JPS6280264A - Ion plating device - Google Patents

Abstract

PURPOSE:To provide the titled device which can form a film having a uniform thickness by bringing an ionization discharge region formed by an electron gun for irradiating an electron beam on the surface of the evaporating material in a crucible to the position above the crucible approximately perpendicular thereto by an electron deflection magnet. CONSTITUTION:To electron beam shot from the electron gun 1 in a vacuum atmosphere is irradiated to the evaporating material 3 in the crucible 2 to heat and ionize the material, the forming the ionization discharge region 12. The ion particles of the evaporating material in the region 12 stick to a material 5 to be treated to form the film. On the other hand, the electrons, secondary electrons or thermoelectrons reflected from the surface of the material 3 fly like broken arrows D in the horizontal direction opposite from the incident direction of the incident electrodes by the effect of an electron deflecting magnet 9 and scatter to the outside of the influence region of the magnetic field. However, an electron deflecting magnetic field 16 generated by the magnet 9 is formed in the flying direction of the electron groups in the direction orthogonal with the flying direction of the electron groups. The electron groups intruding the magnetic field 16 are consequently deflected about 90 deg. above the crucible 2 in the direction approximately perpendicular thereto and are captured by a capturing electrode 10 of positive potential provided above the magnetic field 16.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an ion plating device for forming a film on the surface of a substrate, and particularly relates to an ion plating device that can form a uniform film by correcting the deviation of the ionization discharge region. The present invention relates to a plating device.

[Prior Art] In general, an ion plating method using a vacuum is already known as a surface treatment technology for materials in place of painting, electroplating, etc. This ion plating method is a method in which the raw material for coating is irradiated with an electron beam in a vacuum atmosphere to form an ionized discharge region, and the ion particles of the evaporated material that rise from this region are attached to the workpiece to form a coating. be.

Here, a conventional ion plating apparatus will be explained based on FIG.

The electron beam generated from the electron gun 1 travels as shown by the broken line arrow A due to the action of the electron beam deflection magnetic field (Lentz force) formed in the direction perpendicular to the drawing, and reaches the evaporated material 3 in the crucible 2.
is heated to form an ionization discharge region 4 above it.

From this region 4, ion particles of the evaporated material rise toward the object 5 to be processed, which has been brought to a negative potential, and adhere to the object 5 to form a film. Note that within this ionization discharge region 4, the evaporation material and the introduced gas are in an ion state.

By the way, the electron beam reflected on the surface of the evaporation material, or the secondary electrons and thermoelectrons generated on this surface, fly almost horizontally to the opposite side from the incident electrons, as shown by the broken line arrow B, due to the action of the electron beam deflection magnetic field. .

Therefore, a trapping electrode 6 with a positive potential is provided at a horizontally low position with respect to the crucible 2, thereby trapping the reflected electron beam and the like.

[Problems to be Solved by the Invention] Incidentally, since the evaporation material etc. is also ionized by secondary electrons, thermionic electrons, or reflected electrons, the ionized discharge region 4 formed is not ionized by secondary electrons, thermionic electrons, or reflected electrons. This was caused by deflection in the direction of travel.

For this reason, the flying direction of the ionized particles of the evaporation material for ion plating is also affected by the discharge region 4, and the density of the ionized particles is biased, so that a uniform metal film is formed on the workpiece located directly above the crucible 2. was difficult to form.

In order to solve this problem, it may be considered to move the trapping electrode 6 above its current position to correct the bias of the ionization discharge region 4. However, if the trapping electrode 6 is simply moved upward, many of the secondary electrons, thermoelectrons, and reflected electrons from the crucible 2 will collide with the walls of the apparatus.

For this reason, since high-density electrons do not reach the trapping electrode 6 located above, the ionization density cannot be increased, resulting in poor energy efficiency.

For this reason, it may be considered to increase the atmospheric pressure to facilitate ionization, but in this case, a sufficient quality film will not be formed.

[Object of the Invention] The present invention focuses on the above-mentioned problems and has been devised to effectively solve the problems.

The purpose of the present invention is to position a discharge region with high ionization density in a low pressure region above a crucible by deflecting secondary electrons, thermal electrons, and reflected electrons upward using an electron deflection magnetic field generated by an electron deflection magnet. An object of the present invention is to provide an ion plating apparatus that can form a film with a uniform thickness.

