CN105899569B - 半导体密封用液体环氧树脂组合物和树脂密封半导体装置 - Google Patents
半导体密封用液体环氧树脂组合物和树脂密封半导体装置 Download PDFInfo
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- CN105899569B CN105899569B CN201480072633.1A CN201480072633A CN105899569B CN 105899569 B CN105899569 B CN 105899569B CN 201480072633 A CN201480072633 A CN 201480072633A CN 105899569 B CN105899569 B CN 105899569B
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
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Abstract
本发明涉及半导体密封用液体环氧树脂组合物,其含有:(A)在分子中不含硅氧烷键的液体环氧树脂,(B)酸酐系固化剂,(C)表面处理球状无机填充材料,其中,作为无机填充材料,为采用激光衍射法测定的平均粒径0.1~10μm的球状无机填充材料,其表面用(甲基)丙烯酸系官能性硅烷偶联剂、相对于(C)成分的球状无机填充材料100质量份以0.5~2.0质量份的比例进行了表面处理,(D)固化促进剂,根据本发明,能够给予耐热性、耐湿性优异的半导体装置。
Description
技术领域
本发明涉及半导体密封用液体环氧树脂组合物、以及用该树脂组合物的固化物密封的半导体装置和树脂密封型半导体装置的制造方法。
背景技术
近年来,半导体装置迎来了显著的技术革新。
智能手机、平板电脑等便携信息、通信终端为了能够高速地处理大容量的信息,使用TSV(穿透硅通孔)技术对半导体元件进行多层连接,与8英寸乃至12英寸的硅内插器倒装芯片连接后,通过热固化树脂,连带搭载了多个多层连接的半导体元件的内插器一起进行密封。将半导体元件上的不需要的固化树脂研磨后,形成单片,能够得到薄型、小型、多功能且可高速处理的半导体装置。
使用了8英寸左右的小直径晶片等基板的情况下,即使是现状也不存在大的问题地能够密封成型,但如果是12英寸以上的直径,由于密封后环氧树脂等的收缩应力大,因此产生半导体元件从金属等的基板剥离的问题,不能大量生产。为了解决与晶片、金属基板的大口径化相伴的上述这样的问题,需要填充90质量%以上的填料、通过树脂的低弹性化来减小固化时的收缩应力。
但是,在硅内插器上将热固化树脂全面密封的情况下,由于硅与热固化性树脂的热膨胀系数的不同,产生大的翘曲。如果翘曲大,则不能应用于其后的研磨工序、形成单片的工序,成为了大的技术课题。
另外,近年来,伴随半导体元件的层叠化,密封层变厚,因此对密封的树脂层进行研磨而制成薄型的半导体装置逐渐成为了主流。对密封的树脂层进行研磨时,如果使用填充90质量%以上的填料的密封材料,则切割装置的刀片容易损伤,更换频率高,成为了高成本的原因。另外,由于必须提高抛光压力进行研磨,因此产生了半导体元件损伤、或晶片自身开裂的问题。另一方面,对于以往的有机硅化合物为代表的低弹性树脂的材料,由于树脂柔软,因此产生了在研磨时发生树脂堵塞、产生树脂开裂的问题。
应予说明,作为与本发明关联的背景技术,可列举下述的专利文献。
现有技术文献
专利文献
专利文献1:日本特开2008-266512号公报
专利文献2:国际公开第2009/142065号
专利文献3:日本特开2012-149111号公报
发明内容
发明要解决的课题
