JP2010044915A - Beam profile regulation apparatus and ion implanting device equipped with this - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To enlarge short-side direction dimension of an ion beam in intensity distribution regulation of the ion beam. <P>SOLUTION: The ion beam includes a cross-section shape perpendicular to its progressing direction. The cross-section shape has a longer length to a first direction and a shorter length to a second direction crossing to the first direction. It includes a magnet 17 for applying magnetic field to the ion beam, the magnet 17 is arranged in the vicinity of a region through which the ion beam passes, and facing the ion beam in the second direction, as well as capable of positioning regulation in the first direction. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a beam profile adjusting device that adjusts the intensity distribution of an ion beam generated from an ion source, and an ion implantation apparatus including the same.

  The ion implantation apparatus is an apparatus that implants an ion beam as an impurity (such as phosphorus P or boron B) into a thin film on a glass substrate, for example. The ion source is an apparatus that generates an ion beam. For example, the ion source is an apparatus that generates plasma and extracts and accelerates ions from the plasma, thereby generating an ion beam.

  A thin film transistor formed on a glass substrate is mainly used as a device for driving a liquid crystal panel or an organic EL panel. The substrate size is increasing year by year, and the ion beam size required for the ion implantation apparatus is also increasing.

The cross-sectional shape of an ion beam generally used is a ribbon-like rectangle in which one side (hereinafter referred to as a long side) is several to tens of times larger than the other side (hereinafter referred to as a short side). Such an ion beam is uniformly injected over the entire substrate. For a large substrate, an ion beam is implanted into the substrate while moving the substrate in the short side direction. The ion beam travels in the vacuum container and is injected into the substrate.
In order to maintain the quality of the device to be produced above a certain level, the intensity distribution of the ion beam in the long side direction must have uniformity. If the intensity distribution is worse than the specified uniformity, it is necessary to adjust the intensity distribution by some method.

  Conventional methods for adjusting the beam intensity distribution include the following methods (1) and (2).

(1) As shown in FIG. 8A, by arranging a plurality of magnetic poles 33 in the long side direction in the coil 31 and moving each magnetic pole 33 in the short side direction, the beam intensity distribution in the long side direction is adjusted. (For example, Patent Document 1). In this method, a part of the plurality of magnetic poles 33 is inserted into or extracted from the beam to adjust the local magnetic field, thereby adjusting the position of ions that feel the magnetic field of the part. The beam intensity distribution in the long side direction is adjusted.
For example, it is assumed that an ion beam having a long side of about 800 mm and a short side of about 10 mm to 50 mm is adjusted. The plurality of magnetic poles 33 are arranged so that a magnetic field is generated in the short side direction of the ion beam, and can be inserted into and extracted from the short side direction of the beam. If the magnetic pole 33 is inserted, the magnetic field is locally strengthened, and the position of ions that feel the magnetic field in that portion is adjusted with respect to other ions. The beam in the long side direction is adjusted by adjusting the local magnetic field strength so that ions reach the low ion part (profile valley), such as by increasing or decreasing the magnetic field of the high ion part (profile mountain). Adjust the intensity distribution.

(2) As shown in FIG. 8B, a plurality of electromagnets 39 each having a coil 37 wound around a magnetic pole 35 are arranged in the long side direction, and the magnetic field strength by these electromagnets 39 is adjusted by independent current supply means ( For example, Patent Document 2). That is, the local magnetic field strength can be independently adjusted by the same number of current supply means as the number of electromagnets 39 arranged along the long side direction of the beam. Thereby, the local magnetic field intensity | strength can be adjusted similarly to the method of said (1), and the beam intensity distribution of a long side direction can be adjusted.
Patent No. 2878112 Patent No. 4049163

In the method (1), it is necessary to reduce the dimension in the short side direction of the vacuum vessel as the magnetic pole moves in the short side direction. That is, by reducing the dimension of the vacuum container in the short side direction, the magnetic field acts on the ion beam from any position in the magnetic pole movement range in the short side direction. Accordingly, the width in the short side direction of the beam cannot be increased. Since the beam current can be increased by increasing the width in the short side direction of the beam, it is difficult to increase the current by the method (1). Although the current can be increased by increasing the current density without increasing the dimension in the short side direction of the beam, there is a possibility that the ions repel each other due to the same charge and the beam is expanded.
In the method (2), when the beam intensity distribution is adjusted using an electromagnet, not only the number of current supply means including a power source is remarkably increased, but also the control becomes complicated and the cost is increased.

