KR101849030B1 - Electron beam evaporation source and vacuum deposition apparatus - Google Patents

Electron beam evaporation source and vacuum deposition apparatus Download PDF

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KR101849030B1
KR101849030B1 KR1020167014265A KR20167014265A KR101849030B1 KR 101849030 B1 KR101849030 B1 KR 101849030B1 KR 1020167014265 A KR1020167014265 A KR 1020167014265A KR 20167014265 A KR20167014265 A KR 20167014265A KR 101849030 B1 KR101849030 B1 KR 101849030B1
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axis direction
electron beam
magnetic
holding
evaporation material
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KR1020167014265A
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KR20160086857A (en
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이세이 우시로다
타로 야지마
켄이치 이소노
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가부시키가이샤 아루박
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/065—Construction of guns or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel

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  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)

Abstract

Provided is an electron beam evaporation source capable of stably catching reflected electrons scattered widely and a vacuum evaporation apparatus equipped with the evaporation source.
The electron beam evaporation source includes an evaporation material holding section, an electron gun, and a magnetic circuit section. The evaporation material holding portion has a first holding region capable of holding (holding) the first evaporation material. The electron gun is arranged in parallel with the first holding region in the first axis direction, and is configured to emit an electron beam to the first holding region. Wherein the magnetic circuit portion includes a magnetic plate composed of a soft magnetic material and a reflection electron deflecting member capable of deflecting the electron beam reflected electrons reflected from the first evaporation material toward the magnetic plate, And are arranged side by side in the first axis direction with the first holding region interposed therebetween.

Description

TECHNICAL FIELD [0001] The present invention relates to an electron beam evaporation source and a vacuum deposition apparatus,

The present invention relates to an electron beam evaporation source and a vacuum evaporation apparatus having the same.

Vacuum deposition is a method for efficiently forming a thin film and is used in a wide range of fields. An electron beam, resistance heating, induction heating, ion beam, or the like is used as a heating source for evaporating a material (called evaporation material, evaporation material) forming a thin film. Heating by electron beams is applied to many materials such as high melting point metals and oxides, and in the case of heating by electron beams, contamination by evaporation materials and crucibles is small. For this reason, the electron beam heating method is also used when a plurality of evaporation materials are accommodated as one evaporation source and a lamination film composed of such evaporation materials is formed.

On the other hand, it is known that reflected electrons are generated by irradiating the evaporation material with an electron beam. When such reflected electrons reach the substrate, there is a possibility that the temperature of the substrate is raised to cause problems such as film quality. Thus, Reference 1 discloses a box-shaped reflective electronic trap having openings and yoke members arranged on both sides. The reflective electromagnetic traps deflect the reflected electrons, which have entered from the opening, by a magnetic field based on the yoke material, and collide with the upper and lower surfaces to catch them.

Patent Document 1: Japanese Patent No. 5280149

However, the reflection electron traps described in the reference 1 can not trap the reflected electrons deviating from the openings. Further, the influence of the magnetic field, which may be formed around the reflective electromagnetic trap, is not taken into consideration when the magnetic material is contained in the evaporation material accommodated in the evaporation source.

SUMMARY OF THE INVENTION In view of the above, it is an object of the present invention to provide an electron beam evaporation source capable of stably capturing reflected electrons scattered widely and a vacuum deposition apparatus provided with the electron beam evaporation source.

In order to achieve the above object, an electron beam evaporation source according to an aspect of the present invention includes an evaporation material holding section (holding section), an electron gun, and a magnetic circuit section.

The evaporation material holding portion has a first holding region capable of holding (holding) the first evaporation material.

The electron gun is arranged in parallel with the first holding region in the first axis direction, and is configured to emit an electron beam to the first holding region.

Wherein the magnetic circuit portion includes a magnetic plate composed of a soft magnetic material and a reflective electron deflecting member capable of deflecting the electron beam reflected from the first evaporation material toward the magnetic plate, Are arranged side by side in the first axial direction with the region interposed therebetween.

According to the above arrangement, since the reflected electrons are deflected toward the magnetic plate, the reflected electrons can be prevented from reaching the substrate. Therefore, the temperature rise of the substrate by the reflected electrons can be prevented, and deterioration of the film quality can be prevented. In addition, since the magnetic plate has a function as a magnetic shield, it is possible to prevent the interaction between the magnetic material disposed under the magnetic plate and the reflective electron deflecting member. Further, it is possible to prevent the magnetic action of the magnetic circuit portion on the electron beam, and to prevent deformation of the beam spot of the electron beam by the magnetic circuit portion, for example.

The evaporation material holding portion further has a second holding region capable of holding a second evaporation material waiting for deposition,

And the magnetic circuit portion may be disposed opposite to the second holding region in a second axis direction perpendicular to the first axis direction.

By functioning as the magnetic shield, the magnetic plate can prevent the inconvenience that the magnetic material is attracted to the reflecting electron deflecting member and floated, even when the magnetic material is included as the second evaporation material. Therefore, the electron beam evaporation source can continue to operate stably regardless of the physical properties of the second evaporation material.

