CN105874097A - Electron beam evaporation source and vacuum deposition device - Google Patents
Electron beam evaporation source and vacuum deposition device Download PDFInfo
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- CN105874097A CN105874097A CN201580003277.2A CN201580003277A CN105874097A CN 105874097 A CN105874097 A CN 105874097A CN 201580003277 A CN201580003277 A CN 201580003277A CN 105874097 A CN105874097 A CN 105874097A
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- Prior art keywords
- electron beam
- magnetic
- principal axis
- evaporation source
- evaporation material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
- H01J37/065—Construction of guns or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
Abstract
Provided are: an electron beam evaporation source wherein reflected electrons scattering in a wide range can be stably captured; and a vacuum deposition device provided with the electron beam evaporation source. This electron beam evaporation source is provided with an evaporation material holding section, an electron gun, and a magnetic circuit section. The evaporation material holding section has a first holding region capable of holding a first evaporation material. The electron gun is disposed by being aligned with the first holding region in the first axis direction, and is configured such that the electron gun can output an electron beam to the first holding region. The magnetic circuit section has a magnetic plate configured from a soft magnetic material, and a reflected electron polarization member capable of polarizing reflected electrons toward the magnetic plate, said reflected electrons having been formed when the electron beam is reflected by the first evaporation material, and the magnetic circuit section is disposed by being aligned with the electron gun in the first axis direction with the first holding region therebetween.
Description
Technical field
The present invention relates to a kind of electron beam evaporation source and there is the vacuum evaporation dress of this electron beam evaporation source
Put.
Background technology
Vacuum vapour deposition is as the method being effectively formed thin film, and application is extensive.As being used for making
The material forming thin film (referred to as evaporates material, deposition material.) heating source that evaporates, make electricity consumption
Son bundle, resistance heating, sensing heating and ion beam etc..Electron beam is utilized to heat, it is adaptable to Gao Rong
The material that some metal, oxide etc. is a lot, and when employing utilizes the mode that electron beam heats, by
In evaporation material and crucible etc. cause of reduced contamination.For the above reasons, electron beam mode of heating
It is also used for being received dress as an evaporation source and being evaporated materials forming layers by these by multiple evaporation materials
The situation etc. of integrated membrane.
On the other hand, it is known that reflection electronic can be produced by electron beam irradiation evaporation material.Above-mentioned
When reflection electronic arrives substrate, the temperature of substrate can be made to increase, film quality etc. may be made to produce
Problem.Therefore, in quoting document 1, record and a kind of there is peristome and be arranged in both sides
The reflection electronic catcher of the box like of yoke piece.Reflection electronic catcher is by based on this yoke piece
The action of a magnetic field and make the reflection electronic entered from peristome deflect and make its seizure with this reflection electronic
The upper surface of device and lower surface collide and are captured.
[prior art literature]
[patent documentation]
[patent documentation 1] Japanese invention patent the 5280149th
[invention to solve the technical problem that]
But, quoting reflection electronic catcher described in document 1 cannot be to departing from from peristome
Reflection electronic catches.It addition, do not account for existing in the evaporation material be contained in evaporation source
The impact in the magnetic field formed around reflection electronic catcher when magnetic material.
Summary of the invention
In view of this, it is an object of the invention to, it is provided that a kind of can be to dispersing in a big way
Reflection electronic stably carries out the electron beam evaporation source that catches and has the true of this electron beam evaporation source
Empty evaporation coating device.
[solving the technical scheme of technical problem]
In order to achieve the above object, the electron beam evaporation source of an embodiment of the invention has steaming
Send out material maintaining part, electron gun and magnetic circuit part.Described evaporation material maintaining part has can keep
1st holding region of 1 evaporation material.Described electron gun keeps region the described 1st with the described 1st
Direction of principal axis is arranged, it is possible to keep region injection electron beam to the described 1st.Described magnetic circuit part has
Having: magnetic sheet, it is made up of soft magnetic material；And reflection electronic deflection component, it can make
Described electron beam is deflected to described magnetic sheet by the reflection electronic after the 1st evaporation material reflection, this magnetic
Road portion keeps region to be arranged at the 1st direction of principal axis with described electron gun across the described 1st.
According to said structure, owing to reflection electronic deflects towards magnetic sheet such that it is able to prevent reflection
Electronics arrives substrate.Therefore, it is possible to prevent the substrate temperature caused because of reflection electronic from rising, thus
Prevent the deterioration etc. of film quality.It is additionally, since magnetic sheet and there is the function of magnetic shield, it is thus possible to
Enough prevent from being arranged between the magnetic material of magnetic sheet bottom and reflection electronic deflection component is mutual
Effect.It addition, be prevented from the magnetic circuit part magnetic action to electron beam, such as, it is prevented from magnetic circuit part
Make the beam spot deformation etc. of electron beam.
The present invention is preferred, and above-mentioned evaporation material maintaining part also has can keep evaporation wait (standby)
In the 2nd evaporation material the 2nd holding region, described magnetic circuit part with described 2nd keep region exist
2nd direction of principal axis vertical with described 1st direction of principal axis configures in opposite directions.
According to above-mentioned magnetic sheet as the function of magnetic shield, even if the 2nd evaporation material comprises magnetic material
During material, it is also possible to prevent that magnetic material from being attracted by reflection electronic deflection component and the problems such as emersion are sent out
Raw.Therefore, no matter the physical property of the 2nd evaporation material how, and above-mentioned electron beam evaporation source can
Enough run sustainedly and stably.
It addition, the present invention is preferred, electron beam evaporation source, also there is cover plate (hearth deck),
It has and exposes the described 1st peristome keeping region, vertical with described 1st direction of principal axis the
2 direction of principal axis are oppositely arranged with described evaporation material maintaining part, the most smooth structure.