  Accordingly, an object of the present invention is to solve the above-described problems, and to provide a beam profile adjusting apparatus capable of increasing the short side dimension of an ion beam and an ion implantation apparatus including the same.

To achieve the above object, according to the present invention, there is provided a beam profile adjusting device for adjusting an intensity distribution of an ion beam generated from an ion source,
The ion beam has a cross-sectional shape perpendicular to its traveling direction, the cross-sectional shape being long in the first direction and short in the second direction orthogonal to the first direction,
A magnet for applying a magnetic field to the ion beam;
The magnet is disposed in the vicinity of a region through which the ion beam passes, is opposed to the ion beam in the second direction, and can be adjusted in position in the first direction. An apparatus is provided.

In the beam profile adjusting apparatus of the present invention described above, a magnet for applying a magnetic field to the ion beam is provided, and the magnet is disposed in the vicinity of a region through which the ion beam passes and is arranged in the second direction (short ion beam). (Side direction) is opposed to the ion beam and can be adjusted in position in the first direction. By moving the magnet in the first direction (long side direction of the ion beam), the magnetic field strength is locally increased. It is possible to adjust the beam intensity distribution in the first direction so that the beam intensity distribution approaches the uniform direction.
Moreover, since the magnetic field applied to the ion beam is adjusted by adjusting the position of the magnet in the first direction and not by adjusting the position of the magnet in the second direction, the ion beam passage region width in the second direction can be increased. . Therefore, the size of the ion beam in the second direction can be increased, and as a result, a wide range of large current ion beams can be used in the second direction. Therefore, an increase in the ion beam current value leads to a reduction in irradiation time per object (for example, a substrate), so that productivity is improved.

According to a preferred embodiment of the present invention, the magnet is an electromagnet having a movable magnetic pole part and a coil wound around the movable magnetic pole part and stationary.
The coil has an internal space in which the movable magnetic pole portion is disposed, and the internal space extends in the first direction so that the movable magnetic pole portion can move in the first direction within the internal space. The movable magnetic pole portion is movable in the first direction.

  Thus, when the magnet is an electromagnet, the internal space of the coil extends in the first direction so that the movable magnetic pole portion can move in the first direction, and the movable magnetic pole portion is in the first direction. Since it is movable, it is not necessary to move the coil, and only the movable magnetic pole portion needs to be moved.

  Preferably, a plurality of the movable magnetic pole portions are arranged in the internal space.

As described above, since the plurality of movable magnetic pole portions are arranged in the internal space, the beam intensity distribution in the first direction can be obtained by moving each movable magnetic pole portion in the first direction in the internal space of the coil. It can be adjusted more finely.
Moreover, what is necessary is just to provide one coil with respect to a some movable magnetic pole part.

  According to another embodiment of the present invention, a plurality of the magnets are provided in the first direction.

  For example, a plurality of electromagnets each composed of a movable magnetic pole portion (such as an iron core) and a coil wound around the movable magnetic pole portion may be provided in the first direction, or a plurality of permanent magnets may be provided in the first direction.

In order to achieve the above object, according to the present invention, an ion implantation apparatus for implanting an ion beam into an object,
An ion source for generating an ion beam;
A container having a space inside for passing the ion beam to the object;
An ion implantation apparatus including the beam profile adjustment apparatus described above is provided.

  According to the present invention described above, the dimension of the ion beam in the short side direction can be increased in adjusting the intensity distribution of the ion beam.

  The best mode for carrying out the present invention will be described with reference to the drawings. In addition, in each figure, the same code | symbol is attached | subjected to a common or corresponding part, and the overlapping description is abbreviate | omitted.

  FIG. 1 is a configuration diagram of an ion implantation apparatus to which the beam profile adjusting apparatus of the present invention can be applied. 1A is a partially transparent plan view, and FIG. 1B is a BB line arrow view of FIG. 1A. The ion implantation apparatus 20 is an apparatus for injecting an ion beam into the object 1, and includes a container 3, an ion source 5, a mass separation type magnet 7, a beam profile adjustment apparatus 10, a beam profile monitor 9, and the like.

  The container 3 is a vacuum container whose inside is evacuated in this example, and has a plasma chamber 3a, a beam acceleration chamber 3b, a beam passage chamber 3c, and a processing chamber 3d communicating with each other. In the plasma chamber 3a, plasma is generated, and in the beam acceleration chamber 3b, an ion beam extracted from the plasma is accelerated. The ion beam passes through the beam passage chamber 3c and the object 1 (for example, a glass substrate) in the processing chamber 3d. Into the upper thin film).

