CN211122509U - Spectrometer structure and electronic equipment - Google Patents
Spectrometer structure and electronic equipment Download PDFInfo
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- CN211122509U CN211122509U CN201921824428.2U CN201921824428U CN211122509U CN 211122509 U CN211122509 U CN 211122509U CN 201921824428 U CN201921824428 U CN 201921824428U CN 211122509 U CN211122509 U CN 211122509U
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Abstract
The utility model relates to an optical device technical field discloses a spectrum appearance structure and electronic equipment, including the lens, still include: the optical filter is arranged below the lens and used for filtering light with a specific waveband irradiated on the lens; and a light modulation layer disposed below the optical filter, wherein the light of different frequency bands emitted from the optical filter is modulated by the light modulation layer to obtain a modulated spectrum. The spectrometer structure has the advantages of high spectral analysis precision, short scanning time and low cost.
Description
Technical Field
The utility model relates to an optical device technical field especially relates to a spectrum appearance structure and electronic equipment.
Background
Spectrometers (Spectrometers) are scientific instruments that decompose light of complex composition into spectral lines, and are composed of prisms, diffraction gratings, etc., and are used to measure light reflected from the surface of an object. The optical information is captured by a spectrometer, the photographic negative film is developed or the numerical instrument is automatically displayed by a computer for displaying and analyzing, so that what elements are contained in the article can be measured. Spectrometers are widely used in the detection of air pollution, water pollution, food hygiene, metal industry, etc.
The traditional spectrum detection cannot meet the requirements of on-site detection and real-time monitoring due to large volume and limited use environment. The research on the spectrum detection system based on the mobile platform can not only improve the defects of the traditional spectrum detection mode, but also realize the transformation and upgrade of the spectrum detection system to the micro intelligent direction, and has great significance for the development of the modern real-time spectrum detection technology.
In the technical scheme of combining the existing spectrometer and the mobile phone, an additional light splitting module is additionally needed, the existing light splitting module is immature, and the problems of long optical path and complex components exist, so that the light splitting module cannot be smoothly integrated on the existing shooting equipment such as the mobile phone. In addition, the existing light splitting module only has one layer of filter array, the precision of spectral analysis is not enough, and the problem of overlong scanning time exists.
SUMMERY OF THE UTILITY MODEL
Technical problem to be solved
The utility model aims at providing a spectrum appearance structure and electronic equipment to there is the technical problem that spectral analysis precision is low in the beam splitting module who solves among the prior art.
(II) technical scheme
In order to solve the above technical problem, according to the utility model discloses an aspect provides a spectrum appearance structure, including the lens, still include: the optical filter is arranged below the lens and used for filtering light with a specific waveband irradiated on the lens; and a light modulation layer disposed below the optical filter, wherein the light of different frequency bands emitted from the optical filter is modulated by the light modulation layer to obtain a modulated spectrum.
The spectrometer structure further comprises a substrate disposed between the light modulation layer and the optical filter.
Wherein, the light modulation layer is including setting up bottom plate and at least one modulation unit of the lower surface of substrate, each modulation unit all is located on the bottom plate, every be equipped with a plurality of wearing to locate in the modulation unit modulation hole in the bottom plate respectively, it is same each in the modulation unit modulation hole arranges into the two-dimensional graph structure that has first arrangement rule.
Wherein, the first arrangement rule of two-dimensional figure structure includes: all the modulation holes in the same two-dimensional graph structure have the same cross section shape, and the modulation holes are arranged in an array mode according to the gradual change sequence of the size of the structural parameter; and/or each modulation hole in the same two-dimensional graph structure has a corresponding cross section shape, and the modulation holes are combined and arranged according to a second cross section shape.
Wherein the structural parameters of the modulation hole include, but are not limited to, inner diameter, major axis length, minor axis length, rotation angle, side length, or number of angles; the cross-sectional shape of the modulation holes includes, but is not limited to, a circle, an ellipse, a cross, a regular polygon, a star, or a rectangle.
Wherein the light modulation layer is formed on the lower surface of the substrate by deposition or etching.
