KR20120132318A - Ion implantation apparatus - Google Patents

Abstract

PURPOSE: An ion implantation apparatus is provided to reduce electric power consumption by leaning the progress direction of ion beam to longitudinal direction of ion beam. CONSTITUTION: An ion source(2) generates a ribbon-shaped ion beam. A mass separation magnet(3) is arranged in downstream of the ion source. The mass separation magnet leans the progress direction of ion beam toward longitudinal direction of ion beam. An analysis slit(4) passes through an ion beam which includes the desired ion species. The direction of magnetic field diagonally crosses the main surface of ion beam which passes through the inside of a mass separation magnet.

Description

Ion implanter {ION IMPLANTATION APPARATUS}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion implantation apparatus for carrying out ion implantation treatment on a substrate by separating a ribbon ion beam.

DESCRIPTION OF RELATED ART Conventionally, the ion implantation apparatus which mass-separates a ribbon-shaped ion beam and performs an ion implantation process to a board | substrate is used, The example is disclosed by patent document 1. As shown in FIG.

The mass separation magnet used in the ion implantation apparatus of Patent Literature 1 is long in one direction, and has a band-shaped ion beam (also called a ribbon shape or sheet shape) having a thickness in a direction orthogonal to the longitudinal direction in the longitudinal direction. It is equipped with a pair of magnetic poles opposingly arrange | positioned. A coil is wound around each magnetic pole, and a magnetic field is generated between the magnetic poles by supplying a current to the coil. Using this magnetic field, the band-shaped ion beam is bent to have a curvature in the thickness direction, and the band-shaped ion beam is moved in the thickness direction at the position of a separation slit (also called an analysis slit) located downstream of the mass separation magnet. The mass is separated by converging with.

Japanese Patent Laid-Open No. 2008-243765 (paragraphs 0021 to 0022, Fig. 2).

In recent years, the longitudinal dimension of the ribbon ion beam has been lengthened with the increase in the size of the substrate. In the case of a large substrate such as a glass substrate, an ion beam having a dimension in the longitudinal direction of about 600 mm to 900 mm and a dimension in the thickness direction of about 30 mm to 100 mm is used. In addition, even if the substrate is a relatively small semiconductor substrate such as a silicon wafer, in the future, a large substrate, which is a standard, may have a diameter dimension of up to 450 mm. Therefore, an ion beam having a length of about 500 mm and a thickness of about 20 mm to 50 mm is considered to be used. have.

The distance between a pair of magnetic poles provided in the mass separation magnet of patent document 1 is set larger than the dimension of the longitudinal direction of a ribbon ion beam. In the case of implanting ions into a large substrate, the dimension of the longitudinal direction of the ion beam to be handled becomes very large, and thus it is necessary to widen the distance between magnetic poles more than ever.

Normally, the magnetic field in the mass separation magnet is designed to have a uniform magnetic field distribution with a desired intensity over the entire ion beam to be subjected to mass separation. This uniform magnetic field distribution is required to make the mass separation with high precision by making the deflection amount of the ion beam to be separated by mass to be almost the same amount over the entire area of the ion beam.

However, when the distance between the magnetic poles is widened, the magnetic field distribution occurs in the longitudinal direction of the ribbon-shaped ion beam. As the distance between the magnetic poles becomes wider, the lines of magnetic force generated between oppositely arranged magnetic poles are curved at the circumferential ends of the magnetic poles. As a result, the magnetic flux density in the center of the opposite magnetic poles is relatively coarse, and the magnetic flux density in the vicinity of the magnetic poles is denser. Under these influences, a difference also occurs in the amount of deflection of the ribbon ion beam passing through the magnetic poles. Specifically, the amount of deflection of the ribbon ion beam passing through the center portion between the magnetic poles is smaller than the amount of deflection of the ribbon ion beam passing near the magnetic poles, resulting in distortion in the shape of the ion beam in the longitudinal direction. Since the pair of magnetic poles constituting the mass separation magnet of Patent Literature 1 are disposed opposite in the longitudinal direction of the ribbon ion beam, the difference in the deflection amount in the longitudinal direction of the ribbon ion beam described above is large, resulting in high precision mass separation. It becomes difficult to do

On the other hand, in the mass separation magnet described in Patent Literature 1, in order to improve the uneven magnetic flux density distribution occurring between the magnetic poles, the magnetic pole dimension in the thickness direction of the ribbon-shaped ion beam is sufficiently enlarged, and the ribbon-shaped ion beam is located near the center part. It is conceivable to construct a mass separation magnet so as to pass through it, but in that case, the dimensions of the mass separation magnet become very large.

Further, as the distance between the magnetic poles increases, the strength of the magnetic field generated between the magnetic poles becomes weaker. While the strength of the magnetic field is weakened, the amount of deflection required for mass separation of the ion beam remains unchanged. Therefore, it is necessary to enhance the magnetic field strength by increasing the amount of current flowing through the coil wound around each magnetic pole of the mass separation magnet. In this case, the power consumption of the mass separation magnet increases as the amount of current increases.

Therefore, in the present invention, as the size of the substrate increases, even when the length of the ribbon ion beam in the longitudinal direction is increased, the magnetic field distribution between the magnetic poles is uniform, the dimensions are small, and the power consumption is small compared with the conventional configuration. It is an object of the present invention to provide an ion implantation apparatus having a mass separation magnet.

An ion implantation apparatus according to the present invention comprises an ion source for generating a ribbon-shaped ion beam elongated in one direction, and downstream of the ion source, the ion beam being positioned in a plane defined by a longitudinal direction and a traveling direction of the ion beam. A mass separation magnet having a pair of magnetic poles disposed across the main surface and biasing the traveling direction of the ion beam in the longitudinal direction of the ion beam by a magnetic field generated between the magnetic poles, and the mass An ion implantation apparatus comprising an analysis slit for passing an ion beam containing a desired ion species among ion beams passing through a separation magnet, and a processing chamber in which a substrate to which the ion beam has passed through the analysis slit is disposed is generated between the magnetic poles. The direction of the magnetic field is a direction crossing obliquely across the main surface of the ion beam passing through the inside of the mass separation magnet It features.

Since the separation of the ribbon-like ion beam in the longitudinal direction of the ion beam is performed to separate the mass, the magnetic pole of the mass separation magnet can be disposed to face the main surface of the ion beam. Therefore, compared with the conventional structure in which magnetic poles are arranged to sandwich the ribbon-shaped ion beam in the longitudinal direction thereof, the distance between the magnetic poles can be made very small. As a result, the uniformity of the magnetic field distribution generated between the magnetic poles can be improved. In addition, since the uniformity of the magnetic field distribution is good, it is not necessary to increase the magnetic pole dimension in order to reduce the bias of the magnetic field distribution. Therefore, compared with the case where a uniform magnetic field distribution is formed by the conventional structure, the dimension of a mass separation magnet can be made small. In addition, since the distance between the magnetic poles is small, the strength of the magnetic field generated between the magnetic poles is sufficiently strong. Therefore, it is not necessary to increase the amount of current flowing through the coil wound around the magnetic pole, as in the case of the conventional mass separation magnet, in order to compensate for the weak magnetic field strength as the distance between the magnetic poles increases. Can be made small.

