KR102422431B1 - Vacuum vapor deposition apparatus having friction charging units - Google Patents

Abstract

The present invention relates to a vacuum vapor deposition apparatus for treating a pretreatment layer by a depositing means, which is formed in a band shape surrounding the outer circumferential surface of an inlet guide roll after forming a metal seed pretreatment layer with metal or metal oxide on a film. The vacuum vapor deposition apparatus comprises: an inline plasma treatment device which is equipped with a sputtering device to sputter the film with a metal target; an inlet guide roll which deposits the pretreatment layer while pressing the pretreatment layer; and a thin film unit located within the vacuum chamber to form a deposition layer on the film surface. The present invention can uniformly deposit the film on a large area without using an electron beam and enhances adhesion with a cooling roll during vacuum deposition. Moreover, the present invention can obtain a deposition film with improved barrier properties since electrostatic force is generated between an electrostatic adsorption surface formed on the metal seed layer film surface and metal evaporated.

Description

Vacuum vapor deposition apparatus having friction charging units

The present invention relates to a vacuum deposition apparatus for depositing a deposition material on a film while charging a film pretreated with a metal or metal oxide seed layer and cooling it with a cooling roll.

In general, a representative method of forming a thin film may be classified into a PVD (Physical Vapor Deposition) method using a physical method and a CVD (Chemical Vapor Deposition) method using a chemical method.

The PVD method of forming a thin film has cleaner working conditions than the CVD method, and uses resistance heat, electron beam, laser beam, or plasma in a vacuum to convert a solid material into a gaseous state to form a thin film that is directly deposited on a substrate way.

The PVD thin film forming method may be classified into a thin film forming method such as a vacuum deposition method, a sputtering method, and an ion plating method.

In particular, a vacuum deposition apparatus using a vacuum deposition method capable of forming a metal or inorganic oxide deposition layer on the surface of a material film in a vacuum to have gas barrier properties or moisture-proof properties for a material film made of film-shaped paper or plastic is a process This simple and fast deposition rate is used for the production of packaging materials used for packaging food, pharmaceuticals, and precision electronic components.

Among them, a winding-up vacuum deposition apparatus in which an evaporation material from an evaporation source is deposited on a long film continuously unwound by an unwinding roll, and the film after deposition is wound by a take-up roll is widely used.

In such a vacuum deposition apparatus, a coating roll through which a substrate to be deposited passes in a chamber maintained in a high vacuum using a pump and an evaporation source (source), which is a material to be deposited, are located below it. When the source is heated in a high vacuum, the source particles in the vaporized state move in a straight line to the top of the substrate. The vaporized gas atoms and molecules are condensed on the surface of the substrate at a relatively low temperature to form a deposited thin film. In this process, an oxide thin film or the like can be formed relatively easily by introducing a reactive gas such as oxygen during evaporation in the film formation chamber, so it is also called reactive deposition. At this time, the evaporation method is divided into two types according to the heating method of the source, and there is a thermal evaporation method (thermal evaporator) and an electron beam evaporation method (electron beam evaporator).

The thermal evaporation method is a method in which electricity flows to a boat on which a material to be evaporated is placed, and the source is heated using the resistance heat generated in the boat so that the deposition is performed. This is a method in which an electron beam is used as an energy source for evaporation, and an accelerated electron beam is incident on a source to convert electrical energy (electrons) into thermal energy so that deposition is performed by evaporation of the source.

By using the electron beam evaporation method, it is possible to create a high-density film coating with increased adhesion to the substrate because it can be produced at a high deposition rate using a high energy source. However, when reflected electrons are generated by irradiating an electron beam to the evaporation material and these reflected electrons (scattered electrons and semiconducting electrons, etc.) reach the substrate, the temperature of the substrate is raised, and there is a possibility that a problem may occur in the film quality and the like. In addition, if the thin film produced is a metal oxide, it accumulates reflected electrons to become a dielectric, causing problems in post-processing processes such as lamination and printing.

