JP2010106289A - Vacuum vapor-deposition apparatus - Google Patents

Vacuum vapor-deposition apparatus Download PDF

Info

Publication number
JP2010106289A
JP2010106289A JP2008276546A JP2008276546A JP2010106289A JP 2010106289 A JP2010106289 A JP 2010106289A JP 2008276546 A JP2008276546 A JP 2008276546A JP 2008276546 A JP2008276546 A JP 2008276546A JP 2010106289 A JP2010106289 A JP 2010106289A
Authority
JP
Japan
Prior art keywords
reflected
electron
electrons
magnetic field
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008276546A
Other languages
Japanese (ja)
Other versions
JP5280149B2 (en
Inventor
Toru Takashima
徹 高島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Jeol Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jeol Ltd filed Critical Jeol Ltd
Priority to JP2008276546A priority Critical patent/JP5280149B2/en
Publication of JP2010106289A publication Critical patent/JP2010106289A/en
Application granted granted Critical
Publication of JP5280149B2 publication Critical patent/JP5280149B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Physical Vapour Deposition (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a reflected-electron trap which has an improved capturing rate for reflected electrons. <P>SOLUTION: This vacuum vapor-deposition apparatus is directed for vaporizing an evaporation material 7 stored in a crucible 8 by irradiating the evaporation material 7 with an electron beam EB emitted from an electron gun 9 to make the vaporized particles deposit on a substrate 4, in the inside of a vacuum chamber 1. The reflected-electron trap 21 which is installed in the vacuum chamber 1 for capturing an electron beam reflected from the evaporation material 7 has a boxy shape with an opening on which the reflected electrons are incident, and includes: a magnetic pole for generating a magnetic field inside the box, which deflects the reflected electrons; and an electron absorber arranged on a face on which the reflected electrons deflected by the magnetic field are incident. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、反射電子トラップを備えた真空蒸着装置に関する。   The present invention relates to a vacuum deposition apparatus provided with a reflected electron trap.

真空蒸着装置は、真空チャンバ内に置かれた蒸発材料を加熱蒸発させ、蒸発粒子を基板に付着させるもので、光学レンズの反射防止膜等、幅広く成膜に使われている。   The vacuum deposition apparatus heats and evaporates an evaporation material placed in a vacuum chamber and attaches evaporated particles to a substrate, and is widely used for film formation such as an antireflection film of an optical lens.

図１は真空蒸着装置の一概略例を示したものである。   FIG. 1 shows a schematic example of a vacuum deposition apparatus.

図中１は真空チャンバで、排気通路２を通じて真空ポンプ３により排気される様に成っている。   In the figure, reference numeral 1 denotes a vacuum chamber which is evacuated by a vacuum pump 3 through an exhaust passage 2.

前記真空チャンバ１の上壁中央には、基板４（４ａ，４ｂ，４ｃ，……）がセットされた基板ホルダ５がホルダ支持軸を介して取り付けられている。尚、図２は、図１のＡ−Ａ断面を示している。   A substrate holder 5 on which a substrate 4 (4a, 4b, 4c,...) Is set is attached to the center of the upper wall of the vacuum chamber 1 via a holder support shaft. FIG. 2 shows a cross section taken along the line AA of FIG.

前記真空チャンバ１の底壁に設けられた基台Ｂ中には、蒸発材料７を収容した坩堝８が設置されている。   In a base B provided on the bottom wall of the vacuum chamber 1, a crucible 8 containing an evaporating material 7 is installed.

又、前記基台Ｂ中には前記坩堝８に隣接して電子銃が設けられており、該電子からの電子ビームが偏向器（図示せず）により、例えば２７０゜偏向され、前記坩堝８に収容された蒸発材料７を衝撃する様に成されている。尚、前記電子銃９と坩堝８の間には、走査用コイル（図示せず）が設けられており、該電子銃から発生し、前記偏向器（図示せず）により２７０゜偏向された電子ビームＥＢが前記蒸発材料７上を走査する様に成されている。   Further, an electron gun is provided in the base B adjacent to the crucible 8, and an electron beam from the electrons is deflected, for example, by 270 ° by a deflector (not shown). The contained evaporating material 7 is impacted. Incidentally, a scanning coil (not shown) is provided between the electron gun 9 and the crucible 8, and an electron generated from the electron gun and deflected 270 ° by the deflector (not shown). A beam EB scans the evaporating material 7.