By above-mentioned cover plate, it is possible to prevent the 1st evaporation material during evaporation to be attached to evaporate material
Material maintaining part.It is additionally, since the structure that cover plate is the most smooth, therefore, evaporates material the 1st
During evaporation, the 1st evaporation material is not easy to be attached to cover plate.Even if it addition, the 1st evaporation material is attached
At cover plate, owing to cover plate is smooth shape, therefore, it is possible to easily cover plate is cleared up.
Therefore, it is possible to improve the maintainability of electron beam evaporation source.
The present invention is preferred, described magnetic circuit part be arranged in described evaporation material maintaining part and described cover plate it
Between.
Hereby it is possible to prevent the 1st evaporation material to be attached to magnetic circuit part such that it is able to improve electron beam
The maintainability of evaporation source.And, magnetic circuit part can be formed on the less smooth cover plate of barrier
Magnetic field, therefore reflection electronic deflection component can make reflection electronic deflect more effectively.
The present invention is preferred, and above-mentioned electron beam evaporation source also has the cooling that can cool down described cover plate
Portion.
Accordingly, when the reflection electronic of deflection arrives on cover plate, logical overcooled cover plate reduces reflection
The energy of electronics.Therefore, cover plate can more effectively catch reflection electronic.
It addition, the present invention is preferred, described reflection electronic deflection component has: the 1st of the 1st polarity
Magnetic face, it is vertical with described 2nd direction of principal axis；And the 2nd the 2nd magnetic face of polarity, its with
Described 2nd direction of principal axis is vertical, and described in described 2nd polarity, the 1st polarity is different, described 1st magnetic
Face and the 2nd edge, magnetic face and the 1st direction of principal axis and 3rd direction of principal axis vertical with described 2nd direction of principal axis
It is arranged.
Accordingly, reflection electronic deflection component can form the magnetic field represented by the magnetic line of force, this magnetic line of force
For any one party from the 1st magnetic face and the 2nd magnetic face to the opposing party, and on the 2nd direction of principal axis
The curve that side is protruding.Hereby it is possible to make above reflection electronic deflection component, the 2nd direction of principal axis
The reflection electronic dispersed also deflects such that it is able to capture more reflection electronic.
More specifically, the present invention is preferred, described reflection electronic deflection component has: the 1st Magnet,
It is formed with described 1st magnetic face；And the 2nd Magnet, it is formed with described 2nd magnetic face,
With described 1st Magnet in described 3rd direction of principal axis configured separate.
In order to achieve the above object, the vacuum deposition apparatus of other the technical scheme of the present invention has
Vacuum chamber, supporting device and electron beam evaporation source.
Described supporting device is arranged in described vacuum chamber, it is possible to supporting evaporation object.
Described electron beam evaporation source, it is arranged in described vacuum chamber, exists with described supporting device
Described 2nd direction of principal axis in opposite directions, has evaporation material maintaining part, electron gun and magnetic circuit part.
Described evaporation material maintaining part has the 1st holding region that can keep the 1st evaporation material.
Described electron gun keeps region to be arranged at described 1st direction of principal axis with the described 1st, and energy
Enough to described 1st holding region injection electron beam.
Described magnetic circuit part has: magnetic sheet, and it is made up of soft magnetic material；Deflect with reflection electronic
Parts, it can make described electron beam by the reflection electronic after the 1st evaporation material reflection to described magnetic
Property plate deflection, this magnetic circuit part and described electron gun across the described 1st keep region and the described 1st
Direction of principal axis is arranged.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the vacuum deposition apparatus of the 1st embodiment representing the present invention.
Fig. 2 is the integrally-built vertical of the electron beam evaporation source of the 1st embodiment representing the present invention
Body figure.
Fig. 3 is to represent that above-mentioned electron beam evaporation source of dismantling from above-mentioned electron beam evaporation source is comprised
The axonometric chart of cover plate, cooling end structure.
Fig. 4 represents that above-mentioned electron beam evaporation source of dismantling from above-mentioned electron beam evaporation source is comprised
The axonometric chart of the structure of cover plate and cooling end.
Fig. 5 is the substantially top view of the reflection electronic deflection component of above-mentioned electron beam evaporation source, wherein
A is the figure observed from Z-direction, and B is the figure observed from X-direction.
Fig. 6 is the axonometric chart representing the magnetic flux (measuring) produced by above-mentioned reflection electronic deflection component.
Fig. 7 is the reflection electronic deflection component representing and observing above-mentioned 1st embodiment from Z-direction
The substantially top view of other structure examples.
Fig. 8 is the overall structure of the electron beam evaporation source of the comparative example representing above-mentioned 1st embodiment
Axonometric chart.
Fig. 9 is to represent in the experimental example of above-mentioned 1st embodiment, the chamber of vacuum deposition apparatus
In, the schematic diagram of the position of placement substrate and temperature sensor.
Figure 10 is the chart of the result representing experimental example 1-1, and it represents the result of embodiment 1.
Figure 11 is the chart of the result representing experimental example 1-1, and it represents the result of comparative example 1.
Figure 12 is the chart of the result representing experimental example 1-2.
Figure 13 is the integrally-built of the electron beam evaporation source of the 2nd embodiment representing the present invention
Axonometric chart.
Figure 14 is the chart of the result representing experimental example 2-1.
Detailed description of the invention
Below, with reference to drawing, embodiments of the present invention are illustrated.
＜ the 1st embodiment ＞
(structure of vacuum deposition apparatus)
Fig. 1 is the schematic diagram of the vacuum deposition apparatus of the 1st embodiment representing the present invention.It addition,
X-direction, Y direction and Z-direction in figure is 3 vertical direction of principal axis, wherein, X-axis
Direction is the 1st direction of principal axis, and it is corresponding to direction before and after electron beam evaporation source 100, Y direction
Being the 3rd direction of principal axis, it is corresponding to the left and right directions of electron beam evaporation source 100, and Z-direction is the
2 direction of principal axis, it corresponds to vertical direction (above-below direction).
As shown in this Fig. 1, vacuum deposition apparatus 1 has vacuum chamber 11, supporting device 12
With electron beam evaporation source 100.