The electron beam evaporation source may further comprise:

It is also possible to further comprise a hearth deck having an opening for exposing the first holding region and being formed to be generally flat so as to face the evaporating material holding section in a second axial direction perpendicular to the first axial direction .

The hasdec can prevent the first evaporation material from adhering to the evaporation material holding portion during vapor deposition. In addition, since the was deck is entirely flat, it is difficult for the first evaporation material to adhere to the washer deck when the first evaporation material evaporates. In addition, even if the first evaporation material is attached to the washer, the cleaning of the washer can be easily carried out because of the flatness. Therefore, maintenance of the electron beam evaporation source can also be improved.

In this case, the magnetic circuit portion may be disposed between the evaporation material holding portion and the hearth.

Thus, the first evaporation material can be prevented from adhering to the magnetic circuit portion, and the maintenance property of the electron beam evaporation source can be further improved. Further, the magnetic circuit portion can form a magnetic field on a flat solid low heald with few obstacles, so that the reflected electron deflecting member can more reliably deflect the reflected electrons.

Further, the electron beam evaporation source may be provided with a cooling section capable of cooling the washer deck.

Accordingly, when the deflected reflected electrons reach the Haas deck, the energy of the reflected electrons is lost by the cooled Haas deck. Therefore, the Hadseck can efficiently capture the reflected electrons.

Further, the reflective electron deflecting member may include:

A first magnetic surface orthogonal to the second axis direction and having a first polarity,

And a second magnetic surface orthogonal to the second axis direction and having a second polarity different from the first polarity,

The first magnetic surface and the second magnetic surface may be arranged along a first axis direction and a third axis direction orthogonal to the second axis direction.

Thereby, the reflection electron deflecting member is arranged so that a magnetic field which can be expressed by a magnetic force line which is curved toward either one of the first magnetic surface and the second magnetic surface and convex upward in the second axial direction . Thus, reflected electrons scattered upward in the second axis direction of the reflected electron deflecting member can be deflected, so that more reflected electrons can be captured.

More specifically, the reflection electron deflecting member is a reflection electron-

A first magnet having the first magnetic surface formed thereon,

And the second magnet may be provided with the second magnetic surface and the second magnet disposed apart from the first magnet in the third axis direction.

According to another aspect of the present invention, there is provided a vacuum evaporation apparatus including a vacuum chamber, a support mechanism, and an electron beam evaporation source.

The support mechanism is arranged in the vacuum chamber so as to be capable of supporting an evaporation object.

The electron beam evaporation source has an evaporation material holding portion, an electron gun, and a magnetic circuit portion, and is disposed in the vacuum chamber so as to face the support mechanism in the second axial direction.

The evaporation material holding portion has a first holding region capable of holding the first evaporation material.

The electron gun is arranged in parallel with the first holding region in the first axis direction, and is configured to emit an electron beam to the first holding region.

Wherein the magnetic circuit portion includes a magnetic plate composed of a soft magnetic material and a reflective electron deflecting member capable of deflecting the electron beam reflected from the first evaporation material toward the magnetic plate, Are arranged side by side in the first axial direction with the region interposed therebetween.

1 is a schematic view showing a vacuum vapor deposition apparatus according to a first embodiment of the present invention.
Fig. 2 is a perspective view showing an overall configuration of an electron beam evaporation source according to a first embodiment of the present invention. Fig.
3 is a perspective view showing a configuration of a cooling section by removing a washer included in the electron beam evaporation source from the electron beam evaporation source.
FIG. 4 is a perspective view showing a configuration in which a hot deck and a cooling unit included in the electron beam evaporation source are removed from the electron beam evaporation source. FIG.
5 is a schematic plan view of a reflective electron deflecting member of the electron beam evaporation source, wherein A is viewed from the Z-axis direction and B is viewed from the X-axis direction.
6 is a perspective view showing a magnetic flux produced by the reflective electron deflecting member.
7 is a schematic plan view of another example of the configuration of the reflection electron deflecting member of the first embodiment as viewed from the Z-axis direction.
FIG. 8 is a perspective view showing the entire configuration of an electron beam evaporation source according to a comparative example of the first embodiment. FIG.
Fig. 9 is a diagram schematically showing the positions of the substrate and the temperature sensor in the chamber of the vacuum evaporation apparatus in the experimental example of the first embodiment. Fig.
10 is a graph showing the results of Experimental Example 1-1, and shows the results of Example 1. Fig.
11 is a graph showing the results of Experimental Example 1-1, and shows the results of Comparative Example 1. Fig.
12 is a graph showing the results of Experimental Example 1-2.
Fig. 13 is a perspective view showing an overall configuration of an electron beam evaporation source according to a second embodiment of the invention. Fig.
14 is a graph showing the results of Experimental Example 2-1.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

≪ First Embodiment >

[Configuration of Vacuum Deposition Apparatus]

1 is a schematic view showing a vacuum vapor deposition apparatus according to a first embodiment of the present invention. The X-axis direction, the Y-axis direction and the Z-axis direction in the drawing are orthogonal three-axis directions, the X-axis direction is the first axis direction and the front-back direction of the electron beam evaporation source 100 is the Y- And the Z-axis direction of the electron beam evaporation source 100 corresponds to the second axial direction and the vertical direction (vertical direction).