[Summary of the Invention] In order to achieve the above object, the present invention provides a crucible that houses an evaporation material, an electron gun that irradiates the material with an electron beam to form an ionization discharge region, and a crucible that stores evaporation material ions. Electron deflection for deflecting reflected electrons, secondary electrons, and thermoelectrons upward in the direction of flight of the object to which particles are attached and the material, thereby positioning the ionization discharge region vertically above the crucible. It is comprised of an electron deflection magnet that forms a magnetic field and a capture electrode that captures the deflected electrons, and corrects the bias in the ionization discharge region by deflecting electrons from the material upward by the electron deflection magnetic field. The gist is that the crucible is positioned almost vertically above the crucible.

[Embodiment] A preferred embodiment of the present invention will be described below in detail with reference to the accompanying drawings.

FIG. 1 is a schematic configuration diagram showing a preferred embodiment of the present invention, and FIG.
The figure is a perspective view showing an electron deflection magnet used in the present invention.

As shown in the figure, 7 is a cylindrical casing that is evacuated by a vacuum pump 8, and an ion plating device is provided inside this casing. This ion plating apparatus includes a crucible 2 that accommodates an evaporation material 3, an electron gun 1 that irradiates the evaporation material with an electron beam, an object 5 to which generated ion particles of the evaporation material are attached, and a It is mainly composed of an electron deflection magnet 9, which is a feature of the present invention, which deflects a group of flying electrons, and a capture electrode 10, which captures reflected electrons and the like that are deflected by the electron deflection magnet 9.

Specifically, the crucible 2 is a water-cooled copper crucible, and the evaporation material 3 is accommodated in a recess formed on its upper surface.

An electron gun 1 is provided on the lower side of the crucible 2.
An electron beam is emitted to heat and ionize the evaporation material 3. Further, an electron beam deflection coil (not shown) is provided near the crucible 2.
An electron beam deflection magnetic field is formed that is directed toward the front of the drawing in a direction perpendicular to the plane of the paper. By adjusting the strength of this magnetic field, the electron beam emitted from the electron gun 1 is irradiated onto the evaporation material 3 in a circular arc as shown by the broken arrow C. In the illustrated example, the irradiated electrons are deflected by an electron beam deflection coil, but the evaporation material may be directly irradiated with electrons by an electron gun without using this coil. Crucible 2 is exposed by electron beam irradiation.
Above is an ionization discharge region 1 filled with ion particles of the evaporation material and ion particles of the gas introduced from the gas introduction port 11.
2 will be formed.

Further above the crucible 2 in the vertical direction, a workpiece 5 which is brought to a negative potential is attached, and is capable of sucking up positively charged evaporation material ion particles from the ionization discharge region 12 and depositing them. It looks like this.

Further, a heater 13 is provided above and close to the object to be processed 5, so that the object to be processed 5 can be heated.

On the other hand, the backscattered electrons reflected from the surface of the evaporation material and the secondary electrons or thermoelectrons emitted from the evaporation material fly in the horizontal direction opposite to the incident electrons, as shown by the broken line arrow, due to the influence of the electron beam deflection magnetic field. It will fly out of the range of influence of the magnetic field. However, near the crucible 2, there is an electron deflecting magnet 9 which is a feature of the present invention and which immediately deflects the group of electrons flying in the horizontal direction upward in the vertical direction of the crucible 2.
is provided as shown in FIG. 2, so that the electron group does not fly horizontally as it is, but is deflected upward.

Specifically, this electron deflection magnet 9 is made up of a pair of electromagnets 14 and 15 of different polarities, which are arranged diagonally above and close to the crucible 2 and facing each other along a direction perpendicular to the locus of the electron group. An electron deflection magnetic field 16 can be formed obliquely above the crucible from which the electron group is flying in a direction perpendicular to the locus of the electron group, that is, in a direction perpendicular to the drawing in FIG.

Therefore, the electron group flying into the electron deflection magnetic field 16 from the horizontal direction is deflected upward in the substantially vertical direction of the crucible 2 by the action of the Lorentz force. In this way, the secondary electrons, thermoelectrons, and reflected electrons can be deflected and propagated upwards in the crucible 2, so that the position of the ionization discharge region 12 that follows them is also deflected, and This occurs vertically upward.

In this case, in order to change the deflection angle of the electron group, the electromagnet 14
．． By increasing or decreasing the current in the coil 15, the strength of the electron deflection magnetic field 16 is changed.

Incidentally, as the electron deflecting magnet, a permanent magnet may be used instead of the electromagnets 14 and 15.

Above this electron deflection magnetic field 16, a trapping electrode 10 set to a positive potential is provided along a direction parallel to the electron deflection magnetic field, and secondary electrons deflected by the electron deflection magnetic field 16, It is designed to capture thermal electrons and reflected electrons.

Note that 20 in the figure is a shutter device that cuts off rising ion particles as necessary.

