CN105895546B - 六方晶单晶基板的检查方法和检查装置 - Google Patents

六方晶单晶基板的检查方法和检查装置 Download PDF

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CN105895546B
CN105895546B CN201610085661.8A CN201610085661A CN105895546B CN 105895546 B CN105895546 B CN 105895546B CN 201610085661 A CN201610085661 A CN 201610085661A CN 105895546 B CN105895546 B CN 105895546B
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laser beam
single crystal
crystal substrate
hexagonal single
light
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CN105895546A (zh
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平田和也
高桥邦充
西野曜子
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Disco Corp
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Disco Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Laser Beam Processing (AREA)
  • Toxicology (AREA)
  • Combustion & Propulsion (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN201610085661.8A 2015-02-17 2016-02-15 六方晶单晶基板的检查方法和检查装置 Active CN105895546B (zh)

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JP2015028509A JP6444207B2 (ja) 2015-02-17 2015-02-17 六方晶単結晶基板の検査方法及び検査装置
JP2015-028509 2015-02-17

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CN105895546A CN105895546A (zh) 2016-08-24
CN105895546B true CN105895546B (zh) 2020-06-30

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JP (1) JP6444207B2 (ja)
KR (1) KR102425117B1 (ja)
CN (1) CN105895546B (ja)
TW (1) TWI672492B (ja)

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JP7009194B2 (ja) * 2017-12-12 2022-01-25 株式会社ディスコ ウエーハ生成装置および搬送トレー
EP3502615A1 (en) * 2017-12-21 2019-06-26 EpiGan NV A wafer surface curvature determining system
US10388526B1 (en) 2018-04-20 2019-08-20 Semiconductor Components Industries, Llc Semiconductor wafer thinning systems and related methods
US11121035B2 (en) 2018-05-22 2021-09-14 Semiconductor Components Industries, Llc Semiconductor substrate processing methods
US10896815B2 (en) 2018-05-22 2021-01-19 Semiconductor Components Industries, Llc Semiconductor substrate singulation systems and related methods
US20190363018A1 (en) 2018-05-24 2019-11-28 Semiconductor Components Industries, Llc Die cleaning systems and related methods
US11830771B2 (en) 2018-05-31 2023-11-28 Semiconductor Components Industries, Llc Semiconductor substrate production systems and related methods
US10468304B1 (en) 2018-05-31 2019-11-05 Semiconductor Components Industries, Llc Semiconductor substrate production systems and related methods
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
CN114413767B (zh) * 2022-01-24 2023-06-13 中国工程物理研究院机械制造工艺研究所 一种激光透射精密旋转定位调节装置

Citations (1)

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CN102696158A (zh) * 2010-01-07 2012-09-26 住友电气工业株式会社 Iii族氮化物半导体激光器元件、制作iii族氮化物半导体激光器元件的方法及评估因形成刻划槽所致损伤的方法

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JPH0766253A (ja) * 1993-08-23 1995-03-10 Matsushita Electron Corp 走査型電子顕微鏡およびそれを用いた結晶構造の評価方法
JP3943248B2 (ja) * 1998-06-19 2007-07-11 東芝Ｉｔコントロールシステム株式会社 結晶方位測定装置
JP2000094221A (ja) 1998-09-24 2000-04-04 Toyo Advanced Technologies Co Ltd 放電式ワイヤソー
JP3927064B2 (ja) * 2002-04-15 2007-06-06 スタンレー電気株式会社 非接触式変位計
JP2005179167A (ja) * 2003-06-30 2005-07-07 Kenichiro Miyahara 薄膜形成用基板、薄膜基板及び発光素子
TWI232294B (en) * 2004-04-30 2005-05-11 Univ Nat Chiao Tung Image type polarized light measurement that can measure the thickness and optic axis of the optical crystal simultaneously
JP2011203245A (ja) * 2010-03-02 2011-10-13 You-Na Tech Corp 半導体ウェハの表面検査システム及び表面検査方法
WO2012090572A1 (ja) * 2010-12-27 2012-07-05 住友電気工業株式会社 炭化珪素基板、半導体装置、炭化珪素基板の製造方法、および半導体装置の製造方法
JP6127649B2 (ja) * 2013-03-28 2017-05-17 新日鐵住金株式会社 一軸結晶からなる単結晶基板の面方位測定方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102696158A (zh) * 2010-01-07 2012-09-26 住友电气工业株式会社 Iii族氮化物半导体激光器元件、制作iii族氮化物半导体激光器元件的方法及评估因形成刻划槽所致损伤的方法

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Publication number Publication date
JP2016151457A (ja) 2016-08-22
TWI672492B (zh) 2019-09-21
TW201631308A (zh) 2016-09-01
KR102425117B1 (ko) 2022-07-26
CN105895546A (zh) 2016-08-24
KR20160101679A (ko) 2016-08-25
JP6444207B2 (ja) 2018-12-26

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