図中１０は、前記坩堝８からの蒸発粒子の前記基板ホルダ５方向への飛散を遮蔽することが出来るシャッタで、支持棒１１及び回転軸１２を介してモータ等から成る駆動機構１３により回転可能に取り付けられている。   In the figure, reference numeral 10 denotes a shutter capable of blocking the scattering of the evaporated particles from the crucible 8 toward the substrate holder 5 and can be rotated by a drive mechanism 13 including a motor or the like via a support rod 11 and a rotating shaft 12. Is attached.

１４は、前記電子銃９からの電子ビームＥＢが前記蒸発材料７を衝撃することによって発生する反射電子ＲＥＢを捕獲することにより、該反射電子が前記基板４へ到達するのを防ぐための反射電子トラップである。   14 is a reflected electron for preventing the reflected electrons from reaching the substrate 4 by capturing the reflected electrons REB generated when the electron beam EB from the electron gun 9 bombards the evaporation material 7. It is a trap.

該反射電子トラップは、例えば、銅の如き導電性材料を箱形状、或いは平板状に形成したもので（図の場合は、箱形状）ある。詳説すれば、該反射電子トラップは、断面がＬ字状で該断面に垂直な方向の長さが反射電子を十分に捕獲出来る程度の長さを有する導電性材料を、反射電子が入射する方向に開口部が来る様に配置して成されている。或いは、断面がコの字状で該断面に垂直な方向の長さが反射電子を十分に捕獲出来る程度の長さを有する導電性材料を、反射電子が入射する方向に開口部が来る様に配置して成されている。そして、該反射電子トラップはアース電位にある前記真空チャンバ１に電気的に繋がれ、反射電子の軌道上に配置されている。   The reflected electron trap is, for example, a conductive material such as copper formed in a box shape or a flat plate shape (in the case of the figure, a box shape). More specifically, the backscattered electron trap is formed of a conductive material having an L-shaped cross section and a length in a direction perpendicular to the cross section that can sufficiently capture the backscattered electrons. It is arranged and arranged so that the opening comes. Alternatively, a conductive material having a U-shaped cross section and a length that is sufficient to capture the reflected electrons in a direction perpendicular to the cross section is formed so that the opening comes in the direction in which the reflected electrons are incident. Arranged and made. The backscattered electron trap is electrically connected to the vacuum chamber 1 at the ground potential, and is disposed on the backscattered electron trajectory.

この様な構成の真空蒸着装置において基板上に成膜を行う場合、先ず、前記真空チャンバ１内を真空ポンプ３により真空排気する。   In the case of forming a film on a substrate in the vacuum vapor deposition apparatus having such a configuration, first, the vacuum chamber 1 is evacuated by a vacuum pump 3.

該真空チャンバ内が所定の真空度に達したら、前記電子銃９を作動させる。この時、既に、前記シャッタ駆動機構１３の作動により該シャッタは前記坩堝８と基板４との間、即ち、遮蔽位置に来ている。   When the inside of the vacuum chamber reaches a predetermined degree of vacuum, the electron gun 9 is operated. At this time, the shutter is already in the shielding position between the crucible 8 and the substrate 4 by the operation of the shutter driving mechanism 13.

前記電子銃９の作動により、該電子銃からの電子ビームＥＢは偏向器（図示せず）により２７０゜偏向され、前記坩堝８に収容されている蒸発材料７に当たる。そして、走査用コイル（図示せず）の働きにより、前記電子ビームＥＢは該蒸発材料７上を走査する。   By the operation of the electron gun 9, the electron beam EB from the electron gun is deflected 270 ° by a deflector (not shown) and strikes the evaporation material 7 accommodated in the crucible 8. The electron beam EB scans the evaporation material 7 by the action of a scanning coil (not shown).

この電子ビームの衝撃により、前記蒸発材料７は加熱され、やがて蒸発を始める。   Due to the impact of this electron beam, the evaporating material 7 is heated and eventually evaporates.

この蒸発が安定したら、前記シャッタ駆動機構１３の作動により、前記シャッタ１０は坩堝８と基板４を結ぶライン上から大きく外れた位置に回転移動する。   When the evaporation is stabilized, the shutter 10 is rotated and moved to a position greatly deviated from the line connecting the crucible 8 and the substrate 4 by the operation of the shutter driving mechanism 13.

該移動により、前記坩堝８からの蒸発粒子は前記基板４に到達し、これらの表面に薄膜状に付着する。   By this movement, the evaporated particles from the crucible 8 reach the substrate 4 and adhere to these surfaces in the form of a thin film.