In the case of mass separation by deflecting the ribbon ion beam in the longitudinal direction, the ribbon ion beam containing the desired ion species and the ribbon ion beam containing the other ion species were separated in the longitudinal direction. . In this case, the dimension of the mass separation magnet is increased or the magnetic field generated inside the magnet is strengthened, so that the difference in the amount of deflection between the ribbon ion beam containing the desired ion species and the ribbon ion beam containing the other ion species is greatly reduced. Had to be loud. In contrast, in the ion implantation apparatus of the present invention, since the direction of the magnetic field generated between the magnetic poles is configured to be a direction crossing the main surface of the ion beam passing through the inside of the mass separation magnet, the thickness of the ribbon-shaped ion beam perpendicular to the main surface It is possible to separate the ribbon ion beam containing the desired ion species and other ion species in the direction. Therefore, there is no need to enlarge the mass separation magnet as described above and to enhance the magnetic field strength.

In a more specific configuration of the mass separation magnet, the magnetic pole has a dimension larger than that of the ion beam in the longitudinal direction of the ion beam.

In addition, the distance between the magnetic poles is characterized in that the inside of the mass separation magnet.

As the ion beam incident on the mass separation magnet, the traveling direction of the ion beam generated from the ion source may cross at an angle with respect to the direction of the magnetic field generated in the mass separation magnet.

In the configuration of the beam path between the ion source and the mass separation magnet, the traveling direction of the ion beam generated from the ion source is orthogonal to the direction of the magnetic field generated inside the mass separation magnet, and A pair of electrostatic deflection electrodes may be arranged in the beam path between the mass separation magnets to deflect the traveling direction of the ion beam in a thickness direction perpendicular to the main surface of the ion beam.

On the other hand, the following configuration can also be considered. While the traveling direction of the ion beam generated from the ion source is perpendicular to the direction of the magnetic field generated inside the mass separation magnet, the traveling direction of the ion beam is perpendicular to the main surface of the ion beam in the mass separation magnet. A pair of electrostatic deflection electrodes may be arranged to deflect in the direction.

Furthermore, a deflection electromagnet may be arranged in the beam path between the ion source and the mass separation magnet to deflect the traveling direction of the ion beam in the longitudinal direction of the ion beam.

In order to eject an ion beam that is approximately parallel in the longitudinal direction from the mass separation magnet, the tangents drawn on the trajectories of the plurality of ion beams passing through different locations in the longitudinal direction of the ion beam within the mass separation magnet are approximately equal to each other. It is preferable that the end part of the said pole arrange | positioned at the exit side of the said mass separation magnet is located on the line which connected the parallel point.

In addition, in the longitudinal direction of the ion beam in the longitudinal direction of the ion beam before and after passing through the inside of the mass separation magnet, the inside of the mass separation magnet passes through another place in the longitudinal direction of the ion beam in order to maintain substantially the same characteristics. It is desired that the trajectories of the ion beams be about the same length.

Regarding the arrangement of the analysis slits, it is preferable that the analysis slits are arranged at a position where the dimension in the thickness direction of the ion beam becomes approximately minimum. By arrange | positioning in this way, the ion beam containing a desired ion species and the ion beam containing other ion species can be isolate | separated precisely.

As the size of the substrate increases, even if the length of the ribbon ion beam is increased in length, the magnetic field distribution between the magnetic poles is uniform and the size is smaller than that of the conventional configuration. Moreover, power consumption can be made small.

1 shows a perspective view of a ribbon ion beam used in the present invention. Fig. 1 (A) shows a ribbon ion beam in which the longitudinal direction is substantially parallel, and Fig. 1 (B) shows a ribbon ion beam in which the longitudinal direction diverges.
Fig. 2 is a plan view showing the structure of one ion implantation apparatus according to the present invention, Fig. 2 (A) is a plan view in the YZ plane, and Fig. 2 (B) is a plan view in the XZ plane.
Fig. 3 shows a cross-sectional view of the mass separation magnet by C1, C2 and C3 lines shown in Fig. 2, Fig. 3 (A) shows a sectional view along the C1 line, and Fig. 3 (B) shows a sectional view along the C2 line. 3C is a cross-sectional view taken along the line C3.
4 is an explanatory diagram of a mass separation method according to the present invention, and FIG. 4 (A) shows a state in which an ion beam passing through an inside of a mass separation magnet is divided into components in the direction of the magnetic field and the direction perpendicular to the magnetic field. 4 (B) shows the trajectory of the ion beam containing the desired ion species passing through the mass separation magnet and the ion beam including the other ion species, and FIG. 4 (C) shows each position on the beam path, The position of each ion beam in the direction of the magnetic field is shown. In addition, FIG. 4 (D) shows the separation of each ion beam including ions of different masses in the analysis slit.
Fig. 5 is an explanatory view of a mass separation method in the case where the length of the trajectory of the ion beam passing through the inside of the mass separation magnet is different in the longitudinal direction of the ion beam. The trajectory of the ion beam including the species and the trajectory of the ion beam including other ionic species are shown. FIG. 5 (B) shows the separation of the respective ion beams containing different mass of ionic species in the analysis slit.
6 is an explanatory view of the configuration of the magnetic pole ends provided on the outlet side of the mass separation magnet. FIG. 6 (A) is an explanatory diagram according to the configuration method of the magnetic pole ends, FIG. 6 (B) shows the mass separation magnet constructed based on FIG. 6 (A), and FIG. 6 (C) shows the structure of FIG. 6 (B). It shows the state in which the incidence direction and the emission direction of the ion beam passing through the inside of the mass separation magnet are reversed.
It is explanatory drawing about the structure of the pole edge part provided in the exit side of a mass separation magnet. Fig. 7A is an explanatory diagram according to the configuration method of the magnetic pole ends, Fig. 7B shows a mass separation magnet constructed based on Fig. 7A, and Fig. 7C shows Fig. 7B. It shows the state when the direction of incidence and the outgoing direction of the ion beam passing through the mass separation magnet are reversed. 7 (D) shows a state in which the mass separation magnet is arranged by rotating the angle θ1 around the point P2 in the example of FIG. 7B.
Fig. 8 is a modification of the ion implanter described in Figs. 2A and 2B, which is an example of an ion device having an electrostatic deflection electrode that deflects the traveling direction of the ion beam in the thickness direction of the ion beam. FIG. 8A shows an example of an ion implantation apparatus in which a pair of electrostatic deflection electrodes are provided in a beam path between an ion source and a mass separation magnet, and FIG. 8B shows a pair of electrostatic deflection electrodes in a mass separation magnet. 8C is an example of an ion implantation apparatus, and FIG. 8C is an example of an ion implantation apparatus provided with a pair of electrostatic deflection electrodes in the downstream side of the analysis slit, in addition to the configuration of FIG. 8A.
Fig. 9 is a modified example of the ion implantation apparatus described in Figs. 2A and 2B, which is an example of an ion implantation apparatus having an electromagnet which deflects the traveling direction of the ion beam in the longitudinal direction of the ion beam in addition to the mass separation magnet. Fig. 9A is a plan view in the YZ plane, and Fig. 9B is a plan view in the XZ plane.
It is explanatory drawing about the arrangement position of the analysis slit in the ion implantation apparatus of this invention. Fig. 10A shows the ion beams in focus in the thickness direction, and Fig. 10B shows the view when Fig. 10A is viewed from another plane.

1A and 1B show examples of the ion beam 1 used in the present invention. These ion beams 1 show a state when the ion beam 1 flying through the beam path between the ion source 1 and the mass separation magnet 3 described in FIGS. 2A and 2B will be described later. will be. The ion beam 1 is generated from the ion source 2 described later, and proceeds along the Z-axis shown in the present invention (also referred to as the Z direction or the traveling direction of the ion beam 1 in the present invention), and the mass separation magnet described later ( Enter 3).

