CN102800550A

CN102800550A - Ion implantation device

Info

Publication number: CN102800550A
Application number: CN2012100673604A
Authority: CN
Inventors: 内藤胜男; 土肥正二郎
Original assignee: NINSSIN ION EQUIPMENT CO Ltd
Current assignee: NINSSIN ION EQUIPMENT CO Ltd; Nissin Electric Co Ltd
Priority date: 2011-05-27
Filing date: 2012-03-14
Publication date: 2012-11-28
Anticipated expiration: 2032-03-14
Also published as: KR20120132318A; CN102800550B; KR101468578B1

Abstract

The invention provides an ion implantation device, comprising a quality separating magnet. Even on the condition that along with the large-scale substrate size, the size of a strip-like ion beam in the length direction is increased, compared with the prior art, the electricity consumption of the quality separating magnet is small, the magnetic field distribution between magnetic poles is uniform and the size is small. The ion implantation device comprises an ion source for generating the strip-like ion beam; the quality separating magnet possessing a pair of magnetic poles which are arranged oppositely across the main plane of the ion beam, and enabling the traveling direction of the ion beam in the length direction of the ion beam to be deflected via the magnetic field generated between the magnetic poles; an analysis slit enabling the ion beam including the hoped ion types to pass; a processing chamber equipped with a substrate and enabling the ion beam passed the analysis slit to be irradiate to the substrate. The direction of the magnetic field generated between the magnetic poles aslant crosses the main plane of the ion beam in the interior of the quality separating magnet.

Description

Ion implantation apparatus

Technical field

The present invention relates to ribbon ion beam is carried out mass separation and substrate is carried out the ion implantation apparatus that ion injects processing.

Background technology

In the past, used ribbon ion beam is carried out mass separation and substrate is carried out the ion implantation apparatus that ion injects processing.In patent documentation 1, disclose an example of said ion implantation apparatus.

The mass separation magnet that in the ion implantation apparatus of patent documentation 1, uses comprises a pair of magnetic pole; This a pair of magnetic pole disposes with the mode of clamping ribbon ion beam on the length direction of banded (or being called sheet) ion beam relatively; Said ribbon ion beam is long in one direction, and on the direction vertical with length direction, has thickness.On each magnetic pole, be wound with coil,, between magnetic pole, produce magnetic field through electric current supply is arrived this coil.Utilize this magnetic field; To make ribbon ion beam crooked on direct of travel in the mode that has curvature on the thickness direction; And locate to make ribbon ion beam on thickness direction, to restrain, thereby carry out mass separation in the separation slot (being also referred to as " analysis slit ") in the downstream that are positioned at mass separation magnet.

Patent documentation 1: the open communique spy of Japan Patent open 2008-243765 number (the 0021st～0022 section, Fig. 2)

These several years, the size of the length direction of ribbon ion beam was elongated corresponding to the maximization of substrate size.Under the situation of the such large substrate of glass substrate, use length direction to be of a size of the ion beam that 600mm～900mm degree, thickness direction are of a size of 30mm～100mm degree.In addition; Even substrate is the less semiconductor substrate as silicon chip; The diameter dimension of the large substrate of the standard of being used as is also reached 450mm, needing therefore can to expect using length direction to be of a size of the ion beam that 500mm degree, thickness direction are of a size of 20mm～50mm degree.

Distance between a pair of magnetic pole that is provided with in the mass separation magnet in being documented in patent documentation 1 is set to bigger than the size of the length direction of ribbon ion beam.Under the situation of large substrate being carried out the ion injection, the size of the length direction of employed ion beam is very big, therefore must the distance between the magnetic pole be expanded to than bigger in the past degree.

Usually, the magnetic field in the mass separation magnet is designed to become uniform Distribution of Magnetic Field along the whole zone of carrying out the ion beam of mass separation with desirable intensity.To equate substantially in order making, thereby to carry out mass separation, must become described uniform Distribution of Magnetic Field with good precision by the whole zone of the amount of deflection of the ion beam of mass separation along ion beam.

But under the situation that the distance between the magnetic pole has enlarged, Distribution of Magnetic Field produces inhomogeneous on the length direction of ribbon ion beam.Distance between the magnetic pole is wide more, and the magnetic line of force that between the magnetic pole that is oppositely arranged, produces is more crooked at the edge part of magnetic pole.Its result, the magnetic flux density of the central portion between the magnetic pole that is oppositely arranged relatively become thin, and it is close that near the magnetic flux density magnetic pole relatively becomes.Receive this influence, the amount of deflection through the ribbon ion beam between the magnetic pole also produces difference.Specifically, the amount of deflection of the ribbon ion beam through the central portion between the magnetic pole is less than the amount of deflection through near the ribbon ion beam the magnetic pole, and the shape of ion beam produces distortion in the longitudinal direction.Be oppositely arranged on the length direction of ribbon ion beam owing to constitute a pair of magnetic pole of the mass separation magnet of patent documentation 1, therefore the amount of deflection of the length direction of said ribbon ion beam demonstrates bigger difference, is difficult to carry out the good mass separation of precision.

On the other hand; Mass separation magnet to record in patent documentation 1; In order to improve the uneven magnetic flux distribution that between magnetic pole, produces, can consider so that enough big and make ribbon ion beam constitute mass separation magnet, still through near the mode the central portion of magnetic pole in the pole dimension on the thickness direction of ribbon ion beam; In this case, the size of mass separation magnet can become very big.

In addition, follow the distance between the magnetic pole to enlarge the weakened in the magnetic field that between this magnetic pole, produces.Because the weakened in magnetic field, and on the other hand when ion beam quality is separated needed amount of deflection do not change, so must increase the magnitude of current that flows through the coil on each magnetic pole that is wound in mass separation magnet, make the magnetic field intensity enhancing.In this case, follow the increase of the magnitude of current, cause the power consumption quantitative change of mass separation magnet big.

Summary of the invention

The object of the present invention is to provide a kind of ion implantation apparatus; This ion implantation apparatus comprises mass separation magnet; Even following the maximization of substrate size; Under the situation that the size of the length direction of ribbon ion beam increases, with compared with techniques in the past, the size of even, the said mass separation magnet of the Distribution of Magnetic Field between the magnetic pole of said mass separation magnet is little and power consumption said mass separation magnet is also little.

That is, the present invention provides a kind of ion implantation apparatus, it is characterized in that comprising: ion source is created on ribbon ion beam long on the direction; Mass separation magnet; Be configured in said ionogenic downstream; Have a pair of magnetic pole, this a pair of magnetic pole is oppositely arranged across the primary flat of said ion beam, and the primary flat of said ion beam is positioned at the plane by the length direction of said ion beam and direct of travel definition; Through the magnetic field that between said magnetic pole, produces, make the length direction upper deflecting of the direct of travel of said ion beam at said ion beam; Analyze slit, make through ion beam in the ion beam behind the said mass separation magnet, that comprise desirable ionic species and pass through; And process chamber, dispose substrate, to said substrate, wherein, the direction in the magnetic field that between said magnetic pole, produces is crossed the primary flat through the inner said ion beam of said mass separation magnet obliquely through the ion beam irradiation behind the said analysis slit.

