KR100593805B1 - Continuous surface-treating apparatus for film shape polymer and continuous surface-treating method thereof - Google Patents

Abstract

The present invention improves the bonding strength between the film polymer and the metal ion through the pre-treatment process by ion implantation and maintains the smoothness of the film polymer surface and then the metal ion and the metal ion injected with the MO (Metal Organic source) Metal ions injected from the sputter are atomized by microwaves of magnetic for ECR (Electron Cyclotron Resonance) and deposited on the film-like polymer surface, thereby thick metal on the film-like polymer surface without affecting the intrinsic properties of the film-like polymer. A thin film can be formed, and peeling or disconnection of the metal thin film due to bending or folding can be prevented.

Bipolar pulse. polymer. film. Metal thin film.

Description

Continuous surface-treating apparatus for film shape polymer and continuous surface-treating method

1 is a schematic view showing an apparatus for continuously forming a metal thin film in the film polymer according to the present invention.

-Explanation of symbols for the main parts of the drawing-

1 film-like polymer 10 pretreatment chamber

11: feed roller 12: guide roll

13, 35, 55: atmospheric gas supply source 14, 43, 63: high frequency power generator

15, 44, 64: matching boxes 16, 41, 61: antenna

17, 46, 66: grid 18: negative voltage generator

19, 31, 51, 75: rotary pump 20: bracket

21: MFC 30, 50: processing chamber

32, 52: turbo pump 33, 53: roller

34, 54, 76: guide roll 36, 56: bubbler

37, 57: heaters 38, 40, 58, 60: distributor

39, 59: ECR source source 42, 62: ECR magnetic

45, 65: sputter 47, 67: bipolar pulse negative voltage generator

70: withdrawal chamber 71: winding roller

72, 73: auxiliary roller 74: protective film

The present invention relates to an apparatus and method for continuously forming a metal thin film on a film-like polymer, in particular injected into the surface of the film-like polymer (polymer) after the pretreatment by ion implantation with a MO organic material (Metal Organic source) Apparatus and method for continuously forming a metal thin film on a film-like polymer which enables the deposition of metal ions and metal ions injected from a sputter by atomization of the microwaves of the magnetic for ECR (Electron Cyclotron Resonance) .

Conventionally, a method of sputtering ions formed by applying a bias to a metal to a polymer by forming a metal thin film on various types of polymers, and a method of vaporizing and depositing a metal by using a plasma And a method of melting and evaporating a metal has been put into practical use.

In the prior art, the method of depositing a metal on a polymer emits hundreds of degrees of heat due to metal ionization, thus affecting the polymer as a base material, resulting in inferior physical properties due to the change in intrinsic properties of the polymer, and high temperature heat. Deformation and the like have been caused, causing problems in practical use.

In addition, when the thin film is formed, due to the lack of bonding strength between the polymer and the metal ion, deposition is possible only by depositing metal ions to be deposited after depositing other heavy metal ions to improve bonding strength. However, even after such a process, the adhesion of the ionized metal ions is poor, and the polymer and the metal ions are easily peeled off. As the thickness of the deposited metal ions increases, the particle size increases, so that the metal thin film is easily peeled off from the polymer. Problems such as cracking occur in the air.

In addition, in the case of plating by a wet method, the polymer to be plated is limited, and thus problems of environmental pollution such as deterioration of physical properties of the polymer, deformation, and generation of harmful substances occur.

The present invention for solving the problems as described above is easy to chemical vapor deposition at room temperature irrespective of the nature and type of the polymer, the particle size of the ionized metal ion is very small, deposited on the polymer after bending or folding the metal There is no delamination of the thin film, and the adhesion of metal ions by covalent bonding improves the adhesion (adhesive force) to the polymer so that the peeling and cracking of the metal ions deposited on the polymer surface does not occur without forming another heavy metal ion layer. There is this.

In addition, the present invention can suppress the generation of substances harmful to the human body or the environment while maintaining the inherent physical properties of the polymer despite the formation of a metal thin film on the film-like polymer out of the limitation of the wet method that can be deposited for a limited type of polymer The purpose is to make it.

