CN105706170B - 易失性存储器将刷新请求信号发送到存储器控制器 - Google Patents

易失性存储器将刷新请求信号发送到存储器控制器 Download PDF

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Publication number
CN105706170B
CN105706170B CN201480061085.2A CN201480061085A CN105706170B CN 105706170 B CN105706170 B CN 105706170B CN 201480061085 A CN201480061085 A CN 201480061085A CN 105706170 B CN105706170 B CN 105706170B
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memory
signal
memory devices
controller
equipment
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Chinese (zh)
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CN105706170A (zh
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D·V·斯里拉玛吉利
J·P·金
J·徐
X·董
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Qualcomm Inc
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Qualcomm Inc
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40618—Refresh operations over multiple banks or interleaving
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40603—Arbitration, priority and concurrent access to memory cells for read/write or refresh operations
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40626—Temperature related aspects of refresh operations
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/406—Refreshing of dynamic cells

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Read Only Memory (AREA)
CN201480061085.2A 2013-11-11 2014-10-30 易失性存储器将刷新请求信号发送到存储器控制器 Active CN105706170B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361902550P 2013-11-11 2013-11-11
US61/902,550 2013-11-11
US14/244,173 US9911485B2 (en) 2013-11-11 2014-04-03 Method and apparatus for refreshing a memory cell
US14/244,173 2014-04-03
PCT/US2014/063040 WO2015069530A2 (en) 2013-11-11 2014-10-30 Method and apparatus for refreshing a memory cell

Publications (2)

Publication Number Publication Date
CN105706170A CN105706170A (zh) 2016-06-22
CN105706170B true CN105706170B (zh) 2019-03-22

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CN201480061085.2A Active CN105706170B (zh) 2013-11-11 2014-10-30 易失性存储器将刷新请求信号发送到存储器控制器

Country Status (5)