Owing to carry out mass separation at the length direction upper deflecting of ion beam, so can be across the primary flat of the ion beam magnetic pole of configuration quality discrete magnets relatively through the direct of travel that makes ribbon ion beam.Therefore, dispose the structure in the past of magnetic pole with mode and compare, can make the distance between the magnetic pole become very little distance with clamping ribbon ion beam in the longitudinal direction.Its result can improve the uniformity of the Distribution of Magnetic Field that between magnetic pole, produces.In addition, owing to having good uniformity of Distribution of Magnetic Field, so can increase pole dimension in order to alleviate the inhomogeneous of Distribution of Magnetic Field.Therefore, the situation that forms uniform Distribution of Magnetic Field with structure through is in the past compared, and can make the size decreases of mass separation magnet.In addition, because the distance between the magnetic pole is little, so the intensity in the magnetic field that between magnetic pole, produces is enough strong.Therefore; Need not compensate for the situation that causes magnetic field intensity to die down to the expansion of following the distance between the magnetic pole; And as mass separation magnet in the past, increase and flow through the magnitude of current that is wound in the coil on the magnetic pole, so can reduce the power consumption of mass separation magnet accordingly.

In addition; In the past the direct of travel through making ribbon ion beam in the longitudinal direction deflection carry out under the situation of mass separation, in the longitudinal direction the ribbon ion beam that comprises desirable ionic species is separated with the ribbon ion beam of ionic species beyond comprising desirable ionic species.In this case; Must increase the size of mass separation magnet; Perhaps strengthen the magnetic field that produces in the inside of this magnet, must make the ribbon ion beam that comprises desirable ionic species very big with the difference of the amount of deflection of the ribbon ion beam that comprises the ionic species beyond the desirable ionic species.Relative therewith; In ion implantation apparatus of the present invention; The direction in the magnetic field that between magnetic pole, produces is crossed the primary flat through the ion beam of the inside of mass separation magnet obliquely, thus can with the thickness direction of the vertical ribbon ion beam of primary flat on comprise desirable ionic species and comprise the separating of ribbon ion beam of the ionic species beyond the desirable ionic species.Therefore, need not as aforesaid, make maximization of mass separation magnet or enhancing magnetic field intensity.

As the structure of mass separation magnet more specifically, the size of said magnetic pole on the length direction of said ion beam is greater than the size of said ion beam.

In addition, it is characterized in that the distance between the said a pair of magnetic pole is fixed in the inside of said mass separation magnet.

In addition, as the ion beam of injecting in the mass separation magnet, preferably, the direct of travel of the said ion beam that is generated by said ion source intersects with the direction inclination in the magnetic field that in said mass separation magnet, produces.

In addition; Structure as the beam path between ion source and the mass separation magnet; Preferably; The direct of travel of the said ion beam that is generated by said ion source is vertical with the direction in the magnetic field that in said mass separation magnet, produces; And on the beam path between said ion source and the said mass separation magnet, dispose a pair of electrostatic deflection electrodes, this a pair of electrostatic deflection electrodes makes the thickness direction upper deflecting of the direct of travel of said ion beam at said ion beam, and said thickness direction is vertical with said primary flat.

On the other hand, it is also conceivable that following structure.Promptly; Preferably; The direct of travel of the said ion beam that is generated by said ion source is vertical with the direction in the magnetic field that in said mass separation magnet, produces; And in said mass separation magnet, dispose a pair of electrostatic deflection electrodes, this a pair of electrostatic deflection electrodes makes the thickness direction upper deflecting of the direct of travel of said ion beam at said ion beam, and said thickness direction is vertical with said primary flat.

In addition, preferably, on the beam path between said ion source and the said mass separation magnet, dispose the deflection electromagnet, this deflection electromagnetism makes the length direction upper deflecting of the direct of travel of said ion beam at said ion beam.

In order to penetrate parallel substantially in the longitudinal direction ion beam through mass separation magnet; Preferably; The end of said magnetic pole that is configured in the outlet side of said mass separation magnet is positioned on the line that connects following point; Said inside at said mass separation magnet is located on the length direction of said ion beam on the track through a plurality of ion beams of diverse location, and each tangent line of the track of said a plurality of ion beams of drawing from said point is parallel substantially for each other.

In addition; For before passing through mass separation magnet and through after the mass separation magnet; On the length direction of ion beam, make the characteristic of ion beam keep identical substantially; Preferably, in the inside of said mass separation magnet, the length of the track of the said ion beam through diverse location on the length direction of said ion beam is identical substantially.

About analyzing the configuration of slit, preferably, said analysis slit is configured in the minimum substantially position of size of the thickness direction of said ion beam.If carry out such configuration, then can separate with the ion beam that comprises desirable ionic species ionic species in addition the ion beam that comprises desirable ionic species with good precision.

Even following the maximization of substrate size; Under the situation that the size of the length direction of ribbon ion beam increases; With compared with techniques in the past, the size of the employed mass separation magnet of even, the of the present invention ion implantation apparatus of the Distribution of Magnetic Field between the magnetic pole of the employed mass separation magnet of ion implantation apparatus of the present invention is little and the power consumption employed mass separation magnet of ion implantation apparatus of the present invention is little.

Description of drawings

The stereogram of the ribbon ion beam that Fig. 1 representes to use in the present invention, (A) expression length direction of Fig. 1 is parallel ribbon ion beam substantially, the ribbon ion beam that (B) expression length direction of Fig. 1 is dispersed.

Fig. 2 is the vertical view of the structure of an expression ion implantation apparatus of the present invention, the vertical view on (A) expression YZ plane of Fig. 2, the vertical view on (B) expression XZ plane of Fig. 2.

Record along the C1-C1 line, along the C2-C2 line, along the appearance in the cross section of the mass separation magnet of C3-C3 line in Fig. 3 presentation graphs 2; (A) expression of Fig. 3 is along the cutaway view of C1-C1 line; (B) expression of Fig. 3 is along the cutaway view of C2-C2 line, and (C) expression of Fig. 3 is along the cutaway view of C3-C3 line.

Fig. 4 is the key diagram of mass separation method of the present invention; Appearance under the situation of the composition that Fig. 4 (A) expression will be divided into magnetic direction through the inner ion beam of mass separation magnet and the composition of the direction vertical with magnetic field; (B) expression of Fig. 4 is through the track of the inner ion beam that comprises desirable ionic species of mass separation magnet and the track of the ion beam that comprises the ionic species beyond the desirable ionic species; (C) of Fig. 4 is illustrated in the position of each ion beam on magnetic direction, position on the beam path, and (D) expression of Fig. 4 is through analyzing the appearance that slit makes each ion beam separation of the ionic species that comprises different quality.

Fig. 5 is the key diagram through the mass separation method of length under condition of different on the length direction of ion beam of the track of the inner ion beam of mass separation magnet; (A) expression of Fig. 5 is through the track of the ion beam that comprises desirable ionic species of mass separation magnet inside and the track of the ion beam that comprises the ionic species beyond the desirable ionic species, and (B) expression of Fig. 5 is through analyzing the appearance that slit makes each ion beam separation of the ionic species that comprises different quality.

Fig. 6 is the key diagram of structure of pole end piece that is arranged at the outlet side of mass separation magnet; (A) of Fig. 6 is the key diagram of the constructive method of pole end piece; The mass separation magnet that Fig. 6 (B) expression constitutes based on (A) of Fig. 6, (C) expression of Fig. 6 make the incident direction and the appearance that penetrates when in the opposite direction through the ion beam in the mass separation magnet of (B) of Fig. 6.

Fig. 7 is the key diagram of structure of pole end piece that is arranged at the outlet side of mass separation magnet; (A) of Fig. 7 is the key diagram of the constructive method of pole end piece; (B) expression of Fig. 7 is based on the mass separation magnet of (A) formation of Fig. 7; Fig. 7 (C) expression makes the incident direction and the appearance that penetrates when in the opposite direction through the ion beam of the mass separation magnet of (B) of Fig. 7, and (D) of Fig. 7 is illustrated in the example of (B) of Fig. 7, with the appearance of mass separation magnet when a P2 rotational angle θ 1 configuration.