この様な基板への成膜の際、前記蒸発材料７への電子ビーム衝撃により、電子ビームの一部が該蒸発材料の表面で反射する。もし、この様な反射電子が前記基板４に達したり、前記真空チャンバ１の内壁に達すると、該基板やチャンバ内壁が損傷する恐れがある。又、前記基板４が樹脂製の場合には、反射電子が当たることにより蒸発粒子の密着性が低下したり、膜質の低下（例えば、反射防止性の低下の如き光学的損失）が発生する。   During film formation on such a substrate, a part of the electron beam is reflected by the surface of the evaporation material due to the electron beam impact on the evaporation material 7. If such reflected electrons reach the substrate 4 or the inner wall of the vacuum chamber 1, the substrate or the inner wall of the chamber may be damaged. Further, when the substrate 4 is made of resin, when the reflected electrons hit, the adhesion of the evaporated particles is lowered, and the film quality is deteriorated (for example, optical loss such as a decrease in the antireflection property).

そこで、反射電子の軌道上に前記反射電子トラップ１４が設けられており、前記反射電子は該反射トラップに捕獲され、該反射電子トラップに溜まった電荷はアースに流れる。   Therefore, the reflected electron trap 14 is provided on the orbit of the reflected electrons, the reflected electrons are captured by the reflected trap, and the electric charge accumulated in the reflected electron trap flows to the ground.

特開昭６３− ５０４６１号公報JP-A 63-50461 特開平 ３− ７９７５８号公報JP-A-3-79758 特開平 ６− ９３４３１号公報JP-A-6-93431 特開平 ８−２６０１４４号公報JP-A-8-260144 特開２００３−１９３２２１号公報JP 2003-193221 A

さて、前記反射電子トラップ１４の内面に反射電子が衝突した時に、該衝突面に捕獲されずに跳ね返るものがある。該跳ね返った反射電子の内、該反射電子トラップ外に出て行き、前記真空チャンバ内壁や基板４に達するものが少なくない。   Now, when reflected electrons collide with the inner surface of the reflected electron trap 14, there are those that rebound without being captured by the collision surface. Of the reflected electrons that have bounced, there are many that go out of the reflected electron trap and reach the inner wall of the vacuum chamber or the substrate 4.

本発明は、この様な問題を解決する新規な真空蒸着装置を提供することを目的とする。   An object of this invention is to provide the novel vacuum evaporation apparatus which solves such a problem.

本発明の真空蒸着装置は、真空チャンバ内において、坩堝内に収容された蒸発材料に電子ビームを照射し、該照射により蒸発した粒子を被膜部材に付着させる様に成し、前記真空チャンバ内に、前記蒸発材料で反射した電子ビームを捕獲するための反射電子トラップを設けた真空蒸着装置において、前記反射電子トラップは、反射電子が入射する開口部を有する箱状の形状を成しており、反射電子を偏向させる磁界をその箱の内部に発生させるための磁極と、磁界により偏向された反射電子が入射する面に配置される電子吸収体とを有することを特徴とする。   The vacuum deposition apparatus of the present invention is configured to irradiate an electron beam onto an evaporation material accommodated in a crucible in a vacuum chamber, and to attach particles evaporated by the irradiation to a coating member. In the vacuum vapor deposition apparatus provided with a reflected electron trap for capturing the electron beam reflected by the evaporation material, the reflected electron trap has a box shape having an opening through which reflected electrons are incident. It has a magnetic pole for generating a magnetic field for deflecting reflected electrons inside the box, and an electron absorber disposed on a surface on which reflected electrons deflected by the magnetic field are incident.

本発明では、反射電子トラップは、反射電子が入射する開口部を有する箱状の形状を成しており、反射電子を偏向させる磁界をその箱の内部に発生させるための磁極と、磁界により偏向された反射電子が入射する面に配置される電子吸収体で成しているので、反射電子トラップの開口部を通って最初に衝突した内面に捕獲されずに跳ね返るものがあっても、該跳ね返った反射電子は同じ反射電子トラップの別の内面に衝突して捕獲される。   In the present invention, the backscattered electron trap has a box shape having an opening through which the backscattered electrons are incident. The backscattered electron trap is deflected by a magnetic pole for generating a magnetic field for deflecting the backscattered electrons inside the box and the magnetic field. Therefore, even if there is something that bounces without being captured by the inner surface that first collided through the opening of the reflected electron trap, the bounced back The reflected electrons collide with another inner surface of the same reflected electron trap and are captured.

以下、図面を参照して本発明の実施の形態を詳細に説明する。   Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

図３は本発明の真空蒸着装置の一概略例を示したものである。図中、図１及び図２で使用した記号と同一記号の付されたものは同一構成要素を示す。   FIG. 3 shows a schematic example of the vacuum deposition apparatus of the present invention. In the figure, the same reference numerals as those used in FIGS. 1 and 2 denote the same components.

