CN105742296A - 一种阵列基板及其制备方法、显示面板和显示装置 - Google Patents
一种阵列基板及其制备方法、显示面板和显示装置 Download PDFInfo
- Publication number
- CN105742296A CN105742296A CN201610200728.8A CN201610200728A CN105742296A CN 105742296 A CN105742296 A CN 105742296A CN 201610200728 A CN201610200728 A CN 201610200728A CN 105742296 A CN105742296 A CN 105742296A
- Authority
- CN
- China
- Prior art keywords
- functional layer
- insulating barrier
- array base
- base palte
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000002346 layers by function Substances 0.000 claims abstract description 161
- 239000010410 layer Substances 0.000 claims abstract description 63
- 229910052751 metal Inorganic materials 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 22
- 238000005530 etching Methods 0.000 claims abstract description 21
- 238000004080 punching Methods 0.000 claims abstract description 6
- 230000004888 barrier function Effects 0.000 claims description 131
- 238000000059 patterning Methods 0.000 claims description 29
- 238000000151 deposition Methods 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- 230000005484 gravity Effects 0.000 claims description 4
- 239000002356 single layer Substances 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims description 3
- 239000011148 porous material Substances 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract 4
- 208000034699 Vitreous floaters Diseases 0.000 description 19
- 238000002360 preparation method Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000011218 segmentation Effects 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229910004205 SiNX Inorganic materials 0.000 description 5
- 230000004899 motility Effects 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229920001621 AMOLED Polymers 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 210000001525 retina Anatomy 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
- G02F1/13685—Top gates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L2021/775—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate comprising a plurality of TFTs on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nonlinear Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Ceramic Engineering (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims (20)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610200728.8A CN105742296B (zh) | 2016-03-31 | 2016-03-31 | 一种阵列基板及其制备方法、显示面板和显示装置 |
US15/186,869 US10115744B2 (en) | 2016-03-31 | 2016-06-20 | Array substrate and fabrication method, display panel, and display device |
DE102016218187.4A DE102016218187B4 (de) | 2016-03-31 | 2016-09-22 | Array-Substrat und Herstellungsverfahren, Anzeigepaneel und Anzeigeeinrichtung |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610200728.8A CN105742296B (zh) | 2016-03-31 | 2016-03-31 | 一种阵列基板及其制备方法、显示面板和显示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105742296A true CN105742296A (zh) | 2016-07-06 |
CN105742296B CN105742296B (zh) | 2019-05-07 |
Family
ID=56252638
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610200728.8A Active CN105742296B (zh) | 2016-03-31 | 2016-03-31 | 一种阵列基板及其制备方法、显示面板和显示装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US10115744B2 (zh) |
CN (1) | CN105742296B (zh) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106200167A (zh) * | 2016-08-25 | 2016-12-07 | 武汉华星光电技术有限公司 | 阵列基板及液晶显示器 |
CN106782241A (zh) * | 2016-12-29 | 2017-05-31 | 武汉华星光电技术有限公司 | 一种用于阵列基板的测试电路及制作方法 |
CN107133613A (zh) * | 2017-06-06 | 2017-09-05 | 上海天马微电子有限公司 | 一种显示面板及显示装置 |