Fig. 8 is the variation of ion implantation apparatus of record among (B) of Fig. 2's (A), Fig. 2; Be to have the direct of travel that makes ion beam example at the ion implantation apparatus of the electrostatic deflection electrodes of the thickness direction upper deflecting of ion beam; (A) of Fig. 8 is provided with the example of the ion implantation apparatus of a pair of electrostatic deflection electrodes for the beam path between ion source and the mass separation magnet; (B) of Fig. 8 is for being provided with the example of the ion implantation apparatus of a pair of electrostatic deflection electrodes in mass separation magnet; (C) of Fig. 8 is on the basis of the structure of (A) of Fig. 8, also is provided with the example of the ion implantation apparatus of a pair of electrostatic deflection electrodes in the downstream of analyzing slit.

Fig. 9 is the variation of ion implantation apparatus of record among (B) of Fig. 2's (A), Fig. 2; Be not only to have mass separation magnet but also have the direct of travel that makes ion beam example at the ion implantation apparatus of the electromagnet of the length direction upper deflecting of ion beam; The vertical view on (A) expression YZ plane of Fig. 9, the vertical view on (B) expression XZ plane of Fig. 9.

Figure 10 is the key diagram of allocation position of the analysis slit of ion implantation apparatus of the present invention, and (A) expression ion beam of Figure 10 converges in the appearance of focus on thickness direction, the appearance of (B) expression of Figure 10 during from (A) of another viewed in plan Figure 10.

Description of reference numerals

1 ... Ion beam

2 ... Ion source

3 ... Mass separation magnet

4 ... Analyze slit

5 ... Process chamber

6 ... Substrate

7 ... Yoke

8 ... Coil

9 ... Magnetic pole

IM ... Ion implantation apparatus

Embodiment

The example of the ion beam 1 that uses in the present invention has been shown in Fig. 1 (A), Fig. 1 (B).1 expression of these ion beams cut after fly on the ion source 1 put down in writing among (B) of (A), Fig. 2 of Fig. 2 of stating and the beam path between the mass separation magnet 3 ion beam 1 time appearance.Ion beam 1 by after the ion source stated 2 generate, advance along illustrated Z-direction (being also referred to as the direct of travel of Z direction or ion beam 1 in the present invention), and the mass separation magnet of stating after injecting 3.

When the plane that the direct of travel of the ion beam 1 of record is vertical in (A) that use with Fig. 1 cuts off the ion beam 1 of record among (A) of Fig. 1; The ion beam 1 of record has the length of width W X along X-direction (being also referred to as the length direction of directions X or ion beam 1 in the present invention) among (A) of Fig. 1, has the thickness of the width W Y enough narrower than width W X along Y direction (being also referred to as the thickness direction of Y direction or ion beam 1 in the present invention).Ion beam 1 with such rectangle cross section is commonly referred to as band shape or sheet ion beam.In addition, because so the width of face of ribbon ion beam that is positioned at the XZ plane in the present invention, is called primary flat with this face that is positioned at the ribbon ion beam on XZ plane greater than the width of other face.

As an ionogenic example that generates described ion beam 1, known have a bucket type ion source.More particularly, this bucket type ion source comprises that the plasma of cuboid generates container, and this plasma generates a plurality of permanent magnets that container has generation cusped magnetic field (カスプ magnetic field); A plurality of filaments are configured in plasma along the length direction of container and generate in the container; Peristome is formed on the side of plasma generation container; And the extraction electrode system, by constituting with a plurality of electrode groups of said peristome in abutting connection with configuration.

The both ends of the length direction of the ion beam 1 of record are parallel to each other along the Z direction in (A) of Fig. 1.But in fact the both ends of the length direction of ion beam 1 are not in completely parallel state, and are in parallel substantially state.This is because ion beam 1 receives the influence of space charge effect, follows up and then disperse in the Z direction.If have the energy of ion beam 1 and the ion beam 1 of positive charge, the degree of then dispersing also changes because of the ratio that is present in the electronics in the beam path.In addition, think that the configuration error of a plurality of electrode groups of constituting the extraction electrode system also exerts an influence to the collimation of ion beam 1.Therefore, be difficult to make ion beam 1 to be in completely parallel state in the longitudinal direction.

Consider said item, in the present invention, illustrative ion beam 1 is called the parallel substantially ion beam 1 of length direction of ion beam 1 in (A) with Fig. 1, perhaps in design, is called the parallel ion beam 1 of length direction of ion beam 1.

Relative therewith, for for the ion beam 1 of record among (B) of Fig. 1, the length direction of ion beam 1 is along Z directional divergence (expansion).The width W X1 of the length direction of record advances on the Z direction because of ion beam 1 among (B) of Fig. 1, expands as width W X2, can easily understand said dispersing thus.

Even such ion beam 1 still can be identical with the ion beam 1 shown in (A) of Fig. 1, be referred to as band shape or sheet ion beam, can be used for the present invention.In addition, as an ionogenic example that generates such ion beam 1, known have Bai Nasishi (バ one a Na ス type) ion source.More particularly, this Bai Nasishi ion source comprises: the plasma of cuboid generates container; Filament is configured in said plasma and generates in the container; Peristome is formed on the side of plasma generation container; And at least one electrode, with said peristome in abutting connection with setting, have the opening of slit-shaped.In addition, even the situation of the ion beam 1 shown in Fig. 1 (B) is identical with the ion beam 1 shown in (A) of Fig. 1, because of the influence of space charge effect can produce dispersing slightly.

In Fig. 2 (A), Fig. 2 (B), described the example of ion implantation apparatus IM of the present invention.The plane of in Fig. 2 (A) and Fig. 2 (B), describing is different.In these figure, described the ion beam 1 shown in (A) of Fig. 1, still, replace therewith, also can use the ion beam 1 shown in (B) of Fig. 1.

The direction that the direction of the magnetic field B that ion beam 1 edge that is generated by ion source 2 and the inside at the mass separation magnet 3 with a pair of magnetic pole 9 produce tilts to intersect is advanced.Shown in Fig. 2 (B), inject direct of travel deflection in the longitudinal direction of the ion beam 1 in the mass separation magnet 3 owing to magnetic field B.

In the ion beam 1 that generates by ion source 2, comprise various ionic speciess; The intensity of the magnetic field B in the adjustment mass separation magnet 3 makes the analysis slit 4 in the ion beam 1 that only the comprises desirable ionic species downstream (Z direction one side) through being configured in mass separation magnet 3.

Import in the process chamber 5 through the ion beam behind the analysis slit 41.At this moment, the length direction of ion beam 1 is sized to the size greater than the substrate on the equidirectional 6 (for example glass substrate, silicon chip etc.).In addition, through the reciprocal in the direction of arrow A substrate 6 of drive arrangements in process chamber 5 of not shown driving mechanism, on whole of substrate 6, carry out ion and inject processing.

In the present invention, shown in Fig. 2 (A), the direct of travel of injecting the ion beam 1 in the mass separation magnet 3 tilts to intersect with the direction of the magnetic field B that is produced by mass separation magnet 3.In other words, produce magnetic field B with the mode of crossing the primary flat (being positioned at the face on XZ plane) through the ion beam 1 of mass separation magnet 3 obliquely at mass separation magnet 3.Through such structure, can make the length direction upper deflecting of the direct of travel of ion beam 1, and on the thickness direction of ion beam 1, the ion beam 1 that comprises desirable ionic species passed through through analyzing slit 4 at ion beam 1.