Wherein the light modulation layer occupies the entire area or a partial area of the lower surface of the substrate.
The optical filters are arranged in different areas of the upper surface of the substrate and different filter layers are deposited, and the optical filters correspond to the modulation units in the light modulation layer below the optical filters.
The spectrometer structure further comprises a CMOS image sensor for imaging and receiving the spectrum modulated by the light modulation layer, wherein the CMOS image sensor is arranged on the lower surface of the light modulation layer; the spectrometer structure further comprises a signal processing circuit for processing signals and reconstructing the differential response to obtain an original spectrum and an image, wherein the signal processing circuit is arranged on the lower surface of the CMOS image sensor.
According to the second aspect of the present invention, there is also provided an electronic device, including the spectrometer structure described above.
(III) advantageous effects
The utility model provides a spectrum appearance structure compares with prior art, has following advantage:
the light is irradiated on the filter by the lens, and the filter can filter out the light with a specific wave band irradiated on the lens and can also filter out infrared light which cannot be identified by human eyes. The light of different frequency bands emitted from the optical filter is modulated through the light modulation layer, the modulation effect includes but is not limited to scattering, absorption, projection, reflection, interference, surface plasmon polariton, resonance and the like of the light, and meanwhile, the difference of spectral response among different areas is improved by utilizing the difference of two-dimensional graph structures in the light modulation layer, and the analysis precision of the spectrometer structure is improved.
Drawings
Fig. 1 is a schematic diagram of an overall explosion structure of a spectrometer structure according to a first embodiment of the present invention;
fig. 2 is a schematic side view of a spectrometer structure according to a first embodiment of the present invention;
FIG. 3 is a schematic diagram of the overall structure of the light modulation layer of FIG. 1;
fig. 4 is a schematic diagram of the overall explosion structure of the spectrometer structure according to the second embodiment of the present invention;
fig. 5 is a schematic side view of a spectrometer structure according to a second embodiment of the present invention;
FIG. 6 is a schematic diagram of the overall structure of the first embodiment of the light modulation layer of FIG. 4;
FIG. 7 is a schematic diagram of the overall structure of a second embodiment of the light modulation layer of FIG. 4;
fig. 8 is a schematic view of the overall structure of the optical filter in fig. 4.
Reference numerals:
1: a lens; 2: an electric motor; 3: an optical filter; 4: a substrate; 5: a light modulation layer; 6: a CMOS image sensor; 7: a signal processing circuit; 8: a modulation unit; 9: preparing holes; 10: a first modulation unit; 11: a second modulation unit; 12: a third modulation unit; 13: a fourth modulation unit; 14: a fifth modulation unit; 15: a blank cell; 16: and a filtering unit.
Detailed Description
The following detailed description of the embodiments of the present invention is provided with reference to the accompanying drawings and examples. The following examples are intended to illustrate the invention, but are not intended to limit the scope of the invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", and the like, indicate the orientation or positional relationship indicated based on the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," and "fixed" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.
In the present application, unless expressly stated or limited otherwise, the first feature may be directly on or directly under the second feature or indirectly via intermediate members. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
As shown in fig. 1 to 8, the spectrometer structure is schematically shown to include a lens 1, a filter 3 and a light modulation layer 5. The spectrometer structure of the present application can be integrated on the lens of a cell phone, camera, or other electronic device with a shooting function.
In the embodiment of the present application, the lens 1 is used for receiving incident light and imaging an object.
The optical filter 3 is arranged below the lens 1 and used for filtering light with a specific waveband irradiated on the lens 1, so as to realize spectral analysis and high-quality imaging with different wavebands. The light of the specific wavelength band may be light that transmits 800nm (nanometers) or less.
