CN105826202B - 半导体器件的制作方法和半导体器件 - Google Patents
半导体器件的制作方法和半导体器件 Download PDFInfo
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- CN105826202B CN105826202B CN201510012857.XA CN201510012857A CN105826202B CN 105826202 B CN105826202 B CN 105826202B CN 201510012857 A CN201510012857 A CN 201510012857A CN 105826202 B CN105826202 B CN 105826202B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 61
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 15
- 238000005468 ion implantation Methods 0.000 claims abstract description 9
- 229920005591 polysilicon Polymers 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 25
- 238000002513 implantation Methods 0.000 claims description 12
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 6
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 claims description 6
- 238000002955 isolation Methods 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 238000013461 design Methods 0.000 abstract description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
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- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
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Claims (10)
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Application Number | Priority Date | Filing Date | Title |
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CN201510012857.XA CN105826202B (zh) | 2015-01-09 | 2015-01-09 | 半导体器件的制作方法和半导体器件 |
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CN201510012857.XA CN105826202B (zh) | 2015-01-09 | 2015-01-09 | 半导体器件的制作方法和半导体器件 |
Publications (2)
Publication Number | Publication Date |
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CN105826202A CN105826202A (zh) | 2016-08-03 |
CN105826202B true CN105826202B (zh) | 2020-03-06 |
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CN201510012857.XA Expired - Fee Related CN105826202B (zh) | 2015-01-09 | 2015-01-09 | 半导体器件的制作方法和半导体器件 |
Country Status (1)
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CN (1) | CN105826202B (zh) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5973361A (en) * | 1996-03-06 | 1999-10-26 | Magepower Semiconductor Corporation | DMOS transistors with diffusion merged body regions manufactured with reduced number of masks and enhanced ruggedness |
CN103681842A (zh) * | 2012-09-14 | 2014-03-26 | 北大方正集团有限公司 | 一种vdmos管以及vdmos管的制造方法 |
CN103918084A (zh) * | 2011-11-02 | 2014-07-09 | 株式会社电装 | 半导体装置 |
-
2015
- 2015-01-09 CN CN201510012857.XA patent/CN105826202B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5973361A (en) * | 1996-03-06 | 1999-10-26 | Magepower Semiconductor Corporation | DMOS transistors with diffusion merged body regions manufactured with reduced number of masks and enhanced ruggedness |
CN103918084A (zh) * | 2011-11-02 | 2014-07-09 | 株式会社电装 | 半导体装置 |
CN103681842A (zh) * | 2012-09-14 | 2014-03-26 | 北大方正集团有限公司 | 一种vdmos管以及vdmos管的制造方法 |
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CN105826202A (zh) | 2016-08-03 |
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Effective date of registration: 20220616 Address after: 3007, Hengqin international financial center building, No. 58, Huajin street, Hengqin new area, Zhuhai, Guangdong 519031 Patentee after: New founder holdings development Co.,Ltd. Patentee after: BEIJING FOUNDER ELECTRONICS Co.,Ltd. Address before: 100871, Beijing, Haidian District Cheng Fu Road 298, founder building, 9 floor Patentee before: PEKING UNIVERSITY FOUNDER GROUP Co.,Ltd. Patentee before: BEIJING FOUNDER ELECTRONICS Co.,Ltd. |
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