Appearance when (C) expression of (A)～Fig. 3 of Fig. 3 is cut off mass separation magnet 3 with the line segment C1-C1 that puts down in writing in Fig. 2 (A)～C3-C3.Shown in each figure, mass separation magnet 3 comprises the yoke 7 and a pair of magnetic pole 9 of H shape, and this a pair of magnetic pole 9 is outstanding from said yoke 7, is oppositely arranged across the primary flat of ion beam 1.On the length direction of ion beam 1, the size of each magnetic pole 9 is fully greater than the size of ion beam 1.In addition, on each magnetic pole 9, be wound with coil 8, use not shown power supply, the magnitude of current and the sense of current of coil 8 flow through in adjustment.Thus, generation magnetic field B facing one direction between magnetic pole 9.In addition,, make yoke be shaped as H shape, but be not limited thereto, also can make yoke be shaped as other shape, for example, also can use the yoke of C shape at this.

Under the situation of this example, in each position of the length direction (directions X) of ion beam 1, the length of the track of the ion beam 1 of the inside through mass separation magnet 3 equates substantially.If enumerate concrete example, then under the situation that the track of the some P1 of the mass separation magnet 3 of (B) through Fig. 2 and the ion beam 1 of some P3 and length through a P2 and the track of the ion beam 1 of some P4 are compared, their are identical substantially.At this, given an example at the track at the both ends of mass separation magnet 1, still, for example in mass separation magnet 3, also equate substantially with length at the track at both ends in the length of the track of the central portion of the length direction of ion beam 1.

Therefore, if be conceived to, then identical substantially along the position of directions X on the direction of magnetic field B through ion beam after the mass separation magnet 3, that comprise ionic species with same quality.This will be narrated with reference to (D) of Fig. 4 in the back.In addition, each of the X axle of record among (B) of Fig. 2, Y axle, Z axle is with corresponding through the ion beam 1 between ion source 2 and the mass separation magnet 3, and through under the situation of other position, the direction of each is taken the circumstances into consideration change corresponding to the position at ion beam 1.On beam path, take the circumstances into consideration to change this point about the direction of each, after also be identical among (B) of (C), Fig. 9 of (A)～Fig. 8 of (A), Fig. 8 of (B), Fig. 5 of Fig. 4 of stating.

The direction that the direction of ion beam 1 edge and magnetic field B tilts to intersect is advanced.Therefore; In (C) of (A)～Fig. 3 of Fig. 3; Follow ion beam 1 on beam path, to advance, the position of the ion beam 1 of flight changes towards another magnetic pole 9 (magnetic pole 9 in illustrated paper left side) from a magnetic pole 9 (magnetic pole 9 on illustrated paper right side) between magnetic pole 9.In addition, the distance between the magnetic pole 9 of formation mass separation magnet 3 is certain along the Z direction, makes the length direction upper deflecting of the direct of travel of ion beam 1 at ion beam 1 through the magnetic field B that between magnetic pole 9, produces.Therefore, the direct of travel of the ion beam 1 of the inside through mass separation magnet 3 roughly changes towards the paper upper left side of Fig. 3.

(D) of (A)～Fig. 4 of Fig. 4 is (A) and (B) the middle mass separation magnet put down in writing 3 of Fig. 2 and the key diagram that 4 pairs of ion beams of analysis slit 1 carry out mass separation through Fig. 2.Inject the substantially parallel ion beam 1 of length direction in the mass separation magnet 3 towards advancing with the direction of the direction oblique of the magnetic field B of generation mass separation magnet 3 in.Shown in Fig. 4 (A), can this ion beam 1 be divided into the composition Z parallel with the direction of magnetic field B _BWith the composition Z vertical with the direction of magnetic field B _{B ⊥}

Composition Z as the composition parallel with the direction of magnetic field B _BDo not receive the deflecting action of magnetic field B.On the other hand, as the composition Z of the composition vertical with the direction of magnetic field B _{B ⊥}Receive the deflecting action of magnetic field B, if the electric charge of ion beam 1, then produces the Lorentz force near oneself side direction towards paper for just.Because this Lorentz force, the direct of travel of ion beam 1 is at the length direction upper deflecting of ion beam 1.

(B) of Fig. 4 is illustrated in the track at both ends of the length direction of the ion beam 1 of the inside of mass separation magnet 3 advancing.The ion beam 1 of injecting mass separation magnet 3 comprises desirable ionic species, quality less than the ionic species of desirable ionic species and the quality ionic species greater than desirable ionic species.At this, show the appearance that the track of each ion beam that comprises each ionic species separates in mass separation magnet 3.

In (B) of Fig. 4, solid line is the track IBd that comprises the ion beam 1 of desirable ionic species, and dotted line is to comprise the track IBh of quality greater than the ion beam 1 of the ionic species of desirable ionic species.In addition, single-point is scribed ss and comprises the track IBI of quality less than the ion beam 1 of the ionic species of desirable ionic species.

If the energy of ion beam 1 is identical, then the amount of deflection (this, the amount of the direct of travel of ion beam 1 on the length direction of ion beam 1 bending) of ion beam 1 in mass separation magnet 3 depends on the quality of ionic species substantially.Therefore, if comprise the ion beam 1 of the big ionic species of quality, then its amount of deflection is little, if comprise the ion beam 1 of the little ionic species of quality, then its amount of deflection is big.If amount of deflection is different, then shown in Fig. 4 (B), the track through inner each ion beam that comprises each ionic species of mass separation magnet 3 produces different.In addition, in (B) of Fig. 4, from the position that mass separation magnet 3 penetrates, represented X axle, Y axle, Z axle at ion beam 1, still, what this X axle, Y axle, Z axonometer were right is through the ion beam that comprises desirable ionic species 1 behind the mass separation magnet 3.

In (C) of Fig. 4, described to comprise the track of the ion beam 1 of each ionic species.In the figure, the longitudinal axis is illustrated in the position on the magnetic field B direction, and transverse axis is illustrated in the position on the beam path.In addition; The initial point of this figure is the inlet (ion beam 1 is injected the position of mass separation magnet 3) of mass separation magnet 3; Identical with Fig. 4 (B); Represent to comprise the track of the ion beam of desirable ionic species with solid line, represent to comprise the track of quality, dot and comprise the track of quality greater than the ion beam 1 of the ionic species of desirable ionic species less than the ion beam 1 of the ionic species of desirable ionic species with the single-point line.In addition, inject ion beam 1 in the mass separation magnet 3 between magnetic pole 9.Therefore, at the initial point place of Fig. 4 (C), the position between the magnetic pole of injecting with ion beam 1 in the position on the magnetic field B direction 9 is a benchmark.Initial point at this does not mean that the position on the magnetic field B direction is zero,, does not mean that ion beam 1 is positioned on the magnetic pole 9 that is.

Shown in Fig. 4 (C),, then comprise the track difference difference of the ion beam 1 of the different ionic species of quality if the same position on beam path compares the position on the magnetic field B direction.This difference is described; (B) as with reference to Fig. 4 is confirmable; Comprise the distance (length of the track IBd in mass separation magnet 3) that distance (length of the track IBl in mass separation magnet 3) that the ion beam of the little ionic species of quality passes through is passed through in mass separation magnet 3 greater than the ion beam that comprises desirable ionic species 1 in mass separation magnet 3, comprise the distance (length of the track IBd in mass separation magnet 3) that distance (length of the track IBh in mass separation magnet 3) that the ion beam of the big ionic species of quality passes through is passed through in mass separation magnet 3 less than the ion beam that comprises desirable ionic species 1 in mass separation magnet 3.