本发明鉴于上述实际情况而完成,目的在于提供流动性优异、固化时的翘曲减轻、同时给予可靠性高的固化物的半导体密封用液体环氧树脂组合物、用其固化物密封了的半导体装置、以及树脂密封型半导体装置的制造方法。
用于解决课题的手段
本发明人为了实现上述目的反复深入研究,结果发现:使用了使用特定的填料表面处理材料进行了表面处理的球状无机填充材料的液体环氧树脂组合物在将半导体装置密封的情况下,耐水性、研磨性良好,即使使用大型晶片进行密封,流动性也优异,翘曲减轻,常常通用性高,完成了本发明。
因此,本发明提供下述的半导体密封用液体环氧树脂组合物、半导体装置、和树脂密封型半导体装置的制造方法。
[1]半导体密封用液体环氧树脂组合物,其特征在于,含有:
(A)在分子中不含硅氧烷键的液体环氧树脂;
(B)酸酐系固化剂;
(C)表面处理球状无机填充材料:相对于(A)、(B)成分的合计100质量份,为600~1,000质量份,其中,作为无机填充材料,为用激光衍射法测定的平均粒径0.1~10μm的球状无机填充材料,其表面用由下述式(1)表示的(甲基)丙烯酸系官能性硅烷偶联剂、以相对于(C)成分的球状无机填充材料100质量份为0.5~2.0质量份的比例进行了表面处理;
[化1]
[式中,a为0~3的整数,R1为碳原子数1~4的1价饱和烃基,R2为碳原子数1~10的2价饱和烃基,R3为单键或碳原子数1~10的2价饱和烃基,R4为氢原子或甲基,A为单键或由下述式
[化2]
(式中,R5为碳原子数1~4的1价饱和烃基,B为O或S。)
[化3]
(式中,R6为碳原子数1~4的1价饱和烃基。)
表示的任一个基团。]
(D)固化促进剂。
[2][1]所述的液体环氧树脂组合物,其中,(A)成分为选自双酚A型环氧树脂、双酚F型环氧树脂、萘型环氧树脂、脂环式环氧树脂和由下述式
[化4]
表示的环氧树脂中的1种以上。
[3][1]或[2]所述的半导体密封用液体环氧树脂组合物,其中,(B)成分为选自由下述式表示的酸酐中的1种以上。
[化5]
(式中,Me表示甲基,i-Pr表示异丙基。)
[4][1]~[3]的任一项所述的液体环氧树脂组合物,其中,相对于(A)成分100质量份,配合了1~50质量份的由下述平均组成式(2)
[化6]
(式中,R7为氢原子或碳原子数1~4的烷基,R8为碳原子数1~4的烷基,Q为碳原子数3~6的亚烷基、氧亚烷基、或羟基氧亚烷基,r为4~199的整数,p为1~10的整数,q为1~10的整数。)
表示的有机硅改性环氧树脂。
[5][1]~[4]的任一项所述的液体环氧树脂组合物,其中,(D)成分为选自磷系化合物、叔胺化合物、咪唑化合物中的1种以上,其量相对于(A)和(B)成分的合计100质量份,为0.1~15质量份。
[6][5]所述的液体环氧树脂组合物,其中,(D)成分为选自三苯基膦、三丁基膦、三(对-甲基苯基)膦、三(壬基苯基)膦、三苯基膦·三苯基硼烷、四苯基膦·四苯基硼酸盐、三乙胺、苄基二甲基胺、α-甲基苄基二甲基胺、1,8-二氮杂双环[5.4.0]十一碳烯-7、2-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑中的1种以上。
[7][1]~[6]的任一项所述的液体环氧树脂组合物,其中,采用JISK7117-1中记载的方法测定的25℃下的粘度为5~1000Pa·s。
[8]用[1]~[7]的任一项所述的液体环氧树脂组合物的固化物密封了的半导体装置。
[9]树脂密封型半导体装置的制造方法,其为树脂密封型半导体装置的制造方法,其特征在于,将形成了一个以上的半导体元件的硅晶片或基板全体用半导体密封用环氧树脂组合物的固化物总括密封时,在形成了一个以上的半导体元件的硅晶片或基板的单面在挤压下覆盖[1]~[7]的任一项所述的半导体密封用液体环氧树脂组合物,或者在真空气氛下进行减压覆盖,将该树脂组合物加热固化而将半导体元件密封,然后,通过对固化树脂层进行研磨加工、切割而形成单片。
