JP2016534495A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2016534495A5 JP2016534495A5 JP2016522088A JP2016522088A JP2016534495A5 JP 2016534495 A5 JP2016534495 A5 JP 2016534495A5 JP 2016522088 A JP2016522088 A JP 2016522088A JP 2016522088 A JP2016522088 A JP 2016522088A JP 2016534495 A5 JP2016534495 A5 JP 2016534495A5
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- conductive block
- block portion
- loop
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005468 ion implantation Methods 0.000 claims description 8
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims 3
- 239000002245 particle Substances 0.000 claims 2
- 239000000463 material Substances 0.000 claims 1
- 238000010884 ion-beam technique Methods 0.000 description 26
- 150000002500 ions Chemical class 0.000 description 21
- 239000000758 substrate Substances 0.000 description 13
- 230000000712 assembly Effects 0.000 description 7
- 238000000429 assembly Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361895787P | 2013-10-25 | 2013-10-25 | |
| US61/895,787 | 2013-10-25 | ||
| US14/137,196 | 2013-12-20 | ||
| US14/137,196 US9070538B2 (en) | 2013-10-25 | 2013-12-20 | Pinched plasma bridge flood gun for substrate charge neutralization |
| PCT/US2014/061984 WO2015061578A1 (en) | 2013-10-25 | 2014-10-23 | Pinched plasma bridge flood gun for substrate charge neutralization |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016534495A JP2016534495A (ja) | 2016-11-04 |
| JP2016534495A5 true JP2016534495A5 (enExample) | 2017-08-17 |
| JP6379187B2 JP6379187B2 (ja) | 2018-09-05 |
Family
ID=52993563
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016522088A Active JP6379187B2 (ja) | 2013-10-25 | 2014-10-23 | 基板電荷中和用ピンチ・プラズマブリッジ・フラッドガン |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9070538B2 (enExample) |
| JP (1) | JP6379187B2 (enExample) |
| KR (1) | KR102334205B1 (enExample) |
| CN (1) | CN105723498B (enExample) |
| TW (1) | TWI623016B (enExample) |
| WO (1) | WO2015061578A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108369886B (zh) * | 2015-12-27 | 2020-08-14 | 恩特格里斯公司 | 通过在溅射气体混合物中使用痕量原位清洁气体改善离子布植等离子体浸没枪(pfg)性能 |
| US9824857B2 (en) * | 2016-01-14 | 2017-11-21 | Varian Semiconductor Equipment Associates, Inc. | Method for implantation of semiconductor wafers having high bulk resistivity |
| DE102016005537A1 (de) * | 2016-05-04 | 2017-11-09 | Forschungszentrum Jülich GmbH Fachbereich Patente | Verfahren zur Herstellung von Schichten von ReRAM-Speichern und Verwendung eines Implanters |
| WO2019118121A1 (en) * | 2017-12-15 | 2019-06-20 | Entegris, Inc. | Methods and assemblies using flourine containing and inert gasses for plasma flood gun (pfg) operation |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4188591A (en) | 1977-10-07 | 1980-02-12 | The United States Of America As Represented By The Secretary Of The Air Force | RF excited mercury laser lamp |
| JP2704438B2 (ja) * | 1989-09-04 | 1998-01-26 | 東京エレクトロン株式会社 | イオン注入装置 |
| US5505780A (en) * | 1992-03-18 | 1996-04-09 | International Business Machines Corporation | High-density plasma-processing tool with toroidal magnetic field |
| JP3054302B2 (ja) * | 1992-12-02 | 2000-06-19 | アプライド マテリアルズ インコーポレイテッド | イオン注入中の半導体ウェハにおける帯電を低減するプラズマ放出システム |
| US6020592A (en) * | 1998-08-03 | 2000-02-01 | Varian Semiconductor Equipment Associates, Inc. | Dose monitor for plasma doping system |
| US6204508B1 (en) * | 1998-08-07 | 2001-03-20 | Axcelis Technologies, Inc. | Toroidal filament for plasma generation |
| US6265033B1 (en) * | 1998-09-11 | 2001-07-24 | Donald Bennett Hilliard | Method for optically coupled vapor deposition |
| US6645354B1 (en) * | 2000-04-07 | 2003-11-11 | Vladimir I. Gorokhovsky | Rectangular cathodic arc source and method of steering an arc spot |
| US7288491B2 (en) * | 2000-08-11 | 2007-10-30 | Applied Materials, Inc. | Plasma immersion ion implantation process |
| US7094670B2 (en) * | 2000-08-11 | 2006-08-22 | Applied Materials, Inc. | Plasma immersion ion implantation process |
| US6755150B2 (en) * | 2001-04-20 | 2004-06-29 | Applied Materials Inc. | Multi-core transformer plasma source |
| US20030129106A1 (en) * | 2001-08-29 | 2003-07-10 | Applied Materials, Inc. | Semiconductor processing using an efficiently coupled gas source |