As previously mentioned, advance with the direction of the direction oblique of the magnetic field B that in mass separation magnet 3, produces in ion beam 1 edge.Therefore; The part that the distance that in mass separation magnet 3, passes through corresponding to the ion beam 1 that comprises the little ionic species of quality comes out; Compare with the ion beam 1 of the ionic species of the quality that comprises other, the ion beam 1 that comprises the little ionic species of quality with the direction of the direction oblique of magnetic field B on the distance of advancing elongated.On the contrary; The part that the distance weak point that in mass separation magnet 3, passes through corresponding to the ion beam 1 that comprises the big ionic species of quality comes out; Compare with the ion beam 1 of the ionic species of the quality that comprises other, the ion beam 1 that comprises the big ionic species of quality with the direction of the direction oblique of magnetic field B on the distance of advancing shorten.Shown in Fig. 4 (A), because the ion beam 1 of in magnetic field B, advancing comprises the composition of magnetic field B direction, so the distance that ion beam 1 is advanced in magnetic field B is long more, the distance of on the direction of magnetic field B, advancing is also long more.Therefore, shown in Fig. 4 (C), if the same position on beam path compares, the position of each ion beam 1 on the direction of magnetic field B that then comprises the different ionic species of quality produces difference.

In the analysis slit 4 of Fig. 4 (C) record, be formed with along the elongated slit of direction outwardly from the paper inboard.The size of the long side direction of this slit (size of directions X) is greater than the size of the length direction of ion beam 1.In addition, the size (size of Y direction) of the short side direction of slit is set for the ion beam 1 that comprises desirable ionic species is passed through.Specifically; Shown in Fig. 4 (C); Make quality less than the ionic species of desirable ionic species and quality greater than the ion beam 1 of the ionic species of desirable ionic species with analyze slit 4 collisions, the ion beam 1 that comprises desirable ionic species can be passed through.In addition, the resolution during according to handled ionic species and mass separation is set at appropriate size with the size of the slit of short side direction.Carry out mass separation of the present invention like this.

(C) as with reference to Fig. 4 is confirmable, at Fig. 4 (D) though in the direction of magnetic field B is not shown, the direction of magnetic field B is consistent with the Y direction substantially.Explained like (B) with reference to Fig. 2 that on the length direction of ion beam 1, the track of the ion beam 1 of the inside through mass separation magnet 3 equated substantially.Therefore, shown in Fig. 4 (D), on the length direction of ion beam 1, comprise the position of the ion beam 1 of desirable ionic species on the direction (because this figure is the figure that observes from the Z direction, so the direction of magnetic field B is the Y direction substantially) of magnetic field B and equate substantially.At this, though only show the track at both ends of the length direction of ion beam 1, also identical substantially for the position of track on the direction of magnetic field B of the ion beam 1 through other position (for example, the central portion of length direction).

On the other hand, on the length direction of ion beam 1, the ion beam 1 of the inside through mass separation magnet 3 also can be different in the length of the track of each position.In this case,, then compare the position step-down on the magnetic field B direction or uprise with track through the other end through the track of an end if be example with track at the both ends of the length direction of ion beam 1.If it is big that the difference of the position on the magnetic field B direction becomes, then have on the length direction of ion beam 1, the characteristic of ion beam 1 produces different problems.But if the characteristic that can make the semiconductor device of on the substrate 6 that carries out ion injection processing, making that is not both of said characteristic is substantially uniform degree, then the difference on ion beam 1 characteristic in the longitudinal direction is no problem fully.Therefore, also can constitute mass separation magnet 3 in the following manner, that is, said mode is: in the deviation range of the characteristic of the semiconductor device that allows, make the length of track of ion beam 1 each position in the longitudinal direction different rightly.

In addition; For in mass separation magnet 3, produce, ion beam 1 characteristic deviation in the longitudinal direction revises; Consideration is from ion source 2 to ion beam 1 substrate 6 that shone, and the track that on the length direction of ion beam 1, makes the ion beam 1 through each position does not produce difference with respect to the direction of magnetic field B.To this, for example, come the difference correction of the track on the magnetic field B direction is got final product as long as the limit makes substrate 6 inclined sides drive, perhaps set each configuration of components rightly it.

In Fig. 5 (A), Fig. 5 (B), described to make the asynchronous appearance of track of ion beam 1 each position in the longitudinal direction of the inside through mass separation magnet 3.Except the track difference, basic structure is identical with the situation that (D) with reference to (A)～Fig. 4 of Fig. 4 explained, therefore omits the detailed description to repeated content at this.

(A) of Fig. 5 is illustrated in the different example of length of track at both ends of the length direction of the ion beam 1 of the inside of mass separation magnet 3 advancing.Specifically, at this, the size of P1-P3 curve (as the track IBd of tie point P1 with the track of the ion beam of some P3) is greater than the size of P2-P4 curve (as the track IBd of tie point P2 with the track of the ion beam of putting P4).The formed track of ionic species (track IBh and track IBI) for different other of quality is also identical, and the distance of the track through a P1 is greater than the distance of the track through some P2.

The track IBd of each ion beam 1 behind the inside of passing through mass separation magnet 3 of (A) of (B) presentation graphs 5 of Fig. 5, that comprise desirable ionic species is through analyzing the appearance of slit 4.In (A) of Fig. 5, track IBd, IBh, the IBl through the ion beam behind the P1 1 is illustrated in the paper left side of Fig. 5 (B), is illustrated in the paper right side of Fig. 5 (B) through track IBd, IBh, the IBl of the ion beam behind the P2 1.Explained like (A) with reference to Fig. 5 that the distance of the track through the ion beam behind the P1 1 was longer than the distance through the track of the ion beam behind the P2 1.Therefore, shown in Fig. 5 (B), on the direction of magnetic field B (the roughly upwards direction of paper), the position of the track through the ion beam behind the each point 1 is different.In addition, for the ion beam that comprises the different ionic species of quality 1 formed track, we can say it also is same.

On the length direction of ion beam 1; Under the condition of different of the position of the track on the direction of magnetic field B, the track and the relation that comprises between the track of ion beam 1 of the ionic species beyond the different desirable ionic species of quality that comprise the ion beam 1 of desirable ionic species also produce difference.Specifically; In (B) of Fig. 5, in the difference between the track IBd of ion beam 1 shown in the paper right side, that comprise each ionic species, IBh, the IBl greater than the difference between the track IBd of ion beam 1 shown in the paper left side, that comprise each ionic species, IBh, IBl.Because the difference of ion beam 1 character in the longitudinal direction, so in the longitudinal direction characteristic of ion beam 1 (for example, the characteristic that expansion is big, expansion is little of the ion beam 1 that causes of space charge effect) produces difference.But, as previously mentioned, if be controlled on substrate 6 semiconductor device of making characteristic in the scope that can allow, even then such structure is also passable.

Preferably, ion beam 1 shines to substrate 6 with parallel substantially state in the longitudinal direction.If the state of dispersing or restraining with length direction shines on the substrate 6,, produce uneven problem so have the characteristic of the semiconductor device of on substrate 6, making then because ion beam 1 is inconsistent to the irradiating angle of substrate 6 in the longitudinal direction.Therefore, parallel ion beam 1 shines on the substrate 6 in order to incite somebody to action in the longitudinal direction substantially, considers that making the end shape of magnetic pole 9 is following shape.

(A) of Fig. 6, (B) of Fig. 6 are the key diagram of the end construction of magnetic pole 9.Shown in Fig. 6 (A), consideration length direction parallel ion beam 1 is substantially injected the situation in the semicircular mass separation magnet 3.In the inside of this mass separation magnet 3, the vertical paper of magnetic field B produces from the paper inboard toward the outer side.In addition, the shape of magnetic pole 9 is represented by dotted line, for ease, representes with the outlet side end face mode consistent with the end face of magnetic pole 9 at this entrance side end face with mass separation magnet 3.But, in fact, because magnetic pole 9 is configured in the inside region of mass separation magnet 3, so each end face is inconsistent.In addition, owing to illustrate through the plane, so look, the ion beam 1 edge direction vertical with the direction of magnetic field B advanced, but is not like this.Under the situation of this example, also the structure with aforesaid embodiment is identical, and with respect to the direction of the magnetic field B that produces toward the outer side from the paper inboard perpendicular to paper, advance with the direction of the direction oblique of this magnetic field B in ion beam 1 edge.