The light modulation layer 5 is disposed below the optical filter 3, wherein light of different frequency bands emitted from the optical filter 3 is modulated by the light modulation layer 5 to obtain a modulated spectrum. Specifically, light is irradiated on the filter 3 via the lens 1. The light of different frequency bands emitted from the optical filter 3 is modulated by the light modulation layer 5, the modulation effects include but are not limited to scattering, absorption, projection, reflection, interference, surface plasmon polariton, resonance and the like of the light, and meanwhile, the difference of spectral response among different areas is improved by utilizing the difference of two-dimensional graph structures in the light modulation layer 5, and the analysis precision of the spectrometer structure is improved.
In the embodiment of the present application, the optical filter 3 can filter out light of a specific wavelength band irradiated on the lens 1, and can also filter out infrared light that cannot be recognized by human eyes.
The spectrometer structure further comprises a motor 2 for controlling the movement of the lens 1, i.e. adjusting the distance between the lens 1 and the filter 3, to achieve high quality imaging. It should be noted that, since the structure and the operation principle of the electric motor 2 are well known to those skilled in the art, the details are not described herein for the sake of brevity.
In the embodiment of the application, can integrate the spectrum appearance structure in the required little volume in the cell-phone camera lens module, also can realize the spectral analysis function on the basis of not losing original imaging function, utilize spectral information to improve image quality and have the advantage that the integrated level is high.
In a preferred embodiment of the present application, the spectrometer structure further comprises a substrate 4 disposed between the light modulation layer 5 and the filter 3, as shown in fig. 4 and 5.
In another preferred embodiment of the present application, the light modulation layer 5 includes a bottom plate (not shown in the drawings) disposed on the lower surface of the substrate 4 and at least one modulation unit 8, each modulation unit 8 is disposed on the bottom plate, a plurality of modulation holes 9 penetrating the bottom plate are respectively disposed in each modulation unit 8, and the modulation holes 9 in the same modulation unit 8 are arranged in a two-dimensional pattern structure with a first arrangement rule. Specifically, the modulation effect on light with different wavelengths is realized by using different two-dimensional graph structures, the modulation effect includes, but is not limited to, the effects of scattering, absorption, projection, reflection, interference, surface plasmon polariton, resonance and the like of light, and the difference of spectral response between different areas can be improved by using the difference of the two-dimensional graph structures, so that the analysis accuracy of the spectrometer is improved.
As shown in fig. 6, five modulation units 8, namely, a first modulation unit 10, a second modulation unit 11, a third modulation unit 12, a fourth modulation unit 13, and a fifth modulation unit 14, are distributed on the bottom plate of the light modulation layer 5 in the present embodiment, wherein the range of the fifth modulation unit 14 is the largest, and the area of the fifth modulation unit is not smaller than the sum of the first four modulation units.
The arrangement order of the modulation holes 9 in the first modulation unit 10, the second modulation unit 11, and the third modulation unit 12 is arranged row by row or column by column according to a preset period order. The specific cross-sectional shapes of the modulation holes 9 in the modulation units 8 are different from each other. The modulation holes 9 in the same modulation unit 8 have the same specific cross-sectional shape, but the arrangement sequence of the modulation holes 9 is arranged in an array form according to the size gradient sequence of the structural parameters, so that each modulation unit 8 has different modulation effects and can modulate the spectrums with different wavelengths. The modulation action and/or modulation object of the current modulation unit 8 can be changed by changing the gradient sequence of the structural parameters of the modulation holes 9 in the modulation unit 8 and/or the specific section shape of the modulation holes 9 according to modulation requirements.
The specific cross-sectional shapes of the modulation holes 9 of the fourth modulation unit 13 and the first modulation unit 10 are the same and are both circular, but the structural parameters of the modulation holes 9 of the fourth modulation unit 13 are different from the structural parameters of the modulation holes 9 of the first modulation unit 10, specifically: the inner diameter of the modulation aperture 9 of the fourth modulation means 13 is smaller than the inner diameter of the modulation aperture 9 of the first modulation means 10, whereby the fourth modulation means 13 has a fourth modulation scheme for the input spectrum. The first modulation unit 10, the second modulation unit 11, the third modulation unit 12, and the fourth modulation unit 13 are arranged in a matrix form as a whole.