Country Link
US (1) US9911485B2 (enExample)
EP (1) EP3069346B1 (enExample)
JP (1) JP2016541050A (enExample)
CN (1) CN105706170B (enExample)
WO (1) WO2015069530A2 (enExample)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3032814B1 (fr) * 2015-02-18 2018-02-02 Upmem Circuit dram muni d'un processeur integre
US10783950B2 (en) * 2015-09-02 2020-09-22 Nvidia Corporation Memory management systems and methods using a management communication bus
US9818458B1 (en) 2015-09-23 2017-11-14 Intel Corporation Techniques for entry to a lower power state for a memory device
US10490251B2 (en) 2017-01-30 2019-11-26 Micron Technology, Inc. Apparatuses and methods for distributing row hammer refresh events across a memory device
US10319437B2 (en) * 2017-09-20 2019-06-11 Sandisk Technologies Llc Apparatus and method for identifying memory cells for data refresh based on monitor cell in a resistive memory device
TWI646548B (zh) * 2017-11-16 2019-01-01 慧榮科技股份有限公司 用來於一記憶裝置中進行刷新管理之方法以及記憶裝置及其控制器
KR102408867B1 (ko) 2017-12-20 2022-06-14 삼성전자주식회사 반도체 메모리 장치, 메모리 시스템 및 반도체 메모리 장치의 동작 방법
US10503670B2 (en) * 2017-12-21 2019-12-10 Advanced Micro Devices, Inc. Dynamic per-bank and all-bank refresh
US11017833B2 (en) 2018-05-24 2021-05-25 Micron Technology, Inc. Apparatuses and methods for pure-time, self adopt sampling for row hammer refresh sampling
US11977770B2 (en) * 2018-06-04 2024-05-07 Lodestar Licensing Group Llc Methods for generating notifications for updated information from mode registers of a memory device to a host and memory devices and systems employing the same
US10685696B2 (en) 2018-10-31 2020-06-16 Micron Technology, Inc. Apparatuses and methods for access based refresh timing
WO2020117686A1 (en) 2018-12-03 2020-06-11 Micron Technology, Inc. Semiconductor device performing row hammer refresh operation
CN117198356A (zh) 2018-12-21 2023-12-08 美光科技公司 用于目标刷新操作的时序交错的设备和方法
US10957377B2 (en) 2018-12-26 2021-03-23 Micron Technology, Inc. Apparatuses and methods for distributed targeted refresh operations
US11615831B2 (en) * 2019-02-26 2023-03-28 Micron Technology, Inc. Apparatuses and methods for memory mat refresh sequencing
US11227649B2 (en) 2019-04-04 2022-01-18 Micron Technology, Inc. Apparatuses and methods for staggered timing of targeted refresh operations
US10824573B1 (en) * 2019-04-19 2020-11-03 Micron Technology, Inc. Refresh and access modes for memory
US11069393B2 (en) 2019-06-04 2021-07-20 Micron Technology, Inc. Apparatuses and methods for controlling steal rates
US10978132B2 (en) 2019-06-05 2021-04-13 Micron Technology, Inc. Apparatuses and methods for staggered timing of skipped refresh operations
US10991413B2 (en) 2019-07-03 2021-04-27 Micron Technology, Inc. Memory with programmable die refresh stagger
US10978136B2 (en) 2019-07-18 2021-04-13 Apple Inc. Dynamic refresh rate control
US11302374B2 (en) 2019-08-23 2022-04-12 Micron Technology, Inc. Apparatuses and methods for dynamic refresh allocation
US11302377B2 (en) 2019-10-16 2022-04-12 Micron Technology, Inc. Apparatuses and methods for dynamic targeted refresh steals
KR20210127339A (ko) * 2020-04-14 2021-10-22 에스케이하이닉스 주식회사 리프레시 주기가 다른 다수의 영역을 구비한 메모리 장치, 이를 제어하는 메모리 컨트롤러 및 이를 포함하는 메모리 시스템
US11309010B2 (en) 2020-08-14 2022-04-19 Micron Technology, Inc. Apparatuses, systems, and methods for memory directed access pause
US11380382B2 (en) 2020-08-19 2022-07-05 Micron Technology, Inc. Refresh logic circuit layout having aggressor detector circuit sampling circuit and row hammer refresh control circuit
US11348631B2 (en) 2020-08-19 2022-05-31 Micron Technology, Inc. Apparatuses, systems, and methods for identifying victim rows in a memory device which cannot be simultaneously refreshed
US11557331B2 (en) 2020-09-23 2023-01-17 Micron Technology, Inc. Apparatuses and methods for controlling refresh operations
US11222686B1 (en) 2020-11-12 2022-01-11 Micron Technology, Inc. Apparatuses and methods for controlling refresh timing
US11264079B1 (en) 2020-12-18 2022-03-01 Micron Technology, Inc. Apparatuses and methods for row hammer based cache lockdown
US11798609B2 (en) * 2021-08-06 2023-10-24 Winbond Electronics Corp. Semiconductor memory device including control unit controlling time interval of refresh operation on memory to shorten interval between memory refresh operations corresponding to read/write access requirement
US12125514B2 (en) 2022-04-28 2024-10-22 Micron Technology, Inc. Apparatuses and methods for access based refresh operations
US12112787B2 (en) 2022-04-28 2024-10-08 Micron Technology, Inc. Apparatuses and methods for access based targeted refresh operations
US20240249763A1 (en) * 2023-01-20 2024-07-25 Micron Technology, Inc. Refreshing a memory device using real-time clock information