[10][9]所述的树脂密封型半导体装置的制造方法,其特征在于,使用直径12英寸以上20英寸以下的硅晶片。
发明的效果
根据本发明的半导体密封用液体环氧树脂组合物,即使对将一个以上的半导体元件用粘接剂(管芯接合剂)在无机基板、金属基板或有机基板上搭载的半导体元件阵列、形成了半导体元件的大径的硅晶片进行密封,也几乎不发生加热固化后冷却时的翘曲,并且能够给予耐热性、耐湿性优异的半导体装置,并且可以在晶片水平上进行统一密封且能够容易地对密封树脂进行研磨、切割。
附图说明
图1为表示玻璃化转变温度以下及以上的线膨胀率的求取方法的说明图。
具体实施方式
以下对本发明更详细地说明。
作为本发明组合物中使用的(A)液体环氧树脂,只要在室温下为液体,则能够使用任何环氧树脂,例如可列举双酚A型环氧树脂及双酚F型环氧树脂等双酚型环氧树脂;苯酚酚醛清漆型环氧树脂及甲酚酚醛清漆型环氧树脂等酚醛清漆型环氧树脂;萘型环氧树脂;联苯型环氧树脂;环戊二烯型环氧树脂、脂环式环氧树脂等、及这些的混合物。
上述液体环氧树脂中,特别优选双酚A型环氧树脂、双酚F型环氧树脂、脂环式环氧树脂及萘型环氧树脂,这些的采用JISK7117-1中记载的方法测定的粘度(25℃)优选为0.1~500Pa·s,更优选为1~200Pa·s。
另外,也优选使用由下述式表示的环氧树脂。
[化7]
应予说明,使用具有上述式的环氧树脂的情况下,推荐其含量为(A)成分全体的25~100质量%、更优选地50~100质量%、进一步优选地75~100质量%。如果不到25质量%,有可能组合物的粘度上升,固化物的耐热性降低。
(A)成分的液体环氧树脂优选水解性氯为1000ppm以下、特别地500ppm以下,钠及钾分别为10ppm以下。水解性氯超过1000ppm,钠或钾超过10ppm的情况下,如果将半导体装置在高温高湿下长时间放置,有时耐湿性劣化。
本发明中使用的(B)固化剂为酸酐系的固化剂,只要能够将(A)成分固化,则并无特别限定,优选在室温下为液体,或者在(A)成分中溶解而成为液体。例如可列举3,4-二甲基-6-(2-甲基-1-丙烯基)-1,2,3,6-四氢邻苯二甲酸酐、1-异丙基-4-甲基-双环[2.2.2]辛-5-烯-2,3-二羧酸酐、甲基四氢邻苯二甲酸酐、甲基六氢邻苯二甲酸酐、六氢邻苯二甲酸酐、甲基ハイミック酸酐、均苯四甲酸二酐、马来酐化别罗勒烯、二苯甲酮四羧酸二酐、3,3’,4,4’-联苯四(二苯甲酮四羧酸二酐)、(3,4-二羧基苯基)醚二酐、双(3,4-二羧基苯基)甲烷二酐、2,2-双(3,4-二羧基苯基)丙烷二酐等,能够将这些单独使用或者以2种以上的组合使用。
在提高可靠性的方面,优选使用由下述式表示的酸酐或这些的2种以上的混合物。下述式中,Me表示甲基,Pr表示丙基。
[化8]
上述优选的酸酐中,使用3,4-二甲基-6-(2-甲基-1-丙烯基)-1,2,3,6-四氢邻苯二甲酸酐及1-异丙基-4-甲基-双环[2.2.2]辛-5-烯-2,3-二羧酸酐的混合物的情况下,上述混合物的量优选为(B)成分全体的5~75质量%。如果不到5质量%,密合性降低,有时PCT等的高温多湿下劣化。如果超过75质量%,密合性提高,有时在热冲击试验等试验中产生裂纹。
作为上述混合物的市售例,可列举例如日本环氧树脂社制造的YH306、YH307(商品名)及新日本理化株式会社制造的MH700(商品名)。
(B)成分包含5~75质量%的上述混合物的情况下,作为剩余的固化剂,并无特别限制,优选地,在室温下为液体,或者在(A)成分中溶解而成为液体,例如可列举上述列举的酸酐。特别地,优选选自甲基四氢邻苯二甲酸酐、甲基六氢邻苯二甲酸酐和六氢邻苯二甲酸酐中的1种以上。应予说明,可以将双氰胺、己二酸二酰肼、间苯二甲酸二酰肼等羧酸酰肼并用。