The apparatus according to the present invention for achieving the above object comprises a plurality of chambers partitioned and enclosed with a space for winding the film-like polymer after the ion implantation into the film-like polymer and the formation and treatment of the metal thin film; And a pressure adjusting means consisting of a rotary pump and a turbo pump for adjusting the internal pressure of the chambers to a pressure for ion implantation and formation of a metal thin film, and a feed roller and a surface on which a film-shaped polymer wound in a roll is mounted. And a winding roller having a plurality of rollers for inducing transfer of the film-like polymer and a power source to which the processed film-like polymer is wound, is disposed at the center of each chamber, and maintains tension of the film-like polymer to be transferred. Guide rolls for forming the movement path of the film-like polymer and the movement path of the film-like polymer (1). Accordingly, film-like polymer transfer means installed in each chamber and around each roller, and an atmosphere gas supply source for supplying an atmosphere gas for plasma formation in the pretreatment chamber and the processing chamber, are connected to the atmosphere gas supply source and each chamber. The main gas is supplied from the high frequency power generator through an atmosphere gas supply means equipped with a control means for regulating the amount of gas on the connection line, and a matching box in the pretreatment chamber and the antenna positioned in the processing chamber and spaced apart from the film polymer. High frequency power supply means for supplying the supplied high frequency power to form a plasma, and a grid is installed to be spaced apart from the film-like polymer moving path in the pretreatment chamber to supply a DC pulse negative voltage for focusing ions to the grid Ion injection water with negative voltage generator However, MO source supply means for supplying the MO source of the bubbler vaporized by the heater with the atmosphere gas to the processing chamber, and the metal ions connected to the interior of the processing chamber and generated by the sputtering method A sputter to be injected into the process chamber, an ECR source supply means connected to the inside of the process chamber and supplying an ECR source for replacing the MO source with fine metal ions, a MO source injected together with the atmosphere gas; ECR generating means for substituting the metal ions injected from the sputter with fine metal ions by microwaves generated in the ECR magnetic connected to the ECR source and the high power generator, and the film-like polymer that wraps and transports the rollers in the processing chamber. Spaced apart bipolar grids, the bipolar grids and roller surfaces The conductor is characterized in that it comprises a bipolar pulse voltage of negative supply voltage negative bipolar pulse generator connected to the metal ion deposition means for focusing a metal ion formed by the ECR generating means.

In addition, in the present invention, the atmosphere gas source is preferably configured to be connected in the processing chamber via or pass through a bubbler containing the MO source.

In addition, in the present invention, the distributor for supplying the atmosphere gas including the MO source and the ECR source with respect to the antenna in the processing chamber is arranged in a double interval at a predetermined interval, the rear of the antenna is provided with a magnetic for ECR It is preferable.

In addition, in the present invention, the processing chamber for forming a metal thin film on the surface of the film-like polymer is divided into two, the two processing chambers to form a continuous metal thin film on different sides of one film-like polymer at the same time. It is preferably arranged symmetrically so that it can be.

In the present invention, it is preferable that a valve for opening and closing in accordance with the internal pressure of the chamber is mounted in a path connecting the rotary pump and the turbo pump to the chamber.

In addition, the method according to the present invention is a first step of injecting ions to the surface of the film-like polymer by concentrating ions by applying a DC pulse negative voltage to a grid disposed at a predetermined interval from the moving path of the film-like polymer in a high vacuum plasma state And a second step of substituting the metal ions injected from the MO source and the sputter in the high vacuum plasma state after the ion-implanted film-like polymer is transferred to the fine metal ions by applying high frequency power to the ECR magnetic, and the film-like polymer. A metal ion to form a metal thin film on the surface of the film polymer by applying a bipolar pulse negative voltage to the bipolar grid and a conductor on the surface of the roller on which the film polymer is transported with a certain distance from the movement path. The third step of depositing a protective film on the surface of the film-like polymer formed with the metal thin film It characterized in that it comprises a fourth step of winding on the winding roller.

In the present invention, only the atmosphere gas is injected into the processing chamber while only the ion implantation process is performed in the pretreatment chamber, and the MO source vaporized together with the atmosphere gas is formed in the processing chamber while the metal thin film is formed in the processing chamber. It is preferred to be injected into.

In the present invention, the MO source is preferably one selected from copper, nickel, gold, aluminum, silver, SnO _x , In ₂ O ₂ , ITO.

In the present invention, the atmosphere gas is preferably argon gas.

In the present invention, the ECR source is preferably hydrogen gas.

Hereinafter, the present invention will be described in detail.

