TWI623016B - 電漿流槍與電漿迴路組件 - Google Patents
電漿流槍與電漿迴路組件 Download PDFInfo
- Publication number
- TWI623016B TWI623016B TW103136730A TW103136730A TWI623016B TW I623016 B TWI623016 B TW I623016B TW 103136730 A TW103136730 A TW 103136730A TW 103136730 A TW103136730 A TW 103136730A TW I623016 B TWI623016 B TW I623016B
- Authority
- TW
- Taiwan
- Prior art keywords
- plasma
- block portion
- conductive block
- conductive
- constricted region
- Prior art date
Links
- 238000005468 ion implantation Methods 0.000 claims description 15
- 239000002245 particle Substances 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 238000012546 transfer Methods 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 2
- 239000002002 slurry Substances 0.000 claims 1
- 238000010884 ion-beam technique Methods 0.000 description 51
- 150000002500 ions Chemical class 0.000 description 47
- 239000000758 substrate Substances 0.000 description 28
- 239000007789 gas Substances 0.000 description 12
- 230000000712 assembly Effects 0.000 description 8
- 238000000429 assembly Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000011109 contamination Methods 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000007943 implant Substances 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 150000001793 charged compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- 229910015900 BF3 Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000005591 charge neutralization Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/004—Charge control of objects or beams
- H01J2237/0041—Neutralising arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/004—Charge control of objects or beams
- H01J2237/0041—Neutralising arrangements
- H01J2237/0044—Neutralising arrangements of objects being observed or treated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/327—Arrangements for generating the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/336—Changing physical properties of treated surfaces
- H01J2237/3365—Plasma source implantation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Sources, Ion Sources (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361895787P | 2013-10-25 | 2013-10-25 | |
| US61/895,787 | 2013-10-25 | ||
| US14/137,196 | 2013-12-20 | ||
| US14/137,196 US9070538B2 (en) | 2013-10-25 | 2013-12-20 | Pinched plasma bridge flood gun for substrate charge neutralization |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201523687A TW201523687A (zh) | 2015-06-16 |
| TWI623016B true TWI623016B (zh) | 2018-05-01 |
Family
ID=52993563
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103136730A TWI623016B (zh) | 2013-10-25 | 2014-10-24 | 電漿流槍與電漿迴路組件 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9070538B2 (enExample) |
| JP (1) | JP6379187B2 (enExample) |
| KR (1) | KR102334205B1 (enExample) |
| CN (1) | CN105723498B (enExample) |
| TW (1) | TWI623016B (enExample) |
| WO (1) | WO2015061578A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108369886B (zh) * | 2015-12-27 | 2020-08-14 | 恩特格里斯公司 | 通过在溅射气体混合物中使用痕量原位清洁气体改善离子布植等离子体浸没枪(pfg)性能 |
| US9824857B2 (en) * | 2016-01-14 | 2017-11-21 | Varian Semiconductor Equipment Associates, Inc. | Method for implantation of semiconductor wafers having high bulk resistivity |
| DE102016005537A1 (de) * | 2016-05-04 | 2017-11-09 | Forschungszentrum Jülich GmbH Fachbereich Patente | Verfahren zur Herstellung von Schichten von ReRAM-Speichern und Verwendung eines Implanters |
| WO2019118121A1 (en) * | 2017-12-15 | 2019-06-20 | Entegris, Inc. | Methods and assemblies using flourine containing and inert gasses for plasma flood gun (pfg) operation |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200930158A (en) * | 2007-12-25 | 2009-07-01 | Ind Tech Res Inst | Jet plasma gun and plasma device using the same |
| US7586100B2 (en) * | 2008-02-12 | 2009-09-08 | Varian Semiconductor Equipment Associates, Inc. | Closed loop control and process optimization in plasma doping processes using a time of flight ion detector |
| US20110061810A1 (en) * | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
| US20120085917A1 (en) * | 2010-10-08 | 2012-04-12 | Varian Semiconductor Equipment Associates, Inc. | Inductively coupled plasma flood gun using an immersed low inductance fr coil and multicusp magnetic arrangement |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4188591A (en) | 1977-10-07 | 1980-02-12 | The United States Of America As Represented By The Secretary Of The Air Force | RF excited mercury laser lamp |
| JP2704438B2 (ja) * | 1989-09-04 | 1998-01-26 | 東京エレクトロン株式会社 | イオン注入装置 |
| US5505780A (en) * | 1992-03-18 | 1996-04-09 | International Business Machines Corporation | High-density plasma-processing tool with toroidal magnetic field |
| JP3054302B2 (ja) * | 1992-12-02 | 2000-06-19 | アプライド マテリアルズ インコーポレイテッド | イオン注入中の半導体ウェハにおける帯電を低減するプラズマ放出システム |
| US6020592A (en) * | 1998-08-03 | 2000-02-01 | Varian Semiconductor Equipment Associates, Inc. | Dose monitor for plasma doping system |