Therefore, in Patent Document 1 (Japanese Patent No. 4225051), in order to remove the charging of the film substrate by reflection electrons in the vacuum deposition apparatus by the electron beam evaporation method, the substrate is sprayed with a gas toward the portion falling from the film forming roll to the substrate. Try to remove the generated static electricity. In addition, in Patent Document 2 (Republic of Korea Patent Publication No. 10-2016-86857), a magnetic circuit is formed in a vacuum deposition apparatus by electron beam evaporation to deflect reflected electrons toward the magnetic plate, thereby preventing them from reaching the substrate. A number of other methods for removing static electricity due to reflection electrons are known.

On the other hand, in the above two types of vacuum deposition apparatus, in order to prevent thermal deformation of the film during deposition, the film is brought into close contact with the circumferential surface of the cooling can roller to perform film formation (film formation) while cooling. Therefore, it is an important issue how to ensure the adhesion of the film to the cooling can roller.

Moreover, it has become an important problem with respect to the method for further improving the adhesive force between a base material and film-forming at the time of vapor deposition.

In order to solve this problem in relation to the prevention of thermal deformation of the film, Patent Document 3 (Japanese Patent Application Laid-Open No. 1990-247383) discloses that the film is charged by electron beam irradiation in advance before the deposition process, or when the thin film is conductive, the potential difference between the coating roll and the film is Disclosed is a method in which the film can be brought into close contact with the cooling roll by electrostatic force to effectively remove the heat load. In addition, Patent Document 4 (Japanese Laid-Open Patent Publication No. 2005-76120) further limits the type of the irradiated electron beam, so that one or more kinds of charged particles generated by hollow cathode discharge and accelerated to a voltage higher than -5.0 kV A method for charging a raw film is disclosed.

However, since it is not easy to control an appropriate applied voltage in the potential difference application method, if an excessive applied voltage is applied to the film, a problem in which the film is damaged may occur. The electron beam method also accelerates the electrons so that the electrons are embedded in the film. In addition, if the film is strongly charged, it may be difficult to increase the running speed due to the electrostatic force between the cooling roll and the film.

On the other hand, in Patent Document 5 (Japanese Patent No. 5298656) in order to improve the adhesion between the substrate and the film, a 0.5 nm ~ 5.0 nm metal oxide anchor coat layer is formed at the same time as the surface treatment on the substrate film when the thin film is formed by sputtering. To improve the adhesion is disclosed. In addition, in Patent Document 6 (Japanese Patent Application Laid-Open No. 2018-192693), one or a plurality of alloys or oxides thereof selected from aluminum, silicon, copper, iron, niobium, and titanium as a pretreatment layer on the substrate is applied to 0.01 nm or more and 10 nm It is disclosed that adhesion is improved when laminated below. However, when such a thin metal or its oxide layer is installed on the substrate as a pretreatment layer, the adhesion between the substrate and the film is slightly improved during film formation, but the heat removal effect of the film by the cooling roll is difficult to be transmitted directly to the film formation surface. There is a problem in that it is difficult to expect improvement in barrier properties through the formation of a dense thin film.

Accordingly, there is a need for a method for uniformly charging a film over a large area without using a high-energy electron beam when charging the film prior to deposition. it is necessary.

Japanese Patent Publication No. 4225051 (published on July 15, 2004) Republic of Korea Patent Publication No. 10-2016-86857 (published on July 20, 2016) Japanese Patent Application Laid-Open No. 1990-247383 (published on Oct. 3, 1999) Japanese Patent Application Laid-Open No. 2005-76120 (published on March 24, 2005) Japanese Patent Publication No. 5298656 (published on July 7, 2010) Japanese Patent Application Laid-Open No. 2018-192693 (published on Dec. 06, 2018)

In order to solve the above problems, the present invention forms a metal seed pretreatment layer with a metal or an oxide thereof on a film, and then charges the pretreatment layer with a charging means configured in a band shape surrounding the outer circumferential surface of the inlet guide roll. The film can be uniformly charged over a large area without the use of an electron beam, and the adhesion with the cooling roll is improved during vacuum deposition, and the metal and electrostatic attraction that evaporates at the electrostatic adsorption interface formed on the metal seed layer film formation surface are generated, resulting in barrier properties. An object of the present invention is to provide a vacuum deposition apparatus capable of obtaining a further improved deposition film.