Referring to FIG. 1, the apparatus according to the present invention includes a pretreatment chamber 10 in which a pretreatment process of a film polymer 1 is performed by ion implantation, and two processing chambers for depositing metal ions on the surface of the film polymer 1. 30, 50, and a withdrawal chamber 70 for winding the film-like polymer 1, which has been processed in the pretreatment chamber 10 and the processing chambers 30, 50, onto the winding roller 71. . Of course, each of the chambers 10, 30, 50, 70 is kept in a closed state, and has a door that can be opened and closed when no separate processing is performed.

The pretreatment chamber 10, the processing chambers 30, 50, and the extraction chamber 70 are connected to each other, but leave only a minimum space for the film-like polymer 1 to move to prevent plasma scattering. It is blocked by the bracket 20. In addition, rotary pumps 19 and 75 are connected to the pretreatment chamber 10 and the withdrawal chamber 70, respectively, and the rotary pumps 31, 51 and the turbo pump 32 ( 52 is connected, it can be adjusted to a pressure suitable for the ion implantation of the internal pressure of the chamber 10, 30, 50, 70 or the formation of a metal thin film according to the selective driving of each pump.

In particular, a throttle valve is opened or closed automatically or manually between each of the chambers 10, 30, 50, 70 and the rotary and turbo pumps 19, 31, 32, 51, 52, 75. Since the throttle valve is mounted, the internal pressure can be adjusted by selectively opening and closing the throttle valve according to the ion implantation and the formation of the metal thin film formed in each chamber 10, 30, 50, 70.

In the center of the pretreatment chamber 10 among the chambers 10, 30, 50, 70, a feed roller 11 capable of mounting the film-like polymer 1 wound in a roll shape is provided. Located at four corners of the inside and connected to the processing chamber 30, the pre-treatment of the film-like polymer 1 released from the supply roller 11 is exposed to the high vacuum plasma formed in the pretreatment chamber 10 for a predetermined time. Guide pins 12 are provided for inducing the transport and time delay of the film-like polymer 1 so as to move to the processing chamber 30 after finishing the process.

Here, although not shown in the drawing on the feed roller 11, a damper is attached to the film-like polymer 1 wound on the feed roller 11 so as to be unwound at a constant speed with a constant tension.

Preferably, a driving motor that is independent or interlocked with each of the feed rollers 11, the two rollers 33 and 53, and the take-up rollers 71, and each roller 11, 33, 53, and 71 Depending on the tension of the film-like polymer (1) to be transported or the time for the treatment of the film-like polymer (1), the driving motor can be selectively driven so that the film-like polymer (1) can be transported with a constant tension. have. Of course, although not shown in the figure, a sensor that can sense a separate tension is attached to the middle of the film-like polymer (1), according to the tension of the film-like polymer (1) detected by the sensor of the drive motor Rotation can be controlled. Of course, it is preferable that the driving motors mounted on the two rollers 33 and 53 be driven in conjunction with the processing speed of the film-like polymer 1 regardless of the tension of the film-like polymer 1.

The pretreatment chamber 10 is connected to an atmosphere gas supply source 13 for supplying an atmosphere gas such as argon (Ar) gas for plasma formation, and the atmosphere gas supplied from the atmosphere gas supply source 13 is an atmosphere. It is injected into the pretreatment chamber 10 in an amount of 10 to 750 sccm by a Mass Flow Controller (MFC) 21 mounted between the gas source 13 and the pretreatment chamber 10.

In addition, the pretreatment chamber 10 is provided with a high frequency power generator 14, a matching box 15 and an antenna 16, which guides the guide roll 12 located in the pretreatment chamber 10 for plasma formation. It is for supplying high frequency electric power to the antenna 16 disposed away from the transport path of the film-like polymer 1 by a predetermined distance so that ions are formed three-dimensionally around the film-like polymer 1 to be transported.

In addition, a negative voltage generator 18 is connected to the pretreatment chamber 10 to supply a DC pulse negative voltage to the grid 17 disposed up, down, left and right along the transfer path of the film polymer 1. At this time, the grid 17 to which the DC pulse negative voltage is applied moves the path of movement of the film-like polymer 1 for ion implantation on the surface of the film-like polymer 1 carried by the guide roll 12 as shown in the drawing. Wrapping In particular, the ions present in the pretreatment chamber 10 may be focused by a DC pulse negative voltage applied to the grid 17 to be injected on both sides of the film-like polymer 1 so as to be spaced apart from both sides of the film-like polymer 1. Are placed. Of course, each of the chambers 10, 30, 60 maintains an insulation state, and a bias of the anode is applied thereto.