The vacuum vapor deposition apparatus 1 includes a vacuum chamber 11, a support mechanism 12 and an electron beam evaporation source 100 as shown in the figure.

The vacuum chamber 11 is connected to a vacuum pump (not shown) so as to be able to be held in vacuum. The central portion of the top surface of the vacuum chamber 11 is defined as a top portion 11a. A quartz crystal for measuring film thickness (not shown) may be disposed in the portion 11a.

The support mechanism 12 is disposed in the vacuum chamber 11 and is configured to be capable of supporting an object to be deposited such as a substrate W or the like. The supporting mechanism 12 has, for example, a plurality of supporting portions 13 arranged along the main direction of the circle centering on the portion 11a of the vacuum chamber 11 and a driving portion (not shown). Each supporting portion 13 is formed in a substantially circular shape such as a cymbal, for example, and is capable of holding a plurality of substrates W. The support mechanism 12 has, for example, three support portions 13. The driving unit revolves a plurality of supporting portions 13 around the center 11a of the vacuum chamber 11 and rotates the supporting portions 13, for example. As a result, a uniform deposition film can be formed on the plurality of substrates W.

The electron beam evaporation source 100 is disposed at the lower portion of the vacuum chamber 11 in the Z axis direction with respect to the support mechanism 12. [ The electron beam evaporation source 100 is configured to be capable of irradiating the electron beam B to the evaporation material. The vaporized material to which the electron beam B is irradiated can be heated and evaporated and attached to the substrate W to form a vapor deposition film on the substrate W. [

[Configuration of electron beam evaporation source]

2 is a perspective view showing the structure of the electron beam evaporation source 100. Fig. 2 is an overall view. Fig. 3 is a view showing a cooling unit 133 described later. Fig. 4 is a cross- Fig.

The electron beam evaporation source 100 is provided with the evaporation material holding unit 110, the electron gun 120, the hot deck 130, the cooling unit 133, and the magnetic circuit unit 140 do. In the present embodiment, the electron beam evaporation source 100 is configured as an electron beam evaporation source for metal vapor deposition having at least one crucible.

In the electron beam evaporation source 100, for example, the electron gun 120 and the evaporation material holding unit 110 are arranged along the X axis direction. Hereinafter, the side of the electron gun 120 is referred to as the front side in the X axis direction, and the side of the evaporation material holding unit 110 is described as the rear side in the X axis direction.

The electron beam evaporation source 100 has the evaporation material holding portion 110, the magnetic circuit portion 140, and the hot deck 130 arranged along the Z-axis direction. Hereinafter, the side of the evaporation material holding portion 110 is referred to as the lower side in the Z axis direction, and the side of the hose deck 130 is described as the upper side in the Z axis direction.

2 to 4, the evaporation material holding unit 110 is formed of, for example, one or more crucibles formed in a substantially disc shape having a diameter of about 200 mm and formed along the main direction 110a, 110b, 110c, ...). Each of the crucibles 110a, 110b, 110c, ... is formed in a concave shape so as to be capable of accommodating the evaporation material. The evaporation material holding portion 110 has a first holding region 111 and a second holding region 112 as a region for partitioning the plurality of crucibles 110a, 110b, 110c.

The first holding region 111 can hold (hold) the first evaporation material to be deposited, and includes, for example, one crucible 110a for accommodating the first evaporation material. The term " object of evaporation " means that the electron beam B can be irradiated.

The second retention area 112 is configured to be adjacent to the first retention area 111 and capable of holding the second evaporation material waiting for deposition. The term " during evaporation standby " refers to a state in which the electron beam B is not irradiated although it is held by the evaporation material holding unit 110. The second retention region 112 includes, for example, a plurality of crucibles 110b, 110c, ..., each capable of accommodating the evaporation material in the waiting for deposition. Here, the second evaporation material is one evaporation material of the evaporation material. The number of crucibles 110b, 110c,... Is not particularly limited, and may be, for example, about 3 to 20.

The evaporation material holding unit 110 further has a driving mechanism (not shown) for driving the evaporation material holding unit 110 and rotates about a rotation axis along the Z axis direction by a driving mechanism, . Accordingly, the evaporation material holding section 110 can change the crucibles 110a, 110b, 110c, ... included in the first holding region 111 to change the first evaporation material to be vaporized. Further, the evaporation material holding portion 110 is held at the ground potential as shown in Fig.

The electron gun 120 is arranged in parallel with the first holding region 111 in the X-axis direction and configured to be capable of emitting the electron beam B to the first holding region 111. The electron gun 120 includes a filament and an anode, not shown. The electron gun 120 emits the electron beam B as a result of the potential difference with the anode from the filament in which the surface temperature rises as the driving current to which the high voltage bias voltage is applied causes the thermions to emit.