図３に示す真空蒸着装置が前記図１に示す真空蒸着装置と異なる所は、主に、反射電子トラップ２１の構造である。   The vacuum vapor deposition apparatus shown in FIG. 3 differs from the vacuum vapor deposition apparatus shown in FIG. 1 mainly in the structure of the reflected electron trap 21.

図４は該反射電子トラップの詳細を示すもので、全体としては図１に示す反射電子トラップの様に箱形状を成しており、上面と下面はそれぞれ非磁性材料で作製された上面板２５と下面板２６で成され、両側面はそれぞれ磁性材料で作製されたヨーク板２７と２８で成され、底面は非磁性材料で作製された底面板２９で成されている。   FIG. 4 shows the details of the reflected electron trap, which is formed in a box shape like the reflected electron trap shown in FIG. 1 as a whole, and an upper surface plate 25 made of a nonmagnetic material on the upper and lower surfaces. The bottom plate 26 is composed of yoke plates 27 and 28 made of a magnetic material, and the bottom surface is made of a bottom plate 29 made of a nonmagnetic material.

又、前記底面板２９の裏側で前記下面板２６上には、磁性材料で作製されたヨーク板と密着した永久磁石３２が取り付けられている。   A permanent magnet 32 that is in close contact with a yoke plate made of a magnetic material is attached to the bottom plate 26 on the back side of the bottom plate 29.

尚、この様な構造の反射電子トラップ２１を基台B上に設置する場合、開口部が坩堝８側に向く様に、且つ、電子銃９の偏向磁場の影響を受けない距離を取る様にする。   When the reflection electron trap 21 having such a structure is installed on the base B, the opening is directed to the crucible 8 side, and the distance is not affected by the deflection magnetic field of the electron gun 9. To do.

この様な構成の真空蒸着装置において基板上に成膜を行う場合、先ず、前記真空チャンバ１内を真空ポンプ３により真空排気する。   In the case of forming a film on a substrate in the vacuum vapor deposition apparatus having such a configuration, first, the vacuum chamber 1 is evacuated by a vacuum pump 3.

該真空チャンバ内が所定の真空度に達したら、前記電子銃９を作動させる。この時、既に、前記シャッタ駆動機構１３の作動により該シャッタは前記坩堝８と基板４との間、即ち、遮蔽位置に来ている。   When the inside of the vacuum chamber reaches a predetermined degree of vacuum, the electron gun 9 is operated. At this time, the shutter is already in the shielding position between the crucible 8 and the substrate 4 by the operation of the shutter driving mechanism 13.

前記電子銃９の作動により、該電子銃からの電子ビームＥＢは偏向器（図示せず）により２７０゜偏向され、前記坩堝８に収容されている蒸発材料７に当たる。そして、走査用コイル（図示せず）の働きにより、前記電子ビームＥＢは該蒸発材料７上を走査する。   By the operation of the electron gun 9, the electron beam EB from the electron gun is deflected 270 ° by a deflector (not shown) and strikes the evaporation material 7 accommodated in the crucible 8. The electron beam EB scans the evaporation material 7 by the action of a scanning coil (not shown).

この電子ビームの衝撃により、前記蒸発材料７は加熱され、やがて蒸発を始める。   Due to the impact of this electron beam, the evaporating material 7 is heated and eventually evaporates.

この蒸発が安定したら、前記シャッタ駆動機構１３の作動により、前記シャッタ１０は坩堝８と基板４を結ぶライン上から大きく外れた位置に回転移動する。   When the evaporation is stabilized, the shutter 10 is rotated and moved to a position greatly deviated from the line connecting the crucible 8 and the substrate 4 by the operation of the shutter driving mechanism 13.

該移動により、前記坩堝８からの蒸発粒子は前記基板４に到達し、これらの表面に薄膜状に付着する。   By this movement, the evaporated particles from the crucible 8 reach the substrate 4 and adhere to these surfaces in the form of a thin film.

この様な基板への成膜の際、前記蒸発材料７への電子ビーム衝撃により、電子ビームの一部が該蒸発材料の表面で反射する。   During film formation on such a substrate, a part of the electron beam is reflected by the surface of the evaporation material due to the electron beam impact on the evaporation material 7.

該反射電子は、その軌道上に配置された反射電子トラップ２１の開口部に入射する。   The reflected electrons enter the opening of the reflected electron trap 21 disposed on the orbit.