Next, the operation of the present invention configured as described above will be explained.

First, the inside of the casing 7 is maintained under vacuum by the action of the vacuum pump 8, while the optimum gas is introduced from the gas inlet 11.

In such a vacuum atmosphere, the electron beam emitted from the electron gun 1 is evaporated in the crucible 2 in a circular arc as shown by the broken arrow C due to the action of an electron beam deflection magnetic field generated by an electron deflection coil (not shown). The material 3 is irradiated, heated and ionized to form an ionized discharge region 12.

Since the evaporation material ion particles in this region 12 are positively charged, they are attracted toward the object to be processed 5 which has been brought to a negative potential, rise, and adhere to the object to be processed 5 to form a film. Become.

On the other hand, by the action of the electron beam deflection magnetic field, the backscattered electrons reflected from the surface of the evaporation material, the secondary electrons, and thermionic electrons emitted from the surface move in the horizontal direction opposite to the direction of incidence of the incident electrons, as shown by the dashed arrow. It will fly out of the range of influence of this magnetic field.

However, in the flight direction of this electron group, an electron deflection magnetic field 16 generated by the electron deflection magnet 9 is formed along a direction perpendicular to the flight direction of the electron group. The Lorentz force acts on the electron group and deflects the group of electrons approximately 90'' upward in the vertical direction of the crucible 2.Then, the deflected electrons are Capture electrode 1 at positive potential
0 will be captured.

In this way, secondary electrons, thermoelectrons, and reflected electrons are deflected above the crucible by the electron deflection magnetic field 16, so that the ionization discharge region 1 generated by following the electron gun is
2 is also different from the conventional example in that the crucible 2 is formed almost upward in the vertical direction. Therefore, the evaporated material ion particles flying upward from the discharge region 12 are hardly deflected, and a film of uniform thickness can be formed on the surface of the object 5 to be processed.

That is, by changing the traveling direction of secondary electrons, thermal electrons, and reflected electrons toward the upper side of the crucible using the electron deflection magnetic field 16 formed along the direction perpendicular to the flight direction of the electron group, the lateral direction of the conventional crucible is changed. Since the ionization discharge region, which was previously formed in a biased manner, is positioned and formed almost vertically above the crucible 2, the evaporation material ion particles can be raised without being biased.

In addition, by changing the deflection angle of the electron group, the ionization discharge region 12
In order to adjust the bias, the magnitude of the electron deflection magnetic field 16, that is, when an electromagnet is used as the electron deflection magnet 9, the coil current is changed. According to this method, the following excellent effects can be achieved.

(1) In the past, the ionization discharge region was formed unevenly in the lateral direction of the crucible, but according to the present invention, secondary electrons, thermoelectrons, and Since the reflected electrons are deflected upward of the crucible, a high-density ionization discharge region can be formed almost vertically above the crucible while keeping the internal pressure low.

■ Unlike conventional methods, the ionizing discharge region can be positioned almost vertically above the crucible, so the ion particles of the evaporated material rise without being deflected, creating a coating with a uniform thickness on the object to be processed. can be formed.

[Brief explanation of drawings]

FIG. 1 is a schematic configuration diagram showing a preferred embodiment of the present invention, and FIG.
This figure is a perspective view showing an electron deflection magnet used in the present invention, and FIG. 3 is a schematic configuration diagram showing a conventional ion plating apparatus. In addition, in the figure, 1 is an electron gun, 2 is a crucible, 3 is an evaporation material, and 5
9 is the object to be processed, 9 is the electron deflection magnet, 10 is the capture electrode, 12
is an ionizing discharge region, and 16 is an electron deflection magnetic field. Patent Applicant: Ishikawajima-Harima Heavy Industries Co., Ltd. Representative Patent Attorney: Nobuo Kinuya Figure 2 Figure 3

Claims (1)

[Claims] In an ion plating apparatus that irradiates the surface of an evaporation material with an electron beam and ionizes it, causing the generated ion particles of the evaporation material to adhere to the surface of a workpiece to form a film, the ion plating apparatus includes a crucible for storing the evaporation material; an electron gun that irradiates an electron beam toward the surface of the evaporation material in the crucible to form an ionization discharge region; and an electron gun provided above the crucible to which ion particles of the evaporation material rising from the ionization discharge region are attached. electron deflection for deflecting reflected electrons, secondary electrons, and thermoelectrons upward from the surface of the treated material and the evaporated material to position the ionization discharge region above the crucible in the vertical direction; An ion plating apparatus comprising: an electron deflection magnet that forms a magnetic field; and a trapping electrode that captures the electrons deflected upward by the electron deflection magnetic field.