In the electron gun 120, the electron beam deflection member has a deflection magnetic pole 121 and a deflection magnet (not shown), deflecting the electron beam B by, for example, 180 to 270 degrees, 111). The deflection magnet (not shown) may be composed of an electromagnet or a permanent magnet.

As shown in Fig. 2, the hose deck 130 is arranged so as to be opposed to the evaporation material holding portion 110 in the Z-axis direction, and is entirely flat. The hath deck 130 has a flat surface 130a and an opening 131 for exposing the first holding region 111. [ The opening 131 is formed downward in the Z-axis direction from the flat surface 130a in the present embodiment. The hath deck 130 is configured to cover the second retention area 112 to prevent scattering of the first evaporation material to another evaporation material, and to capture reflected electrons, which will be described later. As the material of the hose deck 130, for example, an equivalent metal material can be applied.

The cooling unit 133 is configured to be able to cool the hot deck 130. The cooling unit 133 can lower the energy of the collided reflected electrons and facilitate the capture of the reflected electrons.

3, the cooling section 133 is a water-cooling type cooling mechanism in the present embodiment, and includes a cooling terminal 134 (which is capable of introducing and discharging a liquid cooling medium) And a cooling pipe 135 capable of circulating the cooling medium. The cooling pipe 135 is disposed inside the hot deck 130 to cool the hot deck 130 by circulating the cooling medium. As the cooling medium, for example, water (water) can be applied. The arrangement of the cooling terminal 134 and the cooling pipe 135 is not particularly limited. For example, as shown in Fig. 3, the cooling medium flows out from the rear in the X-axis direction to the front and backward in the X- Outflow). Thus, the whole of the washer deck 130 can be cooled.

3 and 4, the magnetic circuit section 140 is arranged in the X-axis direction with the electron gun 120 and the first holding region 111 interposed therebetween, and in the present embodiment, Axis direction with respect to the Z-axis direction. The magnetic circuit section 140 has a magnetic plate 141 and a reflecting electron deflecting member 142.

The magnetic plate 141 is made of a soft magnetic material and is made of a material including iron in the present embodiment. The magnetic plate 141 covers at least a part of the second holding region 112 and functions as a magnetic shield for shielding the evaporation material holding portion 110 as described later. Although the shape of the magnetic plate 141 is not particularly limited, it may be formed in a substantially rectangular shape, for example, and may have a width along the Y-axis direction of about 200 mm (i.e., the same degree as the diameter of the evaporation material holding portion 110) ). The thickness of the magnetic plate 141 is not particularly limited, but may be about 2 mm, for example.

The reflective electron deflecting member 142 is configured such that the electron beam B can deflect the reflected electrons reflected by the first evaporation material toward the magnetic plate 141. [ The reflecting electron deflecting member 142 is disposed on the magnetic plate 141 in the present embodiment.

5 is a schematic plan view of the reflected electron biasing member 142, wherein A is viewed from the Z-axis direction and B is viewed from the X-axis direction. 6 is a perspective view showing a magnetic flux produced by the reflected electron deflecting member 142. As shown in Fig. In Fig. 5B and Fig. 6, only representative flux is shown for the sake of explanation.

4 and 5, the reflected electron biasing member 142 includes a first magnetic surface 143 orthogonal to the Z-axis direction and having a first polarity, and a second magnetic surface 143 orthogonal to the Z- And a second magnetic surface 144 of a different second polarity. The first polarity is, for example, N pole, and the second polarity is, for example, S pole.

More specifically, the reflective electron deflecting member 142 includes a first magnet 145 on which a first magnetic surface 143 is formed and a second magnetic surface 144 on which the first magnet 145 and the Y- And a second magnet 146 disposed apart from the first magnet. For example, each of the first magnet 145 and the second magnet 146 is composed of two permanent magnets in a substantially rectangular parallelepiped shape in this embodiment. As the permanent magnet, for example, a ferrite magnet, a neodymium magnet, an alnico magnet, or the like can be appropriately applied. 5A, in this embodiment, the first magnet 145 and the second magnet 146 are disposed along the side of the magnetic plate 141 along the X-axis direction.

6A and 6B, the first magnetic surface 143 formed on the first magnet 145 and the second magnetic surface 144 formed on the second magnet 146 are arranged on the Y axis Direction.

5A, the width W1 of the first magnetic surface 143 and the second magnetic surface 144 that are spaced apart in the Y-axis direction is smaller than the width W1 of the evaporation material holding portion 110 Of the first retention area 111 in the Y-axis direction is longer than the length W2 of the first retention area 111 in the Y-axis direction. The width W1 refers to the shortest width along the Y axis direction among the widths spaced along the Y axis direction between the first magnetic surface 143 and the second magnetic surface 144, Is the length of the longest portion of the first retention area 111 along the Y-axis direction.