As shown in the drawing, the parallel ion beam 1 of cardinal principle is deflected to semicircle if make in the longitudinal direction, then can penetrate parallel substantially in the longitudinal direction ion beam 1 from mass separation magnet 3.But in this case, the size of mass separation magnet 3 must be bigger than mass separation magnet in the past.Therefore, such structure is unpractical.

Therefore, less for the size that makes mass separation magnet 3, in the present invention, make the end of magnetic pole 9 be positioned at the position that more relies on the entrance side of mass separation magnet 3 than the focal position F that track converged of in the longitudinal direction ion beam 1.The direct of travel of the ion beam 1 that penetrates from mass separation magnet 3 is the direction from the tangent line of drawing through near the track of the ion beam the outlet of mass separation magnet 31.Therefore; In the present invention; The end of magnetic pole 9 is configured in the position that more relies on the entrance side of mass separation magnet 3 than focal position F; And the allocation position of the end of magnetic pole 9 is positioned on the line that connects following position, and said connected position is located on the length direction of ion beam 1 on the track through the ion beam 1 of two above positions, and the tangent line of the track of the ion beam 1 of said two above positions of drawing from said connected position is parallel for substantially.

Specifically; To be made as tangent line L1 from the tangent line that the track of the ion beam 1 through illustrated paper left side on the length direction of ion beam 1 is drawn, will be made as tangent line L2 from the tangent line that the track of the ion beam 1 through illustrated paper right side on the length direction of ion beam 1 is drawn.In addition, the end of magnetic pole 9 is provided with on the online U-U, line U-U connects to be positioned at two tangent lines the point P3 and some P4 line of parallel position substantially.At this, be that example is illustrated with the tangent line of drawing from the track at the both ends through ion beam 1 on the length direction of ion beam 1, still, and obviously, even also passable from the tangent line of drawing through other the track of ion beam 1 of position.

The mass separation magnet 3 that the constructive method of the end of the magnetic pole of explaining according to (A) with reference to Fig. 69 is made into is illustrated among (B) of Fig. 6.If be formed as described above the end shape of magnetic pole 9, then not only can reduce the size of mass separation magnet 3, but also can penetrate parallel substantially ion beam 1 from mass separation magnet 3.But in this case, the length direction of the ion beam 1 with respect in injecting mass separation magnet 3 time is of a size of size W1, is of a size of the size W2 less than size W1 at the length direction of the ion beam 1 when mass separation magnet 3 penetrates.Therefore, under the big situation of the size of substrate 6, must make size W1 sufficiently big.

In order to improve situation, the structure shown in consideration Fig. 6 (C) owing to the dimension shrinks of the length direction that causes ion beam 1 through mass separation magnet 3.In this example, the situation of the direct of travel of the ion beam 1 through mass separation magnet 3 and (B) of Fig. 6 is opposite.In addition, produce magnetic field B perpendicular to paper towards the inboard from the paper outside.If adopt such structure, then can enlarge the size of the length direction of ion beam 1 through mass separation magnet 3.In addition, can confirm also in this example that as aforesaid, the end of magnetic pole 9 that is arranged on the outlet side of mass separation magnet 3 is configured in to connect the tangent line of drawing from the track of ion beam 1 is become on the line of parallel substantially some P1 and some P2.

In (D) of (A)～Fig. 7 of Fig. 7, the ion beam 1 that is generated by ion source 2 is assumed to ion beam 1 of record among (B) of Fig. 1.Identical with Fig. 6 (A), (A) expression of Fig. 7 is through the track of the ion beam 1 of the inside of semicircular mass separation magnet 3.Mass separation magnet 3 and to the viewpoint of the tangent line of the track of ion beam 1 etc. and (A) through Fig. 6 explained identical, so, and only describe simply in the detailed description of this omission to it.

Identical with the example of Fig. 6 (A); The end of magnetic pole 9 is disposed on the online U-U; This line U-U is tie point P1 and the line of some P2, some P1 with put P2 and be positioned at the point that the tangent line L 1 that draws from the track of the ion beam 1 of the inside through mass separation magnet 3 and tangent line L2 become the parallel position of mutual cardinal principle.

Consequently, be made into the mass separation magnet 3 shown in Fig. 7 (B), the length direction of the ion beam 1 during with respect to incident is of a size of size W3, when penetrating, can expand as the ion beam 1 that has greater than the size W4 of size W3.

Relative therewith, also can be shown in Fig. 7 (C), make the example of (B) of direct of travel and Fig. 7 of ion beam 1 opposite, the size of the length direction of ion beam 1 is narrowed down.Its reason is: if the size of substrate 6 is little, then need not make the width of length direction of ion beam 1 big for so.In addition, inject to handle, can consider to increase the beam electronic current amount of the unit are of ion beam 1 in order at short notice substrate 6 to be carried out ion.In this case, also can use the structure shown in (C) of Fig. 7, the size of the length direction of ion beam 1 is narrowed down, thereby increase the beam electronic current amount.Certainly, also can use the structure shown in (B) of Fig. 6 that the front described, increase the beam electronic current amount.

As stated, for the size of the length direction that changes the ion beam 1 that penetrates from mass separation magnet 3, can consider the ion source 2 that is provided with originally is replaced by the other ion source 2 of the different ion beam 1 of the size that generates length direction; Ion source 2 is tilted, the size of the ion beam of injecting in the mass separation magnet 31 is narrowed down or become big.Equally, even change the configuration of mass separation magnet 3, the size of the length direction of the ion beam 1 that penetrates from mass separation magnet 3 is narrowed down or become big.

Fig. 7 (D) expression enlarges the example of size of the length direction of ion beam 1 through the configuration that changes mass separation magnet 3.Fig. 7 (D) expression is the structure of center when making mass separation magnet 3 anglec of rotation θ 1 of record among (B) of Fig. 7 with a P2.In this case, the track of the ion beam 1 of the inside through mass separation magnet 3 is different from the track that the example of (B) through Fig. 7 is represented.Specifically, the track of the ion beam 1 of the end through paper left side is compared with the example of Fig. 7 (B), has enlarged angle θ 2 laterally.Thus, can have ion beam 1 from 3 ejaculations of mass separation magnet greater than the size W5 of size W4.

In addition, in the example of described Fig. 7 (D), penetrate the ion beam of dispersing in the longitudinal direction 1 from mass separation magnet 3, still, as long as the degree of dispersing is even then such ion beam 1 shines on the substrate 6, also no problem in to a certain degree.Its reason is: if can be with the Characteristics Control of the semiconductor device of on substrate 6, making in allowed limits, even the ion beam of then dispersing in the longitudinal direction 1 is also no problem.

Replace the ion implantation apparatus IM that enumerates among (B) of (A), Fig. 2 of Fig. 2, also can use the ion implantation apparatus IM of (C) of (A)～Fig. 8 of Fig. 8.

In the ion implantation apparatus IM of Fig. 8 (A), between ion source 2 and mass separation magnet 3, dispose a pair of electrostatic deflection electrodes 10.In the example of Fig. 2 (A), the direction that the direction of edge and the magnetic field B that between a pair of magnetic pole 9 of mass separation magnet 3, produces tilts makes ion beam 1 penetrate (advancing) from ion source 2.Relative therewith, in the example of Fig. 8 (A),, penetrate ion beams 1 from ion source 2 along the vertical direction of direction of the magnetic field B that between a pair of magnetic pole 9 of mass separation magnet 3, produces.In addition, through electrostatic deflection electrodes 10, the mode that tilts with the direction with magnetic field B makes the thickness direction upper deflecting of the direct of travel of ion beam 1 at ion beam 1.