| KR20040005402A (ko) | 2002-07-10 | 2004-01-16 | 삼성전자주식회사 | 이온 주입 설비의 플라즈마 플라드 건 |
| JP3742638B2 (ja) * | 2003-09-19 | 2006-02-08 | アプライド マテリアルズ インコーポレイテッド | エレクトロンフラッド装置及びイオン注入装置 |
| US7304310B1 (en) | 2003-11-21 | 2007-12-04 | Kla-Tencor Technologies Corp. | Methods and systems for inspecting a specimen using light scattered in different wavelength ranges |
| KR20050077169A (ko) | 2004-01-27 | 2005-08-01 | 삼성전자주식회사 | 반도체 이온주입설비의 플라즈마 플러드 건 |
| US7402816B2 (en) | 2004-11-19 | 2008-07-22 | Varian Semiconductor Equipment Associates, Inc. | Electron injection in ion implanter magnets |
| JP2008096278A (ja) | 2006-10-12 | 2008-04-24 | Fujifilm Corp | 放射線画像検出器 |
| US7800083B2 (en) * | 2007-11-06 | 2010-09-21 | Axcelis Technologies, Inc. | Plasma electron flood for ion beam implanter |
| TW200930158A (en) * | 2007-12-25 | 2009-07-01 | Ind Tech Res Inst | Jet plasma gun and plasma device using the same |
| US7586100B2 (en) * | 2008-02-12 | 2009-09-08 | Varian Semiconductor Equipment Associates, Inc. | Closed loop control and process optimization in plasma doping processes using a time of flight ion detector |
| US7927986B2 (en) * | 2008-07-22 | 2011-04-19 | Varian Semiconductor Equipment Associates, Inc. | Ion implantation with heavy halogenide compounds |
| US8603591B2 (en) * | 2009-04-03 | 2013-12-10 | Varian Semiconductor Ewuipment Associates, Inc. | Enhanced etch and deposition profile control using plasma sheath engineering |
| US8642128B2 (en) * | 2009-04-20 | 2014-02-04 | Applied Materials, Inc. | Enhanced scavenging of residual fluorine radicals using silicon coating on process chamber walls |
| US8749053B2 (en) * | 2009-06-23 | 2014-06-10 | Intevac, Inc. | Plasma grid implant system for use in solar cell fabrications |
| US20110061810A1 (en) * | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
| US8742665B2 (en) * | 2009-11-18 | 2014-06-03 | Applied Materials, Inc. | Plasma source design |
| US9155181B2 (en) * | 2010-08-06 | 2015-10-06 | Lam Research Corporation | Distributed multi-zone plasma source systems, methods and apparatus |
| US8471476B2 (en) | 2010-10-08 | 2013-06-25 | Varian Semiconductor Equipment Associates, Inc. | Inductively coupled plasma flood gun using an immersed low inductance FR coil and multicusp magnetic arrangement |
| US20130095643A1 (en) * | 2011-10-17 | 2013-04-18 | Applied Materials, Inc. | Methods for implanting dopant species in a substrate |
| JP5467371B2 (ja) * | 2011-12-07 | 2014-04-09 | パナソニック株式会社 | 誘導結合型プラズマ処理装置及び誘導結合型プラズマ処理方法 |
| US20130288469A1 (en) * | 2012-04-27 | 2013-10-31 | Applied Materials, Inc. | Methods and apparatus for implanting a dopant material |
| US9793098B2 (en) * | 2012-09-14 | 2017-10-17 | Vapor Technologies, Inc. | Low pressure arc plasma immersion coating vapor deposition and ion treatment |
| US20140127394A1 (en) * | 2012-11-07 | 2014-05-08 | Varian Semiconductor Equipment Associates, Inc. | Reducing Glitching In An Ion Implanter |
-
2013
- 2013-12-20 US US14/137,196 patent/US9070538B2/en active Active
-
2014
- 2014-10-23 KR KR1020167013402A patent/KR102334205B1/ko active Active
- 2014-10-23 CN CN201480058435.XA patent/CN105723498B/zh active Active
- 2014-10-23 JP JP2016522088A patent/JP6379187B2/ja active Active
- 2014-10-23 WO PCT/US2014/061984 patent/WO2015061578A1/en not_active Ceased
- 2014-10-24 TW TW103136730A patent/TWI623016B/zh active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI648761B (zh) | 用於製造帶狀離子束的改良的離子源組件 | |
| CN101849275B (zh) | 用于离子束注入机的等离子体电子流 | |
| US6635883B2 (en) | Gas cluster ion beam low mass ion filter | |
| CN105474349B (zh) | 离子注入系统中引出电极组件的电压调制 | |
| US10714296B2 (en) | Ion source with tailored extraction shape | |
| TWI446394B (zh) | 離子源及離子植入系統 | |
| CN104900470A (zh) | 采用具有磁约束的等离子体源的基于等离子体的材料改性 | |
| US8183542B2 (en) | Temperature controlled ion source | |
| JP2016534495A5 (enExample) | ||
| JP6379187B2 (ja) | 基板電荷中和用ピンチ・プラズマブリッジ・フラッドガン | |
| JP4533112B2 (ja) | ウエハ帯電抑制装置及びこれを備えたイオン注入装置 | |
| TWI839888B (zh) | 離子源及離子植入系統 | |
| TWI844929B (zh) | 離子源及萃取板 | |
| CN101903970A (zh) | 双等离子体离子源 | |
| KR20180066922A (ko) | 이온 소스 헤드 및 이를 포함하는 이온 주입 장치 | |
| TWI847243B (zh) | 離子源 | |
| US8686640B2 (en) | Magnetic field reduction apparatus and magnetic plasma flood system for ion beam processing | |
| US20160322198A1 (en) | Ion Source for Metal Implantation and Methods Thereof |