In the central portion of the processing chambers 30 and 50 connected to the pretreatment chamber 10 and arranged symmetrically with each other, rollers 33 and 53 for guiding the transport of the film-like polymer 1 are installed and the surface is The film-like polymer 1 transported by rollers 33 and 53 is completely wrapped around the rollers 33 and 53 so that the film-like polymer 1 Guide rolls 34 and 54 are arranged to guide the metal thin film to be uniformly formed on the surface. In addition, the smooth transfer of the film-like polymer 1 transferred from the pretreatment chamber 10 to the processing chamber 30 or from the processing chamber 30 to the processing chamber 50 and from the processing chamber 50 to the withdrawal chamber 70. Many guide rolls for maintaining the movement path of the film-like polymer (1).

In particular, the processing chamber 30 and the processing chamber 50 have a symmetrical shape to each other so that the metal thin film can be continuously formed on different surfaces of one film-like polymer 1 at the same time. That is, the surface where the two rollers 33 and 53 and the film-form polymer 1 conveyed by this are mutually different.

The processing chambers 30 and 50 are connected with atmospheric gas sources 35 and 55 for supplying an atmosphere gas such as argon gas, which is a bubbler for supplying a metal organic source. It is configured to be connected via (36) (56) or pass through (pass), the inside of the processing chamber 30, 50, where the MO source and the atmosphere gas is injected so that they can be evenly injected into a large space ( 38 and 58 are provided. Of course, it is natural that one side of the bubbler 36, 56 is equipped with a heater 37, 57 for heating and vaporizing the MO source stored in the bubbler 36, 56.

In addition, an ECR source source 39, 59 for supplying an ECR source such as hydrogen is connected to the processing chamber 30, 50, which also discharges the exhaust gas in the processing chamber 30, 50. It is injected through the dispenser 40, 60 installed adjacent to the 38 (58), evenly injected in a wide space to induce active replacement of the MO source.

Although not shown in the figure, a path for transferring the atmosphere gas and the ECR source including the vaporized metal particles to the processing chambers 30 and 50 is a separate Mass Flow Controller for controlling the injection amount of the atmosphere gas and the ECR source. ), The atmosphere gas can be injected in an amount of 10 to 750 sccm and the MO source at a pressure of 1.3 to 3.5 mTorr.

In addition, antennas 41 and 61 to which high frequency power for plasma formation is applied are mounted in the centers of the dividers 38, 40, 58 and 60 into which the MO source and the ECR source are injected, and the divider 38 ( Behind the 40, 58 and 60, there are mounted ECR magnetic 42 and 62 for forming microwaves by magnetic resonance, and the antennas 41 and 61 and the magnetic 42 and 62 for ECR. ) Is connected to a high frequency power generating device 43, 63 and a matching box 44, 64 for supplying high frequency power. Here, the high power supplied to the magnetic 42 for the ECR (62) 62 has a frequency characteristic of 300 to 1500 W and 60 Hz.

The process chambers 30 and 50 are provided with sputters 45 and 65 for supplying metal ions produced by the sputtering method. The metal particles injected from the sputters 45 and 65 are moved to the space in which the magnetic coils 42 and 62 for the ECR are located, and are converted into finer metal particles by microwaves.

In addition, around the rollers 33 and 53 located in the center of the processing chambers 30 and 50, the grids 46 and 66 are spaced at regular intervals so that metal ions are uniformly deposited on the film-like polymer 1 surface. Is used to focus the metal ions present in the processing chambers 30 and 50 in the direction toward the film-like polymer 1 transport path. The bipolar grids 46 and 66 and the roller 33 (53) The conductor surrounding the surface is connected to the bipolar pulse negative voltage generators 47 and 67 for supplying a bipolar pulse negative voltage of -500 to -5 KV, so that the grids 46 and 66 and the rollers are connected. (33) (53) The same potential is formed on the surface so that spark is not formed despite the concentration of metal ions.