  The ion source 5 is a device that generates an ion beam. In this example, the ion source 5 is not shown in the figure, but a gas introducing device for introducing a material gas into the plasma chamber 3a and a thermoelectron generated and colliding the thermoelectron with the material gas to turn the material gas into plasma. And an extraction electrode for extracting an ion beam from the plasma and accelerating it in the beam acceleration chamber 3b.

The mass separation magnet 7 rotates each ion in the ion beam with a radius of curvature depending on its charge and mass by applying a magnetic field to the ion beam. In this example, the mass separation type magnet 7 is composed of a pair of electromagnets 11 arranged so as to face each other so as to sandwich the ion beam as shown in FIG. Each electromagnet 11 includes a magnetic pole part 11a formed of iron or the like, and a coil 11b wound around the magnetic pole part 11a. With such a configuration, a uniform magnetic field is applied to the ion beam, and each ion rotates with a radius of curvature depending on its charge and mass.
A separation slit 13 is provided downstream of the mass separation type magnet 7. The separation slit 13 has a gap through which the ion beam passes, and the shape of the gap may be horizontally long (for example, a rectangle) corresponding to the cross-sectional shape of the ion beam that has passed through the separation slit 13.
By such a mass separation type magnet 7 and the separation slit 13, desired ions are sorted and pass through the gap of the separation slit 13. By passing through the separation slit 13, the ion beam is composed of only desired ions.

  The beam profile adjusting device 10 adjusts the intensity distribution in the first direction (that is, the long side direction of the beam) of the ion beam generated from the ion source 5. In this example, the beam profile adjusting device 10 adjusts the intensity distribution of the ion beam that has passed through the separation slit 13. For example, the intensity distribution in the first direction of the ion beam that has passed through the separation slit 13 is ideally uniform, but is actually nonuniform. Therefore, the ion profile intensity distribution in the first direction is adjusted uniformly by the beam profile adjusting device 10. More specifically, the intensity distribution is a distribution in the first direction with respect to the total amount of current in the beam existence range in the second direction per unit length in the first direction.

  The beam profile monitor 9 detects the intensity distribution in the first direction of the ion beam. This detection is performed in a state in which the object 1 and the moving stage 15 that moves the object 1 in the short side direction are removed. For example, the beam profile monitor 9 includes a Faraday cup array that detects ion beam intensity (that is, current density) at each position in a plane perpendicular to the traveling direction of the ion beam.

  The beam profile adjusting apparatus 10 will be described in more detail. FIG. 2 is an enlarged view of the beam adjustment apparatus 10 shown in FIG. 3 is a cross-sectional view taken along line III-III in FIG.

  The beam profile adjusting apparatus 10 includes a magnet 17 that applies a magnetic field to the ion beam. The magnet 17 is disposed in the vicinity of the region through which the ion beam passes, is opposed to the ion beam in the second direction, and can be adjusted in position in the first direction. In the example of FIG. 3, the magnets 17 are provided at two locations so as to sandwich the ion beam in the second direction.

According to the present embodiment, the magnet 17 is an electromagnet having a movable magnetic pole portion 17a made of, for example, iron, and a coil 17b that is wound and stationary so as to surround the movable magnetic pole portion 17a. In this case, the coil 17b has an internal space 19 in which the movable magnetic pole portion 17a is disposed, and the internal space 19 is arranged in the first direction so that the movable magnetic pole portion 17a can move in the first direction within the internal space 19. The movable magnetic pole portion 17a is movable in the first direction.
Each movable magnetic pole portion 17a applies a magnetic field directed in the second direction to the ion beam. In the example of FIG. 3, the right movable magnetic pole portion 17 a and the left movable magnetic pole portion 17 a generate a magnetic field that is directed in the same direction (for example, the direction from left to right in FIG. 3) to strengthen the magnetic fields. Thereby, even if the ion beam width in the second direction is large, the intensity distribution in the first direction of the beam can be adjusted.
The value of the current flowing through each coil 17b may be constant or adjustable.

