CN105723498B - 等离子体流枪以及等离子体回路组件 - Google Patents

等离子体流枪以及等离子体回路组件 Download PDF

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Publication number
CN105723498B
CN105723498B CN201480058435.XA CN201480058435A CN105723498B CN 105723498 B CN105723498 B CN 105723498B CN 201480058435 A CN201480058435 A CN 201480058435A CN 105723498 B CN105723498 B CN 105723498B
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CN
China
Prior art keywords
plasma
conducting block
closed loop
block part
plasma chamber
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CN201480058435.XA
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English (en)
Chinese (zh)
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CN105723498A (zh
Inventor
阿里·夏奇
大卫·索尼什恩
麦可·基什尼夫斯基
安德鲁·B·考
葛雷哥里·E·斯特拉托蒂
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Varian Semiconductor Equipment Associates Inc
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Varian Semiconductor Equipment Associates Inc
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H01J2237/0044—Neutralising arrangements of objects being observed or treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/327—Arrangements for generating the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/336—Changing physical properties of treated surfaces
    • H01J2237/3365—Plasma source implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Plasma Technology (AREA)
CN201480058435.XA 2013-10-25 2014-10-23 等离子体流枪以及等离子体回路组件 Active CN105723498B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361895787P 2013-10-25 2013-10-25
US61/895,787 2013-10-25
US14/137,196 2013-12-20
US14/137,196 US9070538B2 (en) 2013-10-25 2013-12-20 Pinched plasma bridge flood gun for substrate charge neutralization
PCT/US2014/061984 WO2015061578A1 (en) 2013-10-25 2014-10-23 Pinched plasma bridge flood gun for substrate charge neutralization

Publications (2)

Publication Number Publication Date
CN105723498A CN105723498A (zh) 2016-06-29
CN105723498B true CN105723498B (zh) 2018-10-26

Family

ID=52993563

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480058435.XA Active CN105723498B (zh) 2013-10-25 2014-10-23 等离子体流枪以及等离子体回路组件

Country Status (6)

Country Link
US (1) US9070538B2 (enExample)
JP (1) JP6379187B2 (enExample)
KR (1) KR102334205B1 (enExample)
CN (1) CN105723498B (enExample)
TW (1) TWI623016B (enExample)
WO (1) WO2015061578A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108369886B (zh) * 2015-12-27 2020-08-14 恩特格里斯公司 通过在溅射气体混合物中使用痕量原位清洁气体改善离子布植等离子体浸没枪(pfg)性能
US9824857B2 (en) * 2016-01-14 2017-11-21 Varian Semiconductor Equipment Associates, Inc. Method for implantation of semiconductor wafers having high bulk resistivity
DE102016005537A1 (de) * 2016-05-04 2017-11-09 Forschungszentrum Jülich GmbH Fachbereich Patente Verfahren zur Herstellung von Schichten von ReRAM-Speichern und Verwendung eines Implanters
WO2019118121A1 (en) * 2017-12-15 2019-06-20 Entegris, Inc. Methods and assemblies using flourine containing and inert gasses for plasma flood gun (pfg) operation

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US20090114815A1 (en) * 2007-11-06 2009-05-07 Vanderberg Bo H Plasma electron flood for ion beam implanter
US20120085917A1 (en) * 2010-10-08 2012-04-12 Varian Semiconductor Equipment Associates, Inc. Inductively coupled plasma flood gun using an immersed low inductance fr coil and multicusp magnetic arrangement

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JP3054302B2 (ja) * 1992-12-02 2000-06-19 アプライド マテリアルズ インコーポレイテッド イオン注入中の半導体ウェハにおける帯電を低減するプラズマ放出システム
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KR20040005402A (ko) 2002-07-10 2004-01-16 삼성전자주식회사 이온 주입 설비의 플라즈마 플라드 건
JP3742638B2 (ja) * 2003-09-19 2006-02-08 アプライド マテリアルズ インコーポレイテッド エレクトロンフラッド装置及びイオン注入装置
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US20120085917A1 (en) * 2010-10-08 2012-04-12 Varian Semiconductor Equipment Associates, Inc. Inductively coupled plasma flood gun using an immersed low inductance fr coil and multicusp magnetic arrangement

Also Published As

Publication number Publication date
KR20160078388A (ko) 2016-07-04
KR102334205B1 (ko) 2021-12-02
TW201523687A (zh) 2015-06-16
CN105723498A (zh) 2016-06-29
WO2015061578A1 (en) 2015-04-30
JP6379187B2 (ja) 2018-09-05
JP2016534495A (ja) 2016-11-04
US20150115796A1 (en) 2015-04-30
TWI623016B (zh) 2018-05-01
US9070538B2 (en) 2015-06-30

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