The problems to be solved in the present invention are not limited to the above technical problems, and other technical problems not mentioned can be clearly understood by those of ordinary skill in the art to which the present invention belongs from the following description.

The present invention introduces the film unwound from the unwinding roll in vacuum into the film forming unit while pressing the pretreatment layer on the surface of the film derived after pretreatment in the inline plasma treatment machine with the entrance guide roll, and forming the deposition layer on the film surface in the film forming unit, A vacuum deposition apparatus for winding a deposition film derived from a film forming unit on a winding roll, wherein the inline plasma processor includes a sputtering device for sputtering the film with a metal target; The entrance guide roll includes a charging means woven with an electrifying fiber for charging the pretreatment layer; The charging means is configured in a band shape surrounding the outer circumferential surface of the entrance guide roll; The film forming part is located in a separate vacuum chamber and includes a cooling roll for cooling the film by closely adhering the film sent from the entrance guide roll, a container disposed opposite the cooling roll and evaporating the material deposited on the film; Disclosed is a vacuum deposition apparatus comprising: a heating means for heating a container; and a material supply part for supplying a material to be deposited on the container.

In addition, when the heating means is an electron beam, there is disclosed a vacuum deposition apparatus comprising a separate reflection electron blocking device.

In addition, the heating means discloses a vacuum deposition apparatus, characterized in that the resistance heat generated inside the source container.

In addition, the charging means discloses a vacuum deposition apparatus, characterized in that the rotation in synchronization with the entrance guide roll according to the movement of the film.

In addition, the charging means discloses a vacuum deposition apparatus characterized in that it contains charged particles.

In addition, the charging means discloses a vacuum deposition apparatus, characterized in that woven in a network structure.

In addition, the in-line plasma treatment machine discloses a vacuum deposition apparatus, characterized in that the plasma treatment is also performed on the film surface at the same time.

In addition, the entrance guide roll discloses a vacuum deposition apparatus, characterized in that composed of two or more having the same or different diameter.

In addition, the entrance guide roll discloses a vacuum deposition apparatus, characterized in that the form forming a pair with a nip roll capable of applying a constant pressure to the film.

The present invention introduces the film unwound from the unwinding roll in vacuum into the film forming unit while pressing the pretreatment layer on the surface of the film derived after pretreatment in the inline plasma treatment machine with the entrance guide roll, and forming the deposition layer on the film surface in the film forming unit, A vacuum deposition apparatus for winding a deposition film derived from a film forming unit on a winding roll, wherein the inline plasma processor includes a sputtering device for sputtering the film with a metal target; The entrance guide roll includes a charging means woven with an electrifying fiber for charging the pretreatment layer; The charging means is configured in a band shape surrounding the outer circumferential surface of the entrance guide roll; The film forming part is located in a separate vacuum chamber and includes a cooling roll for cooling the film by closely adhering the film sent from the entrance guide roll, a container disposed opposite the cooling roll and evaporating the material deposited on the film; Disclosed is a vacuum deposition apparatus comprising: a heating means for heating a container; and a material supply part for supplying a material to be deposited on the container.

In addition, when the heating means is an electron beam, there is disclosed a vacuum deposition apparatus comprising a separate reflection electron blocking device.

In addition, the heating means discloses a vacuum deposition apparatus, characterized in that the resistance heat generated inside the source container.

In addition, the charging means discloses a vacuum deposition apparatus, characterized in that the rotation in synchronization with the entrance guide roll according to the movement of the film.

In addition, the charging means discloses a vacuum deposition apparatus characterized in that it contains charged particles.

In addition, the charging means discloses a vacuum deposition apparatus, characterized in that woven in a network structure.

In addition, the in-line plasma treatment machine discloses a vacuum deposition apparatus, characterized in that the plasma treatment is also performed on the film surface at the same time.

In addition, the entrance guide roll discloses a vacuum deposition apparatus, characterized in that composed of two or more having the same or different diameter.

In addition, the entrance guide roll discloses a vacuum deposition apparatus, characterized in that the form forming a pair with a nip roll capable of applying a constant pressure to the film.