All the modulation holes 9 in the fifth modulation unit 14 have the same specific cross-sectional shape, for example an oval shape. All the modulation holes 9 are arranged in an array form according to the size gradient sequence of the structural parameters and form a two-dimensional graph structure. In the two-dimensional graph structure, all the modulation holes 9 are arranged in an array, and all the modulation holes 9 are arranged row by row according to the length of the long axis, the length of the short axis, and the rotation angle from small to large, so that the fifth modulation unit 14 is formed by the whole modulation holes 9, and the fifth modulation unit 14 has a fifth modulation mode for the input spectrum.
It is understood that the "some modulation of light with different wavelengths" described in this embodiment may include, but is not limited to, scattering, absorption, transmission, reflection, interference, surface plasmon, resonance, and the like. The first, second, third, fourth and fifth light modulation modes are distinguished from each other. By arranging the structure of the modulation holes 9 in the modulation cells 8, the difference of spectral response between different cells can be improved, and the sensitivity to the difference between different spectra can be improved by increasing the number of cells.
It will be appreciated that when measurements are made for different incident spectra, the modulation effect can be varied by varying the structural parameters of the modulation holes 9 in each modulation unit 8, including but not limited to one or any combination of the parameters of period, radius, side length, duty cycle and thickness of the micro-nano structure in the light modulation layer 5.
The structure of the fifth modulation unit 14 will be specifically described below.
All the modulation holes 9 of the fifth modulation unit 14 are arranged according to the same arrangement rule, that is, the modulation holes 9 are gradually arranged row by row from small to large according to the structural parameters of the length of the long axis, the length of the short axis and the rotation angle, so that all the modulation holes 9 on the modulation unit 8 can be regarded as an integral modulation unit 8, and can also be arbitrarily divided into a plurality of modulation units 8, and the arbitrarily divided modulation units 8 have different modulation effects on the spectrum, and theoretically, infinite groups of modulated spectrum samples can be obtained, thereby sharply increasing the data amount for reconstructing the original spectrum, and facilitating the recovery of the spectrum pattern of the broadband spectrum. The effect of the modulation of light of different wavelengths by each modulation cell 8 may be determined by the characteristics of the structural parameters of the modulation aperture 9 in that modulation cell 8.
It is understood that the specific cross-sectional shape of the modulation hole 9 includes, but is not limited to, circular, oval, cross, regular polygon, star or rectangle, and the like, and any combination of the above shapes can be used. The structural parameters of the modulation hole 9 include, but are not limited to, inner diameter, major axis length, minor axis length, rotation angle, number of corners or side length, etc.
In this embodiment, all the modulation holes 9 on the fifth modulation unit 14 are elliptical, the lengths of the major axes and the minor axes of all the elliptical modulation holes 9 are respectively increased row by row, and taking the horizontal direction as the horizontal axis and the vertical direction as the vertical axis in fig. 6, all the elliptical modulation holes 9 are rotated row by row from the vertical axis to the horizontal axis, and the rotation angle thereof is gradually increased. All the modulation holes 9 constitute an integral two-dimensional pattern structure which is integrally a matrix structure having an area in the range of 5 μm2～4cm2. The two-dimensional graph structure specifically comprises: only the minor axis and the rotation angle of the elliptical modulation hole 9 are gradually adjusted, and the major axis of the ellipse is a constant value from 200nm (nanometer) to 1000nm (nanometer), such as 500nm (nanometer); the length of the minor axis is 120nm to 500nmMeter), the rotation angle of the ellipse varies in the range of 0 to 90 °, and the arrangement period of the ellipse is a constant value in the range of 200nm (nanometer) to 1000nm (nanometer), for example, 500nm (nanometer). The overall pattern range of the two-dimensional pattern structure is about a rectangular array structure having a length of 115 μm (micrometers) and a width of 110 μm (micrometers).
Therefore, in the light modulation micro-nano structure of the embodiment, different modulation effects on spectra with different wavelengths are realized by changing the specific cross-sectional shapes of the modulation holes 9, the structural parameters of the modulation holes 9 and the arrangement period of the modulation holes 9 by using the difference of the specific cross-sectional shapes of the different modulation holes 9 among different units and the arrangement mode of the specific modulation holes 9 in the same unit.
