CN102592930A - Ion source - Google Patents
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- CN102592930A CN102592930A CN2011103409628A CN201110340962A CN102592930A CN 102592930 A CN102592930 A CN 102592930A CN 2011103409628 A CN2011103409628 A CN 2011103409628A CN 201110340962 A CN201110340962 A CN 201110340962A CN 102592930 A CN102592930 A CN 102592930A
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- magnetic field
- ion beam
- ion source
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/04—Ion sources; Ion guns using reflex discharge, e.g. Penning ion sources
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/08—Ion sources; Ion guns using arc discharge
- H01J27/14—Other arc discharge ion sources using an applied magnetic field
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Abstract
The present invention provides a new ion source. Compared with the previous ion source, the new ion source has the same function with the previous ion source although having few number of electrodes. The ion source (1) of the present invention does not have a suppression electrode used for suppressing electrons to inflow from a downstream side (Z-direction side). The ion source (1) comprises: a plurality of electrodes (5, 6, 7) which are arranged along a lead-out direction of an ion beam (3); and magnetic field generation component (11) which is arranged at the downstream side (Z-direction side) of the electrodes (5, 6, 7) and at least has a pair of magnetic poles (20, 21), wherein the pair of magnetic poles (20, 21) generate a magnetic field across the ion beam (3) leaded out from the ion source (1).
Description
Technical field
The present invention relates to have the ion source of catching from the magnetic field production part of the ionogenic electronics of ionogenic downstream one side inflow.
Background technology
In the ion source of ion implantation apparatus, ion doping device or ion beam orienting device beam-plasma irradiation unit, used be called as the extraction electrode system, by the electrode group that a plurality of electrodes constitute, be used for drawing ion beam.
The example of such extraction electrode system is disclosed in Fig. 2 of patent documentation 1.At this, the electrode as constituting the extraction electrode system has used four electrodes such as plasma electrode, extraction electrode, inhibition electrode and grounding electrode.
The energy of the ion beam that the plasma electrode decision is drawn, extraction electrode is used between extraction electrode and plasma electrode, producing potential difference, and draws ion beam through the electric field that forms thus from plasma.Suppress electrode suppress electronics from the ion source downstream one side inflow ion source, it is negative potential that the current potential that suppresses electrode is configured to respect to earthing potential, has thus to make the turn back function of ion source downstream one side of the electronics with negative electrical charge.Grounding electrode is ground connection aspect electricity, is used for fixing current potential.
The electrode that in described extraction electrode system, uses is not limited to four.For example, in Fig. 1 of patent documentation 2, Fig. 2, disclose by plasma electrode, suppressed the extraction electrode system that three electrodes of electrode and grounding electrode constitute, used such extraction electrode system, also can draw ion beam from ion source.
Patent documentation 1: the open communique spy of Japan Patent opens 2007-115511 (Fig. 2, the 0037th section～the 0039th section)
Patent documentation 2: the open communique spy of Japan Patent opens flat 5-82075 (Fig. 1, Fig. 2, the 0011st section)
In order to be set in the current potential of employed each electrode in the extraction electrode system, a plurality of power supplys have been used.Because described power supply costs an arm and a leg, so expectation is not used as far as possible.
In order to reduce the quantity of power supply, can consider to reduce the number of electrode, can cause obstacle to ionogenic function but only cancel electrode merely.
Summary of the invention
So, the purpose of this invention is to provide a kind of new ion source, this new ion source is compared with prior ion source, although number of poles is few, has and the prior ion source identical functions.
The present invention provides a kind of ion source, does not have the inhibition electrode that suppresses electronics one side inflow from downstream, said ionogenic being characterised in that, and said ion source comprises: a plurality of electrodes, draw the direction configuration along ion beam; And the magnetic field production part, be configured in downstream one side of said electrode, have a pair of magnetic pole at least, this a pair of magnetic pole produces the magnetic field of crossing the said ion beam of drawing from said ion source.
Compare with prior ion source according to the described ion source of magnetic field production part that comprises, not only can reduce number of poles, can also have and the prior ion source identical functions.