1 is a schematic configuration diagram of a main part of a vacuum deposition apparatus having a triboelectric charging means according to an embodiment of the present invention.
Figure 2 is a perspective view of the entrance side guide roll provided with the charging means according to the first embodiment of the present invention.
3 is a cross-sectional view of the entrance guide roll provided with the charging means shown in FIG.
4 is a view showing a configuration modification of the entrance guide roll provided with the charging means shown in FIG.
5 is a block diagram of the entrance guide roll provided with the charging means according to the second embodiment of the present invention.
6 is a block diagram of the entrance guide roll provided with the charging means according to the third embodiment of the present invention.
It is a schematic diagram explaining the effect|action of the roll for cooling of this invention.
8 is a schematic diagram illustrating a process in which a film is formed by evaporation of the deposition material of the present invention.
It is a cross-sectional explanatory drawing which shows an example of embodiment of the gas barrier film of this invention.

Hereinafter, preferred examples are presented to help the understanding of the present invention. However, the following examples are only provided for easier understanding of the present invention, and the content of the present invention is not limited by the examples. Various modifications are possible based on the technical idea of the present invention.

1 is a schematic configuration diagram of a vacuum deposition apparatus 10 according to an embodiment of the present invention. The vacuum deposition apparatus 10 of the present embodiment includes a vacuum chamber 11, a film unwinding roll 13 of the film 12, a cooling roll 14, a winding roll 15, and an entrance guide roll 16a. , 16b), and a film forming unit 18 .

The vacuum chamber 11 is connected to a vacuum exhaust system such as a vacuum pump (not shown) via the pipe connecting portions 11a and 11b, and the inside thereof is depressurized and exhausted to a predetermined vacuum degree. The inner space of the vacuum chamber 11 is divided by a partition plate 11c into a room in which the unwinding roll 13, the take-up roll 15, etc. are arranged, and the film-forming part 18 in which the film-forming 50 is formed. is losing

The film 12 is a long plastic film cut to a predetermined width, and a PET (polyethylene terephthalate) film is used in this embodiment. In addition to these, polyolefin (polyethylene, polypropylene, etc.), polyester (polyethylene terephthalate, polyethylene naphthalate, etc.), polyamide (nylon-6, nylon-66, etc.), polystyrene, polyphenylene sulfide, ethylene Plastic films or paper sheets, such as vinyl alcohol, polyvinyl chloride, polyimide, polyvinyl alcohol, polycarbonate, polyethersulfone, acrylic, and cellulose (triacetyl cellulose, diacetyl cellulose, etc.) are applicable. The thickness of the film is preferably 20 µm to 500 µm.

The film 12 is continuously fed out from the unwinding roll 13 to a plurality of inlet guide rolls 16a and 16b, a cooling roll 14, an auxiliary roll 21 and a plurality of outgoing guide rolls 20a and 20b, It is wound on the take-up roll 15 through 20c, 20d). The take-up roll 13 and the take-up roll 15 are respectively provided with rotation driving parts, although not shown.

The cooling roll 14 is usually made of metal such as iron, and a cooling mechanism such as a cooling medium circulation system or a rotational driving mechanism for rotating the cooling roll 14 is provided therein, and acts as a ground potential.

The film 12 is wound at the peripheral corner of the cooling roll 14, and the film 12 wound on the cooling roll 14 and adhered thereto is formed 50 with the deposition material 27 on the film forming surface on the outer side thereof. It is cooled by the roll 14 for cooling. The film forming unit 18 where the film 50 is formed is an evaporation container 19 in which the material deposited on the film 12 is evaporated and the material accommodated in the container 19 is heated by resistance heating, induction heating, electron beam heating, etc. It has a heating mechanism for heating and evaporating by a known method, and a material supply unit for supplying a material to be deposited in the container (19). The evaporation vessel 19 is disposed below the cooling roll 14 and attaches the vapor of the vapor deposition material 27 onto the film 12 on the cooling roll 14 opposite to form a film.

As the deposition material 27, in addition to single metal elements such as Al, Co, Cu, Ni, Ti, and Si, two or more types of metals such as Al-Zn, Cu-Zn, Fe-Co, or multi-component alloys are applied, The evaporation vessel 19 is also not limited to one, and may be provided in plurality.