Preferably, a plurality of movable magnetic pole portions 17a are disposed in the internal space 19, and each movable magnetic pole portion 17a is movable in the first direction. These movable magnetic pole portions 17a are preferably movable in the first direction independently of each other.
As shown in FIG. 3, a guide portion 21 that guides the movement of each movable magnetic pole portion 17a in the first direction may be provided. The guide portion 21 may be a mechanism that allows each movable magnetic pole portion 17a to move only in the first direction and prevents each movable magnetic pole portion 17a from moving in the other direction.

The movement of each movable magnetic pole part 17a in the first direction may be performed by operating the operation part 23 fixed to each movable magnetic pole part 17a as shown in FIG. In this case, the detection result of the intensity distribution in the first direction by the beam profile monitor 9 may be displayed on a display (not shown), and the operation unit 23 may be operated based on the display result. In addition, you may adjust the electric current sent through each coil 17b by a person operating the electric current supply apparatus (not shown) which supplies an electric current to the coil 17b.
Instead, as shown in FIG. 4, the control device 25 may control the driving device 27 so that the intensity distribution is made closer to the uniformity based on the beam intensity distribution detection result by the beam profile monitor 9. Each driving device 27 is a device that moves the corresponding movable magnetic pole portion 17a in the first direction. Further, the control device 25 controls not only the driving device 27 but also a current supply device (not shown) for supplying current to the coil 17b based on the beam intensity distribution detection result, so that the current flowing to the coil 17b is also controlled. You may adjust. This current adjustment may be performed independently for each coil 17b. FIG. 4 corresponds to FIG.
By such adjustment, the intensity distribution of the ion beam can be adjusted uniformly or close to uniform.

The operation of the beam profile adjusting apparatus 10 will be described.
For example, it is assumed that the intensity distribution in the long side direction of the ion beam that has passed through the separation slit 13 is the distribution shown in FIG. In this case, the intensity distribution is adjusted in the direction of the arrow in FIG. 5A by moving the three movable magnetic pole portions 17a to the positions P1, P2, and P3 in FIG. ) To a highly uniform distribution shown in FIG.
In addition, each movable magnetic pole part 17a can be attached or detached with respect to the coil 17b (for example, guide part 21), and you may make it adjust the number of the movable magnetic pole parts 17a arrange | positioned in the internal space 19 of the coil 17b. Thereby, the intensity distribution of the ion beam can be adjusted more finely.

According to the beam profile adjusting apparatus of the embodiment of the present invention described above, the following effects (A) to (D) can be obtained.
(A) A magnet 17 that applies a magnetic field to the ion beam is provided, and the magnet 17 (movable magnetic pole portion 17a) is disposed in the vicinity of the region through which the ion beam passes and faces the ion beam in the second direction. Since the position can be adjusted in the first direction, the magnetic field intensity is locally adjusted by moving the magnet 17 (movable magnetic pole portion 17a) in the first direction (long-side direction of the ion beam). The beam intensity distribution with respect to the direction can be adjusted uniformly.

(B) Moreover, the magnetic field applied to the ion beam is adjusted by adjusting the position of the magnet 17 (movable magnetic pole portion 17a) in the first direction and not by adjusting the position of the magnet 17 in the second direction. The ion beam passage region width in the second direction can be increased. Therefore, the size of the ion beam in the second direction can be increased, and as a result, a wide range of large current ion beams can be used in the second direction. Therefore, an increase in the ion beam current value leads to a reduction in the time for irradiating one object 1 (for example, a substrate), so that productivity is improved.

(C) When the magnet 17 is an electromagnet, the internal space 19 of the coil 17b extends in the first direction so that the movable magnetic pole portion 17a can move in the first direction within the internal space 19, and the movable magnetic pole Since the portion 17a is movable in the first direction, it is not necessary to move the coil 17b, and only the movable magnetic pole portion 17a needs to be moved.

(D) Since the plurality of movable magnetic pole portions 17a are arranged in the internal space 19, the beam intensity in the first direction can be obtained by moving each movable magnetic pole portion 17a in the first space in the internal space 19 of the coil 17b. The distribution can be adjusted more finely. Further, it is only necessary to provide one coil 17b for the plurality of movable magnetic pole portions 17a.

  The present invention is not limited to the above-described embodiment, and various changes can be made without departing from the scope of the present invention.