In addition; The direct of travel of the ion beam of deflection for modifying factor magnetic field production part; Preferably; Said magnetic field production part has first pole pair and second pole pair at the diverse location of drawing on the direction along said ion beam, and the magnetic field that between said first pole pair and said second pole pair, produces is in the opposite direction, and said first pole pair and said second pole pair have a pair of magnetic pole that clips said ion beam configuration.
Adopt described structure can revise the direct of travel of ion beam.
In addition, preferably, said first pole pair and said second pole pair are made up of magnet, and the magnet that constitutes said first pole pair and said second pole pair is connected through permanent magnet.
Adopt described structure can simplify the structure of magnetic field production part.
In addition, preferably,, said ion beam is applied the in the opposite direction and big or small basic Lorentz force that equates through between said first pole pair and the magnetic field that between said second pole pair, produces.
Adopt described structure, can be identical substantially through the direct of travel of the front and back maintenance ion beam of magnetic field production part at ion beam.Therefore can easily design the whole optical system of ion beam irradiation apparatus.
In addition, preferably, on said magnetic pole, be formed with the electrode support groove, setting is extended with the vertical basically direction of direction of drawing of said ion beam in this electrode support groove edge.
Adopt described structure, owing to can use magnetic field production part supporting electrode, so need not to be provided with especially the supporting member of electrode.
In addition, preferably, on the face of said magnetic pole, dispose the electrode that is positioned at downstream one side in the said electrode.
Even adopt such structure, also can be identical with aforesaid structure, can use magnetic field production part supporting electrode, therefore need not to be provided with especially the supporting member of electrode.
Owing to used and suppressed electronics and replace the inhibition electrode that extraction electrode system in the past, uses from the magnetic field production part of ion source downstream one side inflow; So compare with prior ion source; Not only can reduce number of poles, and can have and the prior ion source identical functions.
Description of drawings
Fig. 1 is the plane graph of an ionogenic example of expression the present invention use.
Fig. 2 is the ion source situation of Fig. 1 is seen in expression from directions X a plane graph.
Situation when Fig. 3 representes electronics inflow magnetic field production part.
Fig. 4 is other examples with magnetic field production part of first pole pair, second pole pair.
Fig. 5 is the example with magnetic field production part of a pair of magnetic pole.
Fig. 6 is other examples with magnetic field production part of a pair of magnetic pole.
Fig. 7 is an example of the electrode support structure that on the production part of magnetic field, forms.
Fig. 8 is other examples of the electrode support structure that on the production part of magnetic field, forms.
Description of reference numerals
1. ion source
3. ion beam
4. plasma generates container
5. plasma electrode
6. extraction electrode
7. grounding electrode
8. filament
9. plasma
10. insulating part
11. magnetic field production part
13. permanent magnet
14. magnet
16. electrode support groove
17. electrode support face
20. first pole pair
21. second pole pair
Embodiment
In the present invention, establish the draw direction of Z direction for the ion beam of drawing from ion source, establish with the orthogonal both direction of Z direction be directions X, Y direction.In addition, in the present invention, so-called downstream one side is meant that ion beam draws direction one side (Z direction one side).
Fig. 1 has represented the ionogenic example that the present invention uses.This ion source 1 is be called as the bucket type ion source type ionogenic a kind of.
This ion source 1 has rectangular plasma and generates container 4, generates container 4 from plasma and draws the ion beam 3 that is roughly band shape.Among the embodiment below; The shape of the ion beam 3 that will draw from ion source 1 is made as at directions X the shape that has long limit, has a minor face in the Y direction and describes, but the shape of the ion beam 3 that in using ion source 1 of the present invention, uses is not limited thereto.
Generate at plasma on the side of container 4, the filament 8 of a plurality of U-shapeds is installed along directions X.Use is connected the power supply V between filament 8 terminals
F, the magnitude of current of each filament 8 of flowing through is regulated.Through adopting described structure, can regulate the electric current distribution of the ion beam 3 of drawing from ion source 1.
Through electric current is flowed in filament 8, make this filament 8 heating, thereby can discharge electronics from filament 8.This electron bombardment is provided to plasma and generates container 4 gas inside, causes ionisation of gas, in plasma generates container 4, generates plasma 9.