The vacuum deposition apparatus 10 of the present embodiment further includes an in-line plasma processor 17, charging means 22a, 22b, and a separate film-forming part vacuum chamber 11c.

The in-line plasma processor 17 is for sputtering the film 12 with a metal target to form the metal seed pretreatment layer 30, and is installed between the unwinding roll 13 and the inlet guide rolls 16a and 16b.

The film 12 passes through the in-line plasma processor 17 to form a metal seed pretreatment layer 30 and is pretreated with metal or metal oxide.

In this case, as a metal target (cathode target), in addition to single metal elements such as Al, Si, Ti, Cr, Mn, Fe, Co, Ni, Cu, Ru, Rh, Pd, Ag, Sn, La, Pt, Au, etc. Two or more types of metals such as Al-Zn, Cu-Zn, Fe-Co, and Fe-Cr, or multi-component alloys such as Fe-Cr-Ni, Fe-Cr-Mn, and Cu-Ni-Zn can be used. A metal or metal oxide seed is formed by applying a power such as an MF power supply or an RF power supply to the metal target. The pretreatment according to the present invention, that is, the method for forming a seed of a metal or metal oxide, proceeds in the following order.

In the first step, a metal target to be formed as a seed layer is installed on a cathode capable of forming an electrode.

In the second step, MF power or RF power is applied to the installed metal target.

The third step injects gas into the cathode. A mixed gas composed of argon gas, oxygen gas, nitrogen gas, or the like is injected. The concentration of the gas ranges from 200 sccm or more to 2,000 sccm or less.

In the fourth step, the injected gas is ionized by power, and the mixed gas becomes ions in a plasma state with Ar ⁺ and 0 ₂ ⁺ by the power. The metal material is sputtered on the metal target by Ar ⁺ ions.

In the fifth step, when oxygen gas is selectively injected, the sputtered metal is combined with oxygen to form a metal oxide on the surface of the substrate.

In addition, rather than partial deposition in the form of an island, the formation of the pretreatment layer 30 in the form of a film having an average film thickness of 0.01 nm or more and 10 nm or less is more effective in uniformly forming the charge density by the movement of charged particles later. desirable.

In addition, the in-line plasma treatment machine 17 forms a plasma by injecting O ₂ , Ar, N ₂ gas, etc., and simultaneously performs plasma treatment on the film surface, thereby forming a new bond and a physical effect of removing foreign substances from the film surface. Thus, a chemical effect of improving adhesion can be expected.

The charging means 22a and 22b are for charging the metal seed pretreatment layer 30, are woven with an electrifying fiber, and have a band shape surrounding the outer circumferential surface of the inlet guide rolls 16a and 16b. Therefore, it is easy to put on and take off, so it can be easily replaced and used.

Electrostatic fibers mainly use synthetic fibers such as polyester fibers, polyamide fibers, polyacrylic fibers, polyolefin fibers, polyimide fibers, and polyaryl ether ketone fibers, and natural fibers such as wool and silk can also be used. The fibers may be knitted and woven into a hybrid composite or may be woven in a core-shell form. Preferably, a polyamide fiber having strong electrification and a large amount of charge may be used, and more preferably, nylon may be used.

In addition, it is preferable to use a material with high adhesion to the mouth-side guide rolls 16a and 16b due to elasticity when configured in a band shape.

Figure 2 is a perspective view of the input side guide rolls (16a, 16b) provided with the charging means (22a, 22b) according to the first embodiment of the present invention, Figure 3 is a cross-sectional view thereof. The charging process of the film 12 according to the present invention will be described in detail with reference to FIGS. 2 and 3 .

As shown in Figure 2, in one embodiment, the charging means (22a, 22b) can rotate in synchronization with the entrance guide rolls (16a, 16b) according to the movement of the film (12), while the film (12) is moving The film 12 is charged by the movement of charged particles due to contact and friction with the charging means 22a and 22b.

In addition, as shown in FIG. 3 , the contact surface of the pretreatment layer 30 of the film 12 and the charging means 22a and 22b is easily charged only by friction generated while the film 12 travels at high speed, so that the metal seed pretreatment layer It gives electrons to (30) and becomes positively (+) charged. Through this, the capacitance of the metal seed pretreatment layer 30 is changed more greatly, and at the same time, it is charged negatively (-) as a whole.