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6735139B2 (en) * 2001-12-14 2004-05-11 Silicon Storage Technology, Inc. System and method for providing asynchronous SRAM functionality with a DRAM array
CN102456394A (zh) * 2010-10-20 2012-05-16 三星电子株式会社 执行dram刷新操作的存储电路、系统和模块及其操作方法
CN103377695A (zh) * 2012-04-24 2013-10-30 三星电子株式会社 存储系统、存储器件、存储控制器及操作其的方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4185323A (en) * 1978-07-20 1980-01-22 Honeywell Information Systems Inc. Dynamic memory system which includes apparatus for performing refresh operations in parallel with normal memory operations
US4366538A (en) 1980-10-31 1982-12-28 Honeywell Information Systems Inc. Memory controller with queue control apparatus
JPH04109490A (ja) * 1990-08-29 1992-04-10 Hitachi Ltd メモリ装置およびメモリユニット
US6392948B1 (en) * 1996-08-29 2002-05-21 Micron Technology, Inc. Semiconductor device with self refresh test mode
US5940851A (en) * 1996-11-27 1999-08-17 Monolithic Systems, Inc. Method and apparatus for DRAM refresh using master, slave and self-refresh modes
US6898140B2 (en) * 1998-10-01 2005-05-24 Monolithic System Technology, Inc. Method and apparatus for temperature adaptive refresh in 1T-SRAM compatible memory using the subthreshold characteristics of MOSFET transistors
JP2000251467A (ja) * 1999-03-02 2000-09-14 Nec Ibaraki Ltd メモリリフレッシュ制御装置およびその制御方法
JP4106811B2 (ja) * 1999-06-10 2008-06-25 富士通株式会社 半導体記憶装置及び電子装置
US6430098B1 (en) * 2000-05-16 2002-08-06 Broadcom Corporation Transparent continuous refresh RAM cell architecture
JP3705113B2 (ja) * 2000-10-27 2005-10-12 セイコーエプソン株式会社 半導体メモリ装置内のワード線の活性化
JP3531602B2 (ja) * 2000-11-08 2004-05-31 セイコーエプソン株式会社 半導体メモリ装置内のワード線の活性化
JP2003006041A (ja) * 2001-06-20 2003-01-10 Hitachi Ltd 半導体装置
US7020741B1 (en) * 2003-04-29 2006-03-28 Advanced Micro Devices, Inc. Apparatus and method for isochronous arbitration to schedule memory refresh requests
US7353329B2 (en) * 2003-09-29 2008-04-01 Intel Corporation Memory buffer device integrating refresh logic
KR100752639B1 (ko) * 2004-08-31 2007-08-29 삼성전자주식회사 외부 리프레쉬 핀과 외부 리프레쉬 뱅크 어드레스 핀을갖는 메모리 장치 및 그 리프레쉬 방법
TWI266189B (en) * 2005-06-21 2006-11-11 Via Tech Inc Methods for removing data from a dynamic random access memory (DRAM), and computer system and storage medium utilizing the same
US7734866B2 (en) * 2005-08-04 2010-06-08 Rambus Inc. Memory with address-differentiated refresh rate to accommodate low-retention storage rows
JP2009536423A (ja) * 2006-05-05 2009-10-08 ハネウェル・インターナショナル・インコーポレーテッド 不揮発性メモリをリフレッシュする方法
US7447096B2 (en) * 2006-05-05 2008-11-04 Honeywell International Inc. Method for refreshing a non-volatile memory
US7505349B2 (en) * 2006-09-07 2009-03-17 Honeywell International Inc. Refresh sequence control for multiple memory elements
US7466617B2 (en) * 2007-01-16 2008-12-16 International Business Machines Corporation Multi-port dynamic memory structures
KR100856060B1 (ko) 2007-04-06 2008-09-02 주식회사 하이닉스반도체 반도체메모리소자의 내부리프레쉬신호 생성장치
US7975170B2 (en) 2007-06-15 2011-07-05 Qimonda Ag Memory refresh system and method
WO2009011052A1 (ja) 2007-07-18 2009-01-22 Fujitsu Limited メモリリフレッシュ装置およびメモリリフレッシュ方法
US7929368B2 (en) * 2008-12-30 2011-04-19 Micron Technology, Inc. Variable memory refresh devices and methods
JP2010176783A (ja) 2009-02-02 2010-08-12 Elpida Memory Inc 半導体装置とその制御方法と半導体装置とそれを制御するコントローラとを含む半導体システム
KR101974108B1 (ko) 2012-07-30 2019-08-23 삼성전자주식회사 리프레쉬 어드레스 생성기, 이를 포함하는 휘발성 메모리 장치 및 휘발성 메모리 장치의 리프레쉬 방법
US9053811B2 (en) * 2012-09-11 2015-06-09 International Business Machines Corporation Memory device refresh
KR102023487B1 (ko) * 2012-09-17 2019-09-20 삼성전자주식회사 오토 리프레쉬 커맨드를 사용하지 않고 리프레쉬를 수행할 수 있는 반도체 메모리 장치 및 이를 포함하는 메모리 시스템

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6735139B2 (en) * 2001-12-14 2004-05-11 Silicon Storage Technology, Inc. System and method for providing asynchronous SRAM functionality with a DRAM array
CN102456394A (zh) * 2010-10-20 2012-05-16 三星电子株式会社 执行dram刷新操作的存储电路、系统和模块及其操作方法
CN103377695A (zh) * 2012-04-24 2013-10-30 三星电子株式会社 存储系统、存储器件、存储控制器及操作其的方法

Also Published As

Publication number Publication date
CN105706170A (zh) 2016-06-22
US20150134897A1 (en) 2015-05-14
WO2015069530A2 (en) 2015-05-14
EP3069346B1 (en) 2020-04-15
JP2016541050A (ja) 2016-12-28
WO2015069530A3 (en) 2015-08-06
US9911485B2 (en) 2018-03-06
EP3069346A2 (en) 2016-09-21

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