この時、前記永久磁石３２からの磁束により前記ヨーク板２７と２８の間には、該ヨーク板２７をN極、２８をS極とする平行磁界が形成されている。
従って、前記反射電子トラップ２１の開口部を通過した反射電子は、フレミングの左手の法則に基づき、前記平行磁界によって前記下面板２６側に偏向され、該下面板に衝突する。 At this time, a parallel magnetic field is formed between the yoke plates 27 and 28 by the magnetic flux from the permanent magnet 32, with the yoke plate 27 as the N pole and 28 as the S pole.
Therefore, the reflected electrons that have passed through the opening of the reflected electron trap 21 are deflected toward the lower surface plate 26 by the parallel magnetic field based on Fleming's left-hand rule, and collide with the lower surface plate.

この際、該衝突面に捕獲されずに跳ね返った反射電子は、フレミングの左手の法則に基づき、前記平行磁界によって、今度は、前記底面板２９側に偏向され、該底面板に衝突する。   At this time, the reflected electrons bounced without being captured by the collision surface are deflected toward the bottom plate 29 by the parallel magnetic field based on Fleming's left-hand rule, and collide with the bottom plate.

殆どの反射電子は、該二回目の衝突によりエネルギーを消失し、該衝突面に捕獲されてしまう。   Most of the reflected electrons lose energy by the second collision and are captured by the collision surface.

尚、該二回目の衝突によっても該衝突面に捕獲されずに跳ね返った反射電子があっても、その電子は、フレミングの左手の法則に基づき、前記平行磁界によって、今度は、前記上面板２５側に偏向され、該上面板に衝突し、著しくエネルギーを消失して、該衝突面に捕獲されてしまう。   Even if there is a reflected electron that is bounced back without being captured by the collision surface due to the second collision, the electron is now reflected by the parallel magnetic field based on Fleming's left-hand rule. Is deflected to the side, collides with the upper surface plate, loses energy remarkably, and is captured by the collision surface.

尚、前記永久磁石３２のＮ極の位置とＳ極の位置が逆になる様に該永久磁石を前記ヨーク板２７と２８に密着させ、該ヨーク板２８をＳ極、２７をＮ極とする平行磁界が形成した場合には、前記反射電子トラップ２１の開口部を通過した反射電子は、フレミングの左手の法則に基づき、前記平行磁界によって前記上面板２５側に偏向され、該上面板に衝突する。この際、該衝突面に捕獲されずに跳ね返った反射電子は、フレミングの左手の法則に基づき、前記平行磁界によって、今度は、前記底面板２９側に偏向され、該底面板に衝突する。該二回目の衝突によっても該衝突面に捕獲されずに跳ね返った反射電子があっても、その電子は、フレミングの左手の法則に基づき、前記平行磁界によって、今度は、前記下面板２６側に偏向され、該下面板に衝突し、著しくエネルギーを消失して、該衝突面に捕獲されてしまう。   The permanent magnet 32 is in close contact with the yoke plates 27 and 28 so that the positions of the N pole and the S pole of the permanent magnet 32 are reversed, and the yoke plate 28 is the S pole and 27 is the N pole. When a parallel magnetic field is formed, the reflected electrons that have passed through the opening of the reflected electron trap 21 are deflected toward the upper surface plate 25 by the parallel magnetic field based on Fleming's left-hand rule, and collide with the upper surface plate. To do. At this time, the reflected electrons bounced without being captured by the collision surface are deflected toward the bottom plate 29 by the parallel magnetic field based on Fleming's left-hand rule, and collide with the bottom plate. Even if there is a reflected electron that is bounced back without being captured by the collision surface due to the second collision, the electron is now moved toward the lower surface plate 26 by the parallel magnetic field based on Fleming's left-hand rule. It is deflected, collides with the lower surface plate, loses energy remarkably, and is captured by the collision surface.