The length of the width WX in the direction of the X axis (also called the X direction or the longitudinal direction of the ion beam 1 in this invention) when cut | disconnected in the plane perpendicular | vertical to the advancing direction in FIG. It has a thickness WY which is sufficiently narrower than the width WX in the Y-axis direction (also called in the Y direction or the thickness direction of the ion beam 1 in the present invention). The ion beam 1 having such a rectangular cross section is generally called a ribbon or sheet-shaped ion beam. In addition, since the surface of the ribbon ion beam located in the XZ plane is wider than other surfaces, this surface is called the main surface in the present invention.

As an example of an ion source for generating such an ion beam 1, a bucket type ion source is known. More specifically, a rectangular parallelepiped plasma generation vessel having a plurality of permanent magnets for generating a cusp magnetic field, a plurality of filaments disposed along the longitudinal direction of the vessel in the plasma generation vessel, and one side of the plasma generation vessel. And a lead-out electrode system composed of a plurality of electrode groups arranged adjacent to the opening.

In the ion beam 1 described in Fig. 1A, both ends in the longitudinal direction are parallel to each other along the Z direction. In reality, however, it is not completely parallel, but is approximately parallel. Because the ion beam 1 is affected by the space charge effect, it diverges as it progresses in the Z direction. The degree of divergence varies depending on the ratio of electrons present in the beam path as long as the ion beam 1 has the energy or positive charge of the ion beam 1. It is also conceivable that the arrangement error of the plurality of electrode groups constituting the lead-out electrode system affects the parallelism of the ion beam 1. Therefore, it is difficult to make the ion beam 1 completely parallel in the longitudinal direction.

In view of the above, in the present invention, the ion beam 1 illustrated in FIG. 1A is characterized by the ion beam 1 having substantially parallel lengths of the ion beam 1 or, by design, the longitudinal direction of the ion beam 1. It is called the parallel ion beam 1.

In contrast, in the ion beam 1 described in FIG. 1B, the longitudinal direction of the ion beam 1 diverges (expands) along the Z direction. This divergence can be easily understood as the width WX1 in the longitudinal direction described in FIG. 1 (B) is expanded to the width WX2 as the ion beam 1 advances in the Z direction.

Like the ion beam 1 shown in Fig. 1A, the ion beam 1 is also called a ribbon or sheet ion beam and can be applied to the present invention. On the other hand, as an example of an ion source for generating such an ion beam 1, a Banas type ion source is known. More specifically, at least one sheet having a rectangular parallelepiped plasma generating vessel, a filament disposed in the plasma generating vessel, an opening formed on one side of the plasma generating vessel, and adjacent to the opening and having a slit-shaped opening. An electrode is provided. On the other hand, in the case of the ion beam 1 shown in FIG. 1B, similarly to the ion beam 1 shown in FIG. 1A, some divergence occurs due to the effect of the space charge effect.

2 (A) and 2 (B) show an example of the ion implantation apparatus IM according to the present invention. In FIG. 2 (A) and FIG. 2 (B), the plane shown is different. In these figures, the ion beam 1 described in FIG. 1A is drawn, but the ion beam 1 described in FIG. 1B may be used instead.

The ion beam 1 generated by the ion source 2 travels in a direction intersecting at an angle with respect to the direction of the magnetic field B generated in the mass separation magnet 3 having the pair of magnetic poles 9. The ion beam 1 incident on the mass separation magnet 3 is deflected in the longitudinal direction by the magnetic field B, as shown in Fig. 2B.

The ion beam 1 generated from the ion source 2 contains various ion species, and only the ion beam 1 containing the desired ion species is disposed on the downstream side (Z direction side) of the mass separation magnet 3. In order to pass through (4), the intensity of the magnetic field B in the mass separation magnet 3 is adjusted.

The ion beam 1 passing through the analysis slit 4 is introduced into the process chamber 5. At this time, the dimension of the longitudinal direction of the ion beam 1 is set to become longer than the dimension of the board | substrate 6 (for example, a glass substrate, a silicon wafer, etc.) in the same direction. Subsequently, the substrate 6 disposed in the processing chamber 5 is reciprocally driven by a drive mechanism (not shown) along the direction of arrow A, and ion implantation treatment is performed on the entire surface of the substrate 6.

In the present invention, as shown in FIG. 2A, the traveling direction of the ion beam 1 incident on the mass separation magnet 3 is oblique to the direction of the magnetic field B generated in the mass separation magnet 3. Crossing. In other words, it can be said that the magnetic field B is generated in the mass separation magnet 3 to obliquely cross the main surface (surface located in the XZ plane) of the ion beam 1 passing through the mass separation magnet 3. . By doing so, the ion beam 1 deflects the advancing direction of the ion beam 1 in the longitudinal direction of the ion beam 1, and contains the desired ion species as the analysis slit 4 in the thickness direction of the ion beam 1. It is possible to selectively pass.

3 (A) to 3 (C) show a state when the mass separation magnet 3 is cut by the line segments C1 to C3 described in FIG. 2 (A). As shown in each drawing, the mass separation magnet 3 protrudes from the H-shaped yoke 7 and the yoke 7, and has a pair of opposedly arranged main faces of the ion beam 1 interposed therebetween. Has a stimulus (9). In the longitudinal direction of the ion beam 1, the dimensions of each magnetic pole 9 are sufficiently longer than the dimensions of the ion beam 1. The coil 8 is wound around each magnetic pole 9, and the amount of current and the direction of the current flowing to the coil 8 by using a power source (not shown) are adjusted. For this reason, the magnetic field B is produced between the magnetic poles 9 toward one direction. In addition, although the yoke shape was made into H shape here, it is not limited to this, You may make another shape. For example, a C-shaped yoke may be used.

In the case of this example, at each location in the longitudinal direction (X direction) of the ion beam 1, the length of the trajectory of the ion beam 1 passing through the mass separation magnet 3 is substantially the same. For example, the trajectory of the ion beam 1 passing through the point P1 and the point P3 of the mass separation magnet 3 of FIG. 2B, and the length of the trajectory of the ion beam 1 passing through the point P2 and the point P4. Comparing is generally the same. Here, the trajectories at both ends of the ion beam 1 are exemplified, but for example, in the mass separation magnet 3, the length of the trajectory at the center in the longitudinal direction of the ion beam 1 is also determined by the trajectory at both ends. It is almost equal to the length.

Therefore, focusing on the ion beam containing the ionic species having the same mass after passing through the mass separation magnet 3, the position in the direction of the magnetic field B is substantially the same over the X direction. This will be described later with reference to FIG. 4D. In addition, each axis of the X-axis, Y-axis, and Z-axis shown in FIG. 2 (B) corresponds to the ion beam 1 passing between the ion source 2 and the mass separation magnet 3, and other places are referred to as the ion beam 1 In the case of passing through), the direction of each axis changes according to the location. About the point where the direction of each axis changes suitably in a beam path, it is the same also about FIG. 4 (B), FIG. 5 (A), FIG. 8 (A)-FIG. 8 (C), and FIG. 9 (B) which are mentioned later. Can be.