The width of the first magnetic surface 143 and the second magnetic surface 144 separated in the Y-axis direction may be made constant as they are directed backward in the X-axis direction. That is, the first magnetic surface 143 and the second magnetic surface 144 may extend parallel to each other along the X-axis direction. The first magnetic surface 143 and the second magnetic surface 144 may be disposed to the rear end of the evaporation material holding portion 110 along the X axis direction.

The magnetic field formed by the reflective electron deflecting member 142 is shifted by the magnetic line of force M from the first magnetic surface 143 to the second magnetic surface 144 as shown in Fig. Is expressed. More specifically, the magnetic field of the first magnetic surface 143 is directed upward in the Z-axis direction by the reflective electron deflecting member 142, and between the first magnetic surface 143 and the second magnetic surface 144, Y A magnetic field in the direction substantially parallel to the axial direction and a magnetic field in the second magnetic surface 144 in the downward direction in the Z axis occur. In other words, each magnetic force line M is expressed by a curve that convexes upward in the Z-axis direction on the YZ plane. 6, the reflected electrons Re having negative charges reflected toward the back in the X-axis direction are reflected by the magnetic plate (not shown) by the magnetic field formed by the reflected electron deflecting member 142, 141 to the Lorentz force (F). Thus, the reflected electrons Re are trapped in the hose deck 130 (not shown in Fig. 6).

In the electron beam evaporation source without the magnetic circuit 140, the reflected electrons Re are reflected on the hose deck 130 and the reflected electrons Re are incident on the substrate W arranged in the Z-axis direction There is a concern. When the reflected electrons Re enter the substrate W, the substrate W is heated by the energy of the reflected electrons Re, which may lower the film quality of the deposited film.

Thus, according to the present embodiment, the reflected electrons Re can be deflected by the magnetic circuit unit 140, and can be captured by the Haas deck 130. Accordingly, the temperature rise of the substrate W during deposition can be suppressed, and the film quality of the vapor deposition film can be maintained favorably.

Further, in the case of attempting to capture reflected electrons by a reflecting electron trap of a box-like shape having an opening portion (see Patent Document 1), it is not possible to capture reflected electrons that do not enter the opening portion, The scattered reflected electrons may reach the substrate. In addition, it is necessary to perform cleaning of an evaporation material or the like adhering to the outside or inside of the reflective electronic traps, and the maintenance is laborious.

5B and FIG. 6, the reflection electron deflecting member 142 forms a dome shape (or a dome shape) on the upper surface of the magnetic circuit portion 140 ), It is possible to form a magnetic field even in the Z-axis direction of the electron beam evaporation source 100. [ Accordingly, the reflected electron deflecting member 142 can be deflected by the influence of the reflected electromagnetic field scattered upward in the Z-axis direction. Therefore, the electron gun apparatus 100 can capture reflected electrons scattered over a wider range. In addition, according to the present embodiment, since the magnetic circuit portion 140 is opened upward in the Z-axis direction and the magnetic circuit portion 140 is covered with the heat sink 130, can do.

According to the present embodiment, the width W1 of the first magnetic surface 143 and the second magnetic surface 144 that are spaced apart in the Y-axis direction is smaller than the width W1 of the first retaining region The width W1 is made to be longer than the length W2 along the Y axis direction of the substrate 111, and the width W1 is made constant as it goes toward the rear side in the X axis direction. Thereby, the trajectories of the plurality of reflected electrons can be controlled substantially parallel to the Y-axis direction without converging a plurality of reflected electrons reflected from the surface of the first evaporation material in the Y-axis direction . Therefore, a plurality of reflected electrons are captured in a wide range on the hosdec 130 and efficiently cooled, whereby the energy of the reflected electrons can be efficiently lowered, and the reflection of the reflected electrons can be prevented.

7 is a schematic plan view showing another configuration example of the magnetic circuit unit 140 of the present embodiment as viewed from the Z-axis direction. As shown in the figure, the widths of the first magnetic surface 143 and the second magnetic surface 144 that are separated along the Y-axis direction gradually increase from the X-axis direction backward, for example, ).

Accordingly, with respect to the magnetic line of force formed by the reflective electron deflecting member 142, the magnetic line of force that draws a large curve increases as it is directed backward in the X-axis direction. Therefore, it becomes easy for the reflection electron deflecting member 142 to deflect the reflection electrons scattered upward in the Z-axis direction or reflected electrons scattered in the Y-axis direction (right side) or left side (left side) Can be deflected to a large deflection diameter.

Since the magnetic plate 141 is made of the soft magnetic material, even if the magnetic material is included as the second evaporation material, the magnetic material is attracted magnetically by the reflective electron deflecting member 140, It is possible to prevent defects such as rising. Therefore, the electron beam evaporation source 100 can continue to operate stably regardless of the second evaporation material. In addition, the magnetic plate 141 can prevent the magnetic circuit 140 from acting on the electron beam B in a magnetic manner. Thus, for example, deformation of the beam spot of the electron beam B by the magnetic circuit unit 140 can be prevented.