(B)成分的量为对于使(A)成分固化有效的量,因(B)成分的种类而异,将上述的酸酐用作(B)成分的情况下,优选进行选择以使相对于环氧树脂中的环氧基的、由固化剂中的酸酐基(-CO-O-CO-)衍生的羧酸基的当量比成为0.5~1.5的范围。如果不到上述下限,有可能未反应的环氧基残存,玻璃化转变温度降低,而且密合性降低。如果超过上述上限值,有可能固化物变得硬且脆,回流时或温度循环试验时产生裂纹。
作为本发明组合物中配合的(C)球状无机填充材料,能够使用在环氧树脂组合物中通常配合的无机填充材料。例如可列举熔融二氧化硅、结晶性二氧化硅等二氧化硅类、氧化铝、氮化硅、氮化铝、氮化硼、氧化钛、玻璃纤维等。
无机填充材料的平均粒径及形状为采用激光衍射法测定的平均粒径(累积重量平均值或中位径)0.1~10μm、优选地平均粒径1~5μm的球状,特别优选具有这样的平均粒径及形状的熔融二氧化硅。
(C)成分的量相对于(A)及(B)成分的合计100质量份,为600~1,000质量份,优选为700~900质量份。如果不到上述下限,则成型后的翘曲变大,不能获得足够的强度,如果超过上述上限,流动性显著地变差,不能进行在submount上排列的半导体元件的完全密封。
在此,对于无机填充材料,为了使环氧树脂与无机填充材料的相容性良好,并且使结合强度增强,使用用由下述式(1)表示的1种或2种以上的硅烷偶联剂预先表面处理的无机填充材料。
[化9]
(式中,a表示0~3的整数,R1表示碳原子数1~4的1价饱和烃基,R2表示碳原子数1~10的2价饱和烃基,R3表示单键或碳原子数1~10的2价饱和烃基,R4表示氢原子或甲基。另外,A为单键或由下述式
[化10]
(式中,R5为碳原子数1~4的1价饱和烃基,B为O或S。)
[化11]
(式中,R6为碳原子数1~4的1价饱和烃基。)
所示的任一个基团。
这种情况下,a优选为0~3,更优选为0~1。作为R1,优选为甲基、乙基。
R2优选为碳原子数1~10、特别地1~3的亚烷基,R3优选为单键或碳原子数1~10、特别地1~2的亚烷基。
A如上述所述,R5优选甲基、乙基,另外,R6优选甲基、乙基。
作为这样的硅烷偶联剂的例子,除了可列举3-甲基丙烯酰氧基丙基三甲氧基硅烷(KBM503:信越化学工业株式会社制造)、3-丙烯酰氧基丙基三甲氧基硅烷(KBM5103:信越化学工业株式会社制造)等以外,还可列举由下述式
[化12]
(式中,R4如上述那样。Me表示甲基。)
表示的硅烷偶联剂,但并不限定于这些。
对于表面处理中使用的硅烷偶联剂的表面处理方法,并无特别限定,对于硅烷偶联剂处理量,相对于在半导体密封用热固化性树脂组合物中添加的(C)成分的球状无机填充材料100质量份,优选0.5~2.0质量份,更优选为0.5~1.5质量份。
另外,本发明中,作为(D)成分的固化促进剂优选以下所示的固化促进剂。能够使用三苯基膦、三丁基膦、三(对-甲基苯基)膦、三(壬基苯基)膦、三苯基膦·三苯基硼烷、四苯基膦·四苯基硼酸盐等磷系化合物、三乙胺、苄基二甲基胺、α-甲基苄基二甲基胺、1,8-二氮杂双环[5.4.0]十一碳烯-7等的叔胺化合物、2-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑等咪唑化合物等。
固化促进剂的量为用于促进环氧树脂与固化剂的固化反应有效的量,优选地,相对于(A)及(B)成分的合计100质量份,为0.1~15质量份,更优选为0.5~10质量份。
本发明的液体环氧树脂组合物,为了减轻固化物的应力,能够以不阻碍本发明的目的的量配合公知的有机硅改性环氧树脂、硅橡胶、硅油、硅胶、液体的聚丁二烯橡胶、甲基丙烯酸甲酯-丁二烯-苯乙烯等的可挠性树脂。
作为有机硅改性环氧树脂,优选由下述式(2)表示的树脂。
[化13]