In this example, ion beam 1 is for having the ion beam of positive charge.In addition, each electrostatic deflection electrodes 10 has the size greater than ion beam 1 on the length direction of ion beam 1, disposes relatively across the primary flat of ion beam 1.In addition, on each electrostatic deflection electrodes 10, be connected with not shown power supply, as illustrated, on the electrode that is disposed at the paper upside, apply the voltage of negative (-), on the electrode that is configured in the paper downside, apply the just voltage of (+).Adopt such structure, can make ion beam 1 with positive charge electrode deflection towards the paper upside that is applied with negative voltage.

Power source voltage can be fixed, and still, preferably, thereby power source voltage is variablely can set change.In this case,, also can be applied to the value of the voltage on the electrostatic deflection electrodes 10, come said error is revised through change even the configuration of ion source 2 and mass separation magnet 3 etc. has produced error slightly.

In (A) of Fig. 8, electrostatic deflection electrodes 10 is configured between ion source 2 and the mass separation magnet 3, still, also can shown in Fig. 8 (B), electrostatic deflection electrodes 10 be configured in the inside of mass separation magnet 3.If electrostatic deflection electrodes 10 is processed by heavy metal, then can receive the sputter of ion beam 1 and sneak into substrate 6, in this case, existence can cause the possibility that the manufacturing of semiconductor device is bad.Therefore, can consider to utilize carbon to process electrostatic deflection electrodes 10, perhaps when substrate 6 is silicon chip, process electrostatic deflection electrodes 10 by silicon.In addition, under the situation of a pair of electrostatic deflection electrodes 10 of the internal configurations of magnetic field B, preferably, the direction of the electric field E that between electrostatic deflection electrodes 10, produces is parallel with the direction of magnetic field B.Through adopting such structure, can be not the ion beam 1 of the inside through mass separation magnet 3 not be produced the deflecting action that E * B drift (De リ Off ト) causes.

Come for the thickness direction at ion beam 1 makes ion beam 1 replication, can consider configuration second electrostatic deflection electrodes 11 between mass separation magnet 3 and process chamber 5, this example is illustrated among (C) of Fig. 8.Except be applied to polarity across the voltage on the electrode of the primary flat of ion beam 1 configuration opposite, electrostatic deflection electrodes 10 and the identical structure of second electrostatic deflection electrodes, 11 employings.Through adopting such structure, can adjust the irradiating angle of ion beam 1 on thickness direction to substrate 6 irradiations.

In addition, also can use the ion implantation apparatus IM shown in (B) of (A), Fig. 9 of Fig. 9.Shown in Fig. 9 (A), in this example, between ion source 2 and mass separation magnet 3, dispose little deflection electromagnet 12.This point is different with the example of Fig. 2 (A), Fig. 2 (B).Deflection electromagnet 12 has a pair of magnetic pole 13 across the relative configuration of primary flat of ion beam 1, and the direction of the magnetic field B that between magnetic pole 13, produces is vertical with the direct of travel of the ion beam 1 that penetrates from ion source 2.

Shown in Fig. 9 (B), through deflection electromagnet 12, ion beam 1 deflection in the longitudinal direction.Through this deflecting action, can in the XZ plane, change the size of the length direction of injecting the ion beam 1 in the mass separation magnet 3, so can adjust the size of the length direction of the ion beam 1 that penetrates from mass separation magnet 3.In addition, can also improve the relevant nargin of component configuration with ion source 2 and other ion optics.In addition, also another deflection electromagnet 12 can be set between mass separation magnet 3 and process chamber 5.If like this, then can the subtend substrate direct of travel and the size in the longitudinal direction of ion beam 1 of 6 irradiations revise.

In addition; Because can not change the relative position of direct of travel of direction and the ion beam 1 of the magnetic field B that is produced by mass separation magnet 3 concerns just passable; So along the Z direction so that the mode that magnetic pole 9 shortens gradually change from the yoke 7 of mass separation magnet 3 size (apart from the distance of yoke 7) to the side-prominent a pair of magnetic pole 9 of ion beam 1 one, and so that the elongated gradually mode of another magnetic pole 9 change from the yoke 7 of mass separation magnet 3 size (apart from the distance of yoke 7) to the side-prominent a pair of magnetic pole 9 of ion beam 1 one.In addition, also can make the fixed size between the magnetic pole 9, and on this basis,, ion source 2 tilted so that the direct of travel of ion beam 1 becomes the mode of suitable direction according to the shape of magnetic pole 9, or the like.

In embodiment up to the present, for the purpose of simplifying the description, omitted the explanation in the magnetic field (fringing field) that the end at the magnetic pole 9 of mass separation magnet 3 is produced.If consider this fringing field, then shown in Figure 10 (A), the size that the allocation position of analysis slit 4 is positioned at the thickness direction of ion beam 1 is roughly minimum position.

(A) of Figure 10 is illustrated under the situation of the fringing field Bf that has considered to produce in the end of the magnetic pole 9 of the entrance side of the ion beam 1 of mass separation magnet 3 and outlet side, the appearance of the change in size of the thickness direction of ion beam 1.

As known in the past; With respect to the vertical direction of magnetic pole end face of the secondary magnet with a pair of magnetic pole (ダイ Port one Le マグネ Star ト); Inject obliquely under the situation of ion beam, effect has the power that makes its convergence or disperse to ion beam owing to fringing field Bf.In addition; Though it is also relevant with the direction in the magnetic field that between the magnetic pole of secondary magnet, produces; But; If edition with parallel text invention considers, the relation of the incident direction of direction vertical with the magnetic pole end face then described here and ion beam is the relation in the plane vertical with the direction of the magnetic field B of generation between magnetic pole 9.

Describe according to object lesson.The appearance on the plane that (B) expression of Figure 10 is vertical with the magnetic field B of the ion implantation apparatus IM of (A) middle record of Figure 10.Shown in this Figure 10 (B), with respect to the vertical direction P ⊥ of end face of the magnetic pole 9 of the entrance side of injecting with ion beam 1, ion beam 1 is injected with angle θ 3.At this moment, because being oriented perpendicular to paper from the paper outside towards the inboard of magnetic field, so because fringing field Bf, ion beam 1 is restrained on thickness direction.

On the other hand, with respect to the vertical direction P ⊥ of end face of the magnetic pole 9 of the outlet side that penetrates with ion beam 1, ion beam 1 flatly penetrates.Therefore, fringing field Bf does not apply convergence or disperse function to ion beam 1.

Shown in Figure 10 (A), at the entrance side of mass separation magnet 3, fringing field Bf applies astriction on thickness direction.In addition; Outlet side at mass separation magnet 3; Fringing field Bf does not apply convergence or disperse function, so ion beam 1 is advanced with the state of convergence on thickness direction, and converges in focus in the downstream of mass separation magnet 3; Through being configured in the analysis slit 4 of this position, can realize separation to the ion beam that comprises unwanted ionic species.

Like this, if will analyze the focal position that slit 4 is configured in the thickness direction of ion beam 1, the size of the short side direction of analyzing slit 4 is narrowed down.Consequently, can improve the separation accuracy that the ion beam that comprises desirable ionic species is separated with the ion beam that comprises desirable ionic species ionic species in addition.At this, though represented the example of Allocation Analysis slit 4 in the focal position,, obviously, also can expect to realize identical effect near being configured in the focal position with analyzing slit 4.Therefore, analyze slit 4 and need not just in time be configured in the focal position, be configured in the roughly position of focus as long as will analyze slit 4.In addition, exist because of the energy of ion beam 1, the influence of space charge effect, ion beam 1 does not converge in the situation of focus yet.If consider this situation, then can consider to analyze the size that slit 4 is configured in the thickness direction of ion beam 1 becomes minimum substantially position.