In this embodiment, the metal seed pretreatment layer 30 is negatively charged by absorbing electrons of the elastic fibers woven with nylon. That is, the electrons contained in the charging means 22b move to the metal pretreatment layer 30 having higher electrical conductivity by contact and friction with the metal pretreatment layer 30 . Since the moved electrons can freely move in the metal seed pretreatment layer 30 , they can be uniformly spread over the entire film surface to uniformly charge the entire film surface.

In this case, the charging means (22a, 22b) woven from the electrifying fiber may be torn or not sufficiently charged if too thin, and preferably has a thickness of 100 µm or more.

In addition, the charging means (22a, 22b) is used when the deposition of one roll of the film 12 is completed, detached and refilled with charged particles to be reused or replaced with a new one.

Accordingly, the charging means 22a and 22b according to the present invention may further contain charged particles, thereby further enhancing the generation of static electricity. In this case, it is preferable that the charged particles are mainly composed of electrons.

In order to supply the charged particles to the charging means (22a, 22b), before the charging means (22a, 22b) is mounted on the inlet guide rolls (16a, 16b), the charged particles are charged in advance or the charged particles are charged when the vacuum deposition device (10) is operated. It can be irradiated to contain charged particles.

When charging charged particles, various methods known in the art can be used. For example, by accelerating one or more types of particles by electron beam or hollow cathode discharge (HCD) and irradiating the charging means 22a, 22b. can be recharged

In order to irradiate the charged particles while operating the vacuum deposition apparatus 10, a separate charged particle emitter is required. For example, a charged particle emitter is provided inside the entrance guide roll, so that the charged particles can be discharged from the slit formed in the entrance guide roll. . The discharged charged particles are absorbed by the charging means 22a and 22b and transferred to the film 12 to be charged.

The present invention does not directly charge the film 12 by an electron beam irradiator, but indirectly charges the film 12 by friction by contact through the charging means 22a and 22b surrounding the outer peripheral surface of the entrance guide roll. Since it has a charging potential of about 1.0 kV to 10.0 kV, damage to the film 12 can be prevented, and interference caused by excessive electrostatic force is improved, so that high-speed driving is possible. In addition, even if the film 12 is not statically removed by an additional static elimination unit, the static elimination effect can be obtained only by exposing the film 12 on which the film formation 50 is completed to the air and storing it for a certain period of time, so there is no problem in the post-processing process. does not

On the other hand, as a modification of the charging means (22a, 22b), as shown in FIG. 4, may be woven in a network structure to form numerous micropores. Adsorption of dust and the like can occur through these micropores and act as a gas outlet, so that the film 12 can maintain an appropriate pressure during high-speed driving while pressing the inlet guide rolls 16a and 16b.

5 is a configuration diagram of the entrance guide rolls 16a and 16b provided with the charging means 22a, 22b, 22c, 22d, and 22e according to the second embodiment of the present invention. As shown in FIG. 5 , the entrance guide roll may be composed of two or more having the same or different diameters. The contact area can be widened by the entrance guide roll 22d having a large diameter, and the charging time can be secured longer by installing a plurality of entrance guide rolls.

Figure 6 is a configuration diagram of the nip rolls (23a, 23b) provided with the charging means (22a, 22b) provided with the inlet guide rolls (16a, 16b) and the charging means (22f, 22g) according to the third embodiment of the present invention (23a, 23b) . As shown in FIG. 6 , the entrance guide roll may be in the form of forming a pair with the nip rolls 23a and 23b that can apply a constant pressure to the film 12 . While the film 12 is wound from the unwinding roll 13 to the take-up roll, the film 12 maintains a taut state by constant tension during high-speed driving. As the film 12 is wound toward the cooling roll 14 located below the entrance guide rolls 16a and 16b, the pretreatment layer 30 on the film surface is formed by pressing the entrance guide rolls 16a and 16b while the film forming part 18 is pressed. is introduced into At this time, if the pressing pressure becomes stronger, the large force due to contact and friction is improved. At this time, when the nip rolls (23a, 23b) are installed to form a pair on the upper side of the film (12) to a position corresponding to the position in which the entrance guide rolls (16a, 16b) are located below the film (12), the nip rolls (23a, 23b) 23b) and pressure control can further improve the power.