Vacuum chamber 11 is connected with not shown vacuum pump, for being able to maintain that the structure of vacuum.Very
The central part of the end face of plenum chamber 11 is top 11a.Also not shown survey can be configured at top 11a
Determine the quartz crystal unit of thickness.
Supporting device 12 is arranged in vacuum chamber 11, for can the evaporation object such as supporting substrates W
The structure of thing.Supporting device 12 such as has: multiple supports 13, and it is along with vacuum chamber 11
Top 11a centered by circle arranged circumferentially；And not shown drive division.Each support 13
For example, circular shape as cymbal, for keeping the structure of multiple substrate W.Supporting machine
Structure 12 such as has 3 supports 13.Drive division such as makes multiple support 13 with vacuum chamber
Revolve round the sun centered by the top 11a of 11, and make the rotation of each support 13.Hereby it is possible to multiple
On substrate W, formation is deposited with film uniformly.
Electron beam evaporation source 100 is arranged in the bottom of vacuum chamber 11, with supporting device 12 at Z
On direction of principal axis in opposite directions.Electron beam evaporation source 100 is can be to the knot of evaporation material irradiating electron beam B
Structure.The evaporation material irradiated by electron beam B is heated, evaporates and is attached to substrate W, thus
Substrate W constitutes evaporation film.
(structure of electron beam evaporation source)
Fig. 2,3,4 are the axonometric chart of the structure representing electron beam evaporation source 100 respectively, and Fig. 2 is
Overall diagram, Fig. 3 is the figure representing cooling end 133 described later, and Fig. 4 is cover plate (hearth deck) of dismantling
The figure of 130.
As shown therein, electron beam evaporation source 100 has evaporation material maintaining part 110, electricity
Sub-rifle 120, cover plate 130, cooling end 133 and magnetic circuit part 140.In the present embodiment, electronics
Beam evaporation source 100 is made up of the electron beam evaporation source of the metal evaporation with more than 1 crucible.
In electron beam evaporation source 100, such as along X-direction configuration electron gun 120 and evaporation material
Maintaining part 110.Hereinafter, when explanation, the front with electron gun 120 side as X-direction, with
Evaporation material maintaining part 110 side is the rear of X-direction.
It addition, in electron beam evaporation source 100, along Z-direction configuration evaporation material maintaining part 110,
Magnetic circuit part 140 and cover plate 130.Hereinafter, when explanation, to evaporate material maintaining part 110 side as Z
Axial lower section, the top with cover plate 130 side as Z-direction.
With reference to Fig. 2～4, it is straight that evaporation material maintaining part 110 is such as configured to have substantially 200mm
Footpath the most discoid, and comprise more than 1 circumferentially formed crucible 110a, 110b,
110c….Each crucible 110a, 110b, 110c ... be respectively formed as concavity, it is possible to receive dress
Evaporation material.Evaporation material maintaining part 110 has the 1st holding region the 111 and the 2nd and keeps region
112, the 1st keep region 111 and the 2nd keep region 112 for divide above-mentioned multiple crucible 110a,
110b, 110c ... region.
1st keeps region 111 can keep being deposited with the 1st evaporation material of object, such as, comprise receipts
Fill 1 crucible 110a of the 1st evaporation material." evaporation subject " refers to be in can be by electron beam
The state that B irradiates.
2nd keeps region the 112 and the 1st to keep region 111 to adjoin, it is possible in keeping evaporation to wait
The 2nd evaporation material." during evaporation waits " refers to be kept by evaporation material maintaining part 110, but place
In the state do not irradiated by electron beam B.2nd keeps region 112 such as to comprise is able to
Receive dress and be deposited with multiple crucible 110b, 110c of waiting evaporation material ....2nd evaporation material
Material, referred to herein as an evaporation material in above-mentioned evaporation material.Multiple crucible 110b, 110
C ... quantity there is no particular limitation, such as can be about 3～20.
Evaporation material maintaining part 110 also has for driving the not shown of evaporation material maintaining part 110
Drive mechanism, by drive mechanism, evaporation material maintaining part 110 can be made around along Z-direction
Rotary shaft rotate, and regulation position stop.Accordingly, evaporation material maintaining part 110 can
Make to be contained in crucible 110a, 110b, the 110c in the 1st holding region 111 ... change, thus
The 1st evaporation changes in material of evaporation object can be made.It addition, evaporation material maintaining part 110 such as figure
Shown in 1, maintain earth potential.
Electron gun 120 keeps region 111 to be arranged in X-direction with the 1st, it is possible to the 1st
Region 111 is kept to penetrate electron beam B.Electron gun 120 comprises not shown filament (filament)
And anode.Electron gun 120 penetrates the driving electricity of electron beam B: applying high voltage bias as follows
Stream flows through filament so that the surface temperature of filament rises, the filament risen due to surface temperature and sun
Potential difference between pole and release thermoelectron, accordingly injection electron beam B from this filament.
It addition, in electron gun 120, electron beam deflection component has deflection magnetic pole 121 and not
The deflection Magnet of diagram, this electron beam deflection component makes electron beam B such as 180～270 ° inclined
Turn, and the 1st holding region 111 can be irradiated.Not shown deflection Magnet can be electric magnet
Or permanent magnet.
As in figure 2 it is shown, cover plate 130 is configured in Z-direction and evaporation material maintaining part 110
Configure in opposite directions, its overall flat.Cover plate 130 has tabular surface 130a and exposes the 1st holding region
The peristome 131 of 111.In the present embodiment, peristome 131 from tabular surface 130a along Z axis
Direction is formed downwards.Cover plate 130 cover the 2nd keeps region 112, to prevent the 1st evaporation material
Expect to disperse to other evaporation materials, and reflection electronic described later can be caught.The material of cover plate 130
Material, the metal material such as the most applicable copper.
Cooling end 133 is can the structure of cooling cover plate 130.By cooling end 133, it is possible to fall
The energy of the reflection electronic of low shock, and can easily catch reflection electronic.