In the center of the drawing chamber 70 connected to the processing chamber 50, a winding roller 71 in which the film-like polymer 1 having a metal thin film is finally wound is installed to be linked with a driving motor which is a power source (not shown). . In addition, two auxiliary rollers 72 and 73 are mounted at the front end of the winding roller 71, which is one side of the film-like polymer 1 wound around the winding roller 71 by the guide roll 76 or The protective film 74 for protecting the metal thin films formed on both surfaces is supplied.

Referring to FIG. 1, a process of forming a metal thin film on a film polymer will be described.

First, the film-like polymer 1 mounted on the supply roller 11 of the pretreatment chamber 10 is followed by ion implantation in the pretreatment chamber 10, followed by a plurality of guide rolls 12, 34, 54, 76. After the transfer to the processing chamber 30, 50 to form a metal thin film, the end of the film-like polymer (1) to be wound together with a protective film on the winding roller 71 of the take-out chamber 70 to take out the chamber It is attached (connected) to the winding roller 71 of (70).

At this time, one or two so as to protect the metal thin film formed on one side or both sides of the film-like polymer (1) wound on the winding roller 71 while winding together with the film-like polymer (1) wound on the winding roller (71) The ends of the protective film 74 wound on the two auxiliary rollers 72 and 73 are also mounted on the winding roller 71 of the take-out chamber 70.

Here, as the film-like polymer (1) to be processed, polyethylene terephthalate (PET), polypropylene (PP), high density polyethylene (HDPE), ethylene vinyl acetate (EVA), low density polyethylene (LDPE), linear low density polyethylene (LLDPE) , Acrylonitrile-butadiene copolymer (ABS), polyvinyl chloride (PVC), polycarbonate (PC), polyphenylene sulfide (PPS), (polyethylene naphtharate) PEN, polyether ether catone (PEEK), polyether It may be a mid resin (PEI), polyimide (PI), modified polyphenylene oxide (MPPO), modified polysulfone (MPSU; Modified polysulfone), modified polyether (MPES; Modified polymer), polyacetal (POM), etc. have.

After the mounting of the film-like polymer 1 is completed, the internal pressure of the pretreatment chamber 10 is 10 ⁻³ Torr by driving the rotary pump 19 of the pretreatment chamber 10.

Here, the pretreatment chamber 10, the processing chambers 30, 50 and the withdrawal chamber 70 are connected to each other so that the internal pressures of the respective chambers 10, 30, 50, 70 are not separated and adjusted. Rotary pump 19 of pretreatment chamber 10 and rotary pumps 31 and 51 and turbo pumps 32 and 52 of processing chambers 30 and 50 and rotary pump 75 of take-out chamber 70. May be selectively driven to create a pressure suitable for ion implantation and metal thin film formation.

In particular, a throttle valve is automatically opened and closed by a control unit (not shown) capable of recognizing the internal pressure of each of the chambers 30 and 50 between the turbo pumps 32 and 52 and the processing chambers 30 and 50. A valve is provided so that the internal pressure of each chamber 10, 30, 50, 70 can be automatically adjusted to a pressure suitable for ion implantation or metal thin film formation.

Subsequently, an atmosphere gas such as argon gas is introduced into the pretreatment chamber 10 in an amount of 10 to 750 sccm, and 100 W to be supplied from the high frequency power generator 14 and the matching box 15 for plasma formation. High frequency power of 1 KW is supplied to the antenna 16.

Also in this case, the injection amount of the atmospheric gas supplied to the pretreatment chamber 10 is controlled by an MFC (Mass Flow Controller) 21 located between the atmospheric gas supply source 13 and the pretreatment chamber 10.

The pulse voltage supplied from the negative voltage generator 18 for ion implantation into the film-like polymer 1 is -10 KV, the pulse-off voltage is -5 KV, the high voltage pulse width is 20 Hz, and the pulse frequency is A DC pulse negative voltage of 15 KHz is applied to a grid 17 enclosing the moving path of the film-like polymer 1 up and down.

Therefore, since ion implantation is performed on both sides of the film polymer 1 through the pretreatment process, contaminants and foreign substances present on the surface of the film polymer are removed, and at the same time, a polar group is given to the film polymer surface to give the treatment chamber 30 (50). When the metal thin film is formed in the following process, the bonding force between the film polymer and the metal ion can be improved, and the smoothness of the film polymer surface can be maintained.