The deposition process takes place in the separate film-forming part vacuum chamber 11c that has been decompressed to a predetermined degree of vacuum. The separate film-forming part vacuum chamber 11c separates the room from which pre-treatment and charging are performed, so that the vacuum is evacuated independently, and through this, the pressure of the film-forming part 18 is reduced to a vacuum in the range of 10 ^-3 to 10 ^-6 mbar. By lowering the linear motion of the particles by evaporation as the basic power, it creates an optimal environment in which the metal particles 28 can adhere by the electrostatic attraction formed on the film-forming surface of the pretreatment layer 30 of the film 12 .

The method of heating the material made in the film forming unit 18 is preferably provided with a separate reflection electron blocking device when the heating means is an electron beam. Furthermore, that the heating means is resistance heat generated inside the evaporation vessel 19 is not ionized when the evaporation material 27 is evaporated to a gaseous atomic state. It is more suitable for the adhesion effect to work. However, in the electron beam deposition method, more dense deposition is possible due to the plasma effect.

7 : is a schematic diagram explaining the action of the roll 14 for cooling of this invention. 8 is a schematic diagram illustrating a process in which a film formation 50 is formed by evaporation of the deposition material 27 of the present invention. An action process of electrostatic force during the deposition process in the film forming unit 18 of the vacuum deposition apparatus 10 according to the present invention will be described in detail with reference to FIGS. 7 and 8 .

As shown in FIG. 7, when the pretreatment layer 30 on the film surface is pressed with the inlet guide roll 16b and in contact with the charging means 22b, the charging means 22b is friction generated while the film 12 travels at high speed. By being easily charged only by the electrons, electrons are given to the metal seed pretreatment layer 30 . When the film 12 on which the metal seed pretreatment layer 30 is not formed is charged with the charging means 22b woven from the electrifying fiber, the heat of charge varies depending on the type of the film 12 and the electrifying fiber, and the film ( 12) is different. In addition, since the movement of electrons is not free, charging occurs in the form of partial islands on the surface of the film, and uniform charging cannot be performed. On the other hand, when the metal seed pretreatment layer 30 is formed on the film surface, electrons are moved and the moved electrons are uniformly spread over the entire surface of the film, enabling uniform charging.

Referring to the enlarged view of the cooling roll entrance film section 24 of FIG. 7 , the dielectric film 12 in contact with the negatively charged metal seed pretreatment layer 30 is polarized and the pretreatment layer 30 ) the contact surface has a positive (+) charge, and the contact surface of the cooling roll 14 has a negative (-) charge.

Referring to the enlarged view of the cooling roll adhesion film cross-section 25 of FIG. 7 , the cooling roll is made of metal and is grounded, and some electrons of the cooling roll 14 escape through the ground potential and the cooling roll 14 The surface has a positive (+) charge. Therefore, the polarized film 12 can be in close contact with the contact surface of the cooling roll 14 having a negative (-) charge by electrostatic attraction. Through this, when winding with the cooling roll 14, the entire film 12 is in close contact and wrinkles do not occur, and a stable cooling action is ensured over the entire surface of the film 12 in the deposition process, so that the thermal deformation of the film 12 is ensured. can be prevented and excellent gas barrier properties can be secured.

When the film 12 and the cooling roll 14 are strongly adhered to each other, the electrons inside the film 12 can also escape through the ground potential, and the dielectric film 12 is polarized more strongly and the pretreatment layer 30 contact surface. The positive (+) charge becomes stronger. For this reason, the metal seed pretreatment layer 30 is also induced with a negative (-) charge different from that of the film 12 on the contact surface that is in contact with the film 12, and the film-forming surface is induced with a positive (+) charge.