In addition, in described ion source 1, generate container 4 outer walls along plasma a plurality of permanent magnets 12 are installed.Form the cusped magnetic field through this permanent magnet 12 at the interior zone that plasma generates container 4, will close in the regulation zone from the electronics that filament 8 discharges.
In prior ion source; Has the inhibition electrode as one of described electrode group; The current potential that the current potential of this inhibition electrode is configured to respect to grounding electrode is the negative potential about 500V; And one side (said ion source relies on Z direction one side from the present invention) flows into ion source from ionogenic downstream to suppress electronics, but should not suppress electrode in the present invention.Replace therewith the magnetic field production part of stating after the present invention has 11.
The inhibition electrode pair does not influence with expansion from the energy of the ion beam 3 that ion source 1 is drawn.In addition, be used for setting the employed inhibition power supply of current potential that suppresses electrode, when between the electrode of extraction electrode system, producing paradoxical discharge, the possibility that causes flowing through big electric current is big.For this reason, must make the capacity that suppresses power supply enough big.In this case, the power supply price also becomes expensive.Be conceived to this respect, from ionogenic extraction electrode system, deleted the inhibition electrode in the present invention.
The magnetic field production part 11 of this execution mode has first pole pair 20 and second pole pair 21 along the Z direction, and ion beam 3 is through each pole pair 20, between 21.Fig. 1 has described to clip the situation of a side of the described pole pair 20,21 of ion beam 3 configurations.
Each pole pair 20,21 is made up of magnet 14 one by one, constitutes different magnetic poles right magnet 14 and connects through permanent magnet 13.A relative side clips ion beam 3 and also is provided with the structure identical with this structure shown in Figure 1 on the Y direction, still, the polar orientation that constitutes the permanent magnet 13 that is provided with between the right magnet 14 of different magnetic poles with shown in Figure 1 on the contrary.
In the magnetic field of said structure production part 11, in first pole pair 20, effect has roughly the Lorentz force F1 towards directions X to ion beam 3.On the other hand, in second pole pair 21, to ion beam 3 effect have roughly towards with the rightabout Lorentz force F2 of directions X.Because through described structure, the ion beam 3 that can make by 20 deflections of first pole pair through second pole pair 21 bending round about goes back, so can revise the direct of travel of ion beam 3.
If take all factors into consideration fine degree through the device of ion beam irradiation apparatus manufacturing, be configured in the optics (analyzing magnet and accelerating tube etc.) of ion source 1 downstream one side performance and structure, or from ion source 1 to ion beam the factors such as distance of 3 targets (wafer or glass substrate etc.) of being shone, then the direct of travel of ion beam 3 not necessarily must be parallel with the Z direction.
Owing to be provided with and the structure of ion beam irradiation apparatus and the corresponding allowed band of device of manufacturing, as long as be modified to the direct of travel through the ion beam behind the magnetic field production part 11 3 in described allowed band just enough.Therefore the described size that acts on Lorentz force F1 and Lorentz force F2 on the ion beam 3 need not be identical.
, under the situation of having considered the optical design that ion beam irradiation apparatus is whole,, hope, make the direct of travel of ion beam 3 keep identical substantially in the front and back of ion beam 3 through magnetic field production part 11 in order easily to carry out this optical design.Therefore consider from such viewpoint, hope that the Lorentz force F1 and the Lorentz force F2 that act on the ion beam 3 are equal basically.
In addition; At Lorentz force F1 and Lorentz force F2 under the in the opposite direction and big or small basic situation about equating; Get into position A1 and the position A2 of the central orbit that has gone out the ion beam 3 behind the magnetic field production part 11 of the central orbit of the ion beam 3 before the magnetic field production part 11, separating distance D only on directions X.But departing from of this central orbit can't become problem.
In order to use magnetic field production part 11 to suppress electronics, as long as it is just enough to form the magnetic field of the so little magnetic flux density of number mT to ion source 1 one side inflows.Though also relevant with the energy value and the ionic species of the ion beam of drawing from ion source 13, ion beam 3 can't become so big because of the amount of magnetic field production part 11 deflections.Therefore the value of distance B neither be so big.