上述式中,R7为氢原子或碳原子数1~4的烷基,优选为氢原子或甲基,R8为碳原子数1~4的烷基,优选为甲基。Q为碳原子数3~6的亚烷基、氧亚烷基、或羟基氧亚烷基,例如,为-CH2CH2CH2-、-OCH2-CH(OH)-CH2-O-CH2CH2CH2-或-O-CH2CH2CH2-。r为4~199的整数,优选为19~130,更优选为70~109的整数,p为1~10的整数,q为1~10的整数,优选为2~5的整数。
配合该有机硅改性环氧树脂的情况下,相对于(A)环氧树脂100质量份,可设为1~50质量份的配合量,特别优选以包含1~20质量份、特别地2~15质量份的二有机硅氧烷单元的方式进行配合,由此,能够降低固化物的应力,与基板的密合性也能够提高。在此,二有机聚硅氧烷量能够用下述式求出。
聚硅氧烷量=(聚硅氧烷部分的分子量/有机硅改性环氧树脂的分子量)×添加量
本发明的密封树脂组合物中,根据需要能够进一步配合脱模剂、阻燃剂、离子捕集剂、抗氧化剂、粘接赋予剂、低应力剂、着色剂等各种的添加剂。
作为阻燃剂,并无特别限制,能够使用全部的公知的阻燃剂。其中,优选使用磷腈化合物、有机硅化合物、钼酸锌负载滑石、钼酸锌负载氧化锌、氢氧化铝、氢氧化镁、氧化钼。
作为离子捕集剂,并无特别限制,能够使用全部的公知的离子捕集剂。优选使用水滑石类、氢氧化铋化合物、稀土类氧化物等。
在本发明的半导体密封用液体环氧树脂组合物中,根据需要能够进一步配合各种的添加剂。例如,能够在不损害本发明的效果的范围内任意地添加配合3-缩水甘油氧基丙基三甲氧基硅烷这样的具有环氧基的有机硅系的粘接性提高剂、乙炔黑、炉法炭黑等各种炭黑等着色剂等作为添加剂。
本发明的组合物能够采用以下所示的方法制造。例如,可以通过将环氧树脂、固化剂和固化促进剂同时地或者各自地根据需要边加以加热处理边搅拌、溶解、混合、分散,有时在这些的混合物中加入无机填充材料,混合、搅拌、分散而得到。这种情况下,对混合、搅拌、分散等的装置并无特别限定,具体地,能够使用具备搅拌、加热装置的莱卡机(ライカイ機)、双联辊、三联辊、球磨机、连续挤出机、行星式混合机、Masscolloider等,可将这些装置适当地组合使用。
这样得到的本发明的环氧树脂组合物能够利用以往采用的成型法、例如传递成型、压缩成型、注射成型、铸塑法等进行,特别优选进行压缩成型。
这种情况下,环氧树脂组合物的成型温度优选在100~180℃下进行45~600秒,后固化优选在140~180℃下进行1~6小时。
本发明的环氧树脂组合物能够使在8英寸及12英寸晶片上成型时的翘曲变小。另外,机械强度、绝缘性优异,用其固化物密封了的半导体装置的长期可靠性优异。另外,即使使用与以往作为传递成型、压缩成型材料一般使用的环氧树脂组合物同样的装置、成型条件,也不发生流痕、未填充这样的成型不良,因此生产率也优异。
所谓流痕,是从成型物的中心向外侧以放射状残留的白色的流动痕。如果产生流痕,则担心外观不良、二氧化硅不均一分散导致的固化物物性的波动、与其相伴的可靠性的降低等。
所谓未填充,是指在晶片外周部发生的树脂的欠缺。如果发生未填充,在后工序中搬运晶片时,传感器将未填充部误认为是缺口,担心对位特性的降低。
实施例
以下示出实施例及比较例,对本发明具体地说明,但本发明并不受下述实施例限制。应予说明,各例中的份都为质量份,%为质量%。另外,以下示出各例的评价方法。
(A)不含硅氧烷键的液体环氧树脂
(1)环氧树脂A1:双酚A型环氧树脂(エピコート828:日本环氧树脂株式会社制造)
(2)环氧树脂A2:萘型环氧树脂(HP4032D:DIC株式会社制造)
(3)环氧树脂A3:脂环式环氧树脂(セロキサイド2021P:大赛璐化学工业社制造)
(B)固化剂
(1)固化剂B1:由下述式表示的酸酐的混合物(YH307:日本环氧树脂株式会社制造)
[化14]
固化剂B2:由下述式表示的酸酐的混合物(MH700:新日本理化株式会社制造)
[化15]
固化剂B3:3,3’-二乙基-4,4’-二氨基二苯基甲烷(商品名:カヤハードAA、日本化药(株)制造)、胺当量63.5