In this example, shown in Figure 10 (A), the ion beam 1 of entrance side of injecting mass separation magnet 3 is through near the central authorities between the magnetic pole 9 of entrance side, so from Y direction and the direction in the opposite direction with Y, ion beam 1 is applied the power that equates towards the inboard.On the other hand, ion beam 1 through situation near the position of the magnetic pole 9 that is configured in Y direction one side under, on ion beam 1 only effect have towards with the power of a Y side in the opposite direction.Even in this case; Ion beam 1 near magnetic pole 9 one sides (the paper upper portion of ion beam 1) with away from magnetic pole 9 one sides (the paper lower portion of ion beam 1); Towards with the varying in size of the power of a Y side effect in the opposite direction, so ion beam 1 is restrained on thickness direction.Therefore, in the YZ plane, ion beam 1 is not limited to through the position between the magnetic pole 9 near the central authorities shown in (A) of Figure 10.

In addition, in (B) of Figure 10, the direction P ⊥ vertical and the direct of travel IB of ion beam 1 with the end face of the magnetic pole 9 of the outlet side of mass separation magnet 3 _ZBe the relation of level, but replace therewith that this both relation also can tilt.

For example, with respect to the perpendicular direction P ⊥ of the end face of magnetic pole 9 towards paper tiltedly mode with angle of below or oblique upper penetrate ion beam 1.If like this, the fringing field Bf that then produces owing to outlet side at mass separation magnet 3, ion beam 1 is in further convergence of thickness direction.Its reason is: at the outlet side of mass separation magnet 3, shown in Figure 10 (A), ion beam 1 is near magnetic pole 9 one sides.Also can be like this, ion beam 1 is restrained with two stages on thickness direction.

In addition, in (B) of Figure 10, make the direct of travel IB of ion beam 1 _ZDirection P ⊥ with respect to vertical with the end face of magnetic pole 9 injects from the paper downside.Like this, at the entrance side of mass separation magnet 3, ion beam 1 is dispersed on thickness direction.Then, aforesaid, at the outlet side of mass separation magnet 3, ion beam 1 penetrates with respect to the direction P ⊥ vertical with the end face of magnetic pole 9 obliquely.At this moment, through making ejaculation angle with respect to the direction vertical, can expect the size of the thickness direction of ion beam 1 to be reduced on the whole in front and back through mass separation magnet 3 greater than incident angle at entrance side with the end face of magnetic pole 9.

Except described content, obviously, also can in the scope that does not break away from aim of the present invention, carry out various improvement and distortion.

Claims

1. ion implantation apparatus is characterized in that comprising:

Ion source is created on ribbon ion beam long on the direction;

Mass separation magnet; Be configured in said ionogenic downstream; Have a pair of magnetic pole, this a pair of magnetic pole is oppositely arranged across the primary flat of said ion beam, and the primary flat of said ion beam is positioned at the plane by the length direction of said ion beam and direct of travel definition; Through the magnetic field that between said magnetic pole, produces, make the length direction upper deflecting of the direct of travel of said ion beam at said ion beam;

Analyze slit, make through ion beam in the ion beam behind the said mass separation magnet, that comprise desirable ionic species and pass through; And

Process chamber disposes substrate, through the ion beam irradiation behind the said analysis slit to said substrate, wherein,

The direction in the magnetic field that between said magnetic pole, produces is crossed the primary flat through the inner said ion beam of said mass separation magnet obliquely.

2. ion implantation apparatus according to claim 1 is characterized in that, the size of said magnetic pole on the length direction of said ion beam is greater than the size of said ion beam.

3. ion implantation apparatus according to claim 1 is characterized in that, the distance between the said a pair of magnetic pole is fixed in the inside of said mass separation magnet.

4. ion implantation apparatus according to claim 1 is characterized in that,

The size of said magnetic pole on the length direction of said ion beam be greater than the size of said ion beam,

Distance between the said a pair of magnetic pole is fixed in the inside of said mass separation magnet.

5. ion implantation apparatus according to claim 1 is characterized in that, the direct of travel of the said ion beam that is generated by said ion source intersects with the direction inclination in the magnetic field that in said mass separation magnet, produces.

6. ion implantation apparatus according to claim 1 is characterized in that,

The direct of travel of the said ion beam that is generated by said ion source intersects with the direction inclination in the magnetic field that in said mass separation magnet, produces.

7. ion implantation apparatus according to claim 1 is characterized in that,

Distance between the said a pair of magnetic pole is fixed in the inside of said mass separation magnet,

8. ion implantation apparatus according to claim 1 is characterized in that,

9. ion implantation apparatus according to claim 1; It is characterized in that; The direct of travel of the said ion beam that is generated by said ion source is vertical with the direction in the magnetic field that in said mass separation magnet, produces; And on the beam path between said ion source and the said mass separation magnet, dispose a pair of electrostatic deflection electrodes, this a pair of electrostatic deflection electrodes makes the thickness direction upper deflecting of the direct of travel of said ion beam at said ion beam, and said thickness direction is vertical with said primary flat.

10. ion implantation apparatus according to claim 1 is characterized in that,

The direct of travel of the said ion beam that is generated by said ion source is vertical with the direction in the magnetic field that in said mass separation magnet, produces; And on the beam path between said ion source and the said mass separation magnet, dispose a pair of electrostatic deflection electrodes; This a pair of electrostatic deflection electrodes makes the thickness direction upper deflecting of the direct of travel of said ion beam at said ion beam, and said thickness direction is vertical with said primary flat.

11. ion implantation apparatus according to claim 1 is characterized in that,

12. ion implantation apparatus according to claim 1 is characterized in that,

13. ion implantation apparatus according to claim 1; It is characterized in that; The direct of travel of the said ion beam that is generated by said ion source is vertical with the direction in the magnetic field that in said mass separation magnet, produces; And in said mass separation magnet, dispose a pair of electrostatic deflection electrodes, this a pair of electrostatic deflection electrodes makes the thickness direction upper deflecting of the direct of travel of said ion beam at said ion beam, and said thickness direction is vertical with said primary flat.

14. ion implantation apparatus according to claim 1 is characterized in that,

The direct of travel of the said ion beam that is generated by said ion source is vertical with the direction in the magnetic field that in said mass separation magnet, produces; And in said mass separation magnet, dispose a pair of electrostatic deflection electrodes; This a pair of electrostatic deflection electrodes makes the thickness direction upper deflecting of the direct of travel of said ion beam at said ion beam, and said thickness direction is vertical with said primary flat.

15. ion implantation apparatus according to claim 1 is characterized in that,

16. ion implantation apparatus according to claim 1 is characterized in that,

17. ion implantation apparatus according to claim 1; It is characterized in that; On the beam path between said ion source and the said mass separation magnet, dispose the deflection electromagnet, this deflection electromagnetism makes the length direction upper deflecting of the direct of travel of said ion beam at said ion beam.

18. ion implantation apparatus according to claim 1; It is characterized in that; The end of said magnetic pole that is configured in the outlet side of said mass separation magnet is positioned on the line that connects following point; Said inside at said mass separation magnet is located on the length direction of said ion beam on the track through a plurality of ion beams of diverse location, and each tangent line of the track of said a plurality of ion beams of drawing from said point is parallel substantially for each other.

19. ion implantation apparatus according to claim 1 is characterized in that, in the inside of said mass separation magnet, the length of the track of the said ion beam through diverse location on the length direction of said ion beam is identical substantially.

20. ion implantation apparatus according to claim 1 is characterized in that, said analysis slit is configured in the minimum substantially position of size of the thickness direction of said ion beam.