The size of distance B is not so big, even but under the situation that the value that also need make distance B like this reduces, as long as make first pole pair 20 and second interval of pole pair 21 on the Z direction narrow down just passable.In this case, because ion beam 3 is after initial deflection, deflection round about at once is so it is closely-spaced that the interval of distance B is become.But if make the interval of first pole pair 20 and second pole pair 21 narrow, the magnetic field that then will consider to be produced by permanent magnet 13 is to the influence of ion beam 3.Therefore, need consider to set the interval of first pole pair 20 and second pole pair 21 for suitable value on the basis of magnetic field that produces by permanent magnet 13 to the influence of ion beam 3.
In addition, also can estimated distance D, make ion source 1 be configured to leave in advance to a lateral deviation opposite with directions X.Through carrying out such configuration, can be in the ion beam optical system of the downstream that are configured in ion source 1 one side, do not produce the influence that causes that departs from because of the central orbit of ion beam 3.
Fig. 2 has described the situation when directions X is seen the ion source 1 of Fig. 1.In addition, in this Fig. 2, omitted being connected the power supply (V on plasma electrode 5 and filament 8 grades
F, V
1～V
4) and the record of ground connection (ground).
Each magnet 14 that constitutes first pole pair 20 and second pole pair 21 is 3 one side-prominent along the Y direction towards ion beam.Through such formation magnet 14, can easily produce the magnetic field of crossing the ion beam 3 of drawing to the Z direction.
In addition, the magnetic direction that in first pole pair 20, produces is opposite with the magnetic direction that in second pole pair 21, produces, and produces rightabout Lorentz force F1 and Lorentz force F2 by such magnetic field.
In addition; Magnetic field production part 11 can be installed on the inwall of scaffold of the grounding electrode 7 that not have in the drawings to represent through bolt etc.; The scaffold of said grounding electrode 7 is provided with from extending towards the Z direction of grounding electrode 7 downsides; Different therewith in addition, magnetic field production part 11 also can be installed on the flange of ion source 1.
Fig. 3 has described the situation of electronics from the downstream one side inflow magnetic field production part 11 of ion source 1.If electronics enters into the field region that second pole pair 21 forms, then electronics is advanced along screw limit, magnetic line of force limit.Like this, owing to caught electronics, enter into the upper reaches one side of magnetic field production part 11 (side in the opposite direction) with Z so can prevent electronics through magnetic field production part 11.
The variation of the magnetic field production part 11 that (e) of (a)～Fig. 4 of Fig. 4 described hereto to narrate.Describe in the face of these structures down.In addition, in each figure, the direction of X, Y, Z axle is general, and the arrow of on each pole pair 20,21, describing is represented the direction in magnetic field.
In (a) of Fig. 4, constitute each pole pair 20,21 through permanent magnet 13.The quantity of permanent magnet 13 has increased by two than the structure of in Fig. 1～Fig. 3, narrating, and magnetic field of the present invention production part 11 also can adopt the structure of Fig. 4 (a).
Also (a) with Fig. 4 is identical in (b) of Fig. 4, constitutes each pole pair 20,21 through permanent magnet 13.Because permanent magnet 13 need not to be arranged on the end of magnet 14, so can certainly adopt the structure shown in (b) of Fig. 4.In addition, the part of the magnet 14 in Fig. 4 (a), Fig. 4 (b) also can adopt nonmagnetic body.In addition, no matter be magnet or nonmagnetic body, also can be employed in the structure that on the Z direction each pole pair is supported separately.
(c) of Fig. 4 described the magnetic field production part 11 similar structures described with Fig. 1～Fig. 3.Shown in Fig. 4 (c), also can so that each pole pair 20,21 from constituting each pole pair 20,21 to ion beam 3 one side-prominent modes midway at the magnet 14 that extends along the Z direction.