CN107481938A (zh) * | 2017-09-26 | 2017-12-15 | 武汉华星光电技术有限公司 | 显示面板、显示装置及低温多晶硅薄膜晶体管的制备方法 |
CN108010918A (zh) * | 2017-11-27 | 2018-05-08 | 武汉华星光电技术有限公司 | Tft阵列基板及tft阵列基板的制作方法 |
CN108255339A (zh) * | 2018-01-15 | 2018-07-06 | 昆山龙腾光电有限公司 | 触控显示面板及装置 |
CN109659357A (zh) * | 2018-12-18 | 2019-04-19 | 武汉华星光电半导体显示技术有限公司 | 薄膜晶体管和显示面板 |
CN109871151A (zh) * | 2019-03-29 | 2019-06-11 | 上海中航光电子有限公司 | 显示面板和显示装置 |
CN110190073A (zh) * | 2019-07-25 | 2019-08-30 | 武汉华星光电半导体显示技术有限公司 | 阵列基板 |
CN109244086B (zh) * | 2018-09-29 | 2020-06-23 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示面板、显示装置 |
CN112612164A (zh) * | 2021-01-04 | 2021-04-06 | 深圳市华星光电半导体显示技术有限公司 | 显示面板及其制备方法 |
US11374035B2 (en) | 2019-07-25 | 2022-06-28 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Array substrate and display panel |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109728006B (zh) * | 2017-10-30 | 2020-07-14 | 南京威派视半导体技术有限公司 | 基于复合介质栅mosfet的全局曝光光敏探测器 |
CN110797380A (zh) * | 2019-11-06 | 2020-02-14 | 京东方科技集团股份有限公司 | 显示基板及其制作方法、显示装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1507045A (zh) * | 2002-12-11 | 2004-06-23 | ���ǵ�����ʽ���� | 包括金属-绝缘体-金属电容器的集成电路装置和半导体装置 |
US20080225190A1 (en) * | 2007-03-15 | 2008-09-18 | Au Optronics Corporation | Semiconductor structure and fabricating method thereof for liquid crystal display device |
CN102269901A (zh) * | 2010-06-07 | 2011-12-07 | 三星移动显示器株式会社 | 平板显示设备及其制造方法 |
US20130256678A1 (en) * | 2010-12-09 | 2013-10-03 | Sharp Kabushiki Kaisha | Thin film transistor array substrate |
CN103777418A (zh) * | 2014-01-27 | 2014-05-07 | 京东方科技集团股份有限公司 | 一种阵列基板、液晶显示面板及显示装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101097167B1 (ko) * | 2005-06-07 | 2011-12-22 | 엘지디스플레이 주식회사 | 유기전계발광표시소자 및 그 제조방법 |
JP2009037115A (ja) | 2007-08-03 | 2009-02-19 | Sony Corp | 半導体装置およびその製造方法、並びに表示装置 |
US9318484B2 (en) * | 2013-02-20 | 2016-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
CN103715141B (zh) | 2013-12-27 | 2015-02-18 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法 |
CN104867878A (zh) | 2015-05-26 | 2015-08-26 | 武汉华星光电技术有限公司 | 一种ltps阵列基板及其制作方法 |
-
2016
- 2016-03-31 CN CN201610200728.8A patent/CN105742296B/zh active Active
- 2016-06-20 US US15/186,869 patent/US10115744B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1507045A (zh) * | 2002-12-11 | 2004-06-23 | ���ǵ�����ʽ���� | 包括金属-绝缘体-金属电容器的集成电路装置和半导体装置 |
US20080225190A1 (en) * | 2007-03-15 | 2008-09-18 | Au Optronics Corporation | Semiconductor structure and fabricating method thereof for liquid crystal display device |
CN102269901A (zh) * | 2010-06-07 | 2011-12-07 | 三星移动显示器株式会社 | 平板显示设备及其制造方法 |
US20130256678A1 (en) * | 2010-12-09 | 2013-10-03 | Sharp Kabushiki Kaisha | Thin film transistor array substrate |
CN103777418A (zh) * | 2014-01-27 | 2014-05-07 | 京东方科技集团股份有限公司 | 一种阵列基板、液晶显示面板及显示装置 |
Cited By (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106200167B (zh) * | 2016-08-25 | 2019-06-11 | 武汉华星光电技术有限公司 | 阵列基板及液晶显示器 |
CN106200167A (zh) * | 2016-08-25 | 2016-12-07 | 武汉华星光电技术有限公司 | 阵列基板及液晶显示器 |
CN106782241A (zh) * | 2016-12-29 | 2017-05-31 | 武汉华星光电技术有限公司 | 一种用于阵列基板的测试电路及制作方法 |
CN107133613A (zh) * | 2017-06-06 | 2017-09-05 | 上海天马微电子有限公司 | 一种显示面板及显示装置 |
CN107133613B (zh) * | 2017-06-06 | 2020-06-30 | 上海天马微电子有限公司 | 一种显示面板及显示装置 |
CN107481938B (zh) * | 2017-09-26 | 2020-02-18 | 武汉华星光电技术有限公司 | 显示面板、显示装置及低温多晶硅薄膜晶体管的制备方法 |
WO2019061586A1 (zh) * | 2017-09-26 | 2019-04-04 | 武汉华星光电技术有限公司 | 显示面板、显示装置及低温多晶硅薄膜晶体管的制备方法 |
US10515984B1 (en) | 2017-09-26 | 2019-12-24 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Display panel, display device and method for preparing a low-temperature polysilicon thin film transistor |