(C)无机填充材料
相对于基础球状熔融二氧化硅(アドマテックス制造、平均粒径5μm)100份,用0.75份的硅烷偶联剂进行干式表面处理,作成了下述处理二氧化硅A~G。应予说明,比较例6中使用了未处理的上述二氧化硅。
处理二氧化硅A:用3-甲基丙烯酰氧基丙基三甲氧基硅烷(KBM503:信越化学工业株式会社制造)表面处理过的二氧化硅
处理二氧化硅B:用3-丙烯酰氧基丙基三甲氧基硅烷(KBM5103:信越化学工业株式会社制造)表面处理过的二氧化硅
处理二氧化硅C:用下述式所示的硅烷偶联剂表面处理过的二氧化硅
[化16]
处理二氧化硅D:用下述式所示的硅烷偶联剂表面处理过的二氧化硅
[化17]
处理二氧化硅E:用γ-缩水甘油氧基丙基三甲氧基硅烷(KBM403:信越化学工业株式会社制造)表面处理过的二氧化硅
处理二氧化硅F:用N-苯基-3-氨基丙基三甲氧基硅烷(KBM573:信越化学工业株式会社制造)表面处理过的二氧化硅
进而,相对于基础球状熔融二氧化硅(龙森制造、平均粒径12μm)100份,用3-甲基丙烯酰氧基丙基三甲氧基硅烷(KBM503:信越化学工业株式会社制造)0.75份进行干式表面处理,作成了处理二氧化硅G。
(D)固化促进剂:ノバキュアHX3088(旭化成イーマテリアルズ社制造)
其他成分
(1)炭黑:デンカブラック(电气化学工业制造)
(2)粘接性提高剂:γ-缩水甘油氧基丙基三甲氧基硅烷(KBM403:信越化学工业株式会社制造)
(3)有机硅改性环氧树脂
[化18]
与
的加成反应生成物,
[表1]
[表2]
粘度
常温(25℃)下的粘度测定使用Brookfield可编程流变仪型号:DV-III乌氏粘度计(锥轴CP-51/1.0rpm)进行。
玻璃化转变温度、线膨胀率
将5×5×15mm的试验片安置于热膨胀计(Rigaku TMA8140C)中,在升温5℃/分、载荷19.6mN下从25℃测定到300℃。作成尺寸变化与温度的坐标图,选择在拐点的温度以下获得尺寸变化-温度曲线的切线的任意的温度2点A1,A2、在拐点的温度以上获得切线的任意的2点B1,B2,将连结A1,A2的直线与连结B1,B2的直线的交点设为玻璃化转变温度。将A1~A2的斜率设为Tg以下的线膨胀率,将B1~B2的斜率设为Tg以上的线膨胀率(图1)。
翘曲测定
液体树脂组合物的压缩成型后的翘曲测定是使用晶片8英寸/725μm厚,用アピックヤマダ社制造的晶片模具(MZ407-1)将树脂厚度设定为200μm,以压缩时间600秒、120℃下成型后,以150℃/1小时使其完全固化(后固化),确认了翘曲。
流痕·未填充的有无
将液体树脂组合物在120℃下用600秒压缩成型为树脂厚度400μm后,以150℃/1小时使其完全固化(后固化)后,通过外观目视评价了流痕、未填充的有无。
研磨性
将液体树脂组合物在120℃下用600秒压缩成型为树脂厚度400μm后,以150℃/1小时使其完全固化(后固化)后,进行研磨性的确认,按照下述的标准进行了评价。
(DISCO AUTOMATIC GRINDER DAG810)
在条件Grinding 1.0μm/s、Spindle speed 4,800rpm、Stage speed 300rpm下进行。
良好:可以进行600目研磨,并且研磨时的负荷电流值在8.0A以下稳定。
NG:不能稳定地进行600目研磨。
切割性
将液体树脂组合物或粒料状树脂组合物在120℃下用600秒压缩成型为树脂厚度400μm后,在150℃/1小时下使其完全固化(后固化)后,进行切割性的确认,按照下述的标准进行了评价。
(DISCO A540)
良好:观察断面,硅碎落、在树脂与硅界面没有发生剥离的情形
NG:观察断面,硅碎落、在树脂与硅界面发生了剥离的情形
可靠性试验