The ion beam 1 proceeds in a direction intersecting obliquely with respect to the direction of the magnetic field B. Therefore, as the ion beam 1 advances the beam path in FIGS. 3A to 3C, the position of the ion beam 1 flying between the magnetic poles 9 is one magnetic pole 9 (shown in FIG. 3). It is changing from the ground right pole 9 to the other pole 9 (ground left pole 9 shown). In addition, the distance between the magnetic poles 9 constituting the mass separation magnet 3 is constant along the Z direction, and the traveling direction of the ion beam 1 is determined by the magnetic field B generated between the magnetic poles 9. Deflected in the longitudinal direction. Therefore, the traveling direction of the ion beam 1 passing through the mass separation magnet 3 is roughly changed toward the upper left side of the page in FIG. 3.

4 (A) to 4 (D) are explanatory views of the mass separation of the ion beam 1 by the mass separation magnet 3 and the analysis slit 4 described in FIGS. 2A and 2B. to be. The ion beam 1 having a substantially parallel longitudinal direction incident on the mass separation magnet 3 proceeds in a direction intersecting with the direction of the magnetic field B generated in the mass separation magnet 3. This ion beam 1 can be divided into a component Z _B parallel to the direction of the magnetic field B and a component Z _B 수직 perpendicular to the direction of the magnetic field B, as described with reference to FIG. 4A.

Z _B , a component parallel to the direction of the magnetic field B, is not subjected to the deflection action by the magnetic field B. On the other hand, Z _B 인 which is a component perpendicular to the direction of the magnetic field _B is subjected to a deflection action by the magnetic field, and if the charge of the ion beam 1 is positive, a Lorentz force is generated toward the front of the ground. By the Lorentz force, the traveling direction of the ion beam 1 is deflected in the longitudinal direction of the ion beam 1.

4B shows the trajectories at both ends in the longitudinal direction of the ion beam 1 traveling inside the mass separation magnet 3. The ion beam 1 incident on the mass separation magnet 3 contains a desired ion species, an ion species having a lighter mass, and an ion species having a heavier mass. Here, the trajectory of each ion beam including each ion species is shown separated in the mass separation magnet 3.

In FIG. 4B, the solid line is the trajectory IBd of the ion beam 1 containing the desired ion species, and the broken line is the trajectory IBh of the ion beam 1 containing the ion species having a heavier mass than the desired ion species. And the dashed-dotted line is the trajectory IBl of the ion beam 1 containing the ionic species whose mass is lighter than the desired ionic species.

If the energy of the ion beam 1 is the same, the deflection amount of the ion beam 1 in the mass separation magnet 3 (here, the amount in which the traveling direction of the ion beam 1 bends in the longitudinal direction of the ion beam 1) is generally ion. Depends on the mass of the species. Therefore, the deflection amount is small for the ion beam 1 containing the ionic species of heavy mass, and the deflection amount is large for the ion beam 1 containing the ionic species of light mass. If the deflection amount is different, as shown in Fig. 4B, a difference occurs in the trajectory of each ion beam including each ion species passing through the mass separation magnet 3. 4 (B), X, Y, and Z axes are drawn at a position where the ion beam 1 is ejected from the mass separation magnet 3. This is because the desired ion species after passing through the mass separation magnet 3 And is for the ion beam 1.

In Fig. 4C, the trajectories of the ion beams 1 containing the respective ion species are shown. In this figure, the vertical axis represents the position in the direction of the magnetic field B, and the horizontal axis represents the position on the beam path. In addition, the origin of this figure is the entrance of the mass separation magnet 3 (the place where the ion beam 1 enters the mass separation magnet 3), and similarly to FIG. 4 (B), the trajectory of the ion beam containing the desired ion species. Is indicated by a solid line, the trajectory of the ion beam 1 containing the ion species having a lighter weight than the desired ion species is indicated by a dashed-dotted line, and the trajectory of the ion beam 1 containing the ion species having a heavier mass than the desired ion species is shown. It is indicated by a broken line. On the other hand, the ion beam 1 incident on the mass separation magnet 3 is located between the magnetic poles 9. Therefore, in the origin of FIG. 4C, the position in the direction of the magnetic field B is based on the position between the magnetic poles 9 into which the ion beam 1 is incident. The origin here does not mean that the position in the direction of the magnetic field B is zero, that is, the ion beam 1 is located on the magnetic pole 9.

As shown in Fig. 4C, when the positions in the direction of the magnetic field B are compared at the same positions on the beam path, the trajectories of the respective ion beams 1 containing ionic species having different masses are different. This difference is explained. As can be seen with reference to FIG. 4 (B), the distance (the length of IBl in the mass separation magnet 3) passing through the mass separation magnet 3 inside the ion beam containing a light mass of ionic species is desired. Ion beam 1 containing a heavier species having a heavier mass than the distance passing through the mass separation magnet 3 inside the ion beam 1 including the species (the length of IBd in the mass separation magnet 3) The distance passing through the mass separation magnet 3 inside the length (the length of IBh in the mass separation magnet 3) is the distance passing through the mass separation magnet 3 inside the ion beam 1 containing the desired ion species ( Length of the IBd in the mass separation magnet 3).

As described above, the ion beam 1 travels in a direction intersecting with the direction of the magnetic field B generated in the mass separation magnet 3. Therefore, the ion beam 1 containing the light species having a lighter mass is longer than the ion beam 1 containing other mass ion species as the distance through the mass separation magnet 3 is long. The distance that goes in the direction of and the direction of socializing becomes longer. On the contrary, the ion beam 1 containing the heavier species of heavy mass has a shorter distance passing through the mass separation magnet 3, so that the magnetic beam B of the magnetic field B The distance which progresses in the direction which intersects with direction becomes short. As described in FIG. 4A, since the ion beam 1 traveling in the magnetic field B includes components in the direction of the magnetic field B, the distance that the ion beam 1 travels in the magnetic field B becomes long. The more the distance progresses toward the magnetic field B, the longer it becomes. Therefore, as shown in Fig. 4C, when compared at the same place on the beam path, there is a difference in the position in the direction of the magnetic field B of each ion beam 1 containing ion species having different masses.

In the analysis slit 4 described in FIG. 4C, an elongated slit is formed along the front direction from the back of the paper. The long longitudinal dimension (dimension in the X direction) of the slit is larger than the longitudinal dimension of the ion beam 1. Then, the length of the slit in the short longitudinal direction (the dimension in the Y direction) is set to pass only the ion beam 1 containing the desired ion species. Specifically, as shown in Fig. 4C, an ion beam 1 containing an ionic species having a lighter mass or a heavier ionic species than the desired ionic species collides with the analysis slit 4, and the desired ionic species is selected. It is comprised so that only the ion beam 1 containing may pass. On the other hand, the dimension of the slit in the short longitudinal direction is set to an appropriate dimension according to the kind of ion species to be handled and the resolution at the time of mass separation. In this way, mass separation in the present invention is achieved.

As can be seen from reference to FIG. 4C, the direction of the magnetic field B is not shown in FIG. 4D, but is substantially coincident with the Y direction. As described in FIG. 2B, in the longitudinal direction of the ion beam 1, the trajectory of the ion beam 1 passing through the mass separation magnet 3 is substantially the same. Therefore, as shown in FIG. 4 (D), in the longitudinal direction of the ion beam 1, the direction of the magnetic field B of the ion beam 1 containing the desired ion species (this figure is viewed in the Z direction, and thus the magnetic field). The direction in (B) becomes approximately Y direction). Although only the trajectories of both ends in the longitudinal direction of the ion beam 1 are shown here, the magnetic field B is also applied to the trajectory of the ion beam 1 passing through other places (for example, the central portion in the longitudinal direction). The position in the direction is about the same.