As it is shown on figure 3, in the present embodiment, cooling end 133 is water-cooled cooling body,
Having: cooling terminal 134, it can import and discharge the cooling medium of liquid state；Cooling tube
135, it can make this cooling medium circulate.It is internal that cooling tube 135 is arranged in cover plate 130, passes through
Cooling medium circulates and cools down cover plate 130.Cooling medium such as can suitable water.Cooling
With the configuration of terminal 134 and cooling tube 135, there is no particular limitation, such as it is shown on figure 3, also
Cooling medium can be made from the rear of X-direction to flow through the side that front is flowed out again from X-direction rear
Formula configures.Hereby it is possible to by overall for cover plate 130 cooling.
As shown in Figures 3 and 4, magnetic circuit part 140 keeps region 111 and electron gun 120 across the 1st
Being arranged in X-direction, in the present embodiment, magnetic circuit part the 140 and the 2nd keeps region 112
Configure in opposite directions in Z-direction.Magnetic circuit part 140 has magnetic sheet 141 and reflection electronic deflection component
142。
Magnetic sheet 141 is made up of soft magnetic material, in the present embodiment, by the material containing ferrum
Constitute.Magnetic sheet 141 cover the 2nd keep region 112 at least some of, as described later,
It has the magnetic screen function of shadow evaporation material maintaining part 110.The shape of magnetic sheet 141 does not has
Particularly limit, such as, be formed as substantially rectangular shape, and be about along the width of Y direction
200mm (that is, identical with the diameter of evaporation material maintaining part 110 degree).It addition, magnetic
Also there is no particular limitation for the thickness of plate 141, such as, can be the degree of 2mm.
Reflection electronic deflection component 142 is configured to: it can make electron beam B by the 1st evaporation material
Reflection electronic magnetropism plate 141 after reflection deflects.In the present embodiment, reflection electronic deflection
Parts 142 are arranged on magnetic sheet 141.
Fig. 5 is the schematic top of reflection electronic deflection component 142, and wherein A is from Z-direction
The figure observed, B is the figure observed from X-direction.Deflect it addition, Fig. 6 represents by reflection electronic
The axonometric chart of the magnetic flux (measuring) that parts 142 produce.It addition, in Fig. 5 B and Fig. 6, in order to
It is easy to explanation, only represents representational magnetic flux.
As shown in Figures 4 and 5, reflection electronic deflection component 142 has: the 1st of the 1st polarity
Magnetic face 143, it is vertical with Z-direction；2nd magnetic face 144 of the 2nd polarity, itself and Z
Direction of principal axis is vertical, and wherein, the 2nd polarity is different from the 1st polarity.1st polarity for example, N pole,
2nd polarity for example, S pole.
More specifically, reflection electronic deflection component 142 has: the 1st Magnet 145, it is formed
1st magnetic face 143；2nd Magnet 146, it is formed with the 2nd magnetic face 144, and with the 1st magnetic
Ferrum 145 is in Y direction configured separate.Such as, the 1st Magnet the 145 and the 2nd Magnet 146 is at this
Embodiment is made up of 2 permanent magnets of approximately parallelepiped body shape respectively.Permanent magnet such as can
The most applicable enough ferrite magnet, neodium magnet and alnico magnet etc..As shown in Figure 5A, at this
In embodiment, the 1st Magnet the 145 and the 2nd Magnet 146 along magnetic sheet 141 along X-axis
The limit configuration in direction.
As shown in Fig. 5 A, B and Fig. 6, in the 1st magnetic face 143 that the 1st Magnet 145 is formed
It is separately from each other in Y direction with the 2nd magnetic face 144 formed at the 2nd Magnet 146.
In the present embodiment, as shown in Figure 5A, the 1st magnetic face 144, magnetic face the 143 and the 2nd
The width W1 separated along Y direction keeps region 111 than the 1st of evaporation material maintaining part 110
Length W2 length along Y direction.Herein, width W1 is the 1st magnetic face the 143 and the 2nd magnetic
In the width that property face 144 separates along Y direction, along the width that Y direction is the shortest, length W2
It is the 1st length keeping in region 111 along the longest part of Y direction.
It addition, the 1st magnetic face 143 can along the width that Y direction separates with the 2nd magnetic face 144
It is configured to: keep certain along with being close to X-direction rear.That is, the 1st magnetic face 143 and
2 magnetic faces 144 respectively along X-direction be parallel shape extend.It addition, the 1st magnetic face 143 He
2nd magnetic face 144 can configure the rear end to evaporation material maintaining part 110 along X-direction always.
As shown in Fig. 5 B and Fig. 6, reflection electronic deflection component 142 magnetic field formed is by from the 1st
Magnetic face 143 represents towards the magnetic line of force M in the 2nd magnetic face 144.More specifically, by reflection electricity
Sub-deflection component 142 produces the magnetic field above Z-direction in the 1st magnetic face 143 respectively,
The side almost parallel with Y direction is produced between the 1st magnetic face 144, magnetic face the 143 and the 2nd
To magnetic field, produce towards the magnetic field below Z-direction in the 2nd magnetic face 144.That is, each magnetic
Line of force M by YZ plane, represent towards the curve that Z-direction is raised above.Accordingly, such as figure
Shown in 6, towards the reflection electronic Re with negative charge of X-direction rear reflection, at reflection electronic
Under the effect in the magnetic field that deflection component 142 is formed, by the Lorentz towards magnetic sheet 141 direction
The effect of power F.Accordingly, reflection electronic Re is caught by cover plate 130 (in Fig. 6 not shown).
Assume in the electron beam evaporation source without magnetic circuit part 140, reflection electricity on cover plate 130
Sub-Re reflects, and this reflection electronic Re may incide the base being configured at above Z-direction
On plate W.When reflection electronic Re incides on substrate W, the energy of reflection electronic Re can make base
Plate W is heated, and the film quality of the evaporation film that can result in declines.
