CN105745173B - 用于在碳化硅上形成石墨烯层的方法 - Google Patents

用于在碳化硅上形成石墨烯层的方法 Download PDF

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Publication number
CN105745173B
CN105745173B CN201480056975.4A CN201480056975A CN105745173B CN 105745173 B CN105745173 B CN 105745173B CN 201480056975 A CN201480056975 A CN 201480056975A CN 105745173 B CN105745173 B CN 105745173B
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metal
sic
graphene
carbon
layer
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CN105745173A (zh
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弗兰切斯卡·亚科皮
穆赫辛·艾哈迈德
本杰明·沃恩·坎宁
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University of Technology Sydney
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/026—Solid phase epitaxial growth through a disordered intermediate layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349—Creating layers of material on a substrate
    • B81C1/0038—Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/188—Preparation by epitaxial growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/10—Single-crystal growth directly from the solid state by solid state reactions or multi-phase diffusion
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/203—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using transformation of metal, e.g. oxidation or nitridation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3208—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3241—Materials thereof being conductive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3406—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0197—Processes for making multi-layered devices not provided for in groups B81C2201/0176 - B81C2201/0192

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thermal Sciences (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Micromachines (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
CN201480056975.4A 2013-09-16 2014-09-08 用于在碳化硅上形成石墨烯层的方法 Expired - Fee Related CN105745173B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
AU2013903547 2013-09-16
AU2013903547A AU2013903547A0 (en) 2013-09-16 Process for forming graphene layers on silicon carbide
AU2014902792A AU2014902792A0 (en) 2014-07-18 Process for forming graphene layers on silicon carbide
AU2014902792 2014-07-18
PCT/AU2014/050218 WO2015035465A1 (en) 2013-09-16 2014-09-08 Process for forming graphene layers on silicon carbide

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CN105745173A CN105745173A (zh) 2016-07-06
CN105745173B true CN105745173B (zh) 2019-01-18

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US (1) US9771665B2 (https=)
EP (1) EP3046872A4 (https=)
JP (1) JP6680678B2 (https=)
KR (1) KR20160070073A (https=)
CN (1) CN105745173B (https=)
WO (1) WO2015035465A1 (https=)

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US10910165B2 (en) 2015-03-06 2021-02-02 University Of Technology Sydney Process, a structure, and a supercapacitor
JP6426636B2 (ja) * 2016-02-10 2018-11-21 日本電信電話株式会社 センサ
CN106517165B (zh) * 2016-11-07 2018-06-05 山东大学 一种在6H/4H-SiC硅面上用金属辅助内外碳源结合方式生长石墨烯的方法
TWI607966B (zh) * 2016-12-22 2017-12-11 國家中山科學研究院 不同相之石墨結構製作方法
CN106946244B (zh) * 2017-03-22 2019-03-29 西京学院 一种基于无电镀铜SiC颗粒制备石墨烯和碳纳米管混合物的方法
KR101944385B1 (ko) * 2017-09-14 2019-02-01 김동호 메커니컬 실
CN108101028A (zh) * 2017-09-18 2018-06-01 山东大学 一种在6H/4H-SiC硅面上利用复合金属辅助生长石墨烯的方法
MY188501A (en) * 2018-12-26 2021-12-16 Mimos Berhad Method of forming graphene bump structure
CN109742379A (zh) * 2019-01-28 2019-05-10 哈工大机器人（岳阳）军民融合研究院 一种在Si/C复合材料上生长石墨烯的方法、利用该方法制得的材料以及其应用
CN111747372B (zh) * 2019-03-26 2024-06-14 深圳清力技术有限公司 一种无边缘凸起的金属盖石墨岛及其制备方法
CN110124526B (zh) * 2019-04-30 2022-06-28 湖北工业大学 一种碳化硅无机陶瓷膜的生产方法
US20230404458A1 (en) * 2020-10-30 2023-12-21 University Of Technology Sydney Graphene based electrode for electrophysiological readings
CN115465856B (zh) * 2021-06-10 2024-07-19 中国科学院上海微系统与信息技术研究所 图形化石墨烯的制备方法
CN113604100B (zh) * 2021-07-30 2022-12-20 雷索新材料(苏州)有限公司 一种石墨烯/铜/微米颗粒复合材料及其制备方法、石墨烯高温发热油墨及应用
TWI780901B (zh) * 2021-09-09 2022-10-11 合晶科技股份有限公司 複合基板及其製造方法
CN114314569B (zh) * 2022-01-10 2024-01-09 厦门大学 一种在基体上形成石墨烯的方法

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CN101834206A (zh) * 2010-04-12 2010-09-15 清华大学 半导体器件结构及其形成方法
JP2012025004A (ja) * 2010-07-22 2012-02-09 Seiko Epson Corp グラフェンシート付き基材及びグラフェンシートの製造方法

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Publication number Publication date
CN105745173A (zh) 2016-07-06
WO2015035465A1 (en) 2015-03-19
KR20160070073A (ko) 2016-06-17
US9771665B2 (en) 2017-09-26
JP2016537292A (ja) 2016-12-01
EP3046872A1 (en) 2016-07-27
JP6680678B2 (ja) 2020-04-15
US20160230304A1 (en) 2016-08-11
EP3046872A4 (en) 2017-07-12

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