又、前記反射電子トラップ２１の上面と下面をヨーク板で成し、両側面を非磁性の板で成し、上面を成すヨーク板がＳ極、下面を成すヨーク板がＮ極に成る平行磁界を形成した場合には、前記反射電子トラップ２１の開口部を通過した反射電子は、フレミングの左手の法則に基づき、前記平行磁界によって前記左側面方向に偏向され、該左側面板に衝突する。この際、該衝突面に捕獲されずに跳ね返った反射電子は、フレミングの左手の法則に基づき、前記平行磁界によって、今度は、前記底面板２９側に偏向され、該底面板に衝突する。該二回目の衝突によっても該衝突面に捕獲されずに跳ね返った反射電子があっても、その電子は、フレミングの左手の法則に基づき、前記平行磁界によって、今度は、前記右側面方向に偏向され、該右側面板に衝突し、著しくエネルギーを消失して、該衝突面に捕獲されてしまう。   A parallel magnetic field in which the upper and lower surfaces of the reflected electron trap 21 are yoke plates, both side surfaces are non-magnetic plates, the yoke plate forming the upper surface is the S pole, and the yoke plate forming the lower surface is the N pole. Is formed, the reflected electrons that have passed through the opening of the reflected electron trap 21 are deflected in the left side direction by the parallel magnetic field based on Fleming's left-hand rule and collide with the left side plate. At this time, the reflected electrons bounced without being captured by the collision surface are deflected toward the bottom plate 29 by the parallel magnetic field based on Fleming's left-hand rule, and collide with the bottom plate. Even if there are reflected electrons bounced back without being captured by the collision surface due to the second collision, the electrons are now deflected toward the right side surface by the parallel magnetic field based on Fleming's left-hand rule. It collides with the right side plate and loses energy remarkably and is captured by the collision surface.

更に、前記反射電子トラップ２１の上面と下面をヨーク板で成し、両側面を非磁性の板で成し、上面を成すヨーク板がＮ極、下面を成すヨーク板がＳ極に成る平行磁界を形成した場合には、前記反射電子トラップ２１の開口部を通過した反射電子は、フレミングの左手の法則に基づき、前記平行磁界によって前記右側面方向に偏向され、該右側面板に衝突する。この際、該衝突面に捕獲されずに跳ね返った反射電子は、フレミングの左手の法則に基づき、前記平行磁界によって、今度は、前記底面板２９側に偏向され、該底面板に衝突する。該二回目の衝突によっても該衝突面に捕獲されずに跳ね返った反射電子があっても、その電子は、フレミングの左手の法則に基づき、前記平行磁界によって、今度は、前記左側面方向に偏向され、該左側面板に衝突し、著しくエネルギーを消失して、該衝突面に捕獲されてしまう。   Further, a parallel magnetic field in which the upper and lower surfaces of the backscattered electron trap 21 are formed of yoke plates, both side surfaces are formed of nonmagnetic plates, the yoke plate forming the upper surface is an N pole, and the yoke plate forming the lower surface is an S pole. Is formed, the reflected electrons that have passed through the opening of the reflected electron trap 21 are deflected toward the right side by the parallel magnetic field based on Fleming's left-hand rule, and collide with the right side plate. At this time, the reflected electrons bounced without being captured by the collision surface are deflected toward the bottom plate 29 by the parallel magnetic field based on Fleming's left-hand rule, and collide with the bottom plate. Even if there are reflected electrons bounced back without being captured by the collision surface due to the second collision, the electrons are now deflected toward the left side surface by the parallel magnetic field based on Fleming's left-hand rule. It collides with the left side plate and loses energy remarkably and is captured by the collision surface.

尚、前記反射電子トラップ２１を黒鉛（炭素）等の原子番号の小さい金属で成したり、或いは、この様な原子番号の小さい金属で該反射電子トラップの表面を覆う様にすれば、反射電子が衝突しても電子の後方散乱が起き難く、反射電子捕獲率向上をより確実なものに出来る。   Incidentally, if the reflected electron trap 21 is made of a metal having a small atomic number such as graphite (carbon) or the surface of the reflected electron trap is covered with such a metal having a small atomic number, the reflected electrons are reflected. Electron backscattering is unlikely to occur even if it collides, and the reflected electron capture rate can be improved more reliably.

又、該反射電子の衝突確率を高めて多重散乱を増やすために、前記反射電子トラップ２１の内壁面を凹凸のある構造にしても良い。   Further, in order to increase the collision probability of the reflected electrons and increase the multiple scattering, the inner wall surface of the reflected electron trap 21 may be formed with an uneven structure.

真空蒸着装置の一概略例を示している。1 shows a schematic example of a vacuum deposition apparatus. 図１のＡ−Ａ断面を示す一概略例を示す。The schematic example which shows the AA cross section of FIG. 1 is shown. 本発明の真空蒸着装置の一概略例を示している。1 shows a schematic example of a vacuum evaporation apparatus according to the present invention. 図３で示されている反射電子トラップの一詳細例を示している。FIG. 4 shows a detailed example of the reflected electron trap shown in FIG.