The processing chambers 30 and 50 in which the metal thin film is formed in the film-like polymer 1 after the pretreatment process are internally 10 ^-4 Torr by the rotary pumps 31 and 51 and the turbo pumps 32 and 52. Although the pressure is controlled, the internal pressure of the processing chambers 30 and 50 in which the work is substantially performed is copper, aluminum, gold, nickel, silver, SnO _x , In ₂ O ₂ , injected with the atmosphere gas in a vaporized state. It is formed to 1.2 to 2.3 Torr by MO source such as ITO and ECR source such as hydrogen gas.

That is, an MO source (Metal Organic source) accommodated in the bubblers 36 and 56 is vaporized by the heaters 37 and 57 to form a metal thin film on the film-like polymer 1. At the same time, the gas flows into the processing chambers 30 and 50, and at the same time, hydrogen gas serving as an ECR source is also introduced. When the MO source is copper (Cu ₂ ), argon gas is introduced in an amount of 10 to 750 sccm and hydrogen gas is introduced in an amount of 10 to 1,000 sccm, and the MO source is preferably injected at a vapor pressure of 1.3 to 3.5 mTorr. .

Of course, in the initial stage when the metal thin film is not formed, the atmosphere gas sources 35 and 55 are directly connected to the processing chambers 30 and 50 through a bypass path (not shown) without passing through the bubblers 36 and 56. Since the state is maintained, only argon gas flows into the processing chambers 30 and 50, and metal particles do not flow.

Here, two distributors 38, 40, 58, and 60 into which hydrogen gas and argon gas are introduced are installed adjacent to each other in the processing chambers 30 and 50, and are introduced together with argon gas. Metal particles may be more actively substituted with metal ions by hydrogen gas.

The high frequency power supplied from the high frequency power generators 43 and 63 and the matching boxes 44 and 64 while the argon gas and the hydrogen gas are introduced into the processing chambers 30 and 50, namely, the plasma chamber As supplied to 41 and 61, plasma is formed in the processing chambers 30 and 50. In addition, the metal particles may be formed by microwaves generated from the ECR magnetics 42 and 62 supplied with the high frequency power of the high frequency power generators 43 and 63 having the characteristics of 300 to 1,500 W and 60 Hz. Ionized to 10-90 nm particle size.

In addition, the metal injected by the sputters 45 and 65 is converted to a particle size of 10 to 90 nm by microwaves generated from the magnetic 42 for temperature ECR 42. This is to minimize the size of the metal particles deposited on the surface of the film-like polymer having the property of being easily bent or folded because the larger the size of the metal particles increases the probability of cracking.

In a state in which a plasma environment including metal ions is formed in the processing chambers 30 and 50, the bipolar pulses supplied from the bipolar pulse negative voltage generators 47 and 67 are bipolar grids. As applied to the (46) (66), the metal ions diffused in the processing chambers (30) and (50) are concentrated toward the bipolar grids (46) and (66), and the bipolar grids (46) and (66) are wrapped at regular intervals. It is deposited on the surface of the film-like polymer (1).

At this time, only the metal ions injected together with the atmosphere gas may form a metal thin film having a thickness of 1 to 15 μm on the surface of the film-like polymer (1), and the metal ions injected from the sputters (45) 65 may be further added to the film-like polymer. When depositing on the surface, it is possible to form a metal thin film having a thickness of 1 to 15 μm sufficient to form a circuit pattern as well as electromagnetic shielding.

In the present invention, two processing chambers 30 and 50 are formed symmetrically to each other to form a metal thin film on the surface of the film polymer, which is formed on one side of the film polymer surface by one processing chamber. And to form a metal thin film on the other side of the film-like polymer surface by the other processing chamber. Of course, metal ions may be deposited only in one of the two processing chambers 30 and 50 to form a metal thin film on only one side of the film-like polymer 1.

The film-like polymer 1 in which the metal thin film is formed in the processing chambers 30 and 50 is wound around the winding rollers 71 on the guide rolls 34, 54, 76.

At this time, the protective film 74 is wound on the winding roller 71 together with the film-like polymer 1 having the metal thin film formed thereon to protect the metal thin film formed on the surface of the film-like polymer 1.

Here, the protective film 74 is supplied to one side or both sides of the film-like polymer 1 and wound depending on whether the metal thin film is formed.

In this way, the internal pressure of the drawing chamber 70 in which the film-like polymer 1 is wound on the winding roller 71 is controlled by the rotary pump 75. The film-like polymer 1 wound on the winding roller 71 is When withdrawing to the outside, the internal pressure of the withdrawal chamber 70 is adjusted to atmospheric pressure.