In addition, in the longitudinal direction of the ion beam 1, the length of the track | orbit in each place of the ion beam 1 which passes inside the mass separation magnet 3 may differ. In that case, taking the trajectories at both ends in the longitudinal direction of the ion beam 1 as an example, the position in the direction of the magnetic field B is lower than the trajectory passing through one end of the trajectory passing through the other end, or It becomes high. When the position difference in the direction of the magnetic field B becomes large, there exists a possibility that a difference may arise in the characteristic of the ion beam 1 in the longitudinal direction of the ion beam 1. However, as long as the characteristics of the semiconductor device manufactured on the ion implanted substrate 6 become almost uniform, the difference in characteristics in the longitudinal direction of the ion beam 1 is not a problem at all. Therefore, you may comprise the mass separation magnet 3 so that the track | orbit length in each place in the longitudinal direction of the ion beam 1 may differ suitably within the range to which the characteristic deviation of a semiconductor device is permissible.

In addition, in order to correct the characteristic variation in the longitudinal direction of the ion beam 1 generated in the mass separation magnet 3, the ion beam (2) from the ion source 2 to the substrate 6 to which the ion beam 1 is irradiated. It is conceivable that the trajectory of the ion beam 1 passing through each place in the longitudinal direction of 1) does not cause a difference in the direction of the magnetic field B. For this, for example, the substrate 6 may be driven while tilting, or the arrangement of each member may be appropriately set so as to correct the track difference in the direction of the magnetic field B.

5 (A) and 5 (B) show a state in which the trajectories at different locations in the longitudinal direction of the ion beam 1 passing through the mass separation magnet 3 are different. Except for the difference in the trajectory, since the basic configuration is the same as that described in Figs. 4A to 4D, detailed description of overlapping contents is omitted here.

5A shows an example in which the lengths of the trajectories at both ends in the longitudinal direction of the ion beam 1 traveling inside the mass separation magnet 3 are different. Specifically, the dimension of the P1-P3 curve (IBd, which is the trajectory of the ion beam connecting the points P1 and P3) is longer than the dimension of the P2-P4 curve (IBd, which is the trajectory of the ion beam connecting the points P2 and P4). . The same applies to the trajectories (IBh and IBl) drawn by other ion species of different masses, and the trajectory passing through the point P1 is longer than the trajectory passing through the point P2.

FIG. 5B shows the trajectory IBd of each ion beam 1 including the desired ion species passing through the mass separation magnet 3 in FIG. 5A passing through the analysis slit 4. It is. In Fig. 5A, the trajectories IBd, IBh, IBl of the ion beam 1 passing through the point P1 are shown on the left side of the page of Fig. 5B and the trajectory of the ion beam 1 passing through the point P2 ( IBd, IBh and IBl are shown on the right side of the page of Fig. 5B. As explained in Fig. 5A, the trajectory of the ion beam 1 passing through the point P1 is longer than the trajectory of the ion beam 1 passing through the point P2. Therefore, as shown in FIG. 5 (B), the position of the trajectory of the ion beam 1 passing through each point is different in the direction of the magnetic field B (usually, the direction upward to the surface of the paper). The same can also be said for the trajectory drawn by the ion beam 1 containing ionic species having different masses.

In the longitudinal direction of the ion beam 1, when the position of the trajectory in the direction of the magnetic field B is different, the ion beam 1 containing the other ion species having different masses from the trajectory of the ion beam 1 containing the desired ion species. The difference also occurs in the relationship between the orbits of. Specifically, in Fig. 5 (B), the interval between the trajectories IBd, IBh, IBl of the ion beam 1 including the respective ion species drawn on the right side of the page is the ion beam 1 containing each ion type drawn on the left side of the page. It becomes larger than the space | interval between orbits IBd, IBh, IBl of (). Due to such a property difference in the longitudinal direction of the ion beam 1, a difference occurs in the characteristic in the longitudinal direction of the ion beam 1 (for example, a large and small diffusion of the ion beam 1 due to the space charge effect). . However, as described above, as long as the characteristics of the semiconductor device manufactured on the substrate 6 fall within the allowable range, such a configuration may be sufficient.

In the longitudinal direction, the ion beam 1 is preferably irradiated to the substrate 6 in a substantially parallel state. When irradiated to the substrate 6 in the state where the longitudinal direction diverges or converges, the irradiation angle of the ion beam 1 with respect to the substrate 6 does not become the same in the longitudinal direction, so that the semiconductor device manufactured on the substrate 6 There is a fear of nonuniformity in the properties of. Therefore, in order to irradiate the board | substrate 6 with the ion beam 1 substantially parallel in a longitudinal direction, the method of having the edge shape of the pole 9 is comprised as follows.

6 (A) and 6 (B) are explanatory views of the end configuration of the magnetic pole 9. As shown in Fig. 6A, a case may be considered in which the ion beam 1 having substantially parallel longitudinal directions enters the semicircular mass separation magnet 3. In this mass separation magnet 3, the magnetic field B is generated from the rear of the ground to the front. In addition, the shape of the magnetic pole 9 is shown by the broken line, for convenience here the inlet end surface and the outlet side cross section of the mass separation magnet 3 are shown to coincide with the cross section of the magnetic pole 9. However, since the magnetic pole 9 is actually arranged in the inner region of the mass separation magnet 3, the cross sections do not coincide. On the other hand, as shown in the plane, the ion beam 1 appears to be traveling in a direction perpendicular to the direction of the magnetic field B, but it is not. In the case of this example as well, the ion beam 1 is traveling in an oblique direction with respect to the direction of the magnetic field B occurring forward from the rear of the page toward the front, similarly to the configuration of the above-described embodiment.

As shown in this figure, when the ion beam 1 substantially parallel in the longitudinal direction is deflected in a semicircular shape, the ion beam 1 which is substantially parallel in the longitudinal direction can be ejected from the mass separation magnet 3. In this case, however, the dimension of the mass separation magnet 3 should be made larger than that of the conventional mass separation magnet. As such, this configuration is not practical.

Therefore, in order to reduce the size of the mass separation magnet 3, in the present invention, the end of the magnetic pole 9 is closer to the inlet side of the mass separation magnet 3 than the focal position F where the trajectory of the ion beam 1 converges in the longitudinal direction. It is configured to be located. The traveling direction of the ion beam 1 emitted from the mass separation magnet 3 becomes the direction of the tangent drawn on the trajectory of the ion beam 1 passing near the exit of the mass separation magnet 3. Therefore, in the present invention, the tangent line is formed on the trajectory of the ion beam 1 passing through two or more places in the longitudinal direction of the ion beam 1 while being at the entrance side of the mass separation magnet 3 than the focal position F. It is comprised so that the edge part of the pole 9 may be arrange | positioned on the line which connected this substantially parallel place.

More specifically, the tangential line formed on the trajectory of the ion beam 1 passing through the left side of the paper in the longitudinal direction of the ion beam 1 is defined as L1, and the right side of the paper shown in the longitudinal direction of the ion beam 1 is defined as The tangent line on the trajectory of the passing ion beam 1 is defined as L2. Then, the ends of the magnetic pole 9 are arranged on the line U-U connecting the point P3 and the point P4 where the two tangent lines are substantially parallel. Here, the tangent lines drawn on the tracks passing through both ends thereof in the longitudinal direction of the ion beam 1 have been described as an example, but of course, the tangents drawn on the tracks of the ion beams 1 passing through other places may be used.