符号の説明Explanation of symbols

１…真空チャンバ
２…排気通路
３…真空ポンプ
４（４ａ，４ｂ，４ｃ，４ｄ，…）…基板
５…基板ホルダ
６…ホルダ支持軸
７…蒸発材料
８…坩堝
９…電子銃
１０…シャッタ
１１…支持棒
１２…回転軸
１３…シャッタ駆動機構
１４…反射電子トラップ
２１…反射電子減衰器
２５…上面板
２６…下面板
２７…ヨーク板
２８…ヨーク板
２９…底面板
３０…永久磁石 DESCRIPTION OF SYMBOLS 1 ... Vacuum chamber 2 ... Exhaust passage 3 ... Vacuum pump 4 (4a, 4b, 4c, 4d, ...) ... Substrate 5 ... Substrate holder 6 ... Holder support shaft 7 ... Evaporation material 8 ... Crucible 9 ... Electron gun 10 ... Shutter 11 DESCRIPTION OF SYMBOLS ... Support rod 12 ... Rotating shaft 13 ... Shutter drive mechanism 14 ... Reflected electron trap 21 ... Reflected electron attenuator 25 ... Top plate 26 ... Bottom plate 27 ... Yoke plate 28 ... Yoke plate 29 ... Bottom plate 30 ... Permanent magnet

Claims (3)

真空チャンバ内において、坩堝内に収容された蒸発材料に電子ビームを照射し、該照射により蒸発した粒子を被膜部材に付着させる様に成し、前記真空チャンバ内に、前記蒸発材料で反射した電子ビームを捕獲するための反射電子トラップを設けた真空蒸着装置において、前記反射電子トラップは、反射電子が入射する開口部を有する箱状の形状を成しており、反射電子を偏向させる磁界をその箱の内部に発生させるための磁極と、磁界により偏向された反射電子が入射する面に配置される電子吸収体とを有することを特徴とする真空蒸着装置。   In the vacuum chamber, an electron beam is irradiated to the evaporation material accommodated in the crucible, and particles evaporated by the irradiation are attached to the coating member, and the electrons reflected by the evaporation material in the vacuum chamber. In a vacuum evaporation apparatus provided with a backscattered electron trap for capturing a beam, the backscattered electron trap has a box shape having an opening through which the backscattered electrons enter, and a magnetic field that deflects backscattered electrons is applied to the backscattered electron trap. A vacuum deposition apparatus comprising: a magnetic pole for generating inside a box; and an electron absorber disposed on a surface on which reflected electrons deflected by the magnetic field are incident. 前記磁極が箱の両側面を形成していることを特徴とする請求項１記載の真空蒸着装置。   2. The vacuum evaporation apparatus according to claim 1, wherein the magnetic poles form both side surfaces of the box. 前記電子吸収体で反射した反射電子が入射する面にも電子吸収体を配置したことを特徴とする請求項１又は２記載の真空蒸着装置。   The vacuum deposition apparatus according to claim 1 or 2, wherein an electron absorber is also disposed on a surface on which reflected electrons reflected by the electron absorber are incident.
JP2008276546A 2008-10-28 2008-10-28 Vacuum deposition equipment Active JP5280149B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008276546A JP5280149B2 (en) 2008-10-28 2008-10-28 Vacuum deposition equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008276546A JP5280149B2 (en) 2008-10-28 2008-10-28 Vacuum deposition equipment

Publications (2)

Publication Number Publication Date
JP2010106289A true JP2010106289A (en) 2010-05-13
JP5280149B2 JP5280149B2 (en) 2013-09-04

Family

ID=42296029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008276546A Active JP5280149B2 (en) 2008-10-28 2008-10-28 Vacuum deposition equipment

Country Status (1)

Country Link
JP (1) JP5280149B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011074415A (en) * 2009-09-29 2011-04-14 Toppan Printing Co Ltd Electron absorber, and electron beam heating type vapor deposition apparatus using the same
CN102703867A (en) * 2012-01-13 2012-10-03 东莞宏威数码机械有限公司 Electron bombardment coating machine
JP2015007269A (en) * 2013-06-25 2015-01-15 日本電子株式会社 Electron gun device for electron beam vapor deposition
EP3366804A1 (en) 2017-02-22 2018-08-29 Satisloh AG Box coating apparatus for vacuum coating of substrates, in particular spectacle lenses
KR20180098157A (en) * 2017-02-24 2018-09-03 자티슬로 아게 Box coating apparatus for vacuum coating of substrates, in particular spectacle lenses, and heating device for it
CN116598861A (en) * 2023-07-13 2023-08-15 西安交通大学 Structure, insulating material and method for inhibiting metal particles