Therefore, according to present embodiment, reflection electronic Re is made to deflect by magnetic circuit part 140, energy
Enough cover plates 130 catch this reflection electronic Re.Hereby it is possible to the temperature of substrate W in suppression evaporation
Rise such that it is able to the film quality maintaining evaporation film is good.
In addition, it is assumed that caught reflection electronic by the reflection electronic catcher of the box with peristome
Time (with reference to patent documentation 1), owing to the reflection electronic not entering into peristome cannot be caught, because of
And the reflection electronic dispersed outside peristome may arrive substrate.In addition, it is desirable to it is anti-to being attached to
Outside, the internal deposition material etc. of the sub-catcher of radio carries out cleaning etc., therefore, increases dimension
The workload protected.
Here, according to present embodiment, magnetic circuit part 140 top is unlimited space, and, such as figure
Shown in 5B, Fig. 6, by reflection electronic deflection component 142, it is also possible at electron beam evaporation source 100
Z-direction above form dome-shaped magnetic field.Accordingly, reflection electronic deflection component 142 makes to Z
The reflection electronic dispersed above direction of principal axis also is able to affected by magnetic fields and deflects.Therefore, electronics
Gun apparatus 100 can catch at the reflection electronic dispersed in a big way.And, according to this embodiment party
Formula, magnetic circuit part 140 is to Z-direction structure open above, and owing to magnetic circuit part 140 is covered
Plate 130 cover such that it is able to save the workload of above-mentioned maintenance.
It addition, according to present embodiment, the 1st magnetic face 144, magnetic face the 143 and the 2nd is along Y-axis
The width W1 that direction separates keeps region 111 along Y-axis than the 1st of evaporation material maintaining part 110
The length W2 length in direction, and above-mentioned width W1 may be configured as: along with being close to X-direction rear
And keep certain.Hereby it is possible to control multiple reflection electricity of the surface reflection by the 1st evaporation material
Son, is not allowed to gather in Y direction, but makes the track of multiple reflection electronic big with Y direction
Cause parallel.Therefore, multiple reflection electronics being captured in a big way on cover plate 130, and had
Effect cooling such that it is able to effectively reduce the energy of reflection electronic, and prevent reflecting again of reflection electronic
Deng.
It addition, Fig. 7 be other structure examples of the magnetic circuit part 140 representing present embodiment, from Z
The substantially top view that direction of principal axis is observed.As shown in the figure, the 1st magnetic face the 143 and the 2nd magnetic
Face 144 such as can be along with being close to X-direction rear and cumulative along the width that Y direction separates.
Accordingly, reflection electronic deflection component 142 in the magnetic line of force formed, along with being close to X-axis side
The magnetic line of force rearward drawing bigger curve increases.Therefore, reflection electronic deflection component 142 energy
Enough easily make side's eminence is dispersed in the Z-axis direction reflection electronic or in the right of Y direction or
The reflection electronic deflection dispersed in left, and reflection electronic can be made inclined with bigger deflection diameter
Turn.
Further, since magnetic sheet 141 is made up of soft magnetic material, though therefore the 2nd evaporation material
When comprising magnetic material, it is also possible to prevent this magnetic material by reflection electronic deflection component 140 magnetic
Draw and occur from problems such as crucible etc. float.Therefore, regardless of the 2nd evaporation material, electron beam
Evaporation source 100 can run continually and steadily.It addition, be prevented from magnetic circuit by magnetic sheet 141
The portion 140 magnetic action to electron beam B.Accordingly, such as it is prevented from magnetic circuit part 140 and makes electron beam
The beam spot deformation etc. of B.
It is additionally, since cover plate 130 to be cooled down by cooling end 133 such that it is able to reduce reflection electronic
Energy, and can improve catch reflection electronic practical property.
Fig. 8 is the axonometric chart of the electron beam evaporation source of the comparative example representing present embodiment.It addition,
Structure as electron beam evaporation source 100 represents with identical labelling, and at this omit to its
Explanation.
Electron beam evaporation source 300 shown in Fig. 8 has and electron beam evaporation source 100 same structure
Evaporation material maintaining part 110 and electron gun 120, but not there is magnetic circuit part, the structure of cover plate 330
Different.Cover plate 330 has the peristome 131 as embodiment and cooling end 133 (at Fig. 8
In not shown), but be not the structure of overall flat, but there is protuberance 332.
Electron beam evaporation source 300 according to said structure, when the 1st evaporation material evaporation, according to
, there is the probability that the 1st evaporation material is attached to the protuberance 332 of cover plate 330 in the angle dispersed.
It addition, when the 1st evaporation material is attached to cover plate 330, due to protuberance 332 or retaining lugs 332
The existence of screw etc., and be difficult to remove the material of attachment.
Here, according to present embodiment, by making the structure that cover plate 130 is the most smooth, it is possible to
1st evaporation material is greatly lowered and is attached to the probability of cover plate 130.And, in the 1st evaporation
When material is attached to cover plate 130, it is also possible to easily clear up, and improve maintainability.
(experimental example)
Then, the electron beam evaporation source 100 of the present embodiment as embodiment 1 is used, as
Electron beam evaporation source 300 shown in Fig. 8 of comparative example 1, is carried out for confirming present embodiment
The experiment of action effect.
(experimental example 1-1)
Electron beam evaporation source 100,300 is arranged in chamber 11, drives electron gun 120, and
The substrate of the assigned position of chamber 11 configuration arranges multiple temperature sensor, for confirmation
The rising of the temperature of each substrate.It addition, substrate uses glass substrate.