6 (B) shows a mass separation magnet 3 created on the basis of the construction method of the ends of the magnetic pole 9 described with reference to FIG. 6A. In this way, if the end shape of the magnetic pole 9 is comprised, it becomes possible not only to make the dimension of the mass separation magnet 3 small, but also to eject the substantially parallel ion beam 1 from the mass separation magnet 3. In this case, however, the dimension in the longitudinal direction of the ion beam 1 was W1 when incident on the mass separation magnet 3, whereas W2 was smaller than W1 when exiting from the mass separation magnet 3. Therefore, when the dimension of the board | substrate 6 is large, W1 must be made large enough.

In order to improve that the dimension of the longitudinal direction of the ion beam 1 is reduced by passing through the mass separation magnet 3, the structure shown in FIG. 6 (C) can be considered. In this example, the traveling direction of the ion beam 1 passing through the mass separation magnet 3 is reversed to that in Fig. 6B. In addition, the magnetic field (B) is generated toward the rear in front of the ground. With such a configuration, the dimension in the longitudinal direction of the ion beam 1 in the mass separation magnet 3 can be enlarged. On the other hand, as described above in this example, the end of the magnetic pole 9 provided on the outlet side of the mass separation magnet 3 has a line connecting the point P1 and the point P2 where the tangents drawn on the trajectory of the ion beam 1 are substantially parallel. It can be seen that it is arranged in.

In FIGS. 7A to 7D, the ion beam 1 generated from the ion source 2 assumes the ion beam 1 described in FIG. 1B. As shown in FIG. 6 (A), FIG. 7 (A) shows the trajectory of the ion beam 1 passing through the semicircular mass separation magnet 3. Since the concepts such as the tangent to the trajectory of the mass separation magnet 3 and the ion beam 1 are the same as those described with reference to FIG. 6 (A), the detailed description is omitted here and simply described.

As in the example of Fig. 6A, the point P1 and the point P2, which are positions where the tangent L1 and the tangent L2 drawn on the trajectory of the ion beam 1 passing through the mass separation magnet 3, are approximately parallel to each other, are connected. The end of the pole 9 is arranged on the line UU.

As a result, a mass separation magnet 3 shown in Fig. 7B is produced. While the length of the ion beam 1 in the longitudinal direction is W3 at the time of incidence, the ion beam having the size of W4 larger than that at the time of injection is obtained. You can zoom in to 1).

Conversely, as shown in Fig. 7C, the traveling direction of the ion beam 1 may be reversed from the example of Fig. 7B to narrow the length of the ion beam 1 in the longitudinal direction. This is because, if the size of the substrate 6 is small, it is not necessary to increase the width in the longitudinal direction of the ion beam 1 so much. In addition, in order to perform ion implantation to the substrate 6 in a short time, a method of increasing the amount of beam current per unit area of the ion beam 1 can be considered. In this case, by using the configuration shown in Fig. 7C, the length of the ion beam 1 in the longitudinal direction may be narrowed to increase the beam current amount. Of course, the beam current amount may be increased by using the configuration shown in Fig. 6B described above.

As described above, in order to change the length in the longitudinal direction of the ion beam 1 emitted from the mass separation magnet 3, the ion source 2 originally provided is generated with the ion beam 1 having a different length in the longitudinal direction. It is conceivable to reduce the size of the ion beam 1 incident on the mass separation magnet 3 by changing the ion source 2 to another ion source 2 or the like. Similarly, even if the arrangement of the mass separation magnet 3 is changed, the dimension in the longitudinal direction of the ion beam 1 emitted from the mass separation magnet 3 can be narrowed or widened.

7D shows an example in which the dimension of the longitudinal direction of the ion beam 1 is enlarged by changing the arrangement of the mass separation magnets 3. FIG. 7 (D) shows the configuration when the mass separation magnet 3 described in FIG. 7B is rotated at an angle θ1 around the point P2. In this case, the trajectory of the ion beam 1 passing through the mass separation magnet 3 becomes different from that shown in the example of Fig. 7B. Specifically, the trajectory of the ion beam 1 passing through the end of the left side of the page becomes wider outward by the angle θ2 as compared with the example of FIG. 7B. Therefore, the ion beam 1 having the dimension of W5 larger than W4 can be ejected from the mass separation magnet 3.

On the other hand, in the example of FIG. 7D, the ion beam 1 diverging from the mass separation magnet 3 in the longitudinal direction is emitted. If the degree of divergence is to some extent, the ion beam 1 is directed to the substrate 6. It is not a problem if investigated. This is because even if the characteristics of the semiconductor device manufactured on the substrate 6 fall within the allowable range, the ion beam 1 emitting in the longitudinal direction is not a problem.

Instead of the ion implantation apparatus IM illustrated in Figs. 2A and 2B, the ion implantation apparatus IM shown in Figs. 8A to 8C may be used.

In the ion implantation apparatus IM of FIG. 8A, a pair of electrostatic deflection electrodes 10 are disposed between the ion source 2 and the mass separation magnet 3. In the example of FIG. 2A, the ion beam 1 is moved from the ion source 2 in an oblique direction with respect to the direction of the magnetic field B generated between the pair of magnetic poles 9 of the mass separation magnet 3. Had been injected. In contrast, in the example of FIG. 8A, the ion beam 1 is moved from the ion source 2 in a direction orthogonal to the direction of the magnetic field B generated between the pair of magnetic poles 9 of the mass separation magnet 3. Is injected. The traveling direction of the ion beam 1 is deflected in the thickness direction of the ion beam 1 by the electrostatic deflection electrode 10 so as to be oblique to the direction of the magnetic field B.

In this example, the ion beam 1 is an ion beam having a positive charge. In addition, each electrostatic deflection electrode 10 has a length longer than that of the ion beam 1 in the longitudinal direction of the ion beam 1, and is disposed to face each other with the main surface of the ion beam 1 interposed therebetween. A power source (not shown) is connected to each electrostatic deflection electrode 10. As shown in the drawing, a negative voltage is applied to an electrode disposed above the ground, and a positive voltage is applied to an electrode disposed below the ground. Voltage is being applied. By using such a configuration, the ion beam 1 having a positive charge can be deflected toward the electrode on the upper side of the ground to which a negative voltage is applied.

The voltage of the power supply may be fixed, but it is preferable to allow the setting to be changed to be variable. In this case, even if some errors occur in the arrangement of the ion source 2 or the mass separation magnet 3, the error can be corrected by changing the value of the voltage applied to the electrostatic deflection electrode 10.

In FIG. 8A, the electrostatic deflection electrode 10 is disposed between the ion source 2 and the mass separation magnet 3, but as shown in FIG. 8B, the electrostatic deflection electrode 10 may be disposed in the mass separation magnet 3. . If the electrostatic deflection electrode 10 is made of heavy metal, if it is sputtered by the ion beam 1 and mixed in the substrate 6, there is a possibility of causing a manufacturing defect of a semiconductor device. Therefore, a method of forming the electrostatic deflection electrode 10 from carbon or a method of forming the silicon if the substrate 6 is a silicon wafer can be considered. In addition, when the pair of electrostatic deflection electrodes 10 are disposed in the magnetic field B, the direction of the electric field E generated between the electrostatic deflection electrodes 10 should be parallel to the direction of the magnetic field B. desirable. By using such a configuration, the deflection action due to E × B drift can not be generated for the ion beam 1 passing through the mass separation magnet 3.