As shown in FIG. 8 , the outermost surface of the film 12 on which the film 50 is formed is positively charged, and the metal particles 28 evaporated when a metal such as aluminum (Al) is deposited as the deposition material 27 . ) rises and moves in a straight line in a gaseous atom or molecular state, and the outermost electron (-) and electrostatic adsorption force are generated, so that it is more easily attached. The metal seed and the evaporated metal particles 28 coexist at the interface with each other while condensation of the metal particles 28 occurs, so that they are more tightly coupled. Through the formation of the electrostatic adsorption interface 40 between the metal seed pretreatment layer 30 and the film formation 50 , it is possible to manufacture the gas barrier laminate 100 having excellent adhesion. In this process, an oxide thin film may be formed by adding a reactive gas such as oxygen during evaporation in the deposition chamber.

Referring to the enlarged view of the roll adhesion film cross-section 26 for cooling after film formation in FIG. 7 , when a metal such as aluminum (Al) is deposited, after the film formation 50 is completed, the metal film 50 is formed of metal by electrostatic induction. Since it has a charge opposite to that of the seed pretreatment layer 30 , the electrostatic adsorption interface 40 may be continuously maintained, and adhesion at the interface may be maintained. Similarly, even when an inorganic material such as aluminum oxide (AlO _X ) is deposited, it has an opposite charge due to the polarization phenomenon.

The film 12 on which the metal film or the inorganic oxide film has been deposited as described above is wound on the winding roll 15 . Even without a separate antistatic treatment, the film 12 is stably wound, and winding wrinkles can be prevented.

As shown in FIG. 9 through the above process, the vacuum deposition apparatus 10 of the present invention can produce a gas barrier laminate 100 having excellent gas barrier performance and adhesion between the film forming 50 and the film 12. do.

10: vacuum deposition apparatus 11: vacuum chamber
11a, 11b: vacuum pump 11c: film-forming part vacuum chamber
12: film 13: unwind roll
14: cooling roll 15: winding roll
16a, 16b: inlet guide roll 17: in-line plasma treatment machine
18: film forming unit 19: evaporation vessel
20a, 20b, 20c, 20d: exit guide roll
21: auxiliary roll
22a, 22b, 22c, 22d, 22e, 22f, 22g: means of play
23a, 23b: nip roll 24: roll entrance film section for cooling
25: Roll-adhesive film cross-section for cooling 26: Cross-section of roll-adhesive film for cooling after film formation
27: vapor deposition material 28: evaporated metal particles
30: metal seed pretreatment layer 40: electrostatic adsorption interface
50: film formation 100: gas barrier laminate

Claims (9)

The film unwound from the unwinding roll in vacuum is pre-treated in the in-line plasma processing machine, and the pre-treatment layer on the surface of the film drawn out is introduced into the film forming section while pressing with the inlet guide roll, the deposition layer is formed on the film surface in the film forming section, and from the film forming section As a vacuum deposition device for winding the derived deposition film on a winding roll,
The in-line plasma processor includes a sputtering device for sputtering a film with a metal target;
The entrance guide roll includes a charging means woven with an electrifying fiber for charging the pretreatment layer;
The charging means is configured in a band shape surrounding the outer peripheral surface of the entrance guide roll;
The film forming part is located in a separate vacuum chamber and includes a cooling roll for cooling the film by closely adhering the film sent from the entrance guide roll, a container disposed opposite the cooling roll and evaporating the material deposited on the film; A vacuum deposition apparatus comprising: a heating means for heating a vessel; and a material supply unit for supplying a material to be deposited in the vessel.
The vacuum deposition apparatus according to claim 1, wherein when the heating means is an electron beam, a separate reflection electron blocking device is provided.
The vacuum deposition apparatus according to claim 1, wherein the heating means is resistance heat generated inside the source container.
The vacuum deposition apparatus according to claim 1, wherein the charging means rotates in synchronization with the entrance guide roll according to the movement of the film.
The vacuum deposition apparatus according to claim 1, wherein the charging means contains charged particles.
The vacuum deposition apparatus according to claim 1, wherein the charging means is woven in a network structure.
The vacuum deposition apparatus according to claim 1, wherein the in-line plasma treatment machine simultaneously performs plasma treatment on the film surface.
The vacuum deposition apparatus according to claim 1, wherein the entrance guide roll is composed of two or more having the same or different diameters.
The vacuum deposition apparatus according to claim 1, wherein the entrance guide roll is formed in a pair with a nip roll capable of applying a constant pressure to the film.

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