The light modulation micro-nano structure capable of modulating light in the embodiment includes, but is not limited to, one-dimensional and two-dimensional photonic crystals, surface plasmons, metamaterials and super surfaces. Specific materials may include silicon, germanium, silicon germanium materials, compounds of silicon, compounds of germanium, metals, group III-V materials, and the like. The silicon compound includes, but is not limited to, silicon nitride, silicon dioxide, silicon carbide, and the like.
In the preparation of the light modulation layer 5, the light modulation layer 5 may be formed directly on the lower surface of the substrate 4, or the prepared light modulation layer 5 may be transferred to the lower surface of the substrate 4 first.
The process of producing the light modulation layer 5 directly on the lower surface of the substrate 4 is: in the first step, a silicon plate having a thickness of 100nm (nanometers) to 400nm (nanometers) is deposited on the lower surface of the substrate 4 by sputtering, chemical vapor deposition, or the like. And secondly, drawing a required two-dimensional graph structure on the graph by using a graph transfer method such as photoetching, electron beam exposure and the like. And thirdly, etching the silicon flat plate by methods of reactive ion etching, inductively coupled plasma etching, ion beam etching and the like to obtain the required light modulation layer 5.
The transfer preparation method of the light modulation layer 5 specifically includes: the light modulation layer 5 is prepared on a silicon wafer or an SOI (silicon-on-insulator-silicon wafer structure) according to designed structural parameters, and then transferred onto the lower surface of the substrate 4 by a transfer method.
In this embodiment, the light modulation layer 5 occupies the entire area of the lower surface of the substrate 4, covering all the pixels of the CMOS (complementary metal oxide semiconductor) image sensor 6.
In this embodiment, the filter 3 allows only light of a specific wavelength band to pass, for example, only visible light to pass.
The substrate 4 is interposed between the optical filter 3 and the light modulation layer 5. The light modulation layer 5 is provided with a light modulation micro-nano structure for performing light modulation on incident light to obtain a modulated spectrum. The CMOS image sensor 6 is used to image and receive the modulated spectrum and provide a differential response to the modulated spectrum. The signal processing circuit 7 is used for signal processing and reconstructing the differential response to obtain an original spectrum and an image.
As shown in fig. 7, in this embodiment, the light modulation micro-nano structure on the light modulation layer 5 only occupies a partial area of the lower surface of the substrate 4, and a partial area (pixel point) is left for imaging, so that imaging and spectral analysis functions can be simultaneously realized in one camera module
In an embodiment of the present application, the structure, the principle, the spectrum modulation method, and the manufacturing method of the light modulation micro-nano structure and the spectrometer integrated on the lens of the mobile phone described in this embodiment are substantially the same as those of the previous embodiment, and for the sake of brevity, the description of the same parts is omitted. The difference lies in that: the light modulation layer 5 includes a plurality of modulation cells 8 and blank cells 15, the specific cross-sectional shapes of the modulation holes 9 in each modulation cell 8 are different from each other, the modulation holes 9 in the same modulation cell 8 have the same specific cross-sectional shape, and the specific cross-sectional shape of the modulation hole 9 includes, but is not limited to, a circle, an ellipse, a cross, a regular polygon, a star, a rectangle, and the like, and may be any combination of the above shapes.
The structural parameters of the modulation hole 9 include, but are not limited to, inner diameter, major axis length, minor axis length, rotation angle, number of corners or side length, etc. Each modulation unit 8 has a different modulation effect and can modulate for spectra of different wavelengths. The modulation action and/or modulation object of the current modulation unit 8 can be changed by changing the gradient sequence of the structural parameters of the modulation holes 9 in the modulation unit 8 and/or the specific section shape of the modulation holes 9 according to modulation requirements.
The arrangement and combination of the modulation units 8 and the blank units 15 are various, and the present embodiment only schematically shows one arrangement and combination (see fig. 7 in particular).