In order to bend the ion beam 1 in the thickness direction of the ion beam 1, the method of arranging the 2nd electrostatic deflection electrode 11 between the mass separation magnet 3 and the process chamber 5 can be considered. This example is shown in Fig. 8C. The same configuration is adopted for the electrostatic deflection electrode 10 and the second electrostatic deflection electrode 11 except that the polarities of the voltages applied to the electrodes disposed with the main surface of the ion beam 1 interposed therebetween are reversed. By using such a structure, the irradiation angle in the thickness direction of the ion beam 1 irradiated to the substrate 6 can be adjusted.

Alternatively, the ion implantation apparatus IM shown in Figs. 9A and 9B may be used. As shown in Fig. 9A, in this example, a small deflection electromagnet 12 is disposed between the ion source 2 and the mass separation magnet 3. This point differs from the examples of FIGS. 2A and 2B. The deflection electromagnet 12 has a pair of magnetic poles 13 opposed to each other with the main surface of the ion beam 1 interposed therebetween, and the direction of the magnetic field B generated between the magnetic poles 13 is the ion source 2. It is orthogonal to the advancing direction of the ion beam 1 emitted from the.

As shown in Fig. 9B, the ion beam 1 is deflected in the longitudinal direction by the deflecting electromagnet 12. By this deflection action, since the dimension of the longitudinal direction of the ion beam 1 incident on the mass separation magnet 3 in the XZ plane can be changed, the longitudinal direction of the ion beam 1 emitted from the mass separation magnet 3 You can adjust the dimensions. It is also possible to improve the tolerance with respect to the member arrangement of the ion source 2 or other ion optical elements. On the other hand, the deflection electromagnet 12 may be further provided between the mass separation magnet 3 and the processing chamber 5. Then, the dimension in the advancing direction or the longitudinal direction of the ion beam 1 irradiated to the substrate 6 can be corrected.

In addition, since the relative positional relationship between the direction of the magnetic field B generated in the mass separation magnet 3 and the traveling direction of the ion beam 1 does not have to be changed, the ion beam 1 in the yoke 7 of the mass separation magnet 3 needs to be changed. The yoke of the mass separation magnet 3 is changed by changing the dimensions (distance from the yoke 7) of the pair of magnetic poles 9 protruding toward the side to be gradually shortened by one magnetic pole 9 along the Z direction. In 7), the dimension (distance from the yoke 7) of the pair of magnetic poles 9 protruding toward the ion beam 1 side is changed to be gradually longer at the other magnetic pole 9 along the Z direction. And the dimension between magnetic poles 9 is made to be constant. Then, the ion source 2 may be tilted so that the traveling direction of the ion beam 1 becomes appropriate to the shape of the magnetic pole 9.

In the above examples, for the sake of simplicity, the description of the magnetic field (fringe field) occurring at the ends of the magnetic poles 9 of the mass separation magnet 3 has been omitted. Taking this fringe field into consideration, the arrangement of the analysis slits 4 becomes a position where the dimension in the thickness direction of the ion beam 1 becomes almost minimum, as shown in Fig. 10A.

10A shows the thickness direction of the ion beam 1 when the fringe field Bf generated at the ends of the magnetic pole 9 on the inlet side and the outlet side of the ion beam 1 of the mass separation magnet 3 is considered. It is shown that the dimension of is changed.

As is known in the art, when an ion beam is obliquely incident in a direction perpendicular to the magnetic pole cross section of a dipole magnet having a pair of magnetic poles, the force of convergence or divergence acts on the ion beam by the fringe field Bf. On the other hand, although it depends on the direction of the magnetic field generated between the magnetic poles of the dipole magnets, in view of the present invention, the relationship between the direction perpendicular to the cross section of the magnetic poles and the incident direction of the ion beam is the magnetic field B generated between the magnetic poles 9. Relationship in the plane perpendicular to the direction of.

It demonstrates based on a specific example. The state in the plane perpendicular | vertical to the magnetic field B of the ion implantation apparatus IM described in FIG. 10 (A) is shown in FIG. As shown in FIG. 10 (B), the ion beam 1 is incident at an angle θ3 with respect to the direction P ′ perpendicular to the cross section of the magnetic pole 9 on the inlet side where the ion beam 1 is incident. At this time, since the direction of the magnetic field is from the front side to the rear side, the ion beam 1 converges in the thickness direction by the fringe field Bf.

On the other hand, the ion beam 1 is emitted horizontally with respect to the direction P 'perpendicular | vertical to the cross section of the pole 9 by the exit side from which the ion beam 1 is emitted. Therefore, the convergence and divergence action to the ion beam 1 by the fringe field Bf does not work here.

As shown in Fig. 10A, at the inlet side of the mass separation magnet 3, the convergence action acts in the thickness direction by the fringe field Bf. Since the convergence and divergence action by the fringe field Bf do not act on the exit side of the mass separation magnet 3, the ion beam 1 proceeds while converged in the thickness direction, and on the downstream side of the mass separation magnet 3 By connecting the focal points and placing the analysis slits 4 at this place, the ion beams containing unnecessary ionic species are separated.

Thus, if the analysis slit 4 is arrange | positioned at the focus position in the thickness direction of the ion beam 1, the dimension of the short length direction of the analysis slit 4 can be narrowed. As a result, the separation accuracy of the ion beam containing the desired ion species and the ion beam containing the other ion species can be improved. Here, an example of arranging the analysis slits 4 at the focal position has been presented, but of course, it can be expected to exhibit the same effect when disposed near the focal position. Therefore, arrangement | positioning of the analysis slit 4 does not necessarily need to arrange | position exactly in a focal position, but should just arrange | position substantially in a focal position. It is also conceivable that the focal point is not connected depending on the energy of the ion beam 1 or the effect of the space charge effect. In consideration of this, as the arrangement of the analysis slits 4, it is conceivable to arrange at the position where the dimension in the thickness direction of the ion beam 1 becomes almost minimum.

In this example, as shown in Fig. 10A, the ion beam 1 incident on the inlet side of the mass separation magnet 3 passes through the vicinity of the center between the magnetic poles 9 on the inlet side. The force in the inward direction acts equally on the ion beam 1 from the direction opposite to the direction. On the other hand, when the ion beam 1 passes through the position biased to the magnetic pole 9 arranged on the Y-direction side, only the force directed to the side opposite to the Y-direction acts on the ion beam 1. Also in this case, on the side near the magnetic pole 9 of the ion beam 1 (upper part of the surface of the ion beam 1) and the far side (lower part of the surface of the ion beam 1), the force acting toward the opposite side in the Y direction Since the size is different, the ion beam 1 converges in the thickness direction. Therefore, the position where the ion beam 1 passes between the magnetic poles 9 in the YZ plane is not limited to the vicinity of the center shown in Fig. 10 (A).

In FIG. 10B, the direction P ′ perpendicular to the cross section of the magnetic pole 9 on the outlet side of the mass separation magnet 3 and the traveling direction IB _Z of the ion beam 1 are in a horizontal relationship. Instead, the relationship between them may be oblique.

For example, the ion beam 1 is configured to be ejected such that the angle is inclined downwardly or upwardly with respect to the direction P ′ perpendicular to the cross section of the magnetic pole 9. As a result, the ion beam 1 converges further in the thickness direction by the fringe field Bf generated at the exit side of the mass separation magnet 3. This is because the ion beam 1 is biased toward one magnetic pole 9 side as shown in Fig. 10A on the exit side of the mass separation magnet 3. In this way, the ion beam 1 may be converged in the thickness direction in two steps.