In addition, since the hot deck 130 is cooled by the cooling unit 133, the energy of the reflected electrons can be efficiently lowered, and the reliability of capturing the reflected electrons can be enhanced.

8 is a perspective view showing an electron beam evaporation source of a comparative example of the present embodiment. The same components as those of the electron beam evaporation source 100 are denoted by the same reference numerals, and a description thereof will be omitted.

The electron beam evaporation source 300 shown in Fig. 8 includes evaporation material holding unit 110 and electron gun 120 having the same configuration as electron beam evaporation source 100, but does not have a magnetic circuit, Is different. The hollow deck 330 has the openings 131 and the cooling portions 133 (not shown in Fig. 8) as in the embodiment, but is not entirely flat and has convex portions 332 I have.

According to the electron beam evaporation source 300 having the above configuration, when the first evaporation material evaporates, there is a possibility that the first evaporation material adheres to the convex portion 332 of the HASDECK 330 depending on the scattering angle. Further, when the first evaporation material is attached to the washer deck 330, it is difficult to remove the adhered material by the presence of screws or the like for fixing the convex portion 332 and the convex portion 332. [

Therefore, according to the present embodiment, the possibility of attaching the first evaporation material to the hose deck 130 can be greatly reduced by constructing the hash deck 130 as a whole flat. In addition, even when the first evaporation material is attached to the washer deck 130, it can be easily cleaned and the maintenance property can be improved.

[Experimental Example]

Subsequently, an experiment was conducted to confirm the operation and effect of the present embodiment by using the electron beam evaporation source 100 according to the present embodiment as the first embodiment and the electron beam evaporation source 300 shown in Fig. 8 as the first comparative example .

(Experimental Example 1-1)

The electron beam evaporation sources 100 and 300 are disposed in the chamber 11 to drive the electron gun 120 and a plurality of temperature sensors are provided on the substrate placed at a predetermined position of the chamber 11, Respectively. A glass substrate was used as the substrate.

9 is a diagram schematically showing a position in which the substrate and the temperature sensor in the chamber 11 are arranged. The temperature sensor T1 is disposed in the chamber 11a of the chamber 11. The distance between the temperature sensor T1 and the first holding region 111 was about 650 mm. The temperature sensor T2 is disposed substantially at the center of one support portion 13. [ The distance between the temperature sensor T2 and the first holding region 111 is about 600 mm and the angle 2 between the temperature sensor T2 and the first holding region 111 in the X axis direction of the straight line connecting the temperature sensor T2 and the first holding region 111 is about 70 °. The temperature sensor T3 is disposed below the support portion 13 in the Z-axis direction. The distance between the temperature sensor T3 and the first retention area 111 is about 600 mm and the angle 3 between the temperature sensor T3 and the first retention area 111 and the X axis direction of the straight line connecting the temperature sensor T3 and the first retention area 111 is about 45 °.

Further, the support mechanism 12 was not driven.

First, the temperature of each temperature sensor T1, T2, T3 when the power of the electron beam was kept constant was examined. The power of the electron beam is a value obtained by multiplying the bias voltage value when the electron beam is generated by the current value by the emitted electron beam. In this example, the bias voltage value is 10 kV, the current value is 300 mA, Respectively. In addition, the pressure in the vacuum chamber 11 was 6.5 × 10 - to 3 Pa, the first evaporation material is molybdenum (Mo) as, each electron-beam evaporation source (100, 300) under these conditions were the results after operation 25 minutes .

Table 1 and Figs. 10 and 11 show the results of Experimental Example 1-1. The following? T indicates the temperature rise amount from the start of operation.

Fig. 10 shows the results of Example 1, and Fig. 11 shows the results of Comparative Example 1. Fig. In any graph, the vertical axis represents the temperature detected by the temperature sensors T1, T2, T3, and the horizontal axis represents time.

Figure 112016051328910-pct00001

As shown in Table 1 and Figs. 10 and 11, the temperatures detected by the temperature sensors T1, T2 and T3 of Example 1 were significantly lower than those of Comparative Example 1. In Example 1 and Comparative Example 1, since the electron beam power and the evaporation material are the same, it can be considered that reflected electrons are similarly generated on the surface of the evaporation material. Thus, in Comparative Example 1, the reflected electrons reach the substrate and the temperature of the substrate rises due to the energy of the reflected electrons. On the other hand, in Embodiment 1, the reflected electrons are captured by the magnetic circuit unit 140, It can be considered that there are few reflected electrons.

(Experimental Example 1-2)

Subsequently, in Experimental Example 1-2, detecting electrodes having different angles to the XY plane were provided on the Haas deck, and current values flowing through the detecting electrodes were detected. The detection electrodes were arranged so that the angles with the XY plane were 20 °, 30 °, 40 °, 50 °, 60 °, 70 °, 80 °, and 90 °, respectively, and they were connected to the ground potential.