CN107481938A (zh) * | 2017-09-26 | 2017-12-15 | 武汉华星光电技术有限公司 | 显示面板、显示装置及低温多晶硅薄膜晶体管的制备方法 |
CN108010918A (zh) * | 2017-11-27 | 2018-05-08 | 武汉华星光电技术有限公司 | Tft阵列基板及tft阵列基板的制作方法 |
CN108010918B (zh) * | 2017-11-27 | 2020-06-16 | 武汉华星光电技术有限公司 | Tft阵列基板及tft阵列基板的制作方法 |
CN108255339A (zh) * | 2018-01-15 | 2018-07-06 | 昆山龙腾光电有限公司 | 触控显示面板及装置 |
CN109244086B (zh) * | 2018-09-29 | 2020-06-23 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示面板、显示装置 |
US10923508B2 (en) | 2018-09-29 | 2021-02-16 | Boe Technology Group Co., Ltd. | Array substrate and manufacturing method therefor, display panel, and display device |
CN109659357A (zh) * | 2018-12-18 | 2019-04-19 | 武汉华星光电半导体显示技术有限公司 | 薄膜晶体管和显示面板 |
US11189731B2 (en) | 2018-12-18 | 2021-11-30 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Thin-film transistor and display panel |
CN109871151B (zh) * | 2019-03-29 | 2021-09-28 | 上海中航光电子有限公司 | 显示面板和显示装置 |
CN109871151A (zh) * | 2019-03-29 | 2019-06-11 | 上海中航光电子有限公司 | 显示面板和显示装置 |
CN110190073A (zh) * | 2019-07-25 | 2019-08-30 | 武汉华星光电半导体显示技术有限公司 | 阵列基板 |
WO2021012567A1 (zh) * | 2019-07-25 | 2021-01-28 | 武汉华星光电半导体显示技术有限公司 | 阵列基板和显示面板 |
US11374035B2 (en) | 2019-07-25 | 2022-06-28 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Array substrate and display panel |
CN112612164A (zh) * | 2021-01-04 | 2021-04-06 | 深圳市华星光电半导体显示技术有限公司 | 显示面板及其制备方法 |
WO2022142119A1 (zh) * | 2021-01-04 | 2022-07-07 | 深圳市华星光电半导体显示技术有限公司 | 显示面板及其制备方法 |
US11982911B2 (en) | 2021-01-04 | 2024-05-14 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display panel and preparing method thereof |
Also Published As
Publication number | Publication date |
---|---|
US10115744B2 (en) | 2018-10-30 |
CN105742296B (zh) | 2019-05-07 |
US20170287947A1 (en) | 2017-10-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105742296A (zh) | 一种阵列基板及其制备方法、显示面板和显示装置 | |
CN108376672B (zh) | 阵列基板及其制备方法,以及显示装置 | |
CN103258840B (zh) | 显示面板及制造具有触摸感应界面的显示面板的方法 | |
US11257851B2 (en) | Array substrate and manufacturing method thereof, and display device | |
CN103943628B (zh) | Tft阵列基板、制造方法及其显示面板 | |
CN109860224B (zh) | 显示基板及其制作方法、显示面板、显示装置 | |
CN107490913B (zh) | 阵列基板、显示面板及显示装置 | |
CN105161495B (zh) | 一种阵列基板及其制作方法、显示面板 | |
CN104716144A (zh) | 阵列基板及其制作方法、显示装置 | |
CN109671722B (zh) | 有机发光二极管阵列基板及其制造方法 | |
CN103474437B (zh) | 一种阵列基板及其制备方法与显示装置 | |
US20230075199A1 (en) | Display substrate and manufacturing method therefor, and display device | |
CN105047609A (zh) | 有机发光二极管阵列基板及其制备方法、触控显示装置 | |
CN105655378A (zh) | 一种阵列基板和oled显示面板、制备方法及显示装置 | |
CN109300963B (zh) | 基于屏下指纹识别的amoled显示结构及其制备方法 | |
CN105630247A (zh) | 一种阵列基板 | |
TW201809818A (zh) | 顯示裝置 | |
CN111834292B (zh) | 一种显示基板及其制作方法、显示面板及显示装置 | |
CN109950420A (zh) | 阵列基板及其制作方法、显示面板及显示装置 | |
WO2023173462A1 (zh) | 显示面板 | |
CN103730450A (zh) | 有机电激发光二极体储存电容结构及其制备方法 | |
CN105633099A (zh) | 一种阵列基板、其制作方法及显示面板 | |
CN101494226B (zh) | 薄膜晶体管基板及其制造方法、布线结构及其制造方法 | |
CN103915443A (zh) | 一种阵列基板及其制备方法、液晶显示装置 | |
CN110931511A (zh) | 一种显示面板及其制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20211027 Address after: No.8, liufangyuan Henglu, Donghu New Technology Development Zone, Wuhan City, Hubei Province Patentee after: WUHAN TIANMA MICRO-ELECTRONICS Co.,Ltd. Patentee after: Wuhan Tianma Microelectronics Co.,Ltd. Shanghai Branch Patentee after: Tianma Micro-Electronics Co.,Ltd. Address before: Room 509, building 1, No. 6111, Longdong Avenue, Pudong New Area, Shanghai, 200120 Patentee before: SHANGHAI TIANMA AM-OLED Co.,Ltd. Patentee before: Tianma Micro-Electronics Co.,Ltd. |