Fig. 9 is the schematic diagram of the position representing placement substrate and temperature sensor in chamber 11.Temperature
Degree sensor T1 is arranged in the top 11a of chamber 11.Temperature sensor T1 and the 1st keeps region
Distance between 111 is about 650mm.Temperature sensor T2 is arranged in the big of 1 support 13
Cause central part.Temperature sensor T2 and the 1st keeps the distance between region 111 to be about 600mm,
The straight line in connection temperature sensor T2 and the 1st holding region 111 is with the angle theta 2 of X-direction about
It it is 70 °.Temperature sensor T3 is arranged in the Z-direction bottom of above-mentioned support 13.Temperature passes
Sensor T3 and the 1st keeps the distance between region 111 to be about 600mm, connects temperature sensor
T3 and the 1st keeps the straight line in region 111 to be about 45 ° with the angle theta 3 of X-direction.
It addition, supporting device 12 is not driven.
When first, the power of electron beam is maintained setting by investigation, each temperature sensor T1,
The temperature of T2, T3.The power of electron beam be generate electron beam time bias value with by the electronics penetrated
The value of the product of the current value that bundle produces, in this experimental example, maintenance bias value is 10kV, electric current
Value is 300mA, and maintaining power is 3kW.It addition, the pressure in vacuum chamber 11 is 6.5 × 10-3
Pa, the 1st evaporation material are molybdenum (Mo), under the conditions described above, investigate each electron beam evaporation
The result after 25 minutes is run in source 100,300.
Table 1 and Figure 10,11 represents the result of experimental example 1-1.Following Δ t represents that operation starts
After temperature rise.
Figure 10 represents the result of embodiment 1, and Figure 11 represents the result of comparative example 1.It addition, appoint
A chart of anticipating is all that the longitudinal axis represents by the temperature of temperature sensor T1, T2, T3 detection, transverse axis
Express time.
Table 1
As shown in table 1 and Figure 10,11, result is as follows: by each temperature sensor of embodiment 1
The temperature of T1, T2, T3 detection compares with comparative example 1, is greatly lowered.Embodiment 1 and ratio
In relatively example 1, owing to power and the deposition material of electron beam are identical, therefore on the surface of deposition material
Can the raw reflection electronic of same real estate.Therefore, in comparative example 1, reflection electronic arrives substrate, should
The energy of reflection electronic makes the temperature of substrate rise, and on the other hand, in embodiment 1, passes through magnetic
Road portion 140 catches reflection electronic, and the reflection electronic arriving substrate is less.
(experimental example 1-2)
Then, in experimental example 1-2, on the cover board arrange different from the angle that X/Y plane is formed
Detecting electrode, detect in each detecting electrode the current value of flowing.Detecting electrode is set to,
The angle formed with X/Y plane is respectively 20 °, 30 °, 40 °, 50 °, 60 °, 70 °, 80 ° and 90 °,
And be connected with earth potential respectively.
In experimental example 1-2, the electron beam evaporation source of embodiment 1, comparative example 1,2 is arranged in
It is deposited with in chamber 11.
The electron beam evaporation plating source of comparative example 2 has and the evaporation of electron beam evaporation source 100 same structure
Material maintaining part 110, electron gun 120 and cover plate 130, but not there is magnetic circuit part.
The result of experimental example 1-2 is represented at Figure 12.In the chart of Figure 12, the longitudinal axis represents electric current
Value, transverse axis represents the angle of each electrode.
As shown in figure 12, in embodiment 1, electric current is not gone out from arbitrary electrode detection.
Hereby it is possible to confirm that substantially the entirety of reflection electronic is captured by magnetic circuit part 140.On the other hand,
In comparative example 2, from the more low-angle electrode of 20 ° to 60 °, detecting larger current, energy
Enough confirm that reflection electronic disperses centered by above-mentioned zone in a large number.It addition, in comparative example 1, inspection
The current value ratio comparative example 2 measured is little, but in each angle in addition to 90 °, detects than embodiment 1
Bigger current value, hereby it is possible to confirm that reflection electronic disperses.
By above experimental example 1-1～1-3, confirming in embodiment 1, reflection electronic passes through magnetic
Road portion 140 is captured, it is possible to inhibitory reflex electronics arrives substrate.Accordingly, according to present embodiment
Embodiment 1, can easily be safeguarded by smooth cover plate 130, and, it is possible to anti-
Only the temperature of substrate rises, and is prevented from because reflection electronic causes being deposited with the bad of the film quality of film
Change.
＜ the 2nd embodiment ＞
(structure of electron beam evaporation source)
Figure 13 is the solid of the structure of the electron beam evaporation source of the 2nd embodiment representing the present invention
Figure.It addition, in the following description, the structure as electron beam evaporation source 100 is with identical
Labelling represents, and omits its description at this.
As shown in Figure 13, electron beam evaporation source 200 has and ties as electron beam evaporation source 100
Evaporation material maintaining part 110, electron gun 120 and the cover plate 130 of structure, but the configuration of magnetic circuit part 240
And structure is different.It addition, the most although not shown, but electron beam evaporation source 200 also can have cold
But portion 133.
As shown in figure 13, magnetic circuit part 140 keeps region 111 and electron gun 120 at X across the 1st
Direction of principal axis spread configuration.Magnetic circuit part 240 has magnetic sheet 141, reflection electronic deflection component 242
With cover 243.Configuration and the structure of magnetic sheet 141 are identical with the 1st embodiment.
In the present embodiment, reflection electronic deflection component 242 is arranged on cover plate 130.Reflection
Electronic deflection parts 142 are to make electron beam B by the reflection electronic court of the 1st evaporation material reflection
The structure of magnetropism plate 141 deflection.Reflection electronic deflection component 242 such as can have at Fig. 4 etc.
1st Magnet the 145 and the 2nd Magnet 146 (the most not shown) of middle diagram.
Cover the reflection electronic deflection component 242 that 243 covers are arranged on cover plate 130.Cover 243
There is no particular limitation for material, such as, be made up of copper etc..Fly when being prevented from evaporation by cover 243
The 1st evaporation material dissipated is attached to reflection electronic deflection component 242.
Electron beam evaporation source 200 even with said structure, it is also possible to deflected by reflection electronic
Parts 242 make reflection electronic be acted on by Lorentz force, and catch with cover plate 130 and cover 243
Catch reflection electronic.
