
| CN114609763B (en) * | 2022-02-25 | 2022-12-23 | 中国科学院西安光学精密机械研究所 | Miniaturized optical lens, imaging device and portable terminal |
| CN114609717B (en) * | 2022-03-21 | 2023-05-02 | 大连理工大学 | Single-layer transmission type circular polarizer suitable for visible light wave band |
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