In (d) of Fig. 4, constitute first pole pair 20, constitute second pole pair 21 with magnet 14 with permanent magnet 13.Be connected on the permanent magnet 13 that constitutes first pole pair 20 owing to constitute the magnet 14 of second pole pair 21, thus identical with the example of Fig. 4 (c), can reduce the quantity of permanent magnet 13.In addition, also can with the inverted configuration of Fig. 4 (d), constitute first pole pair 20 with magnet 14, with permanent magnet 13 formations second pole pair 21.
In addition, shown in Fig. 4 (e), replace permanent magnet 13, also can through coil 15 on each magnet 14 that is configured on the Y direction, in coil 15, flow through electric current generation magnetic field.With respect to each magnet 14 coil 15 under the situation that equidirectional twines, make the current opposite in direction that flows through each coil in advance.Otherwise, under the situation of twining coil 15 round about, make the sense of current that flows through each coil identical in advance with respect to each magnet 14.In the example of Fig. 4 (e), the direction of the coil 15 on the left side magnet 14 is dextrorotation, and in contrast, the direction of the coil 15 on the right side magnet 14 is left-handed.Therefore, with respect to each coil 15 to identical direction (the Z direction towards on from the top down) flow through electric current.Identical with other examples, through such structure, also can produce rightabout magnetic field with the mode of crossing ion beam 3.
In addition, under the situation of having used coil 15, intensity that can controlling magnetic field.Therefore, the direct of travel of one side measurement ion beam 3 in ion source 1 downstream can be finely tuned with the direct of travel of 11 pairs of ion beams 3 of magnetic field production part in view of the above in advance.In addition, in (e) of Fig. 4, can be made of one the magnet 14 that constitutes each pole pair 20,21, also can be separated into independently magnet to the magnet 14 of each pole pair 20,21, respectively winding around 15.So, can pass through the magnetic field intensity that the meticulous adjusting of each pole pair is formed by each pole pair.
In addition; In (e) of (a)～Fig. 4 of Fig. 4, only described the situation in the YZ plane; 11 pairs of production parts are under the situation that the ribbon ion beam that has long limit on the directions X 3 is handled but in the magnetic field of this record; Identical with magnetic field production part 11 shown in Figure 1, on directions X, also have certain-length.
(c) of (a)～Fig. 5 of Fig. 5 described to have the example of the magnetic field production part 11 of a pair of magnetic pole 22.Identical with Fig. 4, in each figure, the direction of X, Y, Z axle is general, and drawn arrow is represented the direction in magnetic field in pole pair.The energy of ion beam 3 than condition with higher (for example more than the 300keV) under, the magnetic field that ion beam 3 hardly can reason magnetic field production part 11 produces and deflection.In addition, as previously mentioned, even under the low situation of the energy of ion beam 3, if the direct of travel through the ion beam 3 behind the magnetic field production part 11 in allowed band, then also need not to produce and is used to magnetic field that ion beam 3 bendings are gone back.Therefore, shown in (a)～Fig. 5 of Fig. 5 (c), also can only produce the magnetic field of crossing ion beam 3 in one direction.
(a) of Fig. 5 discloses the magnetic field production part 11 that is made up of one group of permanent magnet 13 and their magnet 14 of supporting.In this example, be configured in the permanent magnet 13 that constitutes a pair of magnetic pole 22 central portion on the Z direction of magnet 14, but also can be arranged on the end on the Z direction of magnet 14 to the permanent magnet 13 that constitutes a pair of magnetic pole 22.In addition, used magnet 14 as the supporting member of permanent magnet 13, but also can use the supporting member of nonmagnetic body as permanent magnet 13.
It is outstanding on the Y direction that (b) of Fig. 5 discloses the magnet 14 that supports one group of permanent magnet 13, forms the magnetic field production part 11 of a pair of magnetic pole 22 thus.The present invention also can adopt such structure.
(c) of Fig. 5 discloses the magnetic field production part 11 of coil 15 on one group of magnet 14.About the direction of the direction of winding around 15 and the electric current I that in coil 15, flows through, also can be identical with the example of Fig. 4 (e).
In addition, identical with magnetic field production part 11 shown in Figure 1 under to situation about handling in the structure of (a)～Fig. 5 of Fig. 5 (c) in the ribbon ion beam that long limit is arranged on the directions X 3, certain-length is also arranged on directions X.