(experimental example)
Then, the action effect of electron beam evaporation source 200 for confirming present embodiment is carried out
Experiment.It addition, use electron beam evaporation source 200 in example 2.
(experimental example 2-1)
Carry out the experiment as the experimental example 1-1 of the 1st embodiment.That is, by electron beam evaporation
Source 200 is arranged in chamber 11, drives electron gun 120, and joins in the assigned position of chamber 11
Temperature sensor T1, T2, T3 are set on the substrate put, for temperature upper confirming substrate
Rise.The configuration of temperature sensor T1, T2, T3 is as experimental example 1-1.
First, investigation when the power of electron beam being maintained setting, each temperature sensor T1,
The temperature of T2, T3.The power of electron gun maintains 3kW, and the pressure in vacuum chamber 11 is
6.5×10-3Pa, the 1st evaporation material are molybdenum (Mo), under the conditions described above, investigate each electronics
The result after 25 minutes is run in beam evaporation source.
Table 2 and Figure 14 represents the result of experimental example 2-1.It addition, the most also record above-mentioned
The result of comparative example 1.
As shown in table 2 and Figure 14, result is as follows: each temperature sensor T1 of embodiment 2, T2,
The temperature that T3 detects is relatively low compared with comparative example 1.Accordingly, confirm in example 2, also can
Enough catch reflection electronic by magnetic circuit part 240 such that it is able to the temperature of suppression substrate rises.
Table 2
It is above the explanation that embodiments of the present invention are carried out, but the invention is not limited in this,
Technological thought based on the present invention can carry out various deformation.
Evaporation material maintaining part is not limited to the structure with multiple crucible, such as, can also be crucible
It is 1 and has and constitute ring-type lapies (ring hearth) or there is the structure of single crucible, or
Can also be to have to elect, in Z-direction, the mechanism that evaporation material carries out dissolving the most upward
Deng structure.
It addition, evaporation material maintaining part is not limited to keep the structure of multiple evaporation material, it is also possible to
For only keeping the structure of 1 evaporation material.Accordingly also be able to suppress magnetic circuit part by magnetic sheet
The impact in the magnetic field that lower section produces such that it is able to stably catch reflection electronic.
It addition, the configuration of reflection electronic deflection component is not limited to above-mentioned configuration.Such as, it is possible to
The bar magnet that both ends have N pole and S pole configures along Y direction.Use this structure, should
The one end of bar magnet forms the 1st magnetic face, and the other end forms the 2nd magnetic face such that it is able to
Reflection electronic magnetropism plate is made to deflect.It addition, by this bar magnet is arranged along X-direction configuration
Arrange multiple, it is possible to formed until the magnetic field at rear of X-direction.
Or, the 1st Magnet and the 2nd Magnet of reflection electronic deflection component separate along Y direction
Width, it is possible to be not the most certain width along X-direction, the such as the 1st Magnet and the 2nd
Magnet can also configure in the way of X-direction rear broadens by above-mentioned width.
It addition, the dispensable structure of cover plate.Such as, electron beam evaporation source also can not have cover plate,
But caught reflection electronic by magnetic sheet, and have and prevent evaporating material and keep relative to evaporation material
The function dispersed in portion.
It addition, cooling end is also not limited to water-cooled.Or, electron beam evaporation source is alternatively not to be had
There is the structure of cooling end.
[description of reference numerals]
1 vacuum deposition apparatus；11 vacuum chambers；12 supporting devices；100,200 electron beam evaporation
Source；110 evaporation material maintaining parts；111 the 1st keep region；112 the 2nd keep region；120
Electron gun；130 cover plates；133 cooling ends；140,240 magnetic circuit part；141 magnetic sheets；142、
242 reflection electronic deflection components；143 the 1st magnetic faces；144 the 2nd magnetic faces；145 the 1st magnetic
Ferrum；146 the 2nd Magnet.
Claims (8)
1. an electron beam evaporation source, it is characterised in that have:
Evaporation material maintaining part, it has the 1st holding region that can keep the 1st evaporation material；
Electron gun, it keeps region to be arranged at described 1st direction of principal axis with the described 1st, and energy
Enough to described 1st holding region injection electron beam；With
Magnetic circuit part, this magnetic circuit part has: magnetic sheet, and it is made up of soft magnetic material；With reflection electricity
Sub-deflection component, its can make described electron beam by the 1st evaporation material reflection after reflection electronic to
Described magnetic sheet deflects, this magnetic circuit part and described electron gun across the described 1st keep region and in institute
State the 1st direction of principal axis to be arranged.
Electron beam evaporation source the most according to claim 1, it is characterised in that
Described evaporation material maintaining part also has can keep being deposited with waiting 2nd evaporation material
2nd keeps region,
Described magnetic circuit part keeps region at 2nd axle vertical with described 1st direction of principal axis with the described 2nd
Direction configures in opposite directions.
Electron beam evaporation source the most according to claim 1 and 2, it is characterised in that
Also there is cover plate, this cover plate have expose described 1st keep region peristome, its with
The 2nd direction of principal axis that described 1st direction of principal axis is vertical is oppositely arranged with described evaporation material maintaining part, and
The most smooth structure.
Electron beam evaporation source the most according to claim 3, it is characterised in that
Described magnetic circuit part is arranged between described evaporation material maintaining part and described cover plate.
Electron beam evaporation source the most according to claim 4, it is characterised in that
Also there is the cooling end that can cool down described cover plate.
6., according to the electron beam evaporation source described in any one in Claims 1 to 5, its feature exists
In,
Described reflection electronic deflection component has:
1st magnetic face of the 1st polarity, it is vertical with described 2nd direction of principal axis；With
2nd magnetic face of the 2nd polarity, it is vertical with described 2nd direction of principal axis, and with the described 1st
Polarity is different,
Wherein, described 1st magnetic face and described 2nd magnetic face along with the 1st direction of principal axis and described
The 3rd direction of principal axis that 2nd direction of principal axis is vertical is arranged.