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202344865A (en) 2022-02-01 2023-11-16 日商三菱瓦斯化學股份有限公司 Headmount display member and optical lens using same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5298631A (en) * 1976-02-16 1977-08-18 Hitachi Ltd Voporrdepositing device by heating using electronic beam
JPS6280264A (en) * 1985-10-04 1987-04-13 Ishikawajima Harima Heavy Ind Co Ltd Ion plating device
JPH04236773A (en) * 1991-01-14 1992-08-25 Furukawa Electric Co Ltd:The Electron beam-heated vacuum deposition device
JPH05156428A (en) * 1991-11-29 1993-06-22 Anelva Corp Vacuum vapor deposition device
JPH05174772A (en) * 1991-12-26 1993-07-13 Hitachi Ltd Neutral vapor generating device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5298631A (en) * 1976-02-16 1977-08-18 Hitachi Ltd Voporrdepositing device by heating using electronic beam
JPS6280264A (en) * 1985-10-04 1987-04-13 Ishikawajima Harima Heavy Ind Co Ltd Ion plating device
JPH04236773A (en) * 1991-01-14 1992-08-25 Furukawa Electric Co Ltd:The Electron beam-heated vacuum deposition device
JPH05156428A (en) * 1991-11-29 1993-06-22 Anelva Corp Vacuum vapor deposition device
JPH05174772A (en) * 1991-12-26 1993-07-13 Hitachi Ltd Neutral vapor generating device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011074415A (en) * 2009-09-29 2011-04-14 Toppan Printing Co Ltd Electron absorber, and electron beam heating type vapor deposition apparatus using the same
CN102703867A (en) * 2012-01-13 2012-10-03 东莞宏威数码机械有限公司 Electron bombardment coating machine
JP2015007269A (en) * 2013-06-25 2015-01-15 日本電子株式会社 Electron gun device for electron beam vapor deposition
EP3366804A1 (en) 2017-02-22 2018-08-29 Satisloh AG Box coating apparatus for vacuum coating of substrates, in particular spectacle lenses
KR20180097163A (en) * 2017-02-22 2018-08-30 자티슬로 아게 Box coating apparatus for vacuum coating of substrates, in particular spectacle lenses
US10913999B2 (en) 2017-02-22 2021-02-09 Satisloh Ag Box coating apparatus for vacuum coating of substrates, in particular spectacle lenses
KR102557106B1 (en) 2017-02-22 2023-07-20 자티슬로 아게 Box coating apparatus for vacuum coating of substrates, in particular spectacle lenses
KR20180098157A (en) * 2017-02-24 2018-09-03 자티슬로 아게 Box coating apparatus for vacuum coating of substrates, in particular spectacle lenses, and heating device for it
KR102542495B1 (en) 2017-02-24 2023-06-12 자티슬로 아게 Box coating apparatus for vacuum coating of substrates, in particular spectacle lenses
CN116598861A (en) * 2023-07-13 2023-08-15 西安交通大学 Structure, insulating material and method for inhibiting metal particles
CN116598861B (en) * 2023-07-13 2023-10-20 西安交通大学 Structure, insulating material and method for inhibiting metal particles

Also Published As

Publication number Publication date
JP5280149B2 (en) 2013-09-04

Similar Documents

Publication Publication Date Title
JP5280149B2 (en) Vacuum deposition equipment
JP6893697B2 (en) X-ray source with ionization tool
KR101849030B1 (en) Electron beam evaporation source and vacuum deposition apparatus
WO2013153604A1 (en) Electron gun device
US5418348A (en) Electron beam source assembly
JP6216177B2 (en) Electron beam evaporation system
JP2009299177A (en) Vacuum vapor-deposition apparatus
JPH0456761A (en) Thin film forming device
JP2015007269A (en) Electron gun device for electron beam vapor deposition
JP4793725B2 (en) Deposition electron gun
JP2012112002A (en) Vapor deposition apparatus
CN114914140A (en) Laser sputtering atom generating device
JP6017796B2 (en) Electron beam evaporation system
JP2010255059A (en) Vacuum deposition device
JP3961158B2 (en) Electron beam evaporator
JP2014185356A (en) Vapor deposition source and film forming apparatus
JP2007023364A (en) Vapor deposition system
US20240249908A1 (en) Dose Cup Assembly for an Ion Implanter
JP7541608B1 (en) Electron gun for deposition
JP2021085080A (en) Electron beam evaporation source and vacuum evaporation apparatus
JP2004269907A (en) Vacuum evaporation system
JPWO2013153604A1 (en) Electron gun equipment
JP4094994B2 (en) Electron source equipment
JP4073158B2 (en) Electron beam equipment
JP2018135593A (en) Vapor deposition apparatus

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110808

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20121018

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20121120

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121225

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130514

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130522

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 5280149

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150