Other examples of the magnetic field production part 11 of a pair of magnetic pole 22 have been described to have among Fig. 6.In this example, the outstanding part on the Y direction of magnet 14 constitutes a pair of magnetic pole 22.In this case, if the position that ion beam 3 passes through near permanent magnet 13, then ion beam 3 receives the influence from the high-intensity magnetic field of permanent magnet 13, has the problem of the warpage of ion beam 3.Therefore, the part that preferably makes a pair of magnetic pole 22 that ion beam 3 passes through from permanent magnet 13 enough far.
The example that the electrode support of having described on the production part of magnetic field, to form among Fig. 7 is constructed.On first pole pair 20 that is configured in extraction electrode system one side that constitutes magnetic field production part 11, be formed with and extending the electrode support groove 16 that is provided with on the vertical basically direction of direction with drawing of ion beam 3.
In this example, the grounding electrode 7 that is arranged near first electrode pair, 20 positions is contained in said electrode support groove 16 through the mode of sliding.In this case, grounding electrode 7 itself is not electrically connected with ground, but magnet 14 ground connection of supporting grounding electrode 7.In addition, in this example, enumerated structure, but also can on aforesaid magnetic field production part 11 with a pair of magnetic pole 22 structures, be arranged on the electrode support groove 16 of this record with first pole pair 20 and second pole pair 21 as magnetic field production part 11.
Other examples that the electrode support of having described on the production part of magnetic field, to form among Fig. 8 is constructed.(a) of Fig. 8 for the face of the upside that makes first pole pair 20 that is configured in extraction electrode system one side that constitutes magnetic field production part 11 as the electrode support face, be fixed on grounding electrode 7 on this electrode support face with bolt 18 grades.Fig. 8 (b) described this situation.
Identical with the example of Fig. 7, as also can the example of Fig. 8 to be applied to explained among Fig. 5, Fig. 6 magnetic field production part 11 with a pair of magnetic pole 22 structures.
Like this, through electrode support face 17 is set, can need not to prepare in addition the supporting member of electrode on the part of magnetic field production part 11.
< other variation >
In the present invention, be that example is illustrated with the bucket type ion source, but the invention is not restricted to the ion source of the type.For example also can be freeman formula, Bai Nasishi or ion source with equipotential cathode.
In addition, the ion beam 3 of drawing from ion source is that example is illustrated with the ribbon ion beam 3 that has long limit at directions X, has a minor face in the Y direction, but ion beam 3 shapes of drawing are not limited thereto.The shape of the ion beam of for example drawing also can be a point-like.
In addition, the number of filament 8 can not be a plurality of also, can be one.In addition, do not suppress electrode as long as constitute the electrode group of extraction electrode system, then which type of number can.
On the other hand, in the execution mode of the present invention's explanation, make the central authorities between each pole pair that are centered close to of ion beam 3, but also can make magnetic pole one side of center deflection of ion beam 3.But, in the center of ion beam 3 under the situation of the central authorities between the magnetic pole, because ion beam 3 deflection symmetrically during through magnetic field, so we can say processing easily in the optical system being connected on ion source after.
In addition, the electrode that uses as the extraction electrode system is not limited to porous electrode, also can be the electrode with slit.
In addition, in this execution mode, as expression among the figure, the direction in the magnetic field that is produced by magnetic field production part 11 is vertical basically relations with the direct of travel of ion beam 3, also can not be vertical basically relation still.For example, also can be the relation of direct of travel skewed crossing of direction and the ion beam 3 in the magnetic field that produces by magnetic field production part 11.Can cross ion beam 3 as long as the magnetic field that is produced by magnetic field production part 11 forms, then the two relation of the direct of travel of the direction in the magnetic field that produces of magnetic field production part 11 and ion beam 3 is which type of can.
Except the narration of front, in the scope that does not break away from aim of the present invention, certainly carry out various improvement and distortion.
Claims (6)
1. an ion source does not have the inhibition electrode that suppresses electronics one side inflow from downstream, said ionogenic being characterised in that, and said ion source comprises:
A plurality of electrodes are drawn direction configuration along ion beam; And
The magnetic field production part is configured in downstream one side of said electrode, has a pair of magnetic pole at least, and this a pair of magnetic pole produces the magnetic field of crossing the said ion beam of drawing from said ion source.