Electron beam evaporation source the most according to claim 6, it is characterised in that
Described reflection electronic deflection component has:
1st Magnet, it is formed with described 1st magnetic face；With
2nd Magnet, it is formed with described 2nd magnetic face, and with described 1st Magnet described
3 direction of principal axis configured separate.
8. a vacuum deposition apparatus, it is characterised in that have:
Vacuum chamber；
Supporting device, it is arranged in described vacuum chamber, and can support evaporation object；With
Electron beam evaporation source, it is arranged at described 2nd direction of principal axis in opposite directions with described supporting device
In described vacuum chamber, and
Described electron beam evaporation source has:
Evaporation material maintaining part, this evaporation material maintaining part has: the 1st keeps region, and it can
Keep the 1st evaporation material；Keeping region with the 2nd, it keeps region at the 1st axle with the described 1st
Direction adjoins, and can keep the 2nd evaporation material；
Electron gun, it keeps region to be arranged at described 1st direction of principal axis with the described 1st, and energy
Enough to described 1st holding region injection electron beam；With
Magnetic circuit part, this magnetic circuit part has: magnetic sheet, and it is made up of soft magnetic material；With reflection electricity
Sub-deflection component, its can make described electron beam by the 1st evaporation material reflection after reflection electronic to
Described magnetic sheet deflects, and this magnetic circuit part keeps region hanging down with described 1st direction of principal axis with the described 2nd
The 2nd straight direction of principal axis configures in opposite directions.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014249876 | 2014-12-10 | ||
| JP2014-249876 | 2014-12-10 | ||
| PCT/JP2015/006030 WO2016092788A1 (en) | 2014-12-10 | 2015-12-04 | Electron beam evaporation source and vacuum deposition device |
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| Publication Number | Publication Date |
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| CN105874097A true CN105874097A (en) | 2016-08-17 |
| CN105874097B CN105874097B (en) | 2018-12-21 |
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| JP (1) | JP6195662B2 (en) |
| KR (1) | KR101849030B1 (en) |
| CN (1) | CN105874097B (en) |
| TW (1) | TWI609094B (en) |
| WO (1) | WO2016092788A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106535457A (en) * | 2016-10-28 | 2017-03-22 | 中广核中科海维科技发展有限公司 | Back-bombardment-preventing electron linear accelerator |
| CN106702328A (en) * | 2017-02-17 | 2017-05-24 | 大连交通大学 | Magnetic-deflection electron beam evaporation source |
| CN115786857A (en) * | 2022-12-06 | 2023-03-14 | 安徽其芒光电科技有限公司 | Vacuum evaporation film forming device |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102017103746A1 (en) * | 2017-02-23 | 2018-08-23 | VON ARDENNE Asset GmbH & Co. KG | Electron beam evaporator, coating apparatus and coating method |
| JP6815473B1 (en) * | 2019-12-24 | 2021-01-20 | 株式会社アルバック | Electron gun device and thin film deposition device |
| CN111611733B (en) * | 2020-04-20 | 2023-05-26 | 费勉仪器科技（上海）有限公司 | Method for constructing magnetic circuit structure of small and medium-sized magnetic deflection electron beam evaporation source |
| KR20220095710A (en) | 2020-12-30 | 2022-07-07 | 주식회사 선익시스템 | Deposition apparatus having electron beam evaporation source |
| KR102422431B1 (en) | 2021-07-07 | 2022-07-19 | 주식회사 서일 | Vacuum vapor deposition apparatus having friction charging units |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5418348A (en) * | 1992-10-29 | 1995-05-23 | Mdc Vacuum Products, Inc. | Electron beam source assembly |
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| JPH05280149A (en) | 1992-03-30 | 1993-10-26 | Kabuki Kensetsu Kk | Precast reinforced concrete pole |
| JP2999353B2 (en) * | 1992-11-05 | 2000-01-17 | エムディーシー ヴァキューム プロダクツ コーポレイション | Rotary fluid supply device for ultra-high vacuum |
| JP2000328237A (en) * | 1999-05-19 | 2000-11-28 | Sony Corp | Vapor deposition source device for electron beam vapor deposition machine |
| WO2013153604A1 (en) | 2012-04-09 | 2013-10-17 | 株式会社シンクロン | Electron gun device |
-
2015
- 2015-12-04 CN CN201580003277.2A patent/CN105874097B/en active Active
- 2015-12-04 JP JP2016518207A patent/JP6195662B2/en active Active
- 2015-12-04 WO PCT/JP2015/006030 patent/WO2016092788A1/en active Application Filing
- 2015-12-04 KR KR1020167014265A patent/KR101849030B1/en active IP Right Grant
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5418348A (en) * | 1992-10-29 | 1995-05-23 | Mdc Vacuum Products, Inc. | Electron beam source assembly |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106535457A (en) * | 2016-10-28 | 2017-03-22 | 中广核中科海维科技发展有限公司 | Back-bombardment-preventing electron linear accelerator |
| CN106702328A (en) * | 2017-02-17 | 2017-05-24 | 大连交通大学 | Magnetic-deflection electron beam evaporation source |
| CN106702328B (en) * | 2017-02-17 | 2019-08-30 | 大连交通大学 | Magnetic deflection electron beam evaporation source |
| CN115786857A (en) * | 2022-12-06 | 2023-03-14 | 安徽其芒光电科技有限公司 | Vacuum evaporation film forming device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2016092788A1 (en) | 2017-04-27 |
| JP6195662B2 (en) | 2017-09-13 |
| TW201631188A (en) | 2016-09-01 |
| KR20160086857A (en) | 2016-07-20 |
| TWI609094B (en) | 2017-12-21 |
| KR101849030B1 (en) | 2018-04-13 |
| CN105874097B (en) | 2018-12-21 |
| WO2016092788A1 (en) | 2016-06-16 |
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