In the embodiment of the present application, the spectrometer structure further includes a CMOS image sensor 6 for imaging and receiving the spectrum modulated by the light modulation layer 5, and the CMOS image sensor 6 is disposed on the lower surface of the light modulation layer 5. The arrangement of the optical filter 3 can also reduce the interference of light in a frequency band required by non-imaging on the CMOS image sensor 6, and improve the imaging quality.
In the preferred embodiment of the present application, the spectrometer structure further includes a signal processing circuit 7 for signal processing and reconstructing the differential response to obtain the original spectrum and image, and the signal processing circuit 7 is disposed on the lower surface of the CMOS image sensor 6.
As shown in fig. 8, the optical filter 3 described in this embodiment includes a plurality of filtering units 16, each filtering unit 16 can be designed to generate a filtering effect for light in different wavelength bands according to actual requirements, and corresponds to a micro-nano structure in the lower light modulation layer 5, so as to improve the precision of spectral analysis in a certain wavelength band, and implement spectral analysis in different wavelength bands, for example, the filtering unit can be designed to pass only a filtering wavelength band (520nm to 600nm), pass only a red light wavelength band (600nm to 730nm), and correspond to the micro-nano structure in the lower light modulation layer 5, and mainly design for the response of light in a corresponding wavelength band, so that the spectral analysis precision in a corresponding wavelength band is further improved, and high-precision analysis of a spectrum is implemented by a plurality of units. The structural parameters of the filter unit 16 can be designed. The micro-nano structure on the light modulation layer 5 can be correspondingly designed according to different filtering wave bands.
As shown in fig. 1 and fig. 2, in the embodiment, the structure of the substrate 4 is removed, and when the light modulation layer 5 is prepared, the light modulation layer 5 may be directly formed on the lower surface of the optical filter 3, or the prepared light modulation layer 5 may be transferred to the lower surface of the optical filter 3, and for the sake of brevity, the same process flow as that of the above embodiment is not repeated.
As shown in fig. 3, in the micro-nano structure of this embodiment, an integral modulation unit 8 is disposed on the light modulation layer 5. The modulation holes 9 in the two-dimensional pattern structure provided in the modulation unit 8 have respective specific cross-sectional shapes, and the modulation holes 9 are freely combined and arranged in accordance with the specific cross-sectional shapes. Specifically, in the two-dimensional pattern structure, the specific cross-sectional shapes of some of the modulation holes 9 are the same, and the modulation holes 9 having the same specific cross-sectional shape constitute a plurality of modulation hole groups, the specific cross-sectional shapes of the modulation hole groups are different from each other, and all the modulation holes 9 are freely combined.
It will be appreciated that the modulation unit 8 as a whole can be regarded as modulating for a spectrum of one specific wavelength, and it can also be freely divided into modulation units 8 with several modulation apertures 9, so that it can modulate for spectra of many different wavelengths to increase the flexibility and diversity of light modulation.
In summary, the micro-nano structure is prepared on the lower surface of the optical filter 3 to realize the light splitting function of spectral analysis, and the spectral analysis function is integrated into a mobile phone under the condition that the size of a camera module is not increased.
The micro-nano structure can occupy part or all of the area of the optical filter 3, and a part of areas (pixel points) can be vacated, so that the imaging and spectral analysis functions can be simultaneously realized in one camera module, the white balance is adjusted through spectral analysis, the imaging quality is improved, the identification and the preliminary calibration of objects of the spectral analysis can also be carried out through imaging, and the precision of the spectral analysis is further improved.
Different filter layers can be deposited in different areas on the upper surface (close to the lens group) of the optical filter 3, and the filter layers correspond to the micro-nano structure below the optical filter so as to filter signals of other wave bands, improve the precision of spectral analysis of a certain wave band and realize spectral analysis of sub-wave bands.
Silicon base and Si can be selected3N4The preparation of devices of (silicon nitride) and III-V group semiconductors can be realized by batch preparation through the existing micro-nano processing technology, large-area and multiple devices can be prepared at one time, and the technology is matureHigher degree and lower cost.