在厚200μm、8英寸晶片以20μm厚使用管芯接合材料SFX-513M1(信越化学工业株式会社制造)进行印刷(厚膜丝网印刷机THICK FILM PRINTER类型MC212),在B阶状态下用切割装置切割为7mm见方大小,同时准备半导体芯片。
接下来,在厚200μm、8英寸晶片上使用倒装贴片机(Panasonic NM-SB50A),对厚220μm、7mm见方带有管芯接合材料的半导体芯片在10N/150℃/1.0秒的条件下进行管芯接合,得到了搭载半导体芯片的200μm晶片。
将带有半导体芯片的200μm晶片安置于压缩成型机,放置适量的液体树脂组合物,从成型压力最大30MPa以15MPa、110℃、10分钟进行固化,得到了晶片。调整液体树脂组合物的量以使成型后的树脂厚度成为400μm±10μm。对该晶片以150℃、2小时用烘箱进行热处理,进行了后固化后,在此使用切割装置,切割为7.1mm见方,得到了搭载着分割的厚400μm的树脂的半导体芯片。
对于分割的树脂搭载半导体芯片,在BT基盘上使用倒装贴片机(Panasonic NM-SB50A)、在10N/150℃/1.5秒的条件下用管芯接合材料SFX-513S(信越化学工业株式会社制造)进行管芯接合,以150℃、4小时用烘箱热处理,进行后固化,得到了带有树脂搭载半导体芯片的BT基板。
在带有树脂搭载半导体芯片的BT基板上,将模塑料进行传递成型(G-LINEプレスアピックヤマダ社制造),在成型条件175℃、90秒、9MPa下以1.5mm厚成型,再次用切割装置切割为10.0mm见方,得到了分割的带有模塑料树脂搭载半导体芯片的BT基板(半导体装置)。
对分割的上述半导体装置在85℃、85%RH的条件下进行了168小时吸湿处理。使其通过以最大温度260℃、255~260℃的时间成为30秒±3秒的方式预先设定的回流焊炉3次,进行焊料耐热试验(剥离检查),通过目视进行了评价。
TCT(温度循环试验)
将分割的带有模塑料树脂搭载半导体芯片的BT基板,使用ESPEC社制小型冷热冲击装置TSE-11,进行了-55℃/15分+125℃/15分(自动)的循环。首先,在0次使用超声波探伤装置(ソニックス社制造QUANTUM350)使用75MHz的探针,用无破坏确认了半导体芯片内部的剥离状态。接下来,250循环后进行同样的检查,反复500次循环后、700次循环后,进行了同样的检查。将结果示于表1。
相对于半导体芯片的面积,剥离面积的合计不到约5%的情形,作为微小剥离评价为“无剥离(OK)”,存在5%以上的剥离面积的情况下评价为“有剥离(NG)”。
Claims (13)
1.半导体密封用液体环氧树脂组合物,其特征在于,含有:
(A)在分子中不含硅氧烷键的液体环氧树脂,
(B)酸酐系固化剂,
(C)表面处理球状无机填充材料:相对于(A)、(B)成分的合计100质量份,为600~1,000质量份,其中,作为无机填充材料,为采用激光衍射法测定的平均粒径0.1~10μm的球状无机填充材料,其表面用由下述式(1)表示的(甲基)丙烯酸系官能性硅烷偶联剂、以相对于(C)成分的球状无机填充材料100质量份为0.5~2.0质量份的比例进行了表面处理,
式中,a为0~3的整数,R1为碳原子数1~4的1价饱和烃基,R2为碳原子数1~10的2价饱和烃基,R3为单键或碳原子数1~10的2价饱和烃基,R4为氢原子或甲基,A为单键或由下述式表示的任一个的基团,
-NR5-
式中,R5为碳原子数1~4的1价饱和烃基,B为O或S,
式中,R6为碳原子数1~4的1价饱和烃基,
(D)固化促进剂,以及
相对于(A)成分100质量份,配合的1~50质量份的由下述平均组成式(2)表示的有机硅改性环氧树脂,
式中,R7为氢原子或碳原子数1~4的烷基,R8为碳原子数1~4的烷基,Q为碳原子数3~6的亚烷基、氧亚烷基、或羟基氧亚烷基,r为4~199的整数,p为1~10的整数,q为1~10的整数。