Therefore, according to the apparatus and method for continuously forming the metal thin film in the film-like polymer according to the present invention,

1) The present invention is easy to chemical vapor deposition at room temperature irrespective of the characteristics and types of the polymer, the particle size of the ionized metal ion is very small, there is no peeling by the deposition of the polymer, the polymer is deposited by the covalent bond The adhesion of the metal ions is improved to prevent peeling and cracking of the deposited metal ions without forming another heavy metal ion layer.

2) The present invention is harmful to the human body or the environment while maintaining the intrinsic properties of the polymer, regardless of the characteristics and the type of the polymer, despite the formation of a metal thin film on the film-like polymer out of the limitation of the wet method that can be deposited for a limited polymer The generation of substances can be suppressed.

Although the present invention has been described in detail only with respect to the specific embodiments described, it will be apparent to those skilled in the art that various modifications and variations are possible within the spirit of the present invention, and such modifications and modifications belong to the appended claims. .

Claims (10)

A plurality of chambers partitioned and enclosed with a space for winding the film-form polymer after the ion implantation into the film-form polymer and the formation and treatment of the metal thin film; Pressure adjusting means including a rotary pump and a turbo pump for adjusting the internal pressure of the chambers to a pressure for ion implantation and formation of a metal thin film; Each of the winding rollers has a feed roller on which the film-shaped polymer wound in a roll shape is mounted, and a conductor wraps around the surface, and a plurality of rollers for inducing the transport of the film-like polymer, and a power source on which the processed film-like polymer is wound. Disposed in the center of the chamber, a guide roll for maintaining the tension of the conveyed film-like polymer and forming a travel path of the film-like polymer along the path of the film-like polymer 1 Film-like polymer transfer means disposed around the roller; Atmospheric gas supply is connected to the pre-treatment chamber and the atmosphere gas supply source for supplying the atmosphere gas for plasma formation in the processing chamber, the control means for adjusting the amount of gas on the connection line connecting the atmosphere gas supply source and each chamber Way; High frequency power supply means for supplying high frequency power supplied from a high frequency power generator through a matching box to the antenna disposed in the pretreatment chamber and the processing chamber and spaced apart from the film polymer by a predetermined distance; Ion implantation means in which a grid is installed to be spaced apart from the film-like polymer moving path in the pretreatment chamber and a negative voltage generator for supplying a DC pulse negative voltage for focusing ions to the grid; MO source supply means for supplying a MO source of a bubbler vaporized by a heater with the atmosphere gas to the processing chamber; A sputter which is connected to the inside of the processing chamber and injects metal ions generated by the sputtering method into the processing chamber; ECR source supply means connected to the processing chamber and supplying an ECR source for replacing the MO source with fine metal ions; ECR generating means for replacing the metal ions injected from the MO source and the sputter injected with the atmosphere gas with the fine metal ions by the microwave generated from the ECR magnetic connected to the ECR source and the high power generator; And The bipolar grid is arranged to be spaced apart from the film-like polymer to be transported and wrapped around the roller in the processing chamber, and the bipolar pulse negative voltage for focusing the metal ions formed by the ECR generating means on the conductors of the bipolar grid and the roller surface. A metal ion deposition means connected to the supplied bipolar pulse negative voltage generator; Apparatus for continuously forming a metal thin film on the film-like polymer comprising a. The method of claim 1, And the atmosphere gas source is configured to be connected in the processing chamber via or pass through a bubbler in which the MO source is housed. The method of claim 1, Distributors for supplying the atmosphere gas including the MO source and the ECR source around the antenna in the processing chamber are arranged in a double interval at a predetermined interval, and the ECR magnetic is installed behind the antenna. Apparatus for continuously forming a metal thin film on a polymer. The method of claim 1, The processing chamber for forming a metal thin film on the surface of the film-like polymer is divided into two, and the two processing chambers are symmetrically arranged to simultaneously and continuously form the metal thin film on different sides of one film-like polymer. An apparatus for continuously forming a metal thin film on a film-like polymer, characterized in that. The method of claim 1, The path connecting the rotary pump and the turbo pump to the chamber is equipped with a valve for opening and closing in accordance with the internal pressure of the chamber is a device for continuously forming a metal thin film on the film-like polymer. delete delete delete delete delete

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