In addition, different two-dimensional structure diagrams and particle sizes of the fine structure can be designed by accurately controlling the growth and etching processes of the micro-nano structure material, so that the measurement wavelength range and the precision of the spectrograph can be realized. In addition, the technical parameters for controlling the functions of the original camera can be realized by designing different two-dimensional structures on the lower surface of the optical filter.
The CMOS image sensor 6 receives signals of the whole imaging surface at the same time, so that the problem of long response time of a scanning spectrometer is solved.
The above description is only a preferred embodiment of the present invention, and should not be taken as limiting the invention, and any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A spectrometer arrangement comprising a lens, characterized in that it further comprises:
the optical filter is arranged below the lens and used for filtering light with a specific waveband irradiated on the lens; and
and the light modulation layer is arranged below the optical filter, and the light of different frequency bands emitted from the optical filter is modulated by the light modulation layer to obtain a modulated spectrum.
2. The spectrometer structure of claim 1, further comprising a substrate disposed between the light modulation layer and the filter.
3. The spectrometer structure of claim 2, wherein the light modulation layer comprises a bottom plate disposed on the lower surface of the substrate and at least one modulation unit, each modulation unit is disposed on the bottom plate, a plurality of modulation holes penetrating the bottom plate are disposed in each modulation unit, and the modulation holes in the same modulation unit are arranged in a two-dimensional pattern structure having a first arrangement rule.
4. The spectrometer arrangement according to claim 3, wherein the first arrangement rule of the two-dimensional pattern structure comprises:
all the modulation holes in the same two-dimensional graph structure have the same cross section shape, and the modulation holes are arranged in an array mode according to the gradual change sequence of the size of the structural parameter; and/or
And each modulation hole in the same two-dimensional graph structure has a corresponding cross section shape, and the modulation holes are combined and arranged according to a second cross section shape.
5. The spectrometer structure according to claim 4, wherein the structural parameters of the modulation aperture comprise an inner diameter, a length of a long axis, a length of a short axis, a rotation angle, a side length, or a number of angles; the cross-sectional shape of the modulation hole comprises a circle, an ellipse, a cross, a regular polygon, a star or a rectangle.
6. The spectrometer structure of claim 2, wherein the light modulation layer is formed on the lower surface of the substrate by deposition or etching.
7. The spectrometer structure of claim 2, wherein the light modulation layer occupies all or part of the area of the lower surface of the substrate.
8. The spectrometer structure of claim 3, wherein the optical filters are disposed at different areas of the upper surface of the substrate and deposit different filter layers corresponding to each of the modulation cells in the underlying light modulation layer.
9. The spectrometer structure of claim 1, further comprising a CMOS image sensor for imaging and receiving the spectrum modulated by the light modulation layer, the CMOS image sensor being disposed on a lower surface of the light modulation layer;
the spectrometer structure further comprises a signal processing circuit for processing signals and reconstructing the differential response to obtain an original spectrum and an image, wherein the signal processing circuit is arranged on the lower surface of the CMOS image sensor.
10. An electronic device comprising a spectrometer arrangement according to any of claims 1 to 9.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112135028A (en) * | 2020-09-25 | 2020-12-25 | Oppo（重庆）智能科技有限公司 | Image sensor, imaging module and electronic device |
| WO2022033353A1 (en) * | 2020-08-14 | 2022-02-17 | 清华大学 | Miniature spectrum chip based on units of different shapes, and method for generating micro-nano structure array in miniature spectrum chip |
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2019
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022033353A1 (en) * | 2020-08-14 | 2022-02-17 | 清华大学 | Miniature spectrum chip based on units of different shapes, and method for generating micro-nano structure array in miniature spectrum chip |
| CN112135028A (en) * | 2020-09-25 | 2020-12-25 | Oppo（重庆）智能科技有限公司 | Image sensor, imaging module and electronic device |
| WO2022062589A1 (en) * | 2020-09-25 | 2022-03-31 | Oppo广东移动通信有限公司 | Image sensor, imaging module and electronic device |
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