2.权利要求1所述的液体环氧树脂组合物,其中,(A)成分为选自双酚A型环氧树脂、双酚F型环氧树脂、萘型环氧树脂、脂环式环氧树脂和由下述式表示的环氧树脂中的1种以上,
3.权利要求1或2所述的半导体密封用液体环氧树脂组合物,其中,(B)成分为选自由下述式表示的酸酐中的1种以上,
式中,Me表示甲基,i-Pr表示异丙基。
4.权利要求1或2所述的液体环氧树脂组合物,其中,(D)成分为选自磷系化合物、叔胺化合物、咪唑化合物中的1种以上,其量相对于(A)和(B)成分的合计100质量份,为0.1~15质量份。
5.权利要求3所述的液体环氧树脂组合物,其中,(D)成分为选自磷系化合物、叔胺化合物、咪唑化合物中的1种以上,其量相对于(A)和(B)成分的合计100质量份,为0.1~15质量份。
6.权利要求4所述的液体环氧树脂组合物,其中,(D)成分为选自三苯基膦、三丁基膦、三(对-甲基苯基)膦、三(壬基苯基)膦、三苯基膦·三苯基硼烷、四苯基膦·四苯基硼酸盐、三乙胺、苄基二甲基胺、α-甲基苄基二甲基胺、1,8-二氮杂双环[5.4.0]十一碳烯-7、2-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑中的1种以上。
7.权利要求5所述的液体环氧树脂组合物,其中,(D)成分为选自三苯基膦、三丁基膦、三(对-甲基苯基)膦、三(壬基苯基)膦、三苯基膦·三苯基硼烷、四苯基膦·四苯基硼酸盐、三乙胺、苄基二甲基胺、α-甲基苄基二甲基胺、1,8-二氮杂双环[5.4.0]十一碳烯-7、2-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑中的1种以上。
8.权利要求1、2、5、6、或7所述的液体环氧树脂组合物,其采用JISK7117-1中记载的方法测定的25℃下的粘度为5~1000Pa·s。
9.权利要求3所述的液体环氧树脂组合物,其采用JISK7117-1中记载的方法测定的25℃下的粘度为5~1000Pa·s。
10.权利要求4所述的液体环氧树脂组合物,其采用JISK7117-1中记载的方法测定的25℃下的粘度为5~1000Pa·s。
11.用权利要求1~10的任一项所述的液体环氧树脂组合物的固化物密封了的半导体装置。
12.树脂密封型半导体装置的制造方法,其为树脂密封型半导体装置的制造方法,其特征在于,将形成了一个以上的半导体元件的硅晶片或基板全体用半导体密封用环氧树脂组合物的固化物总括密封时,在形成了一个以上的半导体元件的硅晶片或基板的单面将权利要求1~10的任一项所述的半导体密封用液体环氧树脂组合物在挤压下覆盖,或者在真空气氛下进行减压覆盖,将该树脂组合物加热固化而将半导体元件密封,然后,通过对固化树脂层进行研磨加工、切割而形成单片。
13.权利要求12所述的树脂密封型半导体装置的制造方法,其特征在于,使用直径12英寸以上20英寸以下的硅晶片。
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TW200913181A (en) * | 2007-07-10 | 2009-03-16 | Arakawa Chem Ind | Optical semiconductor-sealing composition |
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JP5764423B2 (ja) * | 2011-08-02 | 2015-08-19 | 日東電工株式会社 | 光半導体装置用エポキシ樹脂組成物およびそれを用いて得られる光半導体装置用リードフレームまたは光半導体装置用基板、ならびに光半導体装置 |
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