| US6204508B1 (en) * | 1998-08-07 | 2001-03-20 | Axcelis Technologies, Inc. | Toroidal filament for plasma generation |
| US6265033B1 (en) * | 1998-09-11 | 2001-07-24 | Donald Bennett Hilliard | Method for optically coupled vapor deposition |
| US6645354B1 (en) * | 2000-04-07 | 2003-11-11 | Vladimir I. Gorokhovsky | Rectangular cathodic arc source and method of steering an arc spot |
| US7288491B2 (en) * | 2000-08-11 | 2007-10-30 | Applied Materials, Inc. | Plasma immersion ion implantation process |
| US7094670B2 (en) * | 2000-08-11 | 2006-08-22 | Applied Materials, Inc. | Plasma immersion ion implantation process |
| US6755150B2 (en) * | 2001-04-20 | 2004-06-29 | Applied Materials Inc. | Multi-core transformer plasma source |
| US20030129106A1 (en) * | 2001-08-29 | 2003-07-10 | Applied Materials, Inc. | Semiconductor processing using an efficiently coupled gas source |
| KR20040005402A (ko) | 2002-07-10 | 2004-01-16 | 삼성전자주식회사 | 이온 주입 설비의 플라즈마 플라드 건 |
| JP3742638B2 (ja) * | 2003-09-19 | 2006-02-08 | アプライド マテリアルズ インコーポレイテッド | エレクトロンフラッド装置及びイオン注入装置 |
| US7304310B1 (en) | 2003-11-21 | 2007-12-04 | Kla-Tencor Technologies Corp. | Methods and systems for inspecting a specimen using light scattered in different wavelength ranges |
| KR20050077169A (ko) | 2004-01-27 | 2005-08-01 | 삼성전자주식회사 | 반도체 이온주입설비의 플라즈마 플러드 건 |
| US7402816B2 (en) | 2004-11-19 | 2008-07-22 | Varian Semiconductor Equipment Associates, Inc. | Electron injection in ion implanter magnets |
| JP2008096278A (ja) | 2006-10-12 | 2008-04-24 | Fujifilm Corp | 放射線画像検出器 |
| US7800083B2 (en) * | 2007-11-06 | 2010-09-21 | Axcelis Technologies, Inc. | Plasma electron flood for ion beam implanter |
| US7927986B2 (en) * | 2008-07-22 | 2011-04-19 | Varian Semiconductor Equipment Associates, Inc. | Ion implantation with heavy halogenide compounds |
| US8603591B2 (en) * | 2009-04-03 | 2013-12-10 | Varian Semiconductor Ewuipment Associates, Inc. | Enhanced etch and deposition profile control using plasma sheath engineering |
| US8642128B2 (en) * | 2009-04-20 | 2014-02-04 | Applied Materials, Inc. | Enhanced scavenging of residual fluorine radicals using silicon coating on process chamber walls |
| US8749053B2 (en) * | 2009-06-23 | 2014-06-10 | Intevac, Inc. | Plasma grid implant system for use in solar cell fabrications |
| US8742665B2 (en) * | 2009-11-18 | 2014-06-03 | Applied Materials, Inc. | Plasma source design |
| US9155181B2 (en) * | 2010-08-06 | 2015-10-06 | Lam Research Corporation | Distributed multi-zone plasma source systems, methods and apparatus |
| US20130095643A1 (en) * | 2011-10-17 | 2013-04-18 | Applied Materials, Inc. | Methods for implanting dopant species in a substrate |
| JP5467371B2 (ja) * | 2011-12-07 | 2014-04-09 | パナソニック株式会社 | 誘導結合型プラズマ処理装置及び誘導結合型プラズマ処理方法 |
| US20130288469A1 (en) * | 2012-04-27 | 2013-10-31 | Applied Materials, Inc. | Methods and apparatus for implanting a dopant material |
| US9793098B2 (en) * | 2012-09-14 | 2017-10-17 | Vapor Technologies, Inc. | Low pressure arc plasma immersion coating vapor deposition and ion treatment |
| US20140127394A1 (en) * | 2012-11-07 | 2014-05-08 | Varian Semiconductor Equipment Associates, Inc. | Reducing Glitching In An Ion Implanter |
-
2013
- 2013-12-20 US US14/137,196 patent/US9070538B2/en active Active
-
2014
- 2014-10-23 KR KR1020167013402A patent/KR102334205B1/ko active Active
- 2014-10-23 CN CN201480058435.XA patent/CN105723498B/zh active Active
- 2014-10-23 JP JP2016522088A patent/JP6379187B2/ja active Active
- 2014-10-23 WO PCT/US2014/061984 patent/WO2015061578A1/en not_active Ceased
- 2014-10-24 TW TW103136730A patent/TWI623016B/zh active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200930158A (en) * | 2007-12-25 | 2009-07-01 | Ind Tech Res Inst | Jet plasma gun and plasma device using the same |
| US7586100B2 (en) * | 2008-02-12 | 2009-09-08 | Varian Semiconductor Equipment Associates, Inc. | Closed loop control and process optimization in plasma doping processes using a time of flight ion detector |
| US20110061810A1 (en) * | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
| US20120085917A1 (en) * | 2010-10-08 | 2012-04-12 | Varian Semiconductor Equipment Associates, Inc. | Inductively coupled plasma flood gun using an immersed low inductance fr coil and multicusp magnetic arrangement |
| TW201227795A (en) * | 2010-10-08 | 2012-07-01 | Varian Semiconductor Equipment | Inductively coupled plasma flood gun using an immersed low inductance RF coil and multicusp magnetic arrangement |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20160078388A (ko) | 2016-07-04 |
| KR102334205B1 (ko) | 2021-12-02 |
| TW201523687A (zh) | 2015-06-16 |
| CN105723498A (zh) | 2016-06-29 |
| WO2015061578A1 (en) | 2015-04-30 |
| JP6379187B2 (ja) | 2018-09-05 |
| JP2016534495A (ja) | 2016-11-04 |
| CN105723498B (zh) | 2018-10-26 |
| US20150115796A1 (en) | 2015-04-30 |
| US9070538B2 (en) | 2015-06-30 |
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