For example, the beam profile adjusting apparatus 10 may include a plurality of electromagnets 17 arranged in the first direction as shown in FIG. In this case, the following configuration may be used.
Each magnet 17 has a movable magnetic pole part 17a and a coil 17b wound around it, and applies a magnetic field directed in the second direction to the ion beam. Each magnet 17 is movable in the first direction. These magnets 17 are preferably movable in the first direction independently of each other. A guide portion (not shown) for guiding the movement of each magnet 17 in the first direction may be provided. This guide part may be a mechanism that allows the magnet 17 to move only in the first direction and prevents the magnet 17 from moving in the other direction.
The movement of each magnet 17 in the first direction may be performed by operating the operation unit 23 fixed to each movable magnetic pole portion 17a as shown in FIG. In this case, the detection result of the intensity distribution in the first direction by the beam profile monitor 9 may be displayed on a display (not shown), and the operation unit 23 may be operated based on the display result. In addition, you may adjust the electric current sent through each coil 17b by a person operating the electric current supply apparatus (not shown) which supplies an electric current to the coil 17b. Instead, as shown in FIG. 7, the control device 25 controls each drive device 27 so that the intensity distribution is made closer to the intensity distribution based on the beam intensity distribution detection result by the beam profile monitor 9. It may be moved in one direction. Each driving device 27 is a device that moves the corresponding magnet 17 in the first direction. Further, the control device 25 controls not only the drive device 27 but also a current supply device (not shown) for supplying a current to each coil 17b based on the beam intensity distribution detection result so that the current flows to the coil 17b. The current may also be adjusted. This current adjustment may be performed independently for each coil 17b. FIG. 7 corresponds to FIG. By such adjustment, the intensity distribution of the ion beam can be made uniform or close to desired.
Other configurations, operations, and the like in this case may be the same as those in the above-described embodiment. 6 or 7, the permanent magnet 17 may be used instead of the electromagnet 17.

  The beam profile adjusting apparatus of the present invention can also be applied to ion implantation apparatuses other than the ion implantation apparatus according to the above-described embodiments. For example, the beam profile adjusting apparatus of the present invention can be applied to an ion implantation apparatus that does not have the mass separation type magnet 7.

It is a block diagram of the ion implantation apparatus which can apply the beam profile adjustment apparatus of this invention. It is the elements on larger scale which show the beam profile adjustment apparatus vicinity shown in FIG.1 (B). It is the III-III sectional view taken on the line of FIG. It is a block diagram in the case of controlling a beam profile adjustment apparatus automatically. It is explanatory drawing of the effect | action by embodiment of this invention. 6 shows another embodiment of the beam profile adjusting device of the present invention. It is a block diagram in the case of controlling automatically the beam profile adjustment apparatus corresponding to FIG. This is a conventional configuration for adjusting the intensity distribution of the ion beam.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Object, 3 Container, 3a Plasma chamber, 3b Beam acceleration chamber, 3c Beam passage chamber, 3d Processing chamber, 5 Ion source, 7 Mass separation type magnet, 9 Beam profile monitor, 10 Beam profile adjustment apparatus, 11a Magnetic pole part, 11b Coil, 13 Separation slit, 15 Moving stage, 17 Magnet, 17a Movable magnetic pole part, 17b Coil 19 Internal space, 20 Ion implantation device, 21 Guide part, 23 Operation part, 25 Control device, 27 Drive device,

Claims (5)

A beam profile adjusting device for adjusting an intensity distribution of an ion beam generated from an ion source,
The ion beam has a cross-sectional shape perpendicular to its traveling direction, the cross-sectional shape being long in the first direction and short in the second direction orthogonal to the first direction,
A magnet for applying a magnetic field to the ion beam;
The magnet is disposed in the vicinity of a region through which the ion beam passes, is opposed to the ion beam in the second direction, and can be adjusted in position in the first direction. apparatus. The magnet is an electromagnet having a movable magnetic pole portion and a coil wound around the movable magnetic pole portion and stationary.
The coil has an internal space in which the movable magnetic pole portion is disposed, and the internal space extends in the first direction so that the movable magnetic pole portion can move in the first direction within the internal space. The beam profile adjusting device according to claim 1, wherein the movable magnetic pole portion is movable in the first direction.   The beam profile adjusting apparatus according to claim 2, wherein a plurality of the movable magnetic pole portions are arranged in the internal space.   The beam profile adjusting device according to claim 1, wherein a plurality of the magnets are provided in the first direction. An ion implantation apparatus for implanting an ion beam into an object,
An ion source for generating an ion beam;
A container having a space inside for passing the ion beam to the object;
An ion implantation apparatus comprising: the beam profile adjustment apparatus according to claim 1.

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