2. ion source according to claim 1; It is characterized in that; Said magnetic field production part has first pole pair and second pole pair at the diverse location of drawing on the direction along said ion beam; And the magnetic field that between said first pole pair and said second pole pair, produces is in the opposite direction, and said first pole pair and said second pole pair have a pair of magnetic pole that clips said ion beam configuration.
3. ion source according to claim 2 is characterized in that, said first pole pair and said second pole pair are made up of magnet, and the magnet that constitutes said first pole pair and said second pole pair is connected through permanent magnet.
4. according to claim 2 or 3 described ion sources, it is characterized in that,, said ion beam is applied the in the opposite direction and big or small basic Lorentz force that equates through between said first pole pair and the magnetic field that between said second pole pair, produces.
5. ion source according to claim 1 is characterized in that, on said magnetic pole, is formed with the electrode support groove, and setting is extended with the vertical basically direction of direction of drawing of said ion beam in this electrode support groove edge.
6. ion source according to claim 1 is characterized in that, on the face of said magnetic pole, disposes the electrode that is positioned at downstream one side in the said electrode.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011-002578 | 2011-01-08 | ||
| JP2011002578A JP5527617B2 (en) | 2011-01-08 | 2011-01-08 | Ion source |
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| CN102592930A true CN102592930A (en) | 2012-07-18 |
| CN102592930B CN102592930B (en) | 2014-07-30 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110379697A (en) * | 2018-04-12 | 2019-10-25 | 日新离子机器株式会社 | The method of operation of ion source, ion beam irradiation apparatus and ion source |
| CN111250016A (en) * | 2020-02-06 | 2020-06-09 | 徐国栋 | Liquid plasma device for treating tumor and skin disease |
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| WO2019207958A1 (en) * | 2018-04-26 | 2019-10-31 | 国立大学法人名古屋大学 | Atomic beam generation device, joining device, surface modification method and joining method |
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| US5691537A (en) * | 1996-01-22 | 1997-11-25 | Chen; John | Method and apparatus for ion beam transport |
| JP3159097B2 (en) | 1997-01-10 | 2001-04-23 | 日新電機株式会社 | Film formation method |
| JP3593993B2 (en) * | 2001-05-01 | 2004-11-24 | 日新電機株式会社 | Faraday device |
| JP4411581B2 (en) | 2003-06-13 | 2010-02-10 | 株式会社Ｓｅｎ | Ion source device and electron energy optimization method therefor |
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2011
- 2011-01-08 JP JP2011002578A patent/JP5527617B2/en not_active Expired - Fee Related
- 2011-11-02 CN CN201110340962.8A patent/CN102592930B/en not_active Expired - Fee Related
- 2011-11-11 KR KR1020110117298A patent/KR101248126B1/en not_active IP Right Cessation
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPS63250038A (en) * | 1987-04-03 | 1988-10-17 | Matsushita Electric Ind Co Ltd | Microwave ion source |
| JPH01209645A (en) * | 1988-02-16 | 1989-08-23 | Toshiba Corp | Ion source and electron gun |
| JP2003270400A (en) * | 2002-03-18 | 2003-09-25 | Taiyo Material:Kk | Pig type negative ion source for neutron generation tube |
| JP2004055390A (en) * | 2002-07-22 | 2004-02-19 | Nissin Electric Co Ltd | Ion source |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110379697A (en) * | 2018-04-12 | 2019-10-25 | 日新离子机器株式会社 | The method of operation of ion source, ion beam irradiation apparatus and ion source |
| CN111250016A (en) * | 2020-02-06 | 2020-06-09 | 徐国栋 | Liquid plasma device for treating tumor and skin disease |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102592930B (en) | 2014-07-30 |
| JP2012146424A (en) | 2012-08-02 |
| JP5527617B2 (en) | 2014-06-18 |
| KR101248126B1 (en) | 2013-03-28 |
| KR20120081009A (en) | 2012-07-18 |
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