In addition, in FIG. 10 (B), the traveling direction IB _Z of the ion beam 1 is made to enter from the lower side of the ground in the direction P ′ perpendicular to the cross section of the magnetic pole 9. Then, the ion beam 1 diverges in the thickness direction at the inlet side of the mass separation magnet 3. Thereafter, on the outlet side of the mass separation magnet 3, the ion beam 1 is obliquely ejected with respect to the direction P 'perpendicular to the cross section of the magnetic pole 9 as described above. At that time, by making the injection angle with respect to the direction perpendicular to the cross section of the magnetic pole 9 larger than the angle of incidence at the entrance side, the dimension in the thickness direction of the ion beam 1 before and after passing through the mass separation magnet 3 is determined. You can expect to make it smaller overall.

In addition to the above, various improvements and modifications may be made without departing from the scope of the present invention.

1 ion beam
2 ion source
3 mass separation magnet
4 analysis slits
5 treatment rooms
6 substrate
7 York
8 coil
9 stimuli
IM ion implanter

Claims (20)

An ion source for generating a long ribbon-shaped ion beam in one direction,
A pair of magnetic poles disposed downstream of the ion source, the pair of magnetic poles being opposed to each other with a main surface of the ion beam positioned in a plane defined in a longitudinal direction and a traveling direction of the ion beam; A mass separation magnet for biasing the traveling direction of the ion beam in the longitudinal direction of the ion beam by the generated magnetic field;
An analysis slit for passing an ion beam containing a desired ion species among the ion beams having passed through the mass separation magnet,
An ion implantation apparatus having a processing chamber in which a substrate to which an ion beam passing through the analysis slit is irradiated is disposed,
The direction of the magnetic field generated between the magnetic poles, the ion implantation device, characterized in that the direction crossing the main surface of the ion beam passing through the mass separation magnet obliquely. The method of claim 1,
The stimulus is in the longitudinal direction of the ion beam,
And an ion implantation device having a dimension larger than that of the ion beam. The method of claim 1,
And a distance between the pair of magnetic poles is constant within the mass separation magnet. The method of claim 1,
The magnetic pole has a dimension greater than that of the ion beam in the longitudinal direction of the ion beam,
And a distance between the pair of magnetic poles is constant within the mass separation magnet. The method of claim 1,
And the traveling direction of the ion beam generated from the ion source crosses at an angle with respect to the direction of the magnetic field generated in the mass separation magnet. The method of claim 1,
The magnetic pole has a dimension greater than that of the ion beam in the longitudinal direction of the ion beam,
And the traveling direction of the ion beam generated from the ion source crosses at an angle with respect to the direction of the magnetic field generated in the mass separation magnet. The method of claim 1,
The distance between the pair of magnetic poles is constant inside the mass separation magnet,
And the traveling direction of the ion beam generated from the ion source crosses at an angle with respect to the direction of the magnetic field generated in the mass separation magnet. The method of claim 1,
The magnetic pole has a dimension greater than that of the ion beam in the longitudinal direction of the ion beam,
The distance between the pair of magnetic poles is constant inside the mass separation magnet,
And the traveling direction of the ion beam generated from the ion source crosses at an angle with respect to the direction of the magnetic field generated in the mass separation magnet. The method of claim 1,
The traveling direction of the ion beam generated in the ion source is orthogonal to the direction of the magnetic field generated in the mass separation magnet, and the traveling direction of the ion beam is placed in the beam path between the ion source and the mass separation magnet. And a pair of electrostatic deflecting electrodes for deflecting in the thickness direction perpendicular to the main surface of said ion beam. The method of claim 1,
The magnetic pole has a dimension greater than that of the ion beam in the longitudinal direction of the ion beam,
The traveling direction of the ion beam generated in the ion source is orthogonal to the direction of the magnetic field generated in the mass separation magnet, and the traveling direction of the ion beam is placed in the beam path between the ion source and the mass separation magnet. And a pair of electrostatic deflecting electrodes for deflecting in the thickness direction perpendicular to the main surface of said ion beam. The method of claim 1,
The distance between the pair of magnetic poles is constant inside the mass separation magnet,
The traveling direction of the ion beam generated in the ion source is orthogonal to the direction of the magnetic field generated in the mass separation magnet, and the traveling direction of the ion beam is placed in the beam path between the ion source and the mass separation magnet. And a pair of electrostatic deflecting electrodes for deflecting in the thickness direction perpendicular to the main surface of said ion beam. The method of claim 1,
The magnetic pole has a dimension greater than that of the ion beam in the longitudinal direction of the ion beam,
The distance between the pair of magnetic poles is constant inside the mass separation magnet,
The traveling direction of the ion beam generated in the ion source is orthogonal to the direction of the magnetic field generated in the mass separation magnet, and the traveling direction of the ion beam is placed in the beam path between the ion source and the mass separation magnet. And a pair of electrostatic deflecting electrodes for deflecting in the thickness direction perpendicular to the main surface of said ion beam. The method of claim 1,
While the traveling direction of the ion beam generated from the ion source is perpendicular to the direction of the magnetic field generated in the mass separation magnet, the traveling direction of the ion beam in the mass separation magnet is perpendicular to the main surface of the ion beam. An ion implantation device, characterized in that a pair of electrostatic deflection electrodes are arranged to deflect in a direction. The method of claim 1,
The magnetic pole has a dimension greater than that of the ion beam in the longitudinal direction of the ion beam,
While the traveling direction of the ion beam generated from the ion source is perpendicular to the direction of the magnetic field generated in the mass separation magnet, the traveling direction of the ion beam in the mass separation magnet is perpendicular to the main surface of the ion beam. An ion implantation device, characterized in that a pair of electrostatic deflection electrodes are arranged to deflect in a direction. The method of claim 1,
The distance between the pair of magnetic poles is constant inside the mass separation magnet,
While the traveling direction of the ion beam generated from the ion source is perpendicular to the direction of the magnetic field generated in the mass separation magnet, the traveling direction of the ion beam in the mass separation magnet is perpendicular to the main surface of the ion beam. An ion implantation device, characterized in that a pair of electrostatic deflection electrodes are arranged to deflect in a direction. The method of claim 1,
The magnetic pole has a dimension greater than that of the ion beam in the longitudinal direction of the ion beam,
The distance between the pair of magnetic poles is constant inside the mass separation magnet,
While the traveling direction of the ion beam generated from the ion source is perpendicular to the direction of the magnetic field generated in the mass separation magnet, the traveling direction of the ion beam in the mass separation magnet is perpendicular to the main surface of the ion beam. An ion implantation device, characterized in that a pair of electrostatic deflection electrodes are arranged to deflect in a direction. The method of claim 1,
And a deflection electromagnet for deflecting the traveling direction of the ion beam in the longitudinal direction of the ion beam in a beam path between the ion source and the mass separation magnet. The method of claim 1,
In the mass separation magnet, the tangent lines drawn on the tracks of the plurality of ion beams passing through different locations in the length direction of the ion beam are connected to each other so as to be parallel to each other, and arranged at the outlet side of the mass separation magnet. An ion implantation device, characterized in that the end of the magnetic pole is located. The method of claim 1,
In the mass separation magnet, the ion implantation device, characterized in that the length of the trajectory of the ion beam passing through another place in the longitudinal direction of the ion beam is the same. The method of claim 1,
And the analysis slit is disposed at a position where the dimension in the thickness direction of the ion beam is minimized.

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