In Experimental Example 1-2, the electron beam evaporation source related to Example 1 and Comparative Examples 1 and 2 was placed in the chamber 11 and vapor deposition was performed.

The electron beam evaporation source according to the comparative example 2 has the evaporation material holding unit 110 having the same structure as that of the electron beam evaporation source 100, the electron gun 120 and the hot deck 130 but has no magnetic circuit part.

12 shows the results of Experimental Example 1-2. In the graph of Fig. 12, the ordinate indicates the current value, and the abscissa indicates the angle of each electrode.

As shown in Fig. 12, almost no current could be detected from any of the electrodes in the first embodiment. Thus, it was confirmed that almost all the reflected electrons were captured by the magnetic circuit unit 140. On the other hand, for Comparative Example 2, it was confirmed that a large current was detected at an electrode having a relatively low angle of 20 DEG to 60 DEG, and the reflected electrons scattered in a large amount around this region. Also in Comparative Example 1, although the detected current value was smaller than that in Comparative Example 2, a current value larger than that in Example 1 was detected at angles other than 90 degrees, and it was confirmed that reflected electrons scattered.

From the above Experimental Examples 1-1 to 1-3, it was confirmed that in Embodiment 1, the reflected electrons are captured by the magnetic circuit portion 140, and the arrival of the reflected electrons to the substrate can be suppressed. Thus, according to the first embodiment of the present embodiment, it is possible to easily perform the maintenance by the flat washer 130, to prevent the temperature rise of the substrate, to prevent the film quality Deterioration and the like can be prevented.

≪ Second Embodiment >

[Configuration of electron beam evaporation source]

13 is a perspective view showing a configuration of an electron beam evaporation source according to a second embodiment of the present invention. In the following description, the same components as those of the electron beam evaporation source 100 are denoted by the same reference numerals, and a description thereof will be omitted.

As shown in the figure, the electron beam evaporation source 200 includes the evaporation material holding unit 110 having the same configuration as that of the electron beam evaporation source 100, the electron gun 120, and the hot deck 130, 240 are different from each other. Although not shown, the electron beam evaporation source 200 may be provided with a cooling section 133.

As shown in Fig. 13, the magnetic circuit portion 140 is arranged in the X-axis direction with the electron gun 120 and the first holding region 111 interposed therebetween. The magnetic circuit portion 240 has a magnetic plate 141, a reflecting electron biasing member 242, and a cover 243. The arrangement and configuration of the magnetic plate 141 are the same as those in the first embodiment.

The reflected electron deflecting member 242 is disposed on the hearth 130 in the present embodiment. The reflective electron deflecting member 142 is configured such that the electron beam B can deflect the reflected electrons reflected by the first evaporation material toward the magnetic plate 141. [ The reflected electron deflecting member 242 may include, for example, the first magnet 145 and the second magnet 146 shown in Fig. 4 and the like (not shown in Fig. 13).

The cover 243 covers the reflection electron deflecting member 242 disposed on the hose deck 130. The material of the cover 243 is not particularly limited and is made of, for example, copper. The cover 243 can prevent the first evaporation material scattered on the reflected electron deflecting member 242 from adhering during deposition.

Even with the electron beam evaporation source 200 having such a configuration, Lorentz force can be applied to the reflected electrons by the reflected electron deflecting member 242, and the reflected electrons can be captured from the dust deck 130 and the cover 243.

[Experimental Example]

Subsequently, experiments were conducted to confirm the operation and effect of the electron beam evaporation source 200 according to the present embodiment. The electron beam evaporation source 200 was used as Example 2.

(Experimental Example 2-1)

The same experiment as in Experimental Example 1-1 of the first embodiment was conducted. That is, the electron beam evaporation source 200 is disposed in the chamber 11 to drive the electron gun 120, and temperature sensors T1, T2, and T3 provided on a substrate disposed at a predetermined position of the chamber 11 Rise. The temperature sensors T1, T2, and T3 were arranged in the same manner as in Experimental Example 1-1.

First, the temperature of each temperature sensor T1, T2, T3 when the power of the electron beam was kept constant was examined. Keeping the power of the electron gun to 3 kW and the pressure in the vacuum chamber 11 was 6.5 × 10 - 3 Pa, a first evaporation material is the result after one and a molybdenum (Mo), an electron beam evaporation source driver 25 minutes under these conditions, Respectively.

Table 2 and Fig. 14 show the results of Experimental Example 2-1. Table 2 also shows the results of Comparative Example 1 described above.

As shown in Table 2 and Fig. 14, the temperatures detected by the temperature sensors T1, T2, and T3 in Example 2 were lower than those in Comparative Example 1. Thus, in the second embodiment, it was confirmed that the reflected electrons were captured by the magnetic circuit unit 240 and temperature rise of the substrate could be suppressed.

Figure 112016051328910-pct00002

Although the embodiment of the present invention has been described above, the present invention is not limited thereto, and various modifications are possible based on the technical idea of the present invention.

The evaporation material holding portion is not limited to a structure having a plurality of crucibles. For example, the evaporation material holding portion may have a structure in which a crucible has a ring or a single crucible with a single crucible, And a mechanism for pushing up and dissolving it toward the upward direction.

Further, the evaporation material holding portion is not limited to a configuration for holding a plurality of evaporation materials, and may be configured to hold only one evaporation material. Even in this case, the influence of the magnetic field generated downward by the magnetic plate in the magnetic circuit portion can be suppressed, and the reflected electrons can be stably trapped.

The arrangement of the reflective electron deflecting members is not limited to the above arrangement. For example, rod magnets having N poles and S poles at both ends may be arranged along the Y axis direction. With this configuration, the first magnetic surface is formed at one end of the bar magnet and the second magnetic surface is formed at the other end, so that the reflected electrons can be deflected toward the magnetic plate. By arranging a plurality of such bar magnets along the X-axis direction, a magnetic field can be formed up to the rear of the X-axis direction.

Alternatively, the distance between the first magnet and the second magnet of the reflective electron deflecting member in the Y-axis direction does not need to be substantially constant along the X-axis direction. For example, the width may spread toward the rear in the X- The first magnet and the second magnet may be disposed.

Also, Haas deck is not a mandatory configuration. For example, the electron beam evaporation source does not have a hash deck, and the magnetic plate may have a function of capturing the reflected electrons and preventing scattering of the evaporation material to the evaporation material holding portion.

The cooling section is not limited to a water-cooled type. Alternatively, the electron beam evaporation source may have no cooling portion.

One … Vacuum deposition apparatus
11 ... Vacuum chamber
12 ... Support mechanism
100, 200 ... Electron beam evaporation source
110 ... Evaporation material holding portion
111 ... The first holding region
112 ... The second pawl region
120 ... Electron gun
130 ... Haas Deck
133 ... Cooling section
140, 240 ... Magnetic circuit
141 ... Magnetic plate
142, 242 ... Reflective electron deflecting member
143 ... The first magnetic surface
144 ... The second magnetic surface
145 ... The first magnet
146 ... Second magnet

Claims (8)

A first holding region capable of holding a first evaporation material and a second holding region adjacent to the first holding region and capable of holding a second evaporation material waiting for deposition; ,
An electron gun disposed in parallel with the first holding region in a first axis direction and capable of emitting an electron beam to the first holding region,
A magnetic circuit part comprising a magnetic plate made of a soft magnetic material and a reflective electron deflecting member capable of deflecting the electron beam reflected electrons reflected from the first evaporation material toward the magnetic plate,
Wherein the evaporation material holding portion has an opening that exposes the first holding region and is opposed to the evaporation material holding portion in a second axis direction perpendicular to the first axis direction and is made of a non-
And,
Wherein the first holding region is located between the electron gun and the magnetic plate and is disposed in parallel with the magnetic plate in the first axis direction,
Wherein the magnetic circuit portion is disposed between the second holding region of the evaporation material holding portion and the hearth,
Wherein the reflection electron deflecting member includes a first magnet having a first magnetic surface which is orthogonal to the second axis direction and has a first polarity and a second magnet having a second polarity orthogonal to the second axis direction and different from the first polarity, A second magnet having a two-sided magnetic surface and being disposed apart from the first magnet in a third axis direction orthogonal to the first and second axis directions
Electron beam evaporation source. The method according to claim 1,
Further comprising a cooling section capable of cooling the hearth
Electron beam evaporation source. A vacuum chamber,
A support mechanism disposed in the vacuum chamber and capable of supporting an object to be deposited,
A first holding region capable of holding a first evaporation material and a second holding region adjacent to the first holding region in a first axis direction and capable of holding a second evaporation material waiting for deposition, Wow,
An electron gun disposed in parallel with the first holding region in the first axis direction and capable of emitting an electron beam to the first holding region,
A magnetic circuit portion comprising a magnetic plate made of a soft magnetic material and a reflective electron deflecting member capable of deflecting the electron beam reflected electrons reflected from the first evaporation material toward the magnetic plate;
Wherein the evaporation material holding portion has an opening that exposes the first holding region and is opposed to the evaporation material holding portion in a second axis direction perpendicular to the first axis direction and is made of a non-
And an electron beam evaporation source disposed in the vacuum chamber so as to face the support mechanism in the second axis direction,
And,
Wherein the first holding region is located between the electron gun and the magnetic plate and is disposed in parallel with the magnetic plate in the first axis direction,
Wherein the magnetic circuit portion is disposed between the second holding region of the evaporation material holding portion and the hearth,
Wherein the reflection electron deflecting member includes a first magnet having a first magnetic surface which is orthogonal to the second axis direction and has a first polarity and a second magnet having a second polarity orthogonal to the second axis direction and different from the first polarity, A second magnet having a two-sided magnetic surface and being disposed apart from the first magnet in a third axis direction orthogonal to the first and second axis directions
Vacuum